JPH06302762A - Resin-sealed semiconductor device - Google Patents

Abstract

PURPOSE:To provide a resin-sealed semiconductor device with a plurality of IC chips each having an equal heat dissipating capacity. CONSTITUTION:The resin-sealed semiconductor device is composed of respective IC chips 1A, 1B and a plurality of inner leads 3 and outer leads 4 electrically connected to respective IC chips 1A, 1B to be resin-sealed respectively in parallel with the outer leads 4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device having a plurality of IC chips.

[0002]

2. Description of the Related Art A conventional semiconductor device of this type will be described with reference to a semiconductor package shown in FIG. In the figure, 1A and 1B are IC chips, 2 is a die pad of a lead frame in which these IC chips 1A and 1B are die-bonded on both sides, 3 and 4 are die pads 2 respectively.
Similarly, inner leads and outer leads 5A and 5B forming a lead frame are gold wires for electrically connecting the inner lead 3 and the electrode pads 6A and 6B formed on the surfaces of the IC chips 1A and 1B, respectively. ,
7 is an IC chip 1 connected by gold wires 5A and 5B
A molding resin for sealing A, 1B and the inner leads 3, and 8 is a mounting substrate on which the resin-sealed semiconductor device sealed by the molding resin 7 is mounted.

Therefore, the conventional resin-sealed semiconductor device is
Since a plurality of IC chips 1A and 1B are die-bonded on both sides of the die pad 2 in FIG. 20, a mounting substrate 8 is used rather than a semiconductor device in which one IC chip is resin-sealed.
On the other hand, the IC chips can be mounted at high density.

[0004]

However, as shown in FIG.
In the conventional resin-encapsulated semiconductor device shown in FIG. 1, the outer leads 4 are bent and formed on one surface side of the molding resin 7 and mounted on the mounting substrate 8. Therefore, one IC chip 1A in the molding resin 7 is mounted. Is on the opposite side of the mounting board 8 and the other IC chip 1B faces the mounting board 8, so that the heat dissipation conditions of these IC chips 1A and 1B are different, and the former IC chip 1A has good heat dissipation. , The latter IC chip 1B
However, there is a problem that heat dissipation is hindered by the mounting substrate 8 and heat dissipation is poor.

The present invention has been made in order to solve the above problems, and an object thereof is to provide a resin-sealed semiconductor device in which a plurality of IC chips have equivalent heat dissipation.

[0006]

According to a first aspect of the present invention, there is provided a resin-encapsulated semiconductor device which has an IC chip on each side of a die pad of a lead frame and is electrically connected to each IC chip. A resin-sealed semiconductor device having a plurality of inner leads and outer leads, which is configured by resin-sealing a plurality of IC chips so as to be parallel to the outer leads.

The resin-encapsulated semiconductor device according to a second aspect of the present invention is the resin-sealed semiconductor device according to the first aspect, wherein a plurality of protrusion electrodes are provided on the surface of each IC chip, and the protrusion electrodes are provided. Each of the IC chips is bonded to the inner lead via the above.

According to a third aspect of the present invention, in the resin-encapsulated semiconductor device according to the first aspect of the present invention, the plurality of inner leads are respectively provided with protruding electrodes, and the protruding electrodes are interposed therebetween. The IC chip is formed by bonding the IC chips to the inner leads.

According to a fourth aspect of the present invention, in the resin-encapsulated semiconductor device according to the third aspect of the present invention, protruding electrodes are provided on both surfaces of the plurality of inner leads, and these protruding electrodes are provided. Each of the IC chips is bonded to the inner lead via the above.

Further, a resin-sealed semiconductor device according to a fifth aspect of the present invention is the resin-sealed semiconductor device according to the first aspect, wherein the IC chips are formed of silicon or ceramics on which wiring patterns are formed on both sides. The wiring board is electrically joined to the wiring patterns on both sides of the board and the outer leads are joined to the wiring board.

According to a sixth aspect of the present invention, in the resin-sealed semiconductor device according to the first or second aspect, the IC chips or the inner leads are separated from the protruding electrodes. Then, the protruding electrodes are formed by providing protruding portions having the same height.

According to a seventh aspect of the present invention, in the resin-encapsulated semiconductor device according to the first aspect of the invention, an extended portion for supporting the die pad at the time of wire bonding is provided on the periphery of the die pad. It is configured by extending in the horizontal direction.

According to an eighth aspect of the present invention, in the resin-sealed semiconductor device according to the first aspect, the IC chips individually die-bonded to the die pads of different lead frames, and the respective ICs. The chip is provided with inner leads electrically connected to each other, and is formed by sealing with a molding resin in a state where the lead frames are bonded and integrated.

According to a ninth aspect of the present invention, in the resin-encapsulated semiconductor device according to the first aspect of the invention, an IC chip is attached to a carrier tape in which an inner lead portion and an outer lead portion are attached as a wiring pattern. The carrier tape is attached, the carrier tape is joined to a lead frame, and the carrier tape is sealed with a mold resin.

According to a tenth aspect of the present invention, in the resin-sealed semiconductor device according to the first aspect,
The continuous lead of the lead frame is joined to a plurality of electrodes of the same or different IC chips.

The resin-encapsulated semiconductor device according to claim 11 of the present invention is the resin device according to claim 1, wherein
IC chips individually die-bonded to die pads of different lead frames, inner leads electrically connected to each IC chip, and individually molded resin so that they expose the non-attachment surface of the die pad. A sealed single product is provided, and these single products are bonded and integrated on the non-mounting surface side.

[0017]

According to the invention described in claim 1 of the present invention, since the plurality of IC chips of the resin-sealed semiconductor device are parallel to the outer leads, the resin-sealed semiconductor device is mounted. When mounted on a substrate, all the IC chips are perpendicular to the mounting substrate and do not face the mounting substrate, so that there is no difference in heat dissipation between the IC chips.
The heat can be similarly radiated from the C chip.

According to a second aspect of the present invention, in the invention according to the first aspect, the resin-sealed semiconductor device has a plurality of IC chips arranged in parallel to the outer leads. In addition, since each IC chip is joined to the inner lead, the wire bonding step can be omitted at the time of manufacturing, and heat can be similarly radiated from each IC chip mounted on the mounting board.

Further, according to the invention described in claim 3 and claim 4 of the present invention, in the invention described in claim 1,
In the resin-encapsulated semiconductor device, a plurality of IC chips are parallel to the outer leads, and each IC chip is joined to the inner leads via the protruding electrodes, so that the wire bonding step is omitted during manufacturing. Therefore, heat can be similarly radiated from each IC chip mounted on the mounting board.

According to a fifth aspect of the present invention, in the first aspect of the invention, the resin-sealed semiconductor device has a plurality of IC chips arranged in parallel with the outer leads. On each side of the wiring board
Since the C chips are joined, the wire bonding step can be omitted during manufacturing, and heat can be similarly radiated from each IC chip mounted on the mounting substrate.

According to a sixth aspect of the present invention, in the second or third aspect of the invention, the resin-sealed semiconductor device has a plurality of IC chips for the outer leads. Are parallel and each I
Since the protruding portion having the same height is provided on the C chip or each inner lead so as to be separated from the protruding electrode, a resin-sealed semiconductor device can be manufactured without damaging the IC chips 1A and 1B during wire bonding. Can

According to a seventh aspect of the present invention, in the first aspect of the invention, the resin-sealed semiconductor device has a plurality of IC chips arranged in parallel with the outer leads. In addition, the extension part for supporting the die pad at the time of wire bonding is horizontally extended around the periphery of the die pad, so that the extension part of the die pad is supported on a stage etc. to perform wire bonding from both sides of the die pad. You can

According to an eighth aspect of the present invention, in the invention of the first aspect, the resin-sealed semiconductor device has a plurality of IC chips arranged in parallel with the outer leads. In addition, since a plurality of different IC chips and the like are separately assembled, bonded together, and sealed with the mold resin, the manufacturing process can be simplified.

According to a ninth aspect of the present invention, in the invention according to the first aspect, the resin-sealed semiconductor device has a plurality of IC chips arranged in parallel with the outer leads. At the same time, the IC chip was attached to the carrier tape in which the inner lead portion and the outer lead portion were attached as a wiring pattern, and this carrier tape was joined to the lead frame and sealed with the mold resin. The resin-sealed semiconductor device can be easily manufactured.

According to the invention of claim 10 of the present invention, in the invention of claim 1, the plurality of IC chips of the resin-sealed semiconductor device are parallel to the outer leads. In addition, since the continuous leads of the lead frame are joined to the plurality of electrodes of the same or different IC chips, each IC chip can be continuously and efficiently joined to each inner lead, and the impedance can be reduced.

According to an eleventh aspect of the present invention, in the invention according to the first aspect, the resin-sealed semiconductor device has a plurality of IC chips arranged in parallel with the outer leads. In addition, since the IC chips are assembled on separate lead frames to form independent single products and the individual products are bonded and integrated, the manufacturing process can be simplified.

[0027]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the embodiments shown in FIGS.

Example 1. As shown in FIGS. 1 and 2, the resin-encapsulated semiconductor device of this embodiment has a plurality of (two in this embodiment) IC chips 1A and 1B and these IC chips 1A and 1B on both sides. A die pad 2 of a die-bonded lead frame, an inner lead 3 and an outer lead 4 that form a lead frame similarly to the die pad 2, each inner lead 3 and electrodes formed on the surfaces of the IC chips 1A and 1B. Pads 6A and 6B
Wires 5A and 5B that electrically connect the two, and IC chips 1A and 1A connected by these gold wires 5A and 5B.
B and a molding resin 7 for encapsulating the inner lead 3, and the IC chips 1A and 1B are resin-encapsulated so as to be parallel to the outer lead 4 respectively. . Therefore, the outer leads 4 are all extended outward from the center of one side of the molding resin 7 in the width direction so as to form a predetermined gap so as not to interfere with each other. That is, as shown in FIG. 2, when the resin-sealed semiconductor device of this embodiment is mounted on a mounting substrate (not shown) via the outer leads 4, the IC chips 1A and 1B in the molding resin 7 are mounted. It is arranged so as to be arranged vertically to the substrate so that heat radiation conditions to the outside are equal. Incidentally, FIG.
The symbols A and B attached to the outer leads 4 in FIG. 2 are the outer leads 4 connected to the IC chips 1A and 1B, respectively.
Is shown.

Therefore, according to this embodiment, when the resin-encapsulated semiconductor device is mounted on the mounting board, the IC chips 1A and 1B in the mold resin 7 are perpendicular to the mounting board, and therefore each IC chip is mounted. Since the heat generated in 1A and 1B is evenly radiated to the outside, heat storage in either one of the IC chips can be prevented, and the degree of freedom in thermal design can be increased.

Example 2. The resin-encapsulated semiconductor device of this embodiment has two IC chips 1 as shown in FIGS.
Projection electrodes (hereinafter referred to as "bumps") 9 having A and 1B and on the electrode pads of these IC chips 1A and 1B.
A and 9B are provided and the IC chips 1A and 1B are provided.
The inner leads 3 belonging to B are connected to the bumps 9A,
It is constructed by directly bonding to 9B. Then, when manufacturing the resin-encapsulated semiconductor device of this embodiment,
For example, first, as shown in FIGS. 4 and 5, the bumps 9A of the IC chip 1A and the inner leads 3 for the chip 1A are joined, and then, as shown in FIGS.
By bonding the bumps 9B of the IC chip 1B and the remaining inner leads 3 from the side opposite to A, they are sealed with a molding resin 7, and a predetermined molding process is performed so that the outer leads 4 can be mounted. The resin-encapsulated semiconductor device of this embodiment shown in FIG. 7 can be manufactured.

Therefore, according to this embodiment, the same effect as that of the first embodiment can be expected, the wire bonding step can be omitted, and the manufacturing process can be simplified.

Example 3. The resin-encapsulated semiconductor device of this embodiment has the same configuration as that of the second embodiment except that the bumps 9A and 9B are provided on the inner leads 3 instead of on the electrode pads of the IC chips 1A and 1B. ing. Therefore, also in this embodiment, the same operational effect as that of the second embodiment can be expected.

Example 4. The resin-encapsulated semiconductor device of this embodiment has bumps 9A on the front and back surfaces of the same inner lead 3,
The configuration is similar to that of the third embodiment except that 9B is provided, and in this embodiment, the same operational effect can be expected as in the third embodiment.

Example 5. As shown in FIGS. 8 and 9, the resin-sealed semiconductor device of this embodiment is configured by using a wiring substrate 11 having wiring patterns 10 formed on the front and back surfaces instead of the inner leads 3. is there. That is, the wiring board 11 is formed of an insulating material such as silicon or ceramics, the wiring patterns 10 corresponding to the inner leads are formed on the front and back surfaces thereof, and the electrode pads of the wiring patterns 10 on the front and back surfaces are formed. Bump 9 on top
A and 9B are provided respectively. Also, the wiring board 1
The wiring patterns 10 on the front and back sides of No. 1 are through holes 10
It is electrically connected via A. Then, the outer leads 4 are respectively joined at one side edge of the wiring board 11 on which the pattern 10 is extended. Therefore, after the IC chips 1A and 1B are bonded to the bumps 9A and 9B on each wiring pattern 10 from both sides of the wiring substrate 11, the outer leads 4 are bonded to the respective wiring patterns 10 and then the mold resin 7 is used. The resin-encapsulated semiconductor device of this embodiment can be manufactured by sealing the IC chips 1A, 1B and the like in the same manner as in the above-mentioned respective embodiments. still,
The bumps 9A and 9B may be provided on the IC chips 1A and 1B. Therefore, also in this embodiment, it is possible to expect the same effects as the above-mentioned embodiments.

Example 6. As shown in FIG. 10, the resin-encapsulated semiconductor device of this embodiment has the second embodiment to the sixth embodiment.
In addition to the bumps 9A and 9B, dummy dumps 12A and 12B are provided on the inner lead 3 or the wiring pattern 10 in accordance with each of the above embodiments. These dummy bumps 12A and 12B are shown in FIG.
As shown in FIG. 2, when the IC chip 1B is supported by the bonding stage 13A and the wire bonding is performed using the bonding tool 13B, the IC chips 1A, 1B
Is configured so as to prevent the inner leads 3 from contacting the respective surfaces of the IC chips 1A and 1B and damaging the IC chips 1A and 1B in a portion where there is no dump indicated by circled 14 in FIG. . Therefore, when manufacturing the resin-sealed semiconductor device of this embodiment, the IC chips 1A, 1
The resin-encapsulated semiconductor device can be manufactured without damaging B, and the yield thereof can be improved.

Example 7. As shown in FIGS. 12 and 13, the resin-encapsulated semiconductor device of this embodiment has the same configuration as that of the first embodiment except that an extension portion 2A extending in the horizontal direction is provided on the outer periphery of the die pad 2. . That is, the resin-encapsulated semiconductor device of this embodiment has a structure shown in FIG.
As shown in FIG. 5, the die pad 2 can be supported by the stage 15 by the extension portion 2A. That is, in the resin-sealed semiconductor device of the first embodiment, since the IC chips 1A and 1B are attached on both sides of the die pad 2, the entire die pad 2 is attached to the stage 15 during wire bonding.
Therefore, the die pad 2 is supported by the extending portion 2A. Therefore, according to this embodiment, by supporting the extended portion 2A of the die pad 2 on the stage 15, wire bonding can be performed from both sides of the die pad 2.

Example 8. As shown in FIGS. 14 and 15, the resin-sealed semiconductor device of this embodiment includes IC chips 1A and 1B individually die-bonded to die pads 2 and 2 of different lead frames, and IC chips 1A and 1B, respectively. 1
B includes gold wires 5A and 5B electrically connected to the respective inner leads 3, and the lead frame is bonded as shown in FIG.
A and 1B are formed by sealing with a mold resin 7 in a state of protruding from both surfaces of the die pads 2 and 2. Therefore, when manufacturing the resin-encapsulated semiconductor device of this embodiment, first, as shown in FIG. 14, the IC chips 1A, 1B, etc. are attached to individual lead frames, and the gold wires 5A, 5B are respectively wire-bonded. , These two lead frames are bonded to each other on the surfaces on which the IC chips 1A and 1B are not attached, as shown in FIG.
Then, the resin-sealed semiconductor device can be manufactured by simply sealing the IC chips 1A, 1B, etc. with the mold resin 7 as shown in the figure, and the manufacturing process can be simplified.

Example 9. In the resin-encapsulated semiconductor device of this embodiment, as shown in FIG. 16, the IC chip 1 is mounted on a carrier tape 16 in which inner lead portions and outer lead portions made of copper foil or the like are attached as a wiring pattern 16A.
TAB (Tape Automated Bonding) to attach A and 1B
It is configured according to each of the above-described examples except that it is manufactured using a technique. That is, when manufacturing a resin-sealed semiconductor device using TAB, the inner lead portion that is a part of the wiring pattern 16A of the carrier tape 16 and the IC chip 1 are used.
A and 1B are joined together via the dumps 9A and 9B, and the outer lead portion which is a part of the wiring pattern 16A of the carrier tape 16 is joined to the lead frame 17, and then the IC
By sealing the chips 1A and 1B with the mold resin 7, a resin-sealed semiconductor device can be manufactured. Therefore, according to this embodiment, the resin-sealed semiconductor device can be easily manufactured by using the TAB technique together.

Example 10. In the resin-sealed semiconductor device of this embodiment, as shown in FIG. 17, continuous inner leads 3, 3A, 3B of the lead frame are used as signal electrodes, power source electrodes, and ground electrodes of the IC chip 1A, for example. It is configured by connecting to a plurality of electrode pads 6A. That is, of the electrode pads 6A of the IC chip 1A,
The power supply electrode and the ground electrode are continuously connected to the power supply inner lead 3A and the ground inner lead 3B by the gold wire 5A, and are similarly connected to other IC chips 1B (not shown). The configuration is the same as in Example 1. Therefore, according to this embodiment, the IC chips 1A and 1B are connected to the inner leads 3,
3A and 3B can be continuously and efficiently connected, and the impedance can be reduced.

Example 11. As shown in FIG. 18, the resin-encapsulated semiconductor device of this embodiment has IC chips 1A and 1B individually die-bonded to die pads 2 and 2 of different lead frames, and IC chips 1A and 1B respectively. The inner leads 3 and 3 electrically connected to each other and the individual products individually sealed with the mold resin 7 so as to expose the non-attachment surfaces of the die pads 2 and 2 are shown in FIG. As shown in FIG. 5, the non-mounting surface side is bonded and integrated. Therefore, according to this embodiment, the half-divided resin-encapsulated semiconductor device at the previous stage of manufacturing the resin-encapsulated semiconductor device of this embodiment can be used as an independent single product, and according to Embodiment 8. It is possible to achieve the desired effect.

The present invention is not limited to the above-mentioned embodiments, and the present invention is included unless it deviates from the gist of the present invention.

[0042]

As described above, the first aspect of the present invention is provided.
According to the invention described in (1), since the plurality of IC chips of the resin-sealed semiconductor device are parallel to the outer leads, respectively, when the resin-sealed semiconductor device is mounted on the mounting substrate, the plurality of IC chips are mounted. However, both of them are perpendicular to the mounting substrate and do not face the mounting substrate, so that there is no difference in their heat radiation properties, and heat can be similarly radiated from each IC chip.

According to a second aspect of the present invention, in the invention of the first aspect, the resin-sealed semiconductor device has a plurality of IC chips arranged in parallel with the outer leads. In addition, since each IC chip is joined to the inner lead, the wire bonding step can be omitted at the time of manufacturing, and heat can be similarly radiated from each IC chip mounted on the mounting board.

Further, according to the invention described in claim 3 and claim 4 of the present invention, in the invention described in claim 1,
In the resin-encapsulated semiconductor device, a plurality of IC chips are parallel to the outer leads, and each IC chip is joined to the inner leads via the protruding electrodes, so that the wire bonding step is omitted during manufacturing. Therefore, heat can be similarly radiated from each IC chip mounted on the mounting board.

According to a fifth aspect of the present invention, in the invention according to the first aspect, the resin-sealed semiconductor device has a plurality of IC chips arranged in parallel with the outer leads. On each side of the wiring board
Since the C chips are joined, the wire bonding step can be omitted during manufacturing, and heat can be similarly radiated from each IC chip mounted on the mounting substrate.

According to the invention of claim 6 of the present invention, in the invention of claim 2 or 3, the resin-sealed semiconductor device has a plurality of IC chips for the outer leads. Are parallel and each I
Since the protruding portion having the same height is provided on the C chip or each inner lead so as to be separated from the protruding electrode, a resin-sealed semiconductor device can be manufactured without damaging the IC chips 1A and 1B during wire bonding. Can

According to a seventh aspect of the present invention, in the first aspect of the invention, the resin-sealed semiconductor device has a plurality of IC chips arranged in parallel with the outer leads. In addition, the extension part for supporting the die pad at the time of wire bonding is horizontally extended around the periphery of the die pad, so that the extension part of the die pad is supported on a stage etc. to perform wire bonding from both sides of the die pad. You can

According to an eighth aspect of the present invention, in the invention of the first aspect, the resin-sealed semiconductor device has a plurality of IC chips arranged in parallel with the outer leads. In addition, since a plurality of different IC chips and the like are separately assembled, bonded together, and sealed with the mold resin, the manufacturing process can be simplified.

According to a ninth aspect of the present invention, in the first aspect of the invention, the resin-sealed semiconductor device has a plurality of IC chips arranged in parallel with the outer leads. At the same time, the IC chip was attached to the carrier tape in which the inner lead portion and the outer lead portion were attached as a wiring pattern, and this carrier tape was joined to the lead frame and sealed with the mold resin. The resin-sealed semiconductor device can be easily manufactured.

According to a tenth aspect of the present invention, in the invention according to the first aspect, the resin-sealed semiconductor device has a plurality of IC chips arranged in parallel with the outer leads. In addition, since the continuous leads of the lead frame are joined to the plurality of electrodes of the same or different IC chips, each IC chip can be continuously and efficiently joined to each inner lead, and the impedance can be reduced.

According to an eleventh aspect of the present invention, in the invention according to the first aspect, the resin-sealed semiconductor device has a plurality of IC chips arranged in parallel with the outer leads. In addition, since the IC chips are assembled on separate lead frames to form independent single products and the individual products are bonded and integrated, the manufacturing process can be simplified.

[Brief description of drawings]

FIG. 1 is a front view showing a wiring state of an embodiment of a resin-sealed semiconductor device of the present invention.

FIG. 2 is a side view showing a wiring state of the resin-sealed semiconductor device shown in FIG.

FIG. 3 is a partial perspective view showing a wiring state by breaking a part of another embodiment of the resin-encapsulated semiconductor device of the present invention.

FIG. 4 is a front view showing a wiring state of the resin-sealed semiconductor device shown in FIG.

5 is one IC of the resin-sealed semiconductor device shown in FIG.
It is a side view showing a wiring state of a chip.

6 is a diagram corresponding to FIG. 4 showing a wiring state of the resin-sealed semiconductor device shown in FIG.

7 is a diagram corresponding to FIG. 5 showing a wiring state of the resin-sealed semiconductor device shown in FIG.

FIG. 8 is a partial perspective view showing a wiring state by breaking a part of still another embodiment of the resin-encapsulated semiconductor device of the present invention.

9 is a side view showing a wiring state of the resin-encapsulated semiconductor device shown in FIG.

FIG. 10 is a side view showing a joined state of an IC chip and an inner lead of still another embodiment of the resin-encapsulated semiconductor device of the present invention.

11 is a side view showing a state in which the IC chip and the inner lead of the resin-sealed semiconductor device shown in FIG. 3 are joined together.

FIG. 12 is a front view showing a main part of still another embodiment of the resin-encapsulated semiconductor device of the present invention.

13 is a side view showing a state in which the IC chip and the inner lead of the resin-sealed semiconductor device shown in FIG. 12 are joined together.

FIG. 14 is a side view showing a main part of a resin-encapsulated semiconductor device according to another embodiment of the present invention during assembly.

15 is a side view showing the resin-sealed semiconductor device shown in FIG.

FIG. 16 is a side view showing still another embodiment of the resin-encapsulated semiconductor device of the present invention.

FIG. 17 is an enlarged front view showing a main part of still another embodiment of the resin-encapsulated semiconductor device of the present invention.

FIG. 18 is a side view showing a main part of a resin-encapsulated semiconductor device according to another embodiment of the present invention during assembly.

19 is a side view showing the resin-sealed semiconductor device shown in FIG.

FIG. 20 is a side view showing a state in which a conventional resin-encapsulated semiconductor device is mounted on a mounting board.

[Explanation of symbols]

 1A IC chip 1B IC chip 2 Die pad 2A Extended part 3 Inner lead 3A Inner lead 3B Inner lead 4 Outer lead 7 Mold resin 9A Bump (projection electrode) 9B Bump (projection electrode) 10 Wiring pattern 11 Wiring board 12A Dummy bump (projection part) ) 16 carrier tape 16A wiring pattern

Claims (11)

[Claims] 1. A resin-sealed semiconductor device having an IC chip on each side of a die pad of a lead frame, and a plurality of inner leads and outer leads electrically connected to each IC chip. A resin-encapsulated semiconductor device, characterized in that an IC chip is resin-encapsulated so as to be parallel to the outer leads, respectively. 2. The resin encapsulation according to claim 1, wherein a plurality of protruding electrodes are provided on the surface of each IC chip, and each IC chip is bonded to the inner lead via these protruding electrodes. Static semiconductor device. 3. The resin-sealed mold according to claim 1, wherein bump electrodes are provided on the plurality of inner leads, and the IC chips are bonded to the inner leads through the bump electrodes. Semiconductor device. 4. The resin encapsulation according to claim 3, wherein bump electrodes are provided on both surfaces of the plurality of inner leads, and the IC chips are bonded to the inner leads through the bump electrodes. Static semiconductor device. 5. The respective IC chips are electrically joined to wiring patterns on both sides of a wiring board made of silicon or ceramics having wiring patterns formed on both sides, and the outer leads are joined to the wiring board. The resin-encapsulated semiconductor device according to claim 1. 6. The IC chip or each inner lead is provided with a protrusion having the same height as the protrusion electrode, which is separated from the protrusion electrode. Resin-sealed semiconductor device. 7. The resin-encapsulated semiconductor device according to claim 1, wherein an extending portion for supporting the die pad at the time of wire bonding is extended in the horizontal direction at the periphery of the die pad. 8. A state in which IC chips individually die-bonded to die pads of different lead frames and inner leads electrically connected to the respective IC chips are provided, and the lead frames are bonded and integrated. The resin-encapsulated semiconductor device according to claim 1, wherein the resin-encapsulated semiconductor device is encapsulated with a mold resin. 9. An IC chip is attached to a carrier tape having an inner lead portion and an outer lead portion bonded together as a wiring pattern, the carrier tape is joined to a lead frame and sealed with a molding resin. 1. The resin-encapsulated semiconductor device according to 1. 10. The resin-encapsulated semiconductor device according to claim 1, wherein continuous leads of the lead frame are bonded to a plurality of electrodes of the same or different IC chips. 11. An IC chip die-bonded individually to a die pad of a different lead frame, and each IC
Inner leads electrically connected to the chip respectively, and a single product individually sealed by molding resin so as to expose the non-attachment surface of the die pad, these single products on the non-attachment surface side The resin-encapsulated semiconductor device according to claim 1, wherein the resin-encapsulated semiconductor device is bonded and integrated.