JPH066507Y2 - 減圧酸化ｃｖｄ装置 - Google Patents
減圧酸化ｃｖｄ装置Info
- Publication number
- JPH066507Y2 JPH066507Y2 JP1986112717U JP11271786U JPH066507Y2 JP H066507 Y2 JPH066507 Y2 JP H066507Y2 JP 1986112717 U JP1986112717 U JP 1986112717U JP 11271786 U JP11271786 U JP 11271786U JP H066507 Y2 JPH066507 Y2 JP H066507Y2
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- film
- flow rate
- adjusting means
- rate adjusting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003647 oxidation Effects 0.000 title claims description 22
- 238000007254 oxidation reaction Methods 0.000 title claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims 6
- 239000012495 reaction gas Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 230000006837 decompression Effects 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- -1 low temperature Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986112717U JPH066507Y2 (ja) | 1986-07-24 | 1986-07-24 | 減圧酸化ｃｖｄ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986112717U JPH066507Y2 (ja) | 1986-07-24 | 1986-07-24 | 減圧酸化ｃｖｄ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6320429U JPS6320429U (enrdf_load_stackoverflow) | 1988-02-10 |
| JPH066507Y2 true JPH066507Y2 (ja) | 1994-02-16 |
Family
ID=30993849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986112717U Expired - Lifetime JPH066507Y2 (ja) | 1986-07-24 | 1986-07-24 | 減圧酸化ｃｖｄ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH066507Y2 (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58154235A (ja) * | 1982-03-09 | 1983-09-13 | Matsushita Electric Ind Co Ltd | 減圧ｃｖｄ装置 |
| JPS60167318A (ja) * | 1984-02-09 | 1985-08-30 | Mitsubishi Electric Corp | 光応用半導体製造装置 |
-
1986
- 1986-07-24 JP JP1986112717U patent/JPH066507Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6320429U (enrdf_load_stackoverflow) | 1988-02-10 |
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