JPH0649670A - Production of spiral member - Google Patents

Abstract

PURPOSE:To provide the process for production of the spiral member in such a manner that the spiral member can be produced at sizes of several tens to several hundreds mum. orders. CONSTITUTION:The process for production of the spiral member includes an insulating film depositing stage for depositing an insulating film 12 on the outer periphery of a coil core material 11, a conductive film depositing stage for depositing a conductive film 13 on the outer periphery of the insulating film 12 and a stage for coating the outer periphery of the conductive film 13 with a resist film 14, exposing the resist film 14 to form spiral grooves 15 on the resist film 14 and to expose the conductive film 13 in the bottom of the grooves 15 by moving a ray L in an arrow direction shown in Fig. while rotating the coil core material 11, then etching the exposed parts of the conductive film 13 and removing the resist film 14, thereby obtaining a microcoil 16 formed as the conductive film 13 is spirally etched.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a spiral member, and more particularly to a spiral member for manufacturing a micro coil and a micro spring used as constituent elements of a micro machine on the order of tens to hundreds of μm. It relates to a manufacturing method.

[0002]

2. Description of the Related Art In recent years, μ using a semiconductor manufacturing process has been applied.
A technology (micromechatronics technology) for manufacturing mechanical parts of the order of m and micromachines of several tens to several hundreds of μm has been developed, and has begun to be applied to biomedical, micro optics, fluid control, and extreme probing. As such mechanical parts and micromachines, for example, gears, link mechanisms, micrometers, cantilevers, acceleration sensors, etc. have been reported (Fujita, "Present and future of micromechatronics", KAST. Report, Vo.
l. 2, No. 4, 1991).

It has been conventionally practiced to provide a fine structure on a solid surface to have various functions. For example, diffraction gratings are used in various optical circuit devices such as filters, optical couplers, distributed feedback (DFB) lasers, and distributed Bragg reflection (DBR) lasers in the field of optoelectronics. Particularly, since the diffraction grating formed in the wavelength controlling or wavelength tunable semiconductor laser device represented by the DFB laser and the DBR laser is used as a resonator of the laser, the period, shape, and depth of the diffraction grating have laser characteristics. It becomes an important factor to determine (oscillation threshold, coupling coefficient, etc.),
It is an important issue to form a highly accurate diffraction grating in these laser elements with good controllability. Conventionally, such a diffractive circuit is produced through a two-step process of producing a lattice-shaped photoresist mask and etching. The period of the diffraction grating used in the field of optoelectronics is 0.
Since it is as fine as about 1 to 1.0 μm, the conventional photolithography technique cannot be applied to the production of the photoresist mask. Therefore, the holographic exposure method has been generally used. This is an exposure method using the interference of laser light, and the process is shown in FIGS. 11 (a) to 11 (d). In this method, the photoresist 1 is previously formed on the surface.
First, as shown in FIG. 11A, two laser beams 113 and 114, which are sufficiently parallel rays, are used in two directions (in the example of FIG. 11A, the substrate 111 is used). The surface of the substrate 111 to be processed is irradiated from two directions each having an angle θ with respect to the vertical to the surface, and interference fringes are formed on the surface to periodically expose the photoresist 112. After that, development and heat treatment are performed to form a lattice photoresist 115 having a period Λ as shown in FIG. 11B, and wet etching or dry etching is performed using the lattice photoresist 115 as an etching mask. Perform [Fig. 11
(C)] Finally, the grating-shaped photoresist 115 is removed to obtain a periodic structure 116, that is, a diffraction grating as shown in FIG. 11 (d).

Conventionally, an optical filter or the like has been manufactured by a method of forming a photosensitive material containing a plurality of pigments or dyes on a light transmissive substrate in a mosaic pattern. A conventional example will be described with reference to FIG. First, the transparent substrate 61
0 to pattern the light shielding layer 620 (see FIG. 13).
(A)). Next, a first photosensitive material layer 630 containing a pigment or a dye is formed on one surface of the substrate (FIG. 13).
(B)). This layer is exposed and developed to form a mosaic pattern-shaped first photoselective absorption layer 640 (FIG. 13).
(C)). This process is repeated twice more to make the second absorption layer 6
50 and the 3rd absorption layer 660 are formed, and it is set as the color filter 670 (FIG.13 (d)).

In mechanical devices, springs are an important component. 2. Description of the Related Art Conventionally, in a large-scale mechanical device as well as a precision small-sized mechanical device, a spring is formed by machining a predetermined material into a predetermined shape, and then incorporated into the mechanical device for use.

On the other hand, in a finer mechanical device,
It becomes difficult or impossible to create a spring by machining or to incorporate the created spring. In such a mechanical device, a method is known in which semiconductor process technology is applied to fabricate mechanical parts in an assembled form. As a method of forming a spring element in such a method, a thin film pattern of a predetermined spring element is formed on a substrate, and then the substrate under the thin film is removed, or it is called a sacrifice layer on the substrate. A method is known in which a layer that is easy to remove is formed, a thin film pattern used as a spring is formed on a sacrificial layer, and then the sacrificial layer is removed by a chemical method to form a spring element.

However, in the conventional spring manufacturing method to which the semiconductor process technology is applied, it is necessary to remove the substrate or the sacrificial layer by a chemical method or the like,
This limits the spring material or substrate material.

[0008]

A method of manufacturing a spiral member such as a micro coil and a micro spring, which is one of the important components of a micro machine, in the order of several tens to several hundreds of μm has hitherto been known. Since the micromachine of (1) has a relatively simple structure and does not require a spiral member, it has not been reported yet.

However, in order to construct a magnetic force microactuator which can be driven at a low voltage as compared with an electrostatic force microactuator which requires a high voltage of several hundreds of volts as a driving voltage, and to improve the functionality of a micromachine. Therefore, there is a demand for a method of manufacturing a spiral member such as a micro coil or a micro spring in a size of several tens to several hundreds μm.

A first object of the present invention is to provide a method of manufacturing a spiral member, which can manufacture the spiral member in a size of several tens to several hundreds μm.

In the conventional etching method for forming a fine structure, which is represented by the above-described method of forming a diffraction grating, a photoresist is always applied to each work piece to perform coherent exposure, and further development is performed. Therefore, there is a problem that the process becomes complicated and the reproducibility, yield, and throughput are deteriorated. Furthermore, it is necessary to finally remove and remove the photoresist, and at this time resist residues and contamination easily occur,
There is a problem in that yield and reliability are lowered in the subsequent steps.

A second object of the present invention is that a fine structure can be provided on the surface of a work piece without applying a photoresist to the work piece and the process is easy.
An object of the present invention is to provide an etching method having high reproducibility and reliability, and an etching apparatus using this method.

Further, in the above-mentioned conventional example, C which is rapidly advancing
Since it is not possible to deal with high resolution of an image pickup device such as a CD or a light receiving device or a color display, the following problems occur. That is, a photosensitive material containing a pigment or a dye has a relatively low resolution, and when formed by a conventional method, the pattern is sagging. In the case where the pattern size is as wide as 10 to 20 μm as in the conventional case, this sag is shown in FIG.
As shown in (a), the first photoselective absorption layer 640 and the second photoselective absorption layer 640
However, when the resolution of several μm or less or submicron or less is required, the second photoselective absorption layer as shown in FIG. A part of 650 is the third photoselective absorption layer 66.
There is a problem in that the light penetrates into the region of 0, the shoulder is extended to the light transmitting portion, and thus light of different wavelengths is detected and the resolution of the image is deteriorated. Further, there is a problem in that the manufacturing method of the optical filter is complicated. Since the patterning is repeated using the resist as shown in the conventional example, the manufacturing process is long and complicated, which causes an increase in cost and a decrease in yield.

A third object of the present invention is to provide a method for manufacturing a high-definition optical filter which prevents the shoulder sagging of the pattern having the above problems at a lower cost and a higher yield.

Further, a fourth object of the present invention is to provide a method for producing a micro spring, which is important as a mechanical element for a micro mechanical device, by utilizing a wide range of spring materials by applying a semiconductor process technology. It is in.

[0016]

[Means for Solving the Problems]

(First invention): A method for manufacturing a spiral member according to the present invention comprises: a conductive film depositing step of depositing a conductive film on an outer periphery of a core material; and a spiral forming of the conductive film deposited in the conductive film depositing step. Etching to form a spiral conductor.

Here, before the conductive film depositing step, an insulating film depositing step of depositing a conductive film on the outer periphery of the core material may be included, and the etching step may include two rays or two.
It may have a resist drawing process using a book electron beam.

In addition, a second insulating film deposition step of depositing a second insulating film on the outer periphery of the spiral conductive wire, and one of the second insulating film deposited in the second insulating film deposition step. An insulating film removing step of removing one end of the spiral conducting wire to expose one end of the spiral conducting wire; and one end of the spiral conducting wire exposed in the insulating film removing step and the second insulating film. On the outer circumference of
A second conductive film depositing step of depositing the conductive film of, and a second spiral conducting wire is formed by spirally etching the second insulating film deposited in the second conductive film depositing step. The second etching step may be included.

At this time, the etching step and the second etching step may each include a resist drawing process using two light beams or two electron beams.

Further, a third insulating film depositing step of depositing a third insulating film on the outer circumference of the second spiral conductive wire, and the third insulating film depositing step.
Second insulating film removing step of removing the other end of the third insulating film deposited in the insulating film depositing step to expose the other end of the second spiral conducting wire; A third conductive film depositing step of depositing a third conductive film on the outer periphery of the other end of the second spiral conductive wire exposed in the second insulating film removing step and the third insulating film; The third insulating film deposited in the third conductive film deposition step is spirally etched,
And a third etching step of forming a third spiral conductive wire.

At this time, the etching step and the second step
And the third etching step,
Each may have a resist drawing process using two rays or two electron beams.

Another method for manufacturing a spiral member according to the present invention is a spiral member forming step of forming a spiral member on the outer periphery of a fine wire having a diameter of 1 mm or less by using a resist drawing process using a light beam or an electron beam, and the spiral member forming step. A fine line removing step of removing the fine line on which the spiral member is formed in the strip-shaped member forming step.

The method for manufacturing a spiral member according to the present invention comprises a conductive film deposition step of depositing a conductive film on the outer periphery of a core material, and a spiral conductive wire by spirally etching the conductive film deposited in the conductive film deposition step. By including an etching step to form
Since the spiral member can be manufactured by applying the semiconductor process, it is possible to perform processing in the order of μm in the etching process.

A spiral member is formed on the outer periphery of a fine wire having a diameter of 1 mm or less by using a resist drawing process using a light beam or an electron beam, and a spiral member is formed in the spiral member forming step. By including a fine line removing step of removing fine lines, it is possible to manufacture a hollow spiral member having an order of several tens to several hundreds of μm by applying a semiconductor process. (Second invention): The etching method of the present invention comprises the following two methods.

The first etching method is an etching method for finely etching the surface of a workpiece,
The surface of the work piece and one end of the fine conduit are arranged to face each other with a minute distance, and the etching liquid is supplied to the conduit, and when protruding, the tip of the etching liquid contacts the surface and does not protrude. Occasionally, the tip does not come into contact with the surface and the etching solution does not substantially flow out from the one end, and a force is periodically applied to the etching solution so that the tip of the etching solution is periodically removed from the one end. Make it protrude.

The second etching method is an etching method for finely etching the surface of a workpiece,
The surface of the work piece and one end of the fine conduit are arranged to face each other at a minute distance, and the etching liquid is supplied to the conduit to bring the tip of the etching liquid to any one of the conduits by surface tension and capillary force. While holding the tip at the site, the pressure is periodically applied to the etching liquid while maintaining the tip held, and the tip is periodically projected from the one end and brought into contact with the surface.

The etching apparatus of the present invention is an etching apparatus used when performing fine etching on the surface of a workpiece, and a recess for storing an etching solution and one end thereof can face the surface of the workpiece. By having a fine conduit formed at the other end and connected to the recess, and a projecting means for periodically applying an acting force to the etching solution stored in the recess, by driving the projecting means. The tip of the etching solution is periodically projected from the one end without substantially flowing out from the one end.

In the etching method of the present invention, the tip of the etching liquid is periodically projected from one end of the fine conduit, and the tip of the etching liquid is brought into contact with the surface of the workpiece at the time of projection, so that the sectional shape of the fine conduit is formed. The work piece will be etched accordingly. In this case, by preventing the etching liquid from substantially flowing out from one end of the conduit, it is possible to prevent etching of a portion which is not required to be etched.

Since the tip of the etching solution is projected, the distance between one end of the conduit and the object to be processed is very small, but the composition of the etching solution is adjusted to stabilize the conditions when the etching solution is projected. It is desirable to pay attention to the selection of the material of the conduit so that the tip of the etching solution forms a meniscus by the surface tension and the capillary force and is held at a predetermined part of the conduit in a stationary state. By doing so, even if the amount of the etching solution changes to some extent, the position of the tip of the etching solution in the stationary state hardly changes, and stable etching can be performed.

As a method of projecting the tip of the etching solution, it is possible to store the etching solution in an etching solution reservoir communicating with the conduit and directly change the volume of the etching solution in the etching solution reservoir. Such a method is not preferable because it may not sufficiently project depending on the total amount of the etching solution or may cause the etching solution to flow out from one end of the conduit.
On the other hand, when the tip of the etching solution forms a meniscus by the surface tension and the capillary force so as to be held at a predetermined portion of the conduit and the pressure applied to the etching solution is changed, the amount of protrusion is Since it is determined only by the tension, the capillary force, and the applied pressure, stable etching can be performed even if the amount of the etching solution changes to some extent.

Furthermore, when an etching solution reservoir is connected to the other end of the conduit, the tip of the etching liquid is made to recede to the vicinity of the other end of the conduit when it is not protruding.
This etching solution near the tip is replaced with a fresh etching solution in the etching solution reservoir, and the next time it projects, it becomes a fresh etching solution that comes into contact with the workpiece, which is advantageous because the etching efficiency is improved. .

The etching apparatus of the present invention comprises a recess for storing an etching solution, a fine conduit pipe having one end facing the surface of a workpiece and the other end connected to the recess, and the etching stored in the recess. Since it has a projecting means for periodically applying an acting force to the liquid, the tip of the etching solution periodically projects from one end of the conduit by driving the projecting means, and the end of the conduit is processed. If the object is placed at a very small distance, the surface of the work piece will be etched according to the shape of the conduit.

The protruding means may be a cantilever and a means for displacing the cantilever, and the means for displacing the cantilever comprises a piezoelectric thin film and a pair of electrodes for applying a voltage to the piezoelectric thin film. It is good to use one. Further, when etching a minute shape, it is desirable that the etching apparatus itself is formed small, and the recess, the conduit and the projecting means may be integrally formed on the substrate to configure the etching apparatus. Further, for the same reason as described in the etching method, it is desirable that the tip of the etching liquid forms a meniscus by the surface tension and the capillary force and is held at a predetermined portion of the conduit. It is preferable that the etching liquid is naturally provided and held in the conduit by gravity. (Third invention): In order to achieve the third object of the present invention, the present invention is to manufacture an optical filter in which a predetermined type of light selective absorption layer is repeatedly arranged in a mosaic pattern on a light transmissive substrate. In the method, (1) a step of forming a resist pattern by lithography on a light-transmissive substrate having an electrode layer formed on the surface thereof, using a resist sensitive to X-rays or ultraviolet rays to remove a resist portion corresponding to a light-shielding layer; (2) A light-shielding layer of plated metal is formed on the electrode layer by performing plating using the electrode layer of the substrate on which the resist pattern is formed as an electrode, and then the resist pattern on the substrate and the electrode layer below the resist pattern are removed. To form a substrate having a light-shielding layer, and (3) a hole of a perforated mask corresponding to one type of photoselective absorption layer arrangement is used to select one type of the substrate. A type of dye or pigment is vapor-deposited on the portion where the selective absorption layer is to be formed, and then the mask is moved so that the holes of the mask are overlapped on the portion where the photo-selective absorption layer of another type is to be formed. The light-shielding layer is formed of a gold-plated film, which is composed of the steps (1), (2), and (3) of repeating vapor deposition of a dye or pigment a predetermined number of times. including.

The manufacturing method of the present invention will be described below with reference to the drawings. The schematic cross-sectional views of FIGS. 12A to 12G show one embodiment of the method for manufacturing an optical filter.

In FIG. 12A, reference numeral 511 denotes a light transmissive substrate on which an electrode layer 512 for electroplating is formed.

As the substrate, one having good light transmittance is preferable, and for example, quartz glass, silicon nitride or the like is preferable.

The electrode layer 512 is made of Au / Cr, Au / Ti,
Cu / Cr, Cu / Ti and the like are preferable, and examples of the forming method include EB vapor deposition, resistance heating device, and sputtering vapor deposition.

Next, on the electrode layer 512 of the substrate 511,
A resist layer 513 is formed as shown in FIG. This resist is a resist sensitive to X-rays or ultraviolet rays, and other resists cannot be adopted from the viewpoint of resolution. As these resists, novolac resin type or acrylic resin type resists can be used. Speaking of product names, novolac resin type (AZ-PN100: Hoechst, TSMR-
V3: Tokyo Ohka Co., Ltd., acrylic resin type (OEBR-
1000: Tokyo Ohkasha) and the like are preferable.

Next, the resist layer 513 is exposed with a pattern corresponding to a light shielding layer described later. The pattern of the light-shielding layer is formed in a repetitive array of mosaic shapes having a desired color number in consideration of the shape and size of the light selective absorption layer to be formed. As the exposure method, a known method can be adopted. After that, the resist layer 513 is developed, and the resist layer above the portion of the electrode layer 512 corresponding to the light shielding layer is dissolved and removed. These techniques are based on known lithography.

Next, electrolytic plating is performed using the electrode layer 512 as a cathode to fill the resist portion that has been dissolved and removed as shown in FIG. 12C to form a light shielding layer 514 of plated metal. That is, the light shielding layer 514 is formed by performing electrolytic plating using the resist pattern as a stencil. Au, Ni, C as plating metal
r, Cu and the like are preferable.

The width and height (plating thickness) of the light shielding layer 514 are variously selected according to the purpose, but generally the width is 0.
The thickness is preferably 2 to 10 μm and the height is 1 to 50 μm.

After forming the light shielding layer 514 by plating, the resist is dissolved and removed. The resist is dissolved and removed by a known method (FIG. 12 (d)).

After that, the plating electrode layer 512 under the resist pattern, which is revealed by removing the resist, is formed.
By removing (FIG. 12A), a substrate 511 having a light-shielding layer 514 having a predetermined height as shown in FIG. 12E on the surface is obtained. As a method for removing the electrode layer 512, there is dry etching using a gas such as Ar, O ₂ , N ₂ , Cl ₂ or wet etching using an etching solution capable of dissolving the electrode layer 512.

Next, as shown in FIG. 12 (f), among the predetermined types (three types in this example) of the light selective absorption layers,
A perforated mask 517 having an array of holes 516 corresponding to the array of one type of photoselective absorption layer 515 described later is placed on the substrate 511. In this case, the position of the hole 516 and the position of the light selective absorption layer to be formed must match. In this state, the pigment or dye is heated in a vacuum device and vapor-deposited at a predetermined position of the optical filter through the perforated mass. FIG. 12F shows this state, and the above-mentioned one type of the light selective absorption layer 515 can be formed surely and uniformly in a predetermined place divided by the light shielding layer 514 by vapor deposition.

The pigment or dye pigment in the present invention is preferably a sublimable pigment capable of vapor deposition. Specifically, it is an acetoacetic anilide type, a naphthol monoazo type, a polycyclic type, or a dispersion. Various dyes such as system, oil-soluble, indacerene, and phthalocyanine can be used. Preferred are perylene-based, isoindolinone-based, anthraquinone-based, and quinacridone-based dyes.

Next, by moving the mask 517, the mask 51 is formed by arranging another kind of photoselective absorption layer 518 to be formed.
The holes 516 of No. 7 are aligned and vapor deposition is performed in the same manner. As a result, another type of the light selective absorption layer 518 is formed, and by repeating vapor deposition a predetermined number of times in the same manner, the optical filter according to the manufacturing method of the present invention is manufactured.

According to this example, the number of times of vapor deposition is three, and it is possible to obtain the optical filter 520 shown in FIG. 12 (g) by forming another type of photoselective absorption layer 519. is there.

Next, a method of manufacturing the perforated mask 517 will be described. For the perforated mask, for example, as shown in FIG. 15A, a silicon nitride film 522 is formed on the entire surface of the Si wafer 521, and as shown in FIG. 523 is formed. After that, Si is removed by etching with a potassium hydroxide aqueous solution or the like (FIG. 15C). Next, after forming a resist layer on the surface of the silicon nitride film 522, a desired pattern 524 is formed as shown in FIG. 15D, dry etching is performed using this as a mask, and holes shown in FIG. The open mask is 525. 526 is a formed hole. (Fourth invention): Fourth invention to achieve the fourth object
In the method for producing a microspring of the present invention, after forming a thin film having a tensile stress on a substrate, forming a band-shaped cut pattern portion opened in the thin film, and then by heating or cooling at least the cut pattern portion, The cut pattern portion is peeled from the substrate to form a spring in which the substrate and the cut pattern portion are connected to each other at the opened portion. Also, the tensile stress of the thin film is 10 ⁹
˜5 × 10 ¹⁰ dyne / cm ² , and formation of the cut pattern portion includes forming by cutting a thin film by a focused ion beam method.

In the method for producing a spring according to the present invention, a thin film is laminated on a substrate, the thin film has a tensile stress at a working temperature, and by peeling a part of the thin film, a spring shape integrated with the substrate is formed. It is what

The details of the fourth aspect of the present invention will be described below.

In the present invention, as shown in FIG. 16A, first, a thin film 720 having a tensile stress is formed on a substrate 710.

The substrate can be a support.
If it can be used without particular limitation, for example, metal,
Used for semi-metals, ceramics, glass, plastics, etc.
Can be Especially single crystal silicon or quartz glass
preferable. On the other hand, the thin film to be laminated on the substrate is gold
Metal, semimetal, ceramics, glass, plastic, etc.
Is used. The thickness of the thin film is 0.1 μm or more, 100
μm or less, preferably 1 μm or more and 10 μm or less is used
To be Sufficient spring constant can be obtained below 0.1 μm
No, a stable film can be obtained due to internal stress at 100 μm or more.
I can't. As a method of forming a thin film, vacuum deposition or
A method such as coating or coating is used. Substrate and thin film combination
At the operating temperature, it is possible to make a thin film 10⁹ dyne / c
m² Through 10 ^Tendyne / cm² Some tensile stress is generated
And the adhesion between the substrate and the thin film is 10^Tendyne / cm
² A combination of degrees is preferred. Adhesion or response
Between the substrate and the thin film for the purpose of controlling the force,
It is permissible to provide another thin film 730 as shown in FIG.
It It should be noted that another thin film is not limited to a single layer, and a plurality of layers may be provided.
Good.

The thin film 720 formed on the substrate 710 as described above is then provided with a predetermined cut 740 as shown in FIG. 16B to form a band-shaped cut pattern portion 750. The spring shape is determined. The cut 740 is formed in a strip shape on the thin film 720 without crossing, and an open portion r is formed so that the cut start p and the cut end q do not overlap each other.
The shape of the cut pattern portion 750 is not limited to the rectangular shape, and can be various shapes such as the spiral shape shown in FIG.

As a method of making a notch, there is a method of applying so-called photolithography or a method of using a focused ion beam.

At the stage of making a notch, the spring portion peels from the substrate due to stress. However, if the spring portion does not peel depending on the size and shape of the spring, the spring-shaped portion is peeled from the substrate, so that the entire substrate is covered. , At least the cut pattern portion 75
Heat to 0, cool, and optionally cycle through these. Alternatively, only the vicinity of the spring portion may be heated by a laser, an electron beam or the like, and if necessary, a method of irradiating ultrasonic waves may be used together. According to the above method, FIG.
As shown in FIG. 5, a spring can be formed in which the substrate 710 and the cut pattern portion 750 are connected at the open portion r.

[0056]

Embodiments of the present invention will be described below with reference to the drawings. (First Invention): <First Embodiment> FIGS. 1A to 1J are views showing a first embodiment of a method for manufacturing a spiral member according to the present invention.

This embodiment is for manufacturing a micro coil of the order of several tens to several hundreds of μm, and the core of the micro coil is
A coil core material 11 made of a cylindrical solid stainless steel rod having a diameter of 100 μm shown in FIG.

First, the coil core material 11 and the conductive film 1 described later.
In order to electrically insulate the wire 3 from the wire 3, an insulating film 12 is deposited on the outer periphery of the coil core material 11 (insulating film deposition step), as shown in FIG. Here, the insulating film 12 is formed by, for example, a known Langmuir-Projet method (LB method),
It is formed by stacking 48 layers of polyimide films, which are thin films of organic materials. Then, as shown in FIG.
The conductive film 13 is deposited on the outer periphery of the (conductive film deposition step). Here, the conductive film 13 is made of aluminum by a known vacuum deposition method while keeping the coil core material 11 on which the insulating film 12 is deposited at a temperature equal to or lower than room temperature and rotating about the axis, by a known vacuum deposition method. It is formed by depositing about 5 μm. The length of the conductive film 13 in the axial direction is, for example, 50.
It is about 0 μm.

Subsequently, as shown in FIG. 6D, a resist film 14 is applied to the outer periphery of the conductive film 13. Here, as the resist film 14, for example, a positive resist material having a film thickness of 1.
It is applied to about 2 μm. Then, as shown in FIG. 6E, the light beam L is rotated while rotating the coil core member 11.
(An electron beam may be used instead of the light ray L) is moved in the direction of the arrow in the drawing to expose the resist film 14, and then the resist film 14 is developed and post-baked. As a result, a spiral groove 15 is formed in the resist film 14 as shown in FIG.
Is formed, and the conductive film 13 at the bottom of the groove 15 is exposed.
After that, the coil core material 11 is dipped in an etching solution to etch the exposed portion of the conductive film 13 as shown in FIG. Here, as the etching solution, the conductive film 1 is used.
When 3 is made of aluminum, for example, H ₃ P
O ₄ : HNO ₃ : CH ₃ COOH: H ₂ O = 16: 1:
Etching solutions with a 2: 1 ratio can be used. Thereafter, as shown in FIG. 3H, the resist film 14 is removed to obtain the minute coil 16 formed by spirally etching the conductive film 13 (the above is the etching step). Here, the resist film 14 is removed by immersing the coil core material 11 in a dedicated resist stripping solution.

Subsequently, as shown in FIG. 1I, a protective film 17 having an electrically insulating property is deposited on the outer periphery of the micro coil 16, and then, as shown in FIG.
The protective film 17 at one end (only one end is shown) is removed to expose the conductive film 13 to form an electrical connection with the outside.

From the above, for example, a diameter of 100 μm,
The micro coil 16 having a length of about 500 μm can be manufactured. <Embodiment 2> FIG. 2 is a view showing a second embodiment of the method for manufacturing a spiral member of the present invention.

In this embodiment, the etching process has a resist drawing process using two light beams, and a minute double coil of the order of several tens to several hundreds μm is manufactured.
Is different from the embodiment described above. That is, in the present embodiment, in the etching process, the resist film 24 is exposed to the first coil region 28 ₁ by exposing the resist film 24 using the first light beam L ₁ and the second light beam L ₂ . 2 coil areas 2
It is divided into 8 ₂ to produce a minute double coil of the order of several tens to several hundreds μm.

Two rays (first ray L ₁ and second ray L
Instead of the resist drawing process by rays L _2),
It may have a resist drawing process using two electron beams. <Embodiment 3> FIGS. 3A to 3C are sectional views showing a third embodiment of the method for manufacturing a spiral member according to the present invention.

In this embodiment, a two-stage micro coil of the order of several tens to several hundreds of μm is manufactured by superposing two conductive layers in the radial direction of the coil core material, as shown in FIG.
In addition to the insulating film depositing step, the conductive film depositing step, and the etching step shown in (H) to (H), the following steps are included.

(1) Second Insulating Film Depositing Step This is a step of depositing a second insulating film 31 having an electrically insulating property on the outer circumference of the coil core material 11 shown in FIG. 1 (H).
Here, the second insulating film 31 is formed by laminating 48 layers of a polyimide film, which is a thin film of an organic material, by a known Langmuir-Projet method (LB method), for example.

(2) Insulating Film Removing Step As shown in FIG. 3A, one end of the second insulating film 31 deposited in the second insulating film depositing step is removed, and the micro coil 16 is removed. Is a step of exposing one end of the.

(3) Second Conductive Film Depositing Step As shown in FIG. 3 (B), on the outer periphery of one end of the micro coil 16 exposed in the insulating film removing step and the second insulating film 31. This is a step of depositing the second conductive film 32. At this time, the minute coil 16 and the second conductive film 32 are electrically connected at one end of the minute coil 16 exposed in the insulating film removing step. Here, the second conductive film 32 is
For example, the coil core material 1 on which the second insulating film 31 is deposited
While keeping 1 at a temperature below room temperature and rotating it about an axis, aluminum is deposited to a film thickness of about 1.5 μm by a known vacuum deposition method.

(4) Second Etching Step The second conductive film 32 deposited in the second conductive film depositing step is spirally etched to form the second second layer shown in FIG. 3C. This is a step of forming the micro coil 33. Here, the second etching process is performed in the same manner as the etching process shown in FIGS.

In the two-stage micro coil manufactured as described above, the micro coil 16 in the first stage and the second micro coil 33 in the second stage are as shown in FIG. Although the grooves are provided at the same position as the grooves having the same inclination, the positions of the grooves may be different between the first-stage micro coil 16 and the second-stage second micro coil 33, or the first-stage micro coil 16 may be different. Micro coil 1
The inclination of the groove may be different between 6 and the second minute coil 33 of the second stage. <Embodiment 4> Next, a fourth embodiment of the method for manufacturing a spiral member of the present invention will be described.

In this example, a plurality of conductive layers are laminated in the radial direction of the coil core material to manufacture a micro coil in a plurality of stages of the order of several tens to several hundreds of μm.
The insulating film deposition step, the conductive film deposition step, and the etching step shown in (A) to (H), and the above-described second insulating film deposition step, insulating film removal step, second conductive film deposition step, and second conductive film deposition step. In addition to the etching process, the following processes are included.

(1) Third Insulating Film Depositing Step This is a step of depositing a third insulating film having an electrically insulating property on the outer periphery of the second micro coil 33 shown in FIG. 3 (C). Here, the third insulating film is formed by laminating 48 layers of a polyimide film, which is a thin film of an organic material, by a known Langmuir-Projet method (LB method), for example.

(2) Second Insulating Film Removing Step The other end of the third insulating film deposited in the third insulating film depositing step is removed to remove the other end of the second micro coil 33. Is a step of exposing.

(3) Third Conductive Film Deposition Step Second Micro Coil 3 Exposed during Second Insulating Film Removal Step
3 is a step of depositing a third conductive film on the outer periphery of the other end portion of 3 and the third insulating film. At this time, the second minute coil 33 and the third conductive film are electrically connected at the other end of the second minute coil 33 exposed in the second insulating film removing step. Here, the third conductive film holds, for example, the coil core material 11 on which the third insulating film is deposited at a temperature equal to or lower than room temperature and rotates about an axis,
Aluminum film thickness of 1.5 μm by known vacuum deposition method
Formed by depositing.

(4) Third Etching Step This is a step of spirally etching the third conductive film deposited in the third conductive film depositing step to form the third micro coil of the third stage. . Here, the third etching process is performed in the same manner as the etching process shown in FIGS.

Hereinafter, each step shown in FIG.
By repeating the steps up to (4), it is possible to manufacture a plurality of stages of micro coils of the order of several tens to several hundreds of μm. By connecting the conductive layers alternately at both ends instead of at one end, it is possible to manufacture a plurality of micro coils in a well-balanced manner.

In the first to fourth embodiments of the method for manufacturing the spiral member of the present invention described above, an example of the material and size of each member has been described, but the material and size of each member are It is not limited to. For example, as the material of the coil core material 11, in addition to the solid stainless rod, other metals, glass, plastic, etc. can be used. If glass, plastic, or the like is used as the material of the coil core material 11, the insulating film deposition step shown in FIG. 1B is not necessary. Further, the shape of the coil core material 11 may be a cylinder, a prism, or a prism other than the cylinder. The material of the conductive film 13 may be a metal or alloy other than aluminum. In addition, the conductive film 13
As a method of depositing, a vacuum deposition method, a sputtering method, a plating method, or the like may be used. As the patterning of the conductive film 13, in addition to a resist drawing process using light rays or electron beams, the conductive film 13 may be patterned by chemical etching, cutting using a cutter, or energy beam (laser beam, electron beam, etc.), Alternatively, the conductive film 13 may be selectively deposited. <Fifth Embodiment> FIGS. 4A to 4F are views showing a fifth embodiment of the method for manufacturing a spiral member according to the present invention.

In this embodiment, a micro spring of the order of several tens to several hundreds of μm is manufactured, and a thin wire 51 having a diameter of 1 mm or less (typically 500 μm or less) shown in FIG. Is used. The material of the thin wire 51 is Fe, Co, Ni, Cr, W, Ta, Mo, V, A.
In addition to metals such as 1 and alloys thereof, carbides, nitrides, borides, silicon, quartz and various fibers can be used.

First, as shown in FIG.
A photosensitive resist or electron beam resist (hereinafter,
It is called "resist 52". ) Is applied, and then the thin wire 51 is rotated about the axis while moving in the axial direction to draw a spiral resist by a light beam or an electron beam. Then, the thin wire 51 is dipped in an appropriate developing solution to remove the non-exposed portion of the resist 52, thereby forming a spiral resist 52 on the thin wire 51 as shown in FIG. Subsequently, a spring material 53 is deposited on the outer periphery of the thin wire 51 on which the spiral resist 52 is formed, as shown in FIG. The material of the spring material 53 is Fe, Co, Ni, C.
In addition to metals such as r, W, Ta, Mo, V and Al and their alloys, carbides, nitrides, borides, silicon,
Quartz and various plastics can be used. As a method of depositing the spring material 53, a vacuum vapor deposition method, a chemical vapor deposition method (CVD method), a sputtering method, an ion plating method, an electroplating method, an electroless plating method, or the like can be used. Then, by removing the spiral resist 52, as shown in FIG.
Only the spiral spring material 53 remains on the outer periphery of the thin wire 51 (the above is the spiral member forming step).

Then, by removing the thin wire 51,
As shown in FIG. 6F, the micro spring 54 having a diameter of 1 mm or less is manufactured (fine wire removing step). Here, thin line 5
The removal method of No. 1 depends on the material of the thin wire 51. For example, when the thin wire 51 is made of a metal such as Fe, Co, Ni, Cr, or Al, the thin wire 5 is added to an acid solution such as hydrochloric acid or sulfuric acid.
1 is used, and when the thin wire 51 is made of SiO ₂ , the method of dipping the thin wire 51 in a hydrofluoric acid solution is used, and when the thin wire 51 is made of fiber,
A method of heating the thin wire 51 to 200 ° C. or higher in air or oxygen is used.

Next, an example in which a micro spring of the order of several tens to several hundreds of μm is manufactured by the method for manufacturing the spiral member shown in FIG. 4 will be described.

[Prototype Example 1] A photosensitive resist was applied to the outer periphery of a quartz fine wire for an optical fiber having a diameter of 250 μm. Subsequently, while rotating the quartz fine wire coated with the photosensitive resist and moving the quartz fine wire in the axial direction, the photosensitive resist was spirally exposed by laser light (wavelength 488 nm) from an Ar laser. At this time, the beam diameter of the laser light is about 5
Exposure was performed by focusing on μm. Subsequently, after removing the non-exposed portion of the photosensitive resist with a developing solution, silicon was vapor-deposited on the outer periphery of the quartz fine wire by the plasma CVD method (vapor phase vapor deposition method). Subsequently, the photosensitive resist was removed with a resist removing solution, and the quartz fine wires were dissolved with a hydrofluoric acid solution to obtain a silicon micro spring of the order of several tens to several hundreds of μm.

[Prototype Example 2] An electron beam drawing resist was applied to the outer periphery of an aluminum fine wire having a diameter of 200 μm. continue,
While rotating the aluminum fine wire coated with the electron beam drawing resist and moving it in the axial direction, the electron beam drawing resist was spirally exposed with an electron beam at a line width of 1 μm and a pitch of 5 μm. After removing the non-exposed portion of the electron beam drawing resist with a developing solution, the aluminum fine wire was dipped in a gold electrolytic plating solution to form gold plating on the outer periphery of the aluminum fine wire. Subsequently, the electron beam drawing resist was removed with a resist removing solution, and then the aluminum fine wires were dissolved with a hydrochloric acid aqueous solution to obtain a gold micro spring of the order of several tens to several hundreds of μm. <Embodiment 6> FIGS. 5A to 5G are views showing a sixth embodiment of the method for manufacturing a spiral member according to the present invention.

In this embodiment, a micro spring of the order of several tens to several hundreds of μm is manufactured similarly to the fifth embodiment shown in FIG. In this embodiment, the thin wire 6 used as the central axis
As shown in FIG. 5B, a spring material 62 is deposited on the outer periphery of 1 (see FIG. 5A). Subsequently, as shown in FIG. 6C, a photosensitive resist or an electron beam resist (hereinafter referred to as “resist 63”) is applied to the outer periphery of the spring material 62, and then a thin wire 61 is formed around the axis. While rotating and moving in the axial direction, a spiral resist drawing by a light ray or an electron beam is performed. Then, the thin wire 61 is dipped in an appropriate developing solution to form a spiral resist 63 on the spring material 62, as shown in FIG. continue,
By etching the exposed portion of the spring material 62, the spiral spring material 62 and the resist 63 are left on the outer periphery of the thin wire 61, as shown in FIG. Then, thin line 6
By immersing 1 in the resist stripping solution, only the spiral spring material 62 is left on the outer periphery of the thin wire 61 (the above is the spiral member forming step), as shown in FIG. Finally, the thin wire 61
Are removed to obtain a micro spring 64 of the order of several tens to several hundreds of μm (fine line removing step), as shown in FIG.

Next, an example in which a micro spring is trial-produced by the method for manufacturing the spiral member shown in FIG. 5 will be described.

[Prototype 3] Aluminum fine wire having a diameter of 125 μm
On the outer periphery of the SiO 2 as a spring material by chemical vapor deposition
₂ A film was formed. Then, SiO₂ The photosensitive layer is
After applying the gist, rotating the thin aluminum wire
Laser beam from Ar laser while moving axially to
(Wavelength 488 nm) exposes photosensitive resist in a spiral pattern
It glowed. At this time, the beam diameter of the laser light is reduced to about 5 μm.
It was exposed. Then, the non-exposed part of the photosensitive resist
Is removed with a developing solution, and then reactive ion etching is used.
(CF _Four SiO exposed by gas)₂ Membrane
I did it. Next, feel that the resist stripper remains.
After removing the photo resist, dissolve the thin aluminum wire with sulfuric acid.
Then SiO₂ Made of tens to hundreds of micrometer
I got this. (Second invention): <Embodiment 7> FIGS. 6 (a) and 6 (b) show the present invention.
A top view of the etching apparatus of the embodiment and a cross-sectional view taken along the line A-A '.
7 (a) and 7 (b) explain the operation of this etching apparatus.
FIG. 6 is a schematic cross-sectional view taken along line A-A ′.

This etching apparatus is for forming a fine structure on the surface of a workpiece by the etching method of the present invention, and is a substrate 1 made of a silicon wafer or the like.
A substantially square recess 120 is provided on the upper surface of 10, and a fine through hole 130 that penetrates to the lower surface of the substrate 110 is provided at the center of the recess 120. A cantilever 140 made of silicon or silicon oxide is provided so as to cover the recess 120 more than halfway.
One end of is fixed to the upper surface of the substrate 110. Through hole 1
30 has a circular cross section and corresponds to a conduit.
In addition, on the upper surface of the cantilever 140, a lower electrode film 150 made of platinum (Pt) or the like, a lead titanate (PbTiO 3).
₃ ), lead zirconate titanate (PZT), zinc oxide (Z
A piezoelectric element film 160 made of nO) or the like and an upper electrode film 170 made of platinum or the like are sequentially laminated. Cantilever 140, electrode films 150, 170, piezoelectric element film 160
Constitute a piezoelectric vibrator 180, and the lower electrode film 150 and the upper electrode film 170 are insulated from each other.
By applying a voltage between 50 and 170, the free end (the end that is not fixed to the substrate 110) of the piezoelectric vibrator 180 is displaced in the vertical direction in the figure.

The recess 120 and the through hole 130 can be formed in the substrate 110 by a semiconductor fine processing technique (such as a silicon wafer micromachining technique). Further, the piezoelectric element film 160 is formed by a sputtering method, C
It can be formed by a thin film forming technique such as the VD method, and its film thickness is preferably about 1 to 3 μm.

Next, the operation of this etching apparatus will be described with reference to FIGS. 7 (a) and 7 (b).

First, in the recess 110, for example, 2 /
Pour the etching liquid 200 to about 3. At this time, even if the piezoelectric vibrator 180 is displaced to the maximum downward, the piezoelectric vibrator 180 is prevented from coming into contact with the etching liquid 200. Since the through holes 130 are minute, the tip of the etching solution 200 is retained by forming a meniscus at the lower end of the through holes 130 by the action of capillary force and surface tension, and the etching solution 200 flows out from the through holes 130. There is no. Then, the workpiece 210 is arranged on the lower surface of the substrate 110 with a minute distance. In this state, each electrode film 15
An AC voltage is applied between 0 and 170. As a result, the free end of the piezoelectric vibrator 180 vibrates up and down, and this vibration is transmitted to the etching liquid 200 as pressure vibration through the air between the piezoelectric vibrator 180 and the etching liquid 200.

When the free end of the piezoelectric vibrator 180 is displaced downward [FIG. 7 (a)], this displacement means that a positive pressure is applied to the etching liquid 200,
The tip of the etching liquid 200 projects from the lower end of the through hole 130 and contacts the surface of the workpiece 210. The surface of the workpiece is slightly etched due to the contact with the etching liquid 200. However, the etching liquid 200 does not flow out from the through hole 130 due to the action of surface tension or the like.

When the free end of the piezoelectric vibrator 180 is displaced upward [FIG. 7 (b)], the displacement causes a negative pressure to be applied to the etching liquid 200,
The tip of the etching liquid 200 recedes near the upper end of the through hole 130. Therefore, the tip of the etching solution 200, which is in contact with the workpiece 210, is almost pulled back into the recess 120, and when the etching solution 200 next enters the through hole 130, the etching solution enters the through hole 130. The liquid 200 becomes the fresh one accumulated in the recess 120.

The above operation is repeated as long as the piezoelectric vibrator 180 vibrates, and a concave portion corresponding to the sectional shape of the through hole 130 is formed on the surface of the workpiece 210. The etching depth can be controlled by the number of vibrations and the vibration frequency of the piezoelectric vibrator 180. <Embodiment 8> Next, another embodiment of the second invention will be described. This embodiment is an example in which a diffraction grating surface used for a ridge type DFB semiconductor laser is created by the method of the present invention. FIG. 8 is a top view of the etching apparatus used in this embodiment, FIGS. 9A and 9B are views for explaining the manufacturing process of the semiconductor laser in this embodiment, and FIG. 10 is a semiconductor laser to be produced. It is a perspective view explaining the structure of.

While the through hole having a circular cross section is used as the conduit in the etching apparatus of the above-described embodiment shown in FIG. 6, in the etching apparatus of this embodiment shown in FIG. A plurality of pipes are arranged in parallel at the bottom of 120 at equal intervals to form a conduit. The slot 190 penetrates the bottom of the recess 120 and the lower surface of the substrate 110. Further, the distance between the center lines of the slots 190 (the slots 19
0 period) is equal to the period of the formed diffraction grating.
Here, in order to manufacture a semiconductor laser, the period of the groove holes 190 was set to 0.24 μm. As a method of forming the groove holes 190 at such minute intervals, the holographic method as described in the related art can be used. In this case, since the accuracy of forming the groove 190 determines the accuracy of the diffraction grating, the groove 190 must be formed carefully, but once this etching apparatus is completed, one etching apparatus can be used to form a large number of diffraction gratings. As a whole, the process is simplified, the productivity is greatly improved, and the accuracy of the obtained diffraction grating is improved.

First, the structure of the ridge type DFB semiconductor laser formed will be described with reference to FIG. This semiconductor laser has a well-known structure and includes an n-type GaAs substrate 310, an n-type GaAs buffer layer 320, and an n-type A substrate.
1 GaAs clad layer 330, active layer 340 made of AlGaAs multiple quantum wells or bulk AlGaAs, GaAs, p-type AlGaAs barrier layer 350, p-type Al
The GaAs optical guide layer 360 is sequentially laminated, and the p-type Al is formed.
On the GaAs optical guide layer 360, p-type AlG is formed in a ridge shape.
aAs clad layer 380 and p-type GaAs gap layer 39
0 is laminated, the exposed upper surface except the p-type GaAs gap layer 390 is covered with the silicon nitride layer 400, the n-type ohmic electrode 410 is provided on the lower surface of the n-type GaAs substrate 310, and the entire upper surface is further covered. In this structure, a p-type ohmic electrode 420 is provided. And p-type Al
The upper surface of the GaAs light guide layer 360 is a diffraction grating surface 370 having a period for phase shift of 0.24 μm.
The diffraction grating surface 370 is formed by the etching apparatus shown in FIG.

Next, the method of manufacturing the semiconductor laser will be described, and the operation of this embodiment will be described.

First, using a molecular beam epitaxial device,
On the n-type GaAs substrate 310, an n-type GaAs buffer layer 320 having a thickness of 0.5 μm and n-type Al having a thickness of 1.5 μm
GaAs clad layer 330, active layer 3 having a thickness of 0.1 μm
40, p-type AlGaAs barrier layer 35 having a thickness of 0.1 μm
0, 0.2 μm thick p-type AlGaAs optical guide layer 36
0 was sequentially epitaxially grown.

Next, the p-type AlGaAs optical guide layer 360
And the substrate 110 of the etching apparatus of this embodiment are arranged to face each other with a minute gap, the etching liquid 200 is poured into the recess 120, and the GaAs substrate 310 and this etching apparatus are aligned. As the etching liquid 200, one made of sulfuric acid + hydrogen peroxide + water was used. The outline of the cross-sectional arrangement in this state is shown in FIG. 9A, and it can be seen that the tip of the etching liquid 200 is held by forming a meniscus at the lower end of the groove 190. Then, the piezoelectric vibrator 180 is vibrated in the same manner as in the above-described embodiment, and the p-type A
The surface of the 1GaAs light guide layer 360 is etched. The state where the piezoelectric vibrator 180 is displaced downward is shown in FIG. 9B, and the p-type AlGaAs optical guide layer 360 is etched with the tip of the etching liquid 200 protruding from each groove 190. I understand. Since a plurality of slots 190 are provided in parallel, p-type Al
The surface of the GaAs light guide layer 360 is etched in a stripe shape to form the diffraction grating surface 370.

After the p-type AlGaAs optical guide layer 360 is etched in a stripe shape to a predetermined depth, the etching is terminated and the p-type AlGaAs optical guide layer 360 having a thickness of 1.5 μm is formed on the p-type AlGaAs optical guide layer 360 by liquid phase epitaxy. Type AlGaA
The s clad layer 380 and the p-type GaAs gap layer 390 having a thickness of 0.3 μm are epitaxially grown. At this time, the p-type AlGaAs optical guide layer 360 and the p-type AlGa
The interface of the As clad layer 380 is a diffraction grating surface 370. Next, the ridge portion is patterned by photolithography and etched, a silicon nitride film 400 is formed by plasma CVD method, and only the silicon nitride film 400 on the top of the ridge is removed by etching to form an implantation region. The ridge width, that is, the width of the implantation region is 3.
It was set to 0 μm. After that, a p-type ohmic electrode 420 made of Cr-Au is formed on the silicon nitride film 400 and the implantation region by vacuum vapor deposition, and the back surface of the n-type GaAs substrate 310 is lapped to a thickness of 100 μm. N-type ohmic electrode 410 made of AuGe-Au
Was vapor-deposited. Then, heat treatment was performed so that each electrode 410, 420 formed an ohmic contact, and the resonance surface was cleaved to complete the ridge type DFB semiconductor laser device.

Using the etching apparatus of this embodiment used for producing this semiconductor laser, another semiconductor laser element was produced again. As a result, a diffraction grating could be produced with good reproducibility, and a semiconductor laser element having the same performance was obtained. Was able to create. (Third invention): <Example 9> Cr / Au was continuously vapor-deposited on a quartz glass having a thickness of 0.5 mm by a resistance heating vapor deposition method so as to have a rate of 50 Å / 300 Å, to obtain a plating electrode. An X-ray resist (AZ-PN101: manufactured by Hoechst) was formed on the electrode to a thickness of 3 μm. This X-ray resist was irradiated with synchrotron radiation (X-ray) through an X-ray mask. The pattern of the photoselective absorption layer was hexagonal tortoise-shaped, and the dimension was 3 μm in side-to-side distance. After developing this,
Gold plating was performed to a thickness of 2.5 μm using a gold sulfite plating solution (Newtronex 309: manufactured by Nippon Electroplating Engineers) to form a light-shielding layer. The width of the light shielding layer was 0.5 μm. After removing the X-ray resist with a solvent, the electrode layer exposed by dry etching was peeled off. Next, after aligning the substrate and the perforated mask formed here at predetermined positions in a vacuum apparatus, copper phthalocyanine, which is a blue pigment, was vapor-deposited by resistance heating. At this time, the gap between the substrate and the perforated mask was about 10 μm. Subsequently, the position of the mask was changed and a green pigment, lead phthalocyanine, and a red pigment, Irgadine Red, were vapor deposited to complete the optical filter.

When the vapor deposition state of the pigment of the optical filter prepared by this method was observed by a scanning electron microscope and analyzed by EPMA, each pigment was distributed only at a predetermined position (hexagon) and within the area (hexagon). It was confirmed that they were evenly present. That is, a sufficiently high-definition optical filter could be formed. In addition, the manufacturing process could be greatly simplified compared to the conventional example. Furthermore, since the photolithography process, which conventionally required four times, is now performed once, the amount of defects due to dust and the like can be reduced. <Example 10> Cr / Cu was continuously vapor-deposited by EB vapor deposition on silica glass having a thickness of 0.5 mm so as to have a rate of 50 Å / 200 Å. On this electrode, an ultraviolet resist (OEBR-1000: manufactured by Tokyo Ohka Co., Ltd.) was formed to a thickness of 3 μm. This ultraviolet resist was irradiated with ultraviolet light through a mask. The pattern of the photoselective absorption layer is hexagonal tortoise-shaped, and the dimension is 4 μm in side-to-side distance.
And After developing this, gold sulfite plating solution (Newtr
Onex 309: manufactured by Nihon Electroplating Engineers Co., Ltd.) was used to perform gold plating to a thickness of 2.5 μm to form a light-shielding layer. Width of light-shielding layer is 1.0 μm
And After removing the X-ray resist with a solvent (methyl ethyl ketone), the exposed electrode layer was removed by dry etching (reaction gas Ar gas). Next, after aligning the substrate and the perforated mask formed here at predetermined positions in a vacuum apparatus, copper phthalocyanine, which is a blue pigment, was vapor-deposited by resistance heating. At this time, the gap between the substrate and the perforated mask was about 10 μm. Subsequently, the position of the mask was changed and a green pigment, lead phthalocyanine, and a red pigment, Irgadine Red, were vapor deposited to complete the optical filter.

When the deposition state of the pigment of the optical filter prepared by this method was observed by a scanning electron microscope and analyzed by EPMA, each pigment was distributed only at a predetermined position (hexagon) and within the area (hexagon). It was confirmed that they were evenly present. That is, a sufficiently high-definition optical filter could be formed. In addition, the manufacturing process could be greatly simplified compared to the conventional example. Furthermore, since the photolithography process, which conventionally required four times, is now performed once, the amount of defects due to dust and the like can be reduced. (Fourth Invention): <Embodiment 11> As shown in FIG. 17, Ti is used as another thin film 730 on a single crystal Si substrate 710 having a thickness of 0.5 mm.
0Å was vapor-deposited, and SiO ₂ having a thickness of 2 μm was formed as a thin film 720 thereon by a sputtering apparatus. Film formation conditions are 2 kW, pressure 4 mmTorr, sputtering gas Ar, substrate temperature 260
℃. By measuring the stress from the deformation of the substrate,
The stress of this SiO ₂ film was measured to be 5 × 10 ⁹ dyne / cm ² . Using a focused ion beam device, this Si
From the O ₂ film to a depth of 2 μm, using Ga ions, the width is 3
A notch was made in a “U” shape with a length of 00 μm and a length of 50 μm. When this substrate was heated to 300 ° C. and cooled to room temperature, it was confirmed that the right side of the U-shape was separated from the substrate and lifted up by several tens of μm as shown in FIG. By pressing it with a needle tip under an optical microscope, it was confirmed that it functions as a spring. <Example 12> Si produced under the same conditions as in Example 11
As shown in FIG. 19, vortex-shaped cuts having a gap of 50 μm were made in the O ₂ film by a focused ion beam device.
This sample also confirmed the function as a spring.

[0102]

According to the first aspect of the present invention, the conductive film is deposited on the outer periphery of the core material, and the conductive film deposited in the conductive film deposition step is spirally etched to form a spiral conductive wire. By including the etching step, a semiconductor process can be applied to manufacture a spiral member of the order of several tens to several hundreds of μm, and therefore, for example, a micro coil of the order of several tens to several hundreds of μm can be manufactured. it can.

Further, a spiral member is formed on the outer periphery of a thin wire having a diameter of 1 mm or less by using a resist drawing process using a light beam or an electron beam, and a spiral member is formed in the spiral member forming step. By including a fine line removing step of removing fine lines, a semiconductor process can be applied to manufacture a hollow spiral member having an order of several tens to several hundreds μm. Micro springs can be manufactured.

In the etching method of the second invention, the tip of the etching solution is periodically projected from one end of the fine conduit,
By contacting the tip of the etching liquid with the surface of the work piece during protrusion, the work piece is etched according to the cross-sectional shape of the fine conduit without applying photoresist to the work piece, making it easy and reproducible. There is an effect that a fine structure can be formed on the surface of the workpiece.

Further, the etching apparatus of the present invention has a concave portion for storing the etching liquid, a fine conduit pipe having one end facing the surface of the workpiece and the other end connected to the concave portion, and By providing a projecting means for periodically applying an action force to the etching liquid thus obtained, the workpiece is arranged at one end of the conduit with a minute distance and the projecting means is driven to periodically. Since the surface of the work piece is etched according to the shape of the conduit by causing the etching liquid to protrude from one end of the conduit, it is possible to easily and reproducibly process fine structures without applying photoresist to the work piece. The effect is that it can be formed on the surface of an object.

In the third aspect of the invention, in the production of the optical filter, the photoselective absorption layer is formed using a perforated mask. As a result, the manufacturing process can be greatly simplified as compared with the conventional example. Furthermore, since the photolithography process, which conventionally required four times, is now performed once, the amount of defects due to dust and the like can be reduced. In addition, it is possible to use a perforated mask for the formation of a high-aspect-ratio light-shielding pattern by X-ray lithography and electrolytic plating, and because of the high aspect ratio, pigments, etc. do not get mixed up in other areas. Therefore, the resolution of the image is high. By using these in the manufacture of optical filters, it has become possible to provide high-definition optical filters that were impossible with conventional methods.

Further, in the case of the conventional method of mixing a pigment or the like in the resist, the light characteristics of the resist material itself may deteriorate due to light absorption. However, according to the present invention, the photoselective absorption layer does not include the resist. Not because there is no problem above.

According to the fourth invention, according to the present invention, a spring as a mechanical element used in a micromechanical device can be easily manufactured by applying a semiconductor process without limiting the material.

[Brief description of drawings]

FIG. 1 is a schematic view illustrating a first embodiment of a method for manufacturing a spiral member according to the first invention, in which (A) to (J) are views showing respective steps.

FIG. 2 is a schematic view illustrating a second embodiment of the method for manufacturing the spiral member of the first invention.

3A and 3B are cross-sectional views illustrating a third embodiment of the method for manufacturing a spiral member according to the first invention, where FIG. 3A is a cross-sectional view for explaining a step of removing an insulating film, and FIG. 2C is a cross-sectional view for explaining the conductive film depositing step of FIG. 4C, and FIG. 7C is a cross-sectional view for explaining the second etching step.

FIG. 4 is a cross-sectional view illustrating a fifth embodiment of the method for manufacturing a spiral member according to the first invention, wherein (A) to (E) are cross-sectional views for explaining the spiral member forming step; F) is a schematic diagram for explaining a thin line removing step.

FIG. 5 is a view for explaining the sixth embodiment of the method for manufacturing the spiral member according to the first invention, wherein (A) to (F) are sectional views for explaining the spiral member forming step; [Fig. 4] is a schematic diagram for explaining a thin line removing step.

FIG. 6 is a diagram illustrating an etching apparatus of a second invention. (A) is a top view explaining the etching apparatus of one Example of this invention, (b) is the sectional view on the AA 'line of (a).

FIG. 7 is an A- explaining the operation of the etching apparatus of FIG.
It is a schematic sectional drawing in the A'line. FIG. 7A is a schematic cross-sectional view illustrating the operation when the free end of the piezoelectric vibrator is displaced downward. FIG. 7B is a schematic cross-sectional view illustrating the operation when the free end of the piezoelectric vibrator is displaced upward.

FIG. 8 is a top view illustrating an etching apparatus used in another embodiment of the second invention.

9 is a schematic cross-sectional view illustrating a step of manufacturing a semiconductor laser using the etching apparatus of FIG. (A),
9B is a schematic cross-sectional view illustrating a process of manufacturing a ridge type DFB semiconductor laser using the apparatus of FIG.

FIG. 10 is a perspective view illustrating a process of a ridge type DFB semiconductor laser.

FIG. 11 is a diagram illustrating a conventional method of forming a diffraction grating. (A)-(d) is a figure explaining each process of the conventional manufacturing method of a diffraction grating.

FIG. 12 is a schematic cross-sectional view illustrating an embodiment of the method for manufacturing an optical filter of the third invention. (A)-(g) is a figure which shows each process of a manufacturing method.

FIG. 13 is a cross-sectional view illustrating a manufacturing example of a conventional optical filter. (A)-(d) is a figure which shows each process of manufacture.

FIG. 14 is a partially enlarged side cross-sectional view illustrating a structural example of a light selective absorption layer of a conventional optical filter. (A) shows the case where the resolution is 10 to 20 μ, and (b) shows the case where the resolution is several μ or less.

FIG. 15 is a schematic cross sectional view for explaining the method for manufacturing the perforated mask used for carrying out the third invention. (A)-(e) is a figure which shows each process of a manufacturing method.

FIG. 16 is a schematic view illustrating an example of a spring producing method according to a fourth invention. (A)-(c) is a figure which shows each process of a manufacturing method.

FIG. 17 is a cross-sectional view illustrating an example of a spring manufacturing process product according to the fourth invention.

FIG. 18 is a side view illustrating an example of a spring obtained by carrying out the method of the fourth invention.

FIG. 19 is a plan view illustrating another example of the spring obtained by carrying out the method of the fourth invention.

[Explanation of symbols]

11 Coil Core Material 12 Insulating Film 13 Conductive Films 14, 24 Resist Film 15 Groove 16 Micro Coil 17 Protective Film 28 ₁ First Coil Area 28 ₂ Second Coil Area 31 Second Insulating Film 32 Second Conductive Film 33 Second micro coil 51, 61 Fine wire 52, 63 Resist 53, 62 Spring material 54, 64 Micro spring 110, 111 Substrate 112 Photoresist 113, 114 Laser light 115 Lattice photoresist 116 Diffraction grating 120 Recess 130 130 Through hole 140 Cantilever 150 Lower electrode film 160 Piezoelectric element film 170 Upper electrode film 180 Piezoelectric vibrator 190 Groove hole 200 Etching solution 210 Workpiece 310 n-type GaAs substrate 320 n-type GaAs buffer layer 330 n-type AlGaAs clad layer 340 Active layer 350 p-type AlGaAs barrier layer 60 p-type AlGaAs optical guide layer 370 diffraction grating surface 380 p-type AlGaAs cladding layer 390 p-type GaAs gap layer 400 silicon nitride layer 410 n-type ohmic electrode 420 p-type ohmic electrode 511 light transmissive substrate 512 electrode layer 513 resist layer 514 Light-shielding layer 515 One kind of light selective absorption layer 516 Hole 517 Perforated mask 518 Other kind of light selective absorption layer 519 Still other kind of light selective absorption layer 520 Optical filter 521 Si wafer 522 Silicon nitride film 523 Window 524 Resist pattern 525 Perforated mask 526 Hole 610 Transparent substrate 620 Light-shielding layer 630 Photosensitive material layer 640 First photoselective absorption layer 650 Second photoselective absorption layer 660 Third photoselective absorption layer 670 Color filter 710 Substrate 20 thin film 730 by a thin film 740 cut 750 cut pattern portion 760 spring L beam L ₁ first ray L ₂ second light beam p slit beginning q cut end r open portion

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification number Reference number within the agency FI Technical indication location H01F 5/00 E 4231-5E (72) Inventor Tsutomu Ikeda 3-30-2 Shimomaruko, Ota-ku, Tokyo No. Canon Inc. (72) Inventor Seijiro Kato 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.

Claims (21)

[Claims] 1. A conductive film deposition step of depositing a conductive film on the outer periphery of a core material, and an etching step of spirally etching the conductive film deposited in the conductive film deposition step to form a spiral conductive wire. A method of manufacturing a spiral member including. 2. An insulating film deposition step of depositing a conductive film on the outer periphery of the core material before the conductive film deposition step.
A method for manufacturing the spiral member described. 3. The method for manufacturing a spiral member according to claim 1, wherein the etching step includes a resist drawing process using two light rays or two electron beams. 4. A second insulating film deposition step of depositing a second insulating film on the outer circumference of the spiral conductive wire, and one of the second insulating film deposited in the second insulating film deposition step. An insulating film removing step of removing one end of the spiral conducting wire to expose one end of the spiral conducting wire; and one end of the spiral conducting wire exposed in the insulating film removing step and the second insulating film. A second conductive film deposition step of depositing a second conductive film on the outer periphery of the second conductive film, and a second spiral film formed by spirally etching the second insulating film deposited in the second conductive film deposition step. And a second etching step for forming a conductive wire.
A method for manufacturing the spiral member described. 5. The method for manufacturing a spiral member according to claim 4, wherein the etching step and the second etching step each include a resist drawing process using two light rays or two electron beams. 6. A third insulating film deposition step of depositing a third insulating film on the outer circumference of the second spiral conductive wire, and the third insulating film deposited in the third insulating film deposition step. A second insulating film removal step of removing the other end of the second spiral conductive wire to expose the other end of the second spiral conductive wire; and the second spiral exposed in the second insulating film removal step. Conductive film depositing step of depositing a third conductive film on the outer periphery of the other end of the conductive wire and the third insulating film, and the third conductive film depositing step of the third conductive film depositing step. 5. The method for manufacturing a spiral member according to claim 4, further comprising a third etching step of forming a third spiral conductive wire by spirally etching the insulating film. 7. The spiral member according to claim 6, wherein the etching step, the second etching step, and the third etching step each include a resist drawing process using two light beams or two electron beams. Production method. 8. A spiral member forming step of forming a spiral member on the outer periphery of a thin wire having a diameter of 1 mm or less by using a resist drawing process using a light beam or an electron beam, and the spiral member forming step in the spiral member forming step. And a fine wire removing step of removing the thin wire thus formed. 9. An etching method for finely etching a surface of a workpiece, wherein the surface of the workpiece and one end of a fine conduit are arranged to face each other with a minute distance, and an etching solution is introduced into the conduit. Supply, the tip of the etching solution comes into contact with the surface when protruding, the tip does not come into contact with the surface when not protruding, and the etching solution does not substantially flow out from the one end, An etching method in which a force is periodically applied to the etching solution to cause the tip of the etching solution to project periodically from the one end. 10. An etching method for finely etching a surface of a workpiece, wherein the surface of the workpiece and one end of a fine conduit are arranged to face each other with a minute distance, and an etching solution is introduced into the conduit. By supplying the surface tension and the capillary force, the tip of the etching solution is held at any part of the conduit, and a pressure is periodically applied to the etching solution while maintaining the state where the tip is held, Etching method in which the tip is made to protrude from the one end and is brought into contact with the surface. 11. The other end of the conduit is connected to an etching solution reservoir, and when the tip of the etching solution does not project, the tip retreats to the vicinity of the other end.
The etching method according to. 12. An etching apparatus used when performing fine etching on a surface of a workpiece, comprising: a recess for storing an etching solution; one end formed so as to face the surface of the workpiece; It has a fine conduit connected to the recess, and a protrusion means for periodically applying an action force to the etching liquid stored in the recess, and by driving the protrusion means, it is substantially possible from the one end. An etching apparatus in which the tip of the etching solution is periodically projected from the one end without being made to flow out. 13. The etching according to claim 12, wherein the projecting means comprises a cantilever and a means for displacing the cantilever, and by displacing the cantilever, an acting force is applied to the etching liquid stored in the recess. apparatus. 14. The etching apparatus according to claim 13, wherein the means for displacing the cantilever comprises a piezoelectric thin film provided on the cantilever and a pair of electrodes for applying a voltage to the piezoelectric thin film. 15. The etching apparatus according to claim 12, wherein a conduit is provided below the recess, and the tip of the etching liquid is held at any part of the conduit by surface tension and capillary force. 16. The etching apparatus according to claim 12, wherein the recess, the conduit, and the protruding means are integrally formed on the substrate. 17. A method of manufacturing an optical filter comprising a light-transmissive substrate and a photoselective absorption layer of a predetermined type repeatedly arranged in a mosaic pattern on the light-transmissive substrate having (1) an electrode layer formed on the surface thereof. A step of forming a resist pattern by lithography, using a resist sensitive to X-rays or ultraviolet rays to remove the resist portion corresponding to the light-shielding layer, (2)
By plating with the electrode layer of the substrate on which the resist pattern is formed as an electrode, a light-shielding layer of plated metal is formed on the electrode layer, and then the resist pattern on the substrate and the electrode layer under the resist pattern are removed. A step of forming a substrate having a light-shielding layer, and (3) superposing holes of a perforated mask corresponding to the one type of photoselective absorption layer arrangement on the planned portion of the one type of photoselective absorption layer to be formed. A predetermined number of times of depositing one kind of dye or pigment, and then moving the mask to overlap the holes of the mask with other parts of the photoselective absorption layer to be formed and deposit another kind of dye or pigment. A method of manufacturing an optical filter, which comprises the steps of repeating (1), (2) and (3). 18. The method for manufacturing an optical filter according to claim 17, wherein the light shielding layer is formed of a gold plating film. 19. After forming a thin film having a tensile stress on a substrate, a band-shaped cut pattern portion opened to the thin film is formed, and then at least the cut pattern portion is heated or cooled to remove the cut pattern portion from the substrate. A method for producing a micro spring, which comprises forming a spring in which a substrate and a cut pattern portion are connected at a peeled and opened portion. 20. The tensile stress of the thin film is 10 ^{9 to} 5 × 10 ^10.
20. The method for producing a microspring according to claim 19, which is dyne / cm ² . 21. The method for producing a microspring according to claim 19, wherein the cut pattern portion is formed by cutting a thin film by a focused ion beam method.