JPH0645392A - Detecting method for bonding position of wire bonding apparatus - Google Patents
Detecting method for bonding position of wire bonding apparatusInfo
- Publication number
- JPH0645392A JPH0645392A JP19565792A JP19565792A JPH0645392A JP H0645392 A JPH0645392 A JP H0645392A JP 19565792 A JP19565792 A JP 19565792A JP 19565792 A JP19565792 A JP 19565792A JP H0645392 A JPH0645392 A JP H0645392A
- Authority
- JP
- Japan
- Prior art keywords
- electrode pad
- tool
- metal wire
- pad portion
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
- H01L2224/8513—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、リードフレームに搭載
した半導体チップ等の第１ボンディング箇所と、リード
フレームにおけるリード端子等の第２ボンディング箇所
との間を、細い金属線にてワイヤーボンディングするよ
うにしたワイヤーボンディングにおいて、前記第１ボン
ディング箇所に対する金属線のボンディング位置を正確
に検出する方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention wire-bonds a thin metal wire between a first bonding portion such as a semiconductor chip mounted on a lead frame and a second bonding portion such as a lead terminal on the lead frame. In such wire bonding, the present invention relates to a method for accurately detecting the bonding position of the metal wire with respect to the first bonding position.
【０００２】[0002]
【従来の技術】一般に、ワイヤーボンディングは、例え
ば、特願昭６２−１３６８３６号公報等に記載され、且
つ、図４に示すように、金属線２を挿通したキャピラリ
ツール１をツールホーン３に対して着脱自在に取付け、
このキャピラリツール１を、ツールホーン３によって、
半導体チップ４における電極パッド部５とリード端子６
との間を矢印Ａで示すように横方向に往復動すると共
に、この往復動の両端において矢印Ｂで示すように上下
動するように構成することにより、キャピラリツール１
に挿通した金属線２の先端におけるボール部２ａを、先
づ、半導体チップ４における電極パッド部５にボンディ
ングし、次いで、リード端子６に対してボンディングす
るようにしている。2. Description of the Related Art Generally, wire bonding is described in, for example, Japanese Patent Application No. 62-136836, and as shown in FIG. 4, a capillary tool 1 having a metal wire 2 inserted therein is attached to a tool horn 3. Attach and detach freely,
This capillary tool 1 is used by the tool horn 3
Electrode pad portion 5 and lead terminal 6 in the semiconductor chip 4
The capillary tool 1 is configured so as to reciprocate laterally in the direction indicated by arrow A and move up and down at both ends of this reciprocation as indicated by arrow B.
The ball portion 2a at the tip of the metal wire 2 inserted in the above is first bonded to the electrode pad portion 5 of the semiconductor chip 4, and then to the lead terminal 6.
【０００３】そして、このワイヤーボンディングに際し
ては、キャピラリツール１と半導体チップ４との間にお
ける相対的な位置関係を、キャピラリツール１に挿通し
た金属線２を半導体チップ４の電極パッド部５における
幅寸法Ｗ及び長さ寸法Ｌの中心位置にボンディングでき
るように調節・設定しなければならない。そこで、従来
は、キャピラリツール１が、半導体チップ４における電
極パッド部５の略真上の部位に位置するようにおよその
位置調節を行い、この状態で、試しのワイヤーボンディ
ングを施工する。At the time of this wire bonding, the relative positional relationship between the capillary tool 1 and the semiconductor chip 4 is determined by measuring the width of the metal wire 2 inserted through the capillary tool 1 in the electrode pad portion 5 of the semiconductor chip 4. It must be adjusted and set so that bonding can be performed at the center position of W and the length dimension L. Therefore, conventionally, the capillary tool 1 is roughly adjusted so as to be positioned substantially above the electrode pad portion 5 of the semiconductor chip 4, and trial wire bonding is performed in this state.
【０００４】そして、金属線２のうち電極パッド部５に
ボンディングしたボール部２ａを、図５に示すように、
カメラにて拡大して認識することによって、電極パッド
５の幅寸法Ｗの方向に沿って、当該電極パッド５の一側
面縁５ａからボール部２ａの一端２ａ1 までの距離
Ｗ1 、及びボール部２ａの他端２ａ2 までの距離Ｗ2 を
測定し、（Ｗ2 −Ｗ1 ）／２＋Ｗ1 ＝Ｗ3 ′の演算を行
うことによって、前記一側面縁５ａからボール部２ａの
中心までの距離Ｗ3 ′を求め、次いで、この距離Ｗ 3 ′
と前記電極パッド部５における幅寸法Ｗの半分（つま
り、Ｗ／２）とを比較することによって、電極パッド部
５における幅方向の中心に対するボール部２ａ中心の誤
差寸法Ｅｘ′を検出する。Then, in the electrode pad portion 5 of the metal wire 2,
As shown in FIG. 5, the bonded ball portion 2a is
By enlarging and recognizing with the camera, the electrode pad
5, one side of the electrode pad 5 along the direction of the width dimension W
One end 2a of the ball portion 2a from the surface edge 5a1Distance to
W1, And the other end 2a of the ball portion 2a2Distance to2To
Measure and (W2-W1) / 2 + W1= W3’
By pushing the one side edge 5a of the ball portion 2a
Distance to center W3′, Then this distance W 3′
And half the width W of the electrode pad portion 5 (
, W / 2) and the electrode pad
Of the center of the ball portion 2a with respect to the center in the width direction in FIG.
The difference size Ex 'is detected.
【０００５】一方、電極パッド部５における長さ寸法Ｌ
の方向についても、前記と同様に、電極パッド５の一側
面縁５ｂからボール部２ａの一端２ａ3 までの距離
Ｌ1 、及びボール部２ａ4 までの距離Ｌ2 を測定し、
（Ｌ2 −Ｌ1 ）／２＋Ｌ1 ＝Ｌ3 ′の演算を行うことに
よって、前記一側面縁５ａからボール部２ａの中心まで
の距離Ｌ3 ′を求め、次いで、この距離Ｌ3 ′と前記電
極パッド部５における長さ寸法Ｌの半分（つまり、Ｌ／
２）とを比較することによって、電極パッド部５におけ
る長さ方向の中心に対するボール部２ａ中心の誤差寸法
Ｅｙ′を検出する。On the other hand, the length dimension L of the electrode pad portion 5
In the same manner as described above, the distance L 1 from one side edge 5b of the electrode pad 5 to one end 2a 3 of the ball portion 2a and the distance L 2 to the ball portion 2a 4 are measured in the same manner as above.
By calculating (L 2 −L 1 ) / 2 + L 1 = L 3 ′, the distance L 3 ′ from the one side edge 5 a to the center of the ball portion 2 a is obtained, and then this distance L 3 ′ and the above Half the length L of the electrode pad portion 5 (that is, L /
By comparing with 2), the error dimension Ey ′ of the center of the ball portion 2a with respect to the center of the electrode pad portion 5 in the longitudinal direction is detected.
【０００６】そして、キャピラリツール１と半導体チッ
プ４との間における相対的な位置関係を、前記幅方向に
沿った誤差寸法Ｅｘ′、及び長さ方向に沿った誤差寸法
Ｅｙ′だけ、修正・調節するようにしている。Then, the relative positional relationship between the capillary tool 1 and the semiconductor chip 4 is corrected / adjusted by the error dimension Ex ′ along the width direction and the error dimension Ey ′ along the length direction. I am trying to do it.
【０００７】[0007]
【発明が解決しようとする課題】しかし、金属線２の先
端におけるボール部２ａを、キャピラリツール１にて、
半導体チップ５に対して押圧したとき、このボール２ａ
は、真円の状態に潰れ変形するとは限らず、図５に一点
鎖線で示すように、金属線２の中心に対して偏芯した形
状に潰れ変形したり、或いは、二点鎖線で示すように、
楕円形に潰れ変形したりすることにより、ボール部２ａ
の中心２ａ′が金属線２の中心２′よりも寸法Ｅだけ偏
芯する場合が多く発生するから、前記した従来の検出方
法では、電極パッド部５に対する金属線２のボンディン
グ位置の検出に、金属線２におけるボール部２ａの潰れ
変形するときの形状に起因する誤差が発生することによ
り、ボンディング位置を正確に検出することができない
のである。However, the ball portion 2a at the tip of the metal wire 2 is fixed by the capillary tool 1.
When pressed against the semiconductor chip 5, this ball 2a
Does not always crush and deform into a perfect circle, and as shown by the one-dot chain line in FIG. 5, crush and deform into a shape eccentric to the center of the metal wire 2, or as shown by the two-dot chain line. To
The ball portion 2a is deformed by being crushed into an elliptical shape.
Since the center 2a 'of the metal wire 2 is often eccentric from the center 2'of the metal wire 2 by the dimension E, in the above-described conventional detection method, the bonding position of the metal wire 2 to the electrode pad portion 5 is detected. Since an error occurs due to the shape of the metal wire 2 when the ball portion 2a is crushed and deformed, the bonding position cannot be accurately detected.
【０００８】一方、ワイヤーボンディング装置において
は、ワイヤーボンディングを繰り返して行っていると、
キャピラリツール１と半導体チップ４との間における相
対的な位置関係には、装置のガタツキ等によって、ずれ
が発生すものである。これに対して、前記した従来の検
出方法は、一回だけの試しワイヤーボンディングを施工
するものに過ぎないから、作動を繰り返して行った後に
おけるずれ量を検出することができないのである。On the other hand, in the wire bonding apparatus, when wire bonding is repeatedly performed,
The relative positional relationship between the capillary tool 1 and the semiconductor chip 4 is deviated due to rattling of the device. On the other hand, the above-described conventional detection method is one in which the trial wire bonding is performed only once, and therefore it is not possible to detect the deviation amount after repeating the operation.
【０００９】その結果、前記従来の検出方法では、ワイ
ヤーボンディングに際して、電極パッド部に対するボン
ディング位置に起因するミスが多発し、不良品の発生が
高くなると言う問題を招来するのであった。本発明は、
この問題を招来することがないようにした検出方法を提
供することを技術的課題とするものである。As a result, the above-mentioned conventional detection method has a problem in that, during wire bonding, mistakes frequently occur due to the bonding position with respect to the electrode pad portion, and the number of defective products increases. The present invention is
It is a technical object to provide a detection method that does not cause this problem.
【００１０】[0010]
【課題を解決するための手段】この技術的課題を達成す
るため本発明は、金属線を挿通したキャピラリツール
を、当該キャピラリツールを電極パッド部に対して押圧
作動するようにしたツールホーンに、着脱自在に取付け
て成るワイヤーボンディング装置において、前記ツール
ホーンに、前記キャピラリツールに代えて、針状体を、
当該針状体の尖端が前記キャピラリツールに挿通した金
属線の中心線と一致するようにして取付けて、この針状
体を、ツールホーンの作動によって前記電極パッド部に
対して押圧することにした。In order to achieve this technical object, the present invention provides a capillary tool having a metal wire inserted therein, and a tool horn adapted to press the capillary tool against an electrode pad portion. In a wire bonding apparatus detachably attached, a needle-shaped body is provided in the tool horn instead of the capillary tool.
The needle-shaped body was attached so that the tip of the needle-shaped body was aligned with the center line of the metal wire inserted through the capillary tool, and the needle-shaped body was pressed against the electrode pad portion by the operation of the tool horn. .
【００１１】[0011]
【作 用】このようにすると、電極パッド部には、当
該電極パッド部に対する針状体の押圧により、針状体に
おける尖端にて圧痕が、キャピラリツールに挿通した金
属線の中心線上の位置に刻設されることになるから、こ
の圧痕の位置を、電極パッド部における幅方向及び長さ
方向の両方について測定することにより、電極パッド部
に対する金属線のボンディング位置を、金属線の下端に
おけるボール部の潰れ変形の形状の影響を受けることな
く、正確に検出することができるのである。[Operation] By doing so, the pressing of the needle-shaped body against the electrode pad section causes an indentation at the tip of the needle-shaped body to be located on the center line of the metal wire inserted through the capillary tool. Therefore, the position of the indentation is measured in both the width direction and the length direction of the electrode pad section, so that the bonding position of the metal wire to the electrode pad section can be determined by the ball at the lower end of the metal wire. It is possible to detect accurately without being affected by the shape of the crushed deformation of the portion.
【００１２】また、前記したように、電極パッド部に対
して針状体を押圧することを、複数回繰り返して行うこ
とにより、電極パッド部には、複数個の圧痕が刻設され
ることになるから、この複数個の各圧痕のバラツキによ
って、複数回にわたる繰り返し作動後におけるずれ量
を、確実に、且つ、正確に検出することができるのであ
る。Further, as described above, pressing the needle-shaped body against the electrode pad portion is repeated a plurality of times, whereby a plurality of indentations are formed on the electrode pad portion. Therefore, it is possible to reliably and accurately detect the deviation amount after a plurality of repeated operations due to the variation of the plurality of indentations.
【００１３】[0013]
【発明の効果】このように、本発明によると、電極パッ
ド部に対する金属線のボンディング位置を正確に検出で
きると共に、複数回にわたる繰り返し作動後におけるず
れ量をも、確実に、且つ、正確に検出することができる
ことにより、ワイヤーボンディングに際して、ボンディ
ング位置に起因して発生するミスを少なくできて、不良
品の発生を大幅に低減できる効果を有する。As described above, according to the present invention, the bonding position of the metal wire with respect to the electrode pad portion can be accurately detected, and the deviation amount after repeated operation for a plurality of times can be detected reliably and accurately. By doing so, it is possible to reduce mistakes caused by the bonding position during wire bonding, and it is possible to significantly reduce the occurrence of defective products.
【００１４】[0014]
【実施例】以下、本発明の実施例を、図１〜図３の図面
について説明する。図１において符号３は、ワイヤーボ
ンディング装置におけるツールホーンを示し、このツー
ルホーン３は、前記図４の場合と同様に、半導体チップ
４における電極パッド部５とリード端子６との間を矢印
Ａで示すように横方向に往復動すると共に、この往復動
の両端において矢印Ｂで示すように上下動するように作
動することにより、これに着脱自在に取付けたキャピラ
リツール１にて、前記半導体チップ４における電極パッ
ド部５とリード端子６との間を、二点鎖線で示すよう
に、金属線２にてワイヤーボンディングするものであ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described below with reference to the drawings of FIGS. In FIG. 1, reference numeral 3 indicates a tool horn in the wire bonding apparatus. The tool horn 3 is similar to the case of FIG. 4 above, and is indicated by an arrow A between the electrode pad portion 5 and the lead terminal 6 in the semiconductor chip 4. As shown in the drawing, the semiconductor chip 4 is reciprocally moved in the lateral direction, and at both ends of the reciprocation, the capillary chip 1 is removably attached to the semiconductor chip 4 so that the semiconductor chip 4 can be moved up and down. The metal wire 2 is used for wire bonding between the electrode pad portion 5 and the lead terminal 6 in (3) as indicated by a chain double-dashed line.
【００１５】このツールホーン３に対してキャピラリツ
ール１を取付けることに代えて、下端に尖端７ａを備え
た針状体７を、当該針状体７における尖端７ａが、前記
キャピラリツール１に挿通した金属線２の中心線２ｂと
一致するように取付ける。そして、前記ツールホーン３
を、これに取付けた針状体７における尖端７ａが半導体
チップ４における電極パッド部５に対して押圧するよう
に作動するのである。Instead of attaching the capillary tool 1 to the tool horn 3, a needle-shaped body 7 having a tip 7a at the lower end is inserted into the capillary tool 1 with the tip 7a of the needle-shaped body 7. The metal wire 2 is attached so as to coincide with the center line 2b. And the tool horn 3
Is operated so that the tip 7a of the needle-shaped body 7 attached thereto presses against the electrode pad portion 5 of the semiconductor chip 4.
【００１６】すると、半導体チップ４における電極パッ
ド５には、当該電極パッド部５に対する針状体７の押圧
により、針状体７における尖端７ａにて圧痕Ｃが、図２
に示すように、キャピラリツール１に挿通した金属線２
の中心線上の位置に刻設されることになる。そこで、電
極パッド部５をカメラ等にて認識しながら、電極パッド
５の一側面縁５ａから圧痕Ｃの中心までの距離Ｗ3 を測
定し、次いで、この距離Ｗ3 と前記電極パッド部５にお
ける幅寸法Ｗの半分（つまり、Ｗ／２）とを比較するこ
とにより、電極パッド部５における幅方向の中心に対す
る金属線２の中心の誤差寸法Ｅｘを、金属線２における
ボール部２ａの潰れ変形の形状の影響を受けることな
く、正確に検出することができる。Then, when the needle-shaped body 7 is pressed against the electrode pad portion 5 of the semiconductor chip 4, an indentation C is formed at the tip 7a of the needle-shaped body 7, as shown in FIG.
As shown in, the metal wire 2 inserted through the capillary tool 1
Will be engraved at the position on the center line of. Therefore, while recognizing the electrode pad portion 5 with a camera or the like, the distance W 3 from one side edge 5a of the electrode pad 5 to the center of the indentation C is measured, and then this distance W 3 and the electrode pad portion 5 are measured. By comparing with half of the width dimension W (that is, W / 2), the error dimension Ex of the center of the metal wire 2 with respect to the center of the electrode pad portion 5 in the width direction can be calculated by the crush deformation of the ball portion 2a of the metal wire 2. Can be accurately detected without being affected by the shape of the.
【００１７】一方、電極パッド部５における長さ寸法Ｌ
の方向についても、前記と同様に、電極パッド５の一側
面縁５ｂから圧痕跡Ｃの中心までの距離Ｌ3 を測定し、
次いで、この距離Ｌ3 と前記電極パッド部５における長
さ寸法Ｌの半分（つまり、Ｌ／２）とを比較することに
よって、電極パッド部５における長さ方向の中心に対す
る金属線２の中心の誤差寸法Ｅｙを、金属線２における
ボール部２ａの潰れ変形の形状の影響を受けることな
く、正確に検出することができるのである。On the other hand, the length dimension L of the electrode pad portion 5
In the same manner as described above, the distance L 3 from one side edge 5b of the electrode pad 5 to the center of the indentation C is measured in the same manner as above.
Next, by comparing this distance L 3 with half of the length dimension L of the electrode pad portion 5 (that is, L / 2), the center of the metal wire 2 with respect to the center in the length direction of the electrode pad portion 5 is determined. The error dimension Ey can be accurately detected without being affected by the shape of the crush deformation of the ball portion 2a of the metal wire 2.
【００１８】また、前記したように、電極パッド部５に
対して針状体７を押圧することを、複数回繰り返して行
うことにより、電極パッド部５には、図３に示すよう
に、複数個の圧痕Ｃが刻設されることになるから、この
複数個の各圧痕Ｃのバラツキによって、複数回にわたる
繰り返し作動後における幅寸法Ｗ及び長さ寸法Ｌ方向の
ずれ量Ｃｘ及びｙを、確実に、且つ、正確に検出するこ
とができるのである。Further, as described above, pressing the needle-shaped body 7 against the electrode pad portion 5 is repeated a plurality of times, so that the electrode pad portion 5 has a plurality of portions as shown in FIG. Since the individual indentations C are engraved, the deviation amounts Cx and y in the width dimension W and the length dimension L directions after the repeated operation for a plurality of times can be surely made due to the variation of each of the plurality of indentations C. In addition, it can be accurately detected.
【００１９】従って、前記の検出結果に基づいて、キャ
ピラリツール１と半導体チップ４との間における相対的
な位置関係を、修正・調節したのち、前記ツールホーン
３に、前記針状体７に代えて金属線２を挿通したキャピ
ラリツール１を取付けて、所定のワイヤーボンディング
を行うことにより、金属線２を電極パッド部５の中心に
対して正確にボンディングすることができるから、ワイ
ヤーボンディングに際して、電極パッド部に対するボン
ディング位置に起因してミスが発生することを大幅に低
減できるのである。Therefore, after correcting and adjusting the relative positional relationship between the capillary tool 1 and the semiconductor chip 4 based on the detection result, the tool horn 3 is replaced by the needle-shaped body 7. The metal wire 2 can be accurately bonded to the center of the electrode pad portion 5 by attaching the capillary tool 1 having the metal wire 2 inserted therethrough and performing predetermined wire bonding. It is possible to significantly reduce the occurrence of mistakes due to the bonding position with respect to the pad portion.
【図１】本発明の実施例を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.
【図２】本発明の方法による電極パッド部の拡大平面図
である。FIG. 2 is an enlarged plan view of an electrode pad portion according to the method of the present invention.
【図３】本発明の方法による電極パッド部の拡大平面図
である。FIG. 3 is an enlarged plan view of an electrode pad portion according to the method of the present invention.
【図４】従来の方法を示す斜視図である。FIG. 4 is a perspective view showing a conventional method.
【図５】従来の方法による電極パッド部の拡大平面図で
ある。FIG. 5 is an enlarged plan view of an electrode pad portion according to a conventional method.
【符号の説明】 １ キャピラリツール ２ 金属線 ３ ツールホーン ４ 半導体チップ ５ 電極パッド部 ６ リード端子 ７ 針状体 ７ａ 針状体の尖端[Explanation of reference symbols] 1 Capillary tool 2 Metal wire 3 Tool horn 4 Semiconductor chip 5 Electrode pad section 6 Lead terminal 7 Needle-like body 7a Tip of needle-like body
Claims (1)
該キャピラリツールを電極パッド部に対して押圧作動す
るようにしたツールホーンに、着脱自在に取付けて成る
ワイヤーボンディング装置において、前記ツールホーン
に、前記キャピラリツールに代えて、針状体を、当該針
状体の尖端が前記キャピラリツールに挿通した金属線の
中心線と一致するようにして取付けて、この針状体を、
ツールホーンの作動によって前記電極パッド部に対して
押圧することを特徴とするワイヤーボンディング装置に
おけるボンディング位置の検出方法。1. A wire bonding apparatus in which a capillary tool having a metal wire inserted therein is detachably attached to a tool horn adapted to press the capillary tool against an electrode pad portion. Instead of the capillary tool, a needle-shaped body is attached so that the tip of the needle-shaped body is aligned with the center line of the metal wire inserted into the capillary tool, and the needle-shaped body is attached.
A method for detecting a bonding position in a wire bonding apparatus, characterized by pressing the electrode pad portion by operating a tool horn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19565792A JPH0645392A (en) | 1992-07-22 | 1992-07-22 | Detecting method for bonding position of wire bonding apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19565792A JPH0645392A (en) | 1992-07-22 | 1992-07-22 | Detecting method for bonding position of wire bonding apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0645392A true JPH0645392A (en) | 1994-02-18 |
Family
ID=16344826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19565792A Pending JPH0645392A (en) | 1992-07-22 | 1992-07-22 | Detecting method for bonding position of wire bonding apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0645392A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8084277B2 (en) * | 2006-03-31 | 2011-12-27 | Fujitsu Semiconductor Limited | Semiconductor device and manufacturing method thereof |
| JPWO2010147187A1 (en) * | 2009-06-18 | 2012-12-06 | ローム株式会社 | Semiconductor device |
-
1992
- 1992-07-22 JP JP19565792A patent/JPH0645392A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8084277B2 (en) * | 2006-03-31 | 2011-12-27 | Fujitsu Semiconductor Limited | Semiconductor device and manufacturing method thereof |
| US20120061847A1 (en) * | 2006-03-31 | 2012-03-15 | Fujitsu Semiconductor Limited | Semiconductor device and manufacturing method thereof |
| US8395260B2 (en) | 2006-03-31 | 2013-03-12 | Fujitsu Semiconductor Limited | Semiconductor device and manufacturing method thereof |
| JPWO2010147187A1 (en) * | 2009-06-18 | 2012-12-06 | ローム株式会社 | Semiconductor device |
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