JPH0650507Y2 - 多結晶シリコン製造用電源装置 - Google Patents
多結晶シリコン製造用電源装置Info
- Publication number
- JPH0650507Y2 JPH0650507Y2 JP18707187U JP18707187U JPH0650507Y2 JP H0650507 Y2 JPH0650507 Y2 JP H0650507Y2 JP 18707187 U JP18707187 U JP 18707187U JP 18707187 U JP18707187 U JP 18707187U JP H0650507 Y2 JPH0650507 Y2 JP H0650507Y2
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- transformer
- silicon
- polycrystalline silicon
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 5
- 238000004519 manufacturing process Methods 0.000 title description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18707187U JPH0650507Y2 (ja) | 1987-12-07 | 1987-12-07 | 多結晶シリコン製造用電源装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18707187U JPH0650507Y2 (ja) | 1987-12-07 | 1987-12-07 | 多結晶シリコン製造用電源装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0189929U JPH0189929U (enExample) | 1989-06-13 |
| JPH0650507Y2 true JPH0650507Y2 (ja) | 1994-12-21 |
Family
ID=31478256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18707187U Expired - Lifetime JPH0650507Y2 (ja) | 1987-12-07 | 1987-12-07 | 多結晶シリコン製造用電源装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0650507Y2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110217486A1 (en) * | 2010-02-23 | 2011-09-08 | Teoss Co., Ltd. | Method for processing a chemical vapor deposition (cvd) and a cvd device using the same |
| EP2388236A1 (de) * | 2010-05-21 | 2011-11-23 | AEG Power Solutions B.V. | Stromversorgung mit einer ersten und einer zweiten Spannungsversorgung |
-
1987
- 1987-12-07 JP JP18707187U patent/JPH0650507Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0189929U (enExample) | 1989-06-13 |
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