JPH06283493A - Substrate cooling device - Google Patents

Substrate cooling device

Info

Publication number
JPH06283493A
JPH06283493A JP9533793A JP9533793A JPH06283493A JP H06283493 A JPH06283493 A JP H06283493A JP 9533793 A JP9533793 A JP 9533793A JP 9533793 A JP9533793 A JP 9533793A JP H06283493 A JPH06283493 A JP H06283493A
Authority
JP
Japan
Prior art keywords
substrate
cooling
temperature
cooled
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9533793A
Other languages
Japanese (ja)
Inventor
昌明 ▲藪▼田
Masaaki Yabuta
Yoshihiro Koyama
芳弘 小山
Mutsumi Hirose
睦 廣瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP9533793A priority Critical patent/JPH06283493A/en
Publication of JPH06283493A publication Critical patent/JPH06283493A/en
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To cool a substrate treated at a high temperature accurately at a target temperature at high speed while improving the uniformity of in-plane temperature distribution after the cooling of the substrate. CONSTITUTION:Peltier elements 14... are mounted between a substrate base plate 10, in which a substrate is placed on a top face, and a coolant flowing type heat-exchanging means flowing a coolant so that one heat-exchanging surface is brought into contact with the substrate base plate 10 and the other heat-exchanging surface is brought into contact with the coolant flowing type heat-exchanging means. The driving of the Peltier elements 14... is controlled, the substrate is quenched at a cooling pre-stage while quenching is stopped at a cooling post-stage, and the substrate is cooled accurately at a target temperature to be cooled.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体ウエハ、フォト
マスク用のガラス基板、液晶表示装置用のガラス基板、
光ディスク用の基板等の基板を、フォトリソグラフィー
工程の中で、フォトレジスト液塗布や現像工程の前後に
おいて高温に加熱処理された基板を常温付近の目標温度
に冷却するための基板冷却装置に関し、特に、基板にお
ける面内均一性の良好な状態で冷却するために、基板を
熱拡散伝導用の基板載置板の上面に載置ないし近接載置
し、その基板載置板を介して冷却する基板冷却装置に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display device,
A substrate cooling device for cooling a substrate such as a substrate for an optical disk to a target temperature near room temperature, which has been heated to a high temperature before and after a photoresist solution coating or developing process in a photolithography process, In order to cool the substrate with good in-plane uniformity, the substrate is placed on or close to the upper surface of the substrate placement plate for heat diffusion conduction, and the substrate is cooled through the substrate placement plate. Regarding a cooling device.

【0002】[0002]

【従来の技術】従来の基板冷却装置としては、次のよう
なものがあった。 A.第1従来例 特開昭59−48925号公報に開示されているよう
に、所望する冷却温度より低温の冷却液を通す配管を埋
設した冷却板上に基板を載置し、冷却板を熱拡散伝導用
の基板載置板として基板を冷却する。 B.第2従来例 実開昭63−46840号公報に開示されているよう
に、基板を載置する基板載置板の下面に、この基板載置
板下面に沿って所望の冷却温度とほぼ同温の恒温液を放
流する放流タンクを設けて基板を冷却する。
2. Description of the Related Art The following is a conventional substrate cooling device. A. First Conventional Example As disclosed in Japanese Patent Laid-Open No. 59-48925, a substrate is placed on a cooling plate in which a pipe for passing a cooling liquid having a temperature lower than a desired cooling temperature is embedded, and the cooling plate is thermally diffused. The substrate is cooled as a substrate mounting plate for conduction. B. Second Conventional Example As disclosed in Japanese Utility Model Laid-Open No. 63-46840, the temperature is substantially the same as the desired cooling temperature on the lower surface of the substrate mounting plate on which the substrate is mounted and along the lower surface of the substrate mounting plate. The substrate is cooled by providing a discharge tank for discharging the constant temperature liquid.

【0003】[0003]

【発明が解決しようとする課題】ところで、基板冷却装
置では、加熱された基板を1枚づつ次々と受け入れて冷
却処理を繰り返すが、この1枚ごとの冷却処理に際し、
基板載置板は、基板を載置した直後では、高温の基板か
らの熱を受けて急激に昇温される。その後、冷却液によ
る吸熱量が基板からの加熱量よりも多くなって、冷却液
による吸熱の作用が打ち勝つようになった時点から降温
に転じ、最終的に目標冷却温度に到達するといったよう
に昇降温サイクルを繰り返す。
By the way, in the substrate cooling device, the heated substrates are received one after another and the cooling process is repeated. In the cooling process for each one of the substrates,
Immediately after mounting the substrate, the substrate mounting plate receives the heat from the high temperature substrate and is rapidly heated. After that, when the amount of heat absorbed by the cooling liquid becomes larger than the amount of heat from the substrate and the action of the heat absorption by the cooling liquid begins to overcome, the temperature starts to fall and finally the target cooling temperature is reached. Repeat the temperature cycle.

【0004】このような状況下で冷却処理速度を向上さ
せようとするためには、昇降温サイクルの周期を短くす
ること、すなわち、基板を載置した直後である昇降温サ
イクルの初段において基板載置板を急速に冷却すること
により、基板載置板が昇温するのを少なくすることが望
まれる。基板載置板が昇温すると、基板載置板と基板と
の温度差が小さくて基板を冷却する速度が低下するから
である。
In order to improve the cooling processing speed under such a circumstance, the cycle of the temperature raising / lowering cycle is shortened, that is, the substrate is placed at the first stage of the temperature raising / lowering cycle immediately after placing the substrate. It is desirable to reduce the temperature rise of the substrate mounting plate by rapidly cooling the mounting plate. This is because when the temperature of the substrate mounting plate rises, the temperature difference between the substrate mounting plate and the substrate becomes small and the cooling rate of the substrate decreases.

【0005】また、歩留り向上のために、冷却処理にお
いて基板における面内均一性と、各基板ごとの処理温度
の均一性が厳しく求められる結果、昇降温サイクルの終
段で、目標冷却温度に対して過不足無く正確に基板を冷
却することが望まれる。
Further, in order to improve the yield, in-plane uniformity of the substrate and uniformity of the processing temperature of each substrate are strictly required in the cooling process, and as a result, the target cooling temperature is not reached at the final stage of the temperature raising / lowering cycle. It is desired that the substrate be cooled accurately without excess and deficiency.

【0006】しかしながら、前述した第1および第2従
来例では、いずれにおいても基板を急速にかつ正確に冷
却することは困難であった。
However, in any of the above-mentioned first and second conventional examples, it was difficult to cool the substrate rapidly and accurately.

【0007】すなわち、第1従来例では、基板を1枚1
枚受け入れるたびに、昇降温サイクルの初段では、急速
に冷却するように冷媒を大量に流し、一方、昇降温サイ
クルの終段では、基板を目標冷却温度以下にまで冷却し
ないように、冷媒の流れを急に停止するか絞るといった
ように、基板の1枚1枚の冷却処理ごとに、毎回冷媒の
流量を極めて俊敏に調節しなければならず、極めて困難
な流量制御を余儀無くされる。また、上述のような流量
制御を行えたとしても、冷媒の流れを停止した時点で、
基板載置板に埋設した配管内に停留する冷媒の吸熱作用
に起因して基板の降温作用を瞬時に停止させることはで
きず、基板を目標冷却温度に正確に冷却することは困難
であった。
That is, in the first conventional example, one substrate
Each time a wafer is received, the first stage of the heating / cooling cycle causes a large amount of refrigerant to flow rapidly, while the final stage of the heating / cooling cycle does not cool the substrate below the target cooling temperature. The flow rate of the refrigerant must be adjusted very quickly every time the cooling process is performed on each of the substrates, such as by suddenly stopping or narrowing down the flow rate, which necessitates extremely difficult flow rate control. Further, even if the flow rate control as described above can be performed, at the time when the flow of the refrigerant is stopped,
Due to the endothermic action of the refrigerant staying in the pipe embedded in the substrate mounting plate, the temperature lowering action of the substrate cannot be stopped instantaneously, and it was difficult to accurately cool the substrate to the target cooling temperature. .

【0008】一方、第2従来例では、恒温液の循環流量
を多くすることによって、急速に冷却することは可能で
あるが、循環する恒温液の温度が、冷却目標温度と同じ
か僅かに低い温度であり、恒温液の大量循環で冷却を強
力にできるのは、温度差が大きい昇降温サイクルの初段
に過ぎず、基板の温度が冷却目標温度近くまで降下した
終段では、基板載置板と液との温度差が小さくなるため
に冷却速度が遅くなり、基板を目標冷却温度に正確に冷
却するのに時間を要する。
On the other hand, in the second conventional example, it is possible to cool rapidly by increasing the circulation flow rate of the constant temperature liquid, but the temperature of the circulating constant temperature liquid is equal to or slightly lower than the cooling target temperature. It is the temperature, and it is only the first stage of the temperature raising / lowering cycle where the temperature difference is large that strong cooling can be achieved by circulating a large amount of constant temperature liquid, and at the final stage when the temperature of the substrate drops to near the cooling target temperature, Since the temperature difference between the substrate and the liquid becomes small, the cooling rate becomes slow, and it takes time to accurately cool the substrate to the target cooling temperature.

【0009】本発明は、このような事情に鑑みてなされ
たものであって、高温処理された基板を目標温度に高速
でかつ正確に冷却するとともに、その冷却後における面
内温度分布および各基板ごとの処理温度の均一性を向上
できるようにすることを目的とする。
The present invention has been made in view of the above circumstances, and cools a high-temperature-processed substrate to a target temperature at high speed and accurately, and the in-plane temperature distribution after cooling and each substrate. It is an object of the present invention to improve the uniformity of processing temperature for each.

【0010】[0010]

【課題を解決するための手段】本発明は、上述のような
目的を達成するために、基板を上面に載置ないし近接載
置して冷却する基板冷却装置において、基板を上面に載
置ないし近接載置する基板載置板と、冷却液を流通させ
る冷却液流通型熱交換手段と、一方の熱交換面が基板載
置板に接し、他方の熱交換面が冷却液流通型熱交換手段
に接するペルチェ素子とから構成する。
In order to achieve the above-mentioned object, the present invention provides a substrate cooling apparatus for cooling a substrate by placing it on the upper surface or by closely placing it on the upper surface. A substrate mounting plate to be mounted closely, a cooling liquid flow type heat exchange means for circulating a cooling liquid, one heat exchange surface is in contact with the substrate mounting plate, and the other heat exchange surface is a cooling liquid flow type heat exchange means. It is composed of a Peltier device in contact with.

【0011】[0011]

【作用】本発明の基板冷却装置の構成によれば、ペルチ
ェ素子を駆動するに伴い、基板載置板に接する側の温度
を冷却液の温度よりも低温にでき、従来の冷却液との熱
交換だけで基板から吸熱して冷却する場合に比べ、急速
に基板を冷却することができ、また、目標温度に近づい
たときには、ペルチェ素子の駆動を制御して基板から吸
熱する程度を自在に操作することにより、基板を載置し
た基板載置板に接する側の温度を急速にかつ正確に目標
温度に変更することができる。
According to the structure of the substrate cooling apparatus of the present invention, the temperature on the side in contact with the substrate mounting plate can be made lower than the temperature of the cooling liquid as the Peltier element is driven, and the heat of the conventional cooling liquid can be reduced. Compared to the case of absorbing heat from the substrate to cool it only by exchanging it, the substrate can be cooled more rapidly, and when the target temperature is approached, the drive of the Peltier element is controlled to freely control the degree of heat absorption from the substrate. By doing so, the temperature on the side in contact with the substrate mounting plate on which the substrate is mounted can be rapidly and accurately changed to the target temperature.

【0012】[0012]

【実施例】次に、本発明の実施例を図面に基づいて詳細
に説明する。
Embodiments of the present invention will now be described in detail with reference to the drawings.

【0013】図1は、本発明に係る基板冷却装置の実施
例を示す全体縦断面図であり、ハウジング2内の下方に
基板冷却装置3が設けられ、その上方に基板加熱装置4
が設けられている。
FIG. 1 is an overall vertical sectional view showing an embodiment of a substrate cooling device according to the present invention. A substrate cooling device 3 is provided in a lower part of a housing 2 and a substrate heating device 4 is provided above it.
Is provided.

【0014】基板冷却装置3は、処理室5内に冷却プレ
ート6を設けるとともに、その冷却プレート6に形成し
た貫通孔7を通じて基板支持ピン8を昇降可能に設けて
構成され、基板支持ピン8を上昇させた状態で基板搬送
ロボット(図示せず)により基板Wの搬入・搬出を行
い、そして、基板支持ピン8を下降させることにより、
基板Wを冷却プレート6上に載置して支持できるように
なっている。図示しないが、基板支持ピン8…を一体的
に保持した支持部材9にエアシリンダが連動連結され、
そのエアシリンダの伸縮によって基板支持ピン8…を昇
降するように構成されている。
The substrate cooling device 3 is provided with a cooling plate 6 in the processing chamber 5 and a substrate supporting pin 8 which can be moved up and down through a through hole 7 formed in the cooling plate 6. By loading and unloading the substrate W by the substrate transport robot (not shown) in the raised state, and by lowering the substrate support pin 8,
The substrate W can be placed and supported on the cooling plate 6. Although not shown, an air cylinder is interlocked with a support member 9 that integrally holds the substrate support pins 8 ...
The substrate support pins 8 are moved up and down by the expansion and contraction of the air cylinder.

【0015】冷却プレート6は、基板Wを載置するアル
ミ製の基板載置板10と、図2の平面図に示すように、
アルミ製の水冷式の水冷板13に第1の給水管11と第
1の排水管12とを接続して冷却液を流通させるように
構成した冷却液流通型熱交換手段と、基板載置板10と
水冷板13との間に、一方の熱交換面が基板載置板10
に接し、他方の熱交換面が水冷板13に接するように介
在された急冷用のペルチェ素子14…とから構成されて
いる。図中15は、基板載置板10に埋め込まれ、基板
載置板10の温度を測定する測温抵抗素子を示してい
る。
As shown in the plan view of FIG. 2, the cooling plate 6 is a substrate mounting plate 10 made of aluminum on which the substrate W is mounted.
Cooling liquid circulation type heat exchange means configured to connect a first water supply pipe 11 and a first drain pipe 12 to a water cooling plate 13 of aluminum water cooling type, and a substrate mounting plate Between the water cooling plate 10 and the water cooling plate 13, one heat exchange surface
And a Peltier element 14 for rapid cooling interposed so that the other heat exchange surface is in contact with the water cooling plate 13. In the figure, reference numeral 15 indicates a temperature measuring resistance element which is embedded in the substrate mounting plate 10 and measures the temperature of the substrate mounting plate 10.

【0016】ペルチェ素子14…が電流制御器16に接
続されるとともにその電流制御器16がマイクロコンピ
ュータ17に接続され、更に、測温抵抗素子15で測定
された温度に基づく温度信号を出力する温度検出器本体
18がマイクロコンピュータ17に接続されている。
The Peltier elements 14 ... Are connected to a current controller 16 and the current controller 16 is connected to a microcomputer 17, and a temperature for outputting a temperature signal based on the temperature measured by the temperature measuring resistance element 15 is output. The detector body 18 is connected to the microcomputer 17.

【0017】マイクロコンピュータ17では、基板Wを
基板載置板10に載置した後、その温度が設定温度にな
るまでは急冷信号を出力してペルチェ素子14…に大き
な電流を流し、そして、設定温度になった後には、急冷
停止信号を出力してペルチェ素子14…に流す電流を減
少させるように制御するようになっており、冷却初段で
は基板Wを急冷し、一方、目標温度に近づいた冷却終段
では、急冷を停止して基板Wを正確に目標温度まで冷却
し、かつ、目標温度よりも低温に冷却することがないよ
うに制御し、全体として、急速にかつ正確に基板Wを目
標温度まで冷却できるように構成されている。
In the microcomputer 17, after the substrate W is placed on the substrate placing plate 10, a rapid cooling signal is output until a high temperature is reached and a large current is passed through the Peltier elements 14 ... After the temperature is reached, a quenching stop signal is output to control so as to reduce the current flowing through the Peltier elements 14 ..., The substrate W is rapidly cooled in the first stage of cooling, and the target temperature is approached. At the final stage of cooling, the rapid cooling is stopped to accurately cool the substrate W to the target temperature, and control is performed so as not to cool the substrate W to a temperature lower than the target temperature. It is configured to be cooled to the target temperature.

【0018】処理室5内の天井に、第2の給水管19お
よび第2の排水管20を接続した水冷式のアルミ製の副
冷却プレート21が設けられ、処理室5内の、冷却プレ
ート6上に載置された基板Wの上方となる処理室5内の
雰囲気の温度を、冷却プレート6で基板Wを冷却しよう
とする目標温度(例えば、20℃)と同じ温度に冷却する
ように構成されている。
A water-cooled aluminum sub-cooling plate 21 connected to the second water supply pipe 19 and the second drain pipe 20 is provided on the ceiling of the processing chamber 5, and the cooling plate 6 in the processing chamber 5 is provided. The temperature of the atmosphere inside the processing chamber 5 above the substrate W placed on it is cooled to the same temperature as the target temperature (for example, 20 ° C.) for cooling the substrate W by the cooling plate 6. Has been done.

【0019】基板加熱装置4は、処理室22内に、板状
ヒータなどの加熱手段を備えた加熱プレート23を備え
て構成され、基板冷却装置3におけると同様に、基板支
持ピンの昇降と搬送ロボットとにより基板Wを搬入・搬
出するとともに、搬入した基板Wを加熱プレート23に
載置して高温(例えば、 150℃)で加熱処理するように
なっている。
The substrate heating device 4 comprises a heating plate 23 provided with a heating means such as a plate heater in the processing chamber 22. As in the substrate cooling device 3, the substrate support pins are moved up and down and transported. The substrate W is loaded and unloaded by a robot, and the loaded substrate W is placed on the heating plate 23 and heat-treated at a high temperature (for example, 150 ° C.).

【0020】上記実施例では、副冷却プレート21を処
理室5の天井側に設けることにより、基板加熱装置4で
高温処理された基板Wを基板冷却装置3で常温などの目
標温度まで冷却するときに、処理室5内の雰囲気温度を
副冷却プレート21で目標温度まで冷却し、冷却プレー
ト6によって基板Wが目標温度まで冷却される間に雰囲
気温度との温度勾配を発生させず、周囲から基板Wに熱
を供給することなく基板Wを高速で冷却するとともに、
その冷却後における基板Wの面内温度分布の均一性を一
層向上できるように構成しているが、本発明としては、
副冷却プレート21を設けないものでも良い。
In the above-described embodiment, when the sub-cooling plate 21 is provided on the ceiling side of the processing chamber 5, the substrate W which has been subjected to high temperature processing by the substrate heating device 4 is cooled by the substrate cooling device 3 to a target temperature such as room temperature. In addition, the ambient temperature in the processing chamber 5 is cooled to the target temperature by the sub-cooling plate 21, and while the substrate W is cooled to the target temperature by the cooling plate 6, a temperature gradient from the ambient temperature is not generated, and the substrate from the surroundings While cooling the substrate W at high speed without supplying heat to W,
Although it is configured to further improve the uniformity of the in-plane temperature distribution of the substrate W after the cooling, the present invention provides:
The sub-cooling plate 21 may not be provided.

【0021】また、上記実施例では、基板Wを冷却プレ
ート6上に直接載置して支持するようにしたが、例え
ば、冷却プレート6に所定の深さの有底の穴を複数形成
し、この穴に穴の深さより若干大径の直径数百ミクロン
のセラミックボールを嵌入した構成により、そのセラミ
ックボールの上に基板Wを載せ、冷却プレート6と基板
Wとの間に所定の微小な隙間を保ち、基板Wを近接載置
する状態で支持するようにしても良い(図示せず)。
In the above embodiment, the substrate W is placed directly on the cooling plate 6 to be supported, but for example, a plurality of bottomed holes having a predetermined depth are formed in the cooling plate 6, A ceramic ball having a diameter of several hundreds of microns, which is slightly larger than the depth of the hole, is fitted into this hole, so that the substrate W is placed on the ceramic ball and a predetermined minute gap is provided between the cooling plate 6 and the substrate W. The substrate W may be supported in a state of being closely mounted (not shown).

【0022】[0022]

【発明の効果】以上説明したように、本発明の基板冷却
装置によれば、ペルチェ素子の駆動制御により、高温に
加熱された基板を頻繁に受け入れて冷却しても、その冷
却処理の初段では、冷却液より低温に冷却して急速に冷
却でき、しかも、冷却処理の終段では、基板が目標温度
を越えて冷却されすぎることがないように正確に目標温
度に冷却でき、高温処理された基板を目標温度に高速で
かつ正確に冷却できて、処理速度が高く、かつ、各基板
ごとの処理温度の均一性が高く、生産性も向上できるよ
うになった。
As described above, according to the substrate cooling apparatus of the present invention, even if the substrate heated to a high temperature is frequently received and cooled by the drive control of the Peltier element, the cooling is not performed in the first stage of the cooling process. , It can be cooled to a lower temperature than the cooling liquid and can be cooled rapidly, and at the final stage of the cooling process, the substrate can be accurately cooled to the target temperature so that it does not exceed the target temperature and is cooled too much. The substrate can be cooled to the target temperature quickly and accurately, the processing speed is high, the processing temperature is uniform for each substrate, and the productivity can be improved.

【0023】そのうえ、基板をペルチェ素子で直接冷却
するのでは無く、基板を基板載置板を介して冷却するか
ら、冷却後における面内温度分布の均一性を向上できる
ようになった。
In addition, since the substrate is not directly cooled by the Peltier device but is cooled through the substrate mounting plate, it is possible to improve the uniformity of the in-plane temperature distribution after cooling.

【0024】更に、ペルチェ素子の放熱側を冷却液流通
型熱交換手段による冷却液の流通で冷却するから、空冷
するのとは違って、空冷機器の使用に伴う空冷ファンの
回転に起因する発塵の発生が無く、クリーンルームにお
いてダウンフローするように管理された周辺の空気の流
れを空冷ファンで乱すことが無く、品質を向上するうえ
で極めて有用である。
Further, since the heat radiation side of the Peltier element is cooled by the flow of the cooling liquid by the cooling liquid flow type heat exchange means, unlike the case of air cooling, the heat generated by the rotation of the air cooling fan accompanying the use of the air cooling device is generated. It is very useful for improving quality without generating dust and disturbing the surrounding air flow controlled to downflow in a clean room by an air-cooling fan.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る基板冷却装置の実施例を示す全体
縦断面図である。
FIG. 1 is an overall vertical cross-sectional view showing an embodiment of a substrate cooling device according to the present invention.

【図2】要部の模式的平面図である。FIG. 2 is a schematic plan view of a main part.

【符号の説明】[Explanation of symbols]

3…基板冷却装置 10…基板載置板 11…第1の給水管 12…第2の排水管 13…水冷板 14…ペルチェ素子 W…基板 3 ... Substrate cooling device 10 ... Substrate mounting plate 11 ... First water supply pipe 12 ... Second drain pipe 13 ... Water cooling plate 14 ... Peltier element W ... Substrate

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 基板を上面に載置ないし近接載置して冷
却する基板冷却装置において、 前記基板を上面に載置ないし近接載置する基板載置板
と、 冷却液を流通させる冷却液流通型熱交換手段と、 一方の熱交換面が前記基板載置板に接し、他方の熱交換
面が前記冷却液流通型熱交換手段に接するペルチェ素子
と、 から構成したことを特徴とする基板冷却装置。
1. A substrate cooling device for cooling a substrate by placing it on the upper surface or by closely placing it on a top surface, and a substrate mounting plate on which the substrate is placed on or by the proximity of a substrate, and a cooling liquid flower for circulating a cooling liquid. And a Peltier element having one heat exchange surface in contact with the substrate mounting plate and the other heat exchange surface in contact with the cooling liquid circulation type heat exchange means. apparatus.
JP9533793A 1993-03-29 1993-03-29 Substrate cooling device Pending JPH06283493A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9533793A JPH06283493A (en) 1993-03-29 1993-03-29 Substrate cooling device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9533793A JPH06283493A (en) 1993-03-29 1993-03-29 Substrate cooling device

Publications (1)

Publication Number Publication Date
JPH06283493A true JPH06283493A (en) 1994-10-07

Family

ID=14134901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9533793A Pending JPH06283493A (en) 1993-03-29 1993-03-29 Substrate cooling device

Country Status (1)

Country Link
JP (1) JPH06283493A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997009462A1 (en) * 1995-09-06 1997-03-13 Minnesota Mining And Manufacturing Company Substrate fixture
JP2002020868A (en) * 2000-07-04 2002-01-23 Anelva Corp Thin film deposition system
KR100603925B1 (en) * 1999-01-13 2006-07-24 삼성전자주식회사 Ashing equipment for use of semiconductor fabrication
JP2008034520A (en) * 2006-07-27 2008-02-14 Daikin Ind Ltd Substrate cooling device
US7368014B2 (en) 2001-08-09 2008-05-06 Micron Technology, Inc. Variable temperature deposition methods
JP2011117085A (en) * 2011-03-10 2011-06-16 Canon Anelva Corp Load-lock chamber and thin film forming apparatus having the same
JP2014165283A (en) * 2013-02-22 2014-09-08 Nissin Ion Equipment Co Ltd Ion beam irradiator and substrate cooling method
CN111979530A (en) * 2020-08-28 2020-11-24 湖南红太阳光电科技有限公司 Heating system and heating control method of PECVD (plasma enhanced chemical vapor deposition) equipment and PECVD equipment

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997009462A1 (en) * 1995-09-06 1997-03-13 Minnesota Mining And Manufacturing Company Substrate fixture
KR100603925B1 (en) * 1999-01-13 2006-07-24 삼성전자주식회사 Ashing equipment for use of semiconductor fabrication
JP2002020868A (en) * 2000-07-04 2002-01-23 Anelva Corp Thin film deposition system
US7368014B2 (en) 2001-08-09 2008-05-06 Micron Technology, Inc. Variable temperature deposition methods
JP2008034520A (en) * 2006-07-27 2008-02-14 Daikin Ind Ltd Substrate cooling device
JP2011117085A (en) * 2011-03-10 2011-06-16 Canon Anelva Corp Load-lock chamber and thin film forming apparatus having the same
JP2014165283A (en) * 2013-02-22 2014-09-08 Nissin Ion Equipment Co Ltd Ion beam irradiator and substrate cooling method
CN111979530A (en) * 2020-08-28 2020-11-24 湖南红太阳光电科技有限公司 Heating system and heating control method of PECVD (plasma enhanced chemical vapor deposition) equipment and PECVD equipment
CN111979530B (en) * 2020-08-28 2022-10-18 湖南红太阳光电科技有限公司 Heating system and heating control method of PECVD (plasma enhanced chemical vapor deposition) equipment and PECVD equipment

Similar Documents

Publication Publication Date Title
US5411076A (en) Substrate cooling device and substrate heat-treating apparatus
US5927077A (en) Processing system hot plate construction substrate
US6450803B2 (en) Heat treatment apparatus
JP3665826B2 (en) Substrate heat treatment equipment
US6353209B1 (en) Temperature processing module
KR100234635B1 (en) Treating apparatus and treating method
US5522215A (en) Substrate cooling apparatus
US4863547A (en) Equipment for heating and cooling substrates for coating photo resist thereto
CN1973356A (en) Use of an active wafer temperature control independent from wafer emissivity
US7947215B2 (en) Heat treatment apparatus, heat treatment method, and recording medium storing computer program carrying out the same
JPH06283493A (en) Substrate cooling device
JPH11168056A (en) Wafer-holding device
JP2901653B2 (en) Heat treatment method and heat treatment apparatus
JPH11111823A (en) Heat treatment device for substrate
US20200266115A1 (en) Heating and cooling apparatus having moisture removal function for testing electrical characteristic of semiconductor element using probe system
JP3649127B2 (en) Heat treatment equipment
JP4090104B2 (en) Substrate heat treatment equipment
JPH113893A (en) Temperature regulator of semiconductor substrate
JPH09289152A (en) Substrate heat treatment apparatus
JP2719332B2 (en) Plasma processing method
JP4079596B2 (en) Heat treatment device
JP3266843B2 (en) Heat treatment equipment
JP2000193376A (en) Heat-treating apparatus
JPH10340835A (en) Substrate heat processor
JPH0799167A (en) Treatment apparatus for substrate by irradiation with light