JPH06254753A - Polishing method for cubic system boron nitride substrate - Google Patents

Polishing method for cubic system boron nitride substrate

Info

Publication number
JPH06254753A
JPH06254753A JP5066174A JP6617493A JPH06254753A JP H06254753 A JPH06254753 A JP H06254753A JP 5066174 A JP5066174 A JP 5066174A JP 6617493 A JP6617493 A JP 6617493A JP H06254753 A JPH06254753 A JP H06254753A
Authority
JP
Japan
Prior art keywords
polishing
boron nitride
nitride substrate
oxygen
cubic boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5066174A
Other languages
Japanese (ja)
Inventor
Tadashi Tomikawa
唯司 富川
Shinichi Shikada
真一 鹿田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIKYU KANKYO SANGYO GIJUTSU
CHIKYU KANKYO SANGYO GIJUTSU KENKYU KIKO
Sumitomo Electric Industries Ltd
Original Assignee
CHIKYU KANKYO SANGYO GIJUTSU
CHIKYU KANKYO SANGYO GIJUTSU KENKYU KIKO
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIKYU KANKYO SANGYO GIJUTSU, CHIKYU KANKYO SANGYO GIJUTSU KENKYU KIKO, Sumitomo Electric Industries Ltd filed Critical CHIKYU KANKYO SANGYO GIJUTSU
Priority to JP5066174A priority Critical patent/JPH06254753A/en
Publication of JPH06254753A publication Critical patent/JPH06254753A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Ceramic Products (AREA)

Abstract

PURPOSE:To provide a method wherein a cBN substrate used for a semiconductor substrate, etc., is polished with high smoothness. CONSTITUTION:A polishing material or a polishing disc is formed of an oxygen containing material (SiO2, Al2O3, ZrO2, CaO, CrO3, and MgO) to effect polishing. Probably, oxygen in the polishing material and the polishing disc is reacted with boron and nitrogen in cBN to produce B2O3 and NOx, which are removed, resulting in execution of mechanochemical polishing to produce a smooth polishing surface.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、半導体基板などに用い
られる立方晶窒化硼素（ｃＢＮ）基板の研磨方法に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for polishing a cubic boron nitride (cBN) substrate used as a semiconductor substrate or the like.

【０００２】[0002]

【従来の技術】従来のｃＢＮ基板の研磨方法としては、
昭和61年精密工学会春季大会学術講演会論文集，ｐ３７
３に記載されているように、レジンボンドダイヤモンド
砥石によるものや、特開平1-274957号公報記載のよう
に、Ｃｒを含む金属製研磨盤を用いるものが提案されて
いる。2. Description of the Related Art As a conventional method for polishing a cBN substrate,
1986 Proceedings of the Japan Society for Precision Engineering, Spring Conference, Proceedings, p37
As described in JP-A No. 1-274957, a method using a resin-bonded diamond grindstone as described in JP-A No. 1-274957 and a method using a metal polishing machine containing Cr are proposed.

【０００３】[0003]

【発明が解決しようとする課題】しかし、ダイヤモンド
砥石を用いたものは、機械的効果のみに基づく研磨方法
で、研磨面に高い平滑性を得ることは難しい。一方、Ｃ
ｒを含む金属製研磨板を用いたものは、機械的効果に加
えて化学的効果を併せ持ったいわゆるメカノケミカル研
磨で、ダイヤモンド砥石による場合よりは改善されてい
る。しかし、それでも研磨された基板の表面粗さはＲma
x で２０ｎｍ程度で、例えば、半導体基板として用いる
には表面粗さが大きすぎるといった問題があった。However, the method using a diamond grindstone is a polishing method based only on mechanical effects, and it is difficult to obtain high smoothness on the polished surface. On the other hand, C
The one using a metal polishing plate containing r is so-called mechanochemical polishing which has a chemical effect in addition to a mechanical effect, and is improved as compared with the case of using a diamond grindstone. However, the surface roughness of the polished substrate is still Rma
When x is about 20 nm, there is a problem that the surface roughness is too large for use as a semiconductor substrate, for example.

【０００４】[0004]

【課題を解決するための手段】本発明は、このような課
題を解決するためになされたものであって、その特徴
は、研磨材及び／又は研磨盤を酸素含有材料をとしたこ
とにある。ここで、酸素含有材料は、例えば、ＳｉＯ
2 ，Ａｌ2 Ｏ3 ，ＺｒＯ2 ，ＣａＯ，ＣｒＯ3 ，ＭｇＯ
等が挙げられる。又、上記研磨において、ダイヤモンド
砥粒又は立方晶窒化硼素砥粒を研磨材として加えること
が好ましい。The present invention has been made to solve the above problems, and is characterized in that an abrasive and / or a polishing disk is made of an oxygen-containing material. . Here, the oxygen-containing material is, for example, SiO.
2 , Al 2 O 3 , ZrO 2 , CaO, CrO 3 , MgO
Etc. Further, in the above polishing, it is preferable to add diamond abrasive grains or cubic boron nitride abrasive grains as an abrasive.

【０００５】[0005]

【作用】このように、酸素含有材料を用いて研磨すれば
高い平滑性を得られることが後に述べる種々の試験から
明らかになったが、実際の研磨における反応は定かでは
ない。おそらく、研磨材，研磨盤中の酸素がｃＢＮ中の
硼素や窒素と反応し、Ｂ2 Ｏ3 やＮＯx となって除去さ
れることでメカノケミカルな研磨が進行して平滑な研磨
面が得られるものと考えられる。As described above, various tests to be described later revealed that high smoothness can be obtained by polishing with an oxygen-containing material, but the reaction in actual polishing is unclear. Probably, oxygen in the polishing material and polishing plate reacts with boron and nitrogen in cBN to be removed as B 2 O 3 and NO x, and mechanochemical polishing progresses to obtain a smooth polished surface. It is thought to be done.

【０００６】[0006]

【実施例】以下、実施例に基づいて本発明を説明する。
実際に、本発明方法によりｃＢＮ基板の研磨を行った。
試験方法は表１記載の研磨盤を空気静圧軸受けに取り付
け、実施例によっては同表中の研磨材を使用して研磨を
行った。又、比較例として、Ｃｒ含有ＳＫ−５及びダイ
ヤモンド砥石の研磨盤で、研磨材を用いずに研磨を行っ
た。そして、得られた基板の表面粗さを測定した。EXAMPLES The present invention will be described below based on examples.
Actually, the cBN substrate was polished by the method of the present invention.
As the test method, the polishing disk shown in Table 1 was attached to an aerostatic bearing, and in some examples, polishing was performed using the abrasives shown in the table. In addition, as a comparative example, polishing was performed without using an abrasive material on a polishing machine of Cr-containing SK-5 and diamond grindstone. Then, the surface roughness of the obtained substrate was measured.

【０００７】尚、表１中の研磨盤をより詳しく説明する
と、「石英」は表面に石英板（ＳｉＯ2 ）を貼付したＡ
ｌ盤、「ＳＫ−５」はＣｒ含有炭素工具鋼ＳＫ−５，Ｈ
RC５５、「ダイヤモンド砥石」はレジンボンドダイヤモ
ンド砥石（＃6000）である。又、同表中の研磨材は、Ｓ
ｉＯ2 （＃10000 ），Ａｌ2 Ｏ3 （＃10000 ），ＺｒＯ
2 （＃2000），ＣａＯ（＃2000），ＣｒＯ3 （＃200
0），ＭｇＯ（＃2000）である。試験結果も併せて表１
に示す。[0007] Explaining the polishing plate in Table 1 in more detail, "quartz" means that a quartz plate (SiO 2 ) is attached to the surface A.
l-board, "SK-5" is a Cr-containing carbon tool steel SK-5, H
RC 55, "Diamond grindstone" is a resin bond diamond grindstone (# 6000). Further, the polishing materials in the table are S
iO 2 (# 10000), Al 2 O 3 (# 10000), ZrO
2 (# 2000), CaO (# 2000), CrO 3 (# 200
0) and MgO (# 2000). The test results are also shown in Table 1.
Shown in.

【０００８】[0008]

【表１】 [Table 1]

【０００９】表１からわかるように、酸素を含有する材
料を研磨盤又は研磨材として用いた本発明実施例は、い
ずれも表面粗さがＲmax で１０ｎｍ以下で、極めて高い
平滑性を実現できることが確認された。一方、比較例は
いずれも表面粗さが２０ｎｍ以上で半導体基板などに用
いるには不十分な結果となった。As can be seen from Table 1, in any of the examples of the present invention in which a material containing oxygen is used as a polishing plate or an abrasive, the surface roughness Rmax is 10 nm or less, and extremely high smoothness can be realized. confirmed. On the other hand, in each of the comparative examples, the surface roughness was 20 nm or more, which was insufficient for use in a semiconductor substrate or the like.

【００１０】[0010]

【発明の効果】以上説明したように、本発明方法によれ
ば、研磨において酸素を含有した材料を用いることで、
表面粗さがＲmax で１０ｎｍ以下のｃＢＮ基板を得るこ
とができる。特に、研磨材又は研磨盤を酸素含有材料と
し、併せてダイヤモンド砥粒又は立方晶窒化硼素砥粒の
研磨材を用いれば、一層効率的な研磨が可能になる。従
って、半導体製造などの分野で効果的な利用が期待でき
る。As described above, according to the method of the present invention, by using a material containing oxygen in polishing,
A cBN substrate having a surface roughness Rmax of 10 nm or less can be obtained. In particular, if an abrasive material or a polishing plate is made of an oxygen-containing material and an abrasive material of diamond abrasive grains or cubic boron nitride abrasive grains is also used, more efficient polishing becomes possible. Therefore, effective use can be expected in fields such as semiconductor manufacturing.

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 酸素含有材料を研磨材として用いること
を特徴とする立方晶窒化硼素基板の研磨方法。1. A method for polishing a cubic boron nitride substrate, which comprises using an oxygen-containing material as an abrasive. 【請求項２】 酸素含有材料を研磨盤として用いること
を特徴とする立方晶窒化硼素基板の研磨方法。2. A method for polishing a cubic boron nitride substrate, which comprises using an oxygen-containing material as a polishing plate. 【請求項３】 酸素含有材料がＳｉＯ2 ，Ａｌ2 Ｏ3 ，
ＺｒＯ2 ，ＣａＯ，ＣｒＯ3 又はＭｇＯであることを特
徴とする請求項１又は２記載の立方晶窒化硼素基板の研
磨方法。3. The oxygen-containing material is SiO 2 , Al 2 O 3 ,
The method for polishing a cubic boron nitride substrate according to claim 1 or 2, which is ZrO 2 , CaO, CrO 3 or MgO. 【請求項４】 研磨において、ダイヤモンド砥粒又は立
方晶窒化硼素砥粒を研磨材として加えることを特徴とす
る請求項１、２又は３記載の立方晶窒化硼素基板の研磨
方法。4. The method for polishing a cubic boron nitride substrate according to claim 1, wherein diamond abrasive grains or cubic boron nitride abrasive grains are added as an abrasive during polishing.
JP5066174A 1993-03-01 1993-03-01 Polishing method for cubic system boron nitride substrate Pending JPH06254753A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5066174A JPH06254753A (en) 1993-03-01 1993-03-01 Polishing method for cubic system boron nitride substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5066174A JPH06254753A (en) 1993-03-01 1993-03-01 Polishing method for cubic system boron nitride substrate

Publications (1)

Publication Number Publication Date
JPH06254753A true JPH06254753A (en) 1994-09-13

Family

ID=13308221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5066174A Pending JPH06254753A (en) 1993-03-01 1993-03-01 Polishing method for cubic system boron nitride substrate

Country Status (1)

Country Link
JP (1) JPH06254753A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013052488A (en) * 2011-09-06 2013-03-21 Sumitomo Electric Ind Ltd Polishing machine for polishing diamond material and method of polishing diamond material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013052488A (en) * 2011-09-06 2013-03-21 Sumitomo Electric Ind Ltd Polishing machine for polishing diamond material and method of polishing diamond material

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