JPH0658619U - Electronic parts - Google Patents

Electronic parts

Info

Publication number
JPH0658619U
JPH0658619U JP458993U JP458993U JPH0658619U JP H0658619 U JPH0658619 U JP H0658619U JP 458993 U JP458993 U JP 458993U JP 458993 U JP458993 U JP 458993U JP H0658619 U JPH0658619 U JP H0658619U
Authority
JP
Japan
Prior art keywords
lid
package member
electronic component
joint surface
conductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP458993U
Other languages
Japanese (ja)
Inventor
岳明 島内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP458993U priority Critical patent/JPH0658619U/en
Publication of JPH0658619U publication Critical patent/JPH0658619U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】 【構成】 パッケージ部材19と蓋15を陽極接合して
気密封止を行う電子部品において、蓋はパッケージ部材
との接合面とこの接合面の対向面とに導体膜17を設
け、接合面の導体膜と対向面の導体膜とは電気的に導通
させる。 【効果】 蓋とパッケージ部材の接合が、蓋の材質に左
右されず、かつ陽極接合の電圧印加のための電極端子を
蓋から容易に取り出すことができる。
(57) [Summary] In an electronic component for hermetically sealing the package member 19 and the lid 15 by anodic bonding, the lid has the conductor film 17 on the joint surface with the package member and on the opposite surface to the joint surface. The conductive film on the bonding surface and the conductive film on the opposite surface are electrically connected to each other. [Effect] The joining of the lid and the package member does not depend on the material of the lid, and the electrode terminal for voltage application for anodic joining can be easily taken out from the lid.

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】[Industrial applications]

本考案は、センサーや水晶振動子や発振器などの電子部品におけるパッケージ 部材と蓋との気密封止に陽極接合を適用する電子部品の蓋の構造に関する。 The present invention relates to a structure of a lid of an electronic component that applies anodic bonding to hermetically seal a package member and a lid in an electronic component such as a sensor, a crystal unit, or an oscillator.

【0002】[0002]

【従来の技術】[Prior art]

陽極接合技術は、ガラスと金属の接合において、電気的なエネルギーを利用し て接合を行う方法であり、そのガラスと金属両者の結合力は、元の物質よりも強 いと云われている。 The anodic bonding technique is a method for bonding glass and metal using electrical energy, and it is said that the bonding force between the glass and metal is stronger than the original material.

【0003】 陽極接合によるガラスと金属との接合は極めて簡単で、図2に示すように、ガ ラス23と金属25を重ね合わせ、ガラス23の軟化点よりも低く、しかも金属 25の融点よりも低い温度雰囲気で、比較的高い直流電圧を直流電源21によっ て、短時間金属25側をプラスの電位にして、ガラス23と金属25との間に電 圧を印加すれば良い。The joining of glass and metal by anodic bonding is extremely simple. As shown in FIG. 2, the glass 23 and the metal 25 are superposed, and the glass 23 and the metal 25 are lower than the softening point and more than the melting point of the metal 25. In a low temperature atmosphere, a relatively high DC voltage may be applied to the metal 25 side for a short time by the DC power supply 21 so that the metal 25 side has a positive potential and a voltage is applied between the glass 23 and the metal 25.

【0004】 この陽極接合法による接合では、熱サイクルに耐える低温での気密接合が可能 であり、そしてさらに、大きな加圧力が不要で、かつコストが安いなどの長所を 有する。This anodic bonding method has the advantages that it is possible to perform airtight bonding at a low temperature that can endure a thermal cycle, does not require a large pressing force, and is inexpensive.

【0005】[0005]

【考案が解決しようとする課題】[Problems to be solved by the device]

この陽極接合技術を、センサーや水晶振動子や発振器などの電子部品における パッケージ部材と蓋との気密封止方法として応用するにあたり、直流電圧の印加 方法を、図3を用いて説明する。図3(a)に示すように、蓋31をプラスの電 位、パッケージ部材33をマイナスの電位を印加する方法と、図3(b)に示す ように、図3(a)とは逆に、蓋31をマイナス電位、パッケージ部材33をプ ラス電位を印加する方法との2種類の電圧印加方法がある。 In applying this anodic bonding technique as a method for hermetically sealing a package member and a lid in an electronic component such as a sensor, a crystal oscillator, or an oscillator, a method of applying a DC voltage will be described with reference to FIG. As shown in FIG. 3 (a), a method of applying a positive potential to the lid 31 and a negative potential to the package member 33, and as shown in FIG. 3 (b), the reverse of FIG. 3 (a). There are two types of voltage application methods: a method of applying a negative potential to the lid 31 and a method of applying a plus potential to the package member 33.

【0006】 図3(a)に示す蓋31をプラス電位、パッケージ部材33をマイナス電位に して印加するときは、図4(a)に示すように、蓋41とパッケージ部材45の 接合部分に、金属薄膜や半導体薄膜からなる接合層43を形成して、接合層43 から電極端子を取り出し、直流電源47を用いて接合する方法と、図4(b)に 示すように、蓋41の材料を電気的な導体、あるいは半導体の材料を使用して蓋 41から電極端子を取り出して、陽極接合する方法とがある。When the lid 31 shown in FIG. 3A is applied with a positive potential and the package member 33 is applied with a negative potential, the lid 41 and the package member 45 are joined to each other as shown in FIG. 4A. , A method of forming a bonding layer 43 made of a metal thin film or a semiconductor thin film, taking out electrode terminals from the bonding layer 43, and bonding using a DC power supply 47, and a material for the lid 41 as shown in FIG. 4 (b). There is a method in which an electrode terminal is taken out from the lid 41 by using an electric conductor or a semiconductor material and anodically bonded.

【0007】 図4(a)に示す金属や半導体からなる接合層43から電極端子を取り出して 接合する方法は、この接合層43が非常に薄いため、安定して電極を取り出すこ とが難しい。さらに、図4(b)に示す電気的に導体あるいは半導体の材料を使 用する蓋41から端子を取り出して接合する方法は、蓋41材料に対する制約が 存在し、アルミナやガラスなどの絶縁物は、蓋41として使用できないという課 題を有する。In the method of taking out the electrode terminals from the joining layer 43 made of metal or semiconductor and joining them as shown in FIG. 4A, it is difficult to take out the electrodes stably because the joining layer 43 is very thin. Further, in the method of taking out and joining the terminals from the lid 41 that electrically uses a conductor or semiconductor material as shown in FIG. 4 (b), there are restrictions on the material of the lid 41, and insulators such as alumina and glass are not available. , The lid 41 cannot be used.

【0008】 本考案の目的は、上記課題を解決して、陽極接合技術を用いてパッケージ部材 と蓋との気密封止を行う電子部品において、蓋とパッケージ部材の陽極接合が、 蓋の材料に左右されず、かつ蓋から電極端子の取り出しが容易な構造を有する電 子部品を提供することである。An object of the present invention is to solve the above problems and, in an electronic component in which a package member and a lid are hermetically sealed by using an anodic bonding technique, the anodic bonding between the lid and the package member is a material for the lid. An object of the present invention is to provide an electronic component having a structure that is not affected by the change and in which the electrode terminal can be easily taken out from the lid.

【0009】[0009]

【課題を解決するための手段】[Means for Solving the Problems]

上記目的を達成するために、本考案においては、下記記載の構成を採用する。 In order to achieve the above object, the present invention employs the following configurations.

【0010】 本考案の電子部品は、パッケージ部材と蓋とを陽極接合して気密封止を行う電 子部品において、蓋はパッケージ部材との接合面とこの接合面の対向面とに導体 膜を設け、接合面の導体膜と対向面の導体膜とは電気的に導通していることを特 徴とする。The electronic component of the present invention is an electronic component in which a package member and a lid are anodically bonded to perform hermetic sealing, and the lid has a conductive film on a bonding surface with the package member and a surface facing the bonding surface. It is provided that the conductor film on the joint surface and the conductor film on the opposite surface are electrically connected to each other.

【0011】[0011]

【作用】[Action]

本考案の蓋は、パッケージ部材と蓋との接合面と、この接合面の対向面に、チ タン、アルミニウム、ニッケル、あるいはタンタルなどの金属薄膜、またはシリ コンやガリウム砒素などの半導体薄膜からなる導体膜を形成する。したがって、 蓋の材料に関係なく、蓋をプラス電位、パッケージ部材をマイナス電位に直流電 圧を印加して、陽極接合技術により、パッケージ部材と蓋とを気密封止を行うこ とができる。 The lid of the present invention comprises a joint surface between the package member and the lid, and a metal thin film made of titanium, aluminum, nickel, tantalum, or the like, or a semiconductor thin film made of silicon, gallium arsenide, or the like on the opposite surface of the joint surface. A conductor film is formed. Therefore, irrespective of the material of the lid, it is possible to apply a DC voltage to the lid with a positive potential and to the package member with a negative potential and to hermetically seal the package member and the lid by the anodic bonding technique.

【0012】[0012]

【実施例】【Example】

以下、本考案の実施例を図面を用いて説明する。図1(e)は、本考案の電子 部品の構成を示す断面図である。 Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 (e) is a sectional view showing the configuration of the electronic component of the present invention.

【0013】 図1(e)に示すように、センサーや水晶振動子や発振器などの電気部品を収 納するパッケージ部材19と蓋15とを有する。そして蓋15に、この蓋15と パッケージ部材19との接合面と、この接合面の対向面に導体膜17を設ける。 ここで接合面の導体膜17と、接合面の対向面に設ける導体膜17とは、電気的 に導通するように構成する。As shown in FIG. 1E, it has a package member 19 for accommodating electrical parts such as a sensor, a crystal oscillator, and an oscillator, and a lid 15. Then, the lid 15 is provided with the conductor film 17 on the joint surface between the lid 15 and the package member 19 and on the surface opposite to the joint surface. Here, the conductor film 17 on the joint surface and the conductor film 17 provided on the opposite surface to the joint surface are configured to be electrically conductive.

【0014】 導体膜17としては、チタンやアルミニウムやニッケルやタンタルなどの金属 薄膜、あるいはシリコンやガリウム砒素などの半導体薄膜で構成する。The conductor film 17 is made of a metal thin film such as titanium, aluminum, nickel or tantalum, or a semiconductor thin film such as silicon or gallium arsenide.

【0015】 この蓋15とパッケージ部材19としては、ガラスやアルミナやガラスセラミ ックスなどの材料で構成する。The lid 15 and the package member 19 are made of a material such as glass, alumina or glass ceramics.

【0016】 パッケージ部材19や蓋15として、アルミナやガラスセラミックスなどを使 用するときは、接合面にガラス層を設ける必要がある。When alumina or glass ceramics is used for the package member 19 and the lid 15, it is necessary to provide a glass layer on the bonding surface.

【0017】 そしてさらに、図1(e)に示すように、本考案では蓋15に凹部を設けた例 を示しているが、凹部を設けずに平板状の形状をした蓋15でも良い。Further, as shown in FIG. 1E, the present invention shows an example in which the lid 15 is provided with a concave portion, but the lid 15 may have a flat plate shape without the concave portion.

【0018】 本考案においては、蓋15の材料に左右されずに陽極接合を行うことができ、 さらに陽極接合において、電極端子を蓋15上面にて直接取り出すことができ、 陽極接合の作業性が向上する。In the present invention, the anodic bonding can be performed without being influenced by the material of the lid 15, and in the anodic bonding, the electrode terminals can be directly taken out on the upper surface of the lid 15, and the workability of the anodic bonding is improved. improves.

【0019】 つぎに、図1(e)に示す本考案の構成を得るための製造方法を、図1(a) から図1(e)の断面図を用いて説明する。Next, a manufacturing method for obtaining the configuration of the present invention shown in FIG. 1E will be described with reference to the sectional views of FIGS. 1A to 1E.

【0020】 まず、図1(a)に示すように、平滑性の良い厚さ0.8mmの基板11の上 に、回転塗布法によりレジスト13を膜厚約1μm形成する。First, as shown in FIG. 1A, a resist 13 having a thickness of about 1 μm is formed on a substrate 11 having a good smoothness and a thickness of 0.8 mm by a spin coating method.

【0021】 つぎに、図1(b)に示すように、フォトマスクを用いて露光、および現像を 行い、所定のレジストパターン14を基板11上に形成する。Next, as shown in FIG. 1B, exposure and development are performed using a photomask to form a predetermined resist pattern 14 on the substrate 11.

【0022】 つぎに、図1(c)に示すように、レジストパターン14をマスクにしてフッ 酸と硝酸の混合液を用いて、基板11を深さ0.4mmエッチングして、凹部を 設けた蓋15を形成する。Next, as shown in FIG. 1C, the substrate 11 was etched to a depth of 0.4 mm using a mixed solution of hydrofluoric acid and nitric acid using the resist pattern 14 as a mask to form a recess. The lid 15 is formed.

【0023】 その後、エッチングマスクとして用いたレジストパターン14を除去し、図1 (d)に示すように蓋15表面の上面、下面、および側面の全面に真空蒸着法や スパッタリング法により、チタンやタンタルやアルミニウムやニッケルなどの金 属薄膜や、シリコンやガリウム砒素などの半導体薄膜からなる導体膜17を膜厚 1〜2μm形成する。After that, the resist pattern 14 used as the etching mask is removed, and as shown in FIG. 1D, titanium or tantalum is deposited on the entire upper surface, lower surface, and side surface of the lid 15 by vacuum deposition or sputtering. A conductor film 17 made of a metal thin film of aluminum, nickel, or the like, or a semiconductor thin film of silicon, gallium arsenide, or the like is formed to a thickness of 1 to 2 μm.

【0024】 その後、図1(e)に示すように、全面に導体膜17を形成した蓋15と、ガ ラスからなるパッケージ部材19を重ね合わせる。Thereafter, as shown in FIG. 1E, the lid 15 having the conductor film 17 formed on the entire surface thereof and the package member 19 made of glass are superposed on each other.

【0025】 そして、蓋15とパッケージ部材19とを温度400℃に加熱し、蓋15の上 面をプラス電位、パッケージ部材19をマイナス電位にして、直流電源18を用 いて、400Vの直流電圧を10分間印加し、蓋15とパッケージ部材19との 接合を行う。なお蓋15に印加するプラス電位は、蓋15の側面部に印加するよ うにしてもよい。Then, the lid 15 and the package member 19 are heated to a temperature of 400 ° C., the upper surface of the lid 15 is set to a positive potential, the package member 19 is set to a negative potential, and a DC voltage of 400 V is applied by using the DC power supply 18. The voltage is applied for 10 minutes, and the lid 15 and the package member 19 are joined. The positive potential applied to the lid 15 may be applied to the side surface of the lid 15.

【0026】 蓋に形成する導体膜は、図5(a)に示すように、蓋51全表面に導体膜53 を形成しても良いが、図5(b)に示すように、蓋51に設ける導体膜53は、 接合面55と、接合面55の対向面とが側面部57で、電気的に導通するように 構成して、直流電圧印加部分である上面と接合面55との導体膜53の導通が取 ることができる構造になっていれば良い。As for the conductor film formed on the lid, the conductor film 53 may be formed on the entire surface of the lid 51 as shown in FIG. 5A, but as shown in FIG. The conductor film 53 to be provided is configured such that the joint surface 55 and the surface opposite to the joint surface 55 are electrically connected to each other at the side surface portion 57, and the conductor film between the upper surface which is a DC voltage application portion and the joint surface 55. It suffices that the structure is such that 53 can be electrically connected.

【0027】[0027]

【考案の効果】[Effect of device]

以上述べたように、本考案の構造を用いることで、蓋をプラス電位、パッケー ジ部材をマイナス電位に印加して陽極接合を行う場合において、蓋とパッケージ 部材の接合が、蓋の材質に左右されずかつ、陽極接合の電圧印加のための電極端 子を蓋から容易に取り出すことができる。したがって、陽極接合時に従来のよう に金属薄膜や半導体薄膜からなる接合体から電極端子をわざわざ取り出さなくて も、本考案の構造を用いると蓋の上部から端子を取り出せるため、端子取り出し の接触抵抗の点で安定した電圧の印加ができる。これによって製造歩留まりの向 上を図ることができる。 As described above, by using the structure of the present invention, when anodic bonding is performed by applying a positive potential to the lid and a negative potential to the package member, the bonding between the lid and the package member depends on the material of the lid. Moreover, the electrode terminal for applying the voltage for anodic bonding can be easily taken out from the lid. Therefore, at the time of anodic bonding, it is possible to take out the terminal from the upper part of the lid by using the structure of the present invention without having to take out the electrode terminal from the joined body composed of a metal thin film or a semiconductor thin film as in the conventional case. A stable voltage can be applied at this point. This can improve the manufacturing yield.

【0028】 蓋とパッケージ部材を陽極接合技術で接合するとき、蓋とパッケージ部材を密 着させる必要がある。本考案の構造では、蓋の上部に電圧を印加できるため、こ の蓋とパッケージ部材を密着させるための加圧機構を端子自体に持たせて陽極接 合を行うことができる。これにより陽極接合のための治具の構造を単純化するこ とが可能となる効果も有する。When the lid and the package member are joined by the anodic bonding technique, it is necessary to tightly bond the lid and the package member. In the structure of the present invention, since a voltage can be applied to the upper portion of the lid, the terminal itself can be provided with a pressurizing mechanism for bringing the lid and the package member into close contact with each other for anodic bonding. This also has the effect that the structure of the jig for anodic bonding can be simplified.

【0029】 また、蓋に凹部を設けることで、パッケージの内部容積を大きくすることがで き、電子部品の外形寸法を小型化することができる。Further, by providing the recess on the lid, the internal volume of the package can be increased, and the external dimensions of the electronic component can be reduced.

【0030】 そしてさらに、蓋全体を導体膜で覆うため、高周波振動子の電子部品において は、外的ノイズの遮断に有効で、シーリング効果を得ることができる。Furthermore, since the entire lid is covered with the conductive film, it is effective in blocking external noise and a sealing effect can be obtained in the electronic component of the high-frequency vibrator.

【0031】 以上のことより、本考案の構造により、電子部品の小型化、および高安定化を 達成することができる。From the above, the structure of the present invention can achieve miniaturization and high stability of electronic components.

【図面の簡単な説明】[Brief description of drawings]

【図1】本考案の実施例における電子部品を示す断面図
である。
FIG. 1 is a sectional view showing an electronic component according to an embodiment of the present invention.

【図2】陽極接合法を用いて接合する原理を説明するた
めの断面図である。
FIG. 2 is a cross-sectional view for explaining the principle of joining using an anodic joining method.

【図3】陽極接合技術を用いた電子部品の封止方法を示
す断面図である。
FIG. 3 is a cross-sectional view showing a method for sealing an electronic component using an anodic bonding technique.

【図4】従来例における陽極接合法を用いた電子部品の
封止方法を示す断面図である。
FIG. 4 is a cross-sectional view showing a method of sealing an electronic component using an anodic bonding method in a conventional example.

【図5】本考案における電子部品に設ける導体膜の構造
を示す断面図である。
FIG. 5 is a sectional view showing a structure of a conductor film provided in an electronic component according to the present invention.

【符号の説明】[Explanation of symbols]

11 基板 15 蓋 17 導体膜 18 直流電源 19 パッケージ部材 11 substrate 15 lid 17 conductor film 18 DC power supply 19 package member

Claims (3)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】 パッケージ部材と蓋とを陽極接合して気
密封止を行う電子部品において、蓋はパッケージ部材と
の接合面とこの接合面の対向面とに導体膜を設け、接合
面の導体膜と対向面の導体膜とは電気的に導通している
ことを特徴とする電子部品。
1. In an electronic component in which a package member and a lid are anodically bonded to hermetically seal, a lid is provided with a conductor film on a joint surface with the package member and a surface opposite to the joint surface, and a conductor on the joint surface is provided. An electronic component, wherein the film and the conductor film on the opposite surface are electrically connected to each other.
【請求項2】 請求項1記載の蓋は、凹部を有すること
を特徴とする電子部品。
2. The electronic component according to claim 1, wherein the lid has a recess.
【請求項3】 請求項1に記載の導体膜は、導電性を有
する金属薄膜、または半導体薄膜からなることを特徴と
する電子部品。
3. The electronic component according to claim 1, wherein the conductor film is made of a conductive metal thin film or a semiconductor thin film.
JP458993U 1993-01-22 1993-01-22 Electronic parts Pending JPH0658619U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP458993U JPH0658619U (en) 1993-01-22 1993-01-22 Electronic parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP458993U JPH0658619U (en) 1993-01-22 1993-01-22 Electronic parts

Publications (1)

Publication Number Publication Date
JPH0658619U true JPH0658619U (en) 1994-08-12

Family

ID=11588234

Family Applications (1)

Application Number Title Priority Date Filing Date
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Cited By (10)

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WO2007116905A1 (en) * 2006-04-04 2007-10-18 Hitachi, Ltd. Electronic component union, electronic circuit module utilizing the same, and process for manufacturing the same
JP2008166997A (en) * 2006-12-27 2008-07-17 Kyocera Kinseki Corp Method for manufacturing piezoelectric vibrator
JP2008166996A (en) * 2006-12-27 2008-07-17 Kyocera Kinseki Corp Piezoelectric vibrator and manufacturing method therefor
JP2009111930A (en) * 2007-10-31 2009-05-21 Kyocera Kinseki Corp Method of manufacturing piezoelectric vibrator
JP2009200778A (en) * 2008-02-21 2009-09-03 Seiko Instruments Inc Manufacturing method for piezoelectric vibrator, piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled clock
WO2010097900A1 (en) * 2009-02-25 2010-09-02 セイコーインスツル株式会社 Method for producing package, method for manufacturing piezoelectric transducer, oscillator, electronic device and radio-controlled timepiece
JP2011041069A (en) * 2009-08-12 2011-02-24 Seiko Instruments Inc Method for manufacturing package, method for manufacturing piezoelectric vibrator, piezoelectric vibrator, oscillator, electronic equipment, and radio-controlled timepiece
JP2011049663A (en) * 2009-08-25 2011-03-10 Seiko Instruments Inc Package manufacturing method, piezoelectric vibrator manufacturing method, oscillator, electronic equipment, and radio wave clock
JP2011188145A (en) * 2010-03-05 2011-09-22 Seiko Instruments Inc Manufacturing method of electronic device package, electronic device package, and oscillator
JP2015173166A (en) * 2014-03-11 2015-10-01 セイコーインスツル株式会社 Optical sensor

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007116905A1 (en) * 2006-04-04 2007-10-18 Hitachi, Ltd. Electronic component union, electronic circuit module utilizing the same, and process for manufacturing the same
JP2008166997A (en) * 2006-12-27 2008-07-17 Kyocera Kinseki Corp Method for manufacturing piezoelectric vibrator
JP2008166996A (en) * 2006-12-27 2008-07-17 Kyocera Kinseki Corp Piezoelectric vibrator and manufacturing method therefor
JP2009111930A (en) * 2007-10-31 2009-05-21 Kyocera Kinseki Corp Method of manufacturing piezoelectric vibrator
JP2009200778A (en) * 2008-02-21 2009-09-03 Seiko Instruments Inc Manufacturing method for piezoelectric vibrator, piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled clock
US8448311B2 (en) 2008-02-21 2013-05-28 Seiko Instruments Inc. Method of manufacturing a piezoelectric vibrator
WO2010097900A1 (en) * 2009-02-25 2010-09-02 セイコーインスツル株式会社 Method for producing package, method for manufacturing piezoelectric transducer, oscillator, electronic device and radio-controlled timepiece
JPWO2010097900A1 (en) * 2009-02-25 2012-08-30 セイコーインスツル株式会社 Package manufacturing method, piezoelectric vibrator manufacturing method, oscillator, electronic device, and radio timepiece
JP2011041069A (en) * 2009-08-12 2011-02-24 Seiko Instruments Inc Method for manufacturing package, method for manufacturing piezoelectric vibrator, piezoelectric vibrator, oscillator, electronic equipment, and radio-controlled timepiece
JP2011049663A (en) * 2009-08-25 2011-03-10 Seiko Instruments Inc Package manufacturing method, piezoelectric vibrator manufacturing method, oscillator, electronic equipment, and radio wave clock
JP2011188145A (en) * 2010-03-05 2011-09-22 Seiko Instruments Inc Manufacturing method of electronic device package, electronic device package, and oscillator
JP2015173166A (en) * 2014-03-11 2015-10-01 セイコーインスツル株式会社 Optical sensor

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