JPH06301217A - Developer for photosensitive polyimide precursor - Google Patents

Developer for photosensitive polyimide precursor

Info

Publication number
JPH06301217A
JPH06301217A JP9013093A JP9013093A JPH06301217A JP H06301217 A JPH06301217 A JP H06301217A JP 9013093 A JP9013093 A JP 9013093A JP 9013093 A JP9013093 A JP 9013093A JP H06301217 A JPH06301217 A JP H06301217A
Authority
JP
Japan
Prior art keywords
polyimide precursor
photosensitive polyimide
development
developer
soln
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9013093A
Other languages
Japanese (ja)
Other versions
JP3303416B2 (en
Inventor
Kazutaka Kusano
一孝 草野
Masuichi Eguchi
益市 江口
Masaya Asano
昌也 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP9013093A priority Critical patent/JP3303416B2/en
Priority to PCT/JP1994/000104 priority patent/WO1994018607A1/en
Priority to US08/692,337 priority patent/US5614354A/en
Priority to EP94905210A priority patent/EP0634698A4/en
Priority to KR1019940703469A priority patent/KR950701093A/en
Publication of JPH06301217A publication Critical patent/JPH06301217A/en
Application granted granted Critical
Publication of JP3303416B2 publication Critical patent/JP3303416B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To control the developing rate during development and to obtain a positive fine polyimide pattern with likelihood by preparing an alkali soln. containing amino alcohols and other alkali. CONSTITUTION:This developer is an alkali soln. containing 0.5-30wt.% aminoalcohols and other alkali except for aminoalcohols. The aminoalcohols in the developer are pereferably, monoethanolamine, diethanolamine, and isopropanolamine. The alkali except for aminoalchols is preferably tetramethylammonium hydroxide soln. tetraethylammonium hydroxide soln., choline soln., and these alkalis are used in a single or mixed form. Further, a potassium chloride soln., lithium chloride soln. etc., may be used as a controlling agent. This developer may contain an additive component as far as the effect is not decreased.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電子材料として有用な
感光性ポリイミド前駆体組成物の現像液に関する。更に
詳しくは、ポジ型の感光性ポリイミド前駆体組成物の現
像液に関する。
FIELD OF THE INVENTION The present invention relates to a developer for a photosensitive polyimide precursor composition useful as an electronic material. More specifically, it relates to a developer for a positive photosensitive polyimide precursor composition.

【0002】[0002]

【従来の技術】従来、感光性ポリイミド前駆体の現像液
としては、N−メチルピロリドンなどの双極性非プロト
ン性溶剤に貧溶媒としてメタノールなどの低級アルコー
ルや水を加えたもの(例えば、特開昭58−66940
号公報、特開昭58−223149号公報、特開昭62
−127738号公報)やN−メチルピロリドンなどの
双極性非プロトン性溶剤にキシレンなどの芳香族炭化水
素を加えたものが使用されている(例えば、特開平2−
255898号公報)。
2. Description of the Related Art Conventionally, as a developing solution for a photosensitive polyimide precursor, a dipolar aprotic solvent such as N-methylpyrrolidone added with a lower alcohol such as methanol or water as a poor solvent (see, for example, Japanese Unexamined Patent Publication 58-66940
JP, JP-A-58-223149, JP-A-62.
No. 127,738) or a dipolar aprotic solvent such as N-methylpyrrolidone to which an aromatic hydrocarbon such as xylene is added (for example, JP-A-2-
255898).

【0003】しかしながら、かかるこれらの現像液は、
いずれも露光した部分が現像により残るネガ型の感光性
ポリイミド前駆体用の現像液であった。これらの現像液
に用いられるネガ型の感光性ポリイミド前駆体として
は、テトラカルボン酸とジアミンを組み合わせて双極性
非プロトン性溶剤中で一般的に製造されるポリイミド前
駆体のワニスにメタクリル基などの感光基を有している
アミノ化合物を混合したもの(例えば特公昭59−52
822号公報)、光により2量化または重合可能な基を
エステル結合で導入もの(例えば米国特許−39575
12号明細書)、N−メチロールアクリドアミド化合物
をポリイミド前駆体のワニスに混合したもの(例えば高
分子学会予稿集p807、1990年)、あるいはアク
リルモノマーをポリイミド前駆体のワニスに混合したも
の(例えば特開平2−50161号公報)などが挙げら
れる。
However, these developing solutions are
All were developers for a negative photosensitive polyimide precursor in which the exposed portion remained after development. As the negative photosensitive polyimide precursor used in these developers, a methacrylic group or the like is added to the varnish of the polyimide precursor generally produced in a dipolar aprotic solvent by combining tetracarboxylic acid and diamine. A mixture of amino compounds having a photosensitive group (for example, Japanese Patent Publication No. 59-52).
822), in which a group dimerizable or polymerizable by light is introduced by an ester bond (for example, US Pat.
No. 12), a mixture of a polyimide precursor varnish with an N-methylol amide compound (for example, Proceedings of the Polymer Society of Japan p807, 1990), or a mixture of an acrylic monomer with a polyimide precursor varnish ( For example, Japanese Patent Application Laid-Open No. 2-50161) can be cited.

【0004】近年、ポリイミド皮膜を半導体素子の保護
膜や高密度実装用多層配線の層間絶縁膜として用いた場
合は、歩留まりの低下や信頼性が低下する点、露光時に
使用するマスクなどにダストなどが付着しているとその
部分が欠陥となり、ポリイミド皮膜にピンホールが形成
される点などから、ポジ型の感光性ポリイミド前駆体が
開発されている。また、ポジ型の感光性ポリイミド前駆
体としては、ポリアミド酸にエステル基で光分解性の感
光基を導入し、露光、現像によりポジ型のパターンを形
成する方法(例えば、特開平1−61747号公報)、
特定の構造のポリアミド酸に特定の構造のナフトキノン
ジアジド化合物を添加し、露光後に特定の温度範囲で熱
処理し、ポジ型のパターンを形成する方法(例えば、高
分子学会予稿集,40巻,3号,821(199
1))、化学線感応型ポリイミド前駆体の皮膜を露光
し、露光後未露光部が露光部より硬化度が高くなる処理
を施し、露光部を除去し、ポジ型のパターンを形成する
方法などが知られているが、これら、ポジ型の感光性ポ
リイミド前駆体を現像するために、該双極性非プロトン
性溶剤を主成分とする現像液を用いても現像は不可能で
あった。
In recent years, when a polyimide film is used as a protective film of a semiconductor element or an interlayer insulating film of a multi-layer wiring for high-density packaging, yield and reliability are lowered, and dust is used as a mask used during exposure. The positive type photosensitive polyimide precursor has been developed because, when such a substance is attached, that portion becomes a defect and a pinhole is formed in the polyimide film. Further, as a positive photosensitive polyimide precursor, a method of introducing a photodegradable photosensitive group into a polyamic acid with an ester group, and forming a positive pattern by exposure and development (for example, JP-A-1-61747). Gazette),
A method in which a naphthoquinonediazide compound having a specific structure is added to a polyamic acid having a specific structure, and heat treatment is performed after exposure in a specific temperature range to form a positive pattern (for example, Proceedings of the Polymer Society of Japan, Vol. 40, No. 3). , 821 (199
1)), a method of exposing the film of the actinic radiation-sensitive polyimide precursor, performing a treatment after exposure to make the unexposed portion have a higher degree of curing than the exposed portion, and removing the exposed portion to form a positive pattern However, even if a developing solution containing the dipolar aprotic solvent as a main component is used for developing these positive photosensitive polyimide precursors, the development is impossible.

【0005】そのため、これらの現像には、ポジ型のフ
ォトレジストに用いられるようなアルカリ水溶液(たと
えば、東京応化(株)製 NMD−3)が用いられてい
るが、該アルカリ水溶液では、本来、溶解すべき露光部
の溶解が著しく遅くなるという欠点があった。また、ポ
ジ型の感光性ポリイミド前駆体の種類、膜厚、乾燥条
件、露光条件によっては、現像時間が大きく変化し、プ
ロセスが不安定性になるといった問題があった。
Therefore, an alkaline aqueous solution (for example, NMD-3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) as used for a positive type photoresist is used for these developments. There is a drawback that the dissolution of the exposed area to be dissolved becomes extremely slow. Further, depending on the type of the positive photosensitive polyimide precursor, the film thickness, the drying conditions, and the exposure conditions, there is a problem that the development time changes greatly and the process becomes unstable.

【0006】[0006]

【発明が解決しようとする課題】本発明は、かかる従来
技術の諸欠点に鑑み創案されたもので、その目的は、ポ
ジ型の感光性ポリイミド前駆体の現像プロセスを安定
し、かつ良好なポジ型のパターンを形成するポジ型感光
性ポリイミド前駆体用の現像液を提供することにある。
The present invention was devised in view of the drawbacks of the prior art, and its purpose is to stabilize the development process of a positive photosensitive polyimide precursor and to obtain a good positive It is to provide a developer for a positive photosensitive polyimide precursor that forms a pattern of a mold.

【0007】[0007]

【課題を解決するための手段】かかる本発明の目的は、
アミノアルコール類を0.5〜30重量%、およびアミ
ノアルコール類以外のアルカリを含有するアルカリ水溶
液であることを特徴とする感光性ポリイミド前駆体用現
像液により達成される。
The object of the present invention is as follows.
This is achieved by a developing solution for a photosensitive polyimide precursor, which is an alkaline aqueous solution containing 0.5 to 30% by weight of amino alcohols and an alkali other than amino alcohols.

【0008】本発明の現像液に含有されるアミノアルコ
ール類としては、モノエタノールアミン、ジエタノール
アミン、トリエタノールアミン、イソプロパノールアミ
ン、ジメチルアミノエタノール、トリイソプロパノール
アミン、2−ヒドロキシメチルアミノエタノール、N−
イソブチルジエタノールアミン、2−アミノシクロヘキ
サノール2−アミノメチルシクロアルカノールなどが挙
げられるが、もちろんこれらに限定されない。好ましく
は、モノエタノールアミン、ジエタノールアミン、イソ
プロパノールアミンである。
The amino alcohols contained in the developer of the present invention include monoethanolamine, diethanolamine, triethanolamine, isopropanolamine, dimethylaminoethanol, triisopropanolamine, 2-hydroxymethylaminoethanol, N-.
Examples thereof include isobutyldiethanolamine and 2-aminocyclohexanol 2-aminomethylcycloalkanol, but the present invention is not limited thereto. Preferred are monoethanolamine, diethanolamine, and isopropanolamine.

【0009】該アミノアルコール類の含有量は、現像液
中0.5〜30重量%とする。好ましくは、1.5〜2
0重量%である。該含有量が0.5重量%より少ない場
合は、ポジ型の感光性ポリイミド前駆体の種類、乾燥条
件、露光条件によって、現像時間が大きく変化し、プロ
セスが不安定性になる。特に、感光性ポリイミド前駆体
の皮膜の膜厚が厚くなると、現像が進みにくく、現像時
間が著しく長くなる問題がある。また、30重量%を越
えると現像時間が速くなりすぎる欠点があり、現像時間
のコントロールが困難になる問題を生じる。
The content of the amino alcohol is 0.5 to 30% by weight in the developer. Preferably 1.5-2
It is 0% by weight. When the content is less than 0.5% by weight, the development time is greatly changed depending on the type of positive photosensitive polyimide precursor, drying conditions and exposure conditions, and the process becomes unstable. In particular, when the film thickness of the photosensitive polyimide precursor film becomes thick, it is difficult to proceed with the development, and there is a problem that the development time becomes extremely long. On the other hand, if it exceeds 30% by weight, there is a disadvantage that the developing time becomes too fast, which makes it difficult to control the developing time.

【0010】アミノアルコール類以外のアルカリとして
は、テトラメチルアンモニウムヒドロキシド水溶液、テ
トラエチルアンモニウムヒドロキシド水溶液、コリン水
溶液、水酸化ナトリウム水溶液、水酸化カリウム水溶
液、水酸化バリウム水溶液、水酸化リチウム水溶液、炭
酸ナトリウム水溶液、炭酸カリウム水溶液、炭酸バリウ
ム水溶液、炭酸リチウム水溶液、塩化カリウム水溶液、
塩化リチウム水溶液などが挙げられる。好ましくは、テ
トラメチルアンモニウムヒドロキシド水溶液、テトラエ
チルアンモニウムヒドロキシド水溶液、コリン水溶液で
ある。これらのアルカリは、一種または二種以上混合し
て用いられる。
Examples of alkalis other than amino alcohols include tetramethylammonium hydroxide aqueous solution, tetraethylammonium hydroxide aqueous solution, choline aqueous solution, sodium hydroxide aqueous solution, potassium hydroxide aqueous solution, barium hydroxide aqueous solution, lithium hydroxide aqueous solution, sodium carbonate. Aqueous solution, potassium carbonate solution, barium carbonate solution, lithium carbonate solution, potassium chloride solution,
Examples thereof include aqueous lithium chloride solution. Preferred are tetramethylammonium hydroxide aqueous solution, tetraethylammonium hydroxide aqueous solution, and choline aqueous solution. These alkalis are used alone or in combination of two or more.

【0011】現像液中のアミノアルコール類以外のアル
カリの濃度は、0.5〜15重量%が好ましい。更に好
ましくは、1.5〜10重量%である。該濃度が0.5
重量%より少ない場合、感光性ポリイミド前駆体の現像
がほとんど進行せず、15重量%を越えると、該現像が
速くなり、現像時間のコントロールが困難になる。ま
た、本来、残存すべき未露光部までも溶解し、良好なポ
ジ型のパターン形成が困難になる。
The concentration of alkali other than amino alcohols in the developer is preferably 0.5 to 15% by weight. More preferably, it is 1.5 to 10% by weight. The concentration is 0.5
When it is less than 15% by weight, the development of the photosensitive polyimide precursor hardly progresses, and when it exceeds 15% by weight, the development becomes faster and it becomes difficult to control the development time. In addition, even the unexposed areas that should originally remain are dissolved, making it difficult to form a good positive pattern.

【0012】本発明にかかる現像液は、本発明の効果を
損なわない範囲で、添加成分を含んでいてもよい。
The developer according to the present invention may contain additional components as long as the effects of the present invention are not impaired.

【0013】本発明の現像液で、現像可能なポジ型の感
光性ポリイミド前駆体としては、ポリアミド酸にエステ
ル基で光分解性の感光基を導入し、露光、現像によりポ
ジ型のパターンを形成するもの(例えば、特開平1−6
1747号公報)、特定の構造のポリアミド酸に特定の
構造のナフトキノンジアジド化合物を添加し、露光後に
特定の温度範囲で熱処理し、ポジ型のパターンを形成す
るもの(例えば、高分子学会予稿集,40巻,3号,8
21(1991))、化学線感応型ポリイミド前駆体の
皮膜を露光し、露光後未露光部が露光部より硬化度が高
くなる処理を施し、露光部を除去し、ポジ型のパターン
を形成するものなどが挙げられる。
As a positive photosensitive polyimide precursor that can be developed with the developer of the present invention, a photodegradable photosensitive group is introduced into a polyamic acid by an ester group, and a positive pattern is formed by exposure and development. (For example, Japanese Patent Laid-Open No. 1-6
1747), a naphthoquinonediazide compound having a specific structure is added to a polyamic acid having a specific structure, and heat-treated at a specific temperature range after exposure to form a positive pattern (for example, Proceedings of the Polymer Society of Japan, Volume 40, Issue 3, 8
21 (1991)), the film of the actinic radiation-sensitive polyimide precursor is exposed to light, and after exposure, the unexposed portion is treated to have a higher degree of curing than the exposed portion, and the exposed portion is removed to form a positive pattern. Things are included.

【0014】ポジ型のパターン形成は、例えば次のよう
に行われる。まず、感光性ポリイミド前駆体のワニスを
シリコンウエハなどの基板の上にスピンコートなど手法
で塗布を行い、ホットプレートやオーブンの中で溶剤を
飛散させ、クロム製のフォトマスクを介して所定量の露
光を行う。その後、ホットプレートやオーブンの中で脱
水ベーク等の熱処理を施し、つづいて現像を行う。
The positive type pattern is formed, for example, as follows. First, a varnish of a photosensitive polyimide precursor is applied onto a substrate such as a silicon wafer by a method such as spin coating, the solvent is scattered in a hot plate or an oven, and a predetermined amount of the varnish is applied through a photomask made of chromium. Expose. After that, heat treatment such as dehydration baking is performed in a hot plate or an oven, followed by development.

【0015】現像方法としては、スピンナ上にシリコン
ウエハなどの基板を固定して、毎分100回転から30
00回転程度で回転を行いながら、現像液をスプレーで
噴霧するスプレー法、スピンナ上にシリコンウエハなど
の基板を固定して、基板の上に現像液を盛り、静置して
現像を行うパドル現像、現像液の槽に基板を浸漬する浸
漬現像、浸漬現像で超音波を当てる超音波印加浸漬現像
などが挙げられるが、どの様な方式でも現像を行うこと
ができる。
As a developing method, a substrate such as a silicon wafer is fixed on a spinner, and 100 rpm to 30 rpm
A spray method in which the developing solution is sprayed while rotating about 00 rotations, a substrate such as a silicon wafer is fixed on a spinner, the developing solution is placed on the substrate, and the paddle development is performed by allowing the developing solution to stand still. Examples of the method include immersion development in which a substrate is immersed in a bath of a developing solution, ultrasonic application immersion development in which ultrasonic waves are applied in immersion development, and the development can be performed by any method.

【0016】現像後、現像液を取り除くために通常リン
ス液で洗浄される。リンス液としては、水、メチルアル
コール、エチルアルコール、イソプロピルアルコール、
トルエン、キシレン、アセトン、メチルエチルケトン、
メチルセロソルブ、エチルセロソルブなどが挙げられ
る。ついで、ホットプレートやオーブンで、100〜4
50℃程度の熱処理を行いポリイミドに転換することで
最終的な製品が得られる。
After the development, it is usually washed with a rinse liquid to remove the developer. As the rinse liquid, water, methyl alcohol, ethyl alcohol, isopropyl alcohol,
Toluene, xylene, acetone, methyl ethyl ketone,
Examples thereof include methyl cellosolve and ethyl cellosolve. Then, on a hot plate or oven, 100-4
A final product is obtained by performing heat treatment at about 50 ° C. and converting to polyimide.

【0017】[0017]

【実施例】以下、実施例に基いて本発明を具体的に説明
するが、本発明はこれらに限定されない。
EXAMPLES The present invention will be specifically described below based on examples, but the present invention is not limited thereto.

【0018】参考例1 感光性ポリイミド前駆体組成物(A)の合成 3,3´,4,4´−ベンゾフェノヘノンテトラカルボ
ン酸二無水物80.55g、ピロメリット酸二無水物5
4.53gをエタノール2.3g,N−メチル−2−ピ
ロリドン549gと共に70℃で3時間反応させた。そ
の後、20℃に冷却し、4,4´−ジアミノジフェニル
エーテル95.1gおよびビス(3−アミノプロピル)
テトラメチルジシロキサン6.2gを添加し、更に60
℃で3時間反応させ、粘度122ポアズ(25℃)のポ
リマ溶液を得た。この溶液にメタクリル酸ジメチルアミ
ノエチル157.3g(ポリマ中のカルボキシル基と当
量)、3−フェニル−5−イソオキサゾロン42.27
g、3,3´−カルボニルビス(ジエチルアミノクマロ
リン)2.36gおよびN−メチル−2−ピロリドン1
90gを添加し感光性ポリイミド前駆体組成物(A)を
得た。
Reference Example 1 Synthesis of Photosensitive Polyimide Precursor Composition (A) 3,3 ', 4,4'-benzophenenonone tetracarboxylic acid dianhydride 80.55 g, pyromellitic dianhydride 5
4.53 g was reacted with 2.3 g of ethanol and 549 g of N-methyl-2-pyrrolidone at 70 ° C. for 3 hours. Then, it was cooled to 20 ° C., and 95.1 g of 4,4′-diaminodiphenyl ether and bis (3-aminopropyl)
Add 6.2 g of tetramethyldisiloxane and add another 60
The reaction was carried out at 0 ° C for 3 hours to obtain a polymer solution having a viscosity of 122 poise (25 ° C). 157.3 g of dimethylaminoethyl methacrylate (equivalent to the carboxyl group in the polymer), 3-phenyl-5-isoxazolone 42.27 were added to this solution.
g, 3,3'-carbonylbis (diethylaminocoumaroline) 2.36 g and N-methyl-2-pyrrolidone 1
90 g was added to obtain a photosensitive polyimide precursor composition (A).

【0019】参考例2 感光性ポリイミド前駆体組成物(B)の合成 3,3´,4,4´−ベンゾフェノヘノンテトラカルボ
ン酸二無水物161.1gをエタノール2.3g,N−
メチル−2−ピロリドン549gと共に70℃で3時間
反応させた。その後、20℃に冷却し、4,4´−ジア
ミノジフェニルエーテル95.1gおよびビス(3−ア
ミノプロピル)テトラメチルジシロキサン6.2gを添
加し、更に60℃で3時間反応させ、粘度100ポアズ
(25℃)のポリマ溶液を得た。この溶液にメタクリル
酸ジメチルアミノエチル157.3g(ポリマ中のカル
ボキシル基と当量)、3−フェニル−5−イソオキサゾ
ロン42.27g、3,3´−カルボニルビス(ジエチ
ルアミノクマロリン)2.62gおよびN−メチル−2
−ピロリドン190gを添加し感光性ポリイミド前駆体
組成物(B)を得た。
Reference Example 2 Synthesis of Photosensitive Polyimide Precursor Composition (B) 161.1 g of 3,3 ', 4,4'-benzophenenonone tetracarboxylic dianhydride was added to 2.3 g of ethanol and N-
The reaction was carried out at 70 ° C. for 3 hours together with 549 g of methyl-2-pyrrolidone. Then, the mixture was cooled to 20 ° C., 95.1 g of 4,4′-diaminodiphenyl ether and 6.2 g of bis (3-aminopropyl) tetramethyldisiloxane were added, and the mixture was further reacted at 60 ° C. for 3 hours to give a viscosity of 100 poise ( A polymer solution at 25 ° C.) was obtained. To this solution were added 157.3 g of dimethylaminoethyl methacrylate (equivalent to the carboxyl group in the polymer), 42.27 g of 3-phenyl-5-isoxazolone, 2.62 g of 3,3'-carbonylbis (diethylaminocoumaroline) and N. -Methyl-2
-Pyrrolidone (190 g) was added to obtain a photosensitive polyimide precursor composition (B).

【0020】参考例3 感光性ポリイミド前駆体組成物(C)の合成 3,3´,4,4´−ビフェニルテトラカルボン酸二無
水物147.1gをエタノール4.6g,N−メチル−
2−ピロリドン599gと共に70℃で3時間反応させ
た。その後、20℃に冷却し、パラフェニレンジアミン
54.05gを添加し、更に60℃で3時間反応させ、
粘度500ポアズ(25℃)のポリマ溶液を得た。この
溶液にメタクリル酸ジメチルアミノエチル185.3g
(ポリマ中のカルボキシル基と当量)、3−フェニル−
5−イソオキサゾロン30.17g、3,3´−カルボ
ニルビス(ジエチルアミノクマロリン)2.62gおよ
びN−メチル−2−ピロリドン250gを添加し感光性
ポリイミド前駆体組成物(C)を得た。
Reference Example 3 Synthesis of Photosensitive Polyimide Precursor Composition (C) 147.1 g of 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride was added to 4.6 g of ethanol and N-methyl-
The reaction was carried out with 599 g of 2-pyrrolidone at 70 ° C. for 3 hours. Then, the mixture was cooled to 20 ° C., 54.05 g of paraphenylenediamine was added, and the mixture was further reacted at 60 ° C. for 3 hours,
A polymer solution having a viscosity of 500 poise (25 ° C.) was obtained. 185.3 g of dimethylaminoethyl methacrylate in this solution
(Equivalent to carboxyl group in polymer), 3-phenyl-
30.17 g of 5-isoxazolone, 2.62 g of 3,3′-carbonylbis (diethylaminocoumaroline) and 250 g of N-methyl-2-pyrrolidone were added to obtain a photosensitive polyimide precursor composition (C).

【0021】実施例1 テトラメチルアンモニウムヒドロキシドの濃度が2.5
重量%である該水溶液中に、モノエタノールアミンを1
5重量%含有した感光性ポリイミド前駆体用現像液を作
製した。
Example 1 The concentration of tetramethylammonium hydroxide was 2.5.
1% of monoethanolamine was added to the aqueous solution, which was wt%.
A developer for a photosensitive polyimide precursor containing 5% by weight was prepared.

【0022】次に、4インチのシリコンウエハー上に、
参考例1で得られた感光性ポリイミド前駆体組成物
(A)をスピンコートし、オーブン中で60℃で30分
の乾燥を行った。この時の膜厚は、6.4μmであっ
た。その後に、キャノン(株)製コンタクトアライナー
PLA−501Fを用い、クロム製のフォトマスクを介
して、365nmの波長で200mJ/cm2 の露光を
行った。露光後、ホットプレートで、140℃で3分熱
処理を施した。この試料を該現像液中で浸漬し、水でリ
ンス後、窒素ブローして乾燥した。
Next, on a 4-inch silicon wafer,
The photosensitive polyimide precursor composition (A) obtained in Reference Example 1 was spin-coated and dried in an oven at 60 ° C. for 30 minutes. The film thickness at this time was 6.4 μm. Then, using a contact aligner PLA-501F manufactured by Canon Inc., light exposure of 200 mJ / cm 2 was performed at a wavelength of 365 nm through a photomask made of chromium. After the exposure, heat treatment was performed on a hot plate at 140 ° C. for 3 minutes. This sample was immersed in the developer, rinsed with water, then blown with nitrogen and dried.

【0023】現像を3分行った結果を光学顕微鏡で観察
すると、10μmのスルホール部が完全に解像し、ウエ
ハの中央部から周辺部まで一様な解像をしていた。ま
た、現像後の膜厚は、5.6μmであり現像前の膜厚に
対し、膜厚保持率は87.5%と良好であった。
When the result of development for 3 minutes was observed with an optical microscope, a 10 μm through-hole portion was completely resolved, and uniform resolution was achieved from the central portion to the peripheral portion of the wafer. Further, the film thickness after development was 5.6 μm, and the film thickness retention rate was 87.5%, which was good with respect to the film thickness before development.

【0024】実施例2 コリンの濃度が5重量%である該水溶液中に、モノエタ
ノールアミンを15重量%含有した感光性ポリイミド前
駆体用現像液を用いた他は、実施例1と全く同じ条件で
パターン加工を行った。
Example 2 Exactly the same conditions as in Example 1 except that a developing solution for a photosensitive polyimide precursor containing 15% by weight of monoethanolamine was used in the aqueous solution having a choline concentration of 5% by weight. Pattern processing was performed.

【0025】現像を3分行った結果を光学顕微鏡で観察
すると、10μmのスルホール部が完全に解像し、ウエ
ハの中央部から周辺部まで一様な解像をしていた。ま
た、現像後の膜厚は、5.9μmであり現像前の膜厚に
対し、膜厚保持率は92%と良好であった。
When the result of development for 3 minutes was observed with an optical microscope, a 10 μm through-hole portion was completely resolved, and uniform resolution was achieved from the central portion to the peripheral portion of the wafer. Further, the film thickness after development was 5.9 μm, and the film thickness retention ratio was as good as 92% with respect to the film thickness before development.

【0026】実施例3 参考例1で得られた感光性ポリイミド前駆体組成物
(A)の塗布、乾燥後の膜厚を12.3μmとした他
は、実施例1と全く同じ条件でパターン加工を行った。
Example 3 Pattern processing was carried out under exactly the same conditions as in Example 1 except that the thickness of the photosensitive polyimide precursor composition (A) obtained in Reference Example 1 after coating and drying was 12.3 μm. I went.

【0027】現像を4分行った結果を光学顕微鏡で観察
すると、20μmのスルホール部が完全に解像し、ウエ
ハの中央部から周辺部まで一様な解像をしていた。ま
た、現像後の膜厚は、11.5μmであり現像前の膜厚
に対し、膜厚保持率は94%と良好であった。
When the result of development for 4 minutes was observed with an optical microscope, a 20 μm through hole portion was completely resolved, and uniform resolution was achieved from the central portion to the peripheral portion of the wafer. Further, the film thickness after development was 11.5 μm, and the film thickness retention ratio was 94%, which was good with respect to the film thickness before development.

【0028】実施例4 参考例2で得られた感光性ポリイミド前駆体組成物
(B)を用いた他は、実施例1と全く同じ条件でパター
ン加工を行った。
Example 4 Pattern processing was carried out under exactly the same conditions as in Example 1 except that the photosensitive polyimide precursor composition (B) obtained in Reference Example 2 was used.

【0029】現像を3分行った結果を光学顕微鏡で観察
すると、10μmのスルホール部が完全に解像し、ウエ
ハの中央部から周辺部まで一様な解像をしていた。ま
た、現像後の膜厚は、5.5μmであり現像前の膜厚に
対し、膜厚保持率は86%と良好であった。
When the result of development for 3 minutes was observed with an optical microscope, a 10 μm through-hole portion was completely resolved, and uniform resolution was achieved from the central portion to the peripheral portion of the wafer. The film thickness after development was 5.5 μm, and the film thickness retention ratio was 86%, which was good with respect to the film thickness before development.

【0030】実施例5 参考例3で得られた感光性ポリイミド前駆体組成物
(C)を用いた他は、実施例1と全く同じ条件でパター
ン加工を行った。
Example 5 Pattern processing was carried out under exactly the same conditions as in Example 1 except that the photosensitive polyimide precursor composition (C) obtained in Reference Example 3 was used.

【0031】現像を2分行った結果を光学顕微鏡で観察
すると、10μmのスルホール部が完全に解像し、ウエ
ハの中央部から周辺部まで一様な解像をしていた。ま
た、現像後の膜厚は、5.5μmであり現像前の膜厚に
対し、膜厚保持率は86%と良好であった。
When the result of development for 2 minutes was observed with an optical microscope, a 10 μm through hole portion was completely resolved, and uniform resolution was achieved from the central portion to the peripheral portion of the wafer. The film thickness after development was 5.5 μm, and the film thickness retention ratio was 86%, which was good with respect to the film thickness before development.

【0032】比較例1 感光性ポリイミド前駆体用現像液として、ポジ型のフォ
トレジストに用いられるアルカリ水溶液(東京応化
(株)製 NMD−3)を用いた他は、実施例1と全く
同じ条件でパターン加工を行ったところ、15分該現像
液に浸漬しても現像が進行せず、感光性ポリイミド前駆
体のパターンが得られなかった。
Comparative Example 1 Exactly the same conditions as in Example 1 except that an alkaline aqueous solution (NMD-3 manufactured by Tokyo Ohka Co., Ltd.) used for a positive photoresist was used as a developing solution for a photosensitive polyimide precursor. When the pattern processing was performed with, the development did not proceed even when immersed in the developing solution for 15 minutes, and the pattern of the photosensitive polyimide precursor could not be obtained.

【0033】比較例2 テトラメチルアンモニウムヒドロキシドの濃度が2.5
重量%である該水溶液を感光性ポリイミド前駆体用現像
液として用いた他は、実施例1と全く同じ条件でパター
ン加工を行ったところ、15分該現像液に浸漬しても現
像が進行せず、感光性ポリイミド前駆体のパターンが得
られなかった。
Comparative Example 2 The concentration of tetramethylammonium hydroxide was 2.5.
The patterning was performed under exactly the same conditions as in Example 1 except that the aqueous solution (wt%) was used as the developing solution for the photosensitive polyimide precursor, and the development proceeded even when immersed in the developing solution for 15 minutes. No pattern of the photosensitive polyimide precursor was obtained.

【0034】比較例3 テトラメチルアンモニウムヒドロキシドの濃度が17重
量%である該水溶液を感光性ポリイミド前駆体用現像液
として用いた他は、実施例1と全く同じ条件でパターン
加工を行ったところ、現像液に浸漬後、数秒間で露光部
と未露光部が共に溶解し、感光性ポリイミド前駆体のパ
ターンが得られなかった。
Comparative Example 3 A pattern was processed under exactly the same conditions as in Example 1 except that the aqueous solution containing tetramethylammonium hydroxide at a concentration of 17% by weight was used as a developing solution for a photosensitive polyimide precursor. After being immersed in the developing solution, both the exposed and unexposed areas were dissolved within a few seconds, and the pattern of the photosensitive polyimide precursor could not be obtained.

【0035】比較例4 テトラメチルアンモニウムヒドロキシドの濃度が、2.
5重量%である該水溶液中に、モノエタノールアミン3
5重量%を混合した感光性ポリイミド前駆体用現像液を
用いた他は、実施例1と全く同じ条件でパターン加工を
行った。
Comparative Example 4 The concentration of tetramethylammonium hydroxide was 2.
Monoethanolamine 3 was added to the 5% by weight aqueous solution.
Pattern processing was performed under exactly the same conditions as in Example 1 except that a developing solution for a photosensitive polyimide precursor mixed with 5% by weight was used.

【0036】現像を2分行った結果を光学顕微鏡で観察
すると、スルホール部のパターンが広がり、オーバー現
像であった。また、現像後の膜厚は、2.5μmであり
現像前の膜厚に対し、膜厚保持率は40%であった。
When the result of development for 2 minutes was observed with an optical microscope, the pattern of the through-holes spread and it was over-development. The film thickness after development was 2.5 μm, and the film thickness retention ratio was 40% with respect to the film thickness before development.

【0037】[0037]

【発明の効果】本発明の現像液を用いることによって、
ポジ型の感光性ポリイミドの加工において、現像時の現
像速度を制御でき、かつポジ型の極めて微細なポリイミ
ドパターンを裕度をもって、得ることができる。
By using the developer of the present invention,
In the processing of a positive photosensitive polyimide, the development speed at the time of development can be controlled, and a positive fine polyimide pattern can be obtained with a margin.

─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成6年3月2日[Submission date] March 2, 1994

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0010[Correction target item name] 0010

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0010】アミノアルコール類以外のアルカリとして
は、テトラメチルアンモニウムヒドロキシド水溶液、テ
トラエチルアンモニウムヒドロキシド水溶液、コリン水
溶液、水酸化ナトリウム水溶液、水酸化カリウム水溶
液、水酸化バリウム水溶液、水酸化リチウム水溶液、炭
酸ナトリウム水溶液、炭酸カリウム水溶液、炭酸リチウ
ム水溶液などが挙げられる。好ましくは、テトラメチル
アンモニウムヒドロキシド水溶液、テトラエチルアンモ
ニウムヒドロキシド水溶液、コリン水溶液である。これ
らのアルカリは、一種または二種以上混合して用いられ
る。また、塩化カリウム水溶液、塩化リチウム水溶液な
どを調整剤として用いてもよい。
Examples of alkalis other than amino alcohols include tetramethylammonium hydroxide aqueous solution, tetraethylammonium hydroxide aqueous solution, choline aqueous solution, sodium hydroxide aqueous solution, potassium hydroxide aqueous solution, barium hydroxide aqueous solution, lithium hydroxide aqueous solution, sodium carbonate. aqueous, aqueous potassium carbonate, etc. lithium carbonated aqueous solution and the like. Preferred are tetramethylammonium hydroxide aqueous solution, tetraethylammonium hydroxide aqueous solution, and choline aqueous solution. These alkalis are used alone or in combination of two or more. Also, do not use potassium chloride solution or lithium chloride solution.
Any may be used as a regulator.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】アミノアルコール類を0.5〜30重量
%、およびアミノアルコール類以外のアルカリを含有す
るアルカリ水溶液であることを特徴とする感光性ポリイ
ミド前駆体用現像液。
1. A developing solution for a photosensitive polyimide precursor, which is an aqueous alkaline solution containing 0.5 to 30% by weight of amino alcohols and an alkali other than amino alcohols.
【請求項2】アミノアルコール類以外のアルカリとし
て、テトラメチルアンモニウムヒドロキシド水溶液、テ
トラエチルアンモニウムヒドロキシド水溶液およびコリ
ン水溶液の群から選ばれる少なくとも一種を含有するこ
とを特徴とする請求項1記載の感光性ポリイミド前駆体
用現像液。
2. The photosensitive material according to claim 1, which contains at least one selected from the group consisting of an aqueous solution of tetramethylammonium hydroxide, an aqueous solution of tetraethylammonium hydroxide and an aqueous solution of choline, as an alkali other than amino alcohols. Developer for polyimide precursor.
【請求項3】アミノアルコール類以外のアルカリの濃度
が0.5〜15重量%であることを特徴とする請求項1
または2記載の感光性ポリイミド前駆体用現像液。
3. The concentration of alkali other than amino alcohols is 0.5 to 15% by weight.
Alternatively, the developing solution for the photosensitive polyimide precursor described in 2.
JP9013093A 1993-02-03 1993-04-16 Developer for photosensitive polyimide precursor Expired - Fee Related JP3303416B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9013093A JP3303416B2 (en) 1993-04-16 1993-04-16 Developer for photosensitive polyimide precursor
PCT/JP1994/000104 WO1994018607A1 (en) 1993-02-03 1994-01-26 Process for forming positive polyimide pattern
US08/692,337 US5614354A (en) 1993-02-03 1994-01-26 Method of forming positive polyimide patterns
EP94905210A EP0634698A4 (en) 1993-02-03 1994-01-26 Process for forming positive polyimide pattern.
KR1019940703469A KR950701093A (en) 1993-02-03 1994-10-01 A method of forming positive polyimide patterns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9013093A JP3303416B2 (en) 1993-04-16 1993-04-16 Developer for photosensitive polyimide precursor

Publications (2)

Publication Number Publication Date
JPH06301217A true JPH06301217A (en) 1994-10-28
JP3303416B2 JP3303416B2 (en) 2002-07-22

Family

ID=13989934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9013093A Expired - Fee Related JP3303416B2 (en) 1993-02-03 1993-04-16 Developer for photosensitive polyimide precursor

Country Status (1)

Country Link
JP (1) JP3303416B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6162592A (en) * 1998-10-06 2000-12-19 Wisconsin Alumni Research Foundation Methods for decreasing surface roughness in novolak-based resists
US6403289B1 (en) 1997-10-31 2002-06-11 Nippon Zeon Co., Ltd. Developer for photosensitive polyimide resin composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6403289B1 (en) 1997-10-31 2002-06-11 Nippon Zeon Co., Ltd. Developer for photosensitive polyimide resin composition
US6162592A (en) * 1998-10-06 2000-12-19 Wisconsin Alumni Research Foundation Methods for decreasing surface roughness in novolak-based resists

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