JPH06260677A - Manufacture of reader - Google Patents

Abstract

PURPOSE:To provide a method for manufacturing a reader having a lower electrode, at least two types or more of semiconductor layers laminated to form a photoelectric converter and an upper electrode laminated on a board with small defect such as leakage, etc. CONSTITUTION:First semiconductor layers 14b, 16b to be formed at least on lower electrodes 14a, 16a are formed by setting a flow rate of SinH2n+2/H2 (n is positive integer) to 1/40 or less.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a reading device, and more particularly to a method for manufacturing a reading device used in an image reading unit for inputting image information in a facsimile, an image scanner or the like.

[0002]

2. Description of the Related Art In recent years, a reading device generally called a contact type image sensor has been widely adopted for an image reading portion of a facsimile or the like, instead of a CCD type reading device which requires a reduction optical system. For example, as shown in FIG. 5, a conventional reader 1 is for reading a photodiode 3 which is a photoelectric conversion element, a blocking diode 4 which is a switching element, and an electric signal from the photodiode 3 on a glass substrate 2. Channel wiring C _1,
C _{2, ...} C _n are formed and configured.

The photodiode 3 and the blocking diode 4 are both opaque lower electrodes 3a and 4a made of metal and a pin made of amorphous silicon.
Structured semiconductor layers 3b and 4b and ITO (Indium Tin Oxi
de) and transparent upper electrodes 3c and 4c are sequentially deposited. Then, the photodiode 3 and the blocking diode 4 are covered with a transparent interlayer insulating film 5 made of SiO _x, and are connected in series in reverse polarity by a connection wiring 7 through a contact hole 6 formed in the interlayer insulating film 5. Has been done. On the other hand, the lower electrode 3a forming the photodiode 3 has the channel wirings C _1, C via the contact hole 8 formed in the interlayer insulating film 5.
_{2, ...} are connected to the C _n, further, the whole of these protective film 9
It is covered and configured by.

As shown in FIG. 6, the photodiode 3 and the blocking diode 4 are dimensionally m × n.
M blocks B _1, B _{2, ...} B arranged every n blocks
_It is divided into _m . The anode electrodes of the blocking diodes 4 are commonly connected within the blocks B _1, B _{2, ...} B _m , while the anode electrodes of the photodiodes 3 are connected to the channel wirings C _1, C _{2, ...} C _n. By block B
_1, B _{2, ...} B _m are relatively connected at the same position, and are connected in common.

[0005]

In the reading device 1 having such a structure, m × n pieces, for example, 172 of A4 size are used.
If there is a defect in one of the eight photodiodes 3 and blocking diodes 4 arranged, the reading device 1 cannot be used as a defective product. Therefore, when the cause of the defect was investigated for the reading device 1 having the defect, it was found that the adhesion between the semiconductor layers 3b and 4b and the lower electrodes 3a and 4a on the substrate 2 had an influence.

Here, the semiconductor layers 3b and 4b of the photodiode 3 and the blocking diode 4 are made of SiH ₄ ,
A p-type layer, an i-type layer, and an n-type layer are formed by glow discharge of a mixed gas of H ₂ , PH ₃ , B ₂ H _6, and the like. Of these layers, the p-type layer and the n-type layer are B ₂ H ₆ and PH.
₃ was diluted with H ₂ to 1000 ppm, and the flow rate ratio of SiH ₄ / H ₂ was set to about 3/20 or more to decompose and film-form. This condition is set so that the dopant concentration is about 1% with respect to Si so that the electric conductivity in the dark state at 20 ° C. is 10 ⁻⁶ (Ωcm) ⁻¹ or more, which is effective as a photovoltaic element. This was because they tried to use photocurrent.

That is, in a photovoltaic element (on the order of μA to mA) in which a large current flows, such as a solar cell, the performance is improved by improving the electric conductivity.
On the other hand, the minute leak current could be ignored. However, a reading device such as an image sensor has a very small current (on the order of nA to pA), and even if it is very small, the leak current cannot be ignored.

Therefore, the inventors of the present invention have conducted intensive studies for the purpose of stably obtaining a reading device having no leak in any photoelectric conversion element, and as a result, the present invention has been achieved.

[0009]

That is, the gist of the method for manufacturing a reading device according to the present invention is that at least a lower electrode is deposited on a substrate, and at least two or more conductive materials are provided on the lower electrode. A method for manufacturing a reading device comprising a photoelectric conversion element including a photoelectric conversion layer formed by stacking type semiconductors, and an upper electrode formed on the photoelectric conversion layer, the photoelectric conversion element comprising: at least the flow rate ratio of said first semiconductor layer formed on the lower electrode _{Si n H 2n + 2 / H} 2 (n is a positive integer) of the layers 1/4
The film is formed at 0 or less.

In the method of manufacturing a reading device according to the present invention, the H ₂ is hydrogen as a diluent and phosphine,
Including a dopant material such as PH ₃ or diborane.

In the method of manufacturing a reading device according to the present invention, the film forming gas for the first semiconductor layer is Si.
Among H ₄ , high-order silane, phosphine, diborane, hydrogen, and the like, at least SiH ₄ , high-order silane, and hydrogen are included.

Further, in the method of manufacturing a reading device according to the present invention, the photoelectric conversion element includes a photodiode and a blocking diode connected in series to the photodiode in reverse polarity.

[0013]

According to the method of manufacturing a reading device of the present invention, at least a conductive semiconductor is formed when a photoelectric conversion layer made of at least two kinds of conductive semiconductors is laminated on a lower electrode deposited on a substrate. the first semiconductor layer formed on the lower electrode of the different materials and, Si _n H
The flow rate ratio of _{2n + 2} / H ₂ (n is a positive integer) is set to 1/40 or less to form a film. Where Si _n H _{2n + 2}
(N is a positive integer) includes silane or higher silane, and H
₂ may include a dopant material such as phosphine, PH ₃ or diborane with hydrogen as a diluent. Therefore,
The first semiconductor layer is gradually and densely deposited on the lower electrode and is deposited with almost no defects such as holes. Then, after the second semiconductor layer, the flow rate ratio may be similarly set to 1/40 or less and deposited, but the flow rate ratio is set to about 1/10 to 1/20 as in the conventional case. You can Since the second and subsequent semiconductor layers are deposited on the same type of semiconductor layer, even if the deposition rate is increased, almost no defects occur.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method of manufacturing a reading device according to the present invention will be described in detail with reference to the drawings.

First, as shown in FIG. 1, a reading apparatus 10 according to the present invention has a photodiode 14 as a photoelectric conversion element on an optically transparent substrate 12 made of glass or the like.
And a blocking diode 1 which is a switching element
6 and channel wirings C _1, C _{2, ...} C _n for reading an electric signal from the photodiode 14 are formed. Here, the photodiode 14 and the blocking diode 16 form an optical sensor element.

The photodiode 14 and the blocking diode 16 are both Cr, Ni, Pd, Ti, Mo and T.
Lower electrodes 14a, 16a made of metal layers such as a and Al
And photoelectric conversion layers 14b and 16b having a pin structure made of amorphous silicon and ITO (Indium Tin Oxid)
The transparent upper electrodes 14c and 16c made of e) or the like are deposited in this order. The photodiode 14 and the blocking diode 16 are made of SiO _x or SiN.
They are covered with a transparent interlayer insulating film 18 made of _x or the like, and are connected in series with opposite polarities by connection wirings 22 via contact holes 20 formed in the interlayer insulating film 18. That is, the photodiode 14 and the blocking diode 16 are connected by the cathode electrodes. On the other hand, the lower electrode 14 of the photodiode 14
a is a contact hole 24 formed in the interlayer insulating film 18
Are connected to the channel wirings C _1, C _{2, ...} C _n via. Further, all of them are covered with a protective film 26.

As in the conventional case, the photodiode 14 and the blocking diode 16 are one-dimensionally m ×.
There are n blocks, and m blocks B _1, B _{2, ...}
Have been classified into B _m, anode electrode blocks B _1, B 2 blocking diodes _{16, ...} they are connected in common in a B _m, anode electrode channel wiring C ₁ of the photodiode _14, C _{2,. .. by} C _n blocks B _1, B
_{2, 2, ...,} B _m , which are relatively in the same position, are commonly connected.

Here, an example of a method of manufacturing the reading device 10 will be briefly described.

First, a metal film (14a, 16a) of Cr, Ni, Pd, Ti, Mo, Ta, Al or the like is formed on the substrate 12 by a vacuum deposition method using an electron beam or resistance heating, or a sputtering method using DC or RF. ) Is deposited. Then, a p-type amorphous silicon film, which is the first semiconductor layer, in which holes serve as majority carriers, an i-type amorphous silicon film, which serves as an intrinsic semiconductor, and n become electrons in which majority carriers are formed, by plasma CVD or the like. Type amorphous silicon film is continuously deposited.

Here, p, which is the first-conductivity-type semiconductor layer, is used.
Type Si _n H _{2n + 2} /
It can be obtained by forming a film with a flow rate ratio of H ₂ (n is a positive integer) of 1/40 or less. Si _n H _{2n + 2} (n is a positive integer) contains silane SiH ₄ and / or higher order silane, and H ₂ contains hydrogen as a diluent and a dopant material such as phosphine, PH ₃ or diborane. It is composed of.
That is, the film forming gas for the first semiconductor layer is silane SiH.
₄ , high-order silane, phosphine, diborane, hydrogen, etc., containing at least silane SiH ₄ , high-order silane and hydrogen. Using a deposition gas having such a structure, the flow rate ratio of _{Si n H 2n + 2 / H} 2 (n is a positive integer) 1 /
By setting the film thickness to 40 or less, it is possible to form the first semiconductor layer that is dense and has excellent adhesiveness and has almost no defects such as holes. In particular, the first semiconductor layer is made of a metal film (14a, 16a) made of a different material.
Since it is deposited on a), it is possible to obtain a semiconductor layer with few defects by slowing the deposition rate.

After the p-type amorphous silicon film is deposited, the i-type amorphous silicon film and the n-type amorphous silicon film are sequentially deposited. Similar to the p-type amorphous silicon film, the i-type and / or n-type amorphous silicon film is formed by setting the flow rate ratio of Si _n H _{2n + 2} / H ₂ (n is a positive integer) to 1/40 or less. Alternatively, the film may be formed by setting the flow rate ratio to about 1/10 to 1/20. i
Since the n-type and n-type amorphous silicon films are respectively deposited on the semiconductor layers of the same type as that of the n-type and n-type amorphous silicon films, they are adhered to each other and defects are hardly generated.

After the photoelectric conversion layers (14b, 16b) composed of p-type, i-type, and n-type semiconductor layers are deposited, the photoelectric conversion layers (14b, 16b) are deposited thereon.
ITO or S by vacuum deposition method or sputtering method
A transparent conductive film (14c, 16c) such as nO ₂ is deposited.
The film thickness of the metal film and the transparent conductive film is preferably several hundreds to several thousand liters, but is appropriately determined in consideration of the characteristics of these films and the performance of the amorphous silicon film.

Next, the upper transparent conductive film (14c, 16c) and the amorphous silicon film (14b, 16b) consisting of three layers are patterned into a predetermined shape by a photolithography method or the like to form the upper electrodes 14c, 16c and the photoelectric layer. After forming the conversion layers 14b and 16b, the metal film (14
a) and 16a) are patterned into another predetermined shape to form the lower electrodes 14a and 16a, whereby the photodiode 14 and the blocking diode 16 are formed.

Next, on the photodiode 14 and the blocking diode 16, a thermal CVD method and an atmospheric pressure CV are applied.
D method, a plasma CVD method, after depositing the like SiO _x and SiN _x by a sputtering method to form the interlayer insulating film 18 by patterning into a predetermined shape by a photolithography method so. At this time, the contact holes 20, 2 are provided at predetermined positions on the photodiode 14, the blocking diode 16, and the lower electrode 14a.
4 and the extraction electrode 2 on the lower electrode 16a.
The interlayer insulating film 18 is removed from the region where 8 is formed.

Further, a metal such as Cr, Ni, Pd, Ti, Mo, Ta, and Al is deposited in a single layer or a multi-layer on them by a vacuum vapor deposition method, a sputtering method or the like, and then this is photolithographically or the like. By patterning into a predetermined shape, the connection wiring 22 and the channel wirings C _1, C
_{2, ...} C _n and the extraction electrode 28 are formed. This allows
The upper electrodes 14c, 16c are electrically connected to each other by the connection wiring 22, and the lower electrode 14a and the channel wirings C _1, C
_{2, ...} C _n are electrically connected. In addition,
These materials are not particularly limited as long as they can be electrically connected and are not particularly limited.

Finally, the plasma CVD method,
After depositing silicon oxide, silicon nitride, tantalum oxide, or the like by a sputtering method or the like, patterning the silicon oxide, silicon nitride, or tantalum oxide into a predetermined shape by a photolithography method, the extraction electrode 28 and the channel wirings C _1, C _{2, ...
A} protective film 26 is formed so as to cover the entire region except the _n extraction electrode (not shown). The protective film 26 is for protecting the photodiode 14, the blocking diode 16, the channel wirings C _1, C _{2, ...} C _n from humidity and scratches.

The reading device 10 thus obtained
The first semiconductor layers of the photoelectric conversion layers 14b and 16b deposited on the lower electrodes 14a and 16a on the substrate 12 are closely and firmly adhered to each other, and defects such as holes are almost generated. Since it does not exist, defects are hardly generated in the second and third semiconductor layers deposited thereon, and the occurrence of defects such as leak is significantly reduced. Therefore, the manufacturing yield of the reading device 10 is dramatically improved.

Although one embodiment of the reading device according to the present invention has been described in detail above, the present invention is not limited to the above-mentioned embodiment and can be implemented in other modes.

Further, in the above-described embodiment, the upper electrode 14c forming the photodiode 14 and the upper electrode 16c forming the blocking diode 16 are connected to each other by the connection wiring 2
2, the lower electrode 30 that constitutes the photodiode 14 and the lower electrode 30 that constitutes the blocking diode 16 are commonly used as shown in FIG. It may be a reading device 32 in which 14 and the blocking diode 16 are connected.

In this case, when the lower electrode 30 made of a metal is formed and then the first semiconductor layer of the photoelectric conversion layers 14b and 16b is deposited, the deposition conditions are Si _n H _{2n + 2} /
By forming the film with the flow rate ratio of H ₂ (n is a positive integer) set to 1/40 or less, the photoelectric conversion layers 14b and 16b adhere to the lower electrode 30 and almost no defects occur. Further, the upper electrode 14c of the photodiode 14 is taken out by the lead-out wiring 38 and is connected to the channel wirings C1 _, C
_{2, ...} C _n, and the upper electrode 16c of the blocking diode 16 may be taken out to the outside by the lead wiring 40. In this example, the photodiode 14 and the blocking diode 16 are connected to each other at their anode electrodes, and are connected in series with opposite polarities.

Further, in the above-mentioned embodiment, the anode electrode or the cathode electrode of the blocking diode 16 is commonly connected in the blocks B _1, B _{2, ...} B _m , and the anode electrode or the cathode electrode of the photodiode 14 is the channel. Blocks B _1, B _{2, ...} B by wires C _1, C _{2, ...} C _n
Although they are connected to each other at the same position between _m , the photodiode and the blocking diode are reversed, and the anode electrode or the cathode electrode of the photodiode is connected in common in the block, and the blocking diode is connected. The anode electrode or the cathode electrode may be connected to each other at a relatively same position between the blocks by channel wiring. That is, a plurality of optical sensor elements each including a photodiode (photoelectric conversion element) and a blocking diode (switching element) are one-dimensionally arrayed and divided into a plurality of blocks for every predetermined number. It suffices that one of them is commonly connected within the block, and the other is commonly connected by those located at the same relative position between the blocks by the channel wiring.

Further, in the above-mentioned embodiment, the lower electrodes 1 constituting the photodiode 14 and the blocking diode 16 are constituted for the reason of simplifying the manufacturing process.
4a and 16a, photoelectric conversion layers 14b and 16b, and upper electrodes 14c and 16c are deposited at the same time,
Although the upper electrodes 14c constituting the photodiodes 14 are made of the same material, they must be transparent, but the upper electrodes 16c constituting the blocking diode 16 need not be transparent.

Further, the above-mentioned photoelectric conversion layers 14b and 16b
All are laminated in the order of pin from the substrate 12 side, but conversely, they may be laminated in the order of nip to form a pin structure. In addition to the pin type described above, n
The i-type, pi-type, pn-type, MIS-type, heterojunction-type, homojunction-type, Schottky barrier-type, or a combination thereof may be deposited in a single layer or multiple layers. Furthermore, as the amorphous silicon constituting the semiconductor layer, hydrogenated amorphous silicon a-Si: H, hydrogenated amorphous silicon carbide a-SiC: H, amorphous silicon nitride, etc., and simple amorphous silicon a-Si etc. are preferable. However, these structures are not limited at all, for example, an amorphous silicon-based semiconductor made of an alloy of silicon and another element such as carbon, germanium, tin, or the like may be deposited.

Besides, the photoelectric conversion element may be, for example, a photoconductive type element instead of a photovoltaic type element such as a photodiode. Further, the present invention can be carried out in a mode in which various improvements, corrections, and modifications are made based on the knowledge of those skilled in the art, such as a TFT may be used as the switching element, without departing from the spirit of the invention.

Example 1 The substrate 12 was a non-alkali glass (# 7) manufactured by Corning Incorporated.
059), a 1000 Å thick chrome film was used for electron beam evaporation, and a reading device 42 having the structure shown in FIG. 1 was manufactured. First, a p-type amorphous silicon film having a thickness of 20 to 150 Å and 5000 to 9000 Å are formed on a chromium film (14a, 16a) by a separation type plasma CVD apparatus.
A thick i-type amorphous silicon film and a 150Å thick n-type amorphous silicon film were sequentially deposited. Then, an ITO film having a thickness of 600 Å was further deposited on the ITO film by the same method as the above-mentioned ITO film.

The amorphous silicon film is formed under the conditions that the film forming temperature is 250 ° C., the p-type amorphous silicon film has SiH ₄ of 5 sccm and B ₂ H ₆
Was diluted to 1000 ppm, H ₂ was 200 sccm, RF power was 45 W, and pressure was 1.5 Torr. For i-type amorphous silicon film, SiH ₄ was 200 sccm, RF power was 100 W, pressure was 0.5 Torr. For the n-type amorphous silicon film, SiH ₄ is 20 sccm, PH ₃
Was diluted to 1000 ppm, H ₂ was 200 sccm, RF power was 45 W, and pressure was 1.5 Torr. After the amorphous silicon film was formed, the appearance was inspected, and it was found that there were no pinholes and no abnormality.

Then, by photolithography,
The upper layer ITO film and the amorphous silicon film composed of three layers are patterned into a predetermined shape, and the upper electrodes 14c and 16c are formed.
And photoelectric conversion layers 14b and 16b were formed. Specifically, a resist solution was applied on the upper ITO film, prebaked, and then exposed using a mask in which a predetermined pattern was engraved. After development and post-baking, the upper ITO film was etched with a mixed solution of hydrochloric acid and nitric acid. Next, the amorphous silicon film was etched using a parallel plate type etching device. Here, after the chamber was evacuated to 10 ^-3 Torr or less, CF ₄ gas and O ₂ gas were introduced, and while maintaining the pressure at 5.0 Pa, a high frequency power supply of 13.56 MHz was used to apply 0.1 to the electrode. The amorphous silicon film was etched by supplying electric power of 0.7 W / cm ² .

Then, after removing the resist used for patterning, the chromium film was patterned into a predetermined shape by photolithography to form the lower electrodes 14a and 16a. Cerium ammonium nitrate was used for etching the chromium film. The photodiodes 14 and the blocking diodes 16 were formed in this manner. The number of each of them was 1728, and these were divided into 32 blocks of 56 blocks.

Next, a silicon oxide film having a thickness of 1.5 μm is deposited on the photodiode 14 and the blocking diode 16 by the plasma CVD method, and then patterned into a predetermined shape by the photolithography method to form the interlayer insulating film 18. Formed. A parallel plate type etching apparatus was used for the etching here. That is, after evacuating the inside of the chamber to 10 ^-2 Torr or less, the substrate 12 is heated and maintained at a predetermined temperature, silane gas of 20 to 60 sccm and nitrous oxide gas of 150 to 300 sccm are introduced, and 0.3 to 1.
The pressure was kept at 2 Torr. (Here, nitrogen gas may be introduced as needed.) After that, wait for the pressure to stabilize and use a high frequency power source of 13.56 MHz to apply 0.01 to 0 to the electrode facing the substrate 12. A power of 0.5 W / cm ² was supplied.

Further, two layers of Cr and Al are deposited on these by a sputtering method and patterned into a predetermined shape by a photolithography method, and the connection wiring 22 and the channel wirings C _1, C _{2, ...} C _{n are formed.} And the extraction electrode 28 were formed. Here, the film thickness of Cr was 500 Å and the film thickness of Al was 1.5 μm. Al etching was performed with a mixed solution of phosphoric acid, hydrochloric acid, nitric acid and acetic acid, and Cr etching was performed with ceric ammonium nitrate.

Finally, a 5000 Å thick silicon nitride film was deposited on the entire surface by plasma CVD, and then patterned into a predetermined shape by photolithography to form a protective film 26. A parallel plate type etching apparatus was also used for the etching here. That is, after evacuating the inside of the chamber to 10 ^-2 Torr or less, the substrate 12 is heated and maintained at a predetermined temperature, and silane gas of 20 to 60 sccm and ammonia gas of 150 to 300 sccm are introduced.
The pressure was kept at 1.2 Torr. (Here, hydrogen gas or nitrogen gas may be introduced if necessary.) After that,
After waiting for the pressure to stabilize, a high frequency power source of 13.56 MHz was used to apply 0.01 to 0.
A power of 5 W / cm ² was supplied.

As a result of checking the presence of defects such as leaks in the obtained reading device 10, the defect rate was 43%.

Example 2 A reader 1 having the structure shown in FIG.
0 was produced. However, conditions for forming the p-type amorphous silicon film is a film forming temperature set similarly at 250 ° C., the SiH ₄ 2 sccm, H ₂ diluted with B ₂ H ₆ to 1000 ppm to 20
Flow at 0 sccm, RF power 45W, pressure 1.5 Torr
It was formed into a film. The conditions for forming the i-type and n-type amorphous silicon films were set in the same manner as in Example 1.

After the amorphous silicon film was formed, the appearance of the film was inspected. As a result, no pinholes were found and no abnormality was found. Further, as a result of examining the presence or absence of defects such as leaks in the reading device 10 obtained in the same manner as in Example 1, the defect rate was 18%.

Comparative Example The reader 1 having the structure shown in FIG.
0 was produced. However, conditions for forming the p-type amorphous silicon film is a film forming temperature set similarly at 250 ° C., the SiH ₄ 20 sccm, H ₂ diluted with B ₂ H ₆ to 1000 ppm of 2
Flow at 00sccm, RF power 45W, pressure 1.5To
The film was formed at rr. The conditions for forming the i-type and n-type amorphous silicon films were set in the same manner as in Example 1.

After the amorphous silicon film was formed, the appearance was inspected. As a result, minute pinholes were observed at the interface between the substrate and the semiconductor layer. In addition, when the presence or absence of defects such as leaks was checked for the reading device 10 obtained in the same manner as in Example 1, the defect rate was 82%.

[0047]

According to the method of manufacturing a reading device of the present invention, the first semiconductor layer deposited and formed on at least the lower electrode of the photoelectric conversion layer formed by laminating at least two kinds of semiconductor layers. Is formed by setting the flow rate ratio of Si _n H _{2n + 2} / H ₂ (n is a positive integer) to 1/40 or less, the first semiconductor layer is densely formed on the lower electrode. Can be adhered to. Therefore, defects such as pinholes are hardly generated in the first semiconductor layer, and as a result, defects are hardly generated in the semiconductor layers subsequent to the second semiconductor layer deposited on the first semiconductor layer. Disappeared
The defect occurrence rate of the reader is greatly reduced.

[Brief description of drawings]

FIG. 1 is a schematic sectional view showing an embodiment of a document reading apparatus according to the present invention.

FIG. 2 is a schematic cross-sectional view showing another embodiment of the document reading apparatus according to the present invention.

FIG. 3 is a schematic sectional view showing an example of a conventional document reading apparatus.

FIG. 4 is a circuit diagram of the document reading apparatus shown in FIG.

[Explanation of symbols]

 10, 32; original reading device 12; substrate 14; photodiode (photoelectric conversion element) 16; blocking diode (switching element) 14a, 16a, 30; lower electrodes 14b, 16b; semiconductor layers 14c, 16c; upper electrode

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI technical display location H04N 1/028 Z 8721-5C

Claims (4)

[Claims] 1. A lower electrode deposited on at least a substrate, a photoelectric conversion layer in which at least two or more conductive semiconductors are stacked on the lower electrode, and a photoelectric conversion layer deposited on the photoelectric conversion layer. A method of manufacturing a reading device including a photoelectric conversion element including an upper electrode,
The first semiconductor layer _{Si n H 2n + 2 / H} 2 which is deposited on at least the lower electrode of the photoelectric conversion layer (n is a positive integer) flow ratio is deposited at 1/40 or less A method of manufacturing a reading device, comprising: 2. The method of manufacturing a reading device according to claim 1, wherein the H ₂ contains hydrogen as a diluent and a dopant material such as phosphine, PH ₃ or diborane. 3. The deposition gas for the first semiconductor layer is Si
The method for manufacturing a reading device according to claim 1, wherein at least SiH ₄ , high-order silane, and hydrogen are contained among H ₄ , high-order silane, phosphine, diborane, hydrogen, and the like. 4. The reading device according to claim 1, wherein the photoelectric conversion element comprises a photodiode and a blocking diode connected in series to the photodiode in reverse polarity. Manufacturing method.