JPH0667643B2 - Ion flow recording head manufacturing method - Google Patents

Ion flow recording head manufacturing method

Info

Publication number
JPH0667643B2
JPH0667643B2 JP60065171A JP6517185A JPH0667643B2 JP H0667643 B2 JPH0667643 B2 JP H0667643B2 JP 60065171 A JP60065171 A JP 60065171A JP 6517185 A JP6517185 A JP 6517185A JP H0667643 B2 JPH0667643 B2 JP H0667643B2
Authority
JP
Japan
Prior art keywords
forming
electrode
insulating material
electrodes
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP60065171A
Other languages
Japanese (ja)
Other versions
JPS61224490A (en
Inventor
信 面谷
知明 田中
隆一 豊田
耕一 河田
武 水谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP60065171A priority Critical patent/JPH0667643B2/en
Publication of JPS61224490A publication Critical patent/JPS61224490A/en
Publication of JPH0667643B2 publication Critical patent/JPH0667643B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、ファクシミリ,プリンター等の書き込み用ヘ
ッドとして用いるイオンフロー記録用ヘッドに関するも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion flow recording head used as a writing head for facsimiles, printers and the like.

従来の技術 イオンフロー記録用ヘッド1は第2図に示すように絶縁
板2の一面に共通電極3を形成し、絶縁板2の他面に微
細電極4を形成し、これら共通電極3、絶縁板2及び微
細電極4にφ0.1〜φ0.3mm程度の貫通孔5を形成してい
る。而してイオン源6でイオンを発生させ、イオンフロ
ー記録用ヘッド1の共通電極3と微細電極4にかかる電
圧により、貫通孔5をブロック状態にしてイオンの流れ
を制御し、ドラム7上の誘導体層8に潜像を形成するこ
とができる。
2. Description of the Related Art In an ion flow recording head 1, as shown in FIG. 2, a common electrode 3 is formed on one surface of an insulating plate 2, and a fine electrode 4 is formed on the other surface of the insulating plate 2. Through holes 5 of about φ0.1 to φ0.3 mm are formed in the plate 2 and the fine electrodes 4. Thus, ions are generated by the ion source 6, and the voltage is applied to the common electrode 3 and the fine electrode 4 of the ion flow recording head 1 to block the through holes 5 to control the flow of ions, and the ions on the drum 7 are controlled. A latent image can be formed on the derivative layer 8.

従来、上記イオンフロー記録用ヘッド1を製造するには
第4図(A)に示すように絶縁板2の一面に微細電極4
を形成する。この微細電極4は第3図に示すようにリン
グ状部9を有し、このリング状部9はその中心に80μm
程度の小孔10を有している。絶縁板2の他面に共通電極
3を形成する。然る後、ドリル11を微細電極4の中心の
小孔10の軸心に合わせ、このドリル11を前進させること
により第4図(B)に示すように貫通孔5を形成してい
た。
Conventionally, in order to manufacture the ion flow recording head 1, as shown in FIG. 4 (A), a fine electrode 4 is formed on one surface of an insulating plate 2.
To form. The fine electrode 4 has a ring-shaped portion 9 as shown in FIG. 3, and the ring-shaped portion 9 has a center of 80 μm.
It has about 10 small holes. The common electrode 3 is formed on the other surface of the insulating plate 2. After that, the drill 11 was aligned with the axis of the small hole 10 at the center of the fine electrode 4, and the drill 11 was advanced to form the through hole 5 as shown in FIG. 4 (B).

発明が解決しようとする問題点 しかしながらドリル11による孔明け作業の際に微細電極
4のリング状部9にバリ12が生じると共に共通電極3に
大きなバリ13が生じ、これらのバリ12,13により短絡,
スパーク,特性不良を生じる。また多数の貫通孔5を1
個宛加工するため、加工時間が長くかかり、しかもドリ
ル11の摩耗,刃こぼれ等により孔形状にもバラツキが多
い等の問題があった。
Problems to be Solved by the Invention However, during drilling work by the drill 11, burrs 12 are formed on the ring-shaped portion 9 of the fine electrode 4 and large burrs 13 are formed on the common electrode 3, and these burrs 12, 13 cause a short circuit. ,
Sparks and defective characteristics occur. In addition, a large number of through holes 5
There is a problem in that it takes a long processing time to process individual pieces, and there are many variations in hole shape due to wear of the drill 11 and blade spillage.

そこで、本発明は、短絡,スパーク,特性不良を防止す
ることができ、また加工時間を短縮することができ、し
かも孔形状のバラツキを少くすることができ、また微細
電極と共通電極の相対位置の精度を向上させることがで
きるようにしたイオンフロー記録用ヘッドの製造方法を
提供することを目的とするものである。
Therefore, the present invention can prevent short circuits, sparks, and defective characteristics, can shorten the processing time, and can reduce variations in the hole shape, and the relative positions of the fine electrode and the common electrode. It is an object of the present invention to provide a method for manufacturing an ion flow recording head capable of improving the accuracy of the above.

問題点を解決するための手段 そして上記問題点を解決する本発明は、エッチング加工
が可能な絶縁材を用意する工程と、前記絶縁材の両面に
隣接して第1及び第2の導体層を形成する工程と、前記
第1及び第2の導体層の前記絶縁材と反対側の各々の面
に隣接して、第1及び第2のフォトレジスト層を形成す
る工程と、前記第1及び第2のフォトレジスト層の前記
第1及び第2の導体層と反対側の各々の面に隣接して、
第1及び第2のマスクパターンを設置する工程と、前記
第1及び第2のマスクパターンを利用して、前記第1及
び第2のフォトレジスト層をともに露光する工程と、前
記露光された第1及び第2のフォトレジスト層をマスク
として、前記第1及び第2の導電体層をエッチングし、
各々内孔を有する形状の第1及び第2の電極を形成する
工程と、前記第1及び第2の電極から前記第1及び第2
のフォトレジスト層を剥離する工程と、前記内孔を有す
る形状の第1及び第2の電極の一方に隣接して保護層を
形成する工程と、前記内孔を有する形状の第1及び第2
の電極の他方をマスクとして、エッチングにより前記絶
縁材に内孔を形成する工程と、前記絶縁材に内孔が形成
された後、前記一方の電極から保護層を剥離する工程と
を有するイオンフロー記録用ヘッドの製造方法である。
Means for Solving the Problems And the present invention for solving the above problems includes a step of preparing an insulating material that can be etched and a first and a second conductor layer adjacent to both surfaces of the insulating material. A step of forming, a step of forming first and second photoresist layers adjacent to respective surfaces of the first and second conductor layers opposite to the insulating material, and steps of forming the first and second photoresist layers. Adjacent to each surface of the second photoresist layer opposite the first and second conductor layers,
Providing first and second mask patterns, exposing the first and second photoresist layers together using the first and second mask patterns, and exposing the exposed first and second photoresist layers. Etching the first and second conductor layers using the first and second photoresist layers as masks,
Forming first and second electrodes each having an inner hole, and from the first and second electrodes to the first and second electrodes
Of the photoresist layer, a step of forming a protective layer adjacent to one of the first and second electrodes having the inner hole, and the first and second electrodes having the inner hole.
Ion flow having a step of forming an inner hole in the insulating material by etching using the other of the electrodes as a mask, and a step of peeling the protective layer from the one electrode after the inner hole is formed in the insulating material. A method of manufacturing a recording head.

作用 本発明においては、第1のマスクパターンと第2のマス
クパターンを用いて同時に露光した第1のフォトレジス
ト層と第2のフォトレジスト層を利用して、第1の導体
層と第2の導体層をエッチングし、第1と電極と第2の
電極を形成し、第2の電極をマスクとして絶縁材をエッ
チングする。
Function In the present invention, the first conductor layer and the second conductor layer are formed by utilizing the first photoresist layer and the second photoresist layer which are simultaneously exposed by using the first mask pattern and the second mask pattern. The conductor layer is etched to form the first electrode and the second electrode, and the insulating material is etched using the second electrode as a mask.

実施例 以下、本発明の実施例を図面に基いて詳細に説明する。
第1図(A)に示すようにエッチング可能な絶縁材21の
両面の全面に導体層22を形成し、各導体層22の外面にフ
ォトレジスト23を塗布する。一方、第1図(B)に示す
ようにリング状部を有する微細電極を形成するための微
細電極用パターンマスク24と、共通電極を形成するため
の共通電極用パターンマスク25を準備し、これら微細電
極用パターンマスク24と共通電極用パターンマスク25を
高精度に位置合わせする。次に第1図(C)に示すよう
にこれら微細電極用と共通電極用のパターンマスク24,2
5の間に上記絶縁材21、導体層22及びフォトレジスト23
を介挿させる。次に微細電極用と共通電極用のパターン
24,25の外側より紫外線26により両面同時露光を行う。
次に、導体層22のエッチングを行うことにより第1図
(D)に示すように上下の導体層にそれぞれリング状部
27を有する微細電極28と、共通電極29を形成すると共に
これら微細電極28と共通電極29の外面のフォトレジスト
23を剥離する。次に第1図(E)に示すように微細電極
28の外面に保護コート30を形成し、共通電極29をエッチ
ングマスクとして共通電極29側からエッチング液31で絶
縁層21をエッチングする。エッチング後、保護コート30
を取除くことにより第1図(F)に示すように貫通孔32
を形成することができる。
Examples Hereinafter, examples of the present invention will be described in detail with reference to the drawings.
As shown in FIG. 1 (A), a conductor layer 22 is formed on the entire surface of both sides of an insulating material 21 that can be etched, and a photoresist 23 is applied to the outer surface of each conductor layer 22. On the other hand, as shown in FIG. 1B, a fine electrode pattern mask 24 for forming a fine electrode having a ring-shaped portion and a common electrode pattern mask 25 for forming a common electrode are prepared. The fine electrode pattern mask 24 and the common electrode pattern mask 25 are aligned with high accuracy. Next, as shown in FIG. 1 (C), pattern masks 24 and 2 for these fine electrodes and common electrodes are used.
Insulating material 21, conductor layer 22 and photoresist 23 between
Insert. Next, patterns for fine electrodes and common electrodes
Simultaneous double-sided exposure with ultraviolet rays 26 from the outside of 24 and 25.
Next, the conductor layer 22 is etched to form ring-shaped portions on the upper and lower conductor layers, respectively, as shown in FIG. 1 (D).
A fine electrode 28 having 27 and a common electrode 29 are formed, and a photoresist on the outer surface of the fine electrode 28 and the common electrode 29 is formed.
23 is peeled off. Next, as shown in FIG.
A protective coat 30 is formed on the outer surface of 28, and the insulating layer 21 is etched from the common electrode 29 side with an etchant 31 using the common electrode 29 as an etching mask. After etching, protective coat 30
By removing the through hole 32 as shown in FIG.
Can be formed.

従って、より簡便で効率的なエッチング加工によりバリ
のない多数の貫通孔12を同時加工することができる。ま
た予め両側に位置する微細電極用と共通電極用のパター
ンマスク24,25を位置合わせしておき、両外側より同時
露光するので、材料の収縮等の影響を受けず、微細電極
28と共通電極29の相対位置精度を向上させることができ
る。
Therefore, a large number of through holes 12 without burrs can be simultaneously processed by a simpler and more efficient etching process. In addition, since the pattern masks 24 and 25 for the fine electrodes and the common electrode located on both sides are aligned in advance and the simultaneous exposure is performed from both outer sides, the fine electrodes are not affected by the contraction of the material.
The relative positional accuracy between the common electrode 28 and the common electrode 29 can be improved.

なお上記実施例では貫通孔1ケの場合について説明した
が、貫通孔は複数個設けても良く、またこの複数個の貫
通孔に共通した電極を設けても良いことはもちろんであ
る。
In the above embodiment, the case where there is one through hole has been described, but it goes without saying that a plurality of through holes may be provided and an electrode common to the plurality of through holes may be provided.

発明の効果 以上、要するに本発明は導体層及び絶縁材をエッチング
で加工することによりバリがなく、バラツキの少ない貫
通孔を形成することができ、スパーク,短絡,特性不良
を防止することができる。特に、第2の電極をそのまま
絶縁材のエッチングのマスクとして用いるため、新たな
マスクを追加し構成度に位置決めをする必要はなく、よ
り簡便で効率的、かつ高精度のエッチング工程を実現
し、記録ヘッドの特性不良等の防止に効果的に貢献して
いる。またエッチングで多数の貫通孔を同時に加工する
ことができるので、作業時間を短縮することができる。
また予め両側に位置する微細電極用と共通電極用のパタ
ーンマスクを位置合わせし、両外側より同時露光するの
で、材料の収縮等の影響を受けず、微細電極と共通電極
の相対位置精度を向上させることができる。
Effects of the Invention As described above, according to the present invention, the conductor layer and the insulating material are processed by etching, so that a through hole having no burr and less variation can be formed, and a spark, a short circuit and a characteristic defect can be prevented. In particular, since the second electrode is used as it is as a mask for etching the insulating material, there is no need to add a new mask to position the structure, and a simpler, more efficient, and more accurate etching process can be realized. It effectively contributes to the prevention of defective characteristics of the recording head. Further, since a large number of through holes can be simultaneously processed by etching, the working time can be shortened.
In addition, the pattern masks for the fine electrodes and the common electrode located on both sides are aligned in advance, and simultaneous exposure is performed from both outsides, so the relative positional accuracy of the fine electrodes and the common electrode is improved without being affected by material shrinkage. Can be made.

【図面の簡単な説明】[Brief description of drawings]

第1図(A)乃至(F)は本発明のイオンフロー記録用
ヘッドの製造方法の一実施例を示す断面図、第2図はイ
オンフロー記録の原理説明図、第3図は従来のイオンフ
ロー記録用ヘッドに用いる微細電極の平面図、第4図
(A)及び(B)は従来のイオンフロー記録用ヘッドの
製造方法を示す断面図である。 21……絶縁材、22……導体層、23……フォトレジスト、
24……微細電極形成用パターンマスク、25……共通電極
形成用パターンマスク、26……紫外線、28……微細電
極、29……共通電極、30……保護コート、31……エッチ
ング液、32……貫通孔。
1 (A) to 1 (F) are cross-sectional views showing an embodiment of a method of manufacturing an ion flow recording head of the present invention, FIG. 2 is an explanatory view of the principle of ion flow recording, and FIG. 3 is a conventional ion. FIGS. 4 (A) and 4 (B) are cross-sectional views showing a conventional method for manufacturing an ion flow recording head, which are plan views of fine electrodes used in the flow recording head. 21 ... Insulation material, 22 ... Conductor layer, 23 ... Photoresist,
24 …… Pattern mask for forming fine electrodes, 25 …… Pattern mask for forming common electrodes, 26 …… UV rays, 28 …… Fine electrodes, 29 …… Common electrodes, 30 …… Protective coat, 31 …… Etching liquid, 32 …… Through hole.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 豊田 隆一 神奈川県川崎市多摩区東三田3丁目10番1 号 松下技研株式会社内 (72)発明者 河田 耕一 神奈川県川崎市多摩区東三田3丁目10番1 号 松下技研株式会社内 (72)発明者 水谷 武 神奈川県川崎市多摩区東三田3丁目10番1 号 松下技研株式会社内 (56)参考文献 特開 昭56−142551(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Ryuichi Toyota 3-10-1 Higashisanda, Tama-ku, Kawasaki City, Kanagawa Prefecture Matsushita Giken Co., Ltd. No. 10-1 Matsushita Giken Co., Ltd. (72) Inventor Takeshi Mizutani 3-10-10 Higashisanda, Tama-ku, Kawasaki-shi, Kanagawa Matsushita Giken Co., Ltd. (56) Reference JP-A-56-142551 (JP, A) )

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】エッチング加工が可能な絶縁材を用意する
工程と、 前記絶縁材の両面に隣接して第1及び第2の導体層を形
成する工程と、 前記第1及び第2の導体層の前記絶縁材と反対側の各々
の面に隣接して、第1及び第2のフォトレジスト層を形
成する工程と、 前記第1及び第2のフォトレジスト層の前記第1及び第
2の導体層と反対側の各々の面に隣接して、第1及び第
2のマスクパターンを設置する工程と、 前記第1及び第2のマスクパターンを利用して、前記第
1及び第2のフォトレジスト層をともに露光する工程
と、 前記露光された第1及び第2のフォトレジスト層をマス
クとして、前記第1及び第2の導電体層をエッチング
し、各々内孔を有する形状の第1及び第2の電極を形成
する工程と、 前記第1及び第2の電極から前記第1及び第2のフォト
レジスト層を剥離する工程と、 前記内孔を有する形状の第1及び第2の電極の一方に隣
接して保護層を形成する工程と、 前記内孔を有する形状の第1及び第2の電極の他方をマ
スクとして、エッチングにより前記絶縁材に内孔を形成
する工程と、 前記絶縁材に内孔が形成された後、前記一方の電極から
保護層を剥離する工程とを有するイオンフロー記録用ヘ
ッドの製造方法。
1. A step of preparing an insulating material that can be etched, a step of forming first and second conductor layers adjacent to both surfaces of the insulating material, and the first and second conductor layers. Forming first and second photoresist layers adjacent to respective surfaces of the first and second photoresist layers opposite to the insulating material, and forming the first and second conductors of the first and second photoresist layers. Providing first and second mask patterns adjacent to respective surfaces opposite to the layer, and using the first and second mask patterns, the first and second photoresists Exposing the layers together, and etching the first and second conductor layers using the exposed first and second photoresist layers as a mask to form first and second conductive layers each having an inner hole. A step of forming a second electrode; and A step of removing the first and second photoresist layers; a step of forming a protective layer adjacent to one of the first and second electrodes having a shape having the inner hole; and a step having a shape having the inner hole. A step of forming an inner hole in the insulating material by etching using the other of the first and second electrodes as a mask; and a step of peeling the protective layer from the one electrode after the inner hole is formed in the insulating material A method for manufacturing an ion flow recording head having:
JP60065171A 1985-03-29 1985-03-29 Ion flow recording head manufacturing method Expired - Fee Related JPH0667643B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60065171A JPH0667643B2 (en) 1985-03-29 1985-03-29 Ion flow recording head manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60065171A JPH0667643B2 (en) 1985-03-29 1985-03-29 Ion flow recording head manufacturing method

Publications (2)

Publication Number Publication Date
JPS61224490A JPS61224490A (en) 1986-10-06
JPH0667643B2 true JPH0667643B2 (en) 1994-08-31

Family

ID=13279176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60065171A Expired - Fee Related JPH0667643B2 (en) 1985-03-29 1985-03-29 Ion flow recording head manufacturing method

Country Status (1)

Country Link
JP (1) JPH0667643B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02102071A (en) * 1988-10-11 1990-04-13 Olympus Optical Co Ltd Manufacture of ion flow recording head

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142551A (en) * 1980-04-09 1981-11-06 Konishiroku Photo Ind Co Ltd Production of ion modulating electrode

Also Published As

Publication number Publication date
JPS61224490A (en) 1986-10-06

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