JPH065724A - Vessel for semiconductor device - Google Patents
Vessel for semiconductor deviceInfo
- Publication number
- JPH065724A JPH065724A JP16235692A JP16235692A JPH065724A JP H065724 A JPH065724 A JP H065724A JP 16235692 A JP16235692 A JP 16235692A JP 16235692 A JP16235692 A JP 16235692A JP H065724 A JPH065724 A JP H065724A
- Authority
- JP
- Japan
- Prior art keywords
- side wall
- ceramic
- semiconductor device
- metal
- sidewall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置用容器に関
し、特に気密封止用の金属で構成された半導体装置用容
器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device container, and more particularly to a semiconductor device container made of a metal for hermetically sealing.
【０００２】[0002]
【従来の技術】従来の半導体素子を気密封止する半導体
装置用の容器は図３（ａ）及び（ｂ）にそれぞれ平面図
及び正面図を示すように、金属材を加工した金属側壁１
で囲まれるキャビティ２を構成し、このキャビティ内に
半導体素子を搭載するようにしている。この金属側壁１
の外側には放熱板３が一体に設けられる。又、金属側壁
１の一部は切り欠かれてい切欠部４が設けられこの切欠
部にセラミック側壁５が配置され、このセラミック側壁
５の周囲の全体においてＡｇロー材７により金属側壁１
に一体化されている。このセラミック側壁５に外部導出
リード６がキャビティ２の内外にわたって貫通支持され
ており、キャビティ２内に搭載される半導体素子に電気
接続される。2. Description of the Related Art A conventional container for a semiconductor device for hermetically sealing a semiconductor element has a metal side wall 1 formed by processing a metal material, as shown in a plan view and a front view in FIGS. 3 (a) and 3 (b), respectively.
A cavity 2 surrounded by is formed, and a semiconductor element is mounted in this cavity. This metal side wall 1
A heat dissipation plate 3 is integrally provided on the outer side of the. Further, a part of the metal side wall 1 is notched so that a notch portion 4 is provided, and a ceramic side wall 5 is arranged in this notch portion.
Is integrated into. External lead-outs 6 are penetratingly supported on the ceramic side wall 5 inside and outside the cavity 2, and are electrically connected to a semiconductor element mounted in the cavity 2.
【０００３】[0003]
【発明が解決しようとする課題】このような従来の半導
体装置用容器では、セラミック側壁５の周囲全面におい
て金属側壁５の熱膨張率が相違することから、半導体素
子の搭載時における金属側壁１の熱収縮によりセラミッ
クス側壁５に熱応力が加わり、セラミックス側壁５にク
ラックが生じるという問題がある。又、電気特性検査時
において金属側壁１及び放熱板３を検査治具で固定した
場合に、これらを構成する金属部材に加わる圧力により
セラミックス側壁５に応力が加わって同様にクラックが
生じるという問題がある。In such a conventional semiconductor device container, the coefficient of thermal expansion of the metal side wall 5 is different over the entire peripheral surface of the ceramic side wall 5, so that the metal side wall 1 is mounted when the semiconductor element is mounted. There is a problem that a thermal stress is applied to the ceramic side wall 5 due to the thermal contraction and a crack is generated on the ceramic side wall 5. In addition, when the metal side wall 1 and the heat sink 3 are fixed by an inspection jig during the electrical characteristic inspection, stress is applied to the ceramic side wall 5 due to the pressure applied to the metal members forming these, and similarly cracks occur. is there.
【０００４】本発明の目的はセラミックス側壁のクラッ
クを防止した半導体装置用容器を提供することにある。An object of the present invention is to provide a container for a semiconductor device in which a side wall of a ceramic is prevented from cracking.
【０００５】[0005]
【課題を解決するための手段】本発明の半導体装置用容
器は、セラミックス側壁を外部導出リード取付部と内部
結線部の一方又は両方がくぼんだ直方体とした構造とし
ている。本発明によれば、セラミックス側壁の金属側壁
に接触している側の面積が多くなり、金属側壁に生じた
応力を分散させることができ、セラミックス側壁のセラ
ミックのクラックが防止される。The container for a semiconductor device of the present invention has a structure in which the side wall of the ceramic is a rectangular parallelepiped in which one or both of the external lead-out lead mounting portion and the internal connecting portion are recessed. According to the present invention, the area of the side wall of the ceramic which is in contact with the metal side wall is increased, the stress generated in the metal side wall can be dispersed, and the crack of the ceramic on the side wall of the ceramic is prevented.
【０００６】[0006]
【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の半導体装置用容器の第１の実施例を
示し、同図（ａ）は平面図，同図（ｂ）は正面図であ
る。これまでと同様に金属を加工した側壁１を形成し、
内部に半導体素子を搭載するためのキャビティ２を形成
する。金属側壁１の外側には放熱板３が一体形成され
る。又、金属側壁の内面、内底面等はＭｏ−Ｍｎ等での
メタライズが施されている。更に、金属側壁１の一部は
切り欠かれて切欠部４が設けられ、ここにセラミックス
側壁５が配設され、外部導出リード６を支持している。
このセラミックス側壁５は金属側壁１にＡｇロー材７で
接続されている。このセラミックス側壁５は、リード導
出部の上の面の断面はＨ形をしている。このように本実
施例では図３の従来のものに比べてＡｇロー付けされて
いる側面が広なっているので半導体搭載時の熱応力が広
い面に分散されるのでクラックが生じずらい。The present invention will be described below with reference to the drawings. 1A and 1B show a first embodiment of a container for a semiconductor device of the present invention. FIG. 1A is a plan view and FIG. 1B is a front view. Form the side wall 1 made of metal as before,
A cavity 2 for mounting a semiconductor element is formed inside. A heat dissipation plate 3 is integrally formed on the outer side of the metal side wall 1. Further, the inner surface, inner bottom surface, etc. of the metal side wall are metallized with Mo-Mn or the like. Further, a part of the metal side wall 1 is cut out to form a cutout portion 4, and a ceramic side wall 5 is arranged therein to support the external lead-out 6.
The ceramic side wall 5 is connected to the metal side wall 1 by an Ag brazing material 7. The ceramic side wall 5 has an H-shaped cross section on the surface above the lead-out portion. As described above, in this embodiment, since the side surface to which Ag brazing is applied is wider than that of the conventional one shown in FIG. 3, the thermal stress at the time of mounting the semiconductor is dispersed to the wider surface, and thus cracks are less likely to occur.
【０００７】次に、本発明の第２の実施例について図２
を参照して説明する。図２（ａ）は平面図、（ｂ）は正
面図である。なお、図１と同一部分には同一符号を付し
てある。この実施例では、セラミックス側壁５は、リー
ド導出部の上の面の断面はキャビティの外に向って凹状
になっている。この実施例でもＡｇロー付けされる側面
が大きいので耐クラック性が向上する。Next, a second embodiment of the present invention will be described with reference to FIG.
Will be described with reference to. 2A is a plan view and FIG. 2B is a front view. The same parts as those in FIG. 1 are designated by the same reference numerals. In this embodiment, the ceramic side wall 5 has a concave cross-section on the surface above the lead lead-out portion toward the outside of the cavity. Also in this embodiment, since the side surface to which Ag brazing is applied is large, the crack resistance is improved.
【０００８】[0008]
【発明の効果】以上説明したように本発明によれば、セ
ラミック側壁の金属側壁とＡｇロー付けされている側面
は、従来の容器にくらべて１０〜３０％広くなるので、
半導体素子搭載時に熱応力あるいは電気特性検査時の治
具固定時の機械的応力が側壁１に生じても応力が分散さ
れるのでセラミック側壁５の耐クラック性は向上する。
図に、第１の実施例の半導体装置用容器によれば、ある
条件下での半導体素子搭載時のセラミック側壁のクラッ
クは従来容器の３個／２０個発生に対し、０個／２０個
と良好な結果を得ている。As described above, according to the present invention, the side wall of the side wall of the ceramic side wall and Ag brazed is 10 to 30% wider than the conventional container.
Even if the side wall 1 is subjected to thermal stress when mounting a semiconductor element or mechanical stress at the time of fixing a jig during electrical characteristic inspection, the stress is dispersed, so that the crack resistance of the ceramic side wall 5 improves.
In the figure, according to the semiconductor device container of the first embodiment, the number of cracks on the ceramic side wall when mounting a semiconductor element under certain conditions is 0/20, compared with 3/20 in the conventional container. Good results have been obtained.
【図１】本発明の第１の実施例を示す図で、（ａ）は平
面図、（ｂ）は正面図である。FIG. 1 is a diagram showing a first embodiment of the present invention, in which (a) is a plan view and (b) is a front view.
【図２】本発明の第２の実施例を示す図で、（ａ）は平
面図、（ｂ）は正面図である。FIG. 2 is a diagram showing a second embodiment of the present invention, in which (a) is a plan view and (b) is a front view.
【図３】従来の半導体装置用容器を示す図で、（ａ）は
平面図、（ｂ）は正面図である。3A and 3B are diagrams showing a conventional semiconductor device container, in which FIG. 3A is a plan view and FIG. 3B is a front view.
１ 金属側壁 ２ キャビティ ３ 放熱板 ４ 切欠部 ５ セラミックス側壁 ６ 外部導出リード ７ Ａｇロー材 1 Metal Side Wall 2 Cavity 3 Heat Sink 4 Notch 5 Ceramic Side Wall 6 External Lead 7 Ag Brazing Material
Claims (1)
収納するキャビティを有し、この金属側壁の一部に設け
た切欠部をセラミックス側壁で構成して成る半導体装置
用容器において、前記セラミックスの形状が外部導出用
リード取付け部と内部結線部のどちらか又は両方がくぼ
んだ直方体であることを特徴とする半導体装置用容器。1. A container for a semiconductor device, comprising a cavity surrounded by a metal side wall for accommodating a semiconductor element therein, and a notch formed in a part of the metal side wall is constituted by a ceramic side wall. Is a rectangular parallelepiped in which either or both of the lead-out portion for external lead-out and the internal wire connecting portion are recessed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4162356A JP2773549B2 (en) | 1992-06-22 | 1992-06-22 | Container for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4162356A JP2773549B2 (en) | 1992-06-22 | 1992-06-22 | Container for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH065724A true JPH065724A (en) | 1994-01-14 |
| JP2773549B2 JP2773549B2 (en) | 1998-07-09 |
Family
ID=15753012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4162356A Expired - Lifetime JP2773549B2 (en) | 1992-06-22 | 1992-06-22 | Container for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2773549B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4961121A (en) * | 1987-09-22 | 1990-10-02 | International Business Machines Corporation | Air bearing slider rail design with trumpet-shaped rail portion |
| WO2007039614A1 (en) | 2005-10-03 | 2007-04-12 | Mettler-Toledo Ag | Dosing device for powdery or pasty substances |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04287950A (en) * | 1991-02-28 | 1992-10-13 | Mitsubishi Electric Corp | Package for semiconductor device |
| JPH05183065A (en) * | 1991-12-27 | 1993-07-23 | Shinko Electric Ind Co Ltd | Metal package for semiconductor |
-
1992
- 1992-06-22 JP JP4162356A patent/JP2773549B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04287950A (en) * | 1991-02-28 | 1992-10-13 | Mitsubishi Electric Corp | Package for semiconductor device |
| JPH05183065A (en) * | 1991-12-27 | 1993-07-23 | Shinko Electric Ind Co Ltd | Metal package for semiconductor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4961121A (en) * | 1987-09-22 | 1990-10-02 | International Business Machines Corporation | Air bearing slider rail design with trumpet-shaped rail portion |
| WO2007039614A1 (en) | 2005-10-03 | 2007-04-12 | Mettler-Toledo Ag | Dosing device for powdery or pasty substances |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2773549B2 (en) | 1998-07-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19980324 |