JPH0643487A - Liquid crystal display device and its production - Google Patents

Liquid crystal display device and its production

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Publication number
JPH0643487A
JPH0643487A JP19822792A JP19822792A JPH0643487A JP H0643487 A JPH0643487 A JP H0643487A JP 19822792 A JP19822792 A JP 19822792A JP 19822792 A JP19822792 A JP 19822792A JP H0643487 A JPH0643487 A JP H0643487A
Authority
JP
Japan
Prior art keywords
film
region
light
liquid crystal
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19822792A
Other languages
Japanese (ja)
Inventor
Atsuyuki Hoshino
淳之 星野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP19822792A priority Critical patent/JPH0643487A/en
Publication of JPH0643487A publication Critical patent/JPH0643487A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To provide the TFT active matrix driving liquid crystal display device which lessens the generation of spot defects and can improve a contrast with the TFT active matrix driving liquid crystal display device including a method for forming pixel electrodes. CONSTITUTION:This liquid crystal display device is constituted by including gate electrodes 22 on a transparent substrate 21, gate insulating films 23 coating the gate electrodes 22, operating semiconductor layers 24a on the gate insulating films 23 of the regions inclusive of the regions above the gate electrodes 22, channel protective films 25 on the operating semiconductor layers 24a, conductor films 33a, 33b serving as source electrodes and drain electrodes connecting to the operating semiconductor layers 24a on both sides with the channel protective films 25 in-between, light transmissive conductor films 30a on the conductor films 33a serving as the source electrodes and on the gate insulating films 23 of adjacent regions 42 inclusive of regions 46 forming the pixel electrodes and light transparent conductor films 31c on the light conductor films 30a formed to coat boundary part regions 43 contg. both of the regions 41 for forming the source electrodes and adjacent regions 42.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はTFTアクティブマトリ
クス駆動液晶表示装置及びその製造方法に関し、更に詳
しく言えば、画素電極の形成方法を含むTFTアクティ
ブマトリクス駆動液晶表示装置及びその製造方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a TFT active matrix driving liquid crystal display device and a manufacturing method thereof, and more particularly to a TFT active matrix driving liquid crystal display device including a pixel electrode forming method and a manufacturing method thereof.

【0002】[0002]

【従来の技術】近年、薄型,軽量及び低消費電力のた
め、大型テレビやラップトップ型パソコン等にTFTア
クティブマトリクス駆動液晶表示装置が用いられるよう
になっている。更なる普及のために、製造歩留りの向上
及び性能の向上が望まれている。
2. Description of the Related Art In recent years, because of its thinness, light weight and low power consumption, a TFT active matrix drive liquid crystal display device has come to be used in large televisions, laptop personal computers and the like. For further popularization, improvement of manufacturing yield and improvement of performance are desired.

【0003】図4(a)〜(d),図5(e),(f)
は、従来例の画素電極の形成方法を含むTFTアクティ
ブマトリクス駆動液晶表示装置の製造方法について説明
する断面図、図5(g)は平面図で、図5(f)は図5
(g)のA−A線断面図である。
4A to 4D, 5E and 5F.
FIG. 5G is a cross-sectional view illustrating a method of manufacturing a TFT active matrix drive liquid crystal display device including a conventional method of forming pixel electrodes, FIG. 5G is a plan view, and FIG.
It is the sectional view on the AA line of (g).

【0004】図4(a)はチャネル保護膜を形成した後
の状態を示す断面図で、図中符号1は透明基板、2は透
明基板1上に選択的に形成されたゲート電極、3はゲー
ト電極2を被覆し、かつ透明基板1上に形成されたゲー
ト絶縁膜、4はゲート絶縁膜3上の動作半導体層となる
アモルファスシリコン膜(以下、a−Si膜と称す
る。)、5はゲート電極2の上方であって、a−Si膜
4上に選択的に形成されたチャネル保護膜である。な
お、ゲート電極2の形成時にゲート電極2と接続するゲ
ートバスラインも形成する。
FIG. 4A is a cross-sectional view showing a state after forming a channel protective film. In the figure, reference numeral 1 is a transparent substrate, 2 is a gate electrode selectively formed on the transparent substrate 1, and 3 is a gate electrode. A gate insulating film 4 which covers the gate electrode 2 and is formed on the transparent substrate 1 is an amorphous silicon film (hereinafter referred to as an a-Si film) 5 which serves as an operating semiconductor layer on the gate insulating film 3. It is a channel protective film selectively formed on the a-Si film 4 above the gate electrode 2. A gate bus line connected to the gate electrode 2 when forming the gate electrode 2 is also formed.

【0005】まず、このような状態で、図4(b)に示
すように、チャネル保護膜5を被覆し、かつa−Si膜
4上にn+型のa−Si膜6及びチタン膜7を形成す
る。次いで、チャネル保護膜5上でa−Si膜6及びチ
タン膜7を左右に分離し、かつTFTを形成すべき領域
にa−Si膜4,a−Si膜6及びチタン膜7が残存す
るようにレジストパターン8a,8bを形成した後、該
レジストパターン8a,8bをマスクとしてa−Si膜
4,a−Si膜6及びチタン膜7をエッチング・除去
し、a−Si膜からなる動作半導体層4aと、a−Si
膜6a/チタン膜7aからなるソース電極9a及びa−
Si膜6b/チタン膜7bからなるドレイン電極9bを
形成する。これにより、TFTが完成する(図4
(c))。
First, in this state, as shown in FIG. 4B, the channel protective film 5 is covered, and the n + type a-Si film 6 and titanium film 7 are formed on the a-Si film 4. To form. Then, the a-Si film 6 and the titanium film 7 are separated left and right on the channel protection film 5, and the a-Si film 4, the a-Si film 6 and the titanium film 7 are left in the region where the TFT is to be formed. After the resist patterns 8a and 8b are formed on the substrate, the a-Si film 4, the a-Si film 6 and the titanium film 7 are etched and removed using the resist patterns 8a and 8b as a mask to form an operating semiconductor layer made of an a-Si film. 4a and a-Si
Source electrodes 9a and a- composed of the film 6a / titanium film 7a
A drain electrode 9b composed of the Si film 6b / titanium film 7b is formed. This completes the TFT (Fig. 4
(C)).

【0006】次に、DCスパッタにより膜厚100 〜300
ÅのITO膜を形成した後、レジストパターン10に基
づいてパターニングし、ソース電極9aと接続し、かつ
ゲート絶縁膜3上に延在する画素電極11を形成する
(図4(d))。
Next, a film thickness of 100 to 300 is formed by DC sputtering.
After forming the ITO film of Å, patterning is performed based on the resist pattern 10 to form the pixel electrode 11 which is connected to the source electrode 9a and extends on the gate insulating film 3 (FIG. 4D).

【0007】次いで、ドレイン電極9b上にドレインバ
スライン12を形成する。続いて、絶縁膜13を形成し
た後、パターニングし、TFTを被覆する(図5
(e))。次に、液晶を全面に塗布・乾燥して液晶層1
4を形成すると、TFTアクティブマトリクス駆動液晶
表示装置が完成する(図5(f),(g))。なお、図
5(g)において、2aはゲート電極2の形成時に形成
され、ドレインバスライン12とゲート絶縁膜3を介し
て交差するゲートバスラインである。
Then, the drain bus line 12 is formed on the drain electrode 9b. Then, after forming the insulating film 13, patterning is performed to cover the TFT (FIG. 5).
(E)). Next, liquid crystal is applied to the entire surface and dried to form a liquid crystal layer 1.
4 is completed, the TFT active matrix drive liquid crystal display device is completed (FIGS. 5F and 5G). In FIG. 5G, 2a is a gate bus line which is formed when the gate electrode 2 is formed and intersects the drain bus line 12 with the gate insulating film 3 interposed therebetween.

【0008】このようにして作成されたTFTアクティ
ブマトリクス駆動液晶表示装置に透明基板1側からバッ
クライト光を照射し、選択的にTFTを駆動させる。こ
れにより、所望の部分にバックライト光を透過させ、表
示装置として表示を行うことができる。
The TFT active matrix driving liquid crystal display device thus produced is irradiated with backlight light from the transparent substrate 1 side to selectively drive the TFTs. As a result, it is possible to transmit the backlight light to a desired portion and display as a display device.

【0009】[0009]

【発明が解決しようとする課題】ところで、上記従来の
方法により作成されたTFTアクティブマトリクス駆動
液晶表示装置において、TFTを駆動させているにもか
かわらず、部分的にバックライト光が透過しない、所謂
点欠陥が生じる場合があり、問題となっている。
By the way, in the TFT active matrix driving liquid crystal display device manufactured by the above-mentioned conventional method, the so-called backlight is not partially transmitted although the TFT is driven. Point defects may occur, which is a problem.

【0010】これは、画素電極11とソース電極9aと
が接続していないことにより発生する。本願発明者の調
査によると、図4(d)に示す画素電極11となるIT
O膜を形成する際、図6に示すように、ソース電極9a
の端部の段差の部分で段差のためにITO膜11aが途切
れてしまうことが原因していると判明した。
This occurs because the pixel electrode 11 and the source electrode 9a are not connected. According to the investigation by the inventor of the present application, the IT which becomes the pixel electrode 11 shown in FIG.
When forming the O film, as shown in FIG. 6, the source electrode 9a is formed.
It was found that this is caused by the fact that the ITO film 11a was interrupted due to the step at the step at the end of the.

【0011】また、画素電極11の形成領域以外の領域
でバックライト光の漏れが生じているため、コントラス
トが低く、画面が見にくいという問題もある。本発明は
かかる従来例の問題点に鑑み創作されたものであり、点
欠陥の発生を低減し、かつコントラストの向上を図るこ
とができるTFTアクティブマトリクス駆動液晶表示装
置及びその製造方法の提供を目的とする。
Further, since leakage of the backlight light occurs in a region other than the region where the pixel electrode 11 is formed, there is a problem that the contrast is low and the screen is difficult to see. The present invention was created in view of the problems of the conventional example, and an object of the present invention is to provide a TFT active matrix drive liquid crystal display device capable of reducing the occurrence of point defects and improving the contrast, and a manufacturing method thereof. And

【0012】[0012]

【課題を解決するための手段】上記課題は、第1に、透
明基板と、該透明基板上のゲート電極と、該ゲート電極
を被覆するゲート絶縁膜と、前記ゲート電極上方の領域
を含む領域のゲート絶縁膜上の動作半導体層と、該動作
半導体層上のチャネル保護膜と、該チャネル保護膜を挟
んで両側の前記動作半導体層と接続するソース電極及び
ドレイン電極となる導電体膜と、前記ソース電極となる
導電体膜上、及び該ソース電極の形成領域に隣接し、画
素電極の形成領域を含む隣接領域の前記ゲート絶縁膜上
の透光性導電体膜と、前記ソース電極の形成領域と前記
隣接領域とを両方含む境界部領域を被覆するように形成
された、前記透光性導電体膜上の遮光性導電体膜とを有
する薄膜トランジスタ駆動液晶表示装置によって達成さ
れ、第2に、前記画素電極の形成領域のうち、中央部領
域は前記透光性導電体膜を有する透光領域となってお
り、該中央部領域以外の周辺部領域は前記遮光性導電体
膜により被覆されていることを特徴とする第1の発明に
記載の薄膜トランジスタ駆動液晶表示装置によって達成
され、第3に、透明基板上のゲート電極を被覆するゲー
ト絶縁膜上であって、前記ゲート電極上方の領域を含む
領域に、動作半導体層と、該動作半導体層上のチャネル
保護膜と、該チャネル保護膜を挟んで両側の前記動作半
導体層と接続するソース電極及びドレイン電極となる導
電体膜とを形成する工程と、全面に透光性導電体膜及び
遮光性導電体膜を順次形成した後、パターニングし、前
記ソース電極となる導電体膜上、及び該ソース電極の形
成領域に隣接し、画素電極の形成領域を含む隣接領域の
前記ゲート絶縁膜上に前記透光性導電体膜及び遮光性導
電体膜を残存する工程と、少なくとも、前記ソース電極
の形成領域と前記隣接領域とを両方含む境界部領域を被
覆するように前記遮光性導電体膜を残存し、かつ前記画
素電極の形成領域の透光領域の前記遮光性導電体膜を除
去する工程とを有する薄膜トランジスタ駆動液晶表示装
置の製造方法によって達成され、第4に、前記画素電極
の形成領域の透光領域は前記画素電極の形成領域のうち
中央部領域であり、該中央部領域の周辺部領域に前記遮
光性導電体膜を残存することを特徴とする第3の発明に
記載の薄膜トランジスタ駆動液晶表示装置の製造方法に
よって達成される。
The above-mentioned problems are, firstly, a region including a transparent substrate, a gate electrode on the transparent substrate, a gate insulating film covering the gate electrode, and a region above the gate electrode. An operating semiconductor layer on the gate insulating film, a channel protective film on the operating semiconductor layer, and a conductor film serving as a source electrode and a drain electrode connected to the operating semiconductor layers on both sides with the channel protective film interposed therebetween. Forming the light-transmitting conductive film on the gate insulating film on the conductive film serving as the source electrode and adjacent to the source electrode forming region and including the pixel electrode forming region, and the source electrode And a light-shielding conductor film on the light-transmitting conductor film, which is formed so as to cover a boundary region including both the region and the adjacent region. , The above In the region where the element electrodes are formed, the central region is a translucent region having the translucent conductor film, and the peripheral region other than the central region is covered with the light-shielding conductor film. A third aspect of the present invention is achieved by the thin film transistor driving liquid crystal display device according to the first aspect of the present invention, and thirdly, the gate insulating film that covers the gate electrode on the transparent substrate includes a region above the gate electrode. In the region, a step of forming an operating semiconductor layer, a channel protective film on the operating semiconductor layer, and a conductor film serving as a source electrode and a drain electrode connected to the operating semiconductor layer on both sides with the channel protective film interposed therebetween. And a light-transmitting conductive film and a light-blocking conductive film are sequentially formed on the entire surface and then patterned to form a pixel electrode on the conductive film serving as the source electrode and adjacent to the source electrode formation region. region A step of leaving the translucent conductor film and the light-shielding conductor film on the gate insulating film in the adjacent region including, and at least covering a boundary region including both the source electrode formation region and the adjacent region. Is achieved by a method of manufacturing a thin film transistor drive liquid crystal display device, which comprises a step of leaving the light-shielding conductor film, and removing the light-shielding conductor film in a light-transmitting region of the pixel electrode formation region, Fourthly, the light-transmitting region of the pixel electrode forming region is a central region of the pixel electrode forming region, and the light-shielding conductor film remains in a peripheral region of the central region. According to the third aspect of the invention, it is achieved by the method of manufacturing a thin film transistor drive liquid crystal display device.

【0013】[0013]

【作 用】本発明に係る薄膜トランジスタ駆動液晶表示
装置及びその製造方法によれば、画素電極となる透光性
導電体膜上に遮光性導電体膜を重ねて形成した後、画素
電極の形成領域のうち中央部領域の透光領域の遮光性導
電体膜を除去するとともに、ソース電極の形成領域と、
このソース電極の形成領域に隣接し、画素電極の形成領
域を含む隣接領域とを両方含む境界部領域を被覆するよ
うに遮光性導電体膜を残存しているので、従来のよう
に、TFTの端部の段差のため仮に透光性導電体膜が途
切れても、遮光性導電体膜によりソース電極側と画素電
極側との電気的な接続は確保される。
According to the thin film transistor drive liquid crystal display device and the method of manufacturing the same according to the present invention, a light-shielding conductor film is formed on a light-transmitting conductor film to be a pixel electrode, and then a pixel electrode formation region is formed. Of the central region, the light-shielding conductor film in the light-transmitting region is removed, and a source electrode formation region is formed.
Since the light-shielding conductor film is left so as to cover the boundary region including both the adjoining region including the pixel electrode forming region and the adjoining region including the pixel electrode forming region, as in the conventional case, Even if the translucent conductor film is interrupted due to the step at the end portion, the light-shielding conductor film ensures the electrical connection between the source electrode side and the pixel electrode side.

【0014】また、透光性導電体膜からなる画素電極を
被覆する遮光性導電体膜を利用して、画素電極の中央部
領域の遮光性導電体膜を除去するとともに、遮光性導電
体膜を画素電極の周辺部領域に残すようにしているの
で、バックライト光の透過可能な透光領域が遮光領域に
より囲まれることになり、コントラストの向上を図るこ
とができる。
Further, the light-shielding conductor film covering the pixel electrode made of the light-transmitting conductor film is utilized to remove the light-shielding conductor film in the central region of the pixel electrode and at the same time, to shield the light-shielding conductor film. Are left in the peripheral region of the pixel electrode, the light-transmitting region capable of transmitting the backlight light is surrounded by the light-shielding region, and the contrast can be improved.

【0015】[0015]

【実施例】以下に、本発明の実施例に係る半導体装置の
製造方法について図面を参照しながら説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a semiconductor device according to an embodiment of the present invention will be described below with reference to the drawings.

【0016】図1(a)〜(d),図2(e),
(f),図3(g)は本発明の実施例に係る半導体装置
の製造方法について説明する断面図、図3(h)は平面
図で、図3(g)は図3(h)のB−B線断面図であ
る。
1 (a) to 1 (d), FIG. 2 (e),
3F is a cross-sectional view for explaining the method for manufacturing a semiconductor device according to the embodiment of the present invention, FIG. 3H is a plan view, and FIG. 3G is for FIG. It is a BB line sectional view.

【0017】図1(a)はチャネル保護膜を形成した後
の状態を示す断面図で、図中符号21は合成石英からな
る透明基板、22は透明基板21上に選択的に形成され
た膜厚約500Åのアルミニウム膜(以下、Al膜と称
する。)及び膜厚約200Åのチタン膜(以下、Ti膜
と称する。)の2層の導電体膜からなるゲート電極で、
Ti膜の表層にはTi膜のプラズマ酸化により膜厚約2
00Åの酸化チタン膜(TiO2 膜)が形成され、ゲー
ト電極22を被覆するゲート絶縁膜23としてのシリコ
ン窒化膜との密着性を向上させている。23はゲート電
極22を被覆し、かつ透明基板21上に形成された膜厚
約4000Åのシリコン窒化膜からなるゲート絶縁膜であ
る。24はゲート絶縁膜23上の動作半導体層となる膜
厚約250Åのアモルファスシリコン膜(以下、a−S
i膜と称する。)、25はゲート電極22の上方であっ
て、a−Si膜24上に選択的に形成された膜厚約1400
Åのシリコン窒化膜からなるチャネル保護膜である。な
お、ゲート電極22の形成時にゲート電極22と接続す
るゲートバスラインも形成する。
FIG. 1A is a cross-sectional view showing a state after the channel protective film is formed. In the figure, reference numeral 21 is a transparent substrate made of synthetic quartz, and 22 is a film selectively formed on the transparent substrate 21. A gate electrode composed of a two-layer conductor film of an aluminum film (hereinafter referred to as an Al film) having a thickness of about 500Å and a titanium film (hereinafter referred to as a Ti film) having a thickness of about 200Å,
The thickness of the surface of the Ti film is about 2 due to the plasma oxidation of the Ti film.
A titanium oxide film (TiO 2 film) of 00Å is formed to improve the adhesion with the silicon nitride film as the gate insulating film 23 that covers the gate electrode 22. Reference numeral 23 is a gate insulating film which covers the gate electrode 22 and is formed on the transparent substrate 21 and is made of a silicon nitride film having a film thickness of about 4000 Å. Reference numeral 24 denotes an amorphous silicon film (hereinafter referred to as a-S) having a film thickness of about 250 Å which serves as an operating semiconductor layer on the gate insulating film 23.
It is called an i-membrane. ), 25 is above the gate electrode 22 and has a film thickness of about 1400 selectively formed on the a-Si film 24.
It is a channel protective film made of Å silicon nitride film. A gate bus line connected to the gate electrode 22 when the gate electrode 22 is formed is also formed.

【0018】まず、このような状態で、剥離表面処理を
行った後、PH3 をドープしたSiH4 の雰囲気中で、
プラズマCVD法(以下、P−CVD法と称する。)に
より、チャネル保護膜25を被覆してa−Si膜24上
に膜厚約500Åのn+型のa−Si膜26を形成す
る。続いて、膜厚約500ÅのTi膜27をDCスパッ
タにより形成する(図1(b))。
First, in this state, after performing a peeling surface treatment, in a PH 3 -doped SiH 4 atmosphere,
The channel protection film 25 is covered by a plasma CVD method (hereinafter referred to as P-CVD method) to form an n + -type a-Si film 26 having a film thickness of about 500 Å on the a-Si film 24. Subsequently, a Ti film 27 having a film thickness of about 500 Å is formed by DC sputtering (FIG. 1B).

【0019】次いで、TFTを形成すべき領域にa−S
i膜24,a−Si膜26及びTi膜27が残存するよ
うにレジストパターン28を形成した後、該レジストパ
ターン28をマスクとしてa−Si膜24,a−Si膜
26及びTi膜27をエッチング・除去し、a−Si膜
からなる動作半導体層24aを形成するとともに、a−S
i膜26a及びTi膜27aを残存する(図1(c))。
Then, aS is formed in the area where the TFT is to be formed.
After forming the resist pattern 28 so that the i film 24, the a-Si film 26 and the Ti film 27 remain, the a-Si film 24, the a-Si film 26 and the Ti film 27 are etched using the resist pattern 28 as a mask.・ Removed to form the operating semiconductor layer 24a made of a-Si film, and a-S
The i film 26a and the Ti film 27a remain (FIG. 1C).

【0020】次に、DCスパッタにより膜厚100〜3
00ÅのITO膜(透光性導電体膜)30及び膜厚3000
ÅのTi膜(遮光性導電体膜)31を連続して形成する
(図1(d))。
Next, a film thickness of 100 to 3 is formed by DC sputtering.
00Å ITO film (translucent conductor film) 30 and film thickness 3000
A Ti film (light-shielding conductor film) 31 of Å is continuously formed (FIG. 1D).

【0021】次いで、チャネル保護膜25上で左右に分
離し、かつドレイン電極の形成領域に残存し、かつソー
ス電極の形成領域41及びソース電極の形成領域41に
隣接し、画素電極の形成領域46を含む隣接領域42に
レジストパターン32a,32bを形成した後、BCl3
Cl2 ガスを用いた反応性イオンエッチングによりレジ
ストパターン32a,32bをマスクとしてTi膜31/I
TO膜30/Ti膜27a/a−Si膜26aを連続してエ
ッチング・除去する。これにより、a−Si膜26b/T
i膜27bからなるソース電極33a及びa−Si膜26c/
チタン膜27cからなるドレイン電極33bを形成し、ま
た、ソース電極の形成領域41及び隣接領域42にIT
O膜30a/Ti膜31aを残存するとともに、ドレイン電
極33b上にITO膜30b/Ti膜31bを残存し、かつI
TO膜30b/Ti膜31bからなるドレインバスライン2
9を形成する(図2(e))。
Next, on the channel protection film 25, the pixel electrode formation region 46 is separated into the left and right sides, remains in the drain electrode formation region, and is adjacent to the source electrode formation region 41 and the source electrode formation region 41. After forming the resist patterns 32a and 32b in the adjacent region 42 including BCl 3 +
The Ti film 31 / I is formed by reactive ion etching using Cl 2 gas using the resist patterns 32a and 32b as masks.
The TO film 30 / Ti film 27a / a-Si film 26a is continuously etched and removed. As a result, the a-Si film 26b / T
The source electrode 33a composed of the i film 27b and the a-Si film 26c /
The drain electrode 33b made of the titanium film 27c is formed, and the IT is formed in the source electrode formation region 41 and the adjacent region 42.
The O film 30a / Ti film 31a remains, the ITO film 30b / Ti film 31b remains on the drain electrode 33b, and I
Drain bus line 2 consisting of TO film 30b / Ti film 31b
9 is formed (FIG. 2E).

【0022】次に、TFTの保護膜となるシリコン窒化
膜を形成した後、画素電極としてのITO膜30aの周辺
部領域45の上方にレジストパターン35aを形成すると
ともに、TFTの端部を含むTFTの上方にレジストパ
ターン35bを形成する。続いて、レジストパターン35
a,35bをマスクとしてシリコン窒化膜/Ti膜31aを
エッチング・除去する。これにより、ソース電極33aと
画素電極30aとの接続部の境界部領域43であって、T
FTの端部はTi膜31cにより被覆されるとともに、画
素電極30aの周辺部領域45もTi膜31cにより被覆さ
れる(図2(f))。
Next, after forming a silicon nitride film serving as a protective film for the TFT, a resist pattern 35a is formed above the peripheral region 45 of the ITO film 30a as the pixel electrode, and the TFT including the end portion of the TFT is formed. A resist pattern 35b is formed above. Then, the resist pattern 35
The silicon nitride film / Ti film 31a is etched and removed using a and 35b as a mask. As a result, in the boundary region 43 of the connection portion between the source electrode 33a and the pixel electrode 30a,
The end portion of the FT is covered with the Ti film 31c, and the peripheral region 45 of the pixel electrode 30a is also covered with the Ti film 31c (FIG. 2 (f)).

【0023】次に、レジストパターン35a,35bを除去
した後、液晶を全面に塗布・乾燥して液晶層36を形成
すると、TFTアクティブマトリクス駆動液晶表示装置
が完成する(図3(g),(h))。なお、図3(h)
において、22aはゲート電極22の形成時に形成され、
ドレインバスライン29とゲート絶縁膜23を介して交
差するゲートバスラインである。
Next, after removing the resist patterns 35a and 35b, liquid crystal is applied to the entire surface and dried to form a liquid crystal layer 36, whereby a TFT active matrix drive liquid crystal display device is completed (FIGS. 3 (g) and 3 (g). h)). Note that FIG. 3 (h)
22a is formed when the gate electrode 22 is formed,
The gate bus line intersects the drain bus line 29 with the gate insulating film 23 interposed therebetween.

【0024】このようにして作成されたTFTアクティ
ブマトリクス駆動液晶表示装置に透明基板21側からバ
ックライト光を照射し、選択的にTFTを駆動させる。
これにより、所望の部分にバックライト光を透過させ、
表示装置として表示を行うことができる。
The TFT active matrix driving liquid crystal display device thus produced is irradiated with backlight light from the transparent substrate 21 side to selectively drive the TFTs.
This allows the backlight light to pass through to the desired part,
The display can be performed as a display device.

【0025】以上のように、本発明の実施例のTFTア
クティブマトリクス駆動LCDの製造方法によれば、図
2(e)に示すように、画素電極となるITO膜30a上
にTi膜31aを重ねて形成した後、画素電極30aの中央
部領域44のバックライト光の透過領域のTi膜31aを
除去するとともに、ソース電極33aと画素電極30aとの
接続部の境界部領域3であって、TFTの端部のITO
膜30aを被覆するようにTi膜31cを残しているので、
従来のように、TFTの端部の段差のため仮にITO膜
30aが途切れても、Ti膜31cによりソース電極33a側
と画素電極30a側との電気的な接続は確保される。これ
により、点欠陥等の発生を防止し、歩留りの向上を図る
ことができる。
As described above, according to the manufacturing method of the TFT active matrix drive LCD of the embodiment of the present invention, as shown in FIG. 2E, the Ti film 31a is superposed on the ITO film 30a which becomes the pixel electrode. After the formation, the Ti film 31a in the backlight light transmitting region of the central region 44 of the pixel electrode 30a is removed, and the boundary region 3 of the connecting portion between the source electrode 33a and the pixel electrode 30a is ITO on the edge of
Since the Ti film 31c is left so as to cover the film 30a,
As in the conventional case, due to the step at the end of the TFT, the ITO film is temporarily
Even if 30a is interrupted, the Ti film 31c ensures electrical connection between the source electrode 33a side and the pixel electrode 30a side. As a result, it is possible to prevent the occurrence of point defects and improve the yield.

【0026】また、画素電極30aを被覆するTi膜31a
を利用して、Ti膜31cを画素電極30aの周辺部領域4
5に残すようにしているので、バックライト光の透過領
域が遮光領域により囲まれることになり、コントラスト
の向上を図ることができる。これにより、一層見やすい
画面を有する表示装置を提供することができる。
Further, a Ti film 31a for covering the pixel electrode 30a
By using the Ti film 31c as the peripheral region 4 of the pixel electrode 30a.
Since it is left in No. 5, the light transmitting region of the backlight is surrounded by the light shielding region, and the contrast can be improved. This makes it possible to provide a display device having a screen that is easier to see.

【0027】[0027]

【発明の効果】以上説明したように、本発明に係る薄膜
トランジスタ駆動液晶表示装置及びその製造方法によれ
ば、画素電極となる透光性導電体膜上に遮光性導電体膜
を重ねて形成した後、画素電極の形成領域のうち中央部
領域の透光領域の遮光性導電体膜を除去するとともに、
ソース電極の形成領域と、このソース電極の形成領域に
隣接し、画素電極の形成領域を含む隣接領域とを両方含
む境界部領域を被覆するように遮光性導電体膜を残存し
ているので、従来のように、TFTの端部の段差のため
仮に透光性導電体膜が途切れても、遮光性導電体膜によ
りソース電極側と画素電極側との電気的な接続は確保さ
れる。これにより、点欠陥等の発生を防止し、歩留りの
向上を図ることができる。
As described above, according to the thin film transistor driving liquid crystal display device and the method of manufacturing the same according to the present invention, the light-shielding conductor film is formed on the light-transmitting conductor film serving as the pixel electrode. After that, while removing the light-shielding conductive film in the light-transmitting region in the central region of the pixel electrode formation region,
Since the light-shielding conductor film is left so as to cover the boundary electrode region that includes both the source electrode formation region and the source electrode formation region and the adjacent region that includes the pixel electrode formation region, Even if the translucent conductor film is interrupted due to the step at the end of the TFT as in the conventional case, the light-shielding conductor film ensures the electrical connection between the source electrode side and the pixel electrode side. As a result, it is possible to prevent the occurrence of point defects and improve the yield.

【0028】また、透光性導電体膜からなる画素電極を
被覆する遮光性導電体膜を利用して、画素電極の中央部
領域の遮光性導電体膜を除去するとともに、遮光性導電
体膜を画素電極の周辺部領域に残すようにしているの
で、バックライト光の透過可能な透光領域が遮光領域に
より囲まれることになり、コントラストの向上を図るこ
とができる。これにより、一層見やすい画面を有する表
示装置を提供することができる。
Further, the light-shielding conductor film covering the pixel electrode made of the light-transmitting conductor film is utilized to remove the light-shielding conductor film in the central region of the pixel electrode, and at the same time, to shield the light-shielding conductor film. Are left in the peripheral region of the pixel electrode, the light-transmitting region capable of transmitting the backlight light is surrounded by the light-shielding region, and the contrast can be improved. This makes it possible to provide a display device having a screen that is easier to see.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例に係るTFTアクティブマトリ
クス駆動LCDの製造方法についての説明図(その1)
である。
FIG. 1 is an explanatory view (No. 1) of a method of manufacturing a TFT active matrix drive LCD according to an embodiment of the present invention.
Is.

【図2】本発明の実施例に係るTFTアクティブマトリ
クス駆動LCDの製造方法についての説明図(その2)
である。
FIG. 2 is an explanatory view (No. 2) of a method for manufacturing a TFT active matrix drive LCD according to the embodiment of the present invention.
Is.

【図3】本発明の実施例に係るTFTアクティブマトリ
クス駆動LCDの製造方法についての説明図(その3)
である。
FIG. 3 is an explanatory view (No. 3) of the manufacturing method of the TFT active matrix drive LCD according to the embodiment of the present invention.
Is.

【図4】従来例に係るTFTアクティブマトリクス駆動
LCDの製造方法についての説明図(その1)である。
FIG. 4 is an explanatory diagram (1) of a method for manufacturing a TFT active matrix drive LCD according to a conventional example.

【図5】従来例に係るTFTアクティブマトリクス駆動
LCDの製造方法についての説明図(その2)である。
FIG. 5 is an explanatory diagram (Part 2) of the method for manufacturing the TFT active matrix drive LCD according to the conventional example.

【図6】従来例の問題点について説明する断面図であ
る。
FIG. 6 is a cross-sectional view illustrating a problem of a conventional example.

【符号の説明】[Explanation of symbols]

21 透明基板: 22 ゲート電極、 22a ゲートバスライン、 23 ゲート絶縁膜、 24,26,26a,26b,26c a−Si膜、 24a 動作半導体層、 25 チャネル保護膜、 27,27a,27b,27c Ti膜、 28,32a,32b,35a,35b レジストパターン、 29 ドレインバスライン、 30,30a,30b ITO膜(透光性導電体膜)、 31,31a,31b,31c Ti膜(遮光性導電体膜)、 32a,32bコン層(動作半導体層)、 33a ソース電極(導電体膜)、 33b ドレイン電極(導電体膜)、 34a,34b シリコン窒化膜、 41 ソース電極の形成領域、 42 隣接領域、 43 境界部領域、 44 中央部領域、 45 周辺部領域、 46 画素電極の形成領域。 21 transparent substrate: 22 gate electrode, 22a gate bus line, 23 gate insulating film, 24, 26, 26a, 26b, 26c a-Si film, 24a operating semiconductor layer, 25 channel protective film, 27, 27a, 27b, 27c Ti Film, 28, 32a, 32b, 35a, 35b Resist pattern, 29 Drain bus line, 30, 30a, 30b ITO film (transparent conductive film), 31, 31a, 31b, 31c Ti film (light-shielding conductive film) ), 32a, 32b Con layer (operating semiconductor layer), 33a Source electrode (conductor film), 33b Drain electrode (conductor film), 34a, 34b Silicon nitride film, 41 Source electrode formation region, 42 Adjacent region, 43 Boundary region, 44 Central region, 45 Peripheral region, 46 Pixel electrode formation region.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 透明基板と、該透明基板上のゲート電極
と、該ゲート電極を被覆するゲート絶縁膜と、前記ゲー
ト電極上方の領域を含む領域のゲート絶縁膜上の動作半
導体層と、該動作半導体層上のチャネル保護膜と、該チ
ャネル保護膜を挟んで両側の前記動作半導体層と接続す
るソース電極及びドレイン電極となる導電体膜と、前記
ソース電極となる導電体膜上、及び該ソース電極の形成
領域に隣接し、画素電極の形成領域を含む隣接領域の前
記ゲート絶縁膜上の透光性導電体膜と、前記ソース電極
の形成領域と前記隣接領域とを両方含む境界部領域を被
覆するように形成された、前記透光性導電体膜上の遮光
性導電体膜とを有する液晶表示装置。
1. A transparent substrate, a gate electrode on the transparent substrate, a gate insulating film covering the gate electrode, an operating semiconductor layer on the gate insulating film in a region including a region above the gate electrode, A channel protective film on the operating semiconductor layer, a conductor film serving as a source electrode and a drain electrode connected to the operating semiconductor layer on both sides of the channel protective film, a conductor film serving as the source electrode, and A translucent conductor film on the gate insulating film in an adjoining area including a pixel electrode forming area and a boundary area including both the source electrode forming area and the adjoining area And a light-shielding conductor film on the light-transmitting conductor film formed so as to cover the liquid crystal display device.
【請求項2】 前記画素電極の形成領域のうち、中央部
領域は前記透光性導電体膜を有する透光領域となってお
り、該中央部領域以外の周辺部領域は前記遮光性導電体
膜により被覆されていることを特徴とする請求項1記載
の液晶表示装置。
2. A central region of the pixel electrode formation region is a translucent region having the translucent conductor film, and a peripheral region other than the central region is the light-shielding conductor. The liquid crystal display device according to claim 1, wherein the liquid crystal display device is covered with a film.
【請求項3】 透明基板上のゲート電極を被覆するゲー
ト絶縁膜上であって、前記ゲート電極上方の領域を含む
領域に、動作半導体層と、該動作半導体層上のチャネル
保護膜と、該チャネル保護膜を挟んで両側の前記動作半
導体層と接続するソース電極及びドレイン電極となる導
電体膜とを形成する工程と、 全面に透光性導電体膜及び遮光性導電体膜を順次形成し
た後、パターニングし、前記ソース電極となる導電体膜
上、及び該ソース電極の形成領域に隣接し、画素電極の
形成領域を含む隣接領域の前記ゲート絶縁膜上に前記透
光性導電体膜及び遮光性導電体膜を残存する工程と、 少なくとも、前記ソース電極の形成領域と前記隣接領域
とを両方含む境界部領域を被覆するように前記遮光性導
電体膜を残存し、かつ前記画素電極の形成領域の透光領
域の前記遮光性導電体膜を除去する工程とを有する液晶
表示装置の製造方法。
3. An operating semiconductor layer, a channel protection film on the operating semiconductor layer, and a region of the gate insulating film covering the gate electrode on the transparent substrate, the region including the region above the gate electrode. A step of forming a source electrode and a conductor film serving as a drain electrode connected to the operating semiconductor layers on both sides of the channel protective film, and a light-transmitting conductor film and a light-shielding conductor film are sequentially formed on the entire surface. After that, the transparent conductive film is patterned and formed on the conductive film to be the source electrode, and on the gate insulating film in the adjacent region including the formation region of the pixel electrode and adjacent to the formation region of the source electrode. A step of leaving the light-shielding conductor film, and at least leaving the light-shielding conductor film so as to cover a boundary region including both the source electrode formation region and the adjacent region, and Forming area Method of manufacturing a liquid crystal display device and a step of removing the light-shielding conductive film of the light-transmitting region.
【請求項4】 前記画素電極の形成領域の透光領域は前
記画素電極の形成領域のうち中央部領域であり、該中央
部領域の周辺部領域に前記遮光性導電体膜を残存するこ
とを特徴とする請求項3記載の液晶表示装置の製造方
法。
4. The light-transmitting region of the pixel electrode forming region is a central region of the pixel electrode forming region, and the light-shielding conductor film is left in a peripheral region of the central region. The method for manufacturing a liquid crystal display device according to claim 3, wherein the liquid crystal display device is manufactured.
JP19822792A 1992-07-24 1992-07-24 Liquid crystal display device and its production Pending JPH0643487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19822792A JPH0643487A (en) 1992-07-24 1992-07-24 Liquid crystal display device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19822792A JPH0643487A (en) 1992-07-24 1992-07-24 Liquid crystal display device and its production

Publications (1)

Publication Number Publication Date
JPH0643487A true JPH0643487A (en) 1994-02-18

Family

ID=16387624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19822792A Pending JPH0643487A (en) 1992-07-24 1992-07-24 Liquid crystal display device and its production

Country Status (1)

Country Link
JP (1) JPH0643487A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646756A (en) * 1994-09-16 1997-07-08 Kabushiki Kaisha Toshiba Liquid crystal display device with a protecting film that partially overlaps a display pixel electrode
JP2000180898A (en) * 1998-12-12 2000-06-30 Samsung Electronics Co Ltd Thin film transistor substrate for liquid crystal display device and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646756A (en) * 1994-09-16 1997-07-08 Kabushiki Kaisha Toshiba Liquid crystal display device with a protecting film that partially overlaps a display pixel electrode
JP2000180898A (en) * 1998-12-12 2000-06-30 Samsung Electronics Co Ltd Thin film transistor substrate for liquid crystal display device and its manufacture

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