JPH06306587A - Ion-plating device - Google Patents

Abstract

PURPOSE:To economically obtain an ion an ion-plating device which has a simple structure and is capable of forming a thick film of ultrahigh purity by using almost all substances as evaporation materials. CONSTITUTION:A bar-shaped substance 10 is used as a substance to be evaporated and ionized by heating for forming a film on a substrate 7 for vapor deposition in a vacuum vessel 3. The bar-shaped substance 10 is rotary driven around a shaft line and is sent out in the shaft line direction so as to slowly approach the substrate 7 as well by a drive mechanism part 14. Further a laser beam 11 radiated as an energy beam a carbon dioxide gas laser 12 being a beam generating source is used as an heat source for evaporating the bar-shaped substance 10 by heating.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion plating apparatus which uses almost all substances as evaporation materials and can thereby form a thick film with ultrahigh purity.

[0002]

2. Description of the Related Art Ion plating, which is known as one of the vacuum deposition techniques, forms a metal or oxide film on the surface of many objects such as watch bands, personal accessories, and electronic parts. This is the method used to do this. In particular, in this type of ion plating method, ionized particles collide with high kinetic energy as compared with ordinary vacuum vapor deposition or sputtering, so that a strong force is applied to the film formed on the substrate on the vapor deposition side. It is an excellent method that can obtain adhesion force and can perform precise and high hardness coating.

FIG. 3 shows a schematic structure of a conventional ion plating apparatus, and in FIG.
The ion plating apparatus indicated by 1 has a vacuum container 3 on the apparatus base 2. A target holder 4 is provided as an evaporation source on the bottom side of the vacuum container 3, and a substance 5 is placed as an evaporation material in the upper surface of the target holder 4.

Reference numeral 6 denotes a target holder 4 in the vacuum container 3.
The high frequency coil 6 is disposed above the target.
Is disposed above the vapor deposition substrate 7 to which the ionized substance particles are attached as a coat film by being accelerated and colliding. Reference numeral 8 in the drawing denotes a support arm that supports the substrate 7 in the vacuum container 3.

According to the ion plating apparatus 1 as described above, the substance 5 to be adhered to the substrate 7 to be a coat film by being evaporated is placed in the concave portion on the upper surface side of the target holder 4. Then, when the target holder 4 is energized and heated to near or above the melting point of the substance 5 by the resistance heating method, the substance 5 is evaporated.

The particles of the evaporated substance 5 are collected in the vacuum container 3
While flying inside, it is ionized in the high-frequency coil 6 arranged above the target holder 4. On the other hand, a negative DC voltage is applied to the vapor deposition substrate 7, causing evaporation,
The ionized substance particles are accelerated and collide with and adhere to the substrate 7, whereby a dense and strong film is formed.

Here, in order to heat the above-mentioned substance 5,
In addition to the resistance heating type described above, there is also an electron beam irradiation type.

[0008]

In the resistance heating type as described above, since the target holder 4 needs to have heat resistance higher than the melting point of the substance 5, it is necessary to use a special metal or the like capable of withstanding an ultrahigh temperature. Had been formed. However, in such a resistance heating type, not only the upper limit of the evaporation temperature is limited by the heat resistance of the target holder 4, but also a large holder 5 is required when attempting to evaporate a large amount of the substance 5, and the heat retention thereof is also required. Therefore, there is a problem that the device becomes large in size and impurities are mixed from the holder 5.

On the other hand, the electron beam irradiation method also requires a crucible for containing the substance 5. In such an electron beam irradiation method, only a portion of the substance 5 irradiated with the electron beam can be heated and melted and evaporated, and a film of higher purity can be formed as compared with the resistance heating method described above. However, only a small amount of the substance 5 can be put inside the crucible as described above, and there are also problems such as cooling of the crucible and the limit of electron beam power. Therefore, mass production and thick film formation are performed. That was a practical problem.

The present invention has been made in view of the above circumstances, and the high temperature of a substance can be easily achieved by a simple and economical structure without using a target holder, a crucible, or the like. The object is to obtain an ion plating apparatus capable of evaporating a large amount of substances with high purity and forming a thick film as a coating with ultrahigh purity.

[0011]

In order to meet such a demand, the ion plating apparatus according to the present invention uses a substance that is heated and vaporized and ionized to form a film on a vapor deposition substrate in a vacuum container. Using a rod-shaped substance, and with a mechanism for rotating the rod-shaped substance around the axis and a mechanism for feeding the rod-shaped substance in the axial direction so as to gradually approach the substrate, a light beam as a heat source for heating and evaporating the rod-shaped substance, A beam generation source for irradiating an energy beam such as an electron beam is provided.

[0012]

According to the present invention, the rod-shaped substance is rotated around the axis in the vacuum container and is fed in the axial direction so as to gradually approach the substrate side, while the tip of the rod-shaped substance is fed from the beam generation source. Of the ionized evaporation by irradiating it with a light beam or an electron beam to heat and evaporate it, ionize it with a high-frequency coil placed above it, and accelerate it to collide with the deposition substrate placed above it. Particles can be deposited and deposited to form a thick film with ultra-high purity.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an embodiment of the ion plating apparatus according to the present invention, in which the same or corresponding parts as those in FIG. Is omitted.

According to the ion plating apparatus 1 of the present invention, the substance is heated and vaporized in the vacuum container 3 to form the vaporized particles, and the vaporized particles are used for the high frequency coil 6
When a film is formed by ionizing using a high frequency electric field or the like in the above, and further accelerating by a direct current electric field to deposit and deposit on the vapor deposition substrate 7, a rod-shaped substance 10 is used as a substance, and the rod-shaped substance 10 is used as an axis line. The rod-shaped substance 1 is provided with a mechanism for rotating the rod-shaped substance and a mechanism for feeding the rod-shaped substance 10 in the axial direction so as to gradually approach the substrate 7.
It is characterized in that a carbon dioxide laser 12 is provided as a beam generation source that irradiates a light beam 11 as an energy beam as a heat source for heating and evaporating 0.

Reference numeral 13 in the figure is provided in the apparatus base 2 in an upright state to hold the rod-shaped substance 10 in the vacuum container 3 in a state of being faced from the bottom side and to rotate and send out the rod-shaped substance 10. A drivable shaft 14 is a drive mechanism portion for rotating the shaft 13 and sending it out in the axial direction.

As the rod-shaped substance 10 described above, any of various evaporation materials such as metals and oxides may be used. The oscillation wavelength of the carbon dioxide laser is 10.6 μm.
It is necessary that the substance has a light absorption band at m.
However, since many substances have a light absorption band in the infrared region near 10 μm, most of the materials can be used as the rod-shaped substance 10. In this example, a case where a cylindrical quartz glass rod is used will be described.

Further, the light beam 11 from the carbon dioxide laser 12 is introduced into the container 3 through the window 16 formed on the side of the vacuum container 3 after the focus is adjusted by the lens system 15. ing.

In the apparatus 1 of the present embodiment as described above, when the light beam 11 from the carbon dioxide gas laser 12 is applied to the tip of the rod-shaped substance 10 in the vacuum container 3, the light beam 11 is absorbed there and becomes heat, Thereby, the rod-shaped substance 10 can be heated and evaporated.

Here, since the rod-shaped substance 10 is rotationally driven around the axis by the drive mechanism portion 14 via the shaft 13, the tip portion can be heated and vaporized substantially uniformly over the whole. Further, the rod-shaped substance 10 becomes shorter in length as the tip portion evaporates, and if it is left as it is, the light beam 11 is finally not irradiated to the rod-shaped substance 10. However, in the present invention, the rod-shaped substance 10 is evaporated. With the shaft 12 and the drive mechanism portion 14 reduced by the length,
It is configured to be fed into the vacuum container 3 at a constant speed, and as a result, a constant amount of vaporized particles can be continuously evaporated from the substance 10.

Further, as in the ordinary ion plating apparatus 1, an ionization portion of vaporized particles, a DC electric field applying portion, and the like are attached to portions other than the above-mentioned portions, whereby the tip portion of the rod-shaped substance 10 is attached. The vaporized particles obtained by the heat vaporization of are ionized and accelerated, and collide with the substrate 7 disposed thereabove to be adhered and deposited. As a result, dense and high quality (ultra high purity)
It is possible to form a thick quartz glass film on the substrate 7.

Particularly, in the conventional apparatus, only a quartz glass film having a maximum size of about 15 μm can be formed, and in the final process of forming the glass film, not only the substance 10 but also evaporation from the target holder and the like are mixed with impurities, Although a problem such as the formation of only an inhomogeneous film has occurred, the ion plating apparatus 1 according to the present invention can form a highly pure homogeneous film with a thickness of 50 μm or more. For example, when the refractive index of the quartz glass film formed by the device of the present invention was measured, it was 1.458, and it was confirmed that a good result was obtained as a component of the film.

FIG. 2 shows another embodiment of the present invention. In these figures, the same or corresponding parts as in FIG. Now, in this embodiment, instead of the carbon dioxide laser 12 for irradiating the light beam 11 which is the heat source of the rod-shaped material 10 in the above-mentioned embodiment,
The helium neon laser 20 is used, and its light 21 is introduced into the container 3 through a window 22 provided on the side of the vacuum container 3 to irradiate the tip of the rod-shaped substance 10.

Further, in this embodiment, a photodetector 24 for receiving the light 21 from the helium neon laser 20 through the window 23 on the side opposite to the vacuum chamber 3 is provided. When the detector 24 detects the light 21, that is, when the tip of the rod-shaped substance 10 is evaporated and the rod-shaped substance 10 is shortened, the shaft 13 is driven and controlled so as to send out the rod-shaped substance 10 in the axial direction. I am configuring.

That is, since the tip portion of the rod-shaped substance 10 has a cylindrical or spindle shape, the light 21 is always reflected and confused at this portion and is not input to the photodetector 24. Further, in this embodiment, in the initial state, the switch (not shown) in the feeding mechanism of the shaft 13 holding the rod-shaped substance 10 is turned off. Then, by configuring the feeding mechanism of the drive mechanism portion 14 of the shaft 13 so as to be in the ON state only when the electric output from the photodetector 24 described above is at a certain level or more, it is always kept OFF. Therefore, the rod-shaped material 10 is not sent out.

On the other hand, if the tip portion of the rod-shaped substance 10 disappears as it evaporates, the light 21 passes directly above the tip portion of the rod-shaped substance 10 and is input to the photodetector 24. At this time, the rod-shaped substance 10 is fed into the vacuum container 3 in a direction approaching the substrate 7 by configuring an electric circuit so that the switch of the feeding mechanism of the shaft 13 is turned on by the electric output from the photodetector 24. It will be. Then, when the tip of the rod-shaped substance 10 is sent to a position where the light 21 is blocked, the electric output from the photodetector 24 is lost again and the switch of the sending mechanism is turned off.

Thereafter, by repeating ON / OFF of the switch in the photodetector 24 described above, the positional relationship between the light 21 of the helium neon laser 20 and the tip of the rod-shaped substance 10 is ion-plated by this apparatus. While doing
It can be held constant, so that a constant amount of evaporation always occurs, and automatic and continuous ion plating can be performed.

With this structure as well, as in the above-described embodiment, the rod-shaped substance 10 is fed in the axial direction in the vacuum container 3 so as to approach the substrate 7, and the tip portion of the rod-shaped substance 10 is moved. Is irradiated with light 21 from a helium neon laser 20 which is a beam generation source, is heated and vaporized, and is ionized by a high frequency coil 6 arranged above it, and further accelerated to a vapor deposition substrate 7 arranged above it. Then, they collide with each other to deposit and deposit the ionized vaporized particles, so that a thick film can be formed with ultra-high purity.

Here, in the above-described embodiment, the O of the light 21 is
The feeding speed is automatically controlled by N / OFF. As an automatic control method, the tip of the rod-shaped substance 10 is observed on the TV screen so that it is at a fixed position on the screen. Other methods, such as helium neon laser 20 or carbon dioxide laser 1 may be used.
It is preferable that the positional relationship between the light beams 21 and 11 from the beam transmitters such as 2 and the tip of the rod-shaped substance 10 be kept constant during the ion plating.

It is needless to say that the present invention is not limited to the structure of the embodiment described above, and the shape, structure, etc. of each part of the ion plating apparatus 1 can be appropriately modified or changed. For example, in the above-mentioned two embodiments, the case where the carbon dioxide gas laser 12, the helium neon laser 20 or the like is used as the heat source for heating and evaporating the rod-shaped substance 10 has been described, but the present invention is not limited to this and may be changed depending on the material of the substance 10. It will be easily understood that beam energy such as an electron beam may be used as a heat source as long as it can be sufficiently heated.

[0030]

As described above, according to the ion plating apparatus of the present invention, a rod-shaped substance is used as a substance that is heated and vaporized and ionized to form a film on a substrate for vapor deposition in a vacuum container. A mechanism for rotating the rod-shaped substance around the axis and a mechanism for feeding the rod-shaped substance in the axial direction so that the rod-shaped substance is gradually brought closer to the substrate are provided, and the energy of light beam, electron beam, etc. is used as a heat source for heating and evaporating the rod-shaped substance. Since the beam generation source for irradiating the beam is provided, various excellent effects listed below can be achieved in spite of the simple and economical structure.

When holding and heating the substance to be vaporized by the ion plating, the conventional target holder and crucible are unnecessary, so that the vaporization temperature of the substance is not limited, and the structure is simple and economical. Thus, a film made of a high-purity substance can be easily formed on the substrate.

Since the substance to be vaporized has a rod shape and can be continuously supplied, a large amount of the substance can be heated and vaporized to form a high-quality thick film, as compared with the case where the conventional apparatus is used.

A holder for installing the target holder and the crucible in the vacuum container and a heat-retaining and cooling portion of the holder are not necessary. For example, a general-purpose device such as a carbon dioxide gas laser or a simple feeding mechanism may be partially added. Since the device can be configured by, there are advantages such as excellent mass productivity and economical efficiency.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram illustrating an embodiment of an ion plating apparatus according to the present invention and illustrating a configuration of a main part.

FIG. 2 is a schematic configuration diagram illustrating another embodiment of the ion plating apparatus according to the present invention and illustrating the configuration of a main part.

FIG. 3 is a schematic configuration diagram illustrating a conventional ion plating apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Ion plating device 3 Vacuum container 6 High frequency coil 7 Substrate for vapor deposition 8 Support arm 10 Rod-like substance 11 Light beam (beam energy) 12 Carbon dioxide laser (beam source) 13 Shaft 14 Driving mechanism part 15 Lens system 16 Window part 20 Helium Neon laser (beam source) 21 light (beam energy) 22 window 23 window 24 photodetector

Claims (1)

[Claims] 1. A substance is heated and vaporized in a vacuum container to form vaporized particles, which are ionized by utilizing a high frequency electric field and further accelerated by a direct current electric field to be deposited and deposited on a substrate for vapor deposition. In the ion plating device, a rod-shaped substance is used as the substance, and a mechanism for rotating the rod-shaped substance around the axis and a mechanism for feeding the rod-shaped substance in the axial direction so as to gradually approach the substrate are provided. An ion plating apparatus comprising a beam generation source for irradiating an energy beam such as a light beam or an electron beam as a heat source for heating and evaporating a rod-shaped substance.