JPH0126540B2 - - Google Patents
Info
- Publication number
- JPH0126540B2 JPH0126540B2 JP58088433A JP8843383A JPH0126540B2 JP H0126540 B2 JPH0126540 B2 JP H0126540B2 JP 58088433 A JP58088433 A JP 58088433A JP 8843383 A JP8843383 A JP 8843383A JP H0126540 B2 JPH0126540 B2 JP H0126540B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- metal body
- heat dissipation
- semiconductor element
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 73
- 239000002184 metal Substances 0.000 claims description 73
- 239000004065 semiconductor Substances 0.000 claims description 55
- 230000017525 heat dissipation Effects 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000005336 cracking Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置、特に高出力半導体装置の
放熱構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a heat dissipation structure for a semiconductor device, particularly a high-power semiconductor device.
一般に半導体装置、特に高出力の半導体装置に
於ては、高出力を得る為に半導体装置稼動中に半
導体素子より発生する熱を充分に放散させること
が重要である。この為、従来の高出力半導体装置
は、高熱伝導性の例えば銅の如き金属よりなる放
熱用ベースに直接半導体素子をろう材、例えば金
―シリコン、鉛―錫―銀等の合金材で固着してい
た。このような従来の半導体装置に於いては、放
熱用ベースと半導体素子との熱膨張係数差に起因
して生じる応力により、機械的強度が弱い方の半
導体素子に割れた生じたり、素子が放熱用ベース
から剥離するといつた事故がしばしば発生してい
た。特に、高出力化が進み、半導体素子チツプ自
体が大きくなるにつれ、こうした事故の発生が顕
著になつてきた。そこでこうした事故を防止する
ことを目的として、放熱用ベースに該放熱用ベー
スに比し熱膨張係数の小さい例えば、タングステ
ン、モリブデン等の金属よりなる金属支持体を固
定することにより放熱用ベースと半導体素子の熱
膨張係数差に起因して生じる応力を緩和した半導
体装置が提案されている。 In general, in semiconductor devices, particularly high-output semiconductor devices, it is important to sufficiently dissipate heat generated by semiconductor elements during operation of the semiconductor device in order to obtain high output. For this reason, conventional high-output semiconductor devices are made by directly bonding semiconductor elements to a heat dissipation base made of a metal with high thermal conductivity, such as copper, using a brazing material, such as an alloy material such as gold-silicon or lead-tin-silver. was. In such conventional semiconductor devices, stress caused by the difference in thermal expansion coefficient between the heat dissipation base and the semiconductor element causes cracks in the semiconductor element with weaker mechanical strength, or the element dissipates heat. Accidents such as peeling off from the base often occurred. In particular, as output increases and semiconductor chip chips themselves become larger, the occurrence of such accidents has become more prominent. Therefore, in order to prevent such accidents, a metal support made of a metal such as tungsten or molybdenum, which has a smaller coefficient of thermal expansion than the heat dissipation base, is fixed to the heat dissipation base. Semiconductor devices have been proposed in which stress caused by differences in thermal expansion coefficients of elements is alleviated.
しかし、このような金属支持体を有する従来の
半導体装置に於ては半導体素子より発生した熱
は、放熱用ベースに比して熱伝導性に劣る金属支
持体を介し放熱用ベースより放熱されるため、金
属支持体部で放熱が阻害されるという欠点を有し
ている。また、金属支持体としてモリブデン、タ
ングステン等の高価な材料を使用しなければなら
ない為、半導体装置を安価に提供できないといつ
た欠点を有している。 However, in conventional semiconductor devices having such a metal support, the heat generated by the semiconductor element is radiated from the heat radiation base through the metal support, which has lower thermal conductivity than the heat radiation base. Therefore, it has the disadvantage that heat dissipation is inhibited by the metal support portion. Furthermore, since expensive materials such as molybdenum and tungsten must be used as the metal support, semiconductor devices cannot be provided at low cost.
本発明は放熱性に優れ、かつチツプ割れのない
安価な半導体装置を提供することを目的とするも
のである。 An object of the present invention is to provide an inexpensive semiconductor device that has excellent heat dissipation properties and is free from chip cracking.
本発明は金属支持体として高熱伝導性を有する
例えば銅の如き第１の金属体と、低膨張係数を有
する例えば鉄―ニツケル、鉄―コバルト―ニツケ
ル等の合金の如き第２の金属体とでこれを構成
し、第１の金属体の側面に第２の金属体が取付け
られた構造とし、半導体素子を該第１の金属体の
上部端面に固定したことを特徴とする。 The present invention uses a first metal body such as copper having high thermal conductivity as a metal support, and a second metal body such as an alloy such as iron-nickel or iron-cobalt-nickel having a low coefficient of expansion. This structure is characterized in that the second metal body is attached to the side surface of the first metal body, and the semiconductor element is fixed to the upper end surface of the first metal body.
このような本発明の半導体装置に於ては、半導
体素子は高熱伝導性の金属支持体の第１の金属体
上に固定されているので、半導体装置稼動中に半
導体素子より発生する熱は高熱伝導性の第１の金
属体を介し直接放熱用ベースより放散できる為、
充分な熱放散を行なうことができる。また、半導
体素子は、熱膨張係数の大きい第１の金属体上に
固定されているが、第１の金属体の側面に取付け
られた熱膨張係数の小さい第２の金属体が、第１
の金属体の熱膨張を抑制するよう作用する。この
為、半導体素子と第１の金属体との熱膨張係数差
により生じ、半導体素子へ加わる応力を緩和する
ことができ、半導体素子の割れや金属体からの剥
離を防止することができる。また金属支持体は
銅、鉄―ニツケル合金の如き安価な材料の組合せ
で構成できるという利点も有している。 In such a semiconductor device of the present invention, since the semiconductor element is fixed on the first metal body of the highly thermally conductive metal support, the heat generated by the semiconductor element during operation of the semiconductor device is reduced to high heat. Because heat can be radiated directly from the heat dissipation base via the conductive first metal body,
Sufficient heat dissipation can be achieved. Further, the semiconductor element is fixed on a first metal body having a large coefficient of thermal expansion, and a second metal body having a low coefficient of thermal expansion attached to a side surface of the first metal body is attached to the first metal body having a large coefficient of thermal expansion.
It acts to suppress the thermal expansion of the metal body. For this reason, it is possible to alleviate the stress applied to the semiconductor element caused by the difference in thermal expansion coefficient between the semiconductor element and the first metal body, and it is possible to prevent the semiconductor element from cracking or peeling from the metal body. The metal support also has the advantage that it can be constructed from a combination of inexpensive materials such as copper and iron-nickel alloys.
このように本発明の半導体装置によれば、放熱
性に優れ、半導体素子の割れ、支持体からの剥離
といつた欠陥を除去した、半導体装置を安価にか
つ容易に提供することが可能である。 As described above, according to the semiconductor device of the present invention, it is possible to inexpensively and easily provide a semiconductor device that has excellent heat dissipation properties and eliminates defects such as cracking of the semiconductor element and peeling from the support. .
次に本発明を図面を用いて更に詳細に説明す
る。第１図は従来の半導体装置を示す縦断面図で
あり、第２図は本発明の一実施例を示す縦断面図
である。第３図ａ，ｂは本発明に係る金属支持体
の製法例を示す概要図である。 Next, the present invention will be explained in more detail using the drawings. FIG. 1 is a longitudinal sectional view showing a conventional semiconductor device, and FIG. 2 is a longitudinal sectional view showing an embodiment of the present invention. FIGS. 3a and 3b are schematic diagrams showing an example of a method for manufacturing a metal support according to the present invention.
第１図（第２図）に於いて、１０１，２０１は
例えば銅の如き高熱伝導性を有する金属よりなる
放熱用ベースで、放熱用ベース１０１，２０１に
は例えばアルミナ等の絶縁物よりなり中央部に開
孔部１０２，２０２を有する壁部材１０３，２０
３が取付けられている。半導体素子１０４，２０
４を搭載する為の金属支持体１０５，２０５は、
前記壁部材１０３，２０３の開孔部１０２，２０
２に於て、前記放熱用ベース１０１，２０１に固
定されている。半導体素子１０１，２０１は、金
属支持体１０５，２０５に固定され、その各電極
は壁部材１０３，２０３に形成された金属層と金
属細線１０８，２０８で接続され、金属層を介し
て外部導出リード１０９，２０９と電気的に接続
されている。 In FIG. 1 (FIG. 2), reference numerals 101 and 201 are heat dissipation bases made of a metal with high thermal conductivity such as copper, and the heat dissipation bases 101 and 201 are made of an insulating material such as alumina. Wall members 103, 20 having openings 102, 202 in the
3 is installed. Semiconductor elements 104, 20
The metal supports 105, 205 for mounting 4 are
Openings 102, 20 of the wall members 103, 203
2, it is fixed to the heat dissipation bases 101, 201. Semiconductor elements 101, 201 are fixed to metal supports 105, 205, and their respective electrodes are connected to metal layers formed on wall members 103, 203 with thin metal wires 108, 208, and are connected to external leads through the metal layers. It is electrically connected to 109 and 209.
第１図に示す従来の半導体装置に於ては、前記
半導体素子１０４を搭載する為の金属支持体１０
５には、半導体素子１０４との熱膨張係数差に起
因して生じる半導体素子１０４の割れ、金属支持
体１０５からの剥離を防止する為、放熱用ベース
１０１に比して、熱膨張係数の小さい例えば、タ
ングステン、モリブデン等の金属が使用されてい
る。 In the conventional semiconductor device shown in FIG. 1, a metal support 10 for mounting the semiconductor element 104 is used.
5 has a lower coefficient of thermal expansion than that of the heat dissipation base 101 in order to prevent the semiconductor element 104 from cracking and peeling from the metal support 105 due to the difference in thermal expansion coefficient with the semiconductor element 104. For example, metals such as tungsten and molybdenum are used.
このような従来の半導体装置に於ては半導体素
子１０４より発生した熱は、放熱用ベース１０１
に比して熱伝導性に劣る金属支持体１０５を介し
て放熱用ベース１０１より放散されるため、金属
支持体１０５で放熱が粗害されるという欠点を有
している。また金属支持体１０５にタングステ
ン、モリブデン等の高価な材料を使用しなければ
ならない為、半導体装置を安価に提供できないと
いつた欠点を有している。 In such a conventional semiconductor device, heat generated from the semiconductor element 104 is transferred to the heat dissipation base 101.
Since the heat is radiated from the heat dissipation base 101 via the metal support 105, which has inferior thermal conductivity compared to the metal support 105, it has the disadvantage that heat dissipation is impaired by the metal support 105. Further, since expensive materials such as tungsten and molybdenum must be used for the metal support 105, there is a drawback that semiconductor devices cannot be provided at low cost.
これに対して、第２図の実施例に於ては、半導
体素子２０４を固定する為の金属支持体２０５
は、高熱伝導性を有する例えば銅、銅合金等より
なる第１の金属体２０６と、第１の金属体２０６
の側面に、低膨張係数を有する例えば鉄―ニツケ
ル、鉄―コバルト―ニツケル等の合金よりなる第
２の金属体２０７を取付けた構造を有し、半導体
素子２０４は第１の金属体２０６の上部端面に固
定されている。 On the other hand, in the embodiment shown in FIG. 2, the metal support 205 for fixing the semiconductor element 204 is
The first metal body 206 is made of, for example, copper, copper alloy, etc. and has high thermal conductivity;
has a structure in which a second metal body 207 made of an alloy having a low coefficient of expansion, such as iron-nickel or iron-cobalt-nickel, is attached to the side surface of the first metal body 206. Fixed to the end face.
このような本発明の半導体装置に於ては、半導
体素子２０４より発生する熱は高熱伝導性を有す
る第１の金属体２０６を介し放熱用ベース２０１
より放散される為、充分な熱放散が可能である。
また半導体素子２０４は熱膨張係数の大きい第１
の金属体２０６上に固定されているが、第１の金
属体２０６の側面に取付けられた熱膨張係数の小
さい第２の金属体２０７が第１の金属体２０６の
熱膨張を抑制するよう作用する。この為、半導体
素子２０４と第１の金属体２０６との熱膨張係数
差により生じる応力を緩和することができ、半導
体素子２０４の割れ、第１の金属体２０６からの
剥離を防止することができる。また、金属支持体
２０５は銅、鉄―ニツケル合金の如き安価な材料
で構成でき、第３図ａに示すように例えば銅の如
き高熱伝導性の金属板２０６の両面に例えば鉄―
ニツケル合金の如き低膨張係数を有する金属板２
０７をクラツドした条を、図の斜線で示すように
切断することによつて容易に得ることができる。
また第３図ｂに示すように、例えば銅の如き高熱
伝導性の金属線２０６外周に、例えば鉄―ニツケ
ル合金の如き低膨張係数を有する金属２０７をク
ラツドした線を、図の斜線で示すように軸方向に
垂直に切断することによつても容易に得ることが
できる。 In such a semiconductor device of the present invention, heat generated from the semiconductor element 204 is transferred to the heat dissipation base 201 via the first metal body 206 having high thermal conductivity.
Since it is dissipated more, sufficient heat dissipation is possible.
Further, the semiconductor element 204 is a first semiconductor element having a large coefficient of thermal expansion.
A second metal body 207 with a small coefficient of thermal expansion attached to the side surface of the first metal body 206 acts to suppress the thermal expansion of the first metal body 206. do. Therefore, the stress caused by the difference in thermal expansion coefficient between the semiconductor element 204 and the first metal body 206 can be alleviated, and cracking of the semiconductor element 204 and separation from the first metal body 206 can be prevented. . The metal support 205 can be made of an inexpensive material such as copper or an iron-nickel alloy, and as shown in FIG.
Metal plate 2 having a low coefficient of expansion such as nickel alloy
It can be easily obtained by cutting a clad strip of 07 as shown by diagonal lines in the figure.
Further, as shown in FIG. 3b, a wire 206 having high thermal conductivity such as copper is clad with a metal 207 having a low coefficient of expansion such as iron-nickel alloy, as indicated by diagonal lines in the figure. It can also be easily obtained by cutting perpendicular to the axial direction.
このように本発明の半導体装置によれば、放熱
性に優れ半導体素子２０４の割れ、金属支持体２
０５からの剥離といつた欠陥を除去した半導体装
置を安価にかつ容易に提供することができる。 As described above, the semiconductor device of the present invention has excellent heat dissipation properties and prevents cracks in the semiconductor element 204 and metal support 2.
A semiconductor device in which defects such as peeling from 05 are removed can be provided at low cost and easily.
以上、本発明の効果につき図面を参照して説明
したが、本発明の効果は金属支持体として第３図
ａに示す第１の金属体の２つの側面に第２の金属
体を取付つけた直方体形状のもの、あるいは第３
図ｂに示す第１の金属線の外周に第２の金属体を
取付けた円柱状のもの等、その形状ならびに第１
の金属体と第２の金属体の取付け方等には何ら制
限を受けるものではなく特許請求範囲に記すすべ
ての半導体装置に及ぶことは明らかであろう。 The effects of the present invention have been explained above with reference to the drawings, but the effects of the present invention are obtained by attaching the second metal body to the two sides of the first metal body as a metal support shown in FIG. 3a. Rectangular parallelepiped or third
The shape and shape of the first metal wire, such as a cylindrical one with a second metal body attached to the outer periphery of the first metal wire shown in Figure b,
It is clear that there are no restrictions on the method of attaching the metal body and the second metal body, and the invention applies to all semiconductor devices recited in the claims.
第１図は従来の半導体装置を示す縦断面図であ
り、第２図は本発明の一実施例を示す縦断面図で
ある。第３図ａおよびｂは本発明に係る金属支持
体の製法例を示す概要図である。
１０１，２０１…放熱用ベース、１０２，２０
２…壁部材開孔部、１０３，２０３…壁部材、１
０４，２０４…半導体素子、１０５，２０５…金
属支持体、２０６…第１の金属体、２０７…第２
の金属体、１０８，２０８…金属細線、１０９，
２０９…外部導出リード。
FIG. 1 is a longitudinal sectional view showing a conventional semiconductor device, and FIG. 2 is a longitudinal sectional view showing an embodiment of the present invention. FIGS. 3a and 3b are schematic diagrams showing an example of a method for manufacturing a metal support according to the present invention. 101,201...Base for heat dissipation, 102,20
2... Wall member opening portion, 103, 203... Wall member, 1
04,204...Semiconductor element, 105,205...Metal support, 206...First metal body, 207...Second
Metal body, 108, 208... Metal thin wire, 109,
209...External lead.
Claims (1)
られ中央部に開口部を有する壁部材と、該壁部材
の前記中央部に露出する前記放熱用ベース上に設
けられた金属支持体とを有する容器に半導体素子
を収納してなる半導体装置に於いて、前記金属支
持体が高熱伝導性を有する第１の金属体と、該第
１の金属体の側面に取付けられた低熱膨張係数を
有する第２の金属体とを有し、前記半導体素子
は、前記金属支持体の前記第１の金属体上に搭載
されていることを特徴とする半導体装置。1 Comprising a heat dissipation base, a wall member mounted on the heat dissipation base and having an opening in the center, and a metal support provided on the heat dissipation base exposed in the center part of the wall member. In a semiconductor device in which a semiconductor element is housed in a container, the metal support includes a first metal body having high thermal conductivity and a first metal body having a low coefficient of thermal expansion attached to a side surface of the first metal body. 2 metal bodies, and the semiconductor element is mounted on the first metal body of the metal support.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8843383A JPS59214245A (en) | 1983-05-20 | 1983-05-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8843383A JPS59214245A (en) | 1983-05-20 | 1983-05-20 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59214245A JPS59214245A (en) | 1984-12-04 |
| JPH0126540B2 true JPH0126540B2 (en) | 1989-05-24 |
Family
ID=13942656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8843383A Granted JPS59214245A (en) | 1983-05-20 | 1983-05-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59214245A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012134230A (en) * | 2010-12-20 | 2012-07-12 | Kyocera Corp | Circuit board and electronic apparatus using the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5352070A (en) * | 1976-10-22 | 1978-05-12 | Hitachi Ltd | Semiconductor unit |
-
1983
- 1983-05-20 JP JP8843383A patent/JPS59214245A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5352070A (en) * | 1976-10-22 | 1978-05-12 | Hitachi Ltd | Semiconductor unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59214245A (en) | 1984-12-04 |
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