JPH06310741A - Solar cell element - Google Patents
Solar cell elementInfo
- Publication number
- JPH06310741A JPH06310741A JP5100886A JP10088693A JPH06310741A JP H06310741 A JPH06310741 A JP H06310741A JP 5100886 A JP5100886 A JP 5100886A JP 10088693 A JP10088693 A JP 10088693A JP H06310741 A JPH06310741 A JP H06310741A
- Authority
- JP
- Japan
- Prior art keywords
- light
- solar cell
- cell element
- layer
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、エネルギ変換効率を向
上させた太陽電池素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell device having improved energy conversion efficiency.
【０００２】[0002]
【従来の技術】太陽電池素子は、半導体のｐｎ接合に光
を照射することによって電流が流れる光起電力効果を利
用して太陽光エネルギを電気エネルギに変換する。2. Description of the Related Art A solar cell element converts solar energy into electric energy by utilizing a photovoltaic effect in which a current flows by irradiating a pn junction of a semiconductor with light.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、現状の
太陽電池素子では、太陽光エネルギの変換過程において
種々の損失のために変換効率が低下する。損失には、長
波長光の透過損失１５％、短波長光の熱変換による損失
３５％、電極抵抗等による電圧因子損失２１％、光反射
損失６％、キャリア再結合による損失６％、電極面積の
ための有効受光面積の減少による損失４％等がある。However, in the current solar cell element, the conversion efficiency is lowered due to various losses in the conversion process of solar energy. The loss includes 15% long wavelength light transmission loss, 35% short wavelength light heat conversion loss, 21% voltage factor loss due to electrode resistance, 6% light reflection loss, 6% loss due to carrier recombination, and electrode area. There is a loss of 4% due to the reduction of the effective light receiving area.
【０００４】これらの損失を少なくして変換効率を向上
させるために、従来より、表面ピラミッド構造、多層反
射防止膜、表面電極の微細化等が取り組まれているが、
未だ十分な効果は得られていない。In order to reduce these losses and improve the conversion efficiency, the surface pyramid structure, the multilayer antireflection film, the miniaturization of the surface electrodes and the like have been conventionally dealt with.
The full effect has not been obtained yet.
【０００５】そこで本発明の目的は、エネルギ変換効率
を大幅に向上させることのできる太陽電池素子を提供す
ることにある。Therefore, an object of the present invention is to provide a solar cell element capable of greatly improving the energy conversion efficiency.
【０００６】[0006]
【課題を解決するための手段】本発明の太陽電池素子
は、第１の波長領域の光を光電変換する半導体素子と、
この半導体素子の受光面側に設けられ、第１の波長領域
とは異なる第２の波長領域の光を第１の波長領域の光に
変換する変換層とを備えたものである。A solar cell element of the present invention comprises a semiconductor element for photoelectrically converting light in a first wavelength region,
A conversion layer is provided on the light-receiving surface side of the semiconductor element, which converts light in a second wavelength region different from the first wavelength region into light in the first wavelength region.
【０００７】[0007]
【作用】この太陽電池素子では、本来、半導体素子によ
る光電変換に寄与しない短波長成分等の第２の波長領域
の光が第１の波長領域の光に変換され、光電変換に寄与
することになる。変換層は、半導体ウエハ上に陽極化成
処理を施して得られた層や、蛍光物質による層等であ
る。In this solar cell element, the light of the second wavelength region such as the short wavelength component which originally does not contribute to the photoelectric conversion by the semiconductor element is converted into the light of the first wavelength region and contributes to the photoelectric conversion. Become. The conversion layer is a layer obtained by anodizing the semiconductor wafer, a layer made of a fluorescent substance, or the like.
【０００８】[0008]
【実施例】以下、本発明の実施例について詳細に説明す
る。EXAMPLES Examples of the present invention will be described in detail below.
【０００９】図１は本発明の第１実施例の太陽電池素子
の断面図である。この図に示すように、本実施例の太陽
電池素子は、ｐ型半導体Ｓｉ基板３の表面側にｎ+ 型半
導体層２を形成し、裏面側にｐ+ 型半導体層４を形成
し、ｎ+ 型半導体層２の上に受光面集電電極１を設け、
ｐ+ 型半導体層４の下に裏面集電電極５を設けて構成さ
れている。FIG. 1 is a sectional view of a solar cell element according to the first embodiment of the present invention. As shown in this figure, in the solar cell element of the present embodiment, the n + type semiconductor layer 2 is formed on the front surface side of the p type semiconductor Si substrate 3, and the p + type semiconductor layer 4 is formed on the back surface side. The light-receiving surface collecting electrode 1 is provided on the + type semiconductor layer 2,
A back surface collector electrode 5 is provided below the p + type semiconductor layer 4.
【００１０】ｐ型半導体Ｓｉ基板３は、例えば、ＣＺ法
により結晶成長させた厚さ約１００μｍのＳｉ基板にＢ
（ホウ素）をドープして形成される。ｎ+ 型半導体層２
は、例えば、拡散法によりｐ型半導体Ｓｉ基板３の受光
面側に接合深さ約０．５μｍのｎ+ 層領域を形成したも
のである。ｐ+ 型半導体層４は、例えば、イオン注入法
によりｐ型半導体Ｓｉ基板３の裏面側に接合深さ約１．
０μｍのｐ+ 層領域を形成したものである。受光面集電
電極１は、例えば、アルミニウムを真空蒸着、スパッタ
リング、フォトリソグラフィ等の手法で形成する。な
お、線幅、線間は有効受光面積を増すために微細パター
ンの方が良い。裏面集電電極５は、例えばアルミニウム
膜で形成する。The p-type semiconductor Si substrate 3 is, for example, a Si substrate having a thickness of about 100 μm which is crystal-grown by the CZ method and is B
It is formed by doping (boron). n + type semiconductor layer 2
Is an n + layer region having a junction depth of about 0.5 μm formed on the light-receiving surface side of the p-type semiconductor Si substrate 3 by a diffusion method, for example. The p + type semiconductor layer 4 has a junction depth of about 1.
The p + layer region of 0 μm is formed. The light-receiving surface collecting electrode 1 is formed by, for example, vacuum evaporation, sputtering, photolithography, or the like of aluminum. A fine pattern is preferable for the line width and the line interval in order to increase the effective light receiving area. The back surface collecting electrode 5 is formed of, for example, an aluminum film.
【００１１】本実施例の太陽電池素子の特徴は、Ｓｉ基
板３の表面に陽極化成処理を施し、この処理によって得
られた処理層の表面にｎ+ 型半導体層２を形成している
点にある。陽極化成処理によって得られた処理層は、紫
外光を吸収し、図２に示すように可視光（５００〜７０
０ｎｍ）を発光する。図３に示すように、太陽電池素子
において変換効率（集電効率）の高い波長領域は５００
〜９００ｎｍであるため、処理層による可視光発光現象
により、本来、太陽電池素子による光電変換に寄与せず
熱に変換されていた短波長成分（紫外光）が光電変換に
寄与することになり、太陽電池素子のエネルギ変換効率
が向上し、太陽電池素子の性能が向上する。The solar cell element of the present embodiment is characterized in that the surface of the Si substrate 3 is subjected to anodization treatment, and the n + type semiconductor layer 2 is formed on the surface of the treatment layer obtained by this treatment. is there. The treatment layer obtained by the anodization absorbs ultraviolet light and, as shown in FIG.
0 nm) is emitted. As shown in FIG. 3, the wavelength range of high conversion efficiency (collection efficiency) in the solar cell element is 500.
Since the wavelength is up to 900 nm, the short-wavelength component (ultraviolet light) originally converted into heat without contributing to photoelectric conversion by the solar cell element contributes to photoelectric conversion due to the visible light emission phenomenon due to the treatment layer. The energy conversion efficiency of the solar cell element is improved, and the performance of the solar cell element is improved.
【００１２】また、陽極化成処理によって得られた処理
層の表面はポーラス（多孔）であるため、反射防止機能
をも発揮し、これによってもエネルギ変換効率が向上す
る。なお、陽極化成処理によって得られた処理層が可視
光を発光すること、および処理層の表面がポーラスであ
ることは、例えば、１９９２年７月２４日に開催された
応用物理学会結晶工学分科会第９回結晶工学シンポジウ
ムで発表された「陽極化成Ｓｉの熱処理による微構造変
化」において述べられている。Further, since the surface of the treatment layer obtained by the anodizing treatment is porous, it also exhibits an antireflection function, which also improves the energy conversion efficiency. The fact that the treated layer obtained by anodizing treatment emits visible light and that the surface of the treated layer is porous is described in, for example, the Crystal Engineering Subcommittee of the Japan Society of Applied Physics held on July 24, 1992. It is described in "Microstructure change due to heat treatment of anodized Si" presented at the 9th Crystal Engineering Symposium.
【００１３】次に、陽極化成処理の方法について、一例
を挙げて説明する。本実施例では、図４に示すように、
Ｓｉウェハ１１とＰｔ（白金）電極１２を、フッ化水素
の４９％水溶液と水が１：１の割合の電解液１３に浸
し、Ｓｉウェハ１１とＰｔ電極１２間に電流密度８０ｍ
Ａ／ｃｍ2 で直流電流を、室温下で１０分間流して、陽
極化成処理を行い、その後、熱処理を行った。図５は以
上の処理後のＳｉウェハの表面構造を示すものである。Next, the method of anodizing treatment will be described with reference to an example. In this embodiment, as shown in FIG.
The Si wafer 11 and the Pt (platinum) electrode 12 are dipped in a 49% aqueous solution of hydrogen fluoride and an electrolyte solution 13 in which water has a ratio of 1: 1, and the current density between the Si wafer 11 and the Pt electrode 12 is 80 m.
A direct current of A / cm 2 was passed for 10 minutes at room temperature to perform anodization treatment, and then heat treatment was performed. FIG. 5 shows the surface structure of the Si wafer after the above processing.
【００１４】処理したＳｉ表面を、Ｘ線光電子分光（Ｘ
ＰＳ）、フーリエ変換赤外吸収（ＦＴＩＲ）、透過電子
顕微鏡（ＴＥＭ）で分析したところ、Ｓｉ、Ｏ、ＳｉＨ
を確認すると共に、単結晶とアモルファスが混在するこ
とが分かった。さらに、顕微ラマンによる深さ方向粒径
測定によれば、図５に示すように、粒径は表面側２１で
小さく（３ｎｍ以下）、裏面側２２で大きく（３ｎｍ以
上）なっていることが明らかとなった。X-ray photoelectron spectroscopy (X
PS, Fourier transform infrared absorption (FTIR), transmission electron microscope (TEM) analysis, Si, O, SiH
As a result, it was found that single crystal and amorphous were mixed. Furthermore, according to the depth-direction particle size measurement by Raman microscopy, it is clear that the particle size is small on the front surface side 21 (3 nm or less) and large on the back surface side 22 (3 nm or more) as shown in FIG. Became.
【００１５】図２は４Ｗの紫外光ランプを照射したとき
の処理層の発光スペクトルを示すものである。このよう
に、処理層から５００〜７００ｎｍのブロードなオレン
ジ色の発光が確認された。なお、処理層の発光強度は、
陽極化成処理後の熱処理温度に依存しており、３００℃
で最大の発光強度を確認した。また、発光強度のピーク
波長も、熱処理温度によって若干変化する。FIG. 2 shows the emission spectrum of the treatment layer when irradiated with a 4 W ultraviolet lamp. In this way, broad orange emission of 500 to 700 nm was confirmed from the treatment layer. The emission intensity of the treatment layer is
Depends on the heat treatment temperature after anodizing, 300 ℃
The maximum emission intensity was confirmed by. Also, the peak wavelength of the emission intensity slightly changes depending on the heat treatment temperature.
【００１６】図１に示す太陽電池素子を製造する場合、
陽極化成処理を施したＳｉ基板の表面にｎ+ 型半導体層
２を形成する。このように太陽電池素子の受光面側に陽
極化成処理を施した処理層を形成したことにより、処理
層による可視光発光現象によって短波長成分（紫外光）
が光電変換に寄与し、太陽電池素子の性能が向上した。When manufacturing the solar cell element shown in FIG.
The n + type semiconductor layer 2 is formed on the surface of the anodized Si substrate. By forming an anodized treatment layer on the light-receiving side of the solar cell element in this way, short wavelength components (ultraviolet light) are generated due to the visible light emission phenomenon of the treatment layer.
Contributed to photoelectric conversion, and the performance of the solar cell element was improved.
【００１７】次に、陽極化成処理を施したＳｉ基板の表
面の反射防止機能について説明する。図５に示すように
陽極化成処理を施したＳｉ基板の表面はポーラスな構造
となっているため、表面反射率が低下する。表１は、種
々の表面の構成における反射率を比較した表である。こ
の表に示される構成１〜７のうち、１〜５は陽極化成処
理を施さなかった場合であり、６、７は陽極化成処理を
施した場合である。また、構成５、７における２層反射
防止膜の条件は構成３と同様である。Next, the antireflection function of the surface of the Si substrate which has been subjected to anodization will be described. As shown in FIG. 5, the surface of the Si substrate that has been subjected to anodization has a porous structure, so the surface reflectance is reduced. Table 1 is a table comparing the reflectances of various surface configurations. Among the constitutions 1 to 7 shown in this table, 1 to 5 are the cases where the anodizing treatment is not applied, and 6 and 7 are the cases where the anodizing treatment is applied. The conditions for the two-layer antireflection film in the structures 5 and 7 are the same as those in the structure 3.
【００１８】[0018]
【表１】 また、図６は分光光度計を用いた反射スペクトルを示
し、（ａ）は表１における構成１、３について示し、
（ｂ）は表１における構成４、５について示し、（ｃ）
は表１における構成６、７について示している。[Table 1] 6 shows a reflection spectrum using a spectrophotometer, (a) shows the configurations 1 and 3 in Table 1,
(B) shows the configurations 4 and 5 in Table 1, and (c)
Shows the configurations 6 and 7 in Table 1.
【００１９】これら表１および図６から、陽極化成処理
によって表面反射率が低下することが分かる。そして、
この表面反射率の低下により、太陽電池素子のエネルギ
変換効率が向上し、性能が向上した。From Table 1 and FIG. 6, it can be seen that the surface reflectance is lowered by the anodizing treatment. And
Due to this decrease in the surface reflectance, the energy conversion efficiency of the solar cell element is improved and the performance is improved.
【００２０】以上説明したように、本実施例によれば、
太陽電池素子の受光面側に、陽極化成処理を施した処理
層を形成したので、処理層による可視光発光現象によ
り、本来、太陽電池素子による光電変換に寄与せず熱に
変換されていた短波長領域の光を光電変換することがで
きること、およびポーラスな処理層表面の反射防止機能
により、太陽電池素子のエネルギ変換効率を向上させ、
太陽電池素子の性能を向上させることができる。As described above, according to this embodiment,
Since the anodized treatment layer was formed on the light-receiving side of the solar cell element, the visible light emission phenomenon of the treatment layer originally caused a short conversion to heat without contributing to photoelectric conversion by the solar cell element. The ability to photoelectrically convert light in the wavelength region and the antireflection function of the surface of the porous treatment layer improve the energy conversion efficiency of the solar cell element,
The performance of the solar cell element can be improved.
【００２１】また、従来、短波長領域の光は熱に変換さ
れると、この熱が太陽電池素子の性能を劣化させる原因
となっていた。これに対し、本実施例では、短波長領域
の光が熱ではなく、光電変換に有効な可視光に変換され
るため、太陽電池素子を長時間連続使用しても性能劣化
が少ない。図７は、本実施例による太陽電池素子と従来
の太陽電池素子の性能を比較したもので、符号３１は本
実施例による太陽電池素子の出力の経時変化を示し、３
２は従来の太陽電池素子の出力の経時変化を示してい
る。Further, conventionally, when the light in the short wavelength region is converted into heat, this heat causes deterioration of the performance of the solar cell element. On the other hand, in the present embodiment, the light in the short wavelength region is not heat but is converted into visible light that is effective for photoelectric conversion, so that performance degradation is small even when the solar cell element is continuously used for a long time. FIG. 7 is a comparison of the performances of the solar cell element according to the present example and the conventional solar cell element. Reference numeral 31 indicates a change over time in the output of the solar cell element according to the present example.
2 shows the change with time of the output of the conventional solar cell element.
【００２２】なお、陽極化成処理の条件は実施例中に挙
げた条件に限定されず適宜に設定することができる。The conditions for the anodizing treatment are not limited to the conditions given in the examples and can be set appropriately.
【００２３】図８は本発明の第２実施例の太陽電池素子
の断面図である。本実施例の太陽電池素子は、ｐ型半導
体Ｓｉ基板４４の表面側にｎ型半導体層４３を形成し、
裏面側にｐ+ 型半導体層４５を形成し、ｎ型半導体層４
３の上に受光面集電電極４１を設け、ｐ+ 型半導体層４
５の下に裏面集電電極４６を設けたものにおいて、ｎ型
半導体層４３の上に数１０μｍ程度の透明な蛍光体層４
２を形成したものである。FIG. 8 is a sectional view of a solar cell element according to the second embodiment of the present invention. In the solar cell element of the present embodiment, the n-type semiconductor layer 43 is formed on the surface side of the p-type semiconductor Si substrate 44,
The p + type semiconductor layer 45 is formed on the back surface side, and the n type semiconductor layer 4 is formed.
The light-receiving surface collecting electrode 41 provided on the 3, p + -type semiconductor layer 4
5, a transparent collector layer 4 having a thickness of several tens of μm is formed on the n-type semiconductor layer 43.
2 is formed.
【００２４】蛍光体層４２の形成法としては、蛍光物質
を真空蒸着等の蒸着法で成膜したり、蛍光物質をアクリ
ル樹脂のＰＭＭＡ等高分子に分散した後スピンコート等
の手法で成膜する方法がある。As the method for forming the phosphor layer 42, a fluorescent substance is formed by a vapor deposition method such as vacuum deposition, or a fluorescent substance is dispersed in a polymer such as PMMA of acrylic resin and then formed by spin coating. There is a way to do it.
【００２５】また、蛍光物質としては、ベンゼン、ナフ
タレン、アントラセン、ピレン、ペリレン、９、１０−
ジフェニルアントラセン、ベンゾフェノン、ナフトキノ
ン、アントラキノン、ビアセチル、カルバゾール、ナフ
トール等がある。Further, as the fluorescent substance, benzene, naphthalene, anthracene, pyrene, perylene, 9,10-
Examples include diphenylanthracene, benzophenone, naphthoquinone, anthraquinone, biacetyl, carbazole and naphthol.
【００２６】本実施例では、蛍光体層４２が、使用する
蛍光物質に固有の波長の光を受けて、可視光領域におけ
る固有の波長の光を発光する。従って、従来、太陽電池
素子による光電変換に寄与していなかった波長領域の光
を光電変換することができ、エネルギ変換効率を向上さ
せて、太陽電池素子の性能を向上させることができる。In this embodiment, the phosphor layer 42 receives light having a wavelength unique to the fluorescent material used and emits light having a wavelength unique to the visible light region. Therefore, it is possible to photoelectrically convert light in a wavelength region that has not conventionally contributed to photoelectric conversion by the solar cell element, improve energy conversion efficiency, and improve performance of the solar cell element.
【００２７】その他の構成および作用は第１実施例と同
様である。Other configurations and operations are similar to those of the first embodiment.
【００２８】[0028]
【発明の効果】以上説明したように本発明によれば、受
光面側に、光電変換に寄与しない波長領域の光を光電変
換に寄与する波長領域の光に変換する変換層を設けたの
で、太陽電池素子のエネルギ変換効率を大幅に向上させ
ることができるという効果がある。As described above, according to the present invention, since the light receiving surface side is provided with the conversion layer for converting the light in the wavelength region not contributing to photoelectric conversion into the light in the wavelength region contributing to photoelectric conversion, There is an effect that the energy conversion efficiency of the solar cell element can be significantly improved.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の第１実施例の太陽電池素子の断面図で
ある。FIG. 1 is a sectional view of a solar cell element according to a first embodiment of the present invention.
【図２】図１の太陽電池素子の処理層の発光スペクトル
を示す特性図である。FIG. 2 is a characteristic diagram showing an emission spectrum of a treatment layer of the solar cell element of FIG.
【図３】図１の太陽電池素子の集電効率のスペクトルを
示す特性図である。FIG. 3 is a characteristic diagram showing a spectrum of current collection efficiency of the solar cell element of FIG.
【図４】陽極化成処理の方法を示す説明図である。FIG. 4 is an explanatory diagram showing a method of anodizing treatment.
【図５】陽極化成処理後のＳｉ基板の表面構造を示す説
明図である。FIG. 5 is an explanatory diagram showing a surface structure of a Si substrate after anodizing treatment.
【図６】種々の表面の構成における反射スペクトルを示
す特性図である。FIG. 6 is a characteristic diagram showing reflection spectra in various surface configurations.
【図７】本発明の第１実施例の太陽電池素子と従来の太
陽電池素子の出力の経時変化を示す特性図である。FIG. 7 is a characteristic diagram showing changes over time in the output of the solar cell element of the first embodiment of the present invention and the conventional solar cell element.
【図８】本発明の第２実施例の太陽電池素子の断面図で
ある。FIG. 8 is a sectional view of a solar cell element according to a second embodiment of the present invention.
１ 受光面集電電極 ２ ｎ+ 型半導体層 ３ ｐ型半導体Ｓｉ基板 ４ ｐ+ 型半導体層 ５ 裏面集電電極1 Light-receiving surface collecting electrode 2 n + type semiconductor layer 3 p-type semiconductor Si substrate 4 p + type semiconductor layer 5 Back surface collecting electrode
Claims (1)
体素子と、 この半導体素子の受光面側に設けられ、前記第１の波長
領域とは異なる第２の波長領域の光を前記第１の波長領
域の光に変換する変換層と、 を具備することを特徴とする太陽電池素子。1. A semiconductor element for photoelectrically converting light in a first wavelength region, and a light in a second wavelength region different from the first wavelength region, the light being provided on the light-receiving surface side of the semiconductor device. A solar cell element, comprising: a conversion layer for converting light in a wavelength region of 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5100886A JPH06310741A (en) | 1993-04-27 | 1993-04-27 | Solar cell element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5100886A JPH06310741A (en) | 1993-04-27 | 1993-04-27 | Solar cell element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06310741A true JPH06310741A (en) | 1994-11-04 |
Family
ID=14285815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5100886A Pending JPH06310741A (en) | 1993-04-27 | 1993-04-27 | Solar cell element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06310741A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1117201A (en) * | 1997-04-28 | 1999-01-22 | Sharp Corp | Solar cell and its manufacture |
| JP2007281448A (en) * | 2006-04-05 | 2007-10-25 | Samsung Sdi Co Ltd | Solar cell and manufacturing method thereof |
| JP2008205398A (en) * | 2007-02-22 | 2008-09-04 | Sharp Corp | Photoelectric conversion device and its manufacturing method |
-
1993
- 1993-04-27 JP JP5100886A patent/JPH06310741A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1117201A (en) * | 1997-04-28 | 1999-01-22 | Sharp Corp | Solar cell and its manufacture |
| JP2007281448A (en) * | 2006-04-05 | 2007-10-25 | Samsung Sdi Co Ltd | Solar cell and manufacturing method thereof |
| US8227881B2 (en) | 2006-04-05 | 2012-07-24 | Samsung Sdi Co., Ltd. | Solar cell and its method of manufacture |
| JP2008205398A (en) * | 2007-02-22 | 2008-09-04 | Sharp Corp | Photoelectric conversion device and its manufacturing method |
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