JPH0657382A - Stock for shadow mask - Google Patents

Stock for shadow mask

Info

Publication number
JPH0657382A
JPH0657382A JP23521392A JP23521392A JPH0657382A JP H0657382 A JPH0657382 A JP H0657382A JP 23521392 A JP23521392 A JP 23521392A JP 23521392 A JP23521392 A JP 23521392A JP H0657382 A JPH0657382 A JP H0657382A
Authority
JP
Japan
Prior art keywords
shadow mask
ray diffraction
diffraction intensity
electron beam
beam passage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23521392A
Other languages
Japanese (ja)
Inventor
Koichi Tejima
光一 手島
Yoshinori Fujimori
良経 藤森
Shinichi Nakamura
新一 中村
Masayuki Fukuda
正幸 福田
Michihiko Inaba
道彦 稲葉
Emiko Higashinakagaha
恵美子 東中川
Yasuhisa Otake
康久 大竹
Hidekazu Akiyoshi
英一 穐吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23521392A priority Critical patent/JPH0657382A/en
Publication of JPH0657382A publication Critical patent/JPH0657382A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To enable the piercing of electron beam passing pores having a uniform shape and pore size by specifying the X-ray diffraction intensity ratio of the crystalline planes in the surface of an alloy sheet constituted of prescribed ratios of Ni and Fe and forming its structure into a nonrecrystallized one. CONSTITUTION:This stock for a shadow mask is formed with an Fe-Ni alloy sheet constituting of, by weight, 20 to 48% Ni, and the balance Fe. Furthermore, the X-ray diffraction intensity ratio of the crystalline planes {111}, {200}, {220} and {311} is regulated to 20 or larger (in the case the X-ray diffraction intensity of the face in which the X-ray diffraction intensity is the highest among respective faces, is regulated to 100). Then, the surface is formed into structure near the non-oriented state, and is wholly formed into a nonrecrystallized structure.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【0001】[0001]

【0002】[0002]

【産業上の利用分野】本発明は、たとえばカラーテレビ
用受像管に使用されるシャドウマスクの構成に適するシ
ャドウマスク用素材に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a shadow mask material suitable for the construction of a shadow mask used, for example, in a picture tube for a color television.

【0003】[0003]

【0002】[0002]

【0004】[0004]

【従来の技術】カラーテレビ用受像管のシャドウマスク
は、微小な島状にそれぞれ区画された三色蛍光面に、所
要の電子ビームスポットを精度よく投影する機能が要求
される。つまり、シャドウマスクの電子ビーム通過孔の
相対位置、孔径および孔形状が、表示される画像の画質
に直接的な影響を及ぼすからである。こうした観点に立
って、前記シャドウマスクにおいては、電子ビーム通過
孔につき高い加工精度が要求される一方、散乱電子の発
生防止のため、電子ビーム通過孔の蛍光面に対向する面
側を半球状などに面取り加工するという特殊な加工を施
されているが、これらの加工精度が劣ると、いわゆるド
ーミングによる画質の低下を解消(回避ないし低減)し
得ない。
2. Description of the Related Art A shadow mask for a picture tube for a color television is required to have a function of accurately projecting a required electron beam spot on a three-color fluorescent screen divided into minute islands. That is, the relative position, hole diameter, and hole shape of the electron beam passage hole of the shadow mask have a direct influence on the image quality of the displayed image. From this point of view, in the shadow mask, while high processing accuracy is required for the electron beam passage hole, in order to prevent the generation of scattered electrons, the surface side of the electron beam passage hole that faces the fluorescent surface has a hemispherical shape or the like. Although a special processing such as chamfering is performed, if the processing accuracy is poor, the deterioration of image quality due to so-called doming cannot be eliminated (avoided or reduced).

【0005】[0005]

【0003】特に、近年高まっている“大型で画質の高
精細化”の要求、“高品位テレビ方式”の開発などの面
で、解像度の向上を図るため、前記シャドウマスクにつ
いては、微細な電子ビーム通過孔の穿設が要求されてい
る。こうした動向に対応して、たとえば36重量%Ni−Fe
を中心としたアンバー合金板の使用が試みられている。
すなわち、前記アンバー合金は熱膨脹係数が小さいた
め、シャドウマスクとしての使用において、電子の衝突
によりシャドウマスクが昇温しても、電子ビーム通過孔
の位置ズレを起し難いので、結果的に色ズレの防止を図
り易いからである。そして、前記シャドウマスクの形成
(構成)においては、いわゆるフォトエッチングによっ
て精細な電子ビーム通過孔を、ほぼ均一に形設(開孔)
するために、アンバー合金板面の結晶を揃える(方向性
を有する)ことが望まれている。
In particular, in order to improve the resolution in view of the demand for "large-sized and high-definition image quality" and the development of "high-definition television system" which have been increasing in recent years, in order to improve the resolution, the shadow mask has a fine electronic structure. It is required to form a beam passage hole. In response to these trends, for example, 36 wt% Ni-Fe
Attempts have been made to use an amber alloy plate centered on.
That is, since the amber alloy has a small coefficient of thermal expansion, in use as a shadow mask, even if the shadow mask is heated by the collision of electrons, it is difficult for the electron beam passage hole to be displaced, resulting in a color shift. This is because it is easy to prevent In the formation (configuration) of the shadow mask, so-called photo-etching is used to form fine electron beam passage holes substantially uniformly (open holes).
In order to achieve this, it is desired that the crystals on the surface of the amber alloy plate be aligned (have a directivity).

【0006】[0006]

【0004】ところで、前記アンバー合金系のシャドウ
マスク用素材は、次のようにして製造されている。すな
わち、原料素材の溶解、熱間鍛造、熱間圧延、冷間圧
延、中間焼鈍、調整圧延、再結晶組織化焼鈍などの工程
を経て製造されており、このようにして得られたアンバ
ー合金板は、少なくとも表面の結晶面が揃った(一様
な)状態を呈している。
By the way, the amber alloy shadow mask material is manufactured as follows. That is, it is manufactured through the steps of melting of raw material, hot forging, hot rolling, cold rolling, intermediate annealing, adjustment rolling, recrystallization structured annealing, etc., and the amber alloy sheet thus obtained Has a state in which at least the crystal planes of the surface are uniform (uniform).

【0007】[0007]

【0005】[0005]

【0008】[0008]

【発明が解決しようとする課題】しかしながら、大型で
画質が高精細なカラーテレビの開発・実用化に伴い、シ
ャドウマスクについても、さらなる高精度化、電子ビー
ム通過孔の精細ないし微細化などが要求されている。つ
まり、シャドウマスク用素材について、熱膨脹係数が小
さいことの他に、微細でバラツキのない所要の電子ビー
ム通過孔を容易に、かつ高精度に穿設し得ることも望ま
れる。しかし、前記従来のアンバー合金板にフォトエッ
チングで電子ビーム通過孔を穿設し形成したシャドウマ
スクには、エッチング孔の形状不良、およびいわゆる白
ムラが認められ、結果的に十分な画質などの向上を図り
得ないという不都合な問題がある。換言すると、たとえ
ば表面を (100)面に揃えたアンバー合金板を素材とし、
このアンバー合金板にフォトエッチング処理を施し、所
要の微細な電子ビーム通過孔を穿設した場合、それらの
穿設した電子ビーム通過孔の形状は、理想的な相似形を
していても、実際的には大きさに大小があり、またエッ
チング面の荒さに相違があって、前記白ムラなど全面的
な解消が成されていないのが現状である。
However, with the development and commercialization of a large-sized, high-definition color TV, the shadow mask is required to have higher precision and electron beam passage holes to be finer or finer. Has been done. That is, in the material for the shadow mask, in addition to having a small coefficient of thermal expansion, it is also desired that the required electron beam passage holes that are fine and have no variation can be easily and highly accurately formed. However, in the shadow mask formed by forming electron beam passage holes by photoetching in the conventional Amber alloy plate, defective shape of the etching holes and so-called white unevenness were observed, resulting in sufficient improvement of image quality and the like. There is an inconvenient problem in that In other words, for example, using an amber alloy plate whose surface is aligned with the (100) plane,
When this amber alloy plate is photoetched and the required fine electron beam passage holes are drilled, even if the shape of the drilled electron beam passage holes is an ideal similar shape, In reality, the size is large and small, and the roughness of the etching surface is different, so that the white unevenness is not completely eliminated.

【0009】[0009]

【0006】[0006]

【0010】本発明は上記事情に対処してなされたもの
で、孔径の形状だけでなく、側面も微細かつ平滑で孔径
もほぼ一様で微細な電子ビーム通過孔の穿設が可能あ
り、白ムラなどの認められないシャドウマスクを形成
(構成)し得るシャドウマスク用素材の提供を目的とす
る。
The present invention has been made in view of the above circumstances. In addition to the shape of the hole diameter, the side surface is fine and smooth, and the hole diameter is substantially uniform, and it is possible to form a fine electron beam passage hole. It is an object of the present invention to provide a shadow mask material capable of forming (configuring) a shadow mask in which unevenness is not recognized.

【0011】[0011]

【0007】[0007]

【0012】[0012]

【課題を解決するための手段】本発明に係るシャドウマ
スク用素材は、少なくとも重量比でNi20〜48%、不可避
的な不純物、および残部がFeから成るいわゆるアンバー
系と称されるFe−Ni系合金板であって、少なくとも表面
における結晶面{111 },{200 },{220 }および
{311 }のX線回折強度比が、それら各面のうち一番X
線回折強度の強い面のX線回折強度を 100としたときそ
れぞれ20以上であり、かつ未再結晶組織を成しているこ
とを特徴とする。
A material for a shadow mask according to the present invention is a Fe-Ni-based material called at least an amber-based material in which Ni is 20 to 48% by weight, inevitable impurities, and the balance is Fe. It is an alloy plate, and the X-ray diffraction intensity ratio of at least the crystal planes {111}, {200}, {220} and {311} on the surface is the most X-ray among those planes.
It is characterized in that when the X-ray diffraction intensity of the surface having a strong line diffraction intensity is 100, it is 20 or more, respectively, and a non-recrystallized structure is formed.

【0013】[0013]

【0008】そして、本発明は、前記アンバー合金板に
おける白ムラの問題が、α−Feの析出,結晶粒界のエッ
チング速度のバラツキ,および板表面における結晶の方
向性などに左右されるとの知見に基づくものである。す
なわち、α−Feはアンバー合金より耐蝕性が劣るため、
α−Feが局在している箇所に穿設される電子ビーム通過
孔の径が大きくなる。そして、このようなα−Feの析出
抑制、さらに未再結晶組織および結晶方向性の制御によ
って、前記電子ビーム通過孔の穿設に伴う白ムラなどの
問題が容易に、かつ確実に解消されることを確認し、本
発明を創出するに至ったものである。
According to the present invention, the problem of white unevenness in the amber alloy plate depends on the precipitation of α-Fe, the variation in the etching rate of crystal grain boundaries, the crystal orientation on the plate surface, and the like. It is based on knowledge. That is, since α-Fe has poorer corrosion resistance than Amber alloy,
The diameter of the electron beam passage hole formed at the location where α-Fe is localized increases. By suppressing the precipitation of α-Fe and controlling the non-recrystallized structure and the crystal orientation, problems such as white unevenness due to the formation of the electron beam passage hole are easily and surely solved. It was confirmed that the present invention was created.

【0014】[0014]

【0009】本発明に係るシャドウマスク用素材は、組
成的にアンバー系と称されるFe−Ni系合金であり、Fe−
Ni−Co系,Fe−Ni−Co−Cr系など(いずれも不可避的な
不純物を含む)が挙げられる。ここで、Niの組成比が20
重量%未満、逆に48重量%を超えても、熱膨脹係数が 7
×10-6/℃以下とならず、電子の衝突による昇温で電子
ビーム通過孔の位置ズレが起り、最終的に所要の機能を
果たし得ないからである。さらに、CoやCrを含有する場
合、Coの組成比は0.01〜10重量%、Crの組成比は0.01〜
7重量%の範囲内で、かつCr≦Coの関係にそれぞれ選択
される。その理由は、CoやCrの含有量が前記範囲外の場
合、いずれも熱膨脹係数が大きくなるためである。
The material for a shadow mask according to the present invention is an Fe-Ni alloy compositionally called an amber alloy,
Examples thereof include Ni-Co type and Fe-Ni-Co-Cr type (all of which include inevitable impurities). Here, the composition ratio of Ni is 20
Even if less than 48% by weight, the coefficient of thermal expansion is 7%
This is because the temperature does not fall below × 10 −6 / ° C. or less, the position of the electron beam passage hole shifts due to the temperature rise due to the collision of electrons, and the desired function cannot be finally achieved. Further, when containing Co or Cr, the composition ratio of Co is 0.01 to 10% by weight, and the composition ratio of Cr is 0.01 to 10% by weight.
It is selected within the range of 7% by weight and in the relationship of Cr ≦ Co. The reason is that when the content of Co or Cr is outside the above range, the coefficient of thermal expansion becomes large in both cases.

【0015】[0015]

【0010】また、前記アンバー合金系のNi成分の一部
(数%以内)を、たとえばTi,Al,Zr,Nb,Ta,Cr,Cuなどで
置換してもよく、さらに不可避的な不純物として、たと
えば重量比で Cを0.02%以下,Alを0.02%以下,S を0.
0!%以下,P を0.1 %以下,Moを0.02%以下, N2 を50
ppm以下, O2 を100 ppm 以下,脱酸剤としてのMnを0.
5 %以下,Siを0.1 %以下など含んでいてもよい。
Further, a part (within several%) of the Ni component of the amber alloy system may be replaced with, for example, Ti, Al, Zr, Nb, Ta, Cr, Cu, etc. , For example, C is 0.02% or less by weight, Al is 0.02% or less, and S is 0.
0!% Or less, P 0.1% or less, Mo 0.02% or less, N 2 50
ppm or less, O 2 100 ppm or less, Mn as a deoxidizer of 0.
It may contain 5% or less and Si of 0.1% or less.

【0016】[0016]

【0011】さらにまた、前記板表面における結晶面
{111 },{200 },{220 }および{311 }のX線回
折強度比においては、それら各面のうち一番X線回折強
度の強い面のX線回折強度を 100としたときそれぞれ20
以上であるが、少なくとも二つの結晶面の値は、それぞ
れ70以上であることが望ましい。加えて、本発明に係る
アンバー系合金板においては、未再結晶組織を成してい
ることが必要である。つまり、アニーリング(焼鈍)に
より、再度結晶組織化しておかないことで特徴付けられ
る。ここで、少なくとも表面において、結晶面{111
},{200 },{220 }および{311 }を、前記所定
の状態で(範囲に)存在させ、いわゆる結晶の方向性を
持たせない形態とし、かつ未再結晶組織のままとしてお
くのは、電子ビーム通過孔を高精度に穿設し得ないこと
が、それぞれ実験的に確認されたからである。
Furthermore, in the X-ray diffraction intensity ratio of the crystal planes {111}, {200}, {220} and {311} on the plate surface, the plane having the strongest X-ray diffraction intensity among the respective planes. 20 when the X-ray diffraction intensity of
As described above, the values of at least two crystal planes are preferably 70 or more. In addition, the amber alloy plate according to the present invention needs to have a non-recrystallized structure. In other words, it is characterized in that the crystal structure is not re-formed by annealing (annealing). Here, at least on the surface, the crystal plane {111
}, {200}, {220} and {311} are allowed to exist (in a range) in the above-mentioned predetermined state so as not to have so-called crystal orientation, and to remain unrecrystallized structure. This is because it has been experimentally confirmed that the electron beam passage hole cannot be formed with high precision.

【0017】[0017]

【0012】ここでエッチングを行うに当たり、素材面
の結晶が特定の結晶方位に配向していないことを必要と
する理由を述べる。無配向の結晶とは細かい粉末を押し
固めた状態であり、無配向の素材にエッチングを施す
と、エッチング方向は何等特定されず、全くランダムで
ある。そのため、巨視的に見ればエッチングは所望の方
向に均質に進行する。したがって、電子ビーム通過孔を
エッチング面に対し直角に形成することができ、孔の位
置,形状など均一化を図ることが可能となり、このと
き、粉末が細かい程効果があるからである。そして、本
発明に係る素材おいては、無配向素材の結晶粒が小さい
程、高精細な電子ビーム通過孔を開口し得る。 なお、
本発明に係るシャドウマスク用素材としてのアンバー系
合金板は、少なくとも板表面における結晶面{111 },
{200 },{220 }および{311 }のX線回折強度比
が、それら各面のうち一番X線回折強度の強い面のX線
回折強度を 100としたとき、それぞれ20以上であり、か
つ未再結晶組織を成すとともに、加工性を考慮すると硬
度(Hv) 230以下(もしくはエリクセン値が 7以上)であ
ることがさらに好ましい。
Here, the reason why it is necessary that the crystal on the surface of the material is not oriented in a specific crystal orientation in performing the etching will be described. A non-oriented crystal is a state in which a fine powder is pressed and solidified, and when a non-oriented material is etched, the etching direction is not specified at all and is completely random. Therefore, macroscopically, etching proceeds uniformly in a desired direction. Therefore, the electron beam passage holes can be formed at right angles to the etching surface, and the positions and shapes of the holes can be made uniform. At this time, the finer the powder, the more effective. Further, in the material according to the present invention, the smaller the crystal grains of the non-oriented material, the more finely the electron beam passage hole can be opened. In addition,
The amber alloy plate as the material for the shadow mask according to the present invention has at least a crystal plane {111},
The X-ray diffraction intensity ratios of {200}, {220} and {311} are 20 or more, respectively, when the X-ray diffraction intensity of the surface having the strongest X-ray diffraction intensity is 100. Further, it is more preferable that the hardness (Hv) is 230 or less (or the Erichsen value is 7 or more) in consideration of workability as well as forming an unrecrystallized structure.

【0018】[0018]

【0013】本発明に係るシャドウマスク用素材は、所
要の組成比に選択配合した原料(もしくは合金)を常套
の手段に準じた、溶融,鍛造,熱間圧延,冷間圧延など
の製造工程中で、 900℃以上の高温から急冷すること
と、少なくとも最終の熱処理工程で再結晶させないで、
軟化焼鈍を行うことによって製造し得る。
The material for a shadow mask according to the present invention is manufactured by a method such as melting, forging, hot rolling, cold rolling, etc. according to a conventional method using raw materials (or alloys) selectively blended in a required composition ratio. At that time, quenching from a high temperature of 900 ℃ or more, and at least without recrystallization in the final heat treatment step,
It can be manufactured by performing softening annealing.

【0019】[0019]

【0014】[0014]

【0020】[0020]

【作用】本発明に係るシャドウマスク用素材は、板の少
なくとも表面(層)がいわゆる無方向性(無指向性)に
近い状態を有するとともに、全体的に未再結晶組織を成
しているため、フォトエッチングにより、たとえば直径
mm程度の電子ビーム通過孔を穿設する場合、形状だけ
でなく、孔径もほぼ一様で微細な電子ビーム通過孔の穿
設が可能となり、結果的に白ムラなどの認められないシ
ャドウマスクを形成し得る。つまり、α−Feの析出抑
制、さらに未再結晶組織および結晶方向性が制御された
ことによって、電子ビーム通過孔をエッチング穿設した
場合も容易に、かつ確実に一様・微細な孔径の、電子ビ
ーム通過孔の穿設が可能となり、解像度の高い、高品位
のカラーテレビの実現に大きく寄与するといえる。
The material for a shadow mask according to the present invention has a state in which at least the surface (layer) of the plate is close to so-called non-directional (non-directional), and has a non-recrystallized structure as a whole. , By photo etching, for example diameter
When drilling electron beam passage holes of about mm, not only the shape but also the hole diameter is almost uniform, and it is possible to make fine electron beam passage holes. Can be formed. In other words, by suppressing the precipitation of α-Fe, and by controlling the non-recrystallized structure and the crystal orientation, even when an electron beam passage hole is formed by etching, it is possible to easily and reliably obtain a uniform and fine hole diameter. It can be said that it becomes possible to form electron beam passage holes, which will greatly contribute to the realization of a high-definition color television with high resolution.

【0021】[0021]

【0015】[0015]

【0022】[0022]

【実施例】以下本発明の実施例を説明する。EXAMPLES Examples of the present invention will be described below.

【0023】[0023]

【0016】実施例1、比較例1〜4 重量比で36%Ni、残部が実質的にFeから成るアンバー合
金を目標成分として溶解(溶融)し、複数個の 5トンイ
ンゴット(厚さ 150mm×幅 600mm×長さ10 m)を得た。
このインゴットを1200℃で 4時間加熱後、熱間圧延して
厚さ 3mm×幅600mm×長さ200mの寸法とした。その後、1
100℃で 4時間加熱処理し、冷間圧延を行い厚さ 0.7mm
の薄板にしてから、 900℃で連続中間焼鈍した。その後
さらに、冷間圧延を行い厚さ0.25mmの薄板にし、 620℃
で連続焼鈍してからスキンパスにより平坦化処理して未
再結晶組織のシャドウマスク素材を得た。なお、この製
造工程における冷間圧延工程における加工率は50%以上
である。
Example 1 and Comparative Examples 1 to 4 An amber alloy having a weight ratio of 36% Ni and the balance substantially consisting of Fe was melted (melted) as a target component, and a plurality of 5 ton ingots (thickness 150 mm × A width of 600 mm and a length of 10 m) was obtained.
After heating this ingot at 1200 ° C for 4 hours, it was hot-rolled to a thickness of 3 mm × width of 600 mm × length of 200 m. Then 1
Heat treatment at 100 ℃ for 4 hours, cold rolling and thickness 0.7mm
After being thinned, the sheet was annealed continuously at 900 ° C. After that, cold rolling is further performed to make a thin plate with a thickness of 0.25 mm, and 620 ° C.
Continuous annealing was performed and then flattening was performed by skin pass to obtain a shadow mask material having an unrecrystallized structure. The working ratio in the cold rolling process in this manufacturing process is 50% or more.

【0024】[0024]

【0017】上記で得たシャドウマスク素材(板)の全
面について、X線回折を行ったところ、図1に示すごと
く{111 },{200 },{220 }および{311 }の各X
線回折強度が顕著に出ており、{200 }のX線回折強度
を 100としたとき、各X線回折強度比は{111 }の場合
72,{220 }の場合98, {311 }の場合42であった。ま
た、前記シャドウマスク素材(板)についての結晶組織
は、図2すなわち顕微鏡写真(写真A)および電子顕微
鏡写真(写真B)にそれぞれ示すごとくであり、未再結
晶組織を含む微細な結晶で、転移密度も高くなってい
る。
The entire surface of the shadow mask material (plate) obtained above was subjected to X-ray diffraction, and as shown in FIG. 1, {111}, {200}, {220} and {311} Xs were obtained.
When the X-ray diffraction intensity is remarkable, and the X-ray diffraction intensity of {200} is 100, the X-ray diffraction intensity ratio is {111}.
In the case of 72, {220}, it was 98, and in the case of {311}, it was 42. Further, the crystal structure of the shadow mask material (plate) is as shown in FIG. 2, that is, a micrograph (Photo A) and an electron micrograph (Photo B), respectively, and is a fine crystal including an unrecrystallized structure, The dislocation density is also high.

【0025】[0025]

【0018】前記シャドウマスク素材(板)に、常套の
手段であるフォトエッチング法によって、設計孔径 1.7
× 0.7mmの長孔(大孔側)の電子ビーム通過孔を穿設・
開孔したところ、全面に亘って、孔径の形状および大き
さの揃った(一様な)電子ビーム通過孔が、穿設・開孔
され、かつ白ムラのないシャドウマスクが得られた。な
お、本発明に係るシャドウマスク素材(板)は、このよ
うにしてシャドウマスク化された後、再結晶処理してカ
ラーテレビに組み込まれる。
The shadow mask material (plate) has a designed hole diameter of 1.7 by a conventional photo-etching method.
× 0.7 mm long hole (large hole side) electron beam passage hole
When the holes were opened, electron beam passage holes (holes) of uniform shape and size were formed and opened over the entire surface, and a shadow mask without white unevenness was obtained. The shadow mask material (plate) according to the present invention is made into a shadow mask in this manner, and then recrystallized to be incorporated into a color television.

【0026】[0026]

【0019】比較のため、前記インゴットを1300℃で 4
時間加熱後、鍛造して厚さ 3mm×幅600mm×長さ l mの
寸法とした。その後、1100℃で 4時間加熱処理し、冷間
圧延を行い厚さ 0.7mmの薄板にしてから、1000℃で10分
間中間焼鈍した。その後さらに、冷間圧延を行い厚さ0.
25mmの薄板にし、 800℃で10分間焼鈍してからスキンパ
スにより平坦化処理して再結晶組織のシャドウマスク素
材を得た(比較例1)。 上記で得たシャドウマスク用
素材(板)の全面について、X線回折を行ったところ、
図2に示すごとく{111 },{200 }のX線回折強度が
が顕著に出、{220 }および{311 }のX線回折強度は
小さく、{111 }のX線回折強度を 100としたとき、各
X線回折強度比は{200 }の場合84,{220 }の場合1
2,{311}の場合 9であった。また、前記シャドウマス
ク素材(板)についての結晶組織は、図4すなわち顕微
鏡写真(写真a)および電子顕微鏡写真(写真b)にそ
れぞれ示すごとくであり、結晶は再結晶化しているた
め、本発明に係るシャドウマスク素材に比べて粗大化し
ており、転移密度は低くなっていた。
For comparison, the ingot was placed at 1300 ° C.
After heating for an hour, it was forged to have dimensions of thickness 3 mm × width 600 mm × length lm. After that, heat treatment was performed at 1100 ° C. for 4 hours, cold rolling was performed to form a thin plate having a thickness of 0.7 mm, and then intermediate annealing was performed at 1000 ° C. for 10 minutes. After that, further cold rolling is performed to a thickness of 0.
A 25 mm thin plate was annealed at 800 ° C. for 10 minutes and then flattened by a skin pass to obtain a shadow mask material having a recrystallized structure (Comparative Example 1). When X-ray diffraction was performed on the entire surface of the shadow mask material (plate) obtained above,
As shown in FIG. 2, the X-ray diffraction intensities of {111} and {200} are remarkable, the X-ray diffraction intensities of {220} and {311} are small, and the X-ray diffraction intensity of {111} is 100. When each X-ray diffraction intensity ratio is {200} 84, {220} 1
In the case of 2, {311}, it was 9. Further, the crystal structures of the shadow mask material (plate) are as shown in FIG. 4, that is, a micrograph (photograph a) and an electron micrograph (photograph b), respectively, and the crystal is recrystallized. It was coarser than the shadow mask material according to (1) and had a low dislocation density.

【0027】[0027]

【0020】さらに、前記比較例1において、製造工程
中の冷間圧延の加工率、および最終焼鈍温度を変えた他
は、同様にして2種の比較例(比較例2,比較例3)
を、さらにまた、前記比較例1の製造工程中における冷
間圧延の加工率は50%とした他は、同様にして1種類比
較例(比較例4)を製造した。これら比較例2〜4のX
線回折強度、および結晶組織の状態は、いずれも比較例
1の場合と同様であった。 これら各比較例のシャドウ
マスク用素材(板)に、常套の手段であるフォトエッチ
ング法によって、設計孔径 1.4× 0.7mmの長孔(大孔
側)の電子ビーム通過孔を穿設・開孔したところ、前記
実施例1の場合に比べてエッチング精度や白ムラの発生
などの点で劣ったシャドウマスクが得られた。
Further, in Comparative Example 1, two kinds of Comparative Examples (Comparative Example 2 and Comparative Example 3) were similarly prepared except that the working ratio of cold rolling during the manufacturing process and the final annealing temperature were changed.
Further, one kind of comparative example (Comparative Example 4) was manufactured in the same manner except that the cold rolling working ratio in the manufacturing process of Comparative Example 1 was set to 50%. X in Comparative Examples 2 to 4
The line diffraction intensity and the state of the crystal structure were the same as those in Comparative Example 1. In the shadow mask material (plate) of each of these comparative examples, a long hole (large hole side) electron beam passage hole having a design hole diameter of 1.4 × 0.7 mm was formed and opened by a conventional photoetching method. However, a shadow mask was obtained that was inferior to the case of Example 1 in etching accuracy and white spots.

【0028】[0028]

【0021】表1は、前記実施例1,比較例1〜4の各
シャドウマスク素材(板)について、板面における結晶
面{111 },{200 },{220 }および{311 }のX線
回折強度比、微細孔のエッチング性、白ムラ発生状態な
どをまとめて表示したものである。なお、表1におい
て、エッチング特性は電子ビーム通過孔の開孔寸法精度
が 2%以内の場合を優, 5%以内の場合を良とし、白ム
ラは目視での視認程度で評価し、結晶組織は断面の金属
組織写真でそれぞれ判定したものである。そして、表1
には参考例として、前記シャドウマスク用素材(板)の
組成分および組成比を成す金属粉末の試料(標準試料)
についてのX線回折強度比を併せて示す。
Table 1 shows the X-rays of the crystal planes {111}, {200}, {220} and {311} on the plate surface for each of the shadow mask materials (plates) of Example 1 and Comparative Examples 1 to 4 above. The diffraction intensity ratio, the etching property of fine holes, the state of white unevenness, etc. are collectively displayed. In Table 1, the etching characteristics are excellent when the hole dimension accuracy of the electron beam passage hole is within 2%, good when it is within 5%, and white unevenness is evaluated by visual inspection and the crystalline structure is evaluated. Are determined by the photograph of the metal structure of the cross section. And Table 1
As a reference example, a sample of metal powder (standard sample) that constitutes the composition and composition ratio of the material (plate) for the shadow mask
The X-ray diffraction intensity ratio of is also shown.

【0029】[0029]

【0022】[0022]

【0030】[0030]

【表1】実施例2〜4 前記実施例1の場合に準じた手段で、Fe−32%Ni− 5Co
合金(実施例2)、Fe−36%Ni− 0.2Co−0.02Cr合金
(実施例3)、Fe−32%Ni− 5Co− 0.2Cr合金(実施例
4)系の各シャドウマスク用素材(板)をそれぞれ製造
した。なお、これらの製造工程における最終焼鈍温度
は、実施例2の場合 640℃、実施例3の場合600℃、実
施例4の場合 620℃にそれぞれ設定した。
[Table 1] Examples 2 to 4 Fe-32% Ni-5Co was prepared by the same method as in Example 1 above.
Alloy (Example 2), Fe-36% Ni-0.2Co-0.02Cr alloy (Example 3), Fe-32% Ni-5Co-0.2Cr alloy (Example 4) -based shadow mask material (plate) ) Were produced respectively. The final annealing temperature in these manufacturing steps was set to 640 ° C in the case of Example 2, 600 ° C in the case of Example 3, and 620 ° C in the case of Example 4.

【0031】[0031]

【0023】これら3種の各シャドウマスク用素材
(板)について、実施例1の場合と同様に、板面におけ
る結晶面(111),(200),(220) および(311) のX線回折強
度比、微細孔のエッチング性、白ムラ発生状態、結晶組
織などを評価した結果を表2に示す。
For each of these three types of shadow mask materials (plates), as in the case of Example 1, X-ray diffraction of the crystal planes (111), (200), (220) and (311) on the plate surface was performed. Table 2 shows the results of evaluation of the strength ratio, the etching property of the fine pores, the white unevenness generation state, the crystal structure, and the like.

【0032】[0032]

【0024】[0024]

【0033】[0033]

【表2】 [Table 2]

【0034】[0034]

【0025】[0025]

【0035】[0035]

【発明の効果】上記説明したように、本発明に係るシャ
ドウマスク用素材は、少なくとも板面が無方向性に近
く、かつ結晶組織も未再結晶組織ないし状態を成してい
るため、微細孔径な電子ビーム通過孔をフォトエッチン
グにより穿設・開孔する場合、エッチングの方向性が大
幅に低減ないし解消されるので、一様な形状の孔径を成
し、かつ大きさの揃った孔径を容易に穿設・開孔するこ
とが可能となる。すなわち、高品位な画質など要求され
るカラーテレビの構成に適するような、白ムラのないエ
ッチング向きの良好な、信頼性の高いシャドウマスクを
得ることが可能となる。 なお、このシャドウマスク用
素材は、エッチング加工を行う用途、たとえばリードフ
レームなどとしても用いることが可能である。
As described above, in the shadow mask material according to the present invention, at least the plate surface is nearly non-directional and the crystal structure is also a non-recrystallized structure or state. When a large electron beam passage hole is formed and opened by photoetching, the directionality of the etching is greatly reduced or eliminated, so it is easy to achieve a uniform diameter and uniform size. It is possible to pierce and open the hole. That is, it is possible to obtain a highly reliable shadow mask that is suitable for etching of a color television that requires high-quality image quality, has no uneven whiteness, and is suitable for etching. The shadow mask material can also be used for applications such as etching, for example, as lead frames.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係るシャドウマスク用素材のX線回折
パターン例を示す特性図。
FIG. 1 is a characteristic diagram showing an example of an X-ray diffraction pattern of a shadow mask material according to the present invention.

【図2】本発明に係るシャドウマスク用素材の結晶組織
図で、(A) は顕微鏡写真、(B)は電子顕微鏡写真。
FIG. 2 is a crystal structure diagram of a material for a shadow mask according to the present invention, in which (A) is a micrograph and (B) is an electron micrograph.

【図3】従来のシャドウマスク用素材のX線回折パター
ン例を示す特性図。
FIG. 3 is a characteristic diagram showing an example of an X-ray diffraction pattern of a conventional shadow mask material.

【図4】従来のシャドウマスク用素材の結晶組織図で、
(a) は顕微鏡写真、(b) は電子顕微鏡写真。
FIG. 4 is a crystal structure diagram of a conventional shadow mask material,
(a) is a micrograph and (b) is an electron micrograph.

【符号の説明】[Explanation of symbols]

なし None

【表−1】 [Table-1]

───────────────────────────────────────────────────── フロントページの続き (72)発明者 福田 正幸 神奈川県川崎市幸区小向東芝町1番地 株 式会社東芝総合研究所内 (72)発明者 稲葉 道彦 神奈川県川崎市幸区小向東芝町1番地 株 式会社東芝総合研究所内 (72)発明者 東中川 恵美子 神奈川県川崎市幸区小向東芝町1番地 株 式会社東芝総合研究所内 (72)発明者 大竹 康久 埼玉県深谷市幡羅町1丁目9番2号 株式 会社東芝深谷電子工場内 (72)発明者 穐吉 英一 兵庫県姫路市余部区上余部50番地 株式会 社東芝姫路工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masayuki Fukuda 1 Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa Inside the Toshiba Research Institute, Inc. (72) Inventor Michihiko Inaba Komu-shi Toshiba-cho, Kawasaki-shi, Kanagawa No. 1 Incorporated company Toshiba Research Institute (72) Inventor Emiko Higashi Nakagawa 1 Komukai Toshiba-cho, Sachi-ku Kawasaki City Kanagawa Prefecture Incorporated Toshiba Research Institute (72) Inventor Yasuhisa Otake 1-chome Harara-cho, Fukaya-shi, Saitama No. 9 No. 2 Toshiba Fukaya Electronics Factory (72) Inventor Eiichi Akiyoshi 50 Kamamibe, Yobu Ward, Himeji City, Hyogo Prefecture Stock Company Toshiba Himeji Factory

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 少なくとも重量比でNi20〜48%、不可避
的な不純物、および残部がFeから成るFe−Ni系合金板で
あって、少なくとも表面における結晶面 {111 },
{200 },{220 }および{311 }のX線回折強度比
が、それら各面のうち一番X線回折強度の強い面のX線
回折強度を 100としたときそれぞれ20以上であり、かつ
未再結晶組織を成していることを特徴とするシャドウマ
スク用素材。
1. An Fe-Ni alloy plate comprising at least Ni by weight of 20 to 48%, unavoidable impurities, and the balance being Fe, the crystal plane of which is at least the surface {111},
The X-ray diffraction intensity ratios of {200}, {220}, and {311} are each 20 or more when the X-ray diffraction intensity of the surface with the highest X-ray diffraction intensity is 100, and A material for shadow masks, which is characterized by having an unrecrystallized structure.
JP23521392A 1992-08-11 1992-08-11 Stock for shadow mask Pending JPH0657382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23521392A JPH0657382A (en) 1992-08-11 1992-08-11 Stock for shadow mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23521392A JPH0657382A (en) 1992-08-11 1992-08-11 Stock for shadow mask

Publications (1)

Publication Number Publication Date
JPH0657382A true JPH0657382A (en) 1994-03-01

Family

ID=16982761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23521392A Pending JPH0657382A (en) 1992-08-11 1992-08-11 Stock for shadow mask

Country Status (1)

Country Link
JP (1) JPH0657382A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980066221A (en) * 1997-01-21 1998-10-15 이채우 Shadow mask material and its manufacturing method
KR20010050106A (en) * 1999-11-25 2001-06-15 사카모토 다까시 Fe-Ni based alloy for semi tension mask with excellent magnetic special and semi tension mask and collar braun tube using said alloy
US6547893B1 (en) * 1999-06-10 2003-04-15 Nippon Yakin Kogyo Co., Ltd. Fe-Ni based material for shadow mask
JP2014101543A (en) * 2012-11-20 2014-06-05 Jx Nippon Mining & Metals Corp Metal mask material and metal mask

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980066221A (en) * 1997-01-21 1998-10-15 이채우 Shadow mask material and its manufacturing method
US6547893B1 (en) * 1999-06-10 2003-04-15 Nippon Yakin Kogyo Co., Ltd. Fe-Ni based material for shadow mask
KR20010050106A (en) * 1999-11-25 2001-06-15 사카모토 다까시 Fe-Ni based alloy for semi tension mask with excellent magnetic special and semi tension mask and collar braun tube using said alloy
JP2014101543A (en) * 2012-11-20 2014-06-05 Jx Nippon Mining & Metals Corp Metal mask material and metal mask

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