JPH06283310A - Temperature sensor - Google Patents
Temperature sensorInfo
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- JPH06283310A JPH06283310A JP6782693A JP6782693A JPH06283310A JP H06283310 A JPH06283310 A JP H06283310A JP 6782693 A JP6782693 A JP 6782693A JP 6782693 A JP6782693 A JP 6782693A JP H06283310 A JPH06283310 A JP H06283310A
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- temperature sensor
- thermistor element
- chemical formula
- resistance
- change
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は例えば自動車の排気ガス
対策の触媒の温度検知に使用する温度センサに関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature sensor used for detecting the temperature of a catalyst for exhaust gas countermeasures for automobiles.
【０００２】[0002]
【従来の技術】近年、環境問題や燃費向上等の要求か
ら、排気ガス対策用の触媒が使用されているが、その触
媒性能を高めるには触媒温度を正確に測定する必要があ
る。そのために温度センサの抵抗値の経時変化率を小さ
く、具体的には±２０％以内に抑えなくてはならない。2. Description of the Related Art In recent years, catalysts for exhaust gas countermeasures have been used in response to environmental problems and demands for improvement of fuel consumption. However, it is necessary to accurately measure the catalyst temperature in order to improve the catalyst performance. Therefore, the rate of change of the resistance value of the temperature sensor with time must be small, and specifically must be suppressed within ± 20%.
【０００３】従来、３００〜７００℃の温度を検知し、
１０００℃の耐熱性を有する温度センサに用いるサーミ
スタ素子の材料として、Ｍｇ（Ａｌ，Ｃｒ）2Ｏ4系が用
いられていた。Conventionally, a temperature of 300 to 700 ° C. is detected,
As a material for the thermistor element used for a temperature sensor having a heat resistance of 1000 ° C., Mg (Al, Cr) 2 O 4 system has been used.
【０００４】図２はサーミスタ素子の斜視図である。サ
ーミスタ素子１に白金パイプ２ａ，２ｂを挿入後、焼成
してサーミスタを得ていた。このサーミスタ素子１を図
１に示す触媒温度検知用センサの耐熱キャップ４内に密
封する。この時、白金パイプ２ａ，２ｂを二芯管３ａ，
３ｂと溶接し、中にリード線を通し、耐熱キャップ４外
に引出していた。FIG. 2 is a perspective view of the thermistor element. After inserting the platinum pipes 2a and 2b into the thermistor element 1, it is fired to obtain a thermistor. The thermistor element 1 is sealed in a heat resistant cap 4 of the catalyst temperature detecting sensor shown in FIG. At this time, the platinum pipes 2a, 2b are connected to the two-core pipe 3a,
3b was welded, the lead wire was passed through, and it was drawn out of the heat resistant cap 4.
【０００５】[0005]
【発明が解決しようとする課題】上記従来の構成では、
高温になると耐熱キャップ４を構成する金属原子が耐熱
キャップ４内の酸素と結合し、耐熱キャップ４内の酸素
分圧を下げることとなる。そのため平衡を保つためにサ
ーミスタ素子１から酸素が放出されていた。また、耐熱
キャップ４から水素や一酸化炭素等の還元性のガスが発
生し、サーミスタ素子１に吸着し、酸素を奪い素子１内
に拡散していた。このようにサーミスタ素子１の酸素が
失われるためその構造が変化してしまい、その結果抵抗
値の経時変化率を±２０％以内に抑えることができない
という問題点を有していた。SUMMARY OF THE INVENTION In the above conventional configuration,
When the temperature rises, the metal atoms forming the heat resistant cap 4 combine with oxygen in the heat resistant cap 4 to lower the oxygen partial pressure in the heat resistant cap 4. Therefore, oxygen was released from the thermistor element 1 in order to maintain equilibrium. Further, a reducing gas such as hydrogen or carbon monoxide was generated from the heat resistant cap 4, adsorbed to the thermistor element 1, deprived of oxygen and diffused in the element 1. As described above, the structure of the thermistor element 1 is changed due to the loss of oxygen, and as a result, the rate of change in resistance with time cannot be suppressed to within ± 20%.
【０００６】本発明は上記従来の問題点を解決するもの
で、抵抗値の経時変化率を小さくすることを目的とする
ものである。The present invention solves the above-mentioned conventional problems, and an object thereof is to reduce the rate of change in resistance with time.
【０００７】[0007]
【課題を解決するための手段】この目的を達成するため
に本発明の温度センサは、サーミスタ素子を（化１）で
表される組成の酸化物を用いて形成したものである。In order to achieve this object, the temperature sensor of the present invention is one in which a thermistor element is formed by using an oxide having a composition represented by Chemical formula 1.
【０００８】[0008]
【作用】上記構成によるとコランダム構造をとる高抵抗
のＡｌ2Ｏ3にＰ型伝導のＣｒ2Ｏ3とＮ型伝導のＦｅ2Ｏ3
を固溶させたものとなる。この時Ｐ型は酸素を失うと抵
抗値が増加し、Ｎ型は減少し、このように同一結晶中に
Ｐ型とＮ型を存在させることにより抵抗値の経時変化を
小さく抑えることができる。According to the above-mentioned structure, P-type conduction Cr 2 O 3 and N-type conduction Fe 2 O 3 are added to high resistance Al 2 O 3 having a corundum structure.
Is a solid solution. At this time, the resistance value of the P-type increases when oxygen is lost, and the resistance value of the N-type decreases, and the presence of the P-type and the N-type in the same crystal makes it possible to suppress the change in resistance value with time.
【０００９】[0009]
【実施例】（実施例１）以下本発明の一実施例について
図と表を参照しながら説明する。図１は触媒温度検知用
温度センサの断面図である。サーミスタ素子１の構成材
料以外は従来と同じ構成なので同一番号が付してある。(Embodiment 1) An embodiment of the present invention will be described below with reference to the drawings and tables. FIG. 1 is a sectional view of a temperature sensor for detecting catalyst temperature. Except for the constituent material of the thermistor element 1, it has the same structure as the conventional one, so the same reference numerals are given.
【００１０】図２はサーミスタ素子１の斜視図である。
（化１）におけるＡｌ2Ｏ3，Ｃｒ2Ｏ3，Ｆｅ2Ｏ3をｘと
ｙが表１に示す組成になるように所定量秤量し試料No.
１〜２７を作成した。まず試料No.１をボールミルで１
６時間混合し、１２００℃で仮焼後再びボールミルで１
８時間粉砕した。そして乾燥後１０重量％濃度のポリビ
ニルアルコール水溶液を全体の８重量％添加して造粒を
行った。最後に図２に示す形状に成形を行い、白金パイ
プ２ａ，２ｂを挿入後１６００℃で焼成し、サーミスタ
素子１を得た。試料No.２〜２７についても同様の操作
を行った。FIG. 2 is a perspective view of the thermistor element 1.
Al 2 O 3 , Cr 2 O 3 , and Fe 2 O 3 in (Chemical formula 1) were weighed in predetermined amounts so that x and y had the compositions shown in Table 1, and sample No.
1-27 were created. First, sample No. 1 with a ball mill
Mix for 6 hours, calcine at 1200 ° C, and then use ball mill again 1
Crushed for 8 hours. Then, after drying, 8% by weight of the whole polyvinyl alcohol aqueous solution having a concentration of 10% by weight was added for granulation. Finally, the thermistor element 1 was obtained by molding into the shape shown in FIG. 2, inserting the platinum pipes 2a and 2b, and firing at 1600 ° C. The same operation was performed on Sample Nos. 2 to 27.
【００１１】[0011]
【表１】 [Table 1]
【００１２】このようにして得られたサーミスタ素子１
を従来と同様にして図１に示す触媒温度検知用の温度セ
ンサの耐熱キャップ４内に組み込んで、３００℃，６０
０℃，８５０℃における抵抗値を測定しそれを表１にＲ
３００，Ｒ６００，Ｒ８５０として示した。また９００
℃で１０００時間の密閉耐久試験を行った後、３００℃
における抵抗値を測定し、変化率を求め、表１にΔＲ３
００として示した。The thermistor element 1 thus obtained
In the same manner as in the conventional case, the temperature sensor for detecting the catalyst temperature shown in FIG.
The resistance values at 0 ° C and 850 ° C were measured and are shown in Table 1 as R
It is shown as 300, R600 and R850. Again 900
After conducting a sealed endurance test at 1000C for 1000 hours, then 300 ℃
The resistance value was measured and the rate of change was calculated.
It is shown as 00.
【００１３】なお抵抗値変化率は（密閉耐久試験後の抵
抗値−初期抵抗値）／初期抵抗値×１００（％）を用い
て算出した。The rate of change in resistance value was calculated by using (resistance value after sealed durability test-initial resistance value) / initial resistance value x 100 (%).
【００１４】表１の試料No.２０のようにＦｅ成分が増
加しｙ／（ｘ＋ｙ）の値が、０．６を越えると、抵抗値
変化率が−３０％と大きい。その理由は、Ｆｅが高温下
で耐久性に劣り、還元雰囲気において酸素を奪われやす
いＦｅ3Ｏ4として存在するからで、そのためＰ型とＮ型
のバランスがとれなくなるのである。またＦｅ成分が多
くなるとクラックを生じることもある。When the Fe component increases and the value of y / (x + y) exceeds 0.6 as in sample No. 20 in Table 1, the resistance change rate is as large as -30%. The reason is that Fe is inferior in durability at a high temperature and exists as Fe 3 O 4 which is easily deprived of oxygen in a reducing atmosphere, so that the P type and the N type cannot be balanced. Moreover, when the Fe component is increased, cracks may occur.
【００１５】また試料No.５のようにＦｅ成分が全く含
まれていないと、Ｎ型が存在せず抵抗値変化率は＋３７
％と大きくなる。When the Fe component is not contained at all like Sample No. 5, the N-type does not exist and the resistance value change rate is +37.
It becomes as large as%.
【００１６】（実施例２）以下に本発明の第２の実施例
について説明する。(Second Embodiment) A second embodiment of the present invention will be described below.
【００１７】（化２）におけるＡｌ2Ｏ3，Ｃｒ2Ｏ3，Ｆ
ｅ2Ｏ3，ＣａＣＯ3をｘ，ｙ，ａが表２に示す組成にな
るように所定量秤量し、試料No.２８〜３９を作成し
た。Al 2 O 3 , Cr 2 O 3 and F in the chemical formula 2
A predetermined amount of e 2 O 3 and CaCO 3 was weighed so that x, y, and a had the compositions shown in Table 2, and sample Nos. 28 to 39 were prepared.
【００１８】[0018]
【表２】 [Table 2]
【００１９】焼成温度を１５００℃にした以外は（実施
例１）の場合と同様にして、サーミスタ素子１を得た。
そしてそれを図１に示す触媒温度検知用の温度センサの
耐熱キャップ４内に密封し、３００℃，６００℃，８５
０℃における抵抗値を測定し、それを表２内にＲ３０
０，Ｒ６００，Ｒ８５０として示した。次に９００℃で
１０００時間の密閉耐久試験後、３００℃における抵抗
値を測定し、抵抗値変化率を（実施例１）のようにして
求めた。それを表２にΔＲ３００として示した。なおＣ
ａＯは主成分（化１）に固溶せず、単独で粒界に存在す
る。表２の試料No.３９のように、ＣａＯの添加量が５
原子％を越えると、焼成中にＣａＯが飛散しサーミスタ
素子１はポーラスになる。そのため酸素を奪われやすく
なり、抵抗値の経時変化率が±２０％を越えてしまう。
また試料No.３８のようにＣａＯの添加量が０．１原子
％未満になると、（実施例１）よりも焼成温度が１００
℃も低いため、緻密化をはかることができず、抵抗値の
経時変化率が大きくなる。ＣａＯ添加時、無添加時の理
論密度比を密度比１、密度比２として表２に並記してい
る。理論密度化は（素体密度）／（理論密度）×１００
（％）を用いて算出した。無添加時の密度比２は（実施
例１）を用いて求めたものである。表２を見るとわかる
ように、焼成温度を１００℃も下げているにもかかわら
ず、ＣａＯを添加することにより、緻密なサーミスタ素
子１が得られる。A thermistor element 1 was obtained in the same manner as in (Example 1) except that the firing temperature was 1500 ° C.
Then, it is sealed in a heat-resistant cap 4 of a temperature sensor for detecting the catalyst temperature shown in FIG.
The resistance value at 0 ° C was measured, and it was recorded in Table 2 as R30.
It is shown as 0, R600, and R850. Next, after a sealed durability test at 900 ° C. for 1000 hours, the resistance value at 300 ° C. was measured, and the resistance value change rate was obtained as in (Example 1). It is shown in Table 2 as ΔR300. Note that C
aO does not form a solid solution with the main component (Chemical Formula 1) and exists alone at the grain boundaries. Like sample No. 39 in Table 2, the amount of CaO added is 5
When it exceeds atomic%, CaO scatters during firing and the thermistor element 1 becomes porous. Therefore, oxygen is easily deprived, and the rate of change in resistance with time exceeds ± 20%.
When the amount of CaO added is less than 0.1 atom% as in sample No. 38, the firing temperature is 100 than that in (Example 1).
Since the temperature is also low, densification cannot be achieved, and the rate of change in resistance with time increases. The theoretical density ratios with and without addition of CaO are shown in Table 2 as density ratio 1 and density ratio 2. Theoretical densification is (elemental density) / (theoretical density) × 100
(%) Was used for calculation. The density ratio 2 without addition is obtained by using (Example 1). As can be seen from Table 2, the dense thermistor element 1 can be obtained by adding CaO even though the firing temperature is lowered by 100 ° C.
【００２０】なお、ＣａＯの添加はＣｒを多く含むもの
に特に効果がある。 （実施例３）以下本発明の第３の実施例について説明す
る。The addition of CaO is particularly effective for those containing a large amount of Cr. (Embodiment 3) A third embodiment of the present invention will be described below.
【００２１】（化３）におけるＡｌ2Ｏ3，Ｃｒ2Ｏ3，Ｆ
ｅ2Ｏ3，ＣａＣＯ3，希土類酸化物（Ｙ2Ｏ3，Ｌａ
2Ｏ3，ＣｅＯ2，Ｐｒ6Ｏ11，Ｎｄ2Ｏ3，Ｓｍ2Ｏ3，Ｅｕ
2Ｏ3，Ｇｄ2Ｏ3，Ｔｂ4Ｏ7，Ｄｙ2Ｏ3，Ｈｏ2Ｏ3，Ｅｒ
2Ｏ3，Ｔｍ2Ｏ3，Ｙｂ2Ｏ3，Ｌｕ 2Ｏ3）をｘ，ｙ，ａ，
ｂが表３に示す組成になるように、所定量秤量し試料N
o.４０〜７７を作成した。Al in (Chemical Formula 3)2O3, Cr2O3, F
e2O3, CaCO3, Rare earth oxides (Y2O3, La
2O3, CeO2, Pr6O11, Nd2O3, Sm2O3, Eu
2O3, Gd2O3, TbFourO7, Dy2O3, Ho2O3, Er
2O3, Tm2O3, Yb2O3, Lu 2O3) Is x, y, a,
Sample N was weighed so that b had the composition shown in Table 3.
o.40-77 was created.
【００２２】[0022]
【表３】 [Table 3]
【００２３】（実施例１）の場合と同様にして、高温サ
ーミスタ素子１を得た。そして図１に示す触媒温度検知
用温度センサの耐熱性キャップ４内に密封し、３００
℃，６００℃，９００℃における抵抗値を測定し、表３
にＲ３００，Ｒ６００，Ｒ９００として示した。次に１
１００℃で１０００時間の密閉耐久試験を行った後、３
００℃における抵抗値を測定し、変化率を実施例１と同
様に算出し、表３にΔＲ３００として示した。A high temperature thermistor element 1 was obtained in the same manner as in (Example 1). Then, the catalyst temperature detecting temperature sensor shown in FIG.
The resistance values at ℃, 600 ℃ and 900 ℃ were measured, and Table 3
Are shown as R300, R600, and R900. Then 1
After conducting a sealed endurance test at 100 ° C for 1000 hours, 3
The resistance value at 00 ° C. was measured, the rate of change was calculated in the same manner as in Example 1, and shown in Table 3 as ΔR300.
【００２４】本実施例においては希土類酸化物とＣａＯ
を添加して緻密化をはかり、吸着ガスが酸素を奪い拡散
するのを防いでいる。また希土類酸化物は粒界におい
て、ペロブスカイト構造の（ＲＥ）ＣｒＯ3として存在
している。ここでＲＥは希土類元素を表している。Ｃａ
Ｏは主成分（化１）と固溶せず単独で粒界に存在してい
る。In this embodiment, rare earth oxide and CaO are used.
Is added to achieve densification and prevent the adsorbed gas from depriving oxygen and diffusing. The rare earth oxide exists as (RE) CrO 3 having a perovskite structure at the grain boundary. Here, RE represents a rare earth element. Ca
O does not form a solid solution with the main component (Chemical Formula 1) and exists alone at the grain boundary.
【００２５】表３の試料No.４２，５４，６６のように
希土類酸化物の添加量が１０原子％を越えると、（Ｒ
Ｅ）ＣｒＯ3の偏析量が増加し、主成分（化１）のＣｒ
が多量に失われ半導体特性のバランスが崩れ抵抗値の経
時変化率が±２０％を越えてしまう。また試料No.４
７，６１，７５のように、ＣａＯを添加せずかつ希土類
酸化物の添加量が０．１原子％未満であると、抵抗値の
経時変化率は±２０％を大きく越えてしまう。When the addition amount of the rare earth oxide exceeds 10 atomic% as in Sample Nos. 42, 54 and 66 of Table 3, (R
E) The segregation amount of CrO 3 is increased, and the main component (Chemical formula 1) of Cr
Is lost in a large amount, the balance of semiconductor characteristics is lost, and the rate of change in resistance over time exceeds ± 20%. Sample No.4
When CaO is not added and the amount of the rare earth oxide added is less than 0.1 atomic% as in Nos. 7, 61 and 75, the rate of change in resistance with time greatly exceeds ± 20%.
【００２６】なお、密閉耐久試験温度を実施例１・２と
比較してもわかるように、希土類酸化物を添加すると耐
熱温度は２００℃も向上している。As can be seen by comparing the sealing endurance test temperature with those of Examples 1 and 2, the addition of the rare earth oxide improves the heat resistance temperature by 200 ° C.
【００２７】（実施例４）以下、本発明の第４の実施例
について説明する。(Fourth Embodiment) The fourth embodiment of the present invention will be described below.
【００２８】（化４）におけるＡｌ2Ｏ3，Ｃｒ2Ｏ3，Ｆ
ｅ2Ｏ3，ＣａＣＯ3，ＴｈＯ2をｘ，ｙ，ａ，ｂが表４に
示す組成になるように所定量秤量し、試料No.７８〜８
８を作成した。Al 2 O 3 , Cr 2 O 3 and F in the chemical formula 4
A predetermined amount of e 2 O 3 , CaCO 3 , and ThO 2 was weighed so that x, y, a, and b had the compositions shown in Table 4, and sample Nos. 78 to 8 were used.
8 was created.
【００２９】[0029]
【表４】 [Table 4]
【００３０】（実施例１）の場合と同様にして、サーミ
スタ素子１を得て、それを図１に示す触媒温度検知用温
度センサの耐熱キャップ４内に密封し、３００℃，６０
０℃，９００℃における抵抗値を測定し、表４において
Ｒ３００，Ｒ６００，Ｒ９００として示した。そして１
１００℃で１０００時間の密閉耐久試験を行った後、３
００℃における抵抗値を測定し、その変化率を（実施例
１）と同様にして算出し、それを表４にΔＲ３００とし
て示す。In the same manner as in (Example 1), the thermistor element 1 was obtained, and the thermistor element 1 was sealed in the heat resistant cap 4 of the catalyst temperature detecting temperature sensor shown in FIG.
The resistance values at 0 ° C. and 900 ° C. were measured and shown in Table 4 as R300, R600, and R900. And 1
After conducting a sealed endurance test at 100 ° C for 1000 hours, 3
The resistance value at 00 ° C. was measured, and the rate of change was calculated in the same manner as in (Example 1), which is shown in Table 4 as ΔR300.
【００３１】ＴｈＯ2，ＣａＯは主成分（化１）と固溶
せず単独で粒界に存在する。そしてＴｈＯ2は還元雰囲
気に安定なので希土類酸化物と比較すると１０分の１の
添加量でも同様の効果を得ることができる。ThO 2 and CaO do not form a solid solution with the main component (Chemical Formula 1) and exist alone at grain boundaries. Since ThO 2 is stable in a reducing atmosphere, a similar effect can be obtained even with an addition amount of 1/10 that of rare earth oxides.
【００３２】しかし表４の試料No.８２のようにＴｈＯ2
の添加量が１０原子％を越えると、急速に焼結性が悪く
なりポーラスの発生が増加し、抵抗値の経時変化率が−
２０％を越えてしまう。また試料No.８５のように、Ｃ
ａＯを添加せずかつＴｈＯ2の添加量が０．０１原子％
未満になると、抵抗値の経時変化率が−２０％を越えて
しまう。However, as shown in sample No. 82 of Table 4, ThO 2
When the amount of addition of Al exceeds 10 atomic%, the sinterability rapidly deteriorates, the generation of porous particles increases, and the rate of change in resistance with time is −.
It exceeds 20%. Also, as in sample No. 85, C
aO is not added and the amount of ThO 2 added is 0.01 atom%.
If it is less than the lower limit, the rate of change in resistance over time exceeds -20%.
【００３３】またＴｈＯ2も希土類酸化物と同様に耐熱
温度を２００℃も改善できる。 （実施例５）以下、本発明の第５の実施例について説明
する。Further, ThO 2 can also improve the heat resistance temperature by 200 ° C. like the rare earth oxide. (Fifth Embodiment) The fifth embodiment of the present invention will be described below.
【００３４】（化５）におけるＡｌ2Ｏ3，Ｃｒ2Ｏ3，Ｆ
ｅ2Ｏ3，ＣａＣＯ3，ＺｒＯ2をｘ，ｙ，ａ，ｂが表５に
示す組成になるようにそれぞれ所定量秤量し、試料No.
８９〜１０１を作成した。Al 2 O 3 , Cr 2 O 3 and F in the chemical formula 5
A predetermined amount of e 2 O 3 , CaCO 3 , and ZrO 2 was weighed so that x, y, a, and b had the compositions shown in Table 5, and sample No.
89-101 was created.
【００３５】[0035]
【表５】 [Table 5]
【００３６】（実施例１）の場合と同様にして、サーミ
スタ素子１を得て、図１に示す触媒温度検知用温度セン
サの耐熱キャップ４内に密封し、３００℃，６００℃，
９００℃における抵抗値を測定し、表５にＲ３００，Ｒ
６００，Ｒ９００として示した。そして１１００℃で１
０００時間の密閉耐久試験を行った後、３００℃におけ
る抵抗値を測定し、その変化率を（実施例１）と同様に
算出し、表５にΔＲ３００として示した。In the same manner as in (Example 1), the thermistor element 1 was obtained and sealed in the heat-resistant cap 4 of the catalyst temperature detecting temperature sensor shown in FIG.
The resistance value at 900 ° C. was measured.
It is shown as 600 and R900. And 1 at 1100 ° C
After performing the sealed endurance test for 000 hours, the resistance value at 300 ° C. was measured, and the rate of change was calculated in the same manner as in (Example 1), and shown in Table 5 as ΔR300.
【００３７】ＺｒＯ2，ＣａＯは共に主成分（化１）と
固溶せず、それぞれ単独で粒界に存在する。表５の試料
No.９２，９６のように、ＺｒＯ2の添加量が３０原子％
を越えると焼結性が悪化し、抵抗値の経時変化率が−２
０％を越えてしまう。Both ZrO 2 and CaO do not form a solid solution with the main component (Chemical Formula 1), and each exists alone at the grain boundary. Table 5 samples
Like Nos. 92 and 96, the amount of ZrO 2 added is 30 atom%.
If it exceeds, the sinterability deteriorates and the rate of change in resistance with time is -2.
It exceeds 0%.
【００３８】ＺｒＯ2もＴｈＯ2、希土類酸化物と同様に
耐熱温度が２００℃も向上している。Like ZrO 2 and ThO 2 and the rare earth oxides, the heat resistance temperature is improved by 200 ° C.
【００３９】さらに、主成分（化１）の組成が一定のと
き、ＺｒＯ2の添加量を調節することにより、抵抗値を
幅広くコントロールできるようになる。Further, when the composition of the main component (Chemical Formula 1) is constant, the resistance value can be widely controlled by adjusting the addition amount of ZrO 2 .
【００４０】なお上記（実施例１〜５）からもわかるよ
うに、本発明の温度センサに用いるサーミスタ材料は、
環境変化に強い。そこでディスク型やガラス封入するな
ど形状を変えても温度センサとして十分使用できる。As can be seen from the above (Examples 1 to 5), the thermistor material used in the temperature sensor of the present invention is
Strong against environmental changes. Therefore, it can be sufficiently used as a temperature sensor even if the shape is changed, such as a disk type or glass sealed.
【００４１】[0041]
【発明の効果】以上のように本発明の温度センサに用い
るサーミスタ素子はダム構造をとる高抵抗Ａｌ2Ｏ3にＰ
型伝導のＣｒ2Ｏ3と、Ｎ型伝導のＦｅ2Ｏ3を固溶させた
もので形成され、同一結晶中にＰ型とＮ型を混在させる
ことにより、高温下でサーミスタ素子が酸素を失って
も、抵抗値の経時変化を小さく抑えることができる。As described above, the thermistor element used in the temperature sensor of the present invention has a dam structure of high resistance Al 2 O 3 and P
It is formed by a solid solution of Cr 2 O 3 of type conductivity and Fe 2 O 3 of N type conductivity. By mixing P type and N type in the same crystal, the thermistor element can generate oxygen at high temperature. Even if it is lost, the change in resistance with time can be suppressed to be small.
【図１】本発明の一実施例の触媒温度検知用温度センサ
の断面図FIG. 1 is a sectional view of a temperature sensor for detecting a catalyst temperature according to an embodiment of the present invention.
【図２】本発明の一実施例のサーミスタ素子の斜視図FIG. 2 is a perspective view of a thermistor element according to an embodiment of the present invention.
１ サーミスタ素子 ４ 耐熱キャップ 1 Thermistor element 4 Heat resistant cap
───────────────────────────────────────────────────── フロントページの続き (72)発明者 畑 拓興 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takuko Hata 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (5)
ップ内に設けたサーミスタ素子と、このサーミスタ素子
に電気的に接続されるとともに、前記耐熱キャップ外に
引出したリード線とを備え、前記サーミスタ素子を（化
１）で表される物質を用いて形成した温度センサ。 【化１】 1. A thermistor comprising: a metal heat-resistant cap; a thermistor element provided in the heat-resistant cap; and a lead wire that is electrically connected to the thermistor element and is drawn out of the heat-resistant cap. A temperature sensor in which an element is formed using a substance represented by (Chemical Formula 1). [Chemical 1]
としたとき、サーミスタ素子が（化２）で表される物質
を用いて形成された請求項１記載の温度センサ。 【化２】 2. The constituent metal atom of (Chemical formula 1) is 100 atom%.
The temperature sensor according to claim 1, wherein the thermistor element is formed by using a substance represented by (Chemical Formula 2). [Chemical 2]
としたとき、サーミスタ素子が（化３）で表される物質
を用いて形成された請求項１記載の温度センサ。 【化３】 3. The constituent metal atom of (Chemical formula 1) is 100 atom%.
In this case, the temperature sensor according to claim 1, wherein the thermistor element is formed by using a substance represented by (Chemical Formula 3). [Chemical 3]
としたとき、サーミスタ素子が（化４）で表される物質
を用いて形成された請求項１に記載の温度センサ。 【化４】 4. The constituent metal atom of (Chemical formula 1) is 100 atom%.
In this case, the temperature sensor according to claim 1, wherein the thermistor element is formed by using a substance represented by (Chemical Formula 4). [Chemical 4]
としたとき、サーミスタ素子が（化５）で表される物質
を用いて形成された請求項１に記載の温度センサ。 【化５】 5. The constituent metal atom of the chemical formula 1 is 100 atom%.
In this case, the temperature sensor according to claim 1, wherein the thermistor element is formed by using the substance represented by (Chemical Formula 5). [Chemical 5]
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5067826A JP2985561B2 (en) | 1993-03-26 | 1993-03-26 | Temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5067826A JP2985561B2 (en) | 1993-03-26 | 1993-03-26 | Temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06283310A true JPH06283310A (en) | 1994-10-07 |
| JP2985561B2 JP2985561B2 (en) | 1999-12-06 |
Family
ID=13356147
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5067826A Expired - Fee Related JP2985561B2 (en) | 1993-03-26 | 1993-03-26 | Temperature sensor |
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| Country | Link |
|---|---|
| JP (1) | JP2985561B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996035932A1 (en) * | 1995-05-11 | 1996-11-14 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor element, temperature sensor having the same and method for producing the same temperature sensor element |
| US5644284A (en) * | 1994-04-27 | 1997-07-01 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor |
| EP0795879A1 (en) * | 1995-08-31 | 1997-09-17 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor and its manufacture |
| US6081182A (en) * | 1996-11-22 | 2000-06-27 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor element and temperature sensor including the same |
| US6143207A (en) * | 1996-09-18 | 2000-11-07 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Wide-range thermistor material and method for producing it |
-
1993
- 1993-03-26 JP JP5067826A patent/JP2985561B2/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5644284A (en) * | 1994-04-27 | 1997-07-01 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor |
| US5694107A (en) * | 1994-04-27 | 1997-12-02 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor |
| WO1996035932A1 (en) * | 1995-05-11 | 1996-11-14 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor element, temperature sensor having the same and method for producing the same temperature sensor element |
| KR100227490B1 (en) * | 1995-05-11 | 1999-11-01 | 모리시타 요이찌 | Temperature sensor element, temperature sensor having the same and method for producing the same temperature sensor element |
| US6014073A (en) * | 1995-05-11 | 2000-01-11 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor element, temperature sensor having the same and method for producing the same temperature sensor element |
| EP0795879A1 (en) * | 1995-08-31 | 1997-09-17 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor and its manufacture |
| EP0795879A4 (en) * | 1995-08-31 | 1998-12-23 | Matsushita Electric Ind Co Ltd | Temperature sensor and its manufacture |
| US6164819A (en) * | 1995-08-31 | 2000-12-26 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor and a method of manufacturing the same |
| US6272735B1 (en) | 1995-08-31 | 2001-08-14 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor and a method of manufacturing the same |
| US6143207A (en) * | 1996-09-18 | 2000-11-07 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Wide-range thermistor material and method for producing it |
| US6081182A (en) * | 1996-11-22 | 2000-06-27 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor element and temperature sensor including the same |
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| Publication number | Publication date |
|---|---|
| JP2985561B2 (en) | 1999-12-06 |
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