JPH066507Y2 - 減圧酸化ｃｖｄ装置 - Google Patents

減圧酸化ｃｖｄ装置

Info

Publication number
JPH066507Y2
JPH066507Y2 JP1986112717U JP11271786U JPH066507Y2 JP H066507 Y2 JPH066507 Y2 JP H066507Y2 JP 1986112717 U JP1986112717 U JP 1986112717U JP 11271786 U JP11271786 U JP 11271786U JP H066507 Y2 JPH066507 Y2 JP H066507Y2
Authority
JP
Japan
Prior art keywords
reaction chamber
film
flow rate
adjusting means
rate adjusting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1986112717U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6320429U (sv
Inventor
貴俊 牛越
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP1986112717U priority Critical patent/JPH066507Y2/ja
Publication of JPS6320429U publication Critical patent/JPS6320429U/ja
Application granted granted Critical
Publication of JPH066507Y2 publication Critical patent/JPH066507Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP1986112717U 1986-07-24 1986-07-24 減圧酸化ｃｖｄ装置 Expired - Lifetime JPH066507Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986112717U JPH066507Y2 (ja) 1986-07-24 1986-07-24 減圧酸化ｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986112717U JPH066507Y2 (ja) 1986-07-24 1986-07-24 減圧酸化ｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS6320429U JPS6320429U (sv) 1988-02-10
JPH066507Y2 true JPH066507Y2 (ja) 1994-02-16

Family

ID=30993849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986112717U Expired - Lifetime JPH066507Y2 (ja) 1986-07-24 1986-07-24 減圧酸化ｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPH066507Y2 (sv)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154235A (ja) * 1982-03-09 1983-09-13 Matsushita Electric Ind Co Ltd 減圧ｃｖｄ装置
JPS60167318A (ja) * 1984-02-09 1985-08-30 Mitsubishi Electric Corp 光応用半導体製造装置

Also Published As

Publication number Publication date
JPS6320429U (sv) 1988-02-10

Similar Documents

Publication Publication Date Title
US6013134A (en) Advance integrated chemical vapor deposition (AICVD) for semiconductor devices
KR101014062B1 (ko) 성막 방법 및 성막 장치
EP0316835A1 (en) Method of and device for cleaning substrates
US4855258A (en) Native oxide reduction for sealing nitride deposition
US20050145172A1 (en) Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
US20060216941A1 (en) Method for removing silicon oxide film and processing apparatus
JPH0684888A (ja) 絶縁膜の形成方法
US20060029735A1 (en) Oxidation process apparatus and oxidation process
US5294292A (en) Plasma ashing method
US6287984B1 (en) Apparatus and method for manufacturing semiconductor device
JPH066507Y2 (ja) 減圧酸化ｃｖｄ装置
JP2010087167A (ja) 半導体装置の製造方法
US20060003542A1 (en) Method of oxidizing object to be processed and oxidation system
JPH05251428A (ja) 絶縁膜形成方法およびこの絶縁膜を用いた不揮発性半導体装置
JP2827515B2 (ja) 熱処理装置および熱処理方法
JPH09246354A (ja) 可搬式密閉コンテナのガスパージステーション
KR100538270B1 (ko) 반도체장치 제조용 확산공정설비
JP2795691B2 (ja) 半導体装置の製造方法
JPH0539629Y2 (sv)
JPH01198034A (ja) 半導体装置の製造方法
JP3058655B2 (ja) ウェーハ拡散処理方法及びウェーハ熱処理方法
JPH04188721A (ja) 縦型熱処理装置
JPH07283210A (ja) 絶縁膜形成装置及び絶縁膜形成方法
JPH05304146A (ja) 絶縁膜形成方法
JPH04199672A (ja) 電荷蓄積装置