JPH06334263A - Semiconductor element and its manufacture - Google Patents

Abstract

PURPOSE:To achieve an improved thermal contact with a semiconductor material, improve thermal conductivity, and achieve a sufficiently and electrically insulated part by allowing the electrically insulated part where ions whose amount is within a specific range are implanted to exist in an n-type or p-type semiconductor layer of II-VI semiconductor element. CONSTITUTION:A single quantum well type isolation confinement hetero structure 3 is formed on p-type GaAs substrate 2 by the MBE method and ions to be implanted onto it are blocked, thus forming a mask where a low-resistance current injection region is left. Then, a metal electrode 1 is vapor deposited at the lower part of the p-type GaAs substrate 2. Then, nitrogen ion which is accelerated at 350keV acceleration voltage from an upper part is implanted within 0-10 deg. implantation angle and within 10<12>-10<18>ions/cm<2>, thus implanting ions at a region other than an area directly below the mask and forming a current constriction layer 10 of an insulator. Then, after the mask is eliminated, a metal electrode 8 is deposited on the current constriction layer 10, thus manufacturing a semiconductor element 11.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor comprising at least one element selected from the group II or divalent elements and at least one element selected from the group VI (hereinafter referred to as "II-VI semiconductor"). (Also referred to as ") element insulator, and
The present invention relates to a laser device made of a II-VI group semiconductor and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, SiO ₂ and polyimide resin have been used as an insulating layer of a II-VI group semiconductor laser device (for example, Hiroyuki Matsunami, Shokoido “Semiconductor Engineering” 214.
Page or Applied Physics Letters 199
1 year 59 volumes 1272).

[0003]

In order to extend the life of the semiconductor laser device, it is necessary for the insulating layer to efficiently release the generated heat to the outside.

However, the above-mentioned SiO ₂ or polyimide resin does not make sufficient thermal contact with the compound semiconductor, and since it has a low thermal conductivity, it can radiate sufficient heat. There was a problem. In addition, conventional II-VI
In the group III semiconductor laser device, it was not possible to use the n-type semiconductor above the active layer (the substrate side is the downward direction). This is because the current confinement layer and the active layer are separated,
This is because if an n-type semiconductor having a high carrier mobility is present during this period, the current diffuses laterally and the current cannot be confined in the active layer. Therefore, the n-type semiconductor has been used below the active layer, and the p-type semiconductor having a low carrier mobility has been used above the active layer. However, p-type
Since there is a Schottky barrier between the II-VI group semiconductor and the metal electrode and the contact resistance is large, the operating voltage of the laser element becomes high and heat is generated at the upper electrode.

In order to solve the above problems of the prior art, the present invention has a good thermal contact with a semiconductor material, a good thermal conductivity, and a II-VI group semiconductor device having a sufficient electrically insulating portion, and It is an object to provide a manufacturing method thereof.

[0006]

In order to achieve the above object, the semiconductor device of the present invention has an ion implantation amount of 10 ¹² to 10 10 in an n-type or p-type semiconductor layer of a II-VI group semiconductor device.
^It has a configuration in which there is an electrically insulating portion into which ions in the range of ¹⁸ ions / cm ² are implanted.

In the above construction, the film thickness of the electrically insulating portion is preferably in the range of 10 nm to 10 μm.
Further, in the above structure, as the semiconductor, Zn, Cd,
A compound comprising at least one group II element selected from Mg, Mn, Hg and Ca or at least one element selected from divalent elements and at least one group VI element selected from S, Se and Te is used. It is preferable.

In the above structure, the semiconductor element is preferably a semiconductor laser element. Further, in the above structure, as the current confinement layer of the semiconductor laser device,
The presence of an electrically insulating portion is preferred.

In the above structure, the semiconductor laser device is a semiconductor formed of at least one element selected from the group II or divalent elements formed on the substrate and at least one element selected from the group VI. An n-type or p-type semiconductor laminated structure of the device; a metal electrode provided on the entire surface of one surface of the laminated structure; and a metal portion provided in a convex shape on a part of the metal electrode. It is preferable that the laminated structure adjacent to the metal electrode in a portion other than the metal portion is electrically insulating by ion implantation.

Next, the method for manufacturing a semiconductor device of the present invention is described in II.
A dose of 10 ¹² is applied to an n-type or p-type semiconductor layer composed of at least one element selected from the group or elements capable of taking divalence and at least one element selected from group VI by ion implantation under high vacuum. It is characterized in that ions in the range of -10 ¹⁸ ions / cm ² are implanted to form an electrically insulating portion.

In the above structure, the implantation angle at the time of ion implantation is preferably in the range of 0 to 10 °. Further, in the above structure, the substrate temperature at the time of ion implantation is 0 to 300.
C. is preferred.

In the above structure, the ion beam current density during ion implantation is 10 nA / cm ^{2 to 1} μA / cm ^2.
It is preferably in the range of. Further, in the above structure, it is preferable that the semiconductor element is a semiconductor laser element, and an electrically insulating portion is formed as a current confinement layer of the semiconductor laser element.

In the above structure, the semiconductor element is a semiconductor laser element, and at least one element selected from the group II or the elements capable of taking divalence and at least one element selected from the group VI formed on the substrate. A metal electrode is formed on the entire one surface of the laminated structure of the semiconductor made of elements,
Next, it is preferable that a metal portion is formed in a convex shape on a part of the metal electrode, and then ions are implanted through the metal portion.

In the above structure, it is preferable that the metal portion has a stripe shape. Further, in the above structure, the thickness of the metal electrode is preferably 10 nm or more and 1 μm or less.

In the above structure, it is preferable that the film thickness of the metal portion is 0.1 μm or more and 10 μm or less.
In the above structure, the semiconductor composed of at least one element selected from the group II or divalent elements and at least one element selected from the group VI is an n-type semiconductor, and the implanted ions are group I or Ions of group V elements are preferred.

Further, in the above constitution, at least one element selected from the group II or the elements capable of taking divalence,
A semiconductor composed of at least one element selected from Group VI is a p-type semiconductor, and the implanted ions are Group III or VI.
Ions of Group I elements are preferred.

Further, in the above structure, it is preferable that the accelerating voltage of the ions is 10 keV or more and 1000 keV or less. Further, in the above structure, the implanted ions are nitrogen ions, and the acceleration voltage of the ions is 10 keV.
The semiconductor which is at least 1000 keV and is at least one element selected from the group II or divalent elements in the portion where the ions are implanted and at least one element selected from the group VI is an n-type semiconductor. It is preferable.

Further, in the above structure, the degree of vacuum is 10
It is preferably in the range of ^-5 Torr to 10 ^-9 Torr.

[0019]

According to the above-mentioned structure of the present invention, ions having an ion implantation amount of 10 ¹² to 10 ¹⁸ ions / cm ² are implanted into the n-type or p-type semiconductor layer of the II-VI group semiconductor device. By virtue of the presence of the electrically insulating portion, a II-VI semiconductor element having good thermal contact with the semiconductor material, good thermal conductivity, and sufficient electrically insulating portion can be realized.

When the II-VI group semiconductor is irradiated with ions, reflection / deposition of ions and sputtering of surface atoms occur when the energy of incident ions is low. However, the sufficiently accelerated ions penetrate into the II-VI group semiconductor and lose energy due to the interaction of the atoms forming the semiconductor with the nucleus (nuclear collision) and the interaction with the electron (electron collision). , Stop at a certain penetration depth.

In the nuclear collision between incident ions and semiconductor atoms, there occurs a phenomenon in which an atom is displaced from a lattice position, or an atom knocked out from the lattice position causes another atom to bounce off in a chain manner.
Lattice defects such as vacancies and interstitial atoms occur. In addition, dislocations and voids are formed by the movement and bonding of the lattice defects.

Since the carriers in the semiconductor are reflected and scattered by these defects, dislocations, etc., the mobility of carriers decreases. As a result, the electrical conductivity of the ion-implanted region is significantly reduced, and the resistance becomes practically high as an insulating layer.

The heat generated in the semiconductor element diffuses in the form of lattice vibration, but the lattice constants of the insulating layer and the n-type (or p-type) layer do not match, or a discontinuous interface exists. If so, the lattice vibration is scattered and reflected at the interface, and good thermal contact cannot be obtained.

In the production of the insulator according to the present invention, since there is no clear interface between the insulator and the p-type (or n-type) semiconductor, lattice vibration occurs from the n-type (or p-type) layer to the insulating layer. It can be propagated directly and good thermal contact is obtained.

Further, the thermal conductivity of the insulator is Si
Since it is higher than O ₂ and polyimide resin, the heat received from inside the semiconductor element can be quickly released to the outside. Further, according to the structure of the semiconductor laser device of the present invention, the amount of extinction is smaller than that of the conventional semiconductor laser device using an insulator such as SiO ₂ or polyimide, and the heat dissipation mechanism can be improved. Therefore, a semiconductor laser device having a long life can be realized.

In addition, in the method of manufacturing a semiconductor laser device of the present invention, most of the ions directly incident on the metal electrode pass through the metal electrode. Therefore, by implanting ions from the top of the metal electrode, the resistance was increased to the lower part II
-Group VI semiconductors can be produced.

On the other hand, the ions incident on the metal portion lose energy due to the interaction with the metal atom and stop inside the metal portion. Therefore, the ions do not reach the metal electrode or the laminated structure of the II-VI group semiconductors, the metal portion acts as a mask at the time of ion irradiation, and the high resistance does not occur below the metal portion.

As a result, no current flows in the ion-implanted II-VI semiconductor, and the current is confined only under the metal portion, so that the semiconductor laser device operates. In the method for manufacturing a semiconductor laser device of the present invention, the insulating layer can be brought sufficiently close to the active layer, so that the current is effectively confined, the current density in the active layer is improved, and the heat generation of the device is reduced. it can.

Further, since the metal part can be used as a part of the electrode, the process can be simplified. Further, when the element is fixed on the heat sink (radiator), the metal portion having high thermal conductivity is provided above the heat generating area of the element, so that the heat contact between the heat generating area and the heat sink is improved.

Due to such an action, the heat radiation of the semiconductor laser device is improved and the life is improved. In the electrically insulating portion of the II-VI group semiconductor device of the present invention, the ion implantation amount is 10 ¹²
Since ions in the range of -10 ¹⁸ ions / cm ² are implanted, the electrical resistivity is sufficiently high and the thermal conductivity is good.

The method for manufacturing an insulator of the present invention is useful as a method for manufacturing an insulating layer of a semiconductor device such as a semiconductor laser device, a light emitting diode device, an IC and an LSI. In particular, the effect of the present invention is exerted in the portion where the heat generated in the semiconductor due to the operation of the element needs to be diffused to the outside through the insulator.

Examples of the II-VI group semiconductor of the present invention include Zn,
II of at least one of Cd, Mg, Mn, Hg, Ca
It is preferable to use a compound composed of a group element and at least one group VI element of S, Se, and Te. II-VI group semiconductors obtained by selecting from the above elements (for example, Zn _x C
d _1-x S _y Se _1-y , Zn _x Cd _1-x S _y Te _1-y , Z
n _x Mg _1-x S _y Se _1-y , Zn _x Mn _1-x S _y Se
_1-y (mixed crystal such as 0 ≦ x ≦ 1, 0 ≦ y ≦ 1) can greatly change the lattice constant within the range of 0.53 nm to 0.67 nm. It can be matched with the lattice constant of the n-type (or p-type) layer of the semiconductor composition device. In addition, the II-VI group semiconductor obtained by selecting from the above elements has a band gap of 0 or less.
It can be largely changed in the range of eV to 4.2 eV, and the conductivity type can be easily controlled by adding p-type and n-type impurities.

By using ions of a group I or group V element such as hydrogen, nitrogen, lithium or phosphorus for an n-type group II-VI semiconductor as the incident ions of the present invention, the insulator can be more efficiently formed. Can be made. Ions of the group I or group V elements generate acceptor levels in the group II-VI semiconductor, and thus compensate the electrons which are the majority carriers in the n-type semiconductor and reduce the density thereof. As a result, an insulator having a high resistance can be obtained with a relatively low dose amount, and the crystal damage of the insulator can be reduced, and the thermal conductivity can be improved.

Similarly, for implantation into a p-type II-VI semiconductor,
It is preferable to use ions of Group III or Group VII elements such as chlorine, gallium, fluorine, and bromine that generate donor levels. Further, particularly when nitrogen and phosphorus are used as the implantation ions for the n-type II-VI semiconductor, the implanted ions do not diffuse into the II-VI semiconductor layer in the region where no ions are implanted, Stable device characteristics can be obtained against current and temperature rise during use.

The II-VI group semiconductor into which ions are implanted does not require heat treatment at a high temperature because light absorption due to defects is small. Also in the case of performing the heat treatment, the II-VI group semiconductor has a strong ionic bond property and the atoms easily move, so that the crystallinity can be recovered by the heat treatment at a low temperature in the range of 100 to 400 ° C. Therefore, the insulating layer can be formed by a simple process without deteriorating the semiconductor layer constituting the element due to heat damage.

The substrate temperature during ion implantation is 0 to 30.
Within the range of 0 ° C., the II-VI group semiconductor other than the ion-implanted portion is not damaged, and an electrically insulating portion with stable resistivity can be obtained. Further, the ion beam current density during ion implantation is 10
In the range of nA / cm ^{2 to 1} μA / cm ² , there is no damage to the II-VI group semiconductor other than the ion-implanted portion, and an electrically insulating portion can be efficiently obtained.

The acceleration voltage of the ions of the present invention is 10 keV.
It is desirable that it is not less than 1000 keV. Ions accelerated in this range can easily penetrate into the II-VI semiconductor, suppress the sputtering rate to a relatively low level, and do not cause a nuclear reaction with the atoms of the II-VI semiconductor. .

The film thickness of the insulator produced by the present invention can be controlled by changing the acceleration voltage of implanted ions. For example, when implanting nitrogen ions into ZnSe, which is a II-VI group semiconductor, the acceleration voltage is changed from 10 keV to 1
By changing between 000 keV, 10 nm-
An insulator having a film thickness in the range of 10 μm can be manufactured. However, since the boundary between the electrical insulator and the semiconductor is not clear in the continuous layer, it is difficult to determine the exact film thickness.

Gold can be used as the metal portion of the present invention. Gold has good thermal and electrical conductivity. Further, since gold has a large atomic weight, implanted ions can be effectively blocked.

Incident ions from 10 keV to 1000
When nitrogen accelerated by keV is used and gold is used as the metal portion, incident ions can be effectively blocked by setting the thickness of the metal portion to 0.1 μm or more and 10 μm or less.

When the insulator produced by the method of the present invention is used as the current confinement layer, the current confinement layer can be brought sufficiently close to the active layer, and the active layer can be sandwiched between the insulators. Even if an n-type semiconductor is used in the upper portion, the current can be sufficiently confined. In particular, for n-type II-VI semiconductors, a metal electrode having good ohmic properties and low contact resistance can be used as the upper electrode. Therefore, it is possible to reduce the operating voltage of the device and reduce heat generation in the upper electrode.

Even when a p-type semiconductor is used above the active layer, a more effective current confinement can be achieved than with a conventional insulator, so that the current density in the active layer is improved and the oscillation threshold current of the device is reduced.

[0043]

EXAMPLES The present invention will be described more specifically below with reference to examples. Example 1 First, a ZnSe thin film, which is a single crystal II-VI group semiconductor, was formed to a thickness of 1.8 μm on a GaAs substrate by a molecular beam epitaxial growth (MBE) method.
Here, the growth temperature is 200 to 400 ° C., and the degree of vacuum is 1 × 1.
It is 0 ^-8 Torr. At the time of growth, 2 × 10 ¹⁸ chlorine was added.
Only cm ^{-3 was} added to make the ZnSe thin film n-type. This n
Type ZnSe thin film had a resistivity of 0.08 Ω · cm.

Then, the n-type ZnSe thin film is subjected to 350
Hydrogen ions accelerated with an acceleration voltage of keV were implanted. Here, the implantation angle is 7 degrees and the dose amount is 1 × 10 ¹⁵ ions / c
m ² , ion current density 23 nA / cm ² , substrate temperature 1
It was set to 00 ° C. By this ion implantation, the resistivity of the n-type ZnSe thin film became 1 × 10 ⁴ Ω · cm or more, which was a resistance value that could be sufficiently used as an insulating layer of a semiconductor device such as a current confinement layer of a semiconductor laser device.

The reason why a practical resistance value can be obtained as an insulating layer of a semiconductor element is considered to be as follows. That is, sufficiently accelerated ions penetrate into the II-VI group semiconductor and lose energy by interacting with the atomic nucleus of the semiconductor (nuclear collision) or with electrons (electron collision), Stop at a certain penetration depth. In a nuclear collision between an incident ion and a semiconductor atom, an atom is displaced from the lattice position, or an atom knocked out from the lattice position causes another atom to bounce off another atom in a chain. Defects occur. Further, dislocations and voids are formed by the movement and bonding of the lattice defects. The carriers in the semiconductor are reflected and scattered by these lattice defects, dislocations, etc., and their mobility is reduced. As a result, the electrical conductivity of the ion-implanted region is significantly reduced, and the resistance value becomes a practical value as an insulating layer of a semiconductor element.

The thermal conductivity of the insulator of this example is 15
It was W / m · k. In contrast, the conventional SiO ₂ insulator had a thermal conductivity of 1.4 W / m · k, and the polyimide resin had a thermal conductivity of 0.3 W / m · k.

Example 2 Next, a II-VI group semiconductor laser device will be described. First, as shown in FIG.
On the type GaAs substrate 2 by the MBE method.
A QW-SCH (single quantum well type separated confinement hetero) structure 3 was formed, and a mask 4 was formed thereon. Here, the mask 4 is for blocking the implanted ions and leaving a low resistance current injection region. Then, the metal electrode 1 was vapor-deposited under the p-type GaAs substrate 2.

This structure (FIG. 1) has 350 ke
Nitrogen ions accelerated with an acceleration voltage of V were implanted. Here, the implantation angle is 7 degrees and the dose amount is 1 × 10 ¹⁵ ions / cm ² . As a result, nitrogen ions were implanted into a region other than immediately below the mask 4, and a current constricting layer 6 of an insulator was formed as shown in FIG. Then, after removing the mask 4, the metal electrode 5 was vapor-deposited on the current confinement layer 6 to manufacture the semiconductor laser element 7. 1 and 2, 3a and 3c are p
-Type ZnSe layer, 3b is p-type ZnSSe layer, 3d is ZnC
dSe active layer, 3e, 3g are n-type ZnSe layers, 3f are n
Type ZnSSe layer.

The semiconductor laser device 7 obtained as described above oscillated at a wavelength of 520 nm and a threshold current of 360 mA, and the device voltage at this time was 3V. In contrast,
A semiconductor laser device having the same laser structure, stripe shape, and oscillation wavelength but using conventional SiO ₂ or polyimide as the current confinement layer oscillated at a threshold current of 930 mA, and the device voltage at this time was 39V.

As described above, by using the insulator formed by implanting nitrogen ions into the n-type II-VI group semiconductor as the current confinement layer 6, the threshold current could be reduced by 570 mA. As a result, the element efficiency when the output was 1 mW could be tripled, and the heat generation amount of the element could be reduced to one third or less.

By the way, the heat generated in the semiconductor element is
Diffuses in the form of lattice vibrations, but with an insulating layer and n-type (or p
If the lattice constants of the (type) layer do not match or if a discontinuous interface is present, lattice vibration is scattered and reflected at the interface, and good thermal contact cannot be obtained.

However, when the current confinement layer 6 is formed as described above, the injected ions are scattered almost randomly in the II-VI semiconductor and stop, and the stop position of the ions has a distribution called an injection distribution. Will have. Therefore, the resistivity of the ion-implanted region increases according to the implantation amount,
There is no clear interface between the insulator and the p-type (or n-type) semiconductor. Therefore, the lattice vibration can be directly propagated from the n-type (or p-type) layer to the current confinement layer (insulator) 6, and good thermal contact can be obtained. Also,
The current confinement layer (insulator) 6 mainly composed of the II-VI group semiconductor has a higher thermal conductivity than SiO ₂ or polyimide resin. Therefore, the heat generated in the semiconductor element can be quickly released to the outside.

As described in detail above, the semiconductor laser device 7 of the second embodiment generates less heat than the conventional semiconductor laser device using an insulator such as SiO ₂ or polyimide, and has an improved heat dissipation mechanism. As a result, the life can be extended 1.5 to 5 times, and the durability can be improved.

The element which was heat-treated at 300 ° C. for 5 minutes after ion implantation also showed similar characteristics. In the second embodiment, the current confinement layer (insulator) 6 is made of ZnCdSe.
Although it is formed above the active layer 3d, the current confinement layer (insulator) 6 can be formed below the ZnCdSe active layer 3d by increasing the acceleration voltage of implanted ions.

In the second embodiment, the single quantum well type semiconductor laser device having the stripe structure has been described as an example, but the present invention is not necessarily limited to the semiconductor laser device having this structure. It can also be applied to a semiconductor laser device having another structure such as a multi-quantum well type.

(Embodiment 3) In this embodiment, first, the ZnSe-based SQW-SCH structure 3 shown in FIG. 3 is formed on the p-type GaAs substrate 2 by the MBE method, and the metal electrode 8 is formed thereon.
Was produced. Each layer constituting the ZnSe-based SQW-SCH structure 3: p-type ZnSe layer 3a, p-type ZnSSe layer 3b,
p-type ZnSe layer 3c, ZnCdSe layer (active layer) 3d,
n-type ZnSe layer 3e, n-type ZnSSe layer 3f, n-type Zn
The Se layer 3g was formed by the same method as in Example 2. A laminated film of titanium and gold prepared by electron beam evaporation was used for the metal electrode 8, and the film thickness was 30 nm. Further thereon, a striped metal portion 9 having a width of 10 μm and a film thickness of 3 μm was formed by gold electrolytic plating. The metal electrode 1 was formed on the lower part of the substrate.

Nitrogen ions accelerated at an acceleration voltage of 350 keV were implanted into this structure from above. The implantation angle was 7 degrees and the dose was 1 × 10 ¹⁵ ions / cm ² . Most of the ions directly incident on the metal electrode 8 pass through this, and
The current confinement layer 10 having a high resistance was formed by entering the group VI semiconductor layer.

On the other hand, the ions incident on the metal portion 9 lost energy due to the interaction with the gold atom and stopped inside the metal portion 9. Therefore, the ions do not reach the metal electrode 8 or the semiconductor layer, and only the lower portion of the metal portion 9 does not have a high resistance, so that a gain waveguide type laser structure is formed.

Since the metal part 9 is used as a part of the electrode, the process is simplified, and the thermal contact with the heat sink is improved, so that the heat dissipation of the element is improved. The semiconductor laser device 11 thus produced has a reduced heat generation and improved heat dissipation as compared with a conventional laser using an insulator such as SiO ₂ or polyimide. Therefore, its life can be increased from 2 to 7 times. It was

Although heat treatment after ion implantation is not performed in this embodiment, heat treatment at a low temperature of 100 ° C. to 400 ° C. can reduce damage in the crystal and reduce light absorption.

Although the insulating layer is formed above the active layer in this embodiment, the insulating layer can be formed below the active layer by increasing the acceleration voltage of implanted ions.

[0062]

As described above, according to the present invention, ions having an ion implantation amount of 10 ¹² to 10 ¹⁸ ions / cm ² are implanted into the n-type or p-type semiconductor layer of the II-VI group semiconductor device. By virtue of the presence of the electrically insulating portion, a II-VI semiconductor element having good thermal contact with the semiconductor material, good thermal conductivity, and sufficient electrically insulating portion can be realized.

The present invention also provides a semiconductor laser device using, as the current confinement layer, an insulator produced by implanting ions into n-type and p-type II-VI group semiconductors.
It has the effects of lowering the operating voltage, reducing the oscillation threshold current, improving heat dissipation, and improving the life.

The present invention also relates to II-VI formed on a substrate.
A laminated structure of a group semiconductor, a metal electrode provided on the entire one surface of the laminated structure, and a metal portion provided in a convex shape on a portion of the metal electrode, and at least a portion other than the metal portion. Since the laminated structure adjacent to the metal electrode is a semiconductor laser device that is the II-VI group semiconductor whose resistance is increased by ion implantation, the operating voltage is lowered, the oscillation threshold current is reduced, and heat dissipation is improved. , Has the effect of improving the life.

The present invention also relates to II-VI formed on a substrate.
Laminated film forming step of forming a metal electrode on one entire surface of laminated structure of group semiconductor, metal part forming step of providing a metal part in a convex shape on a part of the metal electrode after the laminated film forming step, and metal part forming step Since it is a method of manufacturing a semiconductor laser device including an ion implantation step of implanting ions through the metal portion later, it has the effects of lowering the operating voltage, reducing the oscillation threshold current, improving heat dissipation, and improving the life. is there.

[Brief description of drawings]

FIG. 1 is a conceptual cross-sectional view of a semiconductor laser before implanting ions according to a second embodiment of the present invention.

FIG. 2 is a conceptual cross-sectional view of a semiconductor laser after implanting ions according to a second embodiment of the present invention.

FIG. 3 is a conceptual sectional view of a semiconductor laser of Example 3 of the present invention.

[Explanation of symbols]

 1 metal electrode 2 p-type GaAs substrate 3 ZnSe-based SQW-SCH structure 3a p-type ZnSe layer 3b p-type ZnSSe layer 3c p-type ZnSe layer 3d ZnCdSe layer (active layer) 3e n-type ZnSe layer 3f n-type ZnSSe layer 3g n-type ZnSe layer 4 Mask 5 Metal electrode 6 Current constriction layer (insulator) 7 Semiconductor laser element 8 Metal electrode 9 Metal part 10 Current constriction layer (insulator) 11 Semiconductor laser element

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tsuneo Mikuro 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (20)

[Claims] 1. An ion implantation amount into an n-type or p-type semiconductor layer of a semiconductor device comprising at least one element selected from group II or elements capable of taking divalence and at least one element selected from group VI. Is 10 ¹² to 10 ¹⁸ ions / cm ²
A semiconductor device having an electrically insulating portion implanted with ions in the range. 2. The film thickness of the electrically insulating portion is 10 nm to 10 nm.
The semiconductor device according to claim 1, having a range of μm. 3. Zn, Cd, Mg, M as a semiconductor
A compound comprising at least one group II element selected from n, Hg and Ca or at least one element selected from divalent elements and at least one group VI element selected from S, Se and Te is used. 1. The semiconductor device according to 1. 4. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor laser device. 5. The semiconductor device according to claim 4, wherein an electrically insulating portion is present as the current confinement layer of the semiconductor laser device. 6. An n-type semiconductor laser device, wherein the semiconductor laser device comprises at least one element selected from the group II or divalent elements formed on the substrate and at least one element selected from the group VI. Alternatively, it has a laminated structure of a p-type semiconductor, a metal electrode provided on one entire surface of the laminated structure, and a metal portion provided in a convex shape on a part of the metal electrode, and at least other than the metal portion. 5. The semiconductor element according to claim 4, wherein the laminated structure adjacent to the metal electrode in the portion is electrically insulating by ion implantation. 7. An ion implantation method under high vacuum in an n-type or p-type semiconductor layer comprising at least one element selected from group II or elements capable of taking divalence and at least one element selected from group VI. The dose amount is 10 ¹² to 10 ¹⁸
A method of manufacturing a semiconductor element, which comprises implanting ions in a range of ions / cm ² to form an electrically insulating portion. 8. The method of manufacturing a semiconductor device according to claim 7, wherein the implantation angle at the time of ion implantation is in the range of 0 to 10 °. 9. The substrate temperature at the time of ion implantation is 0 to 300 ° C.
The method for manufacturing a semiconductor device according to claim 7, wherein 10. The ion beam current density at the time of ion implantation is in the range of 10 nA / cm ^{2 to 1} μA / cm ^2.
A method of manufacturing a semiconductor device according to item 1. 11. The method of manufacturing a semiconductor device according to claim 7, wherein the semiconductor device is a semiconductor laser device, and an electrically insulating portion is formed as a current confinement layer of the semiconductor laser device. 12. The semiconductor element is a semiconductor laser element, and a semiconductor formed of at least one element selected from the group II or divalent elements formed on the substrate and at least one element selected from the group VI. 8. A metal electrode is formed on the entire surface of one surface of the laminated structure of, and then a metal portion is formed in a convex shape on a part of the metal electrode, and then ions are implanted through the metal portion. Of manufacturing a semiconductor device of. 13. The method of manufacturing a semiconductor device according to claim 6, wherein the metal portion has a stripe shape. 14. The film thickness of the metal electrode is 10 nm or more and 1 μm.
The semiconductor device according to claim 6 or claim 1 below.
2. The method for manufacturing a semiconductor device according to 2. 15. The metal film having a thickness of 0.1 μm or more 10
The semiconductor element according to claim 6 or the method for manufacturing a semiconductor element according to claim 12, which has a thickness of not more than μm. 16. A semiconductor comprising at least one element selected from the group II or elements capable of taking divalence and at least one element selected from the group VI is an n-type semiconductor,
The method of manufacturing a semiconductor device according to claim 6 or a semiconductor device according to claim 11, wherein the implanted ions are ions of a group I or group V element. 17. A semiconductor comprising at least one element selected from the group II or the elements capable of taking divalence and at least one element selected from the group VI is a p-type semiconductor,
The method for producing a semiconductor device according to claim 6 or a semiconductor device according to claim 11, wherein the implanted ions are ions of a group III or group VII element. 18. The method for manufacturing a semiconductor device according to claim 11, wherein the acceleration voltage of the ions is 10 keV or more and 1000 keV or less. 19. The implanted ions are nitrogen ions,
Ion acceleration voltage is 10 keV or more and 1000 keV
At least one element selected from the group II or the elements capable of taking divalence, which is V or less,
The method for manufacturing a semiconductor device according to claim 12, wherein the semiconductor made of at least one element selected from Group VI is an n-type semiconductor. 20. The method of manufacturing a semiconductor device according to claim 7, wherein the degree of vacuum is in the range of 10 ⁻⁵ Torr to 10 ⁻⁹ Torr.