JPH06333907A - Cleaning and processing device - Google Patents

Cleaning and processing device

Info

Publication number
JPH06333907A
JPH06333907A JP14702293A JP14702293A JPH06333907A JP H06333907 A JPH06333907 A JP H06333907A JP 14702293 A JP14702293 A JP 14702293A JP 14702293 A JP14702293 A JP 14702293A JP H06333907 A JPH06333907 A JP H06333907A
Authority
JP
Japan
Prior art keywords
cleaning
plate
processing
treatment liquid
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14702293A
Other languages
Japanese (ja)
Other versions
JP3003017B2 (en
Inventor
Naohiko Hamamura
直彦 濱村
Shinya Murakami
信也 村上
Yasuhiro Nagano
泰博 長野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron Kyushu Ltd filed Critical Tokyo Electron Ltd
Priority to JP5147022A priority Critical patent/JP3003017B2/en
Priority to US08/172,419 priority patent/US5503171A/en
Publication of JPH06333907A publication Critical patent/JPH06333907A/en
Application granted granted Critical
Publication of JP3003017B2 publication Critical patent/JP3003017B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To improve the cleaning and processing efficiency of a cleaning and processing device by making the flow of a cleaning and processing liquid uniform in a processing vessel. CONSTITUTION:A straightening means 20 is provided between semiconductor wafers W dipped in a cleaning and processing liquid contained in a processing vessel 15 equipped with a cleaning and processing liquid inlet 17 in its lower section and the inlet 17. The means 20 is constituted of a straightening plate 22 which is set in a horizontal position so as to divide the inside of the vessel 15 into an upper and lower sections and have numerous small holes 21 bored through the plate 22 and spreading plate 24 positioned above the inlet 17. In addition, flow arresting walls 23 are formed downward from the edge section of the plate 22 so as to arrest the flow of the liquid. Therefore, the difference between the flows of the liquid flowing through the holes 21 of the plate 22 can be reduced by arresting part of the liquid flowing toward the gap 19 between the vessel 15 and plate 22 and the occurrence of turbulent flows in the liquid flowing upward in the vessel 15.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、洗浄処理装置に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning processing apparatus.

【0002】[0002]

【従来の技術】一般に、半導体製造工程においては、被
処理体である半導体ウエハ(以下にウエハという)の表
面に付着したパーティクル、有機汚染物、金属不純物等
のコンタミネーションあるいは表面に形成された自然酸
化膜等を除去するために洗浄処理装置が使用されてい
る。この種の洗浄処理装置は、ウエハに対してアンモニ
ア処理、水洗処理、フッ酸処理、硫酸処理、塩酸処理、
水洗処理等のように薬液処理と水洗処理が例えば交互に
行われる。
2. Description of the Related Art Generally, in a semiconductor manufacturing process, contamination of particles, organic contaminants, metal impurities, etc. adhered to the surface of a semiconductor wafer (hereinafter referred to as a wafer) which is an object to be processed, or natural formation on the surface. A cleaning processing apparatus is used to remove an oxide film and the like. This type of cleaning processing apparatus is used for processing wafers with ammonia, water, hydrofluoric acid, sulfuric acid, hydrochloric acid,
For example, a chemical treatment and a water washing treatment such as a water washing treatment are alternately performed.

【0003】従来の薬液処理用の洗浄処理装置や水洗用
の洗浄処理装置は、一般的には同一構造とされており、
例えば図14に示すように、下方部に洗浄処理液の供給
口bを有する処理槽aと、この処理槽a内に収容される
洗浄処理液L(純水又は薬液)中にウエハWを浸漬すべ
く保持するウエハ保持具cと、洗浄処理液L中に浸漬さ
れるウエハWと供給口bとの間に配置される整流手段d
とを具備してなる。この場合、整流手段dは多数の小孔
eを穿設する石英製の整流板fと、供給口bの上方に配
置される拡散板gとで構成されており、整流板fによっ
て供給口bから処理槽a内に供給される洗浄処理液を整
流化して処理槽a内に流し、供給口b側の速い流れを拡
散板gによって拡散する構造になっている。
Conventional cleaning treatment apparatuses for chemical liquid treatment and cleaning treatment apparatuses for water washing generally have the same structure.
For example, as shown in FIG. 14, a wafer W is immersed in a processing bath a having a cleaning treatment liquid supply port b in the lower portion thereof and a cleaning treatment liquid L (pure water or chemical liquid) contained in the processing bath a. A wafer holder c that holds the wafer as much as possible, and a rectifying means d that is arranged between the wafer W immersed in the cleaning processing liquid L and the supply port b.
And. In this case, the rectifying means d is composed of a quartz rectifying plate f having a large number of small holes e and a diffusion plate g arranged above the supply port b, and the rectifying plate f supplies the supply port b. The cleaning treatment liquid supplied from the above into the treatment tank a is rectified and flowed into the treatment tank a, and the fast flow on the supply port b side is diffused by the diffusion plate g.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、従来の
この種の洗浄処理装置においては、整流板fが石英製で
あるため、加工上の精度の点から処理槽aと整流板fと
の間に隙間h(約1mm程度)をあけなければならなかっ
た。したがって、この隙間hを通る洗浄処理液の流れが
整流板fの小孔eを通る洗浄処理液の流れよりも速く流
れて乱流を起こし、処理槽a内の流れを不均一にしてい
た。また、供給口bの上方に位置する拡散板gにより、
この拡散板gの上方のウエハW間の洗浄処理液の流れが
他のウエハW間よりも遅くなるため、処理槽a内の洗浄
処理液の流れ分布が図14に示すような不均一な状態と
なっていた。したがって、ウエハWの洗浄処理能率の低
下を招くと共に、最終工程の純水による洗浄処理工程に
おいて所定の比抵抗値まで洗浄するのに多量の純水を使
用しなければならないという問題があった。
However, in the conventional cleaning processing apparatus of this type, since the flow straightening plate f is made of quartz, it is placed between the processing tank a and the straightening plate f from the viewpoint of processing accuracy. A gap h (about 1 mm) had to be opened. Therefore, the flow of the cleaning treatment liquid passing through the gap h flows faster than the flow of the cleaning treatment liquid passing through the small holes e of the straightening vanes f to generate turbulent flow, thus making the flow in the treatment tank a non-uniform. Further, due to the diffusion plate g located above the supply port b,
Since the flow of the cleaning processing liquid between the wafers W above the diffusion plate g becomes slower than that between the other wafers W, the flow distribution of the cleaning processing liquid in the processing bath a is non-uniform as shown in FIG. It was. Therefore, there is a problem that the cleaning efficiency of the wafer W is lowered and a large amount of pure water must be used for cleaning up to a predetermined specific resistance value in the final cleaning process with pure water.

【0005】この発明は上記事情に鑑みなされたもの
で、洗浄処理液の処理槽内流れを均一にすると共に、洗
浄処理能率の向上及び比抵抗回復特性の改善を図れるよ
うにした洗浄処理装置を提供することを目的とするもの
である。
The present invention has been made in view of the above circumstances, and provides a cleaning treatment apparatus capable of uniformizing the flow of the cleaning treatment liquid in the treatment tank, improving the efficiency of the cleaning treatment, and improving the resistivity recovery characteristic. It is intended to be provided.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に、この発明の第1の洗浄処理装置は、下方部に洗浄処
理液の供給口を有する処理槽と、この処理槽内に収容さ
れる洗浄処理液中に浸漬される被処理体と上記供給口と
の間に配置される整流手段とを具備する洗浄処理装置を
前提とし、上記整流手段を、上記処理槽を上下に区画す
べく水平に配置されると共に多数の小孔を穿設した整流
板と、上記供給口の上方に位置する拡散板とで構成し、
上記整流板の縁部から下方に向って垂下する洗浄処理液
の阻流壁を形成してなることを特徴とするものである。
In order to achieve the above object, the first cleaning processing apparatus of the present invention has a processing tank having a cleaning processing solution supply port at its lower portion, and is housed in this processing tank. Based on the premise that the cleaning treatment apparatus is provided with the object to be treated which is immersed in the cleaning treatment liquid and the rectifying means arranged between the supply port, the rectifying means is for dividing the treatment tank into upper and lower parts. It is composed of a straightening plate that is arranged horizontally and has a large number of small holes, and a diffusion plate that is located above the supply port.
The present invention is characterized in that a blocking wall for the cleaning treatment liquid is formed so as to hang downward from the edge of the current plate.

【0007】また、この発明の第2の洗浄処理装置は、
上記第1の洗浄処理装置と同様、下方部に洗浄処理液の
供給口を有する処理槽と、この処理槽内に収容される洗
浄処理液中に浸漬される被処理体と上記供給口との間に
配置される整流手段とを具備する洗浄処理装置を前提と
し、上記整流手段を、上記処理槽を上下に区画すべく水
平に配置されると共に多数の小孔を穿設した整流板と、
上記供給口の上方に位置する拡散板とで構成し、上記拡
散板の周縁から下方に向って垂下する洗浄処理液の阻流
壁を形成すると共に、拡散板に洗浄処理液の流通孔を穿
設してなることを特徴とするものである。
The second cleaning processing apparatus of the present invention,
Similar to the first cleaning processing apparatus, a processing tank having a cleaning processing solution supply port at a lower portion thereof, an object to be processed immersed in the cleaning processing solution housed in the processing tank, and the supply port. Assuming a cleaning processing apparatus having a rectifying means arranged between the rectifying means, the rectifying means is horizontally arranged to vertically divide the processing tank, and a rectifying plate having a large number of small holes formed therein,
And a diffusion plate located above the supply port to form a blocking wall for the cleaning treatment liquid that hangs downward from the peripheral edge of the diffusion plate, and a diffusion hole for the cleaning treatment liquid is formed in the diffusion plate. It is characterized by being installed.

【0008】また、この発明の第3の洗浄処理装置は、
上記第1及び第2の洗浄処理装置と同様、下方部に洗浄
処理液の供給口を有する処理槽と、この処理槽内に収容
される洗浄処理液中に浸漬される被処理体と上記供給口
との間に配置される整流手段とを具備する洗浄処理装置
を前提とし、上記整流手段を、上記処理槽を上下に区画
すべく水平に配置されると共に多数の小孔を穿設した整
流板と、上記供給口の上方に位置する拡散板とで構成
し、上記整流板の縁部から下方に向って垂下する洗浄処
理液の阻流壁を形成し、上記拡散板の周縁から下方に向
って垂下する洗浄処理液の阻流壁を形成すると共に、拡
散板に洗浄処理液の流通孔を穿設してなることを特徴と
するものである。
The third cleaning processing apparatus of the present invention is
Similar to the above first and second cleaning processing apparatuses, a processing tank having a cleaning processing solution supply port at a lower portion thereof, an object to be processed immersed in the cleaning processing solution housed in the processing tank, and the above-mentioned supply. Assuming a cleaning processing apparatus including a rectifying means arranged between the mouth and the mouth, the rectifying means is horizontally arranged to divide the processing tank into upper and lower parts, and a large number of small holes are formed in the rectifying means. And a diffusion plate located above the supply port to form a blocking wall for the cleaning treatment liquid that hangs downward from the edge of the rectifying plate, and extends downward from the peripheral edge of the diffusion plate. The present invention is characterized in that it forms a baffle wall for the cleaning treatment liquid that hangs down and forms a circulation hole for the cleaning treatment liquid in the diffusion plate.

【0009】[0009]

【作用】上記のように構成されるこの発明の洗浄処理装
置によれば、整流手段を、処理槽を上下に区画すべく水
平に配置されると共に多数の小孔を穿設した整流板と、
供給口の上方に位置する拡散板とで構成し、整流板の縁
部から下方に向って垂下する洗浄処理液の阻流壁を形成
することにより、処理槽と整流板の隙間に向って流れる
洗浄処理液の一部が阻流壁によって阻止されるので、隙
間を通る洗浄処理液の流れが遅くなり、整流板の小孔を
流れる洗浄処理液の流れとの差を少なくすることがで
き、処理槽内を上昇する洗浄処理液に乱流が起きるのを
防止することができる。
According to the cleaning processing apparatus of the present invention configured as described above, the rectifying means is horizontally arranged to divide the processing tank into upper and lower parts, and a rectifying plate having a large number of small holes formed therein.
It is composed of a diffusion plate located above the supply port, and forms a baffle wall for the cleaning treatment liquid that hangs downward from the edge of the straightening plate, so that it flows toward the gap between the processing tank and the straightening plate. Since a part of the cleaning treatment liquid is blocked by the baffle wall, the flow of the cleaning treatment liquid through the gap becomes slow, and the difference with the flow of the cleaning treatment liquid flowing through the small holes of the straightening vane can be reduced. It is possible to prevent turbulence from occurring in the cleaning treatment liquid rising in the treatment tank.

【0010】また、拡散板の周縁から下方に向って垂下
する洗浄処理液の阻流壁を形成すると共に、拡散板に洗
浄処理液の流通孔を穿設することにより、供給口から処
理槽内に導入される洗浄処理液の一部が阻流壁によって
拡散板の下方に取り込まれ、取り込まれた洗浄処理液は
拡散板の流通孔から上方へ流れる。したがって、拡散板
の上方の被処理体間の洗浄処理液の流れと他の被処理体
間の流れとを均一化することができ、洗浄処理能率の向
上を図ることができる。
Further, by forming a blocking wall for the cleaning treatment liquid which hangs downward from the peripheral edge of the diffusion plate and forming a flow hole for the cleaning treatment liquid in the diffusion plate, the inside of the treatment tank is supplied from the supply port. Part of the cleaning treatment liquid introduced into the above is taken in below the diffusion plate by the baffle wall, and the taken cleaning treatment liquid flows upward from the flow hole of the diffusion plate. Therefore, the flow of the cleaning treatment liquid between the objects to be treated above the diffusion plate and the flow between the other objects to be treated can be made uniform, and the efficiency of the cleaning treatment can be improved.

【0011】また、整流板の縁部から下方に向って垂下
する洗浄処理液の阻流壁を形成し、拡散板の周縁から下
方に向って垂下する洗浄処理液の阻流壁を形成すると共
に、拡散板に洗浄処理液の流通孔を穿設することによ
り、供給口から処理槽内に導入される洗浄処理液の一部
が阻流壁によって拡散板の下方に取り込まれて拡散板の
流通孔から上方へ流れる。一方、処理槽と整流板の隙間
に向って流れる洗浄処理液の一部が阻流壁によって阻止
されて、隙間を通る洗浄処理液の流れが遅くなり、整流
板の小孔を流れる洗浄処理液の流れとの差を少なくする
ことができる。したがって、洗浄処理液の乱流を防止す
ることができると共に、洗浄処理液の処理槽内への流れ
の均一化を更に確実にすることができる。
Further, a baffle wall for the cleaning treatment liquid that hangs downward from the edge of the straightening plate is formed, and a baffle wall for the cleaning treatment liquid that hangs downward from the peripheral edge of the diffusion plate is formed. By forming a through hole for the cleaning treatment liquid in the diffusion plate, a part of the cleaning treatment liquid introduced from the supply port into the treatment tank is taken in below the diffusion plate by the baffle wall to distribute the diffusion plate. Flows upward from the hole. On the other hand, a part of the cleaning treatment liquid flowing toward the gap between the treatment tank and the straightening vane is blocked by the baffle wall, the flow of the cleaning treatment liquid passing through the gap is delayed, and the cleaning treatment liquid flowing through the small holes of the straightening vane. The difference with the flow of can be reduced. Therefore, it is possible to prevent the turbulent flow of the cleaning treatment liquid and further ensure the uniformization of the flow of the cleaning treatment liquid into the processing tank.

【0012】[0012]

【実施例】以下にこの発明の実施例を図面に基いて詳細
に説明する。ここでは、この発明の洗浄処理装置を半導
体ウエハの洗浄処理装置に適用した場合について説明す
る。
Embodiments of the present invention will be described in detail below with reference to the drawings. Here, a case where the cleaning processing apparatus of the present invention is applied to a semiconductor wafer cleaning processing apparatus will be described.

【0013】半導体ウエハの洗浄処理装置は、図1に示
すように、未処理の被処理体である半導体ウエハW(以
下にウエハという)を収容する搬入部1と、ウエハ搬送
装置2によって搬送されるウエハWを薬液処理、水洗処
理等の洗浄処理を行う洗浄処理部3と、洗浄後のウエハ
Wを収容する搬出部4とで主要部が構成されている。
As shown in FIG. 1, the semiconductor wafer cleaning apparatus is carried by a carry-in section 1 for accommodating a semiconductor wafer W (hereinafter referred to as a wafer) which is an unprocessed object and a wafer carrying apparatus 2. A cleaning processing unit 3 that performs a cleaning process such as a chemical process and a water cleaning process on the wafer W to be cleaned, and a carry-out unit 4 that accommodates the wafer W after cleaning constitute a main part.

【0014】搬入部1は、ウエハWを収納するキャリア
Cの待機部6と、キャリアCからのウエハWの取り出
し、オリフラ合せ及びウエハWの枚葉検出等を行うロー
ダ部5と、外部から搬入されるキャリアCの待機部6へ
の搬送及び待機部6とローダ部5間のキャリアCの移送
を行うキャリア搬送アーム7とを具備する。
The carry-in section 1 includes a waiting section 6 for the carrier C for storing the wafer W, a loader section 5 for taking out the wafer W from the carrier C, aligning the orientation flat, and detecting the single wafer of the wafer W, and the like. The carrier transport arm 7 is provided for transporting the carrier C to the standby unit 6 and transporting the carrier C between the standby unit 6 and the loader unit 5.

【0015】また、洗浄処理部3の上方には、上記ウエ
ハ搬送装置2によってウエハWが取り出された後の空の
キャリアCを洗浄、乾燥処理するキャリア洗浄・乾燥ラ
イン8が上記洗浄処理部3に沿って配設されている。そ
して、このキャリア洗浄・乾燥ライン8には昇降機構9
を介して空のキャリアCをローダ部5から持ち上げて供
給するように構成されている。また、搬出部4側にも同
様の昇降機構(図示せず)が配設され、この昇降機構を
介して洗浄、乾燥後のキャリアCを搬出部4へ供給する
ように構成されている。なお、洗浄処理部3の背面側に
は薬液等の処理液を収容するタンクや配管群(図示せ
ず)を含む処理液タンク・配管領域10が設けられてい
る。
A carrier cleaning / drying line 8 for cleaning and drying the empty carrier C after the wafer W is taken out by the wafer transfer device 2 is provided above the cleaning processing unit 3 above. Are arranged along. The carrier cleaning / drying line 8 has a lifting mechanism 9
The empty carrier C is configured to be lifted from the loader unit 5 and supplied via the. A similar lifting mechanism (not shown) is also provided on the unloading unit 4 side, and the carrier C after cleaning and drying is supplied to the unloading unit 4 via this lifting mechanism. A treatment liquid tank / pipe region 10 including a tank and a pipe group (not shown) for containing a treatment liquid such as a chemical liquid is provided on the back side of the cleaning treatment unit 3.

【0016】一方、上記洗浄処理部3は、ウエハ搬送装
置2と、このウエハ搬送装置2のウエハチャック2aを
洗浄、乾燥するチャック洗浄・乾燥処理槽11と、この
チャック洗浄・乾燥処理槽11の下流側に順次配設され
かつウエハW表面の有機汚染物、金属不純物あるいはパ
ーティクル等の不要物質を洗浄により処理する第1の薬
液洗浄処理装置12a、薬液処理後のウエハWを水洗す
る2つの第1及び第2の水洗洗浄処理装置13a,13
b、上記第1の薬液洗浄処理装置12aとは別の薬液処
理を行う第2の薬液洗浄処理装置12b、2つの第3及
び第4の水洗洗浄処理装置13c,13dと、ウエハチ
ャック2aを洗浄、乾燥するチャック洗浄・乾燥処理槽
11と、不純物質が除去されたウエハWを例えばイソプ
ロピルアルコール(IPA)等で蒸気乾燥する乾燥処理
槽14とを具備してなる。そして、上記第1及び第2の
薬液洗浄処理装置12a,12b及び第1ないし第4の
水洗洗浄処理装置13a〜13dは、それぞれ洗浄処理
液がオーバーフローし、水洗処理の場合は、そのオーバ
ーフローした洗浄処理液を排出し、薬液処理の場合は、
オーバーフローした洗浄処理液を循環させて蓄積された
不純物を除去して循環使用する処理槽15を具備してい
る。
On the other hand, the cleaning processing section 3 includes the wafer transfer device 2, a chuck cleaning / drying processing tank 11 for cleaning and drying the wafer chuck 2a of the wafer transfer device 2, and the chuck cleaning / drying processing tank 11. A first chemical cleaning device 12a, which is sequentially disposed on the downstream side and processes unnecessary substances such as organic contaminants, metal impurities or particles on the surface of the wafer W by cleaning, and two second chemical cleaning devices 12a for cleaning the wafer W after chemical cleaning. 1st and 2nd water washing processing equipment 13a, 13
b, a second chemical cleaning treatment device 12b that performs a chemical treatment different from the first chemical cleaning treatment device 12a, two third and fourth water cleaning treatment devices 13c and 13d, and the wafer chuck 2a. A chuck cleaning / drying treatment tank 11 for drying and a drying treatment tank 14 for vapor-drying the wafer W from which impurities have been removed with, for example, isopropyl alcohol (IPA) are provided. In the first and second chemical liquid cleaning processing devices 12a and 12b and the first to fourth water cleaning processing devices 13a to 13d, the cleaning processing liquid overflows, and in the case of water cleaning processing, the overflow cleaning is performed. Drain the treatment liquid, and in the case of chemical treatment,
It is equipped with a processing tank 15 in which the overflowed cleaning processing liquid is circulated to remove accumulated impurities and to be recycled.

【0017】上記ウエハ搬送装置2は、各薬液洗浄処理
装置12a,12bによる影響のないように3基配設さ
れている。これら各ウエハ搬送装置2は、例えば50枚
のウエハWを一括して把持する左右一対のウエハチャッ
ク2aと、このウエハチャック2aを水平方向(X,Y
方向)及び昇降方向(Z方向)に移動させる駆動機構2
dと、処理槽15〜15に沿って配設される搬送路2b
とを有し、搬送路2bに沿って往復移動するように構成
されている。
Three wafer transfer devices 2 are arranged so as not to be affected by the chemical cleaning devices 12a and 12b. Each of these wafer transfer devices 2 holds a pair of left and right wafer chucks 2a that collectively hold, for example, 50 wafers W, and the wafer chucks 2a in the horizontal direction (X, Y).
Drive mechanism 2 for moving in the vertical direction) and in the vertical direction (Z direction)
d, and a transport path 2b arranged along the processing tanks 15 to 15.
And is configured to reciprocate along the transport path 2b.

【0018】次に、上記のように構成される半導体ウエ
ハの洗浄処理装置に使用されるこの発明の洗浄処理装置
について図2ないし図11を参照して詳細に説明する。
Next, the cleaning processing apparatus of the present invention used in the semiconductor wafer cleaning processing apparatus having the above-described structure will be described in detail with reference to FIGS.

【0019】◎第一実施例 図2はこの発明の洗浄処理装置の第一実施例の概略斜視
図、図3はその断面図が示されている。
First Embodiment FIG. 2 is a schematic perspective view of a first embodiment of the cleaning apparatus of the present invention, and FIG. 3 is a sectional view thereof.

【0020】この発明の洗浄処理装置12a,12b,
13a〜13d(以下に12,13で代表する)、例え
ば薬液洗浄処理装置12は、高温に加熱されたアンモニ
ア水等の洗浄処理液を収容する矩形状の処理槽15と、
この処理槽15内に配設されてウエハWを例えば50枚
垂直に保持するウエハ保持具16と、ウエハ保持具16
のやや下方と処理槽15の底部に設けられた洗浄処理液
Lの供給口17との間に配設される整流手段20とを具
備する。
The cleaning processing apparatus 12a, 12b of the present invention,
13a to 13d (hereinafter represented by 12 and 13), for example, the chemical cleaning processing apparatus 12 includes a rectangular processing tank 15 that stores a cleaning processing liquid such as ammonia water heated to a high temperature,
A wafer holder 16 disposed in the processing tank 15 for vertically holding, for example, 50 wafers W, and a wafer holder 16
A rectifying means 20 is provided slightly below and between the supply port 17 for the cleaning treatment liquid L provided at the bottom of the treatment tank 15.

【0021】また、上記処理槽15はウエハWを浸漬す
る洗浄処理液Lを収容する内槽15aと、内槽15aの
上端からオーバーフローする洗浄処理液Lを受止める外
槽15bとで構成されており、内槽15aの底部に設け
られた供給口17と外槽15bの底部に設けられた排出
口15cとに循環管路18が接続されると共に、この循
環管路18に循環ポンプP及びフィルタFが介設され
て、オーバーフローした洗浄処理液Lを清浄化して循環
供給し得るように構成されている。
The processing bath 15 is composed of an inner bath 15a for containing a cleaning treatment liquid L in which the wafer W is immersed, and an outer bath 15b for receiving the cleaning treatment liquid L overflowing from the upper end of the inner bath 15a. The circulation pipe 18 is connected to the supply port 17 provided at the bottom of the inner tank 15a and the discharge port 15c provided at the bottom of the outer tank 15b, and the circulation pump P and the filter are connected to the circulation pipe 18. F is interposed so that the overflowed cleaning treatment liquid L can be cleaned and circulated and supplied.

【0022】上記整流手段20は、処理槽15を上下に
区画すべく水平に配設されると共に多数の洗浄処理液L
の流通用の小孔21を穿設した矩形状の整流板22と、
供給口17の上方に配置される円形状の拡散板24とで
構成されている。この場合、整流板22は、例えば石英
製あるいはフッ素樹脂製板等の耐薬品性板部材にて形成
されており、図4に示すように、長手方向に沿う平行な
4列上に適宜間隔をおいてそれぞれ小孔21が穿設され
ている。具体的には、奇数列同士と偶数列同士の小孔2
1が同一位置に設けられて、全ての小孔21がウエハ保
持具16に保持されるウエハW,W間に位置するように
なっている。このように形成される整流板22の周縁部
には縁部から下方に向って垂下する洗浄処理液の阻流壁
23が設けられており、この阻流壁23によって整流板
22と処理槽15との隙間19に向って流れる洗浄処理
液Lの一部を阻止し、整流板22の小孔21を通る洗浄
処理液Lの流れとの差を小さくして、処理槽15内の洗
浄処理液Lの流れの均一化を図れるように構成されてい
る。
The rectifying means 20 is horizontally arranged so as to divide the processing tank 15 into upper and lower parts, and a large number of cleaning processing liquids L are provided.
A rectangular rectifying plate 22 having a small hole 21 for distribution of
It is composed of a circular diffusion plate 24 arranged above the supply port 17. In this case, the rectifying plate 22 is made of, for example, a chemically resistant plate member such as a plate made of quartz or a fluororesin, and as shown in FIG. A small hole 21 is formed in each of the holes. Specifically, the small holes 2 in the odd rows and in the even rows 2
1 is provided at the same position, and all the small holes 21 are located between the wafers W held by the wafer holder 16. A baffle wall 23 for the cleaning treatment liquid that hangs downward from the edge is provided at the peripheral edge of the baffle plate 22 formed in this manner. A part of the cleaning treatment liquid L flowing toward the gap 19 between the cleaning treatment liquid L and the flow path of the cleaning treatment liquid L passing through the small holes 21 of the straightening plate 22 to reduce the difference. It is configured so that the flow of L can be made uniform.

【0023】また、上記拡散板24も整流板22と同様
に、例えば石英製あるいはフッ素樹脂製板等の耐薬品性
板部材にて形成されており、この拡散板24の上面と整
流板22の下面との間に介在される複数本(例えば4
本)の支持脚27にて整流板22の下方に支持されてい
る(図4参照)。なお、拡散板24は円形板自体であっ
てもよいが、好ましくは、図2に想像線で示すように、
拡散板24に洗浄処理液Lの流通孔を穿設する方がよ
い。その理由は、供給口17から供給される洗浄処理液
Lの全てを拡散板24によって左右に振り分けずにその
一部を拡散板24の上方へ流すことにより槽内への洗浄
処理液の流れを均一化できるからである。
The diffuser plate 24 is also formed of a chemically resistant plate member such as a quartz plate or a fluororesin plate similarly to the straightening plate 22, and the upper surface of the diffuser plate 24 and the straightening plate 22 are formed. Plural pieces (for example, 4
It is supported below the flow straightening plate 22 by support legs 27 (see FIG. 4). The diffuser plate 24 may be a circular plate itself, but preferably, as shown by an imaginary line in FIG.
It is better to form a through hole for the cleaning treatment liquid L in the diffusion plate 24. The reason is that all of the cleaning treatment liquid L supplied from the supply port 17 is not distributed to the left and right by the diffusion plate 24, but a part thereof is flowed above the diffusion plate 24 so that the cleaning treatment liquid flows into the tank. This is because it can be made uniform.

【0024】上記のように構成される洗浄処理装置1
2,13において、ウエハWの洗浄処理を行うには、ま
ず、ウエハ搬送装置2のウエハチャック2aにて保持さ
れたウエハWをウエハ保持具16に受渡して、ウエハW
を処理槽15内に配設する。そして、循環ポンプPを駆
動させて図示しない洗浄処理液供給源から洗浄処理液L
を供給口17から内槽15a内に供給すると、供給口1
7から内槽15aに供給された洗浄処理液Lは拡散板2
4によって左右に拡散された後、整流板22の小孔21
によって整流化されてウエハWの表面に供給される。こ
の際、整流板22と内槽15aとの隙間19を通る洗浄
処理液Lの一部は阻流壁23によって阻止されるので、
隙間19を通る洗浄処理液Lの流速を小孔21を通る洗
浄処理液Lの流速に比して過度に速くするのを抑制する
ことができ、ウエハ表面に供給される洗浄処理液Lに乱
流が生じるのを防止することができる。
Cleaning processing apparatus 1 configured as described above
To perform the cleaning process of the wafer W in 2 and 13, first, the wafer W held by the wafer chuck 2a of the wafer transfer device 2 is delivered to the wafer holder 16, and the wafer W is held.
Are disposed in the processing tank 15. Then, the circulation pump P is driven to drive the cleaning treatment liquid L from the cleaning treatment liquid supply source (not shown).
Is supplied from the supply port 17 into the inner tank 15a, the supply port 1
The cleaning treatment liquid L supplied from 7 to the inner tank 15a is the diffusion plate 2
After being diffused to the left and right by 4, the small holes 21 of the straightening plate 22
Is rectified and supplied to the surface of the wafer W. At this time, a part of the cleaning treatment liquid L passing through the gap 19 between the rectifying plate 22 and the inner tank 15a is blocked by the baffle wall 23.
It is possible to suppress the flow velocity of the cleaning treatment liquid L passing through the gap 19 from being excessively higher than the flow velocity of the cleaning treatment liquid L passing through the small holes 21, and to disturb the cleaning treatment liquid L supplied to the wafer surface. Flow can be prevented from occurring.

【0025】◎第二実施例 図5はこの発明の洗浄処理装置の第二実施例の概略斜視
図、図6はその断面図が示されている。
[Second Embodiment] FIG. 5 is a schematic perspective view of a second embodiment of the cleaning apparatus of the present invention, and FIG. 6 is a sectional view thereof.

【0026】第二実施例における洗浄処理装置は、洗浄
処理液の供給側の流れを制御してウエハ表面へ供給され
る洗浄処理液の均一化を図れるようにした場合である。
すなわち、整流手段20を構成する拡散板24の周縁か
ら下方に向って垂下する洗浄処理液Lの阻流壁26を垂
下すると共に、拡散板24に洗浄処理液Lの流通孔25
を穿設した場合である。この場合、拡散板24に穿設さ
れる流通孔25は、図7に示すように、整流板22に穿
設された小孔21と平行な位置に穿設される小孔25a
にて形成してもよく、あるいは、図8に示すように整流
板22に穿設された小孔21と平行な長孔25bにて形
成してもよい。なお、流通孔25を小孔25aにて形成
する場合には、小孔25aの位置を整流板22の小孔2
1の位置に合せることによって拡散板24の下方の洗浄
処理液Lを積極的にウエハW表面に供給することがで
き、また、拡散板24の小孔25aの位置と整流板22
の小孔21の位置をずらすことによって拡散板24の下
方の洗浄処理液LのウエハW表面への供給量を少なくす
ることができる。
The cleaning processing apparatus in the second embodiment is a case in which the flow of the cleaning processing liquid on the supply side is controlled so that the cleaning processing liquid supplied to the wafer surface can be made uniform.
That is, the flow blocking wall 26 of the cleaning treatment liquid L that hangs downward from the peripheral edge of the diffusion plate 24 that constitutes the rectifying means 20 is hung down, and the diffusion plate 24 has the through holes 25 for the cleaning treatment liquid L.
This is the case when In this case, as shown in FIG. 7, the through holes 25 formed in the diffusion plate 24 are small holes 25a formed in a position parallel to the small holes 21 formed in the flow straightening plate 22.
Alternatively, as shown in FIG. 8, it may be formed by a long hole 25b parallel to the small hole 21 formed in the current plate 22. When the through hole 25 is formed by the small hole 25a, the position of the small hole 25a is set to the small hole 2 of the straightening plate 22.
The cleaning treatment liquid L below the diffusion plate 24 can be positively supplied to the surface of the wafer W by adjusting the position of the diffusion plate 24 to the position of 1, and the position of the small hole 25a of the diffusion plate 24 and the rectifying plate 22.
By displacing the position of the small holes 21, the supply amount of the cleaning processing liquid L below the diffusion plate 24 to the surface of the wafer W can be reduced.

【0027】上記のように、拡散板24の周縁に阻流壁
26を設けることにより、供給口17から内槽15a内
に供給される洗浄処理液Lの一部を拡散板24の下方に
取り込むことができ、取り込んだ洗浄処理液Lを流通孔
25から上方へ流すことができる。したがって、拡散板
24の上方のウエハW間の洗浄処理液Lの流れと他のウ
エハW間の流れとを均一化することができ、洗浄処理能
率の向上を図ることができる。
As described above, by providing the baffle wall 26 on the periphery of the diffusion plate 24, a part of the cleaning treatment liquid L supplied from the supply port 17 into the inner tank 15a is taken in below the diffusion plate 24. Therefore, the cleaning treatment liquid L that has been taken in can be caused to flow upward from the flow hole 25. Therefore, the flow of the cleaning processing liquid L between the wafers W above the diffusion plate 24 and the flow between the other wafers W can be made uniform, and the cleaning processing efficiency can be improved.

【0028】なお、第二実施例において、整流板22の
縁部に阻流壁23を設けない以外は上記第一実施例と同
じであるので、同一部分には、同一符号を付してその説
明は省略する。
The second embodiment is the same as the first embodiment except that the baffle wall 23 is not provided at the edge of the flow straightening plate 22, so the same parts are designated by the same reference numerals. The description is omitted.

【0029】◎第三実施例 図9はこの発明の洗浄処理装置の第三実施例の概略斜視
図、図10はその断面図が示されている。
Third Embodiment FIG. 9 is a schematic perspective view of a third embodiment of the cleaning apparatus of the present invention, and FIG. 10 is a sectional view thereof.

【0030】第三実施例における洗浄処理装置は、洗浄
処理液の供給を更に確実に均一化できるようにした場合
である。すなわち、上記第一実施例及び第二実施例に示
したように、整流板22の縁部から下方に向って垂下す
る洗浄処理液の阻流壁23を形成し、拡散板24には、
周縁から下方に向って垂下する洗浄処理液の阻流壁26
を形成すると共に、拡散板24に洗浄処理液Lの流通孔
25を穿設した場合である。このように構成することに
よって、供給口17から内槽15a内に導入される洗浄
処理液Lの一部が阻流壁26によって拡散板24の下方
に取り込まれて拡散板24の流通孔25から上方へ流れ
る。一方、処理槽15と整流板22の隙間19に向って
流れる洗浄処理液Lの一部が阻流壁23によって阻止さ
れて、隙間19を通る洗浄処理液Lの流れが遅くなり、
整流板22の小孔21を流れる洗浄処理液Lの流れとの
差を少なくすることができる。したがって、洗浄処理液
Lの処理槽15内への流れの均一化を更に確実にするこ
とができる。
The cleaning apparatus in the third embodiment is one in which the supply of the cleaning solution can be more surely made uniform. That is, as shown in the first and second embodiments, the blocking wall 23 for the cleaning treatment liquid that hangs downward from the edge of the straightening plate 22 is formed, and the diffusion plate 24 is
Barrier wall 26 for the cleaning treatment liquid hanging downward from the peripheral edge
Is formed, and the diffusion plate 24 is provided with a through hole 25 for the cleaning treatment liquid L. With this configuration, a part of the cleaning treatment liquid L introduced from the supply port 17 into the inner tank 15a is taken in below the diffusion plate 24 by the baffle wall 26 and is passed through the circulation hole 25 of the diffusion plate 24. It flows upwards. On the other hand, a part of the cleaning treatment liquid L flowing toward the gap 19 between the treatment tank 15 and the rectifying plate 22 is blocked by the baffle wall 23, and the flow of the cleaning treatment liquid L through the gap 19 is delayed,
The difference from the flow of the cleaning treatment liquid L flowing through the small holes 21 of the straightening vane 22 can be reduced. Therefore, the uniformization of the flow of the cleaning treatment liquid L into the treatment tank 15 can be further ensured.

【0031】なお、第三実施例において、その他の部分
は上記第一実施例及び第二実施例と同じであるので、同
一部分には同一符号を付してその説明は省略する。
Since the other parts of the third embodiment are the same as those of the first and second embodiments, the same parts are designated by the same reference numerals and the description thereof will be omitted.

【0032】◎第四実施例 図11はこの発明の洗浄処理装置の第四実施例の概略斜
視図が示されている。
Fourth Embodiment FIG. 11 is a schematic perspective view of the fourth embodiment of the cleaning processing apparatus of the present invention.

【0033】この第四実施例における洗浄処理装置は、
洗浄処理液Lの供給の均一化の他に、処理槽15の容量
を小さくすると共に、洗浄処理液の使用量の抑制を図れ
るようにした場合である。すなわち、上記第一実施例な
いし第三実施例と同様に構成される整流手段20を配設
する処理槽15(内槽15a)の底部の両側に上向き傾
斜する底部傾斜部15dを設け、整流手段20を構成す
る整流板22を処理槽15の底部の中心部に対応して水
平な水平整流部22aと、この水平整流部22aの両側
に設けられて底部傾斜部15dに対応して上向きに傾斜
される傾斜整流部22bとを有するように構成した場合
である。したがって、処理槽15及び整流板22を傾斜
させた分だけ処理槽15の全体の容積を小さくすること
ができ、ウエハWを洗浄処理するための薬液の使用量あ
るいは洗浄用の純水の使用量を大幅に抑制することがで
きる。
The cleaning apparatus in the fourth embodiment is
This is a case where, in addition to making the supply of the cleaning treatment liquid L uniform, the capacity of the treatment tank 15 is reduced and the amount of the cleaning treatment liquid used can be suppressed. That is, the bottom inclined portions 15d inclined upward are provided on both sides of the bottom of the processing bath 15 (inner bath 15a) in which the flow regulating means 20 having the same structure as in the first to third embodiments is arranged. A straightening plate 22 which constitutes 20 is a horizontal straightening portion 22a corresponding to the center of the bottom of the processing tank 15, and an upward slanting portion provided on both sides of the horizontal straightening portion 22a corresponding to the bottom slanting portion 15d. It is a case where it is configured to have the inclined rectifying section 22b. Therefore, the entire volume of the processing tank 15 can be reduced by the amount of inclination of the processing tank 15 and the current plate 22, and the amount of the chemical liquid used for cleaning the wafer W or the amount of the pure water used for cleaning is used. Can be significantly suppressed.

【0034】なお、図11では整流板22の長手方向の
端部すなわち短辺側の縁部に阻流壁23を垂下した場合
を示したが、これは洗浄処理装置を水洗洗浄処理装置1
3に適用する場合を示すもので、水洗洗浄処理装置13
において、整流板22の長辺側の縁部すなわち傾斜整流
部22bの側縁部に阻流壁23を垂下すると、槽内の洗
浄処理液交換後、再度洗浄処理液を供給する際、気泡が
この側縁部に残り、この気泡によってウエハW表面の洗
浄処理に悪影響が生じるので、これを防止するためであ
る。
Although FIG. 11 shows the case where the baffle wall 23 is hung at the longitudinal end of the rectifying plate 22, that is, the edge on the short side, this shows that the cleaning treatment apparatus is the washing treatment apparatus 1 with water.
3 shows a case where it is applied to 3
In the above, if the baffle wall 23 is hung on the long side edge of the straightening vane 22, that is, the side edge of the inclined straightening portion 22b, bubbles are generated when the cleaning treatment liquid is supplied again after the cleaning treatment liquid in the tank is replaced. This is to prevent the cleaning process on the surface of the wafer W from being adversely affected by the bubbles remaining on the side edge portion.

【0035】第四実施例において、その他の部分は上記
第一実施例ないし第三実施例と同じであるので、同一部
分には同一符号を付してその説明は省略する。
Since the other parts of the fourth embodiment are the same as those of the first to third embodiments, the same parts are designated by the same reference numerals and the description thereof will be omitted.

【0036】なお、上記処理槽15の上方には、ウエハ
保持具16とウエハチャック2aとの間でウエハWを授
受する際に、ウエハWの保持が確実か否かの検出を行う
ウエハ確認検出装置30が設けられている。このウエハ
確認検出装置30は、例えば処理槽15の対向する辺の
一方に配設される発光素子にて形成される発光部31
と、対向する辺側に配設される受光素子にて形成される
受光部32とで構成されている。このように構成される
ウエハ確認検出装置30によれば、ウエハWの授受の際
にウエハチャック2aの保持溝2cあるいはウエハ保持
具16の保持溝16aに確実にウエハWが保持されない
場合には、ウエハWが浮き上がるか、過度に傾斜するの
で、ウエハWの脱落やウエハ間の接触等を防止すること
ができる。
Above the processing bath 15, a wafer confirmation detection for detecting whether or not the wafer W is securely held when the wafer W is transferred between the wafer holder 16 and the wafer chuck 2a. A device 30 is provided. The wafer confirmation / detection apparatus 30 includes, for example, a light emitting section 31 formed of a light emitting element arranged on one of opposite sides of the processing tank 15.
And a light receiving portion 32 formed of a light receiving element arranged on the opposite side. According to the wafer confirmation / detection apparatus 30 configured as described above, when the wafer W is not reliably held in the holding groove 2c of the wafer chuck 2a or the holding groove 16a of the wafer holder 16 when transferring the wafer W, Since the wafer W floats or is tilted excessively, it is possible to prevent the wafer W from coming off, contact between the wafers, and the like.

【0037】また、処理槽15の上方開口部には開閉式
の蓋33が装着されており、この蓋33を閉鎖すること
によって処理槽15の上方を搬送されるウエハWやウエ
ハチャック2aから滴下する洗浄処理液やごみ等が処理
槽15内に落下するのを防止するように構成されてい
る。この蓋33は、図12及び図13に示すように、処
理槽15の短辺側壁15eの両側に枢着される2本の回
転軸34にそれぞれ突設される開閉アーム35に固定さ
れる一対の例えばポリテトラフルオロエチレン(PTF
E)製の蓋体36と、蓋体36の外側に位置する外槽1
5bの上方を覆う傾斜固定蓋33aとで構成されてい
る。このように構成される蓋33は、図示しない駆動モ
ータの駆動によって各回転軸34が時間的遅れをもって
回転することによって開閉され、閉鎖時には両蓋体36
の突き合わせ部が上方に突出するように山形に傾斜され
て、蓋上に滴下した液滴を処理槽15の外側へ流すこと
ができるようになっている。したがって、蓋33の上に
滴下した液が結晶化してパーティクルが発生するのを防
止することができる。また、開放時には蓋体36が垂直
に位置して処理槽15を収納するメインフレーム40の
内側に蓋体36が位置するように構成されているので、
開蓋状態において、蓋33がウエハWの搬送の邪魔にな
ることはない。なお、一方の蓋体36の自由端部には他
方の蓋体36の自由端部上方を覆う塞ぎ部材37が取付
けられて、閉鎖時に両蓋体36,36間の隙間を閉塞し
得るようになっている。また、蓋体36の中間部には開
口窓38が設けられており、この開口窓38に例えば石
英製の透明板39が嵌装されており、蓋33の閉鎖時に
外部から処理槽15の内部が目視できるように構成され
ている。なお、透明板39の上面に液滴が溜まるので、
開口窓38の下側の枠部に排液口(図示せず)を設けて
おけば、透明板39上に溜まった液を排液口から外部に
排出することができるので好ましい。
An openable lid 33 is attached to the upper opening of the processing bath 15, and the lid 33 is closed to drop the wafer W carried over the processing bath 15 from the wafer W or the wafer chuck 2a. The cleaning treatment liquid, dust and the like are prevented from falling into the treatment tank 15. As shown in FIGS. 12 and 13, the lid 33 is a pair of fixed to open / close arms 35 projecting from two rotary shafts 34 pivotally mounted on both sides of the short side wall 15e of the processing tank 15. For example, polytetrafluoroethylene (PTF
E) made of a lid 36, and the outer tank 1 located outside the lid 36
5b and an inclined fixed lid 33a that covers the upper side. The lid 33 configured as described above is opened and closed by the rotation of each rotary shaft 34 with a time delay by the drive of a drive motor (not shown), and both lids 36 are closed when closed.
The butted portion is inclined in a mountain shape so as to project upward so that the liquid droplets dropped on the lid can flow to the outside of the processing tank 15. Therefore, it is possible to prevent the liquid dropped on the lid 33 from crystallizing and generating particles. In addition, since the lid 36 is positioned vertically when opened, the lid 36 is positioned inside the main frame 40 that houses the processing tank 15,
In the opened state, the lid 33 does not interfere with the transfer of the wafer W. A closing member 37 is attached to the free end portion of one lid body 36 to cover the free end portion of the other lid body 36 so that the gap between the lid bodies 36 and 36 can be closed when closed. Has become. Further, an opening window 38 is provided in an intermediate portion of the lid 36, and a transparent plate 39 made of, for example, quartz is fitted in the opening window 38, and when the lid 33 is closed, the inside of the processing tank 15 is externally supplied. Is configured to be visible. In addition, since liquid droplets are accumulated on the upper surface of the transparent plate 39,
It is preferable to provide a drainage port (not shown) in the lower frame portion of the opening window 38 because the liquid accumulated on the transparent plate 39 can be discharged to the outside from the drainage port.

【0038】また、上記処理槽15の下部には、図12
に示すように、処理槽15をメインフレーム40の載置
台41上に安定に載置するためのレベル調整機構42が
取付られている。このレベル調整機構42は、処理槽1
5の底部下面に固定される取付脚43の下端に取付けら
れる下面をすり面加工したハット形の載置板44と、平
面度を有するように面仕上げされたアジャストプレート
45と、アジャストプレート45上に固定される位置決
めブロック46と、アジャストプレート45をメインフ
レーム40の載置台41上に固定する固定ボルト47及
びアジャストプレート45をメインフレーム40の載置
台41上に高さ調整可能に載置するアジャストボルト4
8とで構成されている。
In addition, in the lower part of the processing tank 15 shown in FIG.
As shown in, a level adjusting mechanism 42 for stably mounting the processing tank 15 on the mounting table 41 of the main frame 40 is attached. This level adjusting mechanism 42 is used in the processing tank 1.
The bottom surface of the mounting leg 43 fixed to the bottom surface of the base plate 5 of FIG. 5 has a hat-shaped mounting plate 44 whose lower surface is surface-finished, an adjust plate 45 having a flat surface, and an adjust plate 45. A positioning block 46 fixed to the main frame 40, a fixing bolt 47 for fixing the adjusting plate 45 on the mounting table 41 of the main frame 40, and an adjusting plate 45 for mounting the adjusting plate 45 on the mounting table 41 of the main frame 40 in a height-adjustable manner. Bolt 4
8 and.

【0039】上記のように構成されるレベル調整機構4
2を用いて処理槽15を載置するには、まず、アジャス
トボルト48をもってアジャストプレート45の水平調
整を行う。この際、アジャストプレート45に設けられ
た貫通孔45aが固定ボルト47を遊嵌すべく固定ボル
ト47の径より大径に形成され、スペーサ49を介して
固定ボルト47を載置台41に固定するようにしてある
ので、アジャストプレート41の水平調整を容易に行う
ことができる。次に、処理槽15の取付脚43に取付け
られた載置板44を位置決めブロック46に当接した後
に固定する。この場合、処理槽15の水平方向の微調整
はアジャストプレート41を動かして行い、実際には、
処理槽15内に純水を入れ、四周からオーバーフローす
るようにアジャストプレート41の水平の微調整を行
う。
The level adjusting mechanism 4 configured as described above
In order to mount the processing tank 15 using the No. 2, the adjustment plate 45 is first leveled with the adjustment bolt 48. At this time, the through hole 45a provided in the adjusting plate 45 is formed with a diameter larger than the diameter of the fixing bolt 47 so that the fixing bolt 47 can be loosely fitted, and the fixing bolt 47 is fixed to the mounting table 41 via the spacer 49. Therefore, the adjustment plate 41 can be easily adjusted horizontally. Next, the mounting plate 44 mounted on the mounting legs 43 of the processing tank 15 is brought into contact with the positioning block 46 and then fixed. In this case, the fine adjustment in the horizontal direction of the processing tank 15 is performed by moving the adjustment plate 41.
Pure water is put in the processing tank 15, and the adjustment plate 41 is horizontally finely adjusted so as to overflow from four circumferences.

【0040】次に、上記のように構成された洗浄処理装
置12,13を組込んだ半導体ウエハの洗浄処理装置の
動作について説明する。まず、25枚単位でキャリアC
に収納されたウエハWを搬入部1へ供給すると、キャリ
ア搬送アーム7が駆動して供給されたキャリアCを2個
単位でローダ部5へ移送する。そして、その後に供給さ
れたキャリアCについてキャリア搬送アーム7によって
待機部6へ移載し、待機部6でその後のキャリアCのウ
エハWを一時的に保管する。
Next, the operation of the semiconductor wafer cleaning processing apparatus incorporating the cleaning processing apparatuses 12 and 13 configured as described above will be described. First, carrier C in units of 25
When the wafers W stored in 1 are supplied to the loading section 1, the carrier transfer arm 7 is driven to transfer the supplied carriers C to the loader section 5 in units of two. Then, the carrier C supplied thereafter is transferred to the standby unit 6 by the carrier transfer arm 7, and the wafer W of the subsequent carrier C is temporarily stored in the standby unit 6.

【0041】上記ローダ部5に2個のキャリアCが供給
されると、ローダ部5が駆動して2個のキャリアC内の
ウエハWのオリエンテーションフラットを一方向に揃え
て50枚のウエハWを位置決めする一方、ウエハ搬送装
置2が駆動してウエハチャック2aをチャック洗浄・乾
燥処理槽11内に移動させてウエハWを受け取る態勢に
入る。その後、ローダ部5が駆動して2個のキャリアC
からウエハWを一括して持ち上げながら各キャリアCの
ウエハWを近付けると、ウエハ搬送装置2が駆動してウ
エハチャック2aで50枚のウエハWを把持する。ウエ
ハWを把持したウエハチャック2aは、ウエハ搬送装置
2の駆動によって搬送路2bに沿って第1の薬液洗浄処
理装置12aへ移動した後、その位置でウエハチャック
2aを下降させて第1の薬液洗浄処理装置12aの処理
槽15内のウエハ保持具16へ50枚のウエハWを引き
渡して洗浄処理液Lに浸漬する。
When the two carriers C are supplied to the loader unit 5, the loader unit 5 is driven to align the orientation flats of the wafers W in the two carriers C in one direction to obtain 50 wafers W. While positioning, the wafer transfer device 2 is driven to move the wafer chuck 2a into the chuck cleaning / drying processing tank 11 to be ready to receive the wafer W. Then, the loader unit 5 is driven to drive the two carriers C.
When the wafers W of each carrier C are brought close to each other while lifting the wafers W from above, the wafer transfer device 2 is driven to hold 50 wafers W by the wafer chuck 2a. The wafer chuck 2a holding the wafer W moves to the first chemical liquid cleaning processing device 12a along the transport path 2b by the drive of the wafer transport device 2 and then lowers the wafer chuck 2a at that position to move the first chemical liquid. Fifty wafers W are delivered to the wafer holder 16 in the processing tank 15 of the cleaning processing apparatus 12a and immersed in the cleaning processing liquid L.

【0042】この第1の薬液洗浄処理装置12aにおい
て、上述したように、供給口17から処理槽15内に供
給される洗浄処理液Lは整流手段20の整流板22及び
拡散板24によって整流化されると共に、均一化されて
ウエハW表面に供給されてウエハWの表面の洗浄処理に
供される。
In the first chemical cleaning apparatus 12a, as described above, the cleaning processing liquid L supplied from the supply port 17 into the processing tank 15 is rectified by the rectifying plate 22 and the diffusion plate 24 of the rectifying means 20. At the same time, it is homogenized and supplied to the surface of the wafer W to be used for cleaning the surface of the wafer W.

【0043】第1の薬液洗浄処理装置12aでのウエハ
Wの洗浄処理が終了すると、上述の場合と逆の動作によ
ってウエハ搬送装置2のウエハチャック2aがウエハ保
持具16からウエハWを一括して受け取り、次の第1の
水洗洗浄処理装置13aのウエハ保持具16へ移載して
上述と同様の動作によって水洗処理を行い、更に次の第
2の水洗洗浄処理装置13bで同様の水洗処理を行って
洗浄処理を完了する。その後、必要に応じて薬液処理及
び水洗処理が繰り返し行われて、洗浄処理後のウエハW
は搬出部4を介して次工程へキャリア単位で排出され
る。
When the cleaning process of the wafer W in the first chemical cleaning device 12a is completed, the wafer chuck 2a of the wafer transfer device 2 collectively collects the wafer W from the wafer holder 16 by the operation reverse to the above case. After receiving, the wafer is transferred to the wafer holder 16 of the next first water washing / cleaning processing apparatus 13a, the water washing processing is performed by the same operation as described above, and the same water washing processing is performed by the next second water washing / cleaning processing apparatus 13b. To complete the cleaning process. Thereafter, the chemical solution treatment and the water washing treatment are repeatedly performed as necessary, and the wafer W after the washing treatment is performed.
Is discharged to the next process in carrier units via the carry-out section 4.

【0044】上記のような洗浄処理工程を行う半導体ウ
エハの洗浄処理装置の最終水洗洗浄処理において、この
発明の洗浄処理装置を使用したものと、従来の整流手段
を用いた洗浄処理装置を使用したものとを比較したとこ
ろ、純水によるファイナルリンス完了を示す所定の比抵
抗値(例えば15MΩ)に達するまでの時間を大幅に短
縮することができ、洗浄処理能率の向上と洗浄処理液の
使用量の低減化を図ることができた。
In the final rinsing / cleaning process of the semiconductor wafer cleaning / processing device that performs the cleaning process as described above, the cleaning processing device of the present invention and the conventional cleaning processing device using the rectifying means were used. As a result, it was possible to significantly reduce the time required to reach a predetermined specific resistance value (for example, 15 MΩ) indicating the completion of final rinse with pure water, to improve the cleaning treatment efficiency and the amount of the cleaning treatment liquid used. Could be reduced.

【0045】上記実施例では、この発明の洗浄処理装置
を半導体ウエハの洗浄処理装置に適用する場合について
説明したが、その他の例えばLCDガラス基板等の洗浄
処理装置やエッチング装置等にも適用できることは勿論
である。
In the above embodiments, the case where the cleaning processing apparatus of the present invention is applied to a cleaning processing apparatus for semiconductor wafers has been described. However, it can be applied to other cleaning processing apparatuses such as LCD glass substrates and etching apparatuses. Of course.

【0046】[0046]

【発明の効果】以上に説明したように、この発明の洗浄
処理装置は、上記のように構成されているので、以下の
ような効果が得られる。
As described above, since the cleaning apparatus of the present invention is constructed as described above, the following effects can be obtained.

【0047】1)請求項1に記載の洗浄処理装置によれ
ば、整流手段を構成する整流板の縁部から下方に向って
垂下する洗浄処理液の阻流壁を形成するので、処理槽内
を上昇する洗浄処理液に乱流が起きるのを防止して、洗
浄処理効率の向上を図ることができる。
1) According to the cleaning processing apparatus of the first aspect, since the diversion wall of the cleaning processing liquid that hangs downward from the edge of the flow straightening plate that constitutes the flow straightening means is formed, the inside of the processing tank is formed. It is possible to prevent turbulence from occurring in the cleaning treatment liquid that rises and improve the cleaning treatment efficiency.

【0048】2)請求項2に記載の洗浄処理装置によれ
ば、整流手段を構成する拡散板の周縁から下方に向って
垂下する洗浄処理液の阻流壁を形成すると共に、拡散板
に洗浄処理液の流通孔を穿設するので、拡散板の上方の
被処理体間の洗浄処理液の流れと他の被処理体間の流れ
とを均一化することができ、洗浄処理能率の向上を図る
ことができる。
2) According to the cleaning processing apparatus of the second aspect, a blocking wall for the cleaning processing liquid that hangs downward from the peripheral edge of the diffusion plate forming the rectifying means is formed, and the diffusion plate is cleaned. Since the through hole for the processing liquid is formed, the flow of the cleaning processing liquid between the objects to be processed above the diffusion plate and the flow between the other objects to be processed can be made uniform, and the cleaning efficiency can be improved. Can be planned.

【0049】3)請求項3記載の洗浄処理装置によれ
ば、整流板の縁部から下方に向って垂下する洗浄処理液
の阻流壁を形成し、拡散板の周縁から下方に向って垂下
する洗浄処理液の阻流壁を形成すると共に、拡散板に洗
浄処理液の流通孔を穿設するので、洗浄処理液の乱流を
防止することができると共に、洗浄処理液の処理槽内へ
の流れの均一化を更に確実にすることができる。
3) According to the cleaning processing apparatus of the third aspect, the flow-stopping wall for the cleaning processing liquid that hangs downward from the edge of the flow straightening plate is formed, and hangs downward from the peripheral edge of the diffusion plate. Since the flow-through hole for the cleaning treatment liquid is formed in the diffusion plate, the turbulent flow of the cleaning treatment liquid can be prevented and the cleaning treatment liquid can be introduced into the treatment tank. It is possible to further ensure the homogenization of the flow.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の洗浄処理装置を適用する半導体ウエ
ハの洗浄処理装置を示す斜視図である。
FIG. 1 is a perspective view showing a semiconductor wafer cleaning processing apparatus to which the cleaning processing apparatus of the present invention is applied.

【図2】この発明の洗浄処理装置の第一実施例を示す概
略斜視図である。
FIG. 2 is a schematic perspective view showing a first embodiment of the cleaning processing apparatus of the present invention.

【図3】この発明の第一実施例の断面図である。FIG. 3 is a sectional view of the first embodiment of the present invention.

【図4】第一実施例における整流板と拡散板の取付態様
を示す斜視図である。
FIG. 4 is a perspective view showing an attachment mode of a current plate and a diffusion plate in the first embodiment.

【図5】この発明の第二実施例を示す概略斜視図であ
る。
FIG. 5 is a schematic perspective view showing a second embodiment of the present invention.

【図6】この発明の第二実施例の断面図である。FIG. 6 is a sectional view of a second embodiment of the present invention.

【図7】第二実施例における拡散板を示す斜視図であ
る。
FIG. 7 is a perspective view showing a diffusion plate according to a second embodiment.

【図8】第二実施例における別の拡散板を示す斜視図で
ある。
FIG. 8 is a perspective view showing another diffusion plate in the second embodiment.

【図9】この発明の第三実施例を示す概略斜視図であ
る。
FIG. 9 is a schematic perspective view showing a third embodiment of the present invention.

【図10】この発明の第三実施例の断面図である。FIG. 10 is a sectional view of a third embodiment of the present invention.

【図11】この発明の第四実施例を示す概略斜視図であ
る。
FIG. 11 is a schematic perspective view showing a fourth embodiment of the present invention.

【図12】この発明における処理槽に取付けられる蓋と
取付脚を示す斜視図である。
FIG. 12 is a perspective view showing a lid and attachment legs attached to the processing tank in the present invention.

【図13】この発明における蓋の開閉状態を示す側面図
である。
FIG. 13 is a side view showing the opened / closed state of the lid in the present invention.

【図14】従来の洗浄処理装置を示す断面図である。FIG. 14 is a cross-sectional view showing a conventional cleaning processing apparatus.

【符号の説明】[Explanation of symbols]

15 処理槽 17 供給口 19 隙間 20 整流手段 21 小孔 22 整流板 23 阻流壁 24 拡散板 25 流通孔 26 阻流壁 W 半導体ウエハ(被処理体) L 洗浄処理液 15 treatment tank 17 supply port 19 gap 20 straightening means 21 small hole 22 straightening plate 23 baffle wall 24 diffusion plate 25 flow hole 26 baffle wall W semiconductor wafer (object to be treated) L cleaning treatment liquid

───────────────────────────────────────────────────── フロントページの続き (72)発明者 長野 泰博 佐賀県鳥栖市西新町1375番地41 東京エレ クトロン佐賀株式会社佐賀事業所内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Yasuhiro Nagano 1375 Nishishinmachi, Tosu City, Saga Prefecture 41 41 Tokyo Electron Saga Co., Ltd.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 下方部に洗浄処理液の供給口を有する処
理槽と、この処理槽内に収容される洗浄処理液中に浸漬
される被処理体と上記供給口との間に配置される整流手
段とを具備する洗浄処理装置において、 上記整流手段を、上記処理槽を上下に区画すべく水平に
配置されると共に多数の小孔を穿設した整流板と、上記
供給口の上方に位置する拡散板とで構成し、 上記整流板の縁部から下方に向って垂下する洗浄処理液
の阻流壁を形成してなることを特徴とする洗浄処理装
置。
1. A treatment tank having a supply port for a cleaning treatment liquid at a lower portion thereof, and an object to be treated immersed in the cleaning treatment liquid contained in the treatment bath and the supply port. In a cleaning apparatus including a rectifying means, the rectifying means is arranged horizontally to divide the processing tank into upper and lower parts, and a rectifying plate having a large number of small holes is formed above the supply port. And a diffusing plate that forms a blocking wall for the cleaning treatment liquid that hangs downward from the edge of the rectifying plate.
【請求項2】 下方部に洗浄処理液の供給口を有する処
理槽と、この処理槽内に収容される洗浄処理液中に浸漬
される被処理体と上記供給口との間に配置される整流手
段とを具備する洗浄処理装置において、 上記整流手段を、上記処理槽を上下に区画すべく水平に
配置されると共に多数の小孔を穿設した整流板と、上記
供給口の上方に位置する拡散板とで構成し、 上記拡散板の周縁から下方に向って垂下する洗浄処理液
の阻流壁を形成すると共に、拡散板に洗浄処理液の流通
孔を穿設してなることを特徴とする洗浄処理装置。
2. A treatment tank having a cleaning treatment liquid supply port at its lower portion, and an object to be treated immersed in the cleaning treatment liquid contained in the treatment tank and the supply port. In a cleaning apparatus including a rectifying means, the rectifying means is arranged horizontally to divide the processing tank into upper and lower parts, and a rectifying plate having a large number of small holes is formed above the supply port. And a diffusion plate which forms a blocking wall for the cleaning treatment liquid that hangs downward from the periphery of the diffusion plate, and a diffusion hole for the cleaning treatment liquid is formed in the diffusion plate. Cleaning processing equipment.
【請求項3】 下方部に洗浄処理液の供給口を有する処
理槽と、この処理槽内に収容される洗浄処理液中に浸漬
される被処理体と上記供給口との間に配置される整流手
段とを具備する洗浄処理装置において、 上記整流手段を、上記処理槽を上下に区画すべく水平に
配置されると共に多数の小孔を穿設した整流板と、上記
供給口の上方に位置する拡散板とで構成し、 上記整流板の縁部から下方に向って垂下する洗浄処理液
の阻流壁を形成し、 上記拡散板の周縁から下方に向って垂下する洗浄処理液
の阻流壁を形成すると共に、拡散板に洗浄処理液の流通
孔を穿設してなることを特徴とする洗浄処理装置。
3. A treatment tank having a cleaning treatment liquid supply port at a lower portion thereof, and a treatment object immersed in the cleaning treatment liquid contained in the treatment tank and the supply port. In a cleaning apparatus including a rectifying means, the rectifying means is arranged horizontally to divide the processing tank into upper and lower parts, and a rectifying plate having a large number of small holes is formed above the supply port. And a diffusion plate that forms a blocking wall for the cleaning solution that hangs downward from the edge of the rectifying plate, and prevents the cleaning solution that hangs downward from the periphery of the diffusion plate. A cleaning processing apparatus, characterized in that a wall is formed and a diffusion hole for a cleaning processing liquid is formed in a diffusion plate.
JP5147022A 1992-12-26 1993-05-26 Cleaning equipment Expired - Fee Related JP3003017B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5147022A JP3003017B2 (en) 1993-05-26 1993-05-26 Cleaning equipment
US08/172,419 US5503171A (en) 1992-12-26 1993-12-22 Substrates-washing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5147022A JP3003017B2 (en) 1993-05-26 1993-05-26 Cleaning equipment

Publications (2)

Publication Number Publication Date
JPH06333907A true JPH06333907A (en) 1994-12-02
JP3003017B2 JP3003017B2 (en) 2000-01-24

Family

ID=15420781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5147022A Expired - Fee Related JP3003017B2 (en) 1992-12-26 1993-05-26 Cleaning equipment

Country Status (1)

Country Link
JP (1) JP3003017B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766169A (en) * 1993-08-23 1995-03-10 Nec Kansai Ltd Wet treatment equipment
SG80557A1 (en) * 1995-10-13 2001-05-22 Tokyo Electron Ltd A substrate cleaning method and a substrate cleaning apparatus
WO2019245129A1 (en) * 2018-06-18 2019-12-26 에스케이실트론 주식회사 Wafer cleaning device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766169A (en) * 1993-08-23 1995-03-10 Nec Kansai Ltd Wet treatment equipment
SG80557A1 (en) * 1995-10-13 2001-05-22 Tokyo Electron Ltd A substrate cleaning method and a substrate cleaning apparatus
WO2019245129A1 (en) * 2018-06-18 2019-12-26 에스케이실트론 주식회사 Wafer cleaning device
KR20190142619A (en) * 2018-06-18 2019-12-27 에스케이실트론 주식회사 Wafer washing apparatus

Also Published As

Publication number Publication date
JP3003017B2 (en) 2000-01-24

Similar Documents

Publication Publication Date Title
JP2001160546A (en) Substrate treatment apparatus
JPH06333907A (en) Cleaning and processing device
JP2000299298A (en) Processing apparatus and method
JP3200291B2 (en) Cleaning equipment
JP3937508B2 (en) Semiconductor substrate cleaning equipment
JP3118443B2 (en) Wafer cleaning equipment
JP2970894B2 (en) Cleaning equipment
JP2009141022A (en) Substrate processing apparatus
JPH07176506A (en) Washing device and method of washing
JPH10177988A (en) Method and device for treating semiconductor wafer
JP3253219B2 (en) Cleaning equipment in semiconductor processing system
JPH09162156A (en) Treating method and treating system
JP2840799B2 (en) Single wafer cleaning method and apparatus
JP3172023B2 (en) Cleaning equipment
KR20210042628A (en) Apparatus and method for treating substrate
JP2000100761A (en) Semiconductor device manufacturing method and apparatus
JPH0878381A (en) Washing device
JPH09148289A (en) Cleaning device
JPH07161677A (en) Cleaning/etching device and method
JP2006086409A (en) Method and device for washing semiconductor substrate
JPH10172947A (en) Single tank-type cleaning method and device therefor
US20230307265A1 (en) Substrate processing apparatus and substrate processing method
JPH08316183A (en) Washing method and apparatus
JP3013909B2 (en) Cleaning equipment
JP2001028356A (en) Cleaning apparatus

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 19991022

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081119

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111119

Year of fee payment: 12

LAPS Cancellation because of no payment of annual fees