JPH06275775A - Semiconductor device - Google Patents

Abstract

PURPOSE:To acquire a semiconductor device which enables adoption to a space mount device by raising package density of a semiconductor element and by improving-resistant properties and heat resistance. CONSTITUTION:The title device is constituted of a unit 20 wherein a semiconductor element 1 is mounted on plate-like module plate and connection patterns 13, 14 connected to the semiconductor element are provided to a front and rear thereof and an anisotropic conductive buffer member 21 which electrically connects the connection patterns 13, 14 mutually. Since a plurality of units 20 are laminated and a lamination structure is realized by inserting the anisotropic conductive buffer member 21 between the units 20, package density of the semiconductor element 1 is improved and vibration-resistant properties are improved by absorbing vibration into the buffer member 21. Heat of the semiconductor element 1 is dissipated through the module plate and heat resistance is improved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-chip semiconductor device in which semiconductor elements are stacked to have a high density and a large capacity, and more particularly to a semiconductor device applied to space-mounted equipment which requires vibration resistance and heat resistance.

[0002]

2. Description of the Related Art Recently, in order to increase the density and capacity of a semiconductor device, a semiconductor device in which a plurality of semiconductor elements are stacked in the thickness direction has been proposed. For example, Japanese Patent Laid-Open No. 2-1981
As disclosed in Japanese Patent Laid-Open No. 48, as shown in FIG. 5, a semiconductor element 31 is mounted on a TAB (Tape Automated Bonding) tape 32 to form a TAB device 30. The TAB is formed in the rectangular frame-shaped connector 33 having the same thickness.
The device 30 is mounted. Then, by stacking a plurality of connectors 33 on which the TAB device 30 is mounted and interconnecting conductors 34 provided on the front and back surfaces of the peripheral portions of the upper and lower connectors 33, the semiconductor elements 31 are connected to each other. The electrical connection is made to build a required circuit. By mounting such a configuration on the mother board 22 and connecting the conductor 34 to the connection pattern 23, the area occupied by the semiconductor elements on the mother board on which a plurality of semiconductor elements are mounted and which constitutes a semiconductor device is reduced. Therefore, high density and large capacity of the semiconductor device can be realized. Further, by using the connector, it is possible to prevent mutual interference of the semiconductor elements to be stacked and to arbitrarily make electrical connection between the semiconductor elements.

[0003]

In the semiconductor device shown in FIG. 5, a plurality of connectors 33 equipped with the TAB device 30 are mounted.
Since a plurality of stacked connectors 33 are stacked and the conductors 34 on the periphery thereof are connected for electrical connection, the plurality of stacked connectors 33 are integrally configured, and the entire semiconductor device has a rigid structure. Become. For this reason, when such a semiconductor device is used in space-borne equipment, the impact applied to the equipment may be transmitted to the connector 33 as it is, and the conductor 34 that electrically connects the connectors to each other may be damaged. There is. Further, the vibration due to the impact may be transmitted to the inside of the TAB device 30 via the connector 33 to damage the semiconductor element 31 or the connecting portion between the semiconductor element 31 and the TAB tape 32. Further, in the semiconductor device, the connector 33 is formed in a frame shape, and the T
Since the AB device 30 is mounted, the overall height of the semiconductor device can be reduced, but the stacked semiconductor elements 31 are arranged so as to face each other, and the heat generated in each semiconductor element 31 is mutually generated. There is a risk that the heat will be exerted on each other and the heat will be trapped inside the connector 33, reducing the heat dissipation effect and deteriorating the heat resistance of the semiconductor element. An object of the present invention is to provide a semiconductor device which has improved vibration resistance and improved heat resistance and can be used in space-mounted equipment.

[0004]

According to the present invention, a semiconductor device is mounted on a plate-shaped module plate, and a unit unit having connection patterns connected to the semiconductor device on the front and back surfaces thereof, and a plurality of unit units. And a cushioning member of anisotropic conductivity that is interposed between the unit units and electrically connects the connection patterns of the unit units to each other. Here, the module plate is formed in a rectangular plate shape, has a connecting pattern interconnected by through holes on the front and back surfaces of its peripheral portion, and has a concave portion in the central portion, The lead is connected to the connecting pattern while being mounted on the lead supported by the tape and installed in the recess of the module plate. The anisotropic conductive buffer member is made of anisotropic conductive resin or anisotropic conductive rubber, and absorbs shock and vibration between unit units.

[0005]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 shows a unit unit 1 according to an embodiment of the present invention.
FIG. 2 is a partially exploded perspective view showing one, and FIG. 2 is a plan view and a sectional view of the assembled state. In these figures, here, for example, a memory device having a bare chip configuration is used as a semiconductor element to be mounted.
Is mounted on the TAB tape 2 and configured as a TAB device 10. The TAB tape 2 has a lead 4 having a required pattern formed on a film carrier 3 made of a polyimide resin, and the semiconductor element 1 is connected to an inner lead portion of the lead. The lead 4 is made of Cu, and its surface is plated with Ni / Au. Alternatively, Cu is plated with solder. In addition, the semiconductor element 1 has bumps 5
Alternatively, it is connected to the lead 4 by the flip chip method.
The portion of the semiconductor element 1 on the TAB tape 2 side is covered with a protective resin 6, and the outer lead portions of the leads 4 are projected around the protective resin 6 (here, two opposite sides).

The TAB device 10 is mounted on the module plate 11. The module plate 11 is made of an insulating plate material that is slightly thicker than the TAB device 10.
The rectangular shape is formed to be one size larger than the AB device 10, and the concave portion 12 is formed in the central portion except the peripheral portion. Further, connection patterns 13 and 14 made of a conductor film are formed on the front and back surfaces of the opposing two sides of the peripheral portion, respectively. The connection patterns 13 and 14 on the front and back surfaces are selectively electrically connected by the through holes 15 formed in the thickness direction of the module plate 11. Positioning marks 16 used for positioning when stacking a plurality of module plates 11 are provided at two locations on the surface of the peripheral portion, as described later. The module plate 11 is made of a material having high heat resistance and as good thermal conductivity as possible.

When mounting the TAB device 10 on the module plate 11, the TAB device 10 is placed in the recess 12 of the module plate 11, and the semiconductor element 1 is bonded by the adhesive 17 having high thermal conductivity. Is connected to the inner surface of the recess 12. Further, the outer lead portions of the leads 4 arranged on the two opposite sides of the TAB tape 2 are connected to the connection pattern 13 on the front surface side of the module plate 11 by soldering or the like. As a result, the unit unit 20 including the TAB device 10 and the module plate 11 is configured.

FIG. 3 is a partially exploded perspective view of a semiconductor device formed by stacking a plurality of the unit units 20 described above.
FIG. 4 is a sectional view of the assembled state. As shown in these figures, the semiconductor device includes a plurality of unit units 20.
The cushioning members 21 each having a rectangular frame shape are stacked between each other. The buffer member 20 is made of a relatively thick anisotropic conductive resin or anisotropic conductive rubber, and is configured to conduct electricity only in the vertical direction while maintaining an insulating state in the lateral direction. . For example, it is possible to use a so-called zebra connector in which a silicon resin is formed in a rectangular frame shape, and carbon is mixed into the silicon resin in a vertical stripe shape to form a plurality of conductive portions in an array.

These cushioning members 21 are inserted between a plurality of unit units 20, and then the upper and lower module plates 11 and the cushioning members 2 are bonded by an adhesive in the side regions of the module plate 11 where the connection patterns 13 and 14 do not exist.
1 and 1 are bonded to each other for mechanical connection, and the contact between the connection patterns 13 and 14 of the module plate 11 and the buffer member 21 causes electrical connection between the upper and lower unit units 20 sandwiching the buffer member 21. Making a good connection. Further, in the semiconductor device assembled in this manner, the unit unit 20 arranged at the bottom is adhered to the motherboard 22, and the connection pattern 14 is electrically connected to the connection pattern 23 of the motherboard 22.

According to the semiconductor device having this structure, since the plurality of semiconductor elements are laminated, the mother boat 2
It is possible to reduce the occupied area per semiconductor element occupying on the upper surface of the semiconductor device 2 and increase the density and capacity of the semiconductor device. Further, since each semiconductor element 1 is configured as the TAB device 10 and mounted on the module plate 11 to be a unit unit, by stacking using any number of arbitrary unit units 20, a desired scale can be obtained. The semiconductor device can be easily configured.

Further, when a plurality of unit units 20 are stacked, since the buffer member 21 is inserted between the module plates 11, even if an external impact or a vibration associated therewith is applied to the semiconductor device, for example, this The shock and vibration are absorbed by the deformation of the buffer member 21, and the module plate 11
And the transmission to the semiconductor element 1 in the TAB device 10 is alleviated. As a result, the module plate 1
1 and the damage of the connection part in the TAB device 10 and the semiconductor element itself can be prevented, and the vibration resistance can be improved.

Further, in each unit unit 20, the semiconductor element 1 is arranged in the recess 12 of the module plate 11. Therefore, even when the unit units 20 are stacked, the upper and lower semiconductor elements should be directly opposed to each other. And the bottom of the module plate 11 is always present between them. Therefore, the heat generated in each semiconductor element 1 does not directly affect each other, and the heat generated in the semiconductor element 1 is radiated from the side surface through the module plate 11, so that the semiconductor elements are It is possible to prevent the semiconductor device from being damaged by being heated and improve the heat resistance of the semiconductor device. As a result, even when this semiconductor device is used in space-borne equipment, it becomes possible to construct equipment with a long life and high reliability.

A clamper for sandwiching the mother board and the uppermost unit unit may be used as a structure in which a plurality of unit units and the cushioning member are laminated and fixed to each other. With this clamper, the unit units are mechanically connected, and the upper and lower unit units and the cushioning member are pressed to be electrically connected. The use of this clamper facilitates replacement of the unit units, which is advantageous for maintenance, as compared with the case where they are integrated by adhesion.

[0014]

As described above, according to the present invention, a plurality of unit units each having a semiconductor element mounted on a module plate are laminated, and respective connection patterns are electrically connected to each other. Since the configuration is such that an anisotropic conductive cushioning member is inserted, the semiconductor elements are mounted in a laminated structure to increase the packaging density, while shocks and vibrations applied to the unit units are absorbed by the cushioning member, and Prevents shock and vibration from being applied,
Vibration resistance of the semiconductor device can be improved. Also,
Since the module plate that constitutes the unit unit is provided with a concave portion and the semiconductor element is provided inside this concave portion, even when the unit units are stacked, the semiconductor elements are not directly opposed to each other and the influence of heat between the semiconductor elements is not exerted. In addition to being avoided, the heat generated in the semiconductor element can be radiated through the module plate, and the heat resistance of the semiconductor device can be improved.

[Brief description of drawings]

FIG. 1 is a partially exploded perspective view of a unit unit according to a semiconductor device of the present invention.

FIG. 2 is a plan view and a cross-sectional view of the unit unit shown in FIG.

FIG. 3 is a partially exploded perspective view of a semiconductor device including a plurality of unit units.

4 is a sectional view of the semiconductor device of FIG. 3 in an assembled state.

FIG. 5 is a sectional view showing an example of a conventional semiconductor device having a laminated structure.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 TAB tape 4 Lead 10 TAB device 11 Module plate 12 Recesses 13 and 14 Connection pattern 20 Unit unit 21 Buffer member (anisotropic conductive resin or rubber) 22 Motherboard 23 Connection pattern

Claims (3)

[Claims] 1. A unit unit having a semiconductor element mounted on a plate-shaped module plate, the unit unit having a connection pattern connected to the semiconductor unit on the front and back surfaces thereof, and the unit unit having a plurality of unit units interposed therebetween. A semiconductor device, comprising: an anisotropic conductive cushioning member electrically connecting the working patterns to each other. 2. The semiconductor device according to claim 1, wherein the module plate is formed in the shape of a rectangular plate, and the peripheral surfaces of the module plate have connection patterns connected to each other by through holes, and the central portion has a recess. 2. The semiconductor device according to claim 1, wherein the element is mounted on a lead supported by a tape, and the lead is connected to the connection pattern in a state of being installed in the recess. 3. The semiconductor according to claim 1, wherein the anisotropic conductive cushioning member is made of anisotropic conductive resin or anisotropic conductive rubber and absorbs shock and vibration between unit units. apparatus.