JPH0648865Y2 - Heat sink fin mounting mechanism for semiconductor devices - Google Patents

Heat sink fin mounting mechanism for semiconductor devices

Info

Publication number
JPH0648865Y2
JPH0648865Y2 JP1989091910U JP9191089U JPH0648865Y2 JP H0648865 Y2 JPH0648865 Y2 JP H0648865Y2 JP 1989091910 U JP1989091910 U JP 1989091910U JP 9191089 U JP9191089 U JP 9191089U JP H0648865 Y2 JPH0648865 Y2 JP H0648865Y2
Authority
JP
Japan
Prior art keywords
semiconductor device
heat dissipation
dissipation fin
outer frame
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1989091910U
Other languages
Japanese (ja)
Other versions
JPH0332432U (en
Inventor
篤雄 小西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1989091910U priority Critical patent/JPH0648865Y2/en
Publication of JPH0332432U publication Critical patent/JPH0332432U/ja
Application granted granted Critical
Publication of JPH0648865Y2 publication Critical patent/JPH0648865Y2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Description

【考案の詳細な説明】 〈産業上の利用分野〉 本考案は、樹脂封止型電力用半導体装置に空冷用放熱フ
インを取付けるための半導体装置の放熱フイン取付機構
に関する。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a heat dissipation fin mounting mechanism for a semiconductor device for mounting an air cooling heat dissipation fin on a resin-sealed power semiconductor device.

〈従来技術〉 一般に、樹脂封止型電力用半導体装置は、その駆動時に
高熱を発するため、冷却用放熱フインが装着される。従
来の半導体装置においては、第7〜12図の如く、放熱フ
インがねじ締めにより固定されている。
<Prior Art> Generally, a resin-sealed power semiconductor device emits high heat when it is driven, and therefore, a cooling radiating fin is mounted. In the conventional semiconductor device, the heat radiation fins are fixed by screwing as shown in FIGS.

すなわち、樹脂封止工程時に、半導体装置1の内部を外
部より遮断するために熱硬化封止樹脂(エポキシ樹脂)
3を充填し熱硬化させている。このとき、熱硬化封止樹
脂3は硬化収縮を起こす(エポキシ樹脂は、一般に、長
手方向に対し0、2%〜1、0%硬化収縮を起こす。た
だし、これは加熱条件にも左右される)。そのため、半
導体装置自身が弓なりに変形するおそれがある。したが
つて、第11図の如く、外枠4に梁等の補強部材5を補う
か、裏面の金属ベース基板6を半導体装置1とほぼ同じ
面積にするなどの対策を施こさなければならない。
That is, a thermosetting encapsulation resin (epoxy resin) is used to shield the inside of the semiconductor device 1 from the outside during the resin encapsulation process.
3 is filled and heat-cured. At this time, the thermosetting encapsulating resin 3 causes cure shrinkage (epoxy resin generally causes 0,2% to 1,0% cure shrinkage in the longitudinal direction. However, this also depends on heating conditions. ). Therefore, the semiconductor device itself may be deformed like a bow. Therefore, as shown in FIG. 11, it is necessary to take measures such as supplementing the outer frame 4 with a reinforcing member 5 such as a beam or making the metal base substrate 6 on the back surface have substantially the same area as the semiconductor device 1.

次に、上記樹脂封止工程が完了した半導体装置1を空冷
用放熱フイン2にセツトし、ねじ7にて締め付け固定を
行う。このときに、放熱効果をよくするため、金属ベー
ス基板6側、もしくは空冷用放熱フイン2側に放熱用シ
リコングリスを塗布しなければならない。
Next, the semiconductor device 1 on which the resin sealing step has been completed is set on the air-cooling heat radiation fins 2 and tightened and fixed by the screws 7. At this time, in order to improve the heat dissipation effect, the heat dissipation silicon grease must be applied to the metal base substrate 6 side or the air cooling heat dissipation fin 2 side.

〈考案が解決しようとする課題〉 第7〜10図の如く、半導体装置1を空冷用放熱フイン2
に取り付ける場合、半導体装置1の裏面の金属ベース基
板6に放熱用シリコングリスを塗布し、基板6を空冷用
放熱フイン2にセツトし、その後、ねじ7に締め付け固
定している。しかし、ねじ7で、強制的に金属ベース基
板6を空冷用放熱フイン2に締め付けているため、金属
ベース基板6がある量の反りを持つていた場合、金属ベ
ース基板6にねじ締めの反力としせん断力が加わる事に
なり、半導体装置内部の電力半導体素子1aにもひずみが
加わり、ときには電力半導体素子1aの破壊にもつなが
る。
<Problems to be Solved by the Invention> As shown in FIGS. 7 to 10, the semiconductor device 1 is provided with a cooling fin 2 for air cooling.
In the case of mounting on the metal base substrate 6 on the back surface of the semiconductor device 1, heat-radiating silicon grease is applied, the substrate 6 is set on the heat-radiating fin 2 for air cooling, and then it is fastened and fixed to the screw 7. However, since the metal base substrate 6 is forcibly fastened to the air-conditioning heat radiating fins 2 by the screw 7, if the metal base substrate 6 has a certain amount of warp, the reaction force of screw tightening on the metal base substrate 6 is exerted. As a result, a shearing force is applied, strain is also applied to the power semiconductor element 1a inside the semiconductor device, and sometimes the power semiconductor element 1a is destroyed.

また、ねじ7には常に反力が加わつており、長期保存に
対しねじ7のゆるみ発生することもある。
Further, the reaction force is always applied to the screw 7, and the screw 7 may loosen during long-term storage.

さらに、半導体装置1の作動時の内部発熱が金属ベース
基板6を介してのみしか空冷用放熱フイン2に伝わら
ず、放熱効率も悪くなる。このため空冷用放熱フイン2
の大型化も余儀なくされる。
Further, internal heat generated during operation of the semiconductor device 1 is transmitted to the air-cooling heat dissipation fins 2 only through the metal base substrate 6, and heat dissipation efficiency also deteriorates. Therefore, the cooling fin 2 for air cooling
It is inevitable to upsize.

本考案は、上記に鑑み、半導体装置に放熱フインを装着
する際に、ねじ締めを必要とせず、電力半導体素子の破
壊を防止し、半導体装置の信頼性を向上させ、放熱フイ
ンの小型化および放熱フインの取付工程の簡素化が実現
できる半導体装置の放熱フイン取付機構の提供を目的と
する。
In view of the above, the present invention does not require screw fastening when mounting a heat dissipation fin on a semiconductor device, prevents destruction of a power semiconductor element, improves the reliability of the semiconductor device, and reduces the size of the heat dissipation fin. An object of the present invention is to provide a heat dissipation fin mounting mechanism for a semiconductor device, which can realize a simplified heat dissipation fin mounting process.

〈課題を解決するための手段〉 上記目的を達成するために、本考案による半導体装置の
放熱フイン取付機構は、第1〜4図の如く、放熱フイン
15と該放熱フイン15に形成された凹部17に挿入載置さ
れ、かつ挿入載置された状態で外枠11内の半導体素子12
が熱硬化封止樹脂13により樹脂封止される半導体装置14
とからなる構造とした。
<Means for Solving the Problems> In order to achieve the above-mentioned object, the heat dissipation fin mounting mechanism of the semiconductor device according to the present invention has a heat dissipation fin as shown in FIGS.
15 and the semiconductor element 12 in the outer frame 11 inserted and mounted in the recess 17 formed in the heat dissipation fin 15.
A semiconductor device 14 in which the resin is sealed with a thermosetting sealing resin 13
The structure consists of and.

〈作用〉 上記課題解決手段において、半導体内部素子12を外枠11
に固定し、これらを放熱フイン15の凹部17に挿入する。
<Operation> In the above means for solving problems, the semiconductor internal element 12 is provided with the outer frame 11
Then, these are inserted into the recesses 17 of the heat dissipation fins 15.

その後、半導体内部素子12と外気とを遮断するために、
外枠11内に熱硬化封止樹脂13の充填を行ない樹脂封止す
る。
After that, in order to shut off the semiconductor internal element 12 and the outside air,
A thermosetting sealing resin 13 is filled in the outer frame 11 for resin sealing.

このとき、熱硬化封止樹脂13に硬化収縮作用がおこり、
硬化収縮作用に伴なつて外枠11が弓なりに反る。この反
りの力で外枠11が放熱フイン15の凹部17に挟み付けら
れ、半導体装置14が放熱フイン15に固定される。
At this time, a curing shrinkage action occurs in the thermosetting sealing resin 13,
The outer frame 11 warps in a bow shape due to the hardening and shrinking action. Due to this warping force, the outer frame 11 is sandwiched between the recesses 17 of the heat radiation fins 15, and the semiconductor device 14 is fixed to the heat radiation fins 15.

このように、放熱フイン15に半導体装置14を挿入載置す
るための凹部17を設け、凹部17に半導体装置14を挿入
後、半導体内部素子12を熱硬化封止樹脂13で樹脂封止し
ているので、半導体装置14を放熱フイン15に挿入固定す
る際に、熱硬化封止樹脂13の硬化収縮特性による外枠11
の反りを利用して固定でき、放熱フインにねじ締め無し
で半導体装置を固定することができる。
Thus, the heat dissipation fin 15 is provided with the recess 17 for inserting and mounting the semiconductor device 14, and after inserting the semiconductor device 14 into the recess 17, the semiconductor internal element 12 is resin-sealed with the thermosetting sealing resin 13. Therefore, when the semiconductor device 14 is inserted and fixed in the heat dissipation fin 15, the outer frame 11 due to the curing shrinkage characteristic of the thermosetting sealing resin 13 is used.
The semiconductor device can be fixed to the heat dissipation fin without screwing.

〈実施例〉 以下、本考案の一実施例を図面に基づき説明する。<Embodiment> An embodiment of the present invention will be described below with reference to the drawings.

第1図は本考案の一実施例の取付機構を利用して半導体
装置に放熱フインを取り付けた状態を示す断面図、第2
図は同じくその正面図、第3図は同じくその平面図、第
4図は同じくその側面図、第5図は同じく放熱フインの
斜視図、第6図は同じく封止樹脂の硬化収縮特性による
反りの状態を示す図である。
FIG. 1 is a sectional view showing a state in which a heat dissipation fin is attached to a semiconductor device by using the attachment mechanism of the embodiment of the present invention.
The same figure shows the same front view, FIG. 3 shows the same plan view, FIG. 4 shows the same side view, FIG. 5 shows the same heat radiating fin perspective view, and FIG. It is a figure which shows the state of.

図示の如く、本実施例の半導体装置の放熱フイン取付機
構は、外枠11内の半導体内部素子12を熱硬化封止樹脂13
により樹脂封止して成る半導体装置14に、放熱フイン15
を取り付けるためのものであって、前記放熱フイン15に
半導体装置14を挿入載置するための凹部17が形成され、
該凹部17に熱硬化封止樹脂13の硬化収縮特性による外枠
11の反りを利用して半導体装置14が挿入固定されたもの
である。
As shown in the figure, in the heat dissipation fin mounting mechanism of the semiconductor device of this embodiment, the semiconductor internal element 12 in the outer frame 11 is sealed with the thermosetting sealing resin 13.
A semiconductor device 14 formed by resin sealing with
For mounting the semiconductor device 14 in the heat dissipation fin 15 is formed with a recess 17,
An outer frame formed by the curing shrinkage characteristics of the thermosetting sealing resin 13 in the recess 17
The semiconductor device 14 is inserted and fixed by utilizing the warp of 11.

前記外枠11は、第1〜4図の如く、半導体内部素子12が
内嵌されるよう上下方向に貫通する半導体内部素子挿入
用開口18を有する箱状に形成されている。該外枠11の両
側壁の下部には、放熱フイン15の凹部17に半導体装置14
を挿入固定する際、第6図の如く、封止樹脂13の硬化収
縮特性によりA方向に反る突部19が外方向に突出して形
成されている。
As shown in FIGS. 1 to 4, the outer frame 11 is formed in a box shape having a semiconductor internal element insertion opening 18 that vertically penetrates so that the semiconductor internal element 12 is fitted therein. The semiconductor device 14 is formed in the recess 17 of the heat dissipation fin 15 at the bottom of both side walls of the outer frame 11.
6 is inserted and fixed, a protrusion 19 which is warped in the A direction is formed to protrude outward due to the curing and shrinking characteristics of the sealing resin 13, as shown in FIG.

前記半導体内部素子12は、第1図の如く、金属ベース基
板21と、金属ベース基板21にヒートスプレッタ22を介し
て搭載される電力半導体素子23と、金属ベース基板21に
接続され外部に入出力するタブ端子24等とから構成され
ている。該半導体内部素子12は、金属ベース基板21が外
枠11に固定され、外枠11内にシリコンオイル25が注入さ
れた後、熱硬化封止樹脂(エポキシ樹脂)13により樹脂
封止されている。これにより、金属ベース基板21は、第
6図の如く、封止樹脂13の硬化収縮特性CによりB方向
に反る。なお、第1図中、26は電力半導体素子23と金属
ベース基板21とを接続するボンデイングワイヤーであ
る。
As shown in FIG. 1, the semiconductor internal device 12 is connected to the metal base substrate 21, the power semiconductor device 23 mounted on the metal base substrate 21 via the heat spreader 22, and connected to the metal base substrate 21 to input / output externally. It is composed of tab terminals 24 and the like. In the semiconductor internal element 12, the metal base substrate 21 is fixed to the outer frame 11, silicon oil 25 is injected into the outer frame 11, and then the resin is sealed with a thermosetting sealing resin (epoxy resin) 13. . As a result, the metal base substrate 21 warps in the B direction due to the curing shrinkage characteristic C of the sealing resin 13, as shown in FIG. In FIG. 1, reference numeral 26 is a bonding wire that connects the power semiconductor element 23 and the metal base substrate 21.

前記放熱フイン15は、その材料として通常のアルミニウ
ムの押出し型剤が用いられ、第5図の如く、放熱フイン
本体15aと、該本体15a下部に形成され同一重量で放熱効
果を高めるための複数ひだ状突起27とから構成されてい
る。
The heat dissipation fin 15 is made of a normal aluminum extruding agent as its material, and as shown in FIG. And projections 27.

前記凹部17は、放熱フイン本体15aの中央部に配されて
おり、本体15aの前後方向に貫通して設けられている
(第5図参照)。該凹部17は、半導体内部素子12(金属
ベース基板21)が挿入固定される半導体内部素子用載置
溝28と、該載置溝28から左右方向に連続して形成され外
枠11の突部19が挿入固定される外枠用案内溝29とから構
成されている。該案内溝29の幅方向Dは、第1図の如
く、外枠11を凹部17に固定する際、外枠11が樹脂13の硬
化収縮特性による反りを利用して固定できるよう、外枠
11の突部19と隙間を最小限にするよう設定されている。
The recess 17 is arranged in the center of the heat dissipation fin body 15a, and is provided so as to penetrate the body 15a in the front-rear direction (see FIG. 5). The recess 17 is formed with a semiconductor internal element mounting groove 28 into which the semiconductor internal element 12 (metal base substrate 21) is inserted and fixed, and a projection of the outer frame 11 which is formed continuously from the mounting groove 28 in the left-right direction. An outer frame guide groove 29 in which 19 is inserted and fixed is formed. In the width direction D of the guide groove 29, as shown in FIG. 1, when the outer frame 11 is fixed to the recess 17, the outer frame 11 can be fixed by using the warp due to the curing shrinkage property of the resin 13.
It is set to minimize the gap between the protrusions 19 of the eleven.

次に、半導体装置14と放熱フイン15との取り付け手順を
第1,6図に基づいて説明する。
Next, the procedure for attaching the semiconductor device 14 and the heat dissipation fin 15 will be described with reference to FIGS.

第1図の如く、樹脂封止されていない半導体内部素子12
を外枠11に固定し、これらを空冷用放熱フイン15の凹部
17に挿入する。このとき、外枠11および半導体内部素子
12を放熱フイン15に装着する前に、放熱フイン15をある
程度加熱すると、膨張して挿入しやすくなる。
As shown in FIG. 1, the semiconductor internal element 12 not resin-sealed
Are fixed to the outer frame 11, and these are recessed in the cooling fin 15 for air cooling.
Insert in 17. At this time, the outer frame 11 and the semiconductor internal element
If the heat dissipating fins 15 are heated to some extent before the heat dissipating fins 15 are attached to the heat dissipating fins 15, they will expand and become easier to insert.

その後、半導体内部素子12と外気とを遮断するために、
外枠11内に熱硬化封止樹脂13の充填を行ない樹脂封止す
る。
After that, in order to shut off the semiconductor internal element 12 and the outside air,
A thermosetting sealing resin 13 is filled in the outer frame 11 for resin sealing.

このとき、熱硬化封止樹脂13に硬化収縮作用が起こる
(第6図中C参照)。この硬化収縮作用により、外枠11
の突部19が上部に引張られ、放熱フイン15の凹部17の案
内溝29へ押えつけることになる。また、その反力で金属
ベース基板21も放熱フイン15の凹部7の載置溝28を下方
(B方向)へ押えつけることになる(この状態を第6図
に示す。) すなわち、半導体装置14の外枠11が熱硬化封止樹脂13の
硬化収縮により弓なりに反り、この反りの力で外枠11が
空冷用放熱フイン15の凹部17に挟み付けられる。これに
より、半導体装置14は空冷用放熱フイン15に固定され
る。
At this time, the thermosetting sealing resin 13 has a curing shrinkage action (see C in FIG. 6). Due to this curing shrinkage action, the outer frame 11
The protrusion 19 is pulled upward and pressed against the guide groove 29 of the recess 17 of the heat dissipation fin 15. Further, the reaction force also presses down the mounting groove 28 of the recessed portion 7 of the heat dissipation fin 15 downward (direction B) (this state is shown in FIG. 6), that is, the semiconductor device 14. The outer frame 11 warps in a bow shape due to the curing shrinkage of the thermosetting sealing resin 13, and the warping force causes the outer frame 11 to be sandwiched in the recess 17 of the air-cooling heat dissipation fin 15. As a result, the semiconductor device 14 is fixed to the heat radiation fins 15 for air cooling.

このように、放熱フイン15に半導体装置14を挿入載置す
るための凹部17を設け、凹部17に半導体装置14を挿入
後、半導体内部素子12を熱硬化封止樹脂13で樹脂封止し
ているので、半導体装置14を放熱フイン15に挿入固定す
る際に、熱硬化封止樹脂13の硬化収縮特性による外枠11
の反りを利用して固定でき、放熱フインにねじ締め無し
で半導体装置を固定することができる。
Thus, the heat dissipation fin 15 is provided with the recess 17 for inserting and mounting the semiconductor device 14, and after inserting the semiconductor device 14 into the recess 17, the semiconductor internal element 12 is resin-sealed with the thermosetting sealing resin 13. Therefore, when the semiconductor device 14 is inserted and fixed in the heat dissipation fin 15, the outer frame 11 due to the curing shrinkage characteristic of the thermosetting sealing resin 13 is used.
The semiconductor device can be fixed to the heat dissipation fin without screwing.

したがつて、従来のように、ねじ締め時に発生するせん
断力が加わらなくなり、半導体装置内部の電力半導体素
子にもひずみが加わらず、半導体素子が破壊されること
はない。
Therefore, unlike the conventional case, the shearing force generated at the time of screw tightening is not applied, the strain is not applied to the power semiconductor element inside the semiconductor device, and the semiconductor element is not destroyed.

また、従来では、ねじ締めにより放熱フインと半導体装
置を固定しているので、ねじには常に反力が加わり、長
期保存に対しねじの緩みが発生するが、本考案では、ね
じ締めを必要としないので、ねじの緩みによるがたつき
を防止でき、放熱フインを長期にわたつて固定できる。
したがつて、半導体装置自身の信頼性が向上する。
Further, conventionally, since the heat dissipation fin and the semiconductor device are fixed by screw tightening, a reaction force is always applied to the screw and the screw loosens for long-term storage.However, the present invention requires screw tightening. Since it does not, rattling due to loosening of screws can be prevented, and the heat radiation fin can be fixed over a long period of time.
Therefore, the reliability of the semiconductor device itself is improved.

さらに、半導体装置が空冷用放熱フイン内部に埋め込ま
れた構造になっているので、半導体装置の作動時の内部
発熱が外枠および金属ベース基板を介して放熱フインに
伝わり、より効率的な放熱効果も期待でき、半導体装置
の信頼も向上し、放熱フインも小型化できる。
Furthermore, since the semiconductor device has a structure embedded inside the heat dissipation fin for air cooling, internal heat generated during operation of the semiconductor device is transmitted to the heat dissipation fin through the outer frame and the metal base substrate, resulting in a more efficient heat dissipation effect. The reliability of the semiconductor device can be improved and the heat dissipation fin can be miniaturized.

さらにまた、樹脂封止工程および半導体装置と空冷用放
熱フイン取付工程を同時に行うことができるので、従来
のねじ締め工程が削減でき、しかも、放熱フインの取付
工程が簡単となる。
Furthermore, since the resin sealing step and the semiconductor device and air-cooling heat radiation fin mounting step can be performed at the same time, the conventional screw tightening step can be reduced and the heat radiation fin mounting step can be simplified.

なお、本考案は、上記実施例に限定されるものではな
く、本考案の範囲内で上記実施例に多くの修正および変
更を加え得ることは勿論である。
It should be noted that the present invention is not limited to the above embodiments, and it goes without saying that many modifications and changes can be made to the above embodiments within the scope of the present invention.

例えば、上記実施例の放熱フインは複数のひだ状の突起
が形成されているが、半導体装置の使用条件および使用
目的に応じて異つた形状のものであつてもよい。
For example, although the heat dissipation fin of the above-described embodiment is formed with a plurality of pleated protrusions, it may have different shapes depending on the usage conditions and purpose of use of the semiconductor device.

また、金属ベース基板に代わり、セラミツク系付基板を
使用してもよい。
Further, instead of the metal base substrate, a substrate with a ceramic system may be used.

〈考案の効果〉 以上の説明から明らかな通り、本考案によると、放熱フ
インに半導体装置を挿入載置するための凹部を設け、凹
部に半導体装置を挿入後、半導体内部素子を熱硬化封止
樹脂で樹脂封止しているので、半導体装置を放熱フイン
に挿入固定する前に、熱硬化封止樹脂の硬化収縮特性に
よる外力の反りを利用して固定でき、放熱フインにねじ
締め無しで半導体装置を固定することができる。
<Effects of the Invention> As is apparent from the above description, according to the present invention, the heat dissipation fin is provided with the recess for inserting and mounting the semiconductor device, and after the semiconductor device is inserted into the recess, the semiconductor internal element is thermoset and sealed. Since it is resin-sealed with a resin, before the semiconductor device is inserted and fixed in the heat dissipation fin, it can be fixed by using the warp of external force due to the curing shrinkage property of the thermosetting encapsulation resin, and the semiconductor can be fixed in the heat dissipation fin without screws. The device can be fixed.

したがつて、従来のように、ねじ締め時に発生するせん
断力が加わらなくなり、半導体装置内部の電力半導体素
子にもひずみが加わらず、半導体素子が破壊されずに済
み、また、ねじの緩みによるがたつきを防止でき、放熱
フインを長期にわたつて固定でき、半導体装置自身の信
頼性が向上する。
Therefore, as in the past, the shearing force generated during screw tightening is no longer applied, the power semiconductor element inside the semiconductor device is not distorted, the semiconductor element is not destroyed, and the looseness of the screw causes Rattle can be prevented, the heat dissipation fin can be fixed over a long period of time, and the reliability of the semiconductor device itself is improved.

また、半導体装置が放熱フイン内部に埋め込まれた構造
になるので、半導体装置の作動時の内部発熱が外枠およ
び金属ベース基板を介して放熱フインに伝わり、より効
率的な放熱効果も期待でき、半導体装置の信頼も向上
し、放熱フインも小型化できる。
Further, since the semiconductor device has a structure embedded inside the heat dissipation fin, internal heat generated during operation of the semiconductor device is transmitted to the heat dissipation fin through the outer frame and the metal base substrate, and a more efficient heat dissipation effect can be expected. The reliability of the semiconductor device is improved, and the heat dissipation fin can be downsized.

さらに、樹脂封止工程および半導体装置と放熱フイン取
付工程を同時に行うことができるので、従来のねじ締め
工程が削減でき、しかも放熱フインの取付工程が簡単と
なるといつた優れた効果がある。
Further, since the resin sealing step and the semiconductor device and heat radiation fin attaching step can be performed at the same time, the conventional screw tightening step can be reduced, and the heat radiation fin attaching step can be simplified, which has an excellent effect.

【図面の簡単な説明】[Brief description of drawings]

第1図は本考案の一実施例の取付機構を利用して半導体
装置に放熱フインを取り付けた状態を示す断面図、第2
図は同じくその正面図、第3図は同じくその平面図、第
4図は同じくその側面図、第5図は同じく放熱フインの
斜視図、第6図は同じく封止樹脂の硬化収縮特性による
反りの状態を示す図である。第7図は従来のねじ締めに
より半導体装置に放熱フインを取り付けた例を示す正面
図、第8図は同じくその側面図、第9図は同じくその平
面図、第10図は同じくその断面図、第11図は同じくその
半導体装置の正面図、第12図は同じくその放熱フインの
斜視図である。 11:外枠、12:半導体内部素子、13:熱硬化封止樹脂、14:
半導体装置、15:放熱フイン、17:凹部。
FIG. 1 is a sectional view showing a state in which a heat dissipation fin is attached to a semiconductor device by using the attachment mechanism of the embodiment of the present invention.
The same figure shows the same front view, FIG. 3 shows the same plan view, FIG. 4 shows the same side view, FIG. 5 shows the same heat radiating fin perspective view, and FIG. It is a figure which shows the state of. FIG. 7 is a front view showing an example in which a heat dissipation fin is attached to a semiconductor device by conventional screw fastening, FIG. 8 is a side view thereof, FIG. 9 is a plan view thereof, and FIG. 10 is a sectional view thereof. FIG. 11 is a front view of the semiconductor device, and FIG. 12 is a perspective view of the heat dissipation fin. 11: Outer frame, 12: Semiconductor internal element, 13: Thermosetting sealing resin, 14:
Semiconductor device, 15: heat dissipation fin, 17: recess.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】放熱フインと、該放熱フインに形成された
凹部に挿入載置され、かつ挿入載置された状態で外枠内
の半導体素子が熱硬化封止樹脂により樹脂封止される半
導体装置とからなる半導体装置の放熱フイン取付機構。
1. A semiconductor device in which a heat radiation fin and a semiconductor element in an outer frame are inserted and mounted in a concave portion formed in the heat radiation fin, and a semiconductor element in an outer frame is resin-sealed with a thermosetting sealing resin in a state of being inserted and mounted. A heat dissipation fin mounting mechanism for a semiconductor device including the device.
JP1989091910U 1989-08-03 1989-08-03 Heat sink fin mounting mechanism for semiconductor devices Expired - Fee Related JPH0648865Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989091910U JPH0648865Y2 (en) 1989-08-03 1989-08-03 Heat sink fin mounting mechanism for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989091910U JPH0648865Y2 (en) 1989-08-03 1989-08-03 Heat sink fin mounting mechanism for semiconductor devices

Publications (2)

Publication Number Publication Date
JPH0332432U JPH0332432U (en) 1991-03-29
JPH0648865Y2 true JPH0648865Y2 (en) 1994-12-12

Family

ID=31641369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989091910U Expired - Fee Related JPH0648865Y2 (en) 1989-08-03 1989-08-03 Heat sink fin mounting mechanism for semiconductor devices

Country Status (1)

Country Link
JP (1) JPH0648865Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101043369B1 (en) * 2009-03-06 2011-06-21 현대로템 주식회사 Sensing system of the state of fire extinguisher

Also Published As

Publication number Publication date
JPH0332432U (en) 1991-03-29

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