JPH0642461B2 - Semiconductor thin film vapor phase growth equipment - Google Patents
Semiconductor thin film vapor phase growth equipmentInfo
- Publication number
- JPH0642461B2 JPH0642461B2 JP17617085A JP17617085A JPH0642461B2 JP H0642461 B2 JPH0642461 B2 JP H0642461B2 JP 17617085 A JP17617085 A JP 17617085A JP 17617085 A JP17617085 A JP 17617085A JP H0642461 B2 JPH0642461 B2 JP H0642461B2
- Authority
- JP
- Japan
- Prior art keywords
- tube
- thin film
- bottomed
- semiconductor thin
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体薄膜気相成長装置に関し、より詳しくは
有底同心管と反応管がつくる環状空間に一様なガスの流
れを作り、小さなガス流量で均一、且つ、表面欠陥の少
ない半導体薄膜の成長を行える半導体薄膜気相成長装置
に関する。Description: TECHNICAL FIELD The present invention relates to a semiconductor thin film vapor phase growth apparatus, and more specifically, to a uniform gas flow in an annular space formed by a bottomed concentric tube and a reaction tube, The present invention relates to a semiconductor thin film vapor deposition apparatus capable of growing a semiconductor thin film with a uniform gas flow rate and few surface defects.
（従来の技術） 従来、バレル型縦型炉は第３図〜第５図に示される。第
３図に示されるように反応管（４０）の内の多角錐台状
のカーボンサセプタ（４１）上に基板結晶（４２）がお
かれ、外部のＲＦコイル（４３）を用いて高周波誘導に
より所定の温度に加熱される。ガス導入口（４５）より
導入された原料ガス（４６）は上記基板結晶（４２）表
面付近で熱分解等の反応により半導体薄膜を基板結晶
（４２）上に堆積された後、排気口（４７）より排気さ
れる構造になっている。なお、反応管の管壁は冷却ジャ
ケット（４４）に冷媒を流すことにより冷却されてお
り、管壁周辺での原料ガスの分解を抑制している。一
方、第４図に示すものは半球上のサセプタキャップ（４
８）をサセプタ（４１）上に設けてガス導入口（４５）
より導入された原料ガス（４６）の流れを乱さないよう
にしたものである。(Prior Art) Conventionally, a barrel type vertical furnace is shown in FIG. 3 to FIG. As shown in FIG. 3, the substrate crystal (42) is placed on the polygonal frustum-shaped carbon susceptor (41) in the reaction tube (40), and high frequency induction is performed using an external RF coil (43). It is heated to a predetermined temperature. The source gas (46) introduced through the gas inlet (45) deposits a semiconductor thin film on the substrate crystal (42) by a reaction such as thermal decomposition near the surface of the substrate crystal (42), and then an exhaust port (47). ) It is structured to be exhausted from. The tube wall of the reaction tube is cooled by flowing a refrigerant through the cooling jacket (44) to suppress decomposition of the raw material gas around the tube wall. On the other hand, the one shown in FIG. 4 is a susceptor cap (4
8) is provided on the susceptor (41) and the gas introduction port (45) is provided.
The flow of the introduced raw material gas (46) is not disturbed.
しかしながら、第３図及び第４図に示されている半導体
薄膜気相成長装置はサセプタ（４１）の上部に大きな自
由空間があり、この部分での原料ガスの通過断面積が大
きいためにガス速度が小さく、その上、上記サセプタ
（４１）が高温であるのに対して反応管（４０）が低温
であるために対流がおこりやすい。そこで、均一な半導
体薄膜を成長させるためには原料ガスの流れを対流に打
ち勝って層流になるようにしなければならないが、それ
には大きなガス流量を必要とするので原料収率が上らな
い。また、対流があれば反応生成物が反応管（４０）の
上部に付着しこれが薄膜成長中に剥離し基板結晶（４
２）上に付着して表面欠陥の一因となる。However, in the semiconductor thin film vapor phase growth apparatus shown in FIGS. 3 and 4, there is a large free space above the susceptor (41), and the cross-sectional area of passage of the source gas in this portion is large, so the gas velocity is large. In addition, the susceptor (41) has a high temperature and the reaction tube (40) has a low temperature, so that convection easily occurs. Therefore, in order to grow a uniform semiconductor thin film, it is necessary to overcome the convection flow of the raw material gas to form a laminar flow, but this requires a large gas flow rate, and thus the raw material yield cannot be increased. Further, if there is convection, the reaction product adheres to the upper part of the reaction tube (40) and is separated during the thin film growth to cause the substrate crystal (4).
2) It adheres on top and contributes to surface defects.
さらに、第５図に示すものはサセプタ（４１）の上部に
設けたノズル（４９）から原料ガス（４６）をジェット
状に吹き出す構造になっているが、ノズル（４９）の上
部の空間のガスの置換えが速やかに行えないため急峻な
ドーピングプロファイルを得にくいといった問題があ
る。Further, the structure shown in FIG. 5 has a structure in which the raw material gas (46) is jetted out from the nozzle (49) provided on the upper part of the susceptor (41) in the form of a jet, but the gas in the space above the nozzle (49) is However, there is a problem in that it is difficult to obtain a steep doping profile because the replacement cannot be performed quickly.
そこで、本発明者らは、上記の観点に鑑みて先に第６図
及び第７図に示すような半導体薄膜気相成長装置（特願
昭５８−２０６２９４号）を提案した。この例において
は、反応管（２１）のガス導入口（２２）からサセプタ
（２３）の上面までの部分を、内側を有底の同心管部で
構成して外側のこの反応管部との間に環状空間部（２
４）を形成した同心管状構造とし、且つ、この環状空間
部（２４）にバッフル板（２５）を設けたもので、これ
により原料ガスが相対的に大きな速度で、且つ、一様に
サセプタ（２３）上の結晶基板（２６）上に供給される
ようにしたものである。Therefore, in view of the above viewpoints, the present inventors have previously proposed a semiconductor thin film vapor phase growth apparatus (Japanese Patent Application No. 58-206294) as shown in FIGS. 6 and 7. In this example, the portion from the gas inlet port (22) of the reaction tube (21) to the upper surface of the susceptor (23) is formed by a concentric tube portion having a bottom inside and between this reaction tube portion on the outside. In the annular space (2
4) is formed into a concentric tubular structure, and a baffle plate (25) is provided in the annular space portion (24), so that the source gas is uniformly moved at a relatively high speed and the susceptor ( 23) on the crystal substrate (26) above.
（発明が解決しようとする問題点） ところが、第６図に示す装置でガス導入口を等間隔に３
個設けて実験を行なったところ、ガス導入口（２２）で
のガスの吹き出し速度が大きすぎ、バッフル板（２５）
があるにも拘わらずガス導入口（２２）直下でガス速度
が大きく、ガス導入口間で小さいといったガスの流れの
不均一を生じ、ガスが巻き上ることがあった。(Problems to be Solved by the Invention) However, in the device shown in FIG.
When an experiment was carried out by providing one piece, the gas blowing speed at the gas inlet (22) was too high, and the baffle plate (25)
In spite of this, the gas velocity was high just below the gas inlet (22), and the gas flow was uneven between the gas inlets being small, and the gas was sometimes swirled up.
したがって、本発明はこのような特願昭５８−２０６２
９４号で示した装置を改良し同心管状部に一様なガスの
流れを作り、小さなガス流で均一、且つ、表面欠陥の少
ない半導体薄膜気相成長装置を提案することを目的とす
る。Therefore, the present invention is disclosed in Japanese Patent Application No. Sho 58-2062.
It is an object of the present invention to improve the apparatus shown in No. 94 to make a uniform gas flow in a concentric tubular portion and to propose a semiconductor thin film vapor phase growth apparatus which is uniform with a small gas flow and has few surface defects.
（問題点を解決するための手段） 上記目的は、バレル型縦型炉を有する半導体薄膜気相成
長装置において、反応管のガス導入口からサセプタ方向
に向ってガス導入円管を設けるとともに、この円管を覆
う有底同心管を設け、この有底同心管の上端部を上記反
応管に固着し、且つ、その近傍に複数の小孔が穿設して
なり、ガスは導入口側から下向に導入され、有底同心管
底部で向きをかえ、上部に流れさらに該複数の小孔から
吹き出したのち有底同心管と反応管の管壁とが作る環状
空間へ流れでるようにしたことを特徴とする半導体薄膜
気相成長装置により達成することができた。(Means for Solving Problems) In the semiconductor thin film vapor phase growth apparatus having a barrel-type vertical furnace, the above-mentioned object is to provide a gas introduction circular tube from the gas introduction port of the reaction tube toward the susceptor, and A bottomed concentric tube that covers the circular tube is provided, the upper end of the bottomed concentric tube is fixed to the reaction tube, and a plurality of small holes are bored in the vicinity of the reaction tube. Introduced in the opposite direction, turned around at the bottom of the bottomed concentric tube, flowed to the upper part, and after being blown out from the plurality of small holes, flowed to the annular space formed by the bottomed concentric tube and the wall of the reaction tube. Was achieved by a semiconductor thin film vapor phase growth apparatus.
（実施例） 以下、第１図及び第２図に従い本発明の実施態様の１例
について説明する。(Example) An example of an embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
第１図において、符号（Ａ）は本発明による半導体薄膜
気相成長装置を示し、この半導体薄膜気相成長装置
（Ａ）は上部にガス導入口（２）（内径２ｒ０）が、下
部に排気口（３）が設けられた反応管（１）（内径２ｒ
５）と、この反応管（１）の内部に回転自在に設けられ
た多角錐台状のサセプタ（４）及び上記ガス導入口
（２）からこのサセプタ（４）方向に向って設けられた
円管（５）によって形成されるとともに、この円管
（５）の周囲には上端が上記反応管（１）に固着された
有底同心管（６）が設けられている。上記円管（５）は
この有底同心管（６）で覆われる。そして、有底同心管
（６）の上端部の近傍には複数の小孔（７）が穿設され
ている。（８）、（８）…は上記反応管（１）と有底同
心管（６）との環状空間部（９）に設けたバッフル板を
示し、このバッフル板（８）、（８）…の所定位置には
小孔（１０）、（１０）…が穿設されている。In FIG. 1, reference numeral (A) indicates a semiconductor thin film vapor phase growth apparatus according to the present invention. This semiconductor thin film vapor phase growth apparatus (A) has a gas inlet (2) (inner diameter 2r 0 ) at the upper part and a lower part at the lower part. Reaction tube (1) provided with an exhaust port (3) (inner diameter 2r
5 ), a polygonal truncated pyramid-shaped susceptor (4) rotatably provided inside the reaction tube (1), and a circle provided from the gas inlet (2) toward the susceptor (4). A bottomed concentric tube (6), which is formed by the tube (5) and whose upper end is fixed to the reaction tube (1), is provided around the circular tube (5). The circular pipe (5) is covered with the bottomed concentric pipe (6). A plurality of small holes (7) are formed near the upper end of the bottomed concentric tube (6). Reference numerals (8), (8) ... Show baffle plates provided in the annular space (9) between the reaction tube (1) and the bottomed concentric tube (6). The baffle plates (8), (8) ... Small holes (10), (10) ... Are bored at predetermined positions.
一方、上記反応管（１）の周囲には冷却ジャケット（１
１）が設けられるとともに、一側下部には冷媒の給入口
（１２）が他側上部には冷媒の排出口（１３）が設けら
れている。また、この冷却ジャケット（１１）の外側部
にはＲＦコイル（１４）が配設されている。（１５）は
上記サセプタ（４）上の結晶基板を示す。On the other hand, around the reaction tube (1), a cooling jacket (1
1) is provided, and a refrigerant inlet (12) is provided at the lower part of one side and a refrigerant outlet (13) is provided at the upper part of the other side. An RF coil (14) is arranged on the outer side of the cooling jacket (11). (15) shows a crystal substrate on the susceptor (4).
半導体薄膜気相成長装置（Ａ）は上述のように構成され
ているので、その操作にあたっては、まず、ガス導入口
（２）から導入された原料ガスとキャリアガスはこのガ
ス導入口（２）の直下に設けられた円管（５）内を通過
してこの円管（５）の外周に設けられた有底同心管
（６）の底部に吹き付けられるとともに円管（５）と有
底同心管（６）との環状空間（１６）内を上昇してこの
有底同心管（６）の上端部近傍に穿設されている複数の
小孔（７）を通り抜け、反応管（１）と有底同心管
（６）とにより形成された環状空間部（９）に導入され
る。そして、この環状空間部（９）には小孔（１０）、
（１０）、（１０）…が穿設されたバッフル板（８）、
（８）…が設けられているので、ガスの流れはさらに均
一化されるようになっており回転状態のサセプタ（４）
上の結晶基板（１５）上に導入され、熱分解等の反応に
より半導体薄膜の均一な成長が行なわれる。Since the semiconductor thin film vapor phase growth apparatus (A) is configured as described above, the raw material gas and the carrier gas introduced from the gas introduction port (2) are first introduced into the gas introduction port (2) in the operation. Passing through the circular pipe (5) provided immediately below, and being sprayed onto the bottom of the bottomed concentric pipe (6) provided on the outer periphery of the circular pipe (5) and concentric with the circular pipe (5). Ascending in the annular space (16) with the tube (6) and passing through a plurality of small holes (7) formed near the upper end of the bottomed concentric tube (6), the reaction tube (1) It is introduced into the annular space (9) formed by the bottomed concentric tube (6). And in this annular space (9), a small hole (10),
Baffle plate (8) having (10), (10) ...
(8) ... are provided so that the gas flow is made more uniform, and the susceptor (4) in the rotating state is
It is introduced onto the upper crystal substrate (15) and a semiconductor thin film is uniformly grown by a reaction such as thermal decomposition.
一方、サセプタに関しては有底同心管（６）の底部と平
行にサセプタ（４）上面が配設される。On the other hand, regarding the susceptor, the upper surface of the susceptor (4) is arranged parallel to the bottom of the bottomed concentric tube (6).
なお、この有底同心管（６）とサセプタ（４）の上面の
間隔ｄ２は２mm以下とし、これによりサセプタ（４）は
有底同心管（６）の底部に接触させずに自由に回転でき
る。また、有底同心管（６）の外径２ｒ４はサセプタ
（４）の上面の内接円の直径２ｒ６以下とするが、可能
な限り２ｒ６に近い値とする。さらに、有底同心管
（６）の内径２ｒ３と円管（５）の外径２ｒ２、内径２
ｒ１はガスの通過断面積が等しくなる様に次式の関係を
満足することが望ましい。The distance d 2 between the bottomed concentric tube (6) and the upper surface of the susceptor (4) is set to 2 mm or less so that the susceptor (4) can freely rotate without contacting the bottom of the bottomed concentric tube (6). it can. Further, the outer diameter 2r 4 of the bottomed concentric tube (6) is set to be equal to or smaller than the diameter 2r 6 of the inscribed circle on the upper surface of the susceptor (4), but as close as possible to 2r 6 . Further, the inner diameter 2r 3 of the bottomed concentric tube (6), the outer diameter 2r 2 of the circular tube (5), and the inner diameter 2
It is desirable that r 1 satisfy the following relationship so that the gas passage cross sections become equal.
ｒ３ ２−ｒ２ ２＝ｒ１ ２ 上記円管（５）と有底同心管（６）の底部との間隙ｄ１
はサセプタ（４）の上部からの熱でガスが加熱されない
ようガス速度も速くする必要性からできる限り小さくす
ることが望ましい。r 3 gap d 1 between the bottom of the 2 -r 2 2 = r 1 2 the circular pipe (5) and bottom concentric tubes (6)
Is desired to be as small as possible from the necessity of increasing the gas velocity so that the gas is not heated by the heat from the upper part of the susceptor (4).
次に、第２図に示すものは本発明による半導体薄膜気相
成長装置（Ａ）の実施例の他例を示し、同図において第
１図と同符号は同じものを意味する。この例においては
円管（５ａ）の中央部にキャリアガス導入用の細管（１
７）を配設したもので、この導入細管（１７）の先端は
有底同心管（６ａ）の底部に開口し、基端はガス導入口
（２ａ）の側面より露出して固定されている。これによ
って、キャリアガスをサセプタ（４）に吹き付けること
ができ、上記有底同心管（６ａ）とこのサセプタ（４
ａ）の間隙にガスが淀むことを防止でき、より急峻な界
面を得ることができる。Next, FIG. 2 shows another embodiment of the semiconductor thin film vapor phase growth apparatus (A) according to the present invention. In FIG. 2, the same symbols as in FIG. In this example, a thin tube (1) for introducing carrier gas is provided at the center of the circular tube (5a).
7) is provided, and the leading end of the introducing thin tube (17) is opened to the bottom of the bottomed concentric tube (6a), and the proximal end is exposed and fixed from the side surface of the gas introducing port (2a). . As a result, the carrier gas can be blown to the susceptor (4), and the bottomed concentric tube (6a) and this susceptor (4) can be blown.
It is possible to prevent the gas from stagnating in the gap of a) and obtain a steeper interface.
（発明の作用、効果） 上記構成のように本発明による半導体薄膜気相成長装置
は、反応管のガス導入口からサセプタ方向に向って円管
を設けるとともに、この円管を覆う有底同心管を設け、
この有底同心管の上端部は上記反応管に固着され、且
つ、その近傍に複数の小孔が穿設される一方、上記有底
同心管と反応管との環状空間部に複数の小孔が穿設され
たバッフル板を適宜に設けたものである。したがって
（１）ガス導入口から導入された原料ガスとキャリアガ
スは均一化されてサセプタ上の結晶基板に導かれ、小さ
なガス流量で半導体薄膜の均一な成長が行なわれ、収率
が向上する（２）ドービングプロファイルやヘテロ界面
の急峻性が向上する。（３）反応生物が反応管の上部へ
付着することがなくなり、反応生成物による基板結晶の
表面欠陥がなくなった。(Operation and effect of the invention) As described above, the semiconductor thin film vapor phase growth apparatus according to the present invention is provided with a circular tube extending from the gas inlet of the reaction tube toward the susceptor, and a bottomed concentric tube covering the circular tube. Is provided
The upper end of the bottomed concentric tube is fixed to the reaction tube, and a plurality of small holes are formed in the vicinity thereof, while a plurality of small holes are formed in the annular space between the bottomed concentric tube and the reaction tube. Is provided with a baffle plate perforated as appropriate. Therefore, (1) the source gas and the carrier gas introduced from the gas inlet are homogenized and guided to the crystal substrate on the susceptor, the semiconductor thin film is uniformly grown with a small gas flow rate, and the yield is improved ( 2) The doving profile and the steepness of the hetero interface are improved. (3) The reaction product does not adhere to the upper part of the reaction tube, and the surface defects of the substrate crystal due to the reaction product disappeared.
第１図は本発明による半導体薄膜気相成長装置の実施態
様の一例を示す断面図、第２図は第１図、他の例を示す
断面図、第３図ないし第７図は従来例を示す断面図であ
る。 符号（Ａ）…半導体薄膜気相成長装置 （１）…反応管、（２）…ガス導入口 （３）…排気口、（４）…サセプタ （５）…円管、（６）…有底同心管 （８）…バッフル板、（１１）…冷却ジャケット （１４）…ＲＦコイルFIG. 1 is a sectional view showing an example of an embodiment of a semiconductor thin film vapor phase growth apparatus according to the present invention, FIG. 2 is FIG. 1 and sectional views showing other examples, and FIGS. 3 to 7 are conventional examples. It is sectional drawing shown. Reference numeral (A) ... Semiconductor thin film vapor phase growth apparatus (1) ... Reaction tube, (2) ... Gas inlet (3) ... Exhaust port, (4) ... Susceptor (5) ... Circular tube, (6) ... Bottomed Concentric tube (8) ... Baffle plate, (11) ... Cooling jacket (14) ... RF coil
Claims (2)
長装置において、反応管のガス導入口からサセプタ方向
に向ってガス導入円管を設けるとともに、この円管を覆
う有底同心管を設け、この有底同心管の上端部を上記反
応管に固着し、且つ、その近傍に複数の小孔を穿設して
なり、ガスは導入口側から下向に導入され、有底同心管
底部で向きをかえ、上部に流れ、さらに該複数の小孔か
ら吹き出したのち有底同心管と反応管の管壁とが作る環
状空間へ流れでるようにしたことを特徴とする半導体薄
膜気相成長装置。1. A semiconductor thin film vapor phase growth apparatus having a barrel type vertical furnace, wherein a gas introducing circular tube is provided from a gas introducing port of a reaction tube toward a susceptor, and a bottomed concentric tube covering the circular tube is provided. The bottom end of the concentric tube is fixed to the reaction tube and a plurality of small holes are formed in the vicinity of the bottom end of the bottomed concentric tube, and the gas is introduced downward from the inlet side. The semiconductor thin film vapor phase is characterized in that it is turned at the bottom, flows upward, and then flows out from the plurality of small holes and then flows into an annular space formed by the bottomed concentric tube and the tube wall of the reaction tube. Growth equipment.
複数の小孔の穿設されたバッフル板を設けたことを特徴
とする特許請求の範囲第１項記載の半導体薄膜気相成長
装置。2. The semiconductor thin film gas according to claim 1, wherein a baffle plate having a plurality of small holes is provided in the annular space between the bottomed concentric tube and the reaction tube. Phase growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17617085A JPH0642461B2 (en) | 1985-08-10 | 1985-08-10 | Semiconductor thin film vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17617085A JPH0642461B2 (en) | 1985-08-10 | 1985-08-10 | Semiconductor thin film vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6236812A JPS6236812A (en) | 1987-02-17 |
| JPH0642461B2 true JPH0642461B2 (en) | 1994-06-01 |
Family
ID=16008884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17617085A Expired - Lifetime JPH0642461B2 (en) | 1985-08-10 | 1985-08-10 | Semiconductor thin film vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0642461B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009125487A1 (en) | 2008-04-10 | 2009-10-15 | 株式会社アシックス | Coat |
| TW201122148A (en) * | 2009-12-24 | 2011-07-01 | Hon Hai Prec Ind Co Ltd | Chemical vapor deposition device |
-
1985
- 1985-08-10 JP JP17617085A patent/JPH0642461B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6236812A (en) | 1987-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4072470A (en) | Gas feeder for sulfonation apparatus | |
| JPH06247789A (en) | Inert gas straightening and blowing device for device for pulling up single crystal | |
| CN207659523U (en) | Processing chamber housing and for the component and cone in epitaxial chamber | |
| JPH0642461B2 (en) | Semiconductor thin film vapor phase growth equipment | |
| JPH0779088B2 (en) | Semiconductor thin film vapor phase growth equipment | |
| JPH0773099B2 (en) | Semiconductor vapor deposition equipment | |
| JPH07223894A (en) | Apparatus for production of semiconductor single crystal | |
| JPH03173419A (en) | Manufacture of semiconductor device | |
| JPH0530350Y2 (en) | ||
| JPS63199412A (en) | Vapor growth device | |
| JPS6254081A (en) | Vapor growth device | |
| JPH11240794A (en) | Epitaxial growth apparatus | |
| JPH0437901Y2 (en) | ||
| JPH0691011B2 (en) | Semiconductor thin film vapor phase growth equipment | |
| JPH0718441U (en) | Thin film vapor deposition equipment | |
| JP2681469B2 (en) | Epitaxial growth method for semiconductor substrate | |
| JPH10158098A (en) | Vapor phase growth method and system for gan thin film | |
| JPH0714782A (en) | Semiconductor production equipment | |
| JPH0722318A (en) | Vertical vapor epitaxial growing device | |
| JPH0310596B2 (en) | ||
| JP2639547B2 (en) | Wafer heating method and apparatus in vapor phase epitaxy apparatus | |
| JPS5972721A (en) | Vapor phase growth device | |
| JPH0116511Y2 (en) | ||
| JPH0778771A (en) | Semiconductor thin film vapor growth method and device | |
| JP2012144386A (en) | Apparatus for producing silicon carbide single crystal |