JPH01262403A - Probe and its manufacture - Google Patents
Probe and its manufactureInfo
- Publication number
- JPH01262403A JPH01262403A JP8902488A JP8902488A JPH01262403A JP H01262403 A JPH01262403 A JP H01262403A JP 8902488 A JP8902488 A JP 8902488A JP 8902488 A JP8902488 A JP 8902488A JP H01262403 A JPH01262403 A JP H01262403A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- probe
- tip
- oxide film
- needle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000523 sample Substances 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 3
- 238000003486 chemical etching Methods 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000000594 atomic force spectroscopy Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はプローブ及びその製造方法に関し、特に原子間
力顕ａｍのプローブとして用いるに好適なプローブ及び
その製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a probe and a method for manufacturing the same, and more particularly to a probe suitable for use as a probe for atomic force spectroscopy (AM) and a method for manufacturing the same.
従来、原子間力検出プローブについては、ヨーロッパフ
イジイクス、レター３（１９８７）第１２８１頁から第
１２８６頁（＋４ｕｒｏｐｈｙｓ 、 １ｃｔｔ 。Conventionally, regarding atomic force detection probes, European Physics, Letter 3 (1987), pages 1281 to 1286 (+4urophys, 1ctt.
３ （１，９８７）ＰＰ１２８１〜１−２８６ ）にお
いて論じられている。3 (1,987) PP 1281-1-286).
第２図は、従来の原子間力検出顕微鏡（八Ｆ Ｍ ）の
構成を示す一般に従来のＳＴＭでは、第１図の１ヘンネ
リンクチツブ３はサンプル２に直接作用する。すなわち
、トンネリングチツブ３とサンプル２間のトンネル電流
が一定となるようにチップ３にフィードバックし、チッ
プ３とサンプル２の距離を保持することによって、サン
プル２の表面形状が計８１１１される。しかし、ＳＴＭ
では、サンプル２や導体でなければならないという制約
があった。FIG. 2 shows the configuration of a conventional atomic force detection microscope (8F M ). Generally, in a conventional STM, the 1-henne link chip 3 in FIG. 1 acts directly on the sample 2 . That is, by feeding back to the chip 3 so that the tunneling current between the tunneling chip 3 and the sample 2 is constant and maintaining the distance between the chip 3 and the sample 2, the surface shape of the sample 2 is determined in total by 8111 times. However, STM
However, there was a restriction that it had to be Sample 2 or a conductor.
原子間力検出顕微鏡は、ＳＴＭの欠点を解消するもので
ある。第２図に示すプレート１の先端は、原子間力をう
けてプレート１がたわみ、先端部とサンプルの距離は一
定に保たれ、サンプル２の形状をトレースすることがで
きる。プレート１に金属を蒸着しておけば、サンプル２
が導体でなくとも、トンネリングチップ３は、プレート
間のトンネル電流を一定に保って変位するようにフィー
ドバックされるのでプレート１を介して、サンプル２の
形状を間接的にトレースすることになる。この場合、サ
ンプル形状を精度よくトレースするためには、プレート
１の先端部を鋭利に加工する必要がある。Atomic force detection microscopes overcome the shortcomings of STM. The tip of the plate 1 shown in FIG. 2 is bent by the atomic force, the distance between the tip and the sample is kept constant, and the shape of the sample 2 can be traced. If metal is deposited on plate 1, sample 2
Even if the tunneling tip 3 is not a conductor, the shape of the sample 2 is traced indirectly through the plate 1 because the tunneling tip 3 is fed back so as to keep the tunneling current between the plates constant and to be displaced. In this case, in order to accurately trace the shape of the sample, it is necessary to sharpen the tip of the plate 1.
しかしながら、従来の技術では、プレート先端のチップ
を製造するのが困難なため、第２図（ｂ）のように長方
形プレートの角部で代用したり、第２図（ｃ）のように
三角形プレートの先端を用いるなどチップの先端が鋭利
に加工されない状態で用いられている。従って、第２図
（ａ）に示すように、プレート１は、被測定物に対して
傾けて２Ｉｌｌｌ定するなどの方法がとられている。こ
のため、従来技術によるプレートを用いた場合には、表
面凹凸のアスペクト比が高い試料では忠実にその表面形
状を表わすことができないこと、また、プレート１がた
わみをより感受しやすい力の方向は、プレート面の法線
方向であるのに対し、従来の方法では、これよりも多少
ずれた方向となっている等の問題がある。However, with conventional technology, it is difficult to manufacture the tip at the tip of the plate, so a corner of a rectangular plate as shown in Figure 2(b) is used instead, or a triangular plate as shown in Figure 2(c) is used instead. The tip of the tip is not sharpened, such as when the tip of the tip is used. Therefore, as shown in FIG. 2(a), a method such as tilting the plate 1 with respect to the object to be measured is used. For this reason, when using a plate according to the prior art, it is impossible to faithfully represent the surface shape of a sample with a high aspect ratio of surface irregularities, and the direction of the force in which the plate 1 is more sensitive to deflection is , which is the normal direction to the plate surface, whereas in the conventional method, the direction is slightly deviated from this direction.
従来の技術では原子間力検出プレートを平面状にしか製
作できず、しかもその先端は十分に鋭利な針状チップと
はなっていない。このため、特に表面の凹凸のアスペク
ト比が高い試料り表面にブロービングするさいに、チッ
プの鋭利さの不足に伴う解像度の低下が避けられないと
いう欠点があった。With conventional technology, the atomic force detection plate can only be manufactured in a flat shape, and the tip thereof does not have a sufficiently sharp needle-like tip. For this reason, especially when blowing a sample surface with a high aspect ratio of surface irregularities, there has been a drawback that a decrease in resolution due to lack of tip sharpness is unavoidable.
本発明の目的は、プレートの先端に、プレート面の法線
方向又はそれに近い方向に鋭利な針状のチップを一体で
形成したプローブおよびその製造方法を提供する。An object of the present invention is to provide a probe in which a sharp needle-like tip is integrally formed at the tip of a plate in the normal direction of the plate surface or in a direction close to the normal direction of the plate surface, and a method for manufacturing the same.
上記１」的は、可撓性を有する酸化珪素又は、窒化珪素
からなるプレートと、該プレートの先端に該プレー１へ
面と異なる角度で該プレートと一体に構成された針状の
チップを有すること、半導体リソグラフィ技術を用いて
Ｓ１ウエハに針の形状を転写するための凹部を形成し、
次いで該凹部が形成された表面に母材と異なる膜を形成
し、その後プレート部を形成し、さらに残ったＳｊをエ
ツチングによって除去することによって達成される。Target 1 above has a plate made of flexible silicon oxide or silicon nitride, and a needle-like tip integrally formed with the plate at a different angle from the plane to the plate 1 at the tip of the plate. Specifically, by using semiconductor lithography technology, a concave portion for transferring the shape of the needle is formed on the S1 wafer.
Next, a film different from the base material is formed on the surface where the recesses are formed, a plate portion is formed after that, and the remaining Sj is removed by etching.
本発明によれば、プレート面に形成した十分に鋭利な針
状のチップを有しているので、例えばチップの先端の原
子が、表面原子との間で原子力を受けるので、プレート
部は発生した原子間力を感受してたわみ、正確にチップ
の先端の原子の受ける力を検出することができる。また
、この場合チップの先端をプレート面から突出して設け
ろことによって原子間力を感受ける性能を向上させるこ
とができる。これらの結果、チップ先端以外の場所の原
子が被８１１１定物の表面原子との間で力を及ぼし合う
ことが極めて少なくなるので、ＡＦ”Ｍのように一定の
力を保ちつつ表面形状を測定する場合に試料表面内に位
置誤差なく１表面形状あるいは力分布等を正確に測定す
ることができる。According to the present invention, since it has a sufficiently sharp needle-like tip formed on the plate surface, for example, the atoms at the tip of the tip receive atomic energy between them and the surface atoms, so that the plate part is generated. It deflects when it senses atomic forces, allowing it to accurately detect the force exerted on the atoms at the tip of the tip. Further, in this case, by providing the tip of the tip so as to protrude from the plate surface, the ability to sense atomic force can be improved. As a result, atoms in locations other than the tip of the tip exert very little force on atoms on the surface of the 8111 object, making it possible to measure the surface shape while maintaining a constant force like AF"M. In this case, the surface shape or force distribution, etc. can be accurately measured without any positional error within the sample surface.
次に本発明のプローブを実施例に基づき説明する。第１
Ｆ閾は、熱酸化膜（ＳｉＯｚ）から成り、先端に突出し
た鋭利な針を有するプローブを示す。Next, the probe of the present invention will be explained based on examples. 1st
The F threshold shows a probe made of thermal oxide film (SiOz) and having a sharp protruding needle at the tip.
すなわち第１図（ａ）は、プレー１一部１の先端に。That is, in Fig. 1(a), the play 1 part 1 is at the tip.
ブロード面外に突出した構造のチップ５を有するＡ ト
” Ｍプローブ示し、第１図（）））、（０）はそれぞ
れ、四角錐状２円錐状のチップ５を有するＡ Ｆ’ Ｍ
プローブを示す。第１図に示したプローブはいずれもプ
レート１の部分で原子間力を受けてたわむＭＩｔ造とな
っている。本構造のように、プレート面外に突出した針
状チップ５を形成することにより、感度の高い八Ｆ Ｍ
プローブとなっている。A F' M probe having a tip 5 with a structure protruding out of the broad plane; FIGS.
Probe shown. All of the probes shown in FIG. 1 are made of MIt, which bends in response to atomic force at the plate 1 portion. As in this structure, by forming the needle-like tip 5 protruding outside the plate surface, high sensitivity can be achieved.
It is a probe.
第７３図にはもう一つのプローブの形状を示す。FIG. 73 shows another probe shape.
本構造の場合は、回転＠６を支点として、構造全体や回
転する機構を有している。このため、針状チップ５が原
子間力をうけた時にプレート１は、たわむことなく１回
転軸６を中心として回転する構造となる。また、ｓ’ｒ
Ｍの針部：３はプレート後部１′の４＆位に追従して一
定の距離を保つことによってサンプルの形状を精度良く
トレースすることができる。トンネリングチツブ３とプ
レート１′の距離を一定に保つ方法としては、トンネル
電流を検出して、その値を一定に保つように、ピエゾ索
子等でトンネリングチツプ３を変位させる方法が考えら
れる。なお、第３図に示すも■造のプローブであれば、
プレート部１と１′の長さ比を変化させることによ−）
て微細な形状を拡大としてトレースすることも可能であ
る。In the case of this structure, the entire structure and a mechanism that rotates are provided with rotation @6 as a fulcrum. Therefore, when the needle tip 5 is subjected to atomic force, the plate 1 rotates about the rotation axis 6 without being deflected. Also, s'r
The needle part 3 of M can trace the shape of the sample with high accuracy by following the position 4& of the rear part 1' of the plate and keeping a constant distance. A possible method for keeping the distance between the tunneling tip 3 and the plate 1' constant is to detect the tunnel current and displace the tunneling tip 3 using a piezo rope or the like so as to keep the value constant. In addition, if the probe shown in Fig. 3 is manufactured by ■,
By changing the length ratio of plate parts 1 and 1')
It is also possible to trace minute shapes by enlarging them.
なおプローブの動きを測定する方法として、１−ユ述の
トンネリングチップを用いる手段の他に、戚プレート１
′に対向して平板ｔ１１極を設け、その間の静電容量の
変化を検出する方法や、該プレート１′にレーザ光を斜
入射させて、その反射光の角度変化をみる方法が考えら
れる。As a method of measuring the movement of the probe, in addition to the method using the tunneling tip described in 1-U, a method using a relative plate 1
Possible methods include a method in which a flat plate t11 pole is provided opposite to the plate 1' and a change in capacitance therebetween is detected, or a method in which a laser beam is obliquely incident on the plate 1' and the angular change in the reflected light is observed.
次に、上述の代表的なプローブの製造方法について述べ
る。第４図は、第１図（ｂ）に示すプローブの製造方法
の説明図である。初めに、Ｓｊウェハ７に酸化膜８を形
成する（第４図（、、））。Next, a method for manufacturing the above-mentioned typical probe will be described. FIG. 4 is an explanatory diagram of a method for manufacturing the probe shown in FIG. 1(b). First, an oxide film 8 is formed on the Sj wafer 7 (FIG. 4(,,)).
ついで、その片面にフオトレジス１へ９を形成す／コ（
第４図（ｂ））、次に露光装置によって露光、現像を行
い四角パターン１０を形成する（第４図（Ｃ））。さら
に、レジスト９をマスクとして、フッ酸およびフッ化ア
ンモニウム溶液の混合液を用いて酸化膜にパターン１１
を形成し、レジストを除去する（第４図（ｄ））、次に
、酸化膜８をマスクとして、ＫＯＨ″５のアルカリ系水
溶液によって異り性エツチングすることにより、 （１
１１）系の而１２から成る凹部を生じる（第４図（Ｃ）
）。Next, form photoresist 1 to 9 on one side of it.
FIG. 4(b)), and then exposure and development are performed using an exposure device to form a square pattern 10 (FIG. 4(C)). Furthermore, using the resist 9 as a mask, a pattern 11 is applied to the oxide film using a mixture of hydrofluoric acid and ammonium fluoride solution.
is formed and the resist is removed (FIG. 4(d)).Next, using the oxide film 8 as a mask, etching is carried out with an alkaline aqueous solution of KOH''5.
11) The structure of the system produces a concavity consisting of 12 (Fig. 4 (C)
).
その後、上部の酸化膜を除去し、再度全面に酸化１摸を
形成する（第４図（ｆ））、次に、同様の工程を経て上
部の酸化膜に、第４図の（ｇ）、（ｇ’）に示すパター
ン８′を形成する。さらに上部の酸化膜にガラス等の基
板１；３を接着し、（第４図（ｈ））、シリコン基板７
をＫ ＯＨ水溶液で除去することによって所望の形状の
プローブを得る（第５図（ｉ））。After that, the upper oxide film is removed and an oxide layer is again formed on the entire surface (Fig. 4(f)).Next, the upper oxide film is coated with the oxide film through the same process as shown in Fig. 4(g). A pattern 8' shown in (g') is formed. Further, a substrate 1 or 3 made of glass or the like is bonded to the upper oxide film (FIG. 4(h)), and a silicon substrate 7 is bonded to the top oxide film.
By removing the probe with a KOH aqueous solution, a probe of the desired shape is obtained (FIG. 5(i)).
最後に、トンネル電流を検出するために、原す開力検出
プレートの上面に、へυ等の金属を蒸着してｒｑ、を性
を付与し、実用に供するＡ ＦＭ用ゾローブが完成する
。Finally, in order to detect the tunnel current, a metal such as υ is vapor-deposited on the upper surface of the original open force detection plate to give it rq properties, thereby completing an AFM Zorobe for practical use.
上記実施例では、第１図（ｂ）に示すプローブの製造方
法について示したが、第１図（ａ）のプローブについて
も同様の方法で！ＩＩ２造呵能である。In the above embodiment, the method for manufacturing the probe shown in FIG. 1(b) was described, but the same method can be used for the probe shown in FIG. 1(a)! II2 Zoan Noh.
一方、第１図（ｃ）のプローブは、第４図（Ｃ）。On the other hand, the probe in FIG. 1(c) is as shown in FIG. 4(C).
（ｄ）で形成するパターン１１を円形とし１次いでＣＦ
ａ等のガス中でドライエツチングを行うことにより、針
状の深みぞを形成できる０次いで酸化膜を形成し、第４
図（ｇ）以降と同様のプロセスを経ることによって第１
図（ｃ）のプローブを得ることができる。なお、第３図
に示すプローブでは、第１図（ａ）と同様のプロセスで
形成１［能である。The pattern 11 formed in (d) is circular and then CF
By performing dry etching in a gas such as a, an oxide film capable of forming needle-shaped deep grooves is formed, and a fourth oxide film is formed.
By going through the same process as shown in Figure (g) onwards, the first
The probe shown in Figure (c) can be obtained. Note that the probe shown in FIG. 3 can be formed by the same process as in FIG. 1(a).
なお実施例では、第１図および第３図に示す構造のプロ
ーブを作るために、第４図で５ｉＯｚをマスクとしたが
、これはＳ ｉ３Ｎ４で代用することもＪ能である。In the example, 5iOz was used as a mask in FIG. 4 in order to make probes having the structures shown in FIGS. 1 and 3, but it is also possible to use Si3N4 instead.
これらの原子間力検出プローブに導電性をもたせて原子
間力による表面形状ｉ１＋’ｌ定とともに電子分光等の
電気計測を行うこともできる。また、以４ニの構造物・
構成を用いた類似装置も本発明の範囲である。By imparting conductivity to these atomic force detection probes, it is possible to perform electrical measurements such as electron spectroscopy as well as determination of the surface shape i1+'l by atomic force. In addition, the following 4 structures and
Similar devices using the configuration are also within the scope of the invention.
以上の実施例から明らかなように、本発明のブ［１−ブ
は高精度の鋭利な突起部と適度のたわみを生じるプレー
ト部からなるプローブを形成できる。As is clear from the above embodiments, the probe 1 of the present invention can be formed into a probe consisting of a sharp protrusion with high precision and a plate portion that is appropriately deflected.
この結果、プレート先端のチップは被ル１ｑ定物の表面
形状を忠実にトレースし、分解能が高く高精度の形状ｌ
ｌｌ’ｌ定が可能となる。As a result, the tip at the tip of the plate faithfully traces the surface shape of the constant object on the surface of the 1q surface, creating a highly accurate shape with high resolution.
ll'l specification becomes possible.
第１図は本発明の実施例を示す５ｉＯｚで形成さ九たプ
ローブの（既観図、第２図は従来の原子間力検出顕微鏡
（ＡＦＭ）を示す構成図、第３図は本発明の他の実施例
を示す５ｉＯｚから成り、原子間力をうけて回転する構
造のプローブの概観図。
第４図は本発明のプローブの製造方法の実施例を示すた
めの断面図である。
１・・・プレー１−１５・・・針状チップ、６・・・回
転軸。Fig. 1 is an external view of a probe made of 5iOz showing an embodiment of the present invention, Fig. 2 is a configuration diagram showing a conventional atomic force detection microscope (AFM), and Fig. 3 is a diagram of a probe made of 5iOz according to the present invention. A general view of a probe made of 5iOz and having a structure that rotates in response to atomic force, showing another embodiment. Fig. 4 is a cross-sectional view showing an embodiment of the probe manufacturing method of the present invention. 1. ...Play 1-15...Needle tip, 6...Rotating axis.
Claims (1)
ートと、該プレートの先端に該プレート面と異なる角度
で該プレートと一体に構成された針状のチップを有する
ことを特徴とするプローブ。 ２、プレートと該プレートの先端に該プレート面と異な
る角度で該プレートと一体に構成された酸化珪素又は窒
化珪素から成る針状のチップと、該プレートを支持し、
その捩りによつて該プレートを剛体的に回転せしめる支
持棒を有して構成されることを特徴とするプローブ。 ３、請求項１又は２記載のプローブの表面の少なくとも
一部を導電性材料で覆つて構成したことを特徴とするプ
ローブ。 ４、請求項１〜３のいずれかに記載のプローブを原子間
や検出用プローブとして用いることを特徴とする原子間
力顕微鏡。 ５、請求項４記載のものにおいて、プローブの偏位を静
電容量型距離検出手段で検知することを特徴とする原子
間力顕微鏡。 ６、請求項４記載のもにおいて、プローブの偏位を光学
的距離検出手段で検知することを特徴とする原子間力顕
微鏡 ７、請求項１に記載のプローブの製造方法において、該
チップを得るためにＳｉウェハに化学エッチングにより
凹部を形成し該凹部の表面に、熱酸化による酸化珪素又
はＣＶＤによる窒化珪素のマスクを形成する工程と、該
マスクをパターニングする工程と、残留したＳｉ部を化
学エッチングで除去する工程から成ることを特徴とする
プローブの製造方法。[Scope of Claims] 1. A plate made of flexible silicon oxide or silicon nitride, and a needle-shaped tip formed integrally with the plate at an angle different from the plate surface at the tip of the plate. A probe featuring: 2. A plate, a needle-shaped tip made of silicon oxide or silicon nitride integrally formed with the plate at an angle different from the plate surface at the tip of the plate, and supporting the plate;
A probe comprising a support rod that rigidly rotates the plate by twisting the support rod. 3. A probe characterized in that the probe according to claim 1 or 2 is constructed by covering at least a portion of the surface with a conductive material. 4. An atomic force microscope, characterized in that the probe according to any one of claims 1 to 3 is used as an interatomic or detection probe. 5. The atomic force microscope according to claim 4, wherein the displacement of the probe is detected by a capacitive distance detection means. 6. An atomic force microscope according to claim 4, characterized in that the deflection of the probe is detected by an optical distance detection means. 7. In the method for manufacturing a probe according to claim 1, obtaining the tip. For this purpose, a recess is formed in the Si wafer by chemical etching, a mask of silicon oxide by thermal oxidation or silicon nitride by CVD is formed on the surface of the recess, a step of patterning the mask, and a step of chemically etching the remaining Si part. A method for manufacturing a probe, comprising a step of removing by etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63089024A JP2656536B2 (en) | 1988-04-13 | 1988-04-13 | Probe and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63089024A JP2656536B2 (en) | 1988-04-13 | 1988-04-13 | Probe and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01262403A true JPH01262403A (en) | 1989-10-19 |
| JP2656536B2 JP2656536B2 (en) | 1997-09-24 |
Family
ID=13959345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63089024A Expired - Lifetime JP2656536B2 (en) | 1988-04-13 | 1988-04-13 | Probe and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2656536B2 (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04233128A (en) * | 1990-07-25 | 1992-08-21 | Internatl Business Mach Corp <Ibm> | Precision instrument sensor for profil measurement of afm/stm/mfm and its manufacture |
| US5537863A (en) * | 1993-07-15 | 1996-07-23 | Nikon Corporation | Scanning probe microscope having a cantilever used therein |
| US5717132A (en) * | 1995-04-26 | 1998-02-10 | Nikon Corporation | Cantilever and process for fabricating it |
| WO2000028299A1 (en) * | 1998-11-11 | 2000-05-18 | Seiko Instruments Inc. | Optical cantilever and production method therefor |
| US6246054B1 (en) | 1997-06-10 | 2001-06-12 | Olympus Optical Co., Ltd. | Scanning probe microscope suitable for observing the sidewalls of steps in a specimen and measuring the tilt angle of the sidewalls |
| WO2003046473A1 (en) * | 2001-11-28 | 2003-06-05 | General Nanotechnology Llc | Method and apparatus for micromachines, microstructures, nanomachines and nanostructures |
| US6694805B2 (en) | 2001-04-18 | 2004-02-24 | Olympus Optical Co., Ltd. | Cantilever for scanning probe microscopy |
| EP2036096A1 (en) * | 2006-06-02 | 2009-03-18 | Victor B. Kley | High-speed measurement, analysis and imaging systems and methods for length scales from meter to sub-nanometer |
| US8776261B2 (en) | 2005-05-10 | 2014-07-08 | Victor B. Kley | Tool tips with scanning probe microscopy and/or atomic force microscopy applications |
| US9075082B2 (en) | 2002-03-07 | 2015-07-07 | Victor B. Kley | Fluid delivery for scanning probe microscopy |
| US9423693B1 (en) | 2005-05-10 | 2016-08-23 | Victor B. Kley | In-plane scanning probe microscopy tips and tools for wafers and substrates with diverse designs on one wafer or substrate |
| US10042263B1 (en) | 2013-03-15 | 2018-08-07 | Victor B. Kley | In-plane scanning probe microscopy tips and tools for wafers and substrates with diverse designs on one wafer or substrate |
| US10610995B2 (en) | 1998-01-21 | 2020-04-07 | Victor B. Kley | Method and apparatus for nanolapping |
| WO2020227222A1 (en) | 2019-05-03 | 2020-11-12 | Bruker Nano, Inc. | Torsion wing probe assembly |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62130302A (en) * | 1985-11-26 | 1987-06-12 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method and device for forming image of surface of sample |
| JPS62156502A (en) * | 1985-12-27 | 1987-07-11 | Kyocera Corp | Minute displacement measuring head |
| JPS63309802A (en) * | 1987-05-12 | 1988-12-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Interatomic power microscope |
-
1988
- 1988-04-13 JP JP63089024A patent/JP2656536B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62130302A (en) * | 1985-11-26 | 1987-06-12 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method and device for forming image of surface of sample |
| JPS62156502A (en) * | 1985-12-27 | 1987-07-11 | Kyocera Corp | Minute displacement measuring head |
| JPS63309802A (en) * | 1987-05-12 | 1988-12-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Interatomic power microscope |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04233128A (en) * | 1990-07-25 | 1992-08-21 | Internatl Business Mach Corp <Ibm> | Precision instrument sensor for profil measurement of afm/stm/mfm and its manufacture |
| US5537863A (en) * | 1993-07-15 | 1996-07-23 | Nikon Corporation | Scanning probe microscope having a cantilever used therein |
| US5717132A (en) * | 1995-04-26 | 1998-02-10 | Nikon Corporation | Cantilever and process for fabricating it |
| US6246054B1 (en) | 1997-06-10 | 2001-06-12 | Olympus Optical Co., Ltd. | Scanning probe microscope suitable for observing the sidewalls of steps in a specimen and measuring the tilt angle of the sidewalls |
| US10610995B2 (en) | 1998-01-21 | 2020-04-07 | Victor B. Kley | Method and apparatus for nanolapping |
| WO2000028299A1 (en) * | 1998-11-11 | 2000-05-18 | Seiko Instruments Inc. | Optical cantilever and production method therefor |
| EP1531327A1 (en) * | 1998-11-11 | 2005-05-18 | Seiko Instruments Inc. | SOM cantilever with hole with tip filling with a projected shape |
| US6694805B2 (en) | 2001-04-18 | 2004-02-24 | Olympus Optical Co., Ltd. | Cantilever for scanning probe microscopy |
| US6813937B2 (en) | 2001-11-28 | 2004-11-09 | General Nanotechnology Llc | Method and apparatus for micromachines, microstructures, nanomachines and nanostructures |
| WO2003046473A1 (en) * | 2001-11-28 | 2003-06-05 | General Nanotechnology Llc | Method and apparatus for micromachines, microstructures, nanomachines and nanostructures |
| US9075082B2 (en) | 2002-03-07 | 2015-07-07 | Victor B. Kley | Fluid delivery for scanning probe microscopy |
| US9423693B1 (en) | 2005-05-10 | 2016-08-23 | Victor B. Kley | In-plane scanning probe microscopy tips and tools for wafers and substrates with diverse designs on one wafer or substrate |
| US8776261B2 (en) | 2005-05-10 | 2014-07-08 | Victor B. Kley | Tool tips with scanning probe microscopy and/or atomic force microscopy applications |
| EP2036096A4 (en) * | 2006-06-02 | 2009-12-02 | Victor B Kley | High-speed measurement, analysis and imaging systems and methods for length scales from meter to sub-nanometer |
| US7784107B2 (en) | 2006-06-02 | 2010-08-24 | Victor B. Kley | High speed measurement, analysis and imaging systems and methods for length scales from meter to sub-nanometer |
| EP2036096A1 (en) * | 2006-06-02 | 2009-03-18 | Victor B. Kley | High-speed measurement, analysis and imaging systems and methods for length scales from meter to sub-nanometer |
| US10042263B1 (en) | 2013-03-15 | 2018-08-07 | Victor B. Kley | In-plane scanning probe microscopy tips and tools for wafers and substrates with diverse designs on one wafer or substrate |
| WO2020227222A1 (en) | 2019-05-03 | 2020-11-12 | Bruker Nano, Inc. | Torsion wing probe assembly |
| CN114026438A (en) * | 2019-05-03 | 2022-02-08 | 布鲁克纳米公司 | Twist wing probe assembly |
| JP2022530987A (en) * | 2019-05-03 | 2022-07-05 | ブルカー ナノ インコーポレイテッド | Torsion wing probe assembly |
| EP3963341A4 (en) * | 2019-05-03 | 2023-01-18 | Bruker Nano, Inc. | Torsion wing probe assembly |
| CN114026438B (en) * | 2019-05-03 | 2024-09-24 | 布鲁克纳米公司 | Torsion wing probe assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2656536B2 (en) | 1997-09-24 |
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| EXPY | Cancellation because of completion of term |