JPH06290641A - Noncrystal transparent conductive membrane - Google Patents
Noncrystal transparent conductive membraneInfo
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- JPH06290641A JPH06290641A JP5095568A JP9556893A JPH06290641A JP H06290641 A JPH06290641 A JP H06290641A JP 5095568 A JP5095568 A JP 5095568A JP 9556893 A JP9556893 A JP 9556893A JP H06290641 A JPH06290641 A JP H06290641A
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- transparent conductive
- film
- conductive film
- group
- conductive membrane
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- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
- Electroluminescent Light Sources (AREA)
- Compounds Of Iron (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は非晶質でありながら透明
性を維持しつつ電気比抵抗を低下させた金属酸化物系の
透明導電膜に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal oxide-based transparent conductive film which is amorphous but has a reduced electrical resistivity while maintaining transparency.
【０００２】[0002]
【従来の技術】透明導電膜は可視光透過性も導電性も良
いので、液晶用電極や太陽熱利用の選択透過膜などに使
用されている。特にＳｎＯ2 系やＩｎ2 Ｏ3 系の薄膜は
抵抗値が低く可視光透過率が高く安定性も良いため、一
般的に広く用いられている。2. Description of the Related Art Since a transparent conductive film has both good visible light transparency and good conductivity, it is used as a liquid crystal electrode or a selective transmission film utilizing solar heat. In particular, SnO 2 -based or In 2 O 3 -based thin films are generally widely used because they have low resistance, high visible light transmittance, and good stability.
【０００３】これらの透明導電膜は、従来からスプレー
法やメッキ法等の化学的成膜法あるいはイオンプレーテ
ィング法やスパッタリング法などの物理的成膜法によっ
て製造されており、なかでも良質の透明導電膜を大面積
で得ることができる等の特性を有するスパッタリング法
が多く採用されている。These transparent conductive films are conventionally manufactured by chemical film forming methods such as spraying and plating, or physical film forming methods such as ion plating and sputtering, and among them, high quality transparent conductive films are used. A sputtering method, which has characteristics such that a conductive film can be obtained in a large area, is often used.
【０００４】しかしこれらの透明導電膜材料は結晶質の
膜で利用されることが多く、その構成結晶粒の大きさや
質によって易動度、さらには導電性が左右されやすく、
加えて過剰のキャリアドープ等によって粒界へのドープ
元素の偏析や結晶自体の破壊を招くことになり、良好で
安定な電導性の膜を得る際に問題となることがあった。
この対策として、成膜後のアニーリング等が施されてき
た。However, these transparent conductive film materials are often used in crystalline films, and their mobility and conductivity are easily influenced by the size and quality of the constituent crystal grains.
In addition, excessive carrier doping may lead to segregation of the doping element at the grain boundaries and destruction of the crystal itself, which may be a problem in obtaining a good and stable conductive film.
As measures against this, annealing after film formation has been performed.
【０００５】また、結晶質であるためにパターンエッチ
ング時のエッチング速度の異方性などが問題となること
もあり、成膜法の工夫等により配向膜を作り対応してき
た（特開昭６３−２０２８９０号）。さらに、従来透明
導電膜として使われてきた結晶質透明導電膜材料のほと
んどが耐摩耗性や耐擦傷性に著しく弱く、これらの性能
を保護膜によって補ってきた。In addition, since it is crystalline, anisotropy of the etching rate at the time of pattern etching may be a problem, and an alignment film has been prepared and dealt with by devising the film forming method (JP-A-63-63). 202890). Furthermore, most of the crystalline transparent conductive film materials conventionally used as transparent conductive films are extremely weak in abrasion resistance and scratch resistance, and these properties have been supplemented by a protective film.
【０００６】[0006]
【発明が解決しようとする課題】上述の問題を解決すべ
く、ＩＴＯを非晶質化した例（特開昭６３−２４３２６
１号）などが報告されているが、これらはいずれも結晶
質の場合と比べて導電性を犠牲にしていた。本発明は、
上記結晶質透明導電膜の諸問題を解決し、優れた導電性
を有する新規な非晶質透明導電膜を提供することを目的
とする。In order to solve the above problems, an example in which ITO is made amorphous (Japanese Patent Laid-Open No. 63-24326).
No. 1) and the like have been reported, but these all sacrifice conductivity as compared with the case of crystalline. The present invention is
It is an object of the present invention to solve various problems of the crystalline transparent conductive film and provide a novel amorphous transparent conductive film having excellent conductivity.
【０００７】[0007]
【課題を解決するための手段】本発明は、ＡＢ2-x Ｏ
4-y で示される金属酸化物からなる非晶質構造の透明導
電膜において、該ＡＢ2-x Ｏ4-y のＡが、Ｍｇ、Ｃｄ、
Ｚｎ、Ｃａ、Ｃｏ、Ｓｒ、およびＢａからなる群から選
ばれる少なくとも一種であり、Ｂが、Ａｌ、Ｉｎ、Ｇ
ａ、Ｒｈ、Ｃｒ、Ｖ、Ｆｅ、およびＭｎからなる群から
選ばれる少なくとも一種であり、かつ、−０．５＜ｘ＜
０．５、−１＜ｙ＜１．５の組成比であることを特徴と
する非晶質構造の透明導電膜を提供する。SUMMARY OF THE INVENTION The present invention is directed to AB 2-x O
In the transparent conductive film having an amorphous structure made of a metal oxide represented by 4-y , A of AB 2-x O 4-y is Mg, Cd,
At least one selected from the group consisting of Zn, Ca, Co, Sr, and Ba, and B is Al, In, G
at least one selected from the group consisting of a, Rh, Cr, V, Fe, and Mn, and -0.5 <x <
Provided is a transparent conductive film having an amorphous structure, which has a composition ratio of 0.5 and -1 <y <1.5.
【０００８】本発明においては、上記ＡＢ2-x ０4-y の
組成比において−０．５＜ｘ＜０．５、−１＜ｙ＜１．
５の酸化物を用いることが重要である。ｘが上記範囲を
はずれるか、あるいはｙが上記範囲をはずれると、成膜
時にＡの金属酸化物あるいはＢの金属酸化物のいずれか
の酸化物を主成分とする結晶相が薄膜中に析出しやすく
なり、透明導電膜の性能が安定化しない。In the present invention, the composition ratio of AB 2-x 0 4-y is -0.5 <x <0.5, -1 <y <1.
It is important to use the oxide of 5. If x is out of the above range or y is out of the above range, a crystal phase containing an oxide of either A metal oxide or B metal oxide as a main component is deposited in the thin film during film formation. It becomes easy and the performance of the transparent conductive film is not stabilized.
【０００９】また、ＡＢ2-x Ｏ4-y に、Ｓｎ、Ｔｉ、Ｚ
ｒ、Ａｌ、Ｇａ、Ｐｂ、Ｂ、Ａｓ、Ｂｉ、Ｃｅ、Ｇｅ、
Ｍｏ、Ｙ、Ｗ、Ｔａ、Ｎｂ、およびこれらの酸化物から
なる群から選ばれる少なくとも一種を添加することによ
ってさらに導電性が良好な透明導電膜が得られる。Further, AB 2-x O 4-y has Sn, Ti, Z
r, Al, Ga, Pb, B, As, Bi, Ce, Ge,
By adding at least one selected from the group consisting of Mo, Y, W, Ta, Nb, and oxides thereof, a transparent conductive film having better conductivity can be obtained.
【００１０】この場合の添加量は特、に制限されない
が、ＡＢ2-x Ｏ4-y に対し、Ｓｎ、Ｔｉ、Ｚｒ、Ａｌ、
Ｇａ、Ｐｂ、Ｂ、Ａｓ、Ｂｉ、Ｃｅ、Ｇｅ、Ｍｏ、Ｙ、
Ｗ、Ｔａ、およびＮｂからなる群から選ばれる少なくと
も一種の金属元素を０．０１〜１０原子％含むことが好
ましい。この範囲を超えるとキャリアの易動度に著しい
悪影響を与えて電導率の低下を招くため、上記範囲で添
加することが好ましい。ただし添加をせず、酸素欠陥の
みでもキャリアを入れることが可能である。[0010] The addition amount in this case is not limited especially, in respect AB 2-x O 4-y , Sn, Ti, Zr, Al,
Ga, Pb, B, As, Bi, Ce, Ge, Mo, Y,
It is preferable to contain 0.01 to 10 atom% of at least one metal element selected from the group consisting of W, Ta, and Nb. If it exceeds this range, the mobility of the carrier is significantly adversely affected and the electric conductivity is lowered, so that it is preferably added within the above range. However, it is possible to add carriers only by oxygen defects without addition.
【００１１】また、上記元素が有効にキャリアの供給源
として働くには、ＡあるいはＢに対して、表１のように
添加元素の組み合わせを選択することが好ましい。な
お、成膜時の雰囲気を還元性にするか、あるいは成膜後
に還元雰囲気中で熱処理することによっても同様の効果
を得る。Further, in order for the above elements to effectively act as a carrier supply source, it is preferable to select a combination of additive elements for A or B as shown in Table 1. The same effect can be obtained by reducing the atmosphere during film formation or by performing heat treatment in a reducing atmosphere after film formation.
【００１２】[0012]
【表１】 [Table 1]
【００１３】表１において、○は好ましい添加元素の組
み合わせであることを、△は可能であるがあまり好まし
くない組み合わせであることを、×は添加によってかえ
ってマイナス要素となる組み合わせをそれぞれ示す。In Table 1, ∘ indicates a preferable combination of additional elements, Δ indicates a possible but less preferable combination, and x indicates a combination which becomes a negative factor by addition.
【００１４】本発明の透明導電膜を製造する方法として
は、例えば、スパッタリング法、真空蒸着法、イオンプ
レーティング法、ＣＶＤ法等が用いられ、これらの製造
方法の相違に応じて製造用材料が上記したなかから任意
に選択される。As a method for producing the transparent conductive film of the present invention, for example, a sputtering method, a vacuum vapor deposition method, an ion plating method, a CVD method or the like is used, and a production material is selected depending on a difference between these production methods. It is arbitrarily selected from the above.
【００１５】本発明の透明導電膜を製造するための製膜
用材料の形態としては特に限定されないが、混合物また
は焼結体が好ましい。また、製膜用材料における金属
Ａ、Ｂは、いずれか一方あるいは両方が金属単体として
用いられてもよいが、この場合には透明導電膜製造時に
酸素ガス雰囲気下で行うか、酸素ガスを吹き込むことが
必要となる。The form of the film-forming material for producing the transparent conductive film of the present invention is not particularly limited, but a mixture or a sintered body is preferable. Further, either one or both of the metals A and B in the film forming material may be used as a simple metal. In this case, the transparent conductive film is produced in an oxygen gas atmosphere or an oxygen gas is blown. Will be required.
【００１６】透明導電膜を安価に安定して供給できると
いう観点においては、Ａ金属酸化物とＢ金属酸化物とか
らなる焼結体を用いることが好ましい。なおこれらの焼
結体がスピネルやペロブスカイト等の結晶構造を含む場
合には成膜速度等に影響などが考えられるが、透明性や
導電性への影響は少ない。From the viewpoint that a transparent conductive film can be stably supplied at a low cost, it is preferable to use a sintered body composed of A metal oxide and B metal oxide. When these sintered bodies contain a crystal structure such as spinel or perovskite, the film formation rate and the like may be affected, but the transparency and conductivity are not significantly affected.
【００１７】このようにして得られた透明導電膜は高い
光透過性と低い比抵抗値を示し、かつ非晶質の膜であ
り、粒界によるキャリアの散乱や添加元素の偏析等の問
題をなくし、加えてその等方性からエッチング時のエッ
チング斑も生じさせず、かつ耐摩耗性、耐擦傷性を持た
せ、結晶質透明導電膜では不可能と考えられた用途にも
利用が可能である。The transparent conductive film thus obtained has a high light transmittance and a low specific resistance value, and is an amorphous film, which causes problems such as carrier scattering by grain boundaries and segregation of additional elements. In addition, because of its isotropy, it does not cause etching spots during etching, has abrasion resistance and scratch resistance, and can be used for applications considered impossible with crystalline transparent conductive films. is there.
【００１８】[0018]
例１ マグネトロンＲ．Ｆ．スパッタ装置の陰極上に高純度
（９９．９９％）の酸化インジウム（Ｉｎ2 Ｏ3 ）８
７．３重量％と酸化マグネシウム（ＭｇＯ）１２．７重
量％とを混合し焼結したＭｇＩｎ2 Ｏ4-Z （０＜Ｚ＜
２）のスピネル構造結晶ターゲットをセットする。研磨
などの方法で３ｍｍ厚のソーダライムガラス基板を十分
に洗浄、乾燥した後、真空チャンバー内に入れ、クライ
オポンプで１×１０-6Ｔｏｒｒ以下まで排気する。この
際、基板は２５０℃に加熱した。Example 1 Magnetron R.M. F. High purity (99.99%) indium oxide (In 2 O 3 ) 8 is formed on the cathode of the sputtering device.
MgIn 2 O 4 -Z (0 <Z <where 7.3% by weight and 12.7% by weight of magnesium oxide (MgO) are mixed and sintered.
Set the spinel structure crystal target of 2). A soda lime glass substrate having a thickness of 3 mm is thoroughly washed and dried by a method such as polishing, placed in a vacuum chamber, and then evacuated to 1 × 10 −6 Torr or less by a cryopump. At this time, the substrate was heated to 250 ° C.
【００１９】次にＡｒとＯ2 の混合ガス（Ａｒ：Ｏ2 ＝
９９．９：０．１）を真空系に導入し、その圧力が５．
０×１０-3Ｔｏｒｒになるように調整する。この状態で
ターゲットに２．２Ｗ／ｃｍ2 のパワーを印加し、１０
分間プレスパッタした後、６分間スパッタを行いＭｇＩ
ｎ2.1 Ｏ3.6 膜を約４０００Å成膜した。Next, a mixed gas of Ar and O 2 (Ar: O 2 =
99.9: 0.1) was introduced into the vacuum system and the pressure was 5.
Adjust to 0 × 10 −3 Torr. In this state, a power of 2.2 W / cm 2 was applied to the target, and 10
After pre-sputtering for 1 minute, sputter for 6 minutes
An n 2.1 O 3.6 film was formed at about 4000 Å.
【００２０】例２ 高純度Ｉｎ2 Ｏ3 ８４．７重量％とＭｇＯ １２．３重
量％と酸化スズ（ＳｎＯ2 ）３重量％とを混合し焼結し
て得たターゲットを用いた他は、例１と同様に成膜し
た。Example 2 A target obtained by mixing 84.7% by weight of high-purity In 2 O 3, 12.3% by weight of MgO and 3% by weight of tin oxide (SnO 2 ) and sintering the mixture was used. A film was formed in the same manner as in Example 1.
【００２１】例３ 高純度Ｉｎ2 Ｏ3 ８６．５重量％とＭｇＯ １２．５重
量％と酸化チタン（ＴｉＯ2 ）１重量％とを混合し焼結
して得たターゲットを用いた他は、例１と同様に成膜し
た。Example 3 A target obtained by mixing 86.5% by weight of high purity In 2 O 3, 12.5% by weight of MgO and 1% by weight of titanium oxide (TiO 2 ) and sintering the mixture was used. A film was formed in the same manner as in Example 1.
【００２２】例４ 高純度（９９．９９％）の酸化ガリウム（Ｇａ2 Ｏ3 ）
５７．６重量％と酸化カドミウム（ＣｄＯ）３９．４重
量％とＳｎＯ2 ３重量％とを混合し焼結して得たターゲ
ットを用いた他は、例１と同様に成膜した。Example 4 High purity (99.99%) gallium oxide (Ga 2 O 3 )
A film was formed in the same manner as in Example 1 except that a target obtained by mixing and sintering 57.6% by weight, cadmium oxide (CdO) 39.4% by weight, and SnO 2 3% by weight was used.
【００２３】例５ 高純度Ｇａ2 Ｏ3 ５７．６重量％とＣｄＯ １２．５重
量％とＴｉＯ2 １重量％とを混合し焼結して得たターゲ
ットを用いた他は、例１と同様に成膜した。Example 5 Same as Example 1 except that a target obtained by mixing 57.6% by weight of high purity Ga 2 O 3 with 12.5% by weight of CdO and 1% by weight of TiO 2 and sintering the mixture was used. It was formed into a film.
【００２４】例６（比較例） 雰囲気の酸素分率をＡｒ：Ｏ2 ＝９９．５：０．５に
し、基板温度を室温（２５℃）にした他は、例１と同様
に成膜した。Example 6 (Comparative Example) A film was formed in the same manner as in Example 1 except that the oxygen fraction in the atmosphere was Ar: O 2 = 99.5: 0.5 and the substrate temperature was room temperature (25 ° C.). .
【００２５】例７（比較例） 雰囲気の酸素分率をＡｒ：Ｏ2 ＝９９．５：０．５に
し、基板温度を室温（２５℃）にした他は、例４と同様
に成膜した。Example 7 (Comparative Example) A film was formed in the same manner as in Example 4 except that the oxygen fraction in the atmosphere was Ar: O 2 = 99.5: 0.5 and the substrate temperature was room temperature (25 ° C.). .
【００２６】例１〜７に用いたターゲットと、例１〜７
により得られた膜の組成、導電率（Ｓ／ｃｍ）、屈折
率、可視光透過率（％）、易動度（ｃｍ2 ／Ｖｓｅ
ｃ）、キャリア濃度（ｃｍ-3）、結晶性を表２に示す。Targets used in Examples 1 to 7 and Examples 1 to 7
The composition, conductivity (S / cm), refractive index, visible light transmittance (%), mobility (cm 2 / Vse) of the film obtained by
c), carrier concentration (cm −3 ), and crystallinity are shown in Table 2.
【００２７】また、耐擦傷性、耐摩耗性の評価結果をを
表３に示す。耐擦傷性は砂消しゴムによる擦り試験で評
価し、○は傷がほとんどつかなかったもの、×は傷が容
易に生じたものである。耐摩耗性は、テーバー試験（摩
耗輪ＣＳ−１０Ｆ、加重５００ｇ、５００回転）で評価
し、ヘイズ４％以内のものを○、ヘイズが４％を超える
ものを×とした。Table 3 shows the evaluation results of scratch resistance and wear resistance. The scratch resistance was evaluated by a rubbing test using a sand eraser. O indicates that scratches were scarce, and X indicates that scratches were easily generated. The wear resistance was evaluated by a Taber test (wear wheel CS-10F, weight 500 g, 500 rotations), and haze within 4% was evaluated as ◯, and haze exceeding 4% was evaluated as x.
【００２８】[0028]
【表２】 [Table 2]
【００２９】[0029]
【表３】 [Table 3]
【００３０】表２より明らかなように、例１〜５のいず
れにおいても膜は非晶質であり、導電性、可視光透過性
がともに優れた良質の透明導電膜が得られた。特に例２
の膜は、比抵抗値６．８×１０-4Ωｃｍの値を示し、可
視光透過性も９０％以上のもっとも好ましい結果を得て
いる。なお、非晶質性は薄膜Ｘ線回折により観測し、さ
らに透過電子顕微鏡により明瞭な結晶格子縞が観測され
ないことから確認した。As is clear from Table 2, in any of Examples 1 to 5, the film was amorphous, and a good quality transparent conductive film excellent in both conductivity and visible light transmittance was obtained. Especially Example 2
The film has a specific resistance value of 6.8 × 10 −4 Ωcm and has a visible light transmittance of 90% or more, which is the most preferable result. The amorphousness was confirmed by thin film X-ray diffraction, and no clear crystal lattice fringes were observed by a transmission electron microscope.
【００３１】表３より、耐摩耗、耐擦傷性において結晶
質膜に対して優れていることがわかる。これは非晶質膜
の表面が平滑であることと、等方性ゆえに極端に弱い方
位を持たないこと、ダングリングボンド等の欠陥が転位
などの発生源となること、等が原因と考えられる。From Table 3, it can be seen that abrasion resistance and scratch resistance are superior to those of the crystalline film. It is considered that this is because the surface of the amorphous film is smooth, does not have an extremely weak orientation due to the isotropic property, and defects such as dangling bonds are sources of dislocations. .
【００３２】[0032]
【発明の効果】本発明による新しい非晶質透明導電膜
は、優れた透明性と導電性を有し、このため液晶、エレ
クトロルミネッセンス、エレクトロクロミック等の表示
素子、タッチパネル、太陽電池用、透明ヒーター用の電
極として、また、電磁波シールド、静電防止、デフロス
ター、熱線反射膜等に好適に用いられる。Industrial Applicability The novel amorphous transparent conductive film according to the present invention has excellent transparency and conductivity, and for this reason, it is used for display devices such as liquid crystal, electroluminescence, electrochromic, touch panels, solar cells, and transparent heaters. It is preferably used as an electrode for electromagnetic waves, an electromagnetic wave shield, an antistatic, a defroster, a heat ray reflective film, and the like.
【００３３】また、等方性の非晶質であるため、フォト
リソグラフィー技術でエッチングし微細加工を施すとき
に、優れたパタニング性を有し、高い歩留まりで、レジ
ストパターンに忠実な乱れのないきれいなパターンを得
ることができる。さらに、結晶質の膜と比べて耐摩耗、
耐擦傷性に優れるため、保護膜の必要性が軽減され、透
明導電膜の新しい用途への展開が考えられる。Further, since it is isotropic amorphous, it has an excellent patterning property when it is subjected to fine processing by etching with a photolithography technique, and it has a high yield and is clean and faithful to the resist pattern. You can get the pattern. In addition, wear resistance compared to crystalline films,
Since it has excellent scratch resistance, the need for a protective film is alleviated, and it is considered that the transparent conductive film can be applied to new applications.
フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｃ０１Ｇ 37/00 45/00 49/00 Ａ 51/00 Ａ 55/00 Ｃ２３Ｃ 14/08 Ｌ 9271−4Ｋ Continuation of the front page (51) Int.Cl. 5 Identification number Office reference number FI Technical display location C01G 37/00 45/00 49/00 A 51/00 A 55/00 C23C 14/08 L 9271-4K
Claims (3)
なる非晶質構造の透明導電膜において、該ＡＢ2-x Ｏ
4-y のＡが、Ｍｇ、Ｃｄ、Ｚｎ、Ｃａ、Ｃｏ、Ｓｒ、お
よびＢａからなる群から選ばれる少なくとも一種であ
り、Ｂが、Ａｌ、Ｉｎ、Ｇａ、Ｒｈ、Ｃｒ、Ｖ、Ｆｅ、
およびＭｎからなる群から選ばれる少なくとも一種であ
り、かつ、−０．５＜ｘ＜０．５、−１＜ｙ＜１．５の
組成比であることを特徴とする非晶質構造の透明導電
膜。1. In a transparent conductive film having an amorphous structure made of a metal oxide represented by AB 2-x O 4-y , said AB 2-x O 4-
A of 4-y is at least one selected from the group consisting of Mg, Cd, Zn, Ca, Co, Sr, and Ba, and B is Al, In, Ga, Rh, Cr, V, Fe,
And at least one selected from the group consisting of Mn, and having a composition ratio of -0.5 <x <0.5, -1 <y <1.5, having a transparent amorphous structure. Conductive film.
Ｏ4-y に、Ｓｎ、Ｔｉ、Ｚｒ、Ａｌ、Ｇａ、Ｐｂ、Ｂ、
Ａｓ、Ｂｉ、Ｃｅ、Ｇｅ、Ｍｏ、Ｙ、Ｗ、Ｔａ、Ｎｂ、
およびこれらの酸化物からなる群から選ばれる少なくと
も一種を含むことを特徴とする非晶質構造の透明導電
膜。2. The transparent conductive film according to claim 1, wherein AB 2-x
O 4-y , Sn, Ti, Zr, Al, Ga, Pb, B,
As, Bi, Ce, Ge, Mo, Y, W, Ta, Nb,
And a transparent conductive film having an amorphous structure, containing at least one selected from the group consisting of these oxides.
Ｓｎ、Ｔｉ、Ｚｒ、Ａｌ、Ｇａ、Ｐｂ、Ｂ、Ａｓ、Ｂ
ｉ、Ｃｅ、Ｇｅ、Ｍｏ、Ｙ、Ｗ、Ｔａ、およびＮｂから
なる群から選ばれる少なくとも一種を０．０１〜１０原
子％含むことを特徴とする非晶質構造の透明導電膜。3. The transparent conductive film according to claim 1, wherein
Sn, Ti, Zr, Al, Ga, Pb, B, As, B
A transparent conductive film having an amorphous structure, containing 0.01 to 10 atomic% of at least one selected from the group consisting of i, Ce, Ge, Mo, Y, W, Ta, and Nb.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09556893A JP3366046B2 (en) | 1993-03-30 | 1993-03-30 | Amorphous transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09556893A JP3366046B2 (en) | 1993-03-30 | 1993-03-30 | Amorphous transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06290641A true JPH06290641A (en) | 1994-10-18 |
| JP3366046B2 JP3366046B2 (en) | 2003-01-14 |
Family
ID=14141203
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09556893A Expired - Fee Related JP3366046B2 (en) | 1993-03-30 | 1993-03-30 | Amorphous transparent conductive film |
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