JPH0628712U - Thin film adhesion measuring device - Google Patents

Thin film adhesion measuring device

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Publication number
JPH0628712U
JPH0628712U JP6294992U JP6294992U JPH0628712U JP H0628712 U JPH0628712 U JP H0628712U JP 6294992 U JP6294992 U JP 6294992U JP 6294992 U JP6294992 U JP 6294992U JP H0628712 U JPH0628712 U JP H0628712U
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JP
Japan
Prior art keywords
thin film
tip
probe
scratching
adhesion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6294992U
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Japanese (ja)
Inventor
学 武居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
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Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP6294992U priority Critical patent/JPH0628712U/en
Publication of JPH0628712U publication Critical patent/JPH0628712U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【目的】基板上に成膜した薄膜の密着力を高精度に評価
するとともに、膜厚がnm単位の極く薄い膜の密着力測
定も可能とする。 【構成】互いに異なる接触圧で薄膜に押付けられる複数
の突起16を有しこれら突起16によって薄膜2の複数
箇所を引っ掻く薄膜引っ掻き体14と、先端に薄膜2の
表面に近接対向する探針21を有し基端を一定レベルに
支持されて薄膜2の引っ掻き箇所を含む領域を走査する
とともに探針21の先端と薄膜2との間に働く原子間力
により薄膜2の表面状態に応じて変位する薄膜倣い素子
19と、この倣い素子19の変位を検出する検出器23
とを備えた。
(57) [Abstract] [Purpose] It is possible to evaluate the adhesion of a thin film formed on a substrate with high accuracy and to measure the adhesion of a very thin film with a thickness of nm. A thin film scratching body (14) having a plurality of projections (16) pressed against a thin film with different contact pressures and scratching a plurality of locations of the thin film (2) by the projections (16) and a probe (21) closely facing the surface of the thin film (2) at the tip. The base end of the thin film 2 is supported at a constant level to scan a region including the scratched portion of the thin film 2, and the thin film 2 is displaced according to the surface state of the thin film 2 by an atomic force acting between the tip of the probe 21 and the thin film 2. Thin film copying element 19 and detector 23 for detecting displacement of the copying element 19
Equipped with.

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】[Industrial applications]

本考案は、基板上に成膜された薄膜の密着力を測定するための装置に関するも のである。 The present invention relates to a device for measuring the adhesive force of a thin film formed on a substrate.

【0002】[0002]

【従来の技術】[Prior art]

従来、基板上に蒸着法、スパッタリング法、プラズマCVD法、LB(ラング ミュア・ブロジェット)法等によって成膜した金属膜、酸化金属膜、酸化シリコ ン膜、窒化シリコン膜、有機単分子膜等の薄膜の密着力の測定は、スクラッチテ スターによって行われている。 Conventionally, a metal film, a metal oxide film, a silicon oxide film, a silicon nitride film, an organic monomolecular film, etc. formed on a substrate by vapor deposition, sputtering, plasma CVD, LB (Langmuir-Blodgett), etc. The adhesion strength of the thin film is measured by a scratch tester.

【0003】 上記スクラッチテスターは、基板上に成膜した薄膜の表面をこすって薄膜の剥 がれ具合を調べるもので、基板に対する薄膜の密着力は、薄膜表面を所定の力で こすって薄膜の剥がれの有無を光学顕微鏡により観察することにより評価されて いる。The above-mentioned scratch tester is for rubbing the surface of a thin film formed on a substrate to check the degree of peeling of the thin film. The adhesion of the thin film to the substrate is determined by rubbing the thin film surface with a predetermined force. It is evaluated by observing the presence or absence of peeling with an optical microscope.

【0004】[0004]

【考案が解決しようとする課題】[Problems to be solved by the device]

しかしながら、上記スクラッチテスターによる薄膜の密着力測定では、薄膜の 剥がれの有無を光学顕微鏡で観察できる精度でしか判定できないため、薄膜の密 着力を高精度に評価することは難しいし、また、膜厚がnm(ナノメータ)単位 の極く薄い膜の密着力は測定できなかった。 However, in the measurement of the adhesion force of the thin film by the scratch tester, it is difficult to evaluate the adhesion force of the thin film with high accuracy because the presence or absence of peeling of the thin film can be determined only with an accuracy that can be observed with an optical microscope. However, the adhesion force of an extremely thin film in the unit of nm (nanometer) could not be measured.

【0005】 本考案の目的は、基板上に成膜した薄膜の密着力を高精度に評価することがで きるとともに、膜厚がnm単位の極く薄い膜の密着力も測定することができる密 着力測定装置を提供することにある。The object of the present invention is to evaluate the adhesion force of a thin film formed on a substrate with high accuracy and to measure the adhesion force of an extremely thin film with a thickness of nm unit. An object is to provide a force measuring device.

【0006】[0006]

【課題を解決するための手段】[Means for Solving the Problems]

本考案の密着力測定装置は、互いに異なる接触圧で薄膜に押付けられる複数の 突起を有しこれら突起によって前記薄膜の複数箇所を引っ掻く薄膜引っ掻き体と 、先端に前記薄膜の表面に近接対向する探針を有し基端を一定レベルに支持され て前記薄膜の引っ掻き箇所を含む領域を走査するとともに前記探針の先端と前記 薄膜との間に働く原子間力により前記薄膜の表面状態に応じて変位する薄膜倣い 素子と、前記倣い素子の変位を検出する検出器とを備えたことを特徴とするもの である。 The adhesion force measuring device of the present invention has a plurality of protrusions that are pressed against a thin film by different contact pressures, and a thin film scratching body that scratches a plurality of locations of the thin film by these protrusions, and a probe that is close to the surface of the thin film at its tip. The thin film has a needle supported at a constant level at its proximal end to scan a region including a scratched portion of the thin film, and the atomic force acting between the tip of the probe and the thin film causes the thin film to change in accordance with the surface state of the thin film. It is characterized in that it comprises a thin film scanning element that is displaced and a detector that detects the displacement of the scanning element.

【0007】[0007]

【作用】[Action]

すなわち、本考案の密着力測定装置は、基板上に成膜した薄膜を薄膜引っ掻き 体によって引っ掻き、この薄膜の引っ掻き箇所を含む領域を薄膜倣い素子で走査 して薄膜の剥がれの有無を検査するものであり、前記倣い素子は薄膜の表面状態 に応じて変位するため、この倣い素子の変位を検出器で検出すれば、薄膜の引っ 掻き箇所での剥がれの有無を知ることができる。 That is, the adhesion measuring device of the present invention scratches a thin film formed on a substrate with a thin film scratching body, and scans a region including a scratched portion of the thin film with a thin film copying element to inspect whether or not the thin film is peeled. Since the copying element is displaced according to the surface condition of the thin film, the presence or absence of peeling at the scratched portion of the thin film can be known by detecting the displacement of this copying element with a detector.

【0008】 そして、この密着力測定装置においては、上記倣い素子が、薄膜の表面に近接 対向する探針の先端と薄膜との間に働く原子間力によって変位するため、倣い素 子による薄膜表面の倣い精度が高く、したがって、薄膜の剥がれの有無を精度良 く検出して、薄膜の密着力を高精度に評価することができるし、また膜厚がnm 単位の極く薄い膜の密着力も測定することができる。In this adhesion force measuring apparatus, since the copying element is displaced by the atomic force acting between the thin film surface and the tip of the probe that closely faces the thin film surface, the thin film surface formed by the copying element is displaced. The accuracy of scanning is high, and therefore the presence or absence of peeling of the thin film can be detected with high accuracy, and the adhesion of the thin film can be evaluated with high accuracy. Can be measured.

【0009】 しかも、この密着力測定装置では、上記薄膜引っ掻き体を、互いに異なる接触 圧で薄膜に押付けられる複数の突起によって薄膜の複数箇所を引っ掻くものとし ているため、複数の引っ掻き力(薄膜に対する突起の接触圧)に対する薄膜の剥 がれの有無を同時に検出することができ、したがって薄膜の密着力を能率良く測 定することができる。Moreover, in this adhesion force measuring device, since the thin film scratching body scratches a plurality of portions of the thin film by a plurality of projections which are pressed against the thin film by different contact pressures, a plurality of scratching forces (for the thin film) The presence or absence of peeling of the thin film with respect to the contact pressure of the protrusion) can be detected at the same time, and thus the adhesive force of the thin film can be efficiently measured.

【0010】[0010]

【実施例】【Example】

以下、本考案の一実施例を図1〜図5を参照して説明する。図1は密着力測定 装置の基本構成を示す斜視図、図2は密着力測定装置の側面図である。 An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a perspective view showing the basic configuration of the adhesion measuring device, and FIG. 2 is a side view of the adhesion measuring device.

【0011】 この密着力測定装置は、基台11とこの基台11に一端を支持されてその上方 に設けられた梁部12とからなる装置本体10に、基板支持テーブル13と、薄 膜引っ掻き体14と、薄膜倣い素子19と、この倣い素子19の変位を検出する 検出器23とを設けて構成されている。In this adhesion measuring device, a substrate supporting table 13 and a thin film scratch are provided on a device main body 10 composed of a base 11 and a beam portion 12 having one end supported by the base 11 and provided above the base 11. A body 14, a thin film copying element 19, and a detector 23 for detecting the displacement of the copying element 19 are provided.

【0012】 上記基板支持テーブル13は、薄膜2を成膜した基板1を真空吸着等の手段に よって固定支持するもので、この基板支持テーブル13は、装置本体10の基台 11上に配置され、基台11内に設けた図示しない移動装置によって、Xおよび Y方向(左右および前後方向)とZ方向(上下方向)とに移動されるようになっ ている。The substrate support table 13 is for fixing and supporting the substrate 1 on which the thin film 2 is formed by means such as vacuum adsorption, and the substrate support table 13 is arranged on the base 11 of the apparatus body 10. A moving device (not shown) provided in the base 11 moves in the X and Y directions (left and right and front and back) and the Z direction (up and down).

【0013】 なお、上記基板支持テーブル13の移動装置は、X方向移動機構と、Y方向移 動機構と、Z方向方向移動機構とを備えており、これら移動機構はそれぞれ高精 密ボールねじ等で構成されている。また、前記Z方向移動機構は、基板支持テー ブル13を極く僅かに上下動させる微動機構も備えており、この微動機構はピエ ゾ素子等で構成されている。The moving device for the substrate support table 13 includes an X-direction moving mechanism, a Y-direction moving mechanism, and a Z-direction moving mechanism, and these moving mechanisms are respectively highly precise ball screws and the like. It is composed of. The Z-direction moving mechanism also includes a fine movement mechanism that moves the substrate support table 13 up and down very slightly, and the fine movement mechanism is composed of a piezo element or the like.

【0014】 また、薄膜引っ掻き体14は、複数本(図では5本)の弾性アーム15からな っており、各アーム15の先端にはそれぞれ前記薄膜2に押付けられる突起16 が設けられている。これら弾性アーム15はそれぞれ互いに異なるばね力をもっ ており、各アーム15の先端の突起16は、そのアーム15のばね力により、互 いに異なる接触圧で基板1上の薄膜2に押付けられる。The thin film scratching body 14 is composed of a plurality of elastic arms 15 (five in the figure), and each arm 15 is provided with a projection 16 to be pressed against the thin film 2 at the tip thereof. . These elastic arms 15 have different spring forces, and the projection 16 at the tip of each arm 15 is pressed against the thin film 2 on the substrate 1 with different contact pressures by the spring force of the arms 15.

【0015】 なお、この実施例では、各アーム15を1枚の極薄金属板を櫛歯状にプレス加 工して形成し、各アーム15の長さを異ならせて、各アーム15に異なるばね力 をもたせている。In this embodiment, each arm 15 is formed by pressing one ultra-thin metal plate into a comb shape, and the length of each arm 15 is made different so that each arm 15 is different. It has a spring force.

【0016】 また、上記各突起16は、例えばシリコンナイトライト(Si N)を異方性エ ッチングによって錐状に加工したもので、この突起16は図3(a)に示すよう な四角錐状をなしており、弾性アーム15の先端に接着固定されている。The protrusions 16 are, for example, silicon nitride (SiN) processed into a cone shape by anisotropic etching. The protrusions 16 have a quadrangular pyramid shape as shown in FIG. And is fixed to the tip of the elastic arm 15 by adhesion.

【0017】 すなわち、上記薄膜引っ掻き体14は、その各突起16の先端を互いに異なる 接触圧で上記薄膜2の表面に押付け、これら突起16によって前記薄膜2の複数 箇所を引っ掻くものであり、この薄膜引っ掻き体14は、その基部を、装置本体 10の梁部12に設けた昇降機構17によって昇降される引っ掻き体支持部材1 8の下面に接着して、この支持部材18に支持されている。That is, the thin film scratching body 14 presses the tips of the projections 16 on the surface of the thin film 2 with different contact pressures, and scratches the thin film 2 at a plurality of locations by the projections 16. The scratching body 14 is supported by the supporting member 18 by adhering the base portion thereof to the lower surface of the scratching body supporting member 18 which is lifted and lowered by the lifting mechanism 17 provided on the beam portion 12 of the apparatus body 10.

【0018】 なお、上記昇降機構17は、薄膜引っ掻き体14を薄膜倣い素子19の上方と 下方とに昇降させるもので、この昇降機構17は例えばソレノイドによって構成 されている。The elevating mechanism 17 elevates and lowers the thin film scratching body 14 above and below the thin film copying element 19, and the elevating mechanism 17 is constituted by, for example, a solenoid.

【0019】 一方、薄膜倣い素子19は、原子力間顕微鏡(AFM)のカンチレバー(片持 ちレバー)と同様なもので、この倣い素子19は、10-7〜10-11 N(ニュー トン)の力で撓み変形する金属箔(例えば金箔)製のレバー片20からなってお り、その先端には、薄膜の表面に近接対向する探針21が設けられている。On the other hand, the thin film copying element 19 is similar to a cantilever (cantilever lever) of an atomic force microscope (AFM), and the copying element 19 is 10 −7 to 10 −11. The lever piece 20 is made of a metal foil (for example, gold foil) that is bent and deformed by a force of N (Newton), and a tip end of which is provided with a probe 21 that closely faces the surface of the thin film.

【0020】 上記探針21は、シリコン(Si )引上げ、酸化錫(Zn O)ウイスカ−、シ リコンナイトライト(Si N)の異方性エッチング等による錐状針であり、この 探針21は例えば図3(b)に示すような円錐状をなしており、上記レバー片2 0の先端に接着固定されている。なお、この探針21は、上述した薄膜引っ掻き 体14の各突起16より尖鋭に形成されている。The probe 21 is a cone-shaped needle formed by pulling up silicon (Si), tin oxide (ZnO) whiskers, anisotropic etching of silicon nitrite (Si N), and the like. For example, it has a conical shape as shown in FIG. 3 (b), and is adhesively fixed to the tip of the lever piece 20. The probe 21 is formed to be sharper than each projection 16 of the thin film scratching body 14 described above.

【0021】 そして、上記倣い素子19は、その基端(レバー片20の基部)を装置本体1 0の梁部12に設けた倣い素子固定部材22の下面に接着して、基端が常に一定 レベルにあるように支持されている。なお、この倣い素子19は、その先端の探 針21の重さで先下がりに撓み変形している。The base end of the copying element 19 (the base of the lever piece 20) is adhered to the lower surface of the copying element fixing member 22 provided on the beam portion 12 of the apparatus body 10 so that the base end is always constant. Being favored to be at the level. The copying element 19 is bent and deformed downward due to the weight of the probe 21 at the tip thereof.

【0022】 すなわち、上記倣い素子19は、その基端を一定レベルに支持され、先端の探 針21の先端を上記薄膜2の表面に近接対向させた状態で上記薄膜2の引っ掻か き箇所(薄膜引っ掻き体14で引っ掻かれた箇所)を含む領域を走査するもので 、この倣い素子19は、その探針21の先端と薄膜2との間に働く原子間力によ り薄膜2の表面状態に応じて変位(レバー片20の傾き角が変化)する。That is, the copying element 19 has its base end supported at a constant level, and the scratching point () of the thin film 2 with the tip of the probe 21 at the tip closely facing the surface of the thin film 2. The scanning element 19 scans a region including a portion scratched by the thin film scratching body 14. This copying element 19 has a surface of the thin film 2 by an atomic force acting between the tip of the probe 21 and the thin film 2. The displacement (the tilt angle of the lever piece 20 changes) depending on the state.

【0023】 また、倣い素子19の変位を検出する検出器23は、例えば、倣い素子19の 上面(レバー片20の上面)にレーザビームを照射してその反射光の光束の拡大 率から倣い素子19の変位量を検出するもので、この検出器23は、装置本体1 0の梁部12に設けられている。 上記構成の装置による薄膜の密着力測定は次のようにして行なう。Further, the detector 23 for detecting the displacement of the copying element 19 irradiates the upper surface of the copying element 19 (the upper surface of the lever piece 20) with a laser beam and determines the copying element from the magnification of the luminous flux of the reflected light. The amount of displacement of 19 is detected, and this detector 23 is provided on the beam portion 12 of the apparatus body 10. The adhesion force of the thin film is measured by the apparatus having the above-mentioned structure as follows.

【0024】 まず、薄膜2を成膜した基板1をその薄膜成膜面を上にして基板支持テーブル 13の上に固定し、薄膜引っ掻き体14をその各突起16の先端が倣い素子19 の探針21の先端より下方にくるように下降させた状態で、基板支持テーブル1 3をZ方向移動機構により上昇させ、基板1上の薄膜2に薄膜引っ掻き体14の 各突起16の先端を接触させる。First, the substrate 1 on which the thin film 2 is deposited is fixed on the substrate support table 13 with the thin film deposition surface facing upward, and the thin film scratching body 14 is searched for by the tip of each protrusion 16 of the copying element 19. The substrate support table 13 is raised by the Z-direction moving mechanism in a state of being lowered below the tip of the needle 21, and the tip of each protrusion 16 of the thin film scratching body 14 is brought into contact with the thin film 2 on the substrate 1. .

【0025】 次に、基板支持テーブル13をY方向移動機構により薄膜引っ掻き体14の基 部から先端に向かう方向に微速度で定速移動させ、この基板支持テーブル13と ともに移動される基板1上の薄膜2の複数箇所を、薄膜引っ掻き体14の各突起 16により一方向に引っ掻く。なお、このときは、倣い素子19の下方に下降さ れた薄膜引っ掻き体14の各突起16だけに薄膜2が接しているため、倣い素子 19は、その探針21が薄膜2から十分に離間している状態で薄膜2の上方を移 動するだけである。Next, the substrate support table 13 is moved at a constant speed in a direction from the base of the thin film scratching body 14 toward the tip thereof by the Y-direction moving mechanism, and the substrate 1 is moved together with the substrate support table 13. The plurality of locations on the thin film 2 are scratched in one direction by the protrusions 16 of the thin film scratching body 14. At this time, since the thin film 2 is in contact with only the respective projections 16 of the thin film scratching body 14 that is lowered below the copying element 19, the probe 21 of the copying element 19 is sufficiently separated from the thin film 2. It only moves above the thin film 2 in the state of being operated.

【0026】 このように薄膜2の複数箇所を薄膜引っ掻き体14の各突起16で引っ掻くと 、薄膜2に、各突起16の移動軌跡に沿った溝状の引っ掻き跡ができる。図4は この状態を示しており、a〜eは各突起16による引っ掻き跡を示している。When the projections 16 of the thin film scratching body 14 are scratched at a plurality of locations on the thin film 2 in this manner, groove-like scratch marks are formed on the thin film 2 along the movement loci of the projections 16. FIG. 4 shows this state, and a to e show scratch marks by the protrusions 16.

【0027】 この場合、各突起16はそれぞれ異なる接触圧で薄膜2に押付けられて薄膜2 を引っ掻くため、薄膜2にできる各引っ掻き跡a〜eの深さは、強い引っ掻き力 (薄膜2に対する突起16の接触圧)で引っ掻かれた引っ掻き跡ほど深くなり、 基板1に対する薄膜2の密着力より強い力で引っ掻かれた箇所には、その部分の 薄膜2が基板1から剥離して、基板1面に達する深さの引っ掻き跡ができる。In this case, since the protrusions 16 are pressed against the thin film 2 with different contact pressures and scratch the thin film 2, the depth of the scratches a to e formed on the thin film 2 depends on the strong scratching force (projection to the thin film 2). 16), the deeper the scratch marks scratched by the contact pressure 16), and the thin film 2 at that portion is peeled off from the substrate 1 at a position scratched by a force stronger than the adhesion of the thin film 2 to the substrate 1. A scratch mark with a depth reaching one side is made.

【0028】 なお、上記引っ掻き跡は、全ての引っ掻き箇所に必ずできるとは限らず、例え ば接触圧が最も小さい突起16で引っ掻かれた箇所には引っ掻き跡ができないこ ともある。It should be noted that the above-mentioned scratch marks are not necessarily formed on all scratched portions, and for example, scratched marks may not be formed on the portion scratched by the protrusion 16 having the smallest contact pressure.

【0029】 このようにして薄膜2の複数箇所を引っ掻いた後は、昇降機構17により薄膜 引っ掻き体14をその各突起16の先端が倣い素子19の探針21の先端より上 方にくるように上昇させて各突起16を薄膜2から離間させるとともに、基板支 持テーブル13をX方向移動機構およびY方向移動機構により移動させて、倣い 素子19の探針21を、薄膜2の全ての引っ掻き箇所を含む領域(図5に破線で 囲んで示した矩形領域)の1つのコーナー部に対向位置させる。After the thin film 2 is scratched at a plurality of positions in this manner, the lifting mechanism 17 moves the thin film scratching body 14 so that the tips of the protrusions 16 of the thin film scratching body 14 are located above the tips of the probes 21 of the copying elements 19. The protrusions 16 are lifted to separate the projections 16 from the thin film 2, and the substrate supporting table 13 is moved by the X-direction moving mechanism and the Y-direction moving mechanism to move the probe 21 of the copying element 19 to all scratching points of the thin film 2. It is positioned so as to face one corner portion of a region including (a rectangular region surrounded by a broken line in FIG. 5).

【0030】 次に、基板支持テーブル13をZ方向移動機構の微動機構によりさらに上昇さ せて、基板1上の薄膜2を倣い素子19に近づけ、倣い素子19の探針21の先 端を薄膜2の表面に近接対向させる。Next, the substrate support table 13 is further raised by the fine movement mechanism of the Z-direction moving mechanism to bring the thin film 2 on the substrate 1 closer to the copying element 19, and the tip of the probe 21 of the copying element 19 is moved to the thin film. The surface of 2 is made to face closely.

【0031】 この場合、探針21の先端と薄膜2の表面との間隔が約0.8nm以下になる と、探針先端の原子と薄膜表面の原子との間にその電子雲相互の干渉による引力 (ロンドン力、静電引力、分散力、ファンデルワーズ力等とも呼ばれる)が生じ 、さらに両者の間隔が0.3nm程度まで小さくなると、個々の電子が狭い領域 に閉じ込められるのを嫌って斥力(交換斥力、パウリ力、反発力等とも呼ばれる )が生じる。In this case, when the distance between the tip of the probe 21 and the surface of the thin film 2 is about 0.8 nm or less, the atoms at the tip of the probe and the atoms on the surface of the thin film 2 are caused by mutual interference of the electron clouds. If attractive force (also called London attractive force, electrostatic attractive force, dispersive force, van der Words force, etc.) occurs and the distance between them becomes smaller to about 0.3 nm, repulsive force (repulsive force) because each electron is confined in a narrow region ( Also called exchange repulsive force, Pauli force, repulsive force, etc.).

【0032】 このため、倣い素子19の探針21は、最終的に、探針先端の原子と薄膜表面 の原子との間の引力と斥力とが釣り合う間隔で薄膜2の表面に近接対向し、また この状態で基板支持テーブル13の上昇を停止すると、倣い素子19の初期の姿 勢(レバー片20の傾き角)が決まる。Therefore, finally, the probe 21 of the copying element 19 closely opposes the surface of the thin film 2 at an interval where the attractive force and the repulsive force between the atom at the probe tip and the atom on the thin film surface balance. Further, when the raising of the substrate support table 13 is stopped in this state, the initial posture of the copying element 19 (the inclination angle of the lever piece 20) is determined.

【0033】 次に、検出器23による倣い素子19の変位検出を開始し、この後、基板支持 テーブル13をY方向移動機構により薄膜2の各引っ掻き跡a〜eの長さ方向に 対してほぼ直交する方向に往復移動させるとともに、このテーブル13をX方向 移動機構により一方向に微速度で移動させることにより、薄膜2の全ての引っ掻 き箇所を含む領域の全域を倣い素子19で走査させる。Next, the displacement detection of the copying element 19 by the detector 23 is started, and thereafter, the substrate support table 13 is moved substantially in the length direction of the scratches a to e of the thin film 2 by the Y-direction moving mechanism. The table 13 is reciprocally moved in a direction orthogonal to each other, and the table 13 is moved at a slight speed in one direction by an X-direction moving mechanism, so that the entire area of the thin film 2 including the scratched portions is scanned by the copying element 19. .

【0034】 図5は倣い素子19による薄膜表面の走査状態を示しており、倣い素子19は 、図に一点鎖線で示した軌跡で薄膜2の表面を走査する。なお、図5では、図を 簡略にするために倣い素子19の走査軌跡を大きなピッチで示したが、実際の走 査軌跡のピッチは、探針21の先端の直径と同程度である。FIG. 5 shows the scanning state of the thin film surface by the copying element 19, and the copying element 19 scans the surface of the thin film 2 along the locus shown by the alternate long and short dash line in the figure. In FIG. 5, the scanning locus of the scanning element 19 is shown with a large pitch for simplification of the drawing, but the pitch of the actual scanning locus is about the same as the diameter of the tip of the probe 21.

【0035】 このように薄膜2の全ての引っ掻き箇所を含む領域の全域を倣い素子19で走 査して行くと、薄膜2との間の原子間力により薄膜表面に対して常に一定の間隔 (原子間に生じる引力と斥力とが釣り合う間隔)で近接対向する探針21が薄膜 2の表面状態に応じて上下動し、これにともなって、基端を一定レベルに支持さ れている倣い素子19が変位(レバー片20の傾き角が変化)する。When the scanning device 19 scans the entire region including all scratched portions of the thin film 2 as described above, an atomic force between the thin film 2 and the thin film 2 always causes a constant gap ( The probe 21 that closely opposes at an interval (at which the attractive force and the repulsive force generated between the atoms are balanced) moves up and down according to the surface state of the thin film 2, and accordingly, the base end is supported at a constant level. 19 is displaced (the tilt angle of the lever piece 20 changes).

【0036】 なお、倣い素子19は、薄膜2の引っ掻き箇所以外の部分を走査しているとき は薄膜自体の表面粗さに応じて僅かに変位するだけであるが、各引っ掻き箇所を 走査しているときは、その箇所の引っ掻き跡の深さに応じて変位する。The scanning element 19 is slightly displaced according to the surface roughness of the thin film itself when scanning a portion other than the scratched portion of the thin film 2, but the scanning element 19 scans each scratched portion. When it is present, it is displaced according to the depth of the scratch mark at that location.

【0037】 そして、倣い素子19の変位は、検出器23により継続して検出されるため、 この検出器23で検出された倣い素子19の変位量から、薄膜2の各引っ掻き箇 所での剥がれの有無を知ることができる。Since the displacement of the scanning element 19 is continuously detected by the detector 23, the amount of displacement of the scanning element 19 detected by the detector 23 is used to remove the thin film 2 at each scratching point. You can know whether or not.

【0038】 なお、検出器23の検出値が薄膜2のどの引っ掻き箇所を倣い素子19が走査 したときの変位量であるかは、例えば、倣い素子19のX方向走査時間と、X方 向走査中における検出値が大きく変化したときの時間との比から求めることがで きるし、薄膜2の剥がれの有無は、倣い素子19の変位量と薄膜2の膜厚(あら かじめ求めておく)との比較によって判定することができる。It should be noted that which scratched portion of the thin film 2 the detection value of the detector 23 is the displacement amount when the scanning element 19 scans is determined by, for example, the scanning time of the scanning element 19 in the X direction and the scanning in the X direction. It can be obtained from the ratio with the time when the detected value changes significantly, and the presence or absence of peeling of the thin film 2 can be determined by the amount of displacement of the copying element 19 and the film thickness of the thin film 2 (preliminarily obtained). It can be determined by comparison with.

【0039】 また、このときは、薄膜引っ掻き体14が倣い素子19の上方に位置している ため、薄膜引っ掻き体14の各突起16は薄膜2から十分に離間して薄膜2の上 方を移動するだけであり、したがって、倣い素子19による薄膜表面の走査中に 薄膜2が薄膜引っ掻き体14で引っ掻かれることはない。Further, at this time, since the thin film scratching body 14 is located above the copying element 19, each protrusion 16 of the thin film scratching body 14 is sufficiently separated from the thin film 2 and moves above the thin film 2. Therefore, the thin film 2 is not scratched by the thin film scratching body 14 during scanning of the thin film surface by the copying element 19.

【0040】 そして、薄膜2の剥がれは、基板1に対する薄膜2の密着力より強い力で引っ 掻かれた箇所に発生するため、薄膜2の各引っ掻き箇所での剥がれの有無が分か れば、薄膜2に対する薄膜引っ掻き体14の各突起16の接触圧(弾性アーム1 5のばね力)から、基板1に対する薄膜2の密着力を求めることができる。Since the peeling of the thin film 2 occurs at a portion scratched by a force stronger than the adhesion of the thin film 2 to the substrate 1, if the presence or absence of peeling at each scratched portion of the thin film 2 is known, From the contact pressure of each projection 16 of the thin film scratching body 14 on the thin film 2 (spring force of the elastic arm 15), the adhesive force of the thin film 2 on the substrate 1 can be obtained.

【0041】 すなわち、例えば図5において、a〜cの引っ掻き跡の上を倣い素子19が走 査したときの変位量が薄膜2の膜厚より小さい値であり、dの引っ掻き跡の上を 倣い素子19が走査したときの変位量が薄膜2の膜厚と同じであったとすると、 薄膜2の密着力は、cの引っ掻き跡を生じさせた突起16の薄膜接触圧より大き く、dの引っ掻き跡を生じさせた突起16の薄膜接触圧より小さい値である。That is, for example, in FIG. 5, the displacement amount when the scanning element 19 scans on the scratch traces a to c is a value smaller than the film thickness of the thin film 2 and is traced on the scratch trace d. Assuming that the displacement amount when the element 19 scans is the same as the film thickness of the thin film 2, the adhesion force of the thin film 2 is larger than the thin film contact pressure of the protrusion 16 that causes the scratch mark of c, and the scratch force of d. It is a value smaller than the thin film contact pressure of the protrusion 16 that caused the mark.

【0042】 すなわち、上記密着力測定装置は、基板1上に成膜した薄膜2を薄膜引っ掻き 体14によって引っ掻き、この薄膜2の引っ掻き箇所を含む領域を倣い素子19 で走査して薄膜1の剥がれの有無を検査するものであり、前記倣い素子19は薄 膜2の表面状態に応じて変位するため、この倣い素子19の変位を検出器23で 検出すれば、薄膜2の引っ掻き箇所での剥がれの有無を知ることができる。That is, in the above-described adhesion measuring device, the thin film 2 formed on the substrate 1 is scratched by the thin film scratching body 14, and the region including the scratched portion of the thin film 2 is scanned by the copying element 19 to peel off the thin film 1. Since the copying element 19 is displaced according to the surface condition of the thin film 2, if the detector 23 detects the displacement of the copying element 19, the thin film 2 is peeled off at the scratched portion. You can know whether or not.

【0043】 そして、この密着力測定装置においては、上記倣い素子19が、薄膜2の表面 に近接対向する探針21の先端と薄膜2との間に働く原子間力によって変位する ため、倣い素子19による薄膜表面の倣い精度が高く、したがって、薄膜2の剥 がれの有無を精度良く検出して、薄膜2の密着力を高精度に評価することができ るし、また膜厚2がnm単位の極く薄い膜の密着力も測定することができる。In this adhesion force measuring apparatus, since the copying element 19 is displaced by the atomic force acting between the tip of the probe 21 and the thin film 2 that are closely opposed to the surface of the thin film 2, the copying element 19 is displaced. The accuracy of scanning the surface of the thin film by 19 is high. Therefore, the presence or absence of peeling of the thin film 2 can be accurately detected, and the adhesion of the thin film 2 can be evaluated with high accuracy. It is also possible to measure the adhesion of very thin films in units.

【0044】 しかも、この密着力測定装置では、上記薄膜引っ掻き体14を、互いに異なる 接触圧で薄膜2に押付けられる複数の突起16によって薄膜2の複数箇所を引っ 掻くものとしているため、複数の引っ掻き力(薄膜2に対する突起16の接触圧 )に対する薄膜2の剥がれの有無を同時に検出することができ、したがって薄膜 2の密着力を能率良く測定することができる。Moreover, in this adhesion measuring device, since the thin film scratching body 14 is scratched at a plurality of locations on the thin film 2 by the plurality of projections 16 pressed against the thin film 2 with different contact pressures, a plurality of scratches is obtained. The presence or absence of peeling of the thin film 2 with respect to the force (contact pressure of the protrusion 16 against the thin film 2) can be detected at the same time, and therefore, the adhesive force of the thin film 2 can be efficiently measured.

【0045】 なお、上記実施例では、薄膜引っ掻き体14の各弾性アーム15を、1枚の極 薄金属板を櫛歯状にプレス加工して形成しているが、これら弾性アーム15は、 ばね定数が異なる金属板で個別に形成してもよく、その場合は、各弾性アーム1 5の長さは同じでもよい。In the above-mentioned embodiment, each elastic arm 15 of the thin film scratching body 14 is formed by pressing one ultra-thin metal plate into a comb shape, but these elastic arms 15 are springs. The elastic arms 15 may be individually formed of metal plates having different constants, and in that case, the elastic arms 15 may have the same length.

【0046】 また、上記実施例では、薄膜2を直線状に引っ掻いているが、薄膜2の引っ掻 きは、例えば蛇行引っ掻きなど任意でよいし、また倣い素子19による走査方向 も任意でよい。Further, in the above embodiment, the thin film 2 is scratched linearly, but scratching of the thin film 2 may be arbitrary, for example, meandering scratching, or the scanning direction by the copying element 19 may be arbitrary.

【0047】 さらに、上記実施例では、基板1上に直接成膜した薄膜2の基板1に対する密 着力の測定について説明したが、本考案の密着力測定装置は、導電膜や絶縁膜等 の下層膜を形成した基板上に成膜した薄膜の前記下層膜に対する密着力の測定に も利用することができる。Further, in the above-mentioned embodiment, the measurement of the adhesion force of the thin film 2 formed directly on the substrate 1 to the substrate 1 was described. However, the adhesion measuring device of the present invention is the lower layer of the conductive film or the insulating film. It can also be used for measuring the adhesion of a thin film formed on a film-formed substrate to the lower layer film.

【0048】[0048]

【考案の効果】[Effect of device]

本考案の密着力測定装置は、互いに異なる接触圧で薄膜に押付けられる複数の 突起を有しこれら突起によって前記薄膜の複数箇所を引っ掻く薄膜引っ掻き体と 、先端に前記薄膜の表面に近接対向する探針を有し基端を一定レベルに支持され て前記薄膜の引っ掻き箇所を含む領域を走査するとともに前記探針の先端と前記 薄膜との間に働く原子間力により前記薄膜の表面状態に応じて変位する薄膜倣い 素子と、前記倣い素子の変位を検出する検出器とを備えたものであるから、基板 上に成膜した薄膜の密着力を高精度に評価できるとともに、膜厚がnm単位の極 く薄い膜の密着力も測定することができ、さらに、複数の引っ掻き力に対する薄 膜の剥がれの有無を同時に検出することができるため、薄膜の密着力を能率良く 測定することができる。 The adhesion force measuring device of the present invention has a plurality of protrusions that are pressed against a thin film by different contact pressures, and a thin film scratching body that scratches a plurality of locations of the thin film by these protrusions, and a probe that is close to the surface of the thin film at its tip. The thin film has a needle supported at a constant level at its proximal end to scan a region including a scratched portion of the thin film, and the atomic force acting between the tip of the probe and the thin film causes the thin film to change in accordance with the surface state of the thin film. Since it is equipped with a displacing thin film scanning element and a detector that detects the displacement of the scanning element, the adhesion of the thin film formed on the substrate can be evaluated with high accuracy, and the film thickness is in nm units. It is possible to measure the adhesion force of an extremely thin film, and it is also possible to detect whether or not the thin film is peeled off due to multiple scratching forces at the same time, so that the adhesion force of a thin film can be measured efficiently. Kill.

【図面の簡単な説明】[Brief description of drawings]

【図1】密着力測定装置の基本構成を示す斜視図。FIG. 1 is a perspective view showing a basic configuration of an adhesion measuring device.

【図2】密着力測定装置の側面図。FIG. 2 is a side view of the adhesion measuring device.

【図3】薄膜引っ掻き体の突起と薄膜倣い素子の探針の
形状を示す拡大斜視図。
FIG. 3 is an enlarged perspective view showing the shapes of the protrusion of the thin film scratching body and the probe of the thin film copying element.

【図4】薄膜を薄膜引っ掻き体で引っ掻いた状態の平面
図。
FIG. 4 is a plan view showing a state where the thin film is scratched by a thin film scratching body.

【図5】薄膜倣い素子による薄膜表面の走査状態を示す
平面図。
FIG. 5 is a plan view showing a scanning state of the thin film surface by the thin film copying element.

【符号の説明】[Explanation of symbols]

1…基板 2…薄膜 10…装置本体 13…基板支持テーブル 14…薄膜引っ掻き体 15…弾性アーム 16…突起 19…薄膜倣い素子 20…レバー片 21…探針 23…検出器 a〜e…引っ掻き跡 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Thin film 10 ... Device body 13 ... Substrate support table 14 ... Thin film scratching body 15 ... Elastic arm 16 ... Projection 19 ... Thin film copying element 20 ... Lever piece 21 ... Probe 23 ... Detector ae ... Scratch marks

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】基板上に成膜された薄膜の密着力を測定す
る装置であって、 互いに異なる接触圧で前記薄膜に押付けられる複数の突
起を有し、これら突起によって前記薄膜の複数箇所を引
っ掻く薄膜引っ掻き体と、 先端に前記薄膜の表面に近接対向する探針を有し基端を
一定レベルに支持されて前記薄膜の引っ掻き箇所を含む
領域を走査するとともに、前記探針の先端と前記薄膜と
の間に働く原子間力により前記薄膜の表面状態に応じて
変位する薄膜倣い素子と、 前記倣い素子の変位を検出する検出器と、 を備えたことを特徴とする薄膜の密着力測定装置。
1. An apparatus for measuring the adhesive force of a thin film formed on a substrate, comprising a plurality of protrusions that are pressed against the thin film with different contact pressures, and these protrusions are used to form a plurality of portions of the thin film. A thin film scratching body for scratching, and a tip having a probe that closely faces the surface of the thin film at the tip and supported at a constant level at the base end to scan a region including the scratched portion of the thin film, and the tip of the probe and the Adhesion force measurement of a thin film, comprising: a thin film copying element that is displaced according to a surface state of the thin film by an atomic force acting between the thin film and a detector that detects displacement of the copying element. apparatus.
JP6294992U 1992-09-08 1992-09-08 Thin film adhesion measuring device Pending JPH0628712U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6294992U JPH0628712U (en) 1992-09-08 1992-09-08 Thin film adhesion measuring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6294992U JPH0628712U (en) 1992-09-08 1992-09-08 Thin film adhesion measuring device

Publications (1)

Publication Number Publication Date
JPH0628712U true JPH0628712U (en) 1994-04-15

Family

ID=13215077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6294992U Pending JPH0628712U (en) 1992-09-08 1992-09-08 Thin film adhesion measuring device

Country Status (1)

Country Link
JP (1) JPH0628712U (en)

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