JPH065740A - Semiconductor integrated circuit package device - Google Patents

Semiconductor integrated circuit package device

Info

Publication number
JPH065740A
JPH065740A JP4161119A JP16111992A JPH065740A JP H065740 A JPH065740 A JP H065740A JP 4161119 A JP4161119 A JP 4161119A JP 16111992 A JP16111992 A JP 16111992A JP H065740 A JPH065740 A JP H065740A
Authority
JP
Japan
Prior art keywords
resin
integrated circuit
semiconductor integrated
exchange resin
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4161119A
Other languages
Japanese (ja)
Inventor
Hiroshi Furusaki
浩 古崎
Shinichi Mori
真一 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4161119A priority Critical patent/JPH065740A/en
Publication of JPH065740A publication Critical patent/JPH065740A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PURPOSE:To prevent invasion of movable cation or anion which is not desirable for a semiconductor integrated circuit package device into a semiconductor integrated circuit chip and to prevent corrosion of the chip by incorporating ion exchange resin in resin for constituting a resin package. CONSTITUTION:A semiconductor integrated circuit chip 2 provided on a board 3 of a semiconductor integrated circuit package device 7 is formed in a structure connected to a lead terminal 4 with a wire 5 and sealed in a molded resin package 1. Here, the package 1 is formed of epoxy resin in which frame retardant, filler, etc., are added and cation exchange resin 6 is added. Thus, ion to be bonded to exchange group of the existing ion exchange resin 6 is ion exchanged with movable ion which is not desirable with the same charge tending to be invaded into the chip or the package to prevent invasion of the movable ion.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、半導体集積回路チップ
を合成樹脂封止した半導体集積回路パッケージ装置に関
し、更に詳しくは可動イオンによる半導体集積回路チッ
プの汚染を防止するための半導体集積回路パッケージ装
置の改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit package device in which a semiconductor integrated circuit chip is sealed with synthetic resin, and more specifically, a semiconductor integrated circuit package device for preventing contamination of the semiconductor integrated circuit chip by movable ions. Related to the improvement of.

【０００２】[0002]

【従来の技術】近年、多くの場合、半導体集積回路チッ
プは成形された合成樹脂で直接封止され、半導体集積回
路パッケージ装置として製品化される。半導体集積回路
チップを覆うため、主としてエポキシ樹脂が用いられ、
必要に応じてフィラーやエステル系ワックスなどのカッ
プリング剤や内部離型剤、Ｂｒ化合物等の難燃剤、カー
ボンブラック等の着色剤が樹脂に添加されている。2. Description of the Related Art In recent years, in many cases, a semiconductor integrated circuit chip is directly sealed with a molded synthetic resin and commercialized as a semiconductor integrated circuit package device. Epoxy resin is mainly used to cover the semiconductor integrated circuit chip,
If necessary, a coupling agent such as a filler or an ester wax, an internal release agent, a flame retardant such as a Br compound, and a coloring agent such as carbon black are added to the resin.

【０００３】従来の半導体集積回路パッケージ装置にお
いて、チップに侵入しようとする可動イオンについて
は、対策がなされていない。図８は従来の半導体集積回
路パッケージ装置を示す図であり、半導体集積回路パッ
ケージ装置(70)において、基板(3)上に設けられた半導
体集積回路チップ(2)はリード端子(4)にワイヤ(5)で接
続され、かつ成形された樹脂パッケージ(71)内に封入さ
れている。樹脂パッケージ(61)は難燃剤、フィラー及び
カップリング剤等が添加されたエポキシ樹脂からなって
いる。In the conventional semiconductor integrated circuit package device, no countermeasure is taken for mobile ions trying to enter the chip. FIG. 8 is a diagram showing a conventional semiconductor integrated circuit package device. In the semiconductor integrated circuit package device (70), the semiconductor integrated circuit chip (2) provided on the substrate (3) is connected to the lead terminal (4) by a wire. It is connected in (5) and is enclosed in a molded resin package (71). The resin package (61) is made of an epoxy resin added with a flame retardant, a filler, a coupling agent and the like.

【０００４】[0004]

【発明が解決しようとする課題】図８に示すような半導
体集積回路パッケージ装置において、半導体集積回路チ
ップ(2)に侵入しようとする可動イオンについては対策
がなされていないので、半導体集積回路チップのパッド
部分から可動イオンが侵入し、半導体集積回路チップを
汚染する恐れがある。In the semiconductor integrated circuit package device as shown in FIG. 8, no countermeasure is taken for mobile ions that try to enter the semiconductor integrated circuit chip (2). Mobile ions may enter from the pad portion and contaminate the semiconductor integrated circuit chip.

【０００５】従って、本発明の目的は、上述のような課
題を解決するためになされたもので、樹脂パッケージを
有する半導体集積回路パッケージ装置において、可動イ
オンによる半導体集積回路チップの腐食を防止する構造
をもった半導体集積回路パッケージ装置を提供すること
にある。Therefore, an object of the present invention is to solve the above problems, and in a semiconductor integrated circuit package device having a resin package, a structure for preventing corrosion of the semiconductor integrated circuit chip due to movable ions. It is to provide a semiconductor integrated circuit package device having the above.

【０００６】[0006]

【課題を解決するための手段】即ち、本発明の第１の発
明に係る半導体集積回路パッケージ装置は、基板、基板
上に設置された半導体集積回路チップ、リード端子、該
半導体集積回路チップと該リード端子を結ぶワイヤ及び
これら構成部材を樹脂で被覆することにより得られる樹
脂パッケージを備えてなる半導体集積回路パッケージ装
置において、前記樹脂がイオン交換樹脂を含有すること
を特徴とする。That is, a semiconductor integrated circuit package device according to a first aspect of the present invention is a substrate, a semiconductor integrated circuit chip mounted on the substrate, a lead terminal, the semiconductor integrated circuit chip, and the semiconductor integrated circuit chip. A semiconductor integrated circuit package device comprising a wire connecting lead terminals and a resin package obtained by coating these constituent members with a resin, wherein the resin contains an ion exchange resin.

【０００７】樹脂パッケージを形成するために使用され
る合成樹脂に添加されるイオン交換樹脂は、陽イオン交
換樹脂、陰イオン交換樹脂、両性イオン交換樹脂または
陽イオン交換樹脂と陰イオン交換樹脂の混合物であるこ
とができる。陽イオン交換樹脂は陽イオン例えばＮａ+
イオンによる半導体集積回路チップの汚染防止のために
使用することができる。ここで、前記合成樹脂は特に限
定されるものではなく、慣用のものを使用することがで
き、例えばエポキシ系樹脂等を挙げることができる。ま
た、必要に応じて慣用のＢｒ化合物等の難燃剤やフィラ
ー等を樹脂に添加することができる。The ion exchange resin added to the synthetic resin used to form the resin package may be a cation exchange resin, an anion exchange resin, an amphoteric ion exchange resin or a mixture of cation exchange resin and anion exchange resin. Can be Cation exchange resins are cations such as Na +
It can be used to prevent contamination of semiconductor integrated circuit chips by ions. Here, the synthetic resin is not particularly limited, and a conventional one can be used, and examples thereof include an epoxy resin. If necessary, a flame retardant such as a conventional Br compound, a filler, or the like can be added to the resin.

【０００８】本発明に使用する陽イオン交換樹脂は特に
限定されるものではなく、例えばフェノールスルホン酸
樹脂またはカルボン酸樹脂とすることができる。このよ
うな陽イオン交換樹脂材料は例えば粒状あるいは球状あ
るいは膜状のものをそのままあるいは何らかの加工をし
た後、配合することができる。The cation exchange resin used in the present invention is not particularly limited and may be, for example, a phenol sulfonic acid resin or a carboxylic acid resin. Such a cation exchange resin material can be blended, for example, as a granular, spherical, or film-like material as it is or after some processing.

【０００９】また、上記陽イオン交換樹脂は、モールド
樹脂中に均一な濃度で添加されてもよいし、異なる濃
度、粒度分布をもたせてもよく、あるいは陽イオン交換
樹脂の添加されている層と、添加されていない層が重ね
られる多重構造としてもよい。これによりモールド樹脂
の強度、応力などのコントロールができる。なお、陽イ
オン交換樹脂は、対象となる可動イオンの種類や半導体
集積回路パッケージへの影響等を考慮して所望のイオン
型に調整したものを使用することができる。The above cation exchange resin may be added to the mold resin at a uniform concentration, may have different concentrations and particle size distributions, or may be added to the layer to which the cation exchange resin is added. Alternatively, it may have a multiple structure in which layers not added are stacked. This makes it possible to control the strength and stress of the mold resin. As the cation exchange resin, a cation exchange resin adjusted to a desired ion type can be used in consideration of the types of target movable ions and the influence on the semiconductor integrated circuit package.

【００１０】次に、本発明に使用する陰イオン交換樹脂
としては例えば第４級アンモニウム樹脂等を挙げること
ができる。陰イオン交換樹脂は可動陰イオン例えばＣｌ
-等による半導体集積回路チップの汚染を阻止すること
ができる。なお、陰イオン交換樹脂の使用は上記陽イオ
ン交換樹脂の使用に準ずる。Next, examples of the anion exchange resin used in the present invention include quaternary ammonium resins. Anion exchange resin is a mobile anion such as Cl
- it is possible to prevent contamination of the semiconductor integrated circuit chip by like. The use of the anion exchange resin is similar to the use of the above cation exchange resin.

【００１１】次に、本発明に使用する両性イオン交換樹
脂としては例えばキレート樹脂、スネークケージ樹脂等
を挙げることができる。両性イオン交換樹脂は可動陽イ
オン並びに陰イオンをほとんどのｐＨ範囲で捕捉するこ
とができ、陽イオン及び陰イオンによる半導体集積回路
チップの汚染を阻止することができる。なお、陰イオン
交換樹脂の使用は上記陽イオン交換樹脂の使用に準ず
る。Next, examples of the amphoteric ion exchange resin used in the present invention include chelate resins and snake cage resins. The amphoteric ion exchange resin can capture mobile cations and anions in almost all pH ranges, and can prevent contamination of semiconductor integrated circuit chips by cations and anions. The use of the anion exchange resin is similar to the use of the above cation exchange resin.

【００１２】なお、陽イオン交換樹脂と陰イオン交換樹
脂を同時に樹脂パッケージに配合することにより両性イ
オン交換樹脂を配合した時と同様の効果が得られる。By mixing the cation exchange resin and the anion exchange resin in the resin package at the same time, the same effect as when the amphoteric ion exchange resin is mixed can be obtained.

【００１３】次に、本発明に第２の発明に係る半導体集
積回路パッケージ装置は、基板、基板上に設置された半
導体集積回路チップ、リード端子、該半導体集積回路チ
ップと該リード端子を結ぶワイヤ及びこれら構成部材を
合成樹脂で被覆することにより得られる樹脂パッケージ
を備えてなる半導体集積回路パッケージ装置において、
前記樹脂パッケージ上の所望の部位にイオン交換樹脂の
樹脂膜あるいはイオン交換樹脂を添加した樹脂膜を積層
することを特徴とする。Next, a semiconductor integrated circuit package device according to a second aspect of the present invention is a substrate, a semiconductor integrated circuit chip installed on the substrate, a lead terminal, and a wire connecting the semiconductor integrated circuit chip and the lead terminal. And a semiconductor integrated circuit package device comprising a resin package obtained by coating these constituent members with a synthetic resin,
A resin film of an ion exchange resin or a resin film to which an ion exchange resin is added is laminated on a desired portion on the resin package.

【００１４】更に、本発明の第３の発明に係る半導体集
積回路パッケージ装置は、基板、基板上に設置された半
導体集積回路チップ、リード端子、該半導体集積回路チ
ップと該リード端子を結ぶワイヤ及びこれら構成部材を
合成樹脂で被覆することにより得られる樹脂パッケージ
を備えてなる半導体集積回路パッケージ装置において、
前記基板、半導体集積回路チップ及びリード端子と樹脂
パッケージの界面所望の部位にイオン交換樹脂の樹脂膜
あるいはイオン交換樹脂を添加した樹脂膜を設置するこ
とを特徴とする。Further, a semiconductor integrated circuit package device according to a third aspect of the present invention is a substrate, a semiconductor integrated circuit chip installed on the substrate, a lead terminal, a wire connecting the semiconductor integrated circuit chip and the lead terminal, and In a semiconductor integrated circuit package device comprising a resin package obtained by coating these constituent members with a synthetic resin,
An interface between the substrate, the semiconductor integrated circuit chip, the lead terminal, and the resin package is provided with a resin film of an ion exchange resin or a resin film to which an ion exchange resin is added, at a desired site.

【００１５】また、本発明の第４の発明に係る半導体集
積回路パッケージ装置は、基板、基板上に設置された半
導体集積回路チップ、リード端子、該半導体集積回路チ
ップと該リード端子を結ぶワイヤ及びこれら構成部材を
合成樹脂で被覆することにより得られる樹脂パッケージ
を備えてなる半導体集積回路パッケージ装置において、
前記基板、半導体集積回路チップ及びリード端子と樹脂
パッケージの界面所望の部位にイオン交換樹脂の樹脂膜
あるいはイオン交換樹脂を添加した樹脂膜を設置し、更
に、前記樹脂パッケージ上の所望の部位にイオン交換樹
脂の樹脂膜あるいはイオン交換樹脂を添加した樹脂膜を
積層することを特徴とする。A semiconductor integrated circuit package device according to a fourth aspect of the present invention is a substrate, a semiconductor integrated circuit chip mounted on the substrate, a lead terminal, a wire connecting the semiconductor integrated circuit chip and the lead terminal, and In a semiconductor integrated circuit package device comprising a resin package obtained by coating these constituent members with a synthetic resin,
Interface between the substrate, the semiconductor integrated circuit chip and the lead terminals and the resin package A resin film of an ion exchange resin or a resin film added with an ion exchange resin is installed at a desired site, and further, an ion is provided at a desired site on the resin package. A feature is that a resin film of an exchange resin or a resin film to which an ion exchange resin is added is laminated.

【００１６】本発明の第２発明ないし第４発明に係る半
導体集積回路パッケージ装置のイオン交換樹脂の樹脂膜
あるいはイオン交換樹脂を添加した樹脂膜に使用される
イオン交換樹脂は、その用途に応じて陽イオン交換樹
脂、陰イオン交換樹脂、両性イオン交換樹脂または陽イ
オン交換樹脂と陰イオン交換樹脂を併用したものであっ
てもよい。また、樹脂膜の使用部位により、イオン交換
樹脂の種類を変化させる構成としてもよい。The ion exchange resin used in the resin film of the ion exchange resin or the resin film to which the ion exchange resin is added in the semiconductor integrated circuit package device according to the second invention to the fourth invention of the present invention depends on its use. It may be a cation exchange resin, an anion exchange resin, an amphoteric ion exchange resin, or a combination of a cation exchange resin and an anion exchange resin. Further, the type of the ion exchange resin may be changed depending on the part where the resin film is used.

【００１７】[0017]

【作用】上記本発明の第１ないし第４発明に係る構成の
半導体集積回路パッケージ装置は、存在するイオン交換
樹脂の交換基と結合しているイオンが、半導体集積回路
チップあるいは樹脂パッケージに侵入しようとする同電
荷を有する望ましくない可動イオンとイオン交換し、可
動イオンの侵入を阻止する。その際に、次のような中和
反応、中性塩分解反応、複分解反応を行うものと推察さ
れる。ここで、Ｒは樹脂基体を表す。In the semiconductor integrated circuit package device having the above-mentioned first to fourth aspects of the present invention, the ions bonded to the exchange group of the existing ion exchange resin will enter the semiconductor integrated circuit chip or the resin package. And ion exchange with an undesired mobile ion having the same electric charge, which prevents the mobile ion from entering. At that time, it is presumed that the following neutralization reaction, neutral salt decomposition reaction, and metathesis reaction are carried out. Here, R represents a resin substrate.

【００１８】陽イオン交換樹脂の場合 (中和反応) Ｒ−Ｈ＋ＮａＯＨ→Ｒ−Ｎａ＋Ｈ2Ｏ (中性塩分解反応) Ｒ−Ｈ＋ＮａＣｌ→Ｒ−Ｎａ＋ＨＣｌ (複分解反応) Ｒ−Ｎａ＋ＫＣｌ→Ｒ−Ｋ＋ＮａＣｌIn case of cation exchange resin (neutralization reaction) R-H + NaOH → R-Na + H 2 O (neutral salt decomposition reaction) R-H + NaCl → R-Na + HCl (metathesis reaction) R-Na + KCl → R-K + NaCl

【００１９】陰イオン交換樹脂の場合 (中和反応) Ｒ−ＯＨ＋ＨＣｌ→Ｒ−Ｃｌ＋Ｈ2Ｏ (中性塩分解反応) Ｒ−ＯＨ＋ＮａＣｌ→Ｒ−Ｃｌ＋ＮａＯＨ (複分解反応) Ｒ−Ｃｌ＋ＮａＢｒ→Ｒ−Ｂｒ＋ＮａＣｌIn the case of anion exchange resin (neutralization reaction) R-OH + HCl → R-Cl + H 2 O (neutral salt decomposition reaction) R-OH + NaCl → R-Cl + NaOH (metathesis reaction) R-Cl + NaBr → R-Br + NaCl

【００２０】従って、使用するイオン交換樹脂の交換基
を半導体集積回路パッケージ装置にとって無害であるイ
オン型に調整することにより、有害な可動イオンをイオ
ン交換樹脂が捕捉し、半導体集積回路パッケージ装置、
特に半導体集積回路チップへの有害な可動イオンの侵入
を阻止することができる。Therefore, by adjusting the exchange group of the ion exchange resin used to an ion type which is harmless to the semiconductor integrated circuit package device, the ion exchange resin captures harmful movable ions, and the semiconductor integrated circuit package device,
In particular, harmful mobile ions can be prevented from entering the semiconductor integrated circuit chip.

【００２１】[0021]

【実施例】実施例１．図１は本発明の半導体集積回路パ
ッケージ装置の１実施態様を示す図である。半導体集積
回路パッケージ装置(7)において、基板(3)上に設けられ
た半導体集積回路チップ(2)は、リード端子(4)にワイヤ
(5)で接続され、かつ成形された樹脂パッケージ(1)内に
封止された構造となっている。ここで、樹脂パッケージ
(1)は難燃剤、フィラー等が添加されたエポキシ樹脂か
らなっており、これに陽イオン交換樹脂(6)が添加され
ている。陽イオン交換樹脂(6)と可動陽イオンとのイオ
ン交換反応により可動イオンによる半導体集積回路チッ
プ(2)の汚染を阻止することができる。EXAMPLES Example 1. FIG. 1 is a diagram showing one embodiment of a semiconductor integrated circuit package device of the present invention. In the semiconductor integrated circuit package device (7), the semiconductor integrated circuit chip (2) provided on the substrate (3) is connected to the lead terminal (4) by a wire.
The structure is such that it is connected by (5) and is sealed in the molded resin package (1). Where the resin package
(1) is made of an epoxy resin to which a flame retardant, a filler and the like are added, and a cation exchange resin (6) is added to this. The ion exchange reaction between the cation exchange resin (6) and the movable cation can prevent contamination of the semiconductor integrated circuit chip (2) by the movable ion.

【００２２】実施例２．図２は本発明の半導体集積回路
パッケージ装置の他の実施態様を示す図である。半導体
集積回路パッケージ装置(10)は、樹脂パッケージ(1a)を
除いて実施例１に示す半導体集積回路パッケージ装置
(7)と同様の構成を有するものである。ここで、樹脂パ
ッケージ(1a)は難燃剤、フィラー等が添加されたエポキ
シ樹脂からなっており、これに陰イオン交換樹脂(11)が
添加されている。陰イオン交換樹脂(11)と可動陰イオン
とのイオン交換反応により、可動陰イオンによるチップ
の汚染を阻止することができる。Example 2. FIG. 2 is a diagram showing another embodiment of the semiconductor integrated circuit package device of the present invention. The semiconductor integrated circuit package device (10) is the semiconductor integrated circuit package device shown in the first embodiment except for the resin package (1a).
It has the same configuration as (7). Here, the resin package (1a) is made of an epoxy resin added with a flame retardant, a filler, etc., and the anion exchange resin (11) is added thereto. The ion exchange reaction between the anion exchange resin (11) and the movable anion can prevent the contamination of the chip by the movable anion.

【００２３】実施例３．図３は本発明の半導体集積回路
パッケージ装置の更に他の実施態様を示す図である。半
導体集積回路パッケージ装置(20)は、樹脂パッケージ(1
b)を除いて実施例１に示す半導体集積回路パッケージ装
置(7)と同様の構成を有するものである。ここで、樹脂
パッケージ(1b)は難燃剤、フィラー等が添加されたエポ
キシ樹脂からなっており、これに両性イオン交換樹脂(2
1)を添加してある。両性イオン交換樹脂(21)と可動陽イ
オン及び可動陰イオンとのイオン交換反応により、ほと
んど全てのｐＨ範囲で陽イオン及び陰イオンによる半導
体集積回路チップの汚染を同時に阻止することができ
る。Example 3. FIG. 3 is a diagram showing still another embodiment of the semiconductor integrated circuit package device of the present invention. The semiconductor integrated circuit package device (20) includes a resin package (1
It has the same configuration as the semiconductor integrated circuit package device (7) shown in the first embodiment except for b). Here, the resin package (1b) is made of an epoxy resin to which a flame retardant, a filler and the like are added, and an amphoteric ion exchange resin (2
1) is added. The ion exchange reaction between the amphoteric ion exchange resin (21) and the movable cation and the movable anion can simultaneously prevent the contamination of the semiconductor integrated circuit chip by the cation and the anion in almost all pH ranges.

【００２４】実施例４．図４は本発明の半導体集積回路
パッケージ装置の他の実施態様を示す図である。半導体
集積回路パッケージ装置(30)は、樹脂パッケージ(1c)を
除いて実施例１に示す半導体集積回路パッケージ装置
(7)と同様の構成を有するものである。ここで、樹脂パ
ッケージ(1c)は難燃剤及びフィラー等が添加されたエポ
キシ樹脂からなっており、これに陽イオン交換樹脂(6)
と陰イオン交換樹脂(11)を同時に添加してある。これに
より実施例３と同様の効果が得られる。Example 4. FIG. 4 is a diagram showing another embodiment of the semiconductor integrated circuit package device of the present invention. The semiconductor integrated circuit package device (30) is the semiconductor integrated circuit package device shown in the first embodiment except for the resin package (1c).
It has the same configuration as (7). Here, the resin package (1c) is made of an epoxy resin to which a flame retardant and a filler are added, and a cation exchange resin (6)
And anion exchange resin (11) are added at the same time. As a result, the same effect as that of the third embodiment can be obtained.

【００２５】実施例５．図５は本発明の半導体集積回路
パッケージ装置の更に他の実施態様を示す図である。半
導体集積回路パッケージ装置(40)において、基板(3)上
に設けられた半導体集積回路チップ(2)は、リード端子
(4)にワイヤ(5)で接続され、かつ成形された樹脂パッケ
ージ(41)内に封入されている。ここで、樹脂パッケージ
(41)は、難燃剤及びフィラー等が添加されたエポキシ樹
脂からなっており、これにイオン交換樹脂が添加されて
いてもよい。この樹脂パッケージ(41)上にイオン交換樹
脂の樹脂膜あるいはイオン交換樹脂を添加した樹脂膜(4
6)を形成することができる。この樹脂膜(46)は樹脂パッ
ケージ(41)上全体を被覆してもよいし、樹脂パッケージ
(41)上の所定の位置のみを被覆する構成としてもよく、
これによって、可動イオンが樹脂パッケージ(41)上に侵
入するのを阻止することができる。なお、本実施例にお
いて、樹脂パッケージ(41)または樹脂膜(46)に使用する
イオン交換樹脂として、目的に応じて陽イオン交換樹
脂、陰イオン交換樹脂、両性イオン交換樹脂または陽イ
オン交換樹脂と陰イオン交換樹脂を使用することができ
る。Example 5. FIG. 5 is a diagram showing still another embodiment of the semiconductor integrated circuit package device of the present invention. In the semiconductor integrated circuit package device (40), the semiconductor integrated circuit chip (2) provided on the substrate (3) has lead terminals.
It is connected to (4) by a wire (5) and is enclosed in a molded resin package (41). Where the resin package
(41) is made of an epoxy resin to which a flame retardant and a filler are added, and an ion exchange resin may be added to this. A resin film of an ion exchange resin or a resin film (4) added with an ion exchange resin is formed on the resin package (41).
6) can be formed. The resin film (46) may cover the entire resin package (41), or
(41) may be configured to cover only a predetermined position on the
This makes it possible to prevent mobile ions from entering the resin package (41). In this example, as the ion exchange resin used for the resin package (41) or the resin film (46), a cation exchange resin, an anion exchange resin, an amphoteric ion exchange resin or a cation exchange resin depending on the purpose. Anion exchange resins can be used.

【００２６】実施例６．図６は本発明の半導体集積回路
パッケージ装置の他の実施態様を示す図である。半導体
集積回路パッケージ装置(50)において、基板(3)上に設
けられた半導体集積回路チップ(2)は、リード端子(4)に
ワイヤ(5)で接続された構成となっており、この構成の
例えば半導体集積回路チップ(2)の周囲、リード端子(4)
と樹脂パッケージとの界面となる部位等にイオン交換樹
脂を添加した樹脂膜またはイオン交換樹脂の樹脂膜(56)
が形成されており、かつ成形された樹脂パッケージ(51)
内に封入されている。ここで、樹脂パッケージ(51)は難
燃剤及びフィラーが添加されたエポキシ樹脂からなって
おり、これにイオン交換樹脂が添加されていてもよい。
この構成とすることにより可動イオンの樹脂パッケージ
(51)への侵入及び半導体集積回路チップ(2)の汚染を阻
止することができる。なお、本実施例において、樹脂パ
ッケージ(51)または樹脂膜(56)に使用するイオン交換樹
脂として、目的に応じて陽イオン交換樹脂、陰イオン交
換樹脂、両性イオン交換樹脂または陽イオン交換樹脂と
陰イオン交換樹脂を使用することができる。Example 6. FIG. 6 is a diagram showing another embodiment of the semiconductor integrated circuit package device of the present invention. In the semiconductor integrated circuit package device (50), the semiconductor integrated circuit chip (2) provided on the substrate (3) is configured to be connected to the lead terminal (4) by the wire (5). For example, around the semiconductor integrated circuit chip (2), lead terminals (4)
Resin film in which ion exchange resin is added to the part that becomes the interface between the resin and the resin package, or a resin film of ion exchange resin (56)
Molded and molded resin package (51)
It is enclosed inside. Here, the resin package (51) is made of an epoxy resin added with a flame retardant and a filler, and an ion exchange resin may be added thereto.
With this structure, a resin package of movable ions
It is possible to prevent the intrusion into the (51) and the contamination of the semiconductor integrated circuit chip (2). In this example, as the ion exchange resin used for the resin package (51) or the resin film (56), a cation exchange resin, an anion exchange resin, an amphoteric ion exchange resin or a cation exchange resin is used according to the purpose. Anion exchange resins can be used.

【００２７】実施例７．図７は本発明の半導体集積回路
パッケージ装置の他の実施態様を示す図である。半導体
集積回路パッケージ装置(60)において、基板(3)上に設
けられた半導体集積回路チップ(2)は、リード端子(4)に
ワイヤ(5)で接続された構成となっており、この構成の
例えば半導体集積回路チップ(2)の周囲、リード端子(4)
と樹脂パッケージとの界面となる部位等にイオン交換樹
脂を添加した樹脂膜またはイオン交換樹脂の樹脂膜(56)
が形成されており、かつ成形された樹脂パッケージ(51)
内に封入されている。ここで、樹脂パッケージ(61)は難
燃剤及びフィラーが添加されたエポキシ樹脂からなって
おり、これにイオン交換樹脂が添加されていてもよい。
本実施例においては、この樹脂パッケージ(61)上に更に
イオン交換樹脂の樹脂膜あるいはイオン交換樹脂を添加
した樹脂膜(46)を形成する。この樹脂膜(46)は樹脂パッ
ケージ(61)上全体を被覆してもよいし、樹脂パッケージ
(61)上の所定の位置のみを被覆する構成としてもよい。
この構成とすることにより可動イオンの樹脂パッケージ
(61)への侵入及び半導体集積回路チップ(2)の汚染を阻
止することができる。なお、本実施例において、樹脂パ
ッケージ(61)または樹脂膜(46)または樹脂膜(56)に使用
するイオン交換樹脂として、目的に応じて陽イオン交換
樹脂、陰イオン交換樹脂、両性イオン交換樹脂または陽
イオン交換樹脂と陰イオン交換樹脂を使用することがで
きる。Example 7. FIG. 7 is a diagram showing another embodiment of the semiconductor integrated circuit package device of the present invention. In the semiconductor integrated circuit package device (60), the semiconductor integrated circuit chip (2) provided on the substrate (3) is configured to be connected to the lead terminal (4) by the wire (5). For example, around the semiconductor integrated circuit chip (2), lead terminals (4)
Resin film in which ion exchange resin is added to the part that becomes the interface between the resin and the resin package, or a resin film of ion exchange resin (56)
Molded and molded resin package (51)
It is enclosed inside. Here, the resin package (61) is made of an epoxy resin added with a flame retardant and a filler, and an ion exchange resin may be added thereto.
In this embodiment, a resin film of an ion exchange resin or a resin film (46) to which an ion exchange resin is added is further formed on the resin package (61). The resin film (46) may cover the entire resin package (61), or
(61) Only a predetermined position may be covered.
With this structure, a resin package of movable ions
Intrusion into the (61) and contamination of the semiconductor integrated circuit chip (2) can be prevented. In this example, as the ion exchange resin used for the resin package (61) or the resin film (46) or the resin film (56), a cation exchange resin, an anion exchange resin, an amphoteric ion exchange resin depending on the purpose. Alternatively, a cation exchange resin and an anion exchange resin can be used.

【００２８】[0028]

【発明の効果】本発明の第１の発明に係る半導体集積回
路パッケージ装置は、樹脂パッケージを構成する樹脂が
イオン交換樹脂を含有しているので、半導体集積回路パ
ッケージ装置にとって好ましくない可動陽イオン及び／
または陰イオンの半導体集積回路チップへの侵入を阻止
することができるという効果を奏する。In the semiconductor integrated circuit package device according to the first aspect of the present invention, since the resin forming the resin package contains the ion exchange resin, the movable cations which are not preferable for the semiconductor integrated circuit package device are /
Alternatively, there is an effect that anion can be prevented from entering the semiconductor integrated circuit chip.

【００２９】本発明の第２の発明に係る半導体集積回路
パッケージ装置は、樹脂パッケージ上の所望の部位にイ
オン交換樹脂の樹脂膜あるいはイオン交換樹脂を添加し
た樹脂膜を積層した構成となっているので、半導体集積
回路パッケージ装置にとって好ましくない可動陽イオン
及び／または陰イオンの樹脂パッケージへの侵入を阻止
することができるという効果を奏する。A semiconductor integrated circuit package device according to a second aspect of the present invention has a structure in which a resin film of an ion exchange resin or a resin film to which an ion exchange resin is added is laminated at a desired portion on a resin package. Therefore, it is possible to prevent the movable cations and / or anions, which are not preferable for the semiconductor integrated circuit package device, from entering the resin package.

【００３０】本発明の第３の発明に係る半導体集積回路
パッケージ装置は、その構成部材である基板、半導体集
積回路チップ及びリード端子と樹脂パッケージの界面所
望の部位にイオン交換樹脂の樹脂膜あるいはイオン交換
樹脂を添加した樹脂膜を設置した構成となっているの
で、半導体集積回路パッケージ装置にとって好ましくな
い可動陽イオン及び／または陰イオンの半導体集積回路
チップへの侵入を阻止することができるという効果を奏
する。A semiconductor integrated circuit package device according to a third aspect of the present invention is an interface between a substrate, a semiconductor integrated circuit chip, a lead terminal, and a resin package, which are its constituent members, and a resin film of an ion exchange resin or an ion at a desired portion. Since the resin film added with the exchange resin is installed, it is possible to prevent the movable cations and / or anions, which are not preferable for the semiconductor integrated circuit package device, from entering the semiconductor integrated circuit chip. Play.

【００３１】本発明の第４の発明に係る半導体集積回路
パッケージ装置は、その構成部材である基板、半導体集
積回路チップ及びリード端子と樹脂パッケージの界面所
望の部位にイオン交換樹脂の樹脂膜あるいはイオン交換
樹脂を添加した樹脂膜を設置し、更に、前記樹脂パッケ
ージ上の所望の部位にイオン交換樹脂の樹脂膜あるいは
イオン交換樹脂を添加した樹脂膜を積層した構成となっ
ているので、半導体集積回路パッケージ装置にとって好
ましくない可動陽イオン及び／または陰イオンの半導体
集積回路チップへの侵入を阻止することができるという
効果を奏する。In the semiconductor integrated circuit package device according to the fourth aspect of the present invention, the interface between the substrate, the semiconductor integrated circuit chip, the lead terminals and the resin package, which are the constituent members of the device, is the resin film of the ion exchange resin or the ions at the desired site. Since a resin film containing an exchange resin is installed, and a resin film containing an ion exchange resin or a resin film containing an ion exchange resin is laminated on a desired portion of the resin package, the semiconductor integrated circuit is formed. It is possible to prevent mobile cations and / or anions, which are not preferable for the package device, from entering the semiconductor integrated circuit chip.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の１実施態様による半導体集積回路パッ
ケージ装置の概略を示す断面図である。FIG. 1 is a sectional view schematically showing a semiconductor integrated circuit package device according to an embodiment of the present invention.

【図２】本発明の他の実施態様による半導体集積回路パ
ッケージ装置の概略を示す断面図である。FIG. 2 is a sectional view schematically showing a semiconductor integrated circuit package device according to another embodiment of the present invention.

【図３】本発明の他の実施態様による半導体集積回路パ
ッケージ装置の概略を示す断面図である。FIG. 3 is a sectional view schematically showing a semiconductor integrated circuit package device according to another embodiment of the present invention.

【図４】本発明の他の実施態様による半導体集積回路パ
ッケージ装置の概略を示す断面図である。FIG. 4 is a sectional view schematically showing a semiconductor integrated circuit package device according to another embodiment of the present invention.

【図５】本発明の他の実施態様による半導体集積回路パ
ッケージ装置の概略を示す断面図である。FIG. 5 is a sectional view schematically showing a semiconductor integrated circuit package device according to another embodiment of the present invention.

【図６】本発明の他の実施態様による半導体集積回路パ
ッケージ装置の概略を示す断面図である。FIG. 6 is a sectional view schematically showing a semiconductor integrated circuit package device according to another embodiment of the present invention.

【図７】本発明の他の実施態様による半導体集積回路パ
ッケージ装置の概略を示す断面図である。FIG. 7 is a sectional view schematically showing a semiconductor integrated circuit package device according to another embodiment of the present invention.

【図８】従来例の半導体集積回路パッケージ装置の概略
を示す断面図である。FIG. 8 is a sectional view schematically showing a conventional semiconductor integrated circuit package device.

【符号の説明】[Explanation of symbols]

１、１ａ、１ｂ、１ｃ 樹脂パッケージ ２ 半導体集積回路チップ ３ 基板 ４ リード端子 ５ ワイヤ ６ 陽イオン交換樹脂 ７ 半導体集積回路パッケージ装置 １０ 半導体集積回路パッケージ装置 １１ 陰イオン交換樹脂 ２０ 半導体集積回路パッケージ装置 ２１ 両性イオン交換樹脂 ３０ 半導体集積回路パッケージ装置 ４０ 半導体集積回路パッケージ装置 ４１ 樹脂パッケージ ４６ 樹脂膜 ５０ 半導体集積回路パッケージ装置 ５１ 樹脂パッケージ ５６ 樹脂膜 ６０ 半導体集積回路パッケージ装置 ６１ 樹脂パッケージ ７０ 半導体集積回路パッケージ装置 ７１ 樹脂パッケージ 1, 1a, 1b, 1c Resin Package 2 Semiconductor Integrated Circuit Chip 3 Substrate 4 Lead Terminal 5 Wire 6 Cation Exchange Resin 7 Semiconductor Integrated Circuit Package Device 10 Semiconductor Integrated Circuit Package Device 11 Anion Exchange Resin 20 Semiconductor Integrated Circuit Package Device 21 Amphoteric ion exchange resin 30 Semiconductor integrated circuit packaging device 40 Semiconductor integrated circuit packaging device 41 Resin package 46 Resin film 50 Semiconductor integrated circuit packaging device 51 Resin package 56 Resin film 60 Semiconductor integrated circuit packaging device 61 Resin package 70 Semiconductor integrated circuit packaging device 71 Resin package

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/56 Ｒ 8617−4Ｍ 23/06 Ｚ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location H01L 21/56 R 8617-4M 23/06 Z

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 基板、基板上に設置された半導体集積回
路チップ、リード端子、該半導体集積回路チップと該リ
ード端子を結ぶワイヤ及びこれら構成部材を合成樹脂で
被覆することにより得られる樹脂パッケージを備えてな
る半導体集積回路パッケージ装置において、前記樹脂が
イオン交換樹脂を含有することを特徴とする半導体集積
回路パッケージ装置。1. A substrate, a semiconductor integrated circuit chip installed on the substrate, a lead terminal, a wire connecting the semiconductor integrated circuit chip and the lead terminal, and a resin package obtained by coating these constituent members with a synthetic resin. A semiconductor integrated circuit package device comprising the semiconductor integrated circuit package device, wherein the resin contains an ion exchange resin. 【請求項２】 基板、基板上に設置された半導体集積回
路チップ、リード端子、該半導体集積回路チップと該リ
ード端子を結ぶワイヤ及びこれら構成部材を合成樹脂で
被覆することにより得られる樹脂パッケージを備えてな
る半導体集積回路パッケージ装置において、前記樹脂パ
ッケージ上の所望の部位にイオン交換樹脂の樹脂膜ある
いはイオン交換樹脂を添加した樹脂膜を積層することを
特徴とする半導体集積回路パッケージ装置。2. A substrate, a semiconductor integrated circuit chip installed on the substrate, a lead terminal, a wire connecting the semiconductor integrated circuit chip and the lead terminal, and a resin package obtained by coating these constituent members with a synthetic resin. A semiconductor integrated circuit package device comprising: a resin film of an ion exchange resin or a resin film to which an ion exchange resin is added, laminated at a desired portion on the resin package. 【請求項３】 基板、基板上に設置された半導体集積回
路チップ、リード端子、該半導体集積回路チップと該リ
ード端子を結ぶワイヤ及びこれら構成部材を合成樹脂で
被覆することにより得られる樹脂パッケージを備えてな
る半導体集積回路パッケージ装置において、前記基板、
半導体集積回路チップ及びリード端子と樹脂パッケージ
の界面所望の部位にイオン交換樹脂の樹脂膜あるいはイ
オン交換樹脂を添加した樹脂膜を設置することを特徴と
する半導体集積回路パッケージ装置。3. A substrate, a semiconductor integrated circuit chip installed on the substrate, a lead terminal, a wire connecting the semiconductor integrated circuit chip and the lead terminal, and a resin package obtained by coating these constituent members with a synthetic resin. A semiconductor integrated circuit package device comprising: the substrate;
An interface between a semiconductor integrated circuit chip, a lead terminal, and a resin package. A resin film of an ion exchange resin or a resin film to which an ion exchange resin is added is installed at a desired site. 【請求項４】 基板、基板上に設置された半導体集積回
路チップ、リード端子、該半導体集積回路チップと該リ
ード端子を結ぶワイヤ及びこれら構成部材を合成樹脂で
被覆することにより得られる樹脂パッケージを備えてな
る半導体集積回路パッケージ装置において、前記基板、
半導体集積回路チップ及びリード端子と樹脂パッケージ
の界面所望の部位にイオン交換樹脂の樹脂膜あるいはイ
オン交換樹脂を添加した樹脂膜を設置し、更に、前記樹
脂パッケージ上の所望の部位にイオン交換樹脂の樹脂膜
あるいはイオン交換樹脂を添加した樹脂膜を積層するこ
とを特徴とする半導体集積回路パッケージ装置。4. A substrate, a semiconductor integrated circuit chip installed on the substrate, a lead terminal, a wire connecting the semiconductor integrated circuit chip and the lead terminal, and a resin package obtained by coating these constituent members with a synthetic resin. A semiconductor integrated circuit package device comprising: the substrate;
Interface between semiconductor integrated circuit chip and lead terminal and resin package A resin film of ion exchange resin or a resin film added with ion exchange resin is installed at a desired site, and further, an ion exchange resin film is provided at a desired site on the resin package. A semiconductor integrated circuit package device comprising: a resin film or a resin film containing an ion exchange resin laminated thereon.
JP4161119A 1992-06-19 1992-06-19 Semiconductor integrated circuit package device Pending JPH065740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4161119A JPH065740A (en) 1992-06-19 1992-06-19 Semiconductor integrated circuit package device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4161119A JPH065740A (en) 1992-06-19 1992-06-19 Semiconductor integrated circuit package device

Publications (1)

Publication Number Publication Date
JPH065740A true JPH065740A (en) 1994-01-14

Family

ID=15728966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4161119A Pending JPH065740A (en) 1992-06-19 1992-06-19 Semiconductor integrated circuit package device

Country Status (1)

Country Link
JP (1) JPH065740A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0703613A2 (en) * 1994-09-26 1996-03-27 Motorola, Inc. Protecting electronic components in acidic and basic environments
JP2002359326A (en) * 2001-06-01 2002-12-13 Fuji Electric Co Ltd Resin-sealed semiconductor device
CN110600430A (en) * 2018-06-13 2019-12-20 英飞凌科技股份有限公司 Ion manipulation method for semiconductor encapsulation materials and related apparatus and system

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0703613A2 (en) * 1994-09-26 1996-03-27 Motorola, Inc. Protecting electronic components in acidic and basic environments
EP0703613A3 (en) * 1994-09-26 1996-06-05 Motorola Inc Protecting electronic components in acidic and basic environments
US6030684A (en) * 1994-09-26 2000-02-29 Motorola, Inc. Protecting electronic components in acidic and basic environment
JP2002359326A (en) * 2001-06-01 2002-12-13 Fuji Electric Co Ltd Resin-sealed semiconductor device
CN110600430A (en) * 2018-06-13 2019-12-20 英飞凌科技股份有限公司 Ion manipulation method for semiconductor encapsulation materials and related apparatus and system
CN110600430B (en) * 2018-06-13 2023-06-09 英飞凌科技股份有限公司 Ion manipulation methods for semiconductor encapsulation materials and related devices and systems

Similar Documents

Publication Publication Date Title
US5252781A (en) Substrate member having electric lines and apertured insulating film
US7170150B2 (en) Lead frame for semiconductor package
Meakin Effects of cluster trajectories on cluster-cluster aggregation: A comparison of linear and Brownian trajectories in two-and three-dimensional simulations
US7855445B2 (en) Circuit device including rotated stacked die
US7102214B1 (en) Pre-molded leadframe
DE10134620A1 (en) Multi-axial inertial sensor system has sensor chips associated with sensor axes fixed on wafer plane on several rigid circuit substrates aligned according to sensor axis
JPH065740A (en) Semiconductor integrated circuit package device
DE102014107074A1 (en) Foil-covered open-cavity sensor housing
DE102013201931A1 (en) Laser component and method for its production
DE10259881A1 (en) Chip package and process for its manufacture
US7148529B2 (en) Semiconductor package
CN108666300A (en) Chip-packaging structure and its manufacturing method
Van der Vorst et al. Stereochemically active (5s) 2 lone pairs in the structures of α-InCl and β-InCl
DE10260005A1 (en) Chip package and process for its manufacture
DE112005000980T5 (en) Single-row connection field arrangement of an integrated circuit chip
DE102012109139A1 (en) Housing for an optoelectronic component, electronic assembly, method for producing housings and method for producing electronic assemblies
DE4408176A1 (en) Component encapsulation esp. integrated circuits
CN213071126U (en) Three-dimensional packaged miniaturized system module
KR100710133B1 (en) Printed Circuit Board for Semiconductive Package
JP3374840B2 (en) Resin sealing material for electronic component and electronic component molded using the same
JPH0651826B2 (en) Flame-retardant epoxy resin composition
CN115621216A (en) Display panel, preparation method thereof and wearable display device
DE3310654A1 (en) Process for sealing flat hybrid modules
DE60132037T2 (en) Molded packaging for integrated circuit
JPH0287656A (en) Hybrid integrated circuit