JPH0627946Y2 - 縦型薄膜気相成長装置のバレル型サセプタ装着ウエハ加熱部 - Google Patents
縦型薄膜気相成長装置のバレル型サセプタ装着ウエハ加熱部Info
- Publication number
- JPH0627946Y2 JPH0627946Y2 JP4660288U JP4660288U JPH0627946Y2 JP H0627946 Y2 JPH0627946 Y2 JP H0627946Y2 JP 4660288 U JP4660288 U JP 4660288U JP 4660288 U JP4660288 U JP 4660288U JP H0627946 Y2 JPH0627946 Y2 JP H0627946Y2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- susceptor
- vapor phase
- wafer
- film vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 10
- 238000010438 heat treatment Methods 0.000 title claims description 9
- 238000001947 vapour-phase growth Methods 0.000 title claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4660288U JPH0627946Y2 (ja) | 1988-04-05 | 1988-04-05 | 縦型薄膜気相成長装置のバレル型サセプタ装着ウエハ加熱部 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4660288U JPH0627946Y2 (ja) | 1988-04-05 | 1988-04-05 | 縦型薄膜気相成長装置のバレル型サセプタ装着ウエハ加熱部 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01153634U JPH01153634U (enrdf_load_stackoverflow) | 1989-10-23 |
| JPH0627946Y2 true JPH0627946Y2 (ja) | 1994-07-27 |
Family
ID=31272869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4660288U Expired - Lifetime JPH0627946Y2 (ja) | 1988-04-05 | 1988-04-05 | 縦型薄膜気相成長装置のバレル型サセプタ装着ウエハ加熱部 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0627946Y2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2617064B2 (ja) * | 1992-07-28 | 1997-06-04 | 日本碍子株式会社 | 半導体ウェハー加熱装置およびその製造方法 |
-
1988
- 1988-04-05 JP JP4660288U patent/JPH0627946Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01153634U (enrdf_load_stackoverflow) | 1989-10-23 |
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