JPH06275498A - Method and device for manufacturing x-ray mask - Google Patents

Abstract

PURPOSE:To provide a manufacturing method and device for obtaining an X-ray mask of higher flatness, with no depression at the central part of the X-ray mask, than conventional X-ray masks. CONSTITUTION:In joint process, a supporting member 8, having the configuration that allows entrance into the opening part of a reinforcement frame 5, is inserted, and while the joint surface of the reinforcement frame 5 and the surface of the supporting member 8 are assigned on the same plane, they are pressurized for joining, thus the depression at the central part of an X-ray mask 3 is removed for a mask of high-level of flatness.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray mask manufacturing apparatus and manufacturing method, and more particularly to joining an X-ray mask and a reinforcing frame.

[0002]

2. Description of the Related Art In recent years, X-ray lithography using X-rays having a shorter wavelength than that of ultraviolet rays has attracted attention as a means of overcoming the limit of pattern miniaturization by exposure to ultraviolet rays.
In this X-ray lithography, unlike the exposure method using ultraviolet rays, there is currently no technique for reducing and transferring a predetermined pattern. Therefore, an X-ray mask that selectively transmits X-rays is arranged between the X-ray source and the exposure target, and the X-ray is irradiated through the X-ray mask to form a transfer pattern on the surface of the exposure target. 1: 1 transfer method (equal magnification transfer method) is adopted.

In this equal-magnification transfer system, the dimensional accuracy and the positional accuracy of the X-ray mask pattern directly become the device accuracy, so that the dimensional accuracy of the X-ray mask pattern is about 1/10 of the minimum line width of the device. , Position accuracy is required.
Therefore, in order to realize X-ray lithography, the development of an X-ray mask manufacturing method that can realize highly accurate pattern formation of the X-ray absorption film is the most important key.

The X-ray mask generally has the following structure. That is, a thin film (X-ray transmissive film) made of an X-ray transmissive material having a particularly low X-ray absorptivity is provided on a ring-shaped mask substrate, and the X-ray absorptivity is provided on the X-ray transmissive film. It has a structure in which a mask pattern (X-ray absorbing film) made of a large material is formed. The mask substrate is
Since the X-ray transparent film is extremely thin and mechanically weak, it is provided to support the mask when forming it.

The above-mentioned X-ray mask is formed as follows in the conventional manufacturing method. First, an X-ray transmission film and an X-ray absorption film are sequentially formed on the mask substrate, and the mask substrate is joined to the reinforcing frame. Next, electron beam drawing is performed to etch the X-ray absorbing film, and then the mask substrate is etched from the back surface (hereinafter referred to as back etching).
Do. In this method, since back etching is performed with the mask substrate attached to the reinforcing frame, the strength of the mask substrate is not required so much and the risk of mask destruction is reduced.

Although the X-ray mask is formed in this manner, the X-ray mask before bonding is presently warped in a concave shape by about 10 μm due to the internal stress of the X-ray transmitting film, the X-ray absorbing film and the like ( FIG. 6A). Further, since the reinforcing frame has an opening portion in the center, it is difficult to correct the warp of the concave X-ray mask sufficiently to form an X-ray mask with little distortion simply by joining the two as they are. Therefore, the shape of the X-ray mask corresponding to the position of the opening of the reinforcing frame is still depressed by about 2 to 3 μm (FIG. 6 (b)). Therefore, the shape of the X-ray mask formed as a result is also distorted, and there is a problem that an X-ray mask having a high flatness cannot be obtained.

[0007]

As described above, in the step of joining the X-ray mask and the reinforcing frame, the X-ray mask before joining is affected by the internal stress of the X-ray transmitting film, the X-ray absorbing film or the like.
It is warped about 0 μm in a concave shape, and since the reinforcing frame has an opening in the center, it was manufactured by joining both as they are.
In the line mask, X corresponding to the position of the opening of the reinforcing frame
The shape of the line mask is dented, and there is a problem that an X-ray mask with high flatness cannot be obtained.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an apparatus and a method for manufacturing an X-ray mask having high flatness in the step of joining the X-ray mask and the reinforcing frame. To provide.

[0009]

In order to solve the above-mentioned problems, the present invention provides a mask substrate, an X-ray transmission film formed on the mask substrate, and an X-ray transmission film formed on the X-ray transmission film.
An X-ray mask holding unit that holds an X-ray mask including a X-ray absorbing film, a reinforcing frame holding unit that holds a reinforcing frame that reinforces the X-ray mask, the mask substrate, and the reinforcing frame are added. An X-ray mask comprising: joining means for joining by pressure; and a supporting member that is inserted into a region surrounded by the reinforcing frame and has a supporting surface that is substantially in the same plane as the joining surface of the reinforcing frame. To provide a manufacturing apparatus.

The present invention also holds an X-ray mask comprising a mask substrate, an X-ray transparent film formed on the mask substrate, and an X-ray absorbing film formed on the X-ray transparent film. An X-ray mask holding unit, a reinforcing frame holding unit that holds a reinforcing frame that reinforces the X-ray mask, joining means that joins the mask substrate and the reinforcing frame by pressure, and is surrounded by the reinforcing frame. A support member to be inserted into the recessed region, and alignment means for aligning the support surface of the support member so that the support surface is substantially in the same plane as the joint surface of the reinforcing frame. An X-ray mask manufacturing apparatus is provided.

The present invention further provides an X-ray mask having a mask substrate, an X-ray transparent film formed on the mask substrate, and an X-ray absorbing film on the X-ray transparent film, and the X-ray mask.
A step of holding each of the reinforcing frames for reinforcing the line mask at predetermined positions, and a supporting member for supporting the mask substrate in an area surrounded by the reinforcing frame, a supporting surface of the supporting member and the reinforcing frame. The step of arranging so that the one surface is in the same plane, the X-ray mask and the reinforcing frame held at the predetermined position are brought close to each other, and the surface of the mask substrate and the one surface of the reinforcing frame are bonded by pressure. The present invention provides a method for manufacturing an X-ray mask, which comprises:

[0012]

According to the X-ray mask manufacturing apparatus and manufacturing method of the present invention, in the step of joining the X-ray mask and the reinforcing frame, the upper surface of the supporting member inserted in the region surrounded by the reinforcing frame is the reinforcing frame. By joining the reinforcing frame and the X-ray mask by pressurization so as to be substantially in the same plane as the joint surface, when the X-ray mask warps convexly toward the reinforcing frame at the time of joining, Since the pressing force acts on the contact portion between the convex portion of the mask substrate and the supporting member as a fulcrum, the convex portion of the mask substrate is not deformed until the joint surface of the mask substrate is joined to the joint surface of the reinforcing frame. As a result, the warp is corrected. Therefore, since the X-ray mask is joined to the reinforcing frame in a flat shape, it is possible to obtain an X-ray mask having high flatness.

When the surface opposite to the bonding surface of the X-ray mask is adsorbed and held on the reference surface whose flatness is controlled, the X-ray mask is adsorbed by the reference surface. It is deformed until the X-ray mask comes into close contact with the reference surface,
The above-mentioned warpage of the X-ray mask is corrected. Therefore,
Since the X-ray mask is joined to the reinforcing frame in a flatter shape, it is possible to obtain an X-ray mask having higher flatness.

[0014]

Embodiments of an X-ray mask manufacturing apparatus and manufacturing method according to the present invention will be described below with reference to the drawings. Embodiment 1 FIG. 1 is a sectional view showing an embodiment of an X-ray mask manufacturing apparatus according to the present invention, and FIG. 2 is a process sectional view showing an embodiment of an X-ray mask manufacturing method according to the present invention. is there.

As shown in FIG. 1, in the X-ray mask manufacturing apparatus of this embodiment, an X-ray mask holder 2 is installed above the fixed pedestal 1, and an X-ray in the process of manufacturing is provided on the lower surface of the holder 2. The mask 3 is held. Reference numeral 4 denotes a joining pressurizing unit, by which the X-ray mask is joined to a reinforcing frame 5 described later.

A reinforcing frame holding portion 6 is installed directly above the fixed base 1, and the reinforcing frame 5 is held on the upper surface of the holding portion 6. Here, the reinforcement frame 5 is fixed on the reinforcement frame holding portion 6 by, for example, a vacuum chuck. A reinforcing frame opening 7 is provided at the center of the reinforcing frame holding portion 6, and a supporting member 8 is vertically inserted into the opening 7 by a vertical movement control mechanism 9. Here, the support member 8 is
The central axis 10 of the upper surface may be installed so as to overlap the central axis 11 of the reinforcing frame 5. Further, 12 and 13 are height direction displacement detection mechanisms by the laser beam 15, which detect height direction displacement of the upper surface of the support member 8. The displacement in the height direction is monitored by the height direction detection monitor unit 14.

Next, the operation of the support member 8 will be specifically described. It is important in the present invention that the support member 8 is installed so that its upper surface is in the same plane as the upper surface of the reinforcing frame 5. By installing the support member 8 in this manner, the X-ray mask 3 It becomes possible to obtain an X-ray mask with suppressed distortion and high flatness. In the present embodiment, the upper surface of the supporting member 8 is irradiated with the laser light 15, and the reflected light 16 of the laser light is used to measure the displacement in the height direction of the upper surface of the supporting member 8. That is, first, the height direction displacement detection mechanism (light emitting unit) 12 emits a laser beam 15, and the laser beam 15 is applied to the joint surface (upper surface) of the reinforcing frame 5. The laser light 16 reflected by these surfaces is incident on the height direction displacement detection mechanism (light receiving section) 13 and is monitored by the height direction detection monitor section 14 by this laser light 16. Based on this monitoring, the height adjustment is performed by the vertical movement control mechanism 9 so that both surfaces become the same plane, and the support member 6 is fixed. As described above, the X-ray mask 3 and the reinforcing frame 5 are joined together by the joining pressurizing unit 4 in a state in which the two planes are in the same plane.
To join.

Next, an example of forming an X-ray mask by using the present invention will be described. 2A to 2L are process cross-sectional views in the formation thereof. (Step A) First, in a high-frequency heating LPCVD apparatus, a 3-inch S having a thickness of 600 μm, which was polished on both sides in a plane orientation (100) on a SiC-coated susceptor
The i substrate 101 was installed, and the Si substrate 101 was subjected to vapor phase etching with hydrogen chloride (HCl) gas at 1000 ° C. to remove the natural oxide film and the heavy metal contaminants existing on the Si substrate 101. This makes Si
The substrate surface cleaning process is completed. Next, as shown in FIG. 2A, silane (SiH ₄ ) is used as a Si raw material, acetylene (C ₂ H ₂ ) is used as a C raw material, hydrogen chloride (HCl) is added gas, and hydrogen (H ₂ ) is used as a carrier gas. When each gas is supplied and the substrate temperature is 1100 ° C., the Si substrate 101
A SiC film 102 was deposited thereon to a thickness of 1 μm.

(Step B) Next, as shown in FIG. 2B, an alumina film 103 to be an antireflection film is formed to a thickness of 98 μm by a magnetron sputtering device. The conditions for sputtering are applied power of 1 kW and Ar pressure of 3 mT.
orr. Here, this antireflection film (alumina film 1
03) is provided to align the X-ray mask and the wafer on which the transfer pattern is formed with high accuracy. As shown in FIG. 2C, a C film 104 is formed on the back surface of the Si substrate 101 by a magnetron sputtering apparatus.
After depositing 1 μm, a resist pattern 105 is formed on the C film 4 in the region excluding the central 40 mmφ opening and the portion corresponding to the joining region of the reinforcing frame. And Figure 2
As shown in (d), the C film 104 was removed by reactive ion etching using a fluorine-based gas with the resist pattern 105 as a mask. CF ₄ is used as etching gas
And the applied power was 100 W and etching was performed under the condition that the self-bias voltage was 1000 V or less, so that the exposed Si surface was not damaged. Further, subsequently, by a dry etching method using oxygen plasma, a 40 mmφ opening 106 of the exposed Si substrate 101 and a bonding surface 107 for bonding the reinforcing frame 5 to each other.
Both surfaces were etched. The applied power was set to 50 W so as not to damage the surface after the oxygen plasma treatment.

(Step C) Next, a W film 108 serving as an X-ray absorbing film was deposited to 0.5 μm on the alumina film 103 by a magnetron sputtering device. The applied power is
The pressure was set to 1.7 kW, and the gas pressure was set to 3 mTorr at which the stress became zero on the low pressure side where a W film having a high density could be formed. The stress of the formed W film 108 was 2 × 10 ⁷ N / m ² as a result of measurement from the warp of the Si substrate 101. Then, Ar ions are applied to the W film 108 at an energy of 180 k.
eV was injected at a dose of 2 × 10 ¹⁵ ions / cm ² so that the stress of the W film 108 became zero. Then W
Alumina film 109 serving as an etching mask on the film 108
With a magnetron sputtering device to a thickness of 50 nm
To form. Immediately after the steps so far, the process shown in FIG.
As shown in (e), the Si substrate 101 side extends and the W film 1
The Si substrate 101 is warped due to contraction on the 08 side.
The amount of warpage was about 10 μm.

(Step D) Then, as shown in FIG. 2 (f), a reinforcing frame (outer diameter 10
(0 mmφ, 52 mmφ opening diameter, surface accuracy 0.1 μm or less)
5 and the bonding surface 107 of the Si substrate 101 which is the mask substrate
Were bonded at room temperature by direct bonding using the X-ray mask manufacturing apparatus according to the present invention in FIG. In the joining, first, while monitoring the displacement of the joining surface of the reinforcing frame 5 and the upper surface of the supporting member 8 in the height direction using the above-mentioned device by an optical system detector, the opening of the reinforcing frame has an outer diameter of 30 mmφ and surface accuracy. A supporting member having a thickness of 0.1 μm or less was inserted so that the height difference between them was adjusted to be within 0.3 μm.

At the time of step bonding, the central portion of the Si substrate 101 first contacts the supporting member 8. However, as described above, the upper surface of the supporting member 8 is flush with the bonding surface of the reinforcing frame 5. Since it is inside, an X-ray mask with high flatness could be formed by bonding as shown in FIG. Where X
An O-ring 17 is interposed between the X-ray mask 3 and the X-ray mask holding unit 2, and a pressure of about 1 kgf / cm ² is applied to X-ray mask X.
The line mask 3 was joined to the reinforcing frame 5. The O-ring 17 is
It is used to average the pressure applied to the X-ray mask 3 at the time of bonding. Further, heat treatment was performed at 200 ° C. for 1 hour to increase the bonding strength.

(Step E) Next, as shown in FIG. 2H, an electron beam resist (SAL) is formed on the alumina film 109.
601) 110 is applied, and the resist 110 is drawn by an electron beam drawing device to form a desired pattern. The irradiation dose was 13 μC / cm ² . Next, as shown in FIG. 2I, the plasma etching apparatus is used to etch the alumina film 109 using the etching gas BCl ₃ with the resist 111 as a mask. Then, after removing the resist by oxygen plasma, as shown in FIG. 2 (j), the W film 108 is anisotropically etched using SF ₆ + CHF ₃ as an etching gas and using the alumina pattern 109 as a mask.

(Step F) Next, as shown in FIG. 2K, the Si substrate 101 is opened from the opening 106 by using the C film 104 as a mask with a potassium hydroxide solution having a concentration of 30% heated to 95 ° C. Etched in liquid phase. The surface opposite to the etched surface was protected with ethylene glycol monoethyl ether acetate heated to 95 ° C. As a result, an opening having a diameter of 40 mm was formed.

(Step G) Next, as shown in FIG. 2L, an alumina film 111 as an antireflection film is formed on the surface opposite to the surface on which the X-ray absorbing film has a thickness of 98 nm by a sputtering method. Form.

It was confirmed that the shape of the X-ray mask formed by the above steps had a high degree of flatness without the depression of the X-ray mask corresponding to the position of the opening of the reinforcing frame. In the flatness measurement by the He-Ne laser interferometer,
The measurement limit was 0.3 μm or less.

The present invention is not limited to the above embodiment. For example, in the case where the joining surface of the reinforcing frame and the supporting surface of the supporting member are aligned in the same plane during the joining process, if the height difference between the both surfaces is about ± 0.3 μm, they are on the same plane. You can regard it as inside.

Further, as the material of the supporting member, semiconductors such as Si, metals such as Al, glass, ceramics and the like can be considered. Furthermore, as for the shape and size of the supporting member, as long as it acts as a fulcrum for eliminating the depression of the X-ray mask when a force is applied by direct joining and can enter the opening of the reinforcing frame. There is no particular limitation. Embodiment 2 FIG. 3 shows an embodiment relating to an X-ray mask manufacturing apparatus according to the present invention. In this figure, the same parts as those in FIGS. 1 and 2 are designated by the same reference numerals, and detailed description thereof will be omitted.

In the X-ray mask manufacturing apparatus shown in FIG. 3, the X-ray mask 3 is vacuum chucked and attached to the reference glass surface 18, which is an X-ray mask holding portion and whose flatness is controlled. Similar to the X-ray mask manufacturing apparatus according to the present invention shown in FIG. 2, the support member 8 is inserted into the reinforcing frame opening by the vertical movement control mechanism 9. Further, at the time of this insertion, the heights of the upper surface of the support member 8 and the joint surface of the reinforcing frame 5 are monitored by the height direction displacement detection monitor section 14 by the height direction displacement detection sections 12 and 13 using the laser beam 15, respectively. The height adjustment is performed by the vertical movement control mechanism 9 so that the two surfaces are flush with each other, and then the support member 8 is fixed. Thus, the X-ray mask 3 and the reinforcing frame 5 are joined by the joining pressurizing unit 4 in the same plane state.

An example of forming an X-ray mask by using the X-ray mask manufacturing apparatus according to the present invention shown in FIG. 3 will be described next. FIGS. 4A to 4L are process cross-sectional views at the time of forming the same.

Similar to the first embodiment, steps A to C (see FIG.
When (a) to (e) are performed, the amount of warpage of the Si substrate 101 as the mask substrate immediately after the steps up to this point is about 10 μm, which is similar to the first embodiment.

Next, as shown in FIG. 4F, in the X-ray mask manufacturing apparatus according to the present invention, the Si substrate 101 as a mask substrate is warped with respect to the reference glass surface 18 having a surface flatness of 0.1 μm. The above-mentioned X-ray mask 3 in which the above-mentioned phenomenon was generated was attached by a vacuum chuck. By this vacuum adsorption,
The above warp has been corrected considerably.

Next, about 1 kgf / cm from the joining pressure section 4
A pressure of ² was applied to bond the bonding surface 107 of the Si substrate 101 to the upper surface of the reinforcing frame 5 at room temperature. Here, the reinforcing frame is made of quartz glass whose surface is polished, and has an outer diameter of 100 mmφ and an opening diameter of 52.
It is processed to have a mmφ and surface accuracy of 0.1 μm or less.

Further, heat treatment was carried out at 200 ° C. for 1 hour to increase the bonding strength (FIG. 4 (g)). After this, steps E to G (FIGS. 4 (h) to 4 (l)) as in the first embodiment.
As a result, it was confirmed that the shape of the X-ray mask formed in this step had no depression of the X-ray mask corresponding to the opening portion of the reinforcing frame and had high flatness. In the flatness measurement by the He-Ne laser interferometer,
The measurement limit was 0.3 μm or less.

In this embodiment, as compared with the first embodiment, the warp of the substrate is corrected by adhering the mask substrate to the mask substrate holding portion (reference glass surface 18), and in that state, it is directly bonded to the supporting member 8. Therefore, the X-ray mask having higher flatness could be formed.

The present invention is not limited to the above embodiment. For example, the material of the reference surface 18 that is the mask substrate holding portion in the X-ray mask manufacturing apparatus is not limited to glass, and if the surface accuracy is 0.1 μm or less, S
It may be a semiconductor such as i, a metal such as Al, or a ceramic. Example 3 As means for aligning the joint surface of the reinforcing frame and the upper surface (support surface) of the support member on the same plane, in addition to the alignment by the laser beam, a capacitance type gap sensor as shown below is used. You may use. FIG. 5 is a schematic sectional view showing an embodiment relating to an X-ray mask manufacturing apparatus according to the present invention using this. In this figure, the same parts as those in FIGS. 1 and 2 are designated by the same reference numerals, and detailed description thereof will be omitted.

In the X-ray mask manufacturing apparatus of FIG. 5, a reinforcing frame holding portion 6 is installed directly above the fixed pedestal 1, and the reinforcing frame 5 is held on the upper surface of the holding portion 6. Here, the reinforcing frame 5 is
For example, it is fixed on the reinforcing frame holder 6 by a vacuum chuck. A reinforcing frame opening 7 is provided at the center of the reinforcing frame holding portion 6, and a supporting member 8 is vertically inserted into the opening 7 by a vertical movement control mechanism 9.
Further, 19 to 21 are height direction displacement detection mechanisms, which detect a height direction displacement of the support member 8.

Next, the operation of the support member 8 will be specifically described. It is important in the present invention that the upper surface of the supporting member 8 is in the same plane as the upper surface of the reinforcing frame 5 as in the apparatus of the embodiment shown in FIG. 1. By installing the supporting member 8 in this manner, X of high flatness suppressing distortion of X-ray mask
It is possible to obtain a line mask. In this embodiment, a height direction displacement detection mechanism (sensor part) 19 installed on the surface of the vertical movement control mechanism 9 and a height direction displacement detection mechanism (target part) 20 installed on the lower surface of the support member 8. The value of the electrostatic capacitance between and is detected, and the detected information is sent to the height direction displacement detection mechanism (control unit) 21 via the wiring 22. The target unit 20 is installed here. The control unit 21 obtains the distance between the sensor unit 19 and the target unit 20 from the value of the capacitance, and the control unit 21 raises the distance so that the upper surface of the support member 8 and the upper surface of the reinforcing frame 5 are in the same plane. The support member 8 is fixed by performing alignment. Therefore, the X-ray mask and the reinforcing frame can be joined in a state where the two planes are in the same plane.

Further, in the above-mentioned first to third embodiments, the magnitude of the pressing force at the time of joining and the region on which the force acts may be any size and region required for joining. EB resist is also S
It is not limited to AL601, but may be CMS of novolac resist. Further, as a method for adsorbing the mask substrate, it is possible to form an X-ray mask having high flatness by using either a vacuum chuck method or an electrostatic chuck method. The X-ray absorbing film is not limited to W, but Ta, Au
It is also possible to use a nitride or a carbide thereof. Also in the X-ray transparent film, not only SiC but also SiNx, BN, or boron-doped Si can be used. The etching mask of the Si substrate is not limited to C, but SiC, Si
Nx and SiCNx can also be used. Furthermore, Si
The etching solution for the substrate is not limited to the KOH solution, but may be a mixed solution of hydrofluoric acid and nitric acid. In addition, various modifications can be made without departing from the scope of the present invention.

[0040]

As described above, according to the X-ray mask manufacturing apparatus and manufacturing method of the present invention, in the step of joining the X-ray mask substrate and the reinforcing frame, the supporting member installed in the opening of the reinforcing frame is used. The warp of the X-ray mask can be corrected, and finally an X-ray mask with high flatness can be obtained.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of an X-ray mask manufacturing apparatus according to the present invention.

FIG. 2 is a cross-sectional view showing an example of a manufacturing process of an X-ray mask according to the present invention.

FIG. 3 is a sectional view showing an embodiment of an X-ray mask manufacturing apparatus according to the present invention.

FIG. 4 is a cross-sectional view showing an embodiment of the manufacturing process of the X-ray mask according to the present invention.

FIG. 5 is a schematic sectional view showing an embodiment relating to an X-ray mask manufacturing apparatus according to the present invention.

FIG. 6 is a schematic cross-sectional view showing a conventional X-ray mask bonding process.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Fixed pedestal 2 ... X-ray mask holding part 3 ... X-ray mask 4 ... Joining pressurizing part 5 ... Reinforcement frame 6 ... Reinforcement frame holding part 7 ... Reinforcement frame opening 8
... Support member 9 ... Vertical motion control mechanism 10 ... Support member central axis 11 ... Reinforcing frame central axis 12 ... Height direction displacement detection mechanism (light emitting portion) 13 ... Height direction displacement detection mechanism (light receiving portion) 14 ... Height Vertical displacement detection monitor unit 15 ... Laser light 16 ... Laser light (reflected light) 17 ... O-ring 18 ... Reference glass surface 19 ... Height direction displacement detection mechanism (sensor unit) 20 ... Height direction displacement detection mechanism (target 21) ... Height direction displacement detection mechanism (control section) 22 ... Wiring 101 ... Si substrate 102 ...
SiC film 103 ... Alumina film 104 ... C film 105 ... Resist 106 ... Si substrate opening 107 ... Bonding surface 108 ...
W film 109 ... Alumina film 110 ... Resist 111 ... Alumina film

Claims (9)

[Claims] 1. A mask substrate, an X-ray transparent film formed on the mask substrate, and an X film formed on the X-ray transparent film.
An X-ray mask holding unit that holds an X-ray mask including a X-ray absorbing film, a reinforcing frame holding unit that holds a reinforcing frame that reinforces the X-ray mask, the mask substrate, and the reinforcing frame are added. An X-ray mask comprising: joining means for joining by pressure; and a supporting member that is inserted into a region surrounded by the reinforcing frame and has a supporting surface that is substantially in the same plane as the joining surface of the reinforcing frame. Manufacturing equipment. 2. A mask substrate, an X-ray transmission film formed on the mask substrate, and an X formed on the X-ray transmission film.
An X-ray mask holding unit that holds an X-ray mask including a X-ray absorbing film, a reinforcing frame holding unit that holds a reinforcing frame that reinforces the X-ray mask, the mask substrate, and the reinforcing frame are added. The joining means for joining by pressure, the supporting member inserted into the region surrounded by the reinforcing frame, and the supporting surface of this supporting member are aligned so that they are substantially in the same plane as the joining surface of the reinforcing frame. An apparatus for manufacturing an X-ray mask, comprising: an alignment unit for performing the alignment. 3. The X-ray mask manufacturing apparatus according to claim 1, wherein an elastic body is provided on a surface of the X-ray mask opposite to the bonding surface. 4. A detecting means for detecting the height of at least one of the joint surface of the reinforcing frame and the supporting surface of the supporting member, and the reinforcing frame of the reinforcing frame based on the height detected by the detecting means. It has a moving means for moving at least one of the supporting member and the reinforcing frame holding portion in the height direction so that the joint surface and the supporting surface of the supporting member are substantially in the same plane. The X-ray mask manufacturing apparatus according to claim 2. 5. The X-ray mask manufacturing apparatus according to claim 1, wherein the holding surface of the X-ray mask holding portion is a reference surface whose flatness is controlled. 6. The X-ray mask manufacturing apparatus according to claim 5, wherein the reference surface has a surface accuracy of 0.1 μm or less. 7. An X-ray mask having a mask substrate, an X-ray transmission film formed on the mask substrate, and an X-ray absorption film on the X-ray transmission film, and reinforcement for reinforcing the X-ray mask. A step of holding each frame at a predetermined position, and a supporting member for supporting the mask substrate in a region surrounded by the reinforcing frame, the supporting surface of the supporting member and one surface of the reinforcing frame being on the same plane. And a step of bringing the X-ray mask and the reinforcing frame held at the predetermined position close to each other, and bonding the surface of the mask substrate and the one surface of the reinforcing frame by pressure. A method for manufacturing an X-ray mask, comprising: 8. The holding of the X-ray mask is performed by adsorbing a surface opposite to a surface to which the X-ray mask is joined with respect to a reference surface whose flatness is controlled. X-ray mask manufacturing method. 9. The method of manufacturing an X-ray mask according to claim 8, wherein the suction between the X-ray mask and the reference surface is performed using a vacuum chuck or an electrostatic chuck.