JPH0625100A - Antiferroelectric liquid crystal compound - Google Patents
Antiferroelectric liquid crystal compoundInfo
- Publication number
- JPH0625100A JPH0625100A JP4185367A JP18536792A JPH0625100A JP H0625100 A JPH0625100 A JP H0625100A JP 4185367 A JP4185367 A JP 4185367A JP 18536792 A JP18536792 A JP 18536792A JP H0625100 A JPH0625100 A JP H0625100A
- Authority
- JP
- Japan
- Prior art keywords
- fluoro
- liquid crystal
- compound
- trifluoromethyl
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 34
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 16
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims description 7
- 230000005620 antiferroelectricity Effects 0.000 abstract description 5
- UKVIEHSSVKSQBA-UHFFFAOYSA-N methane;palladium Chemical compound C.[Pd] UKVIEHSSVKSQBA-UHFFFAOYSA-N 0.000 abstract description 4
- 239000003054 catalyst Substances 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- -1 fluorooxybiphenyl-4-carboxylic acid oxycarbonylfluorophenyl ester Chemical class 0.000 abstract description 3
- BDJHNOYPBXMTQQ-ZCFIWIBFSA-N (2r)-1,1,1-trifluoro-6-methoxyhexan-2-ol Chemical compound COCCCC[C@@H](O)C(F)(F)F BDJHNOYPBXMTQQ-ZCFIWIBFSA-N 0.000 abstract description 2
- HWQRXVRKZFDKLJ-UHFFFAOYSA-N 2-fluoro-4-phenylmethoxybenzoic acid Chemical compound C1=C(F)C(C(=O)O)=CC=C1OCC1=CC=CC=C1 HWQRXVRKZFDKLJ-UHFFFAOYSA-N 0.000 abstract description 2
- 150000002148 esters Chemical class 0.000 abstract description 2
- 230000005494 condensation Effects 0.000 abstract 2
- 238000009833 condensation Methods 0.000 abstract 2
- ONAKONBENVUWFD-UHFFFAOYSA-N 4-(3-fluoro-4-undecoxyphenyl)benzoic acid Chemical compound C1=C(F)C(OCCCCCCCCCCC)=CC=C1C1=CC=C(C(O)=O)C=C1 ONAKONBENVUWFD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 15
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 15
- 239000012071 phase Substances 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 10
- 230000007704 transition Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000004990 Smectic liquid crystal Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QOSSAOTZNIDXMA-UHFFFAOYSA-N Dicylcohexylcarbodiimide Chemical compound C1CCCCC1N=C=NC1CCCCC1 QOSSAOTZNIDXMA-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010898 silica gel chromatography Methods 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RFMLNHNMMPFKHS-GFCCVEGCSA-N [(2R)-1,1,1-trifluoro-6-methoxyhexan-2-yl] 2-fluoro-4-hydroxybenzoate Chemical compound FC([C@@H](CCCCOC)OC(C1=C(C=C(C=C1)O)F)=O)(F)F RFMLNHNMMPFKHS-GFCCVEGCSA-N 0.000 description 2
- XBABNQPIOLIYNC-LJQANCHMSA-N [(2r)-1,1,1-trifluoro-6-methoxyhexan-2-yl] 2-fluoro-4-phenylmethoxybenzoate Chemical compound C1=C(F)C(C(=O)O[C@H](CCCCOC)C(F)(F)F)=CC=C1OCC1=CC=CC=C1 XBABNQPIOLIYNC-LJQANCHMSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000006264 debenzylation reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- PSHKMPUSSFXUIA-UHFFFAOYSA-N n,n-dimethylpyridin-2-amine Chemical compound CN(C)C1=CC=CC=N1 PSHKMPUSSFXUIA-UHFFFAOYSA-N 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
Landscapes
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Liquid Crystal Substances (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、新規な反強誘電性液晶
化合物に関する。本発明の反強誘電性液晶化合物は、高
速応答性に優れた3つの安定な分子配列状態を有するカ
イラルスメクチックCA 相を示す反強誘電性液晶材料と
して有用である。FIELD OF THE INVENTION The present invention relates to a novel antiferroelectric liquid crystal compound. INDUSTRIAL APPLICABILITY The antiferroelectric liquid crystal compound of the present invention is useful as an antiferroelectric liquid crystal material exhibiting a chiral smectic C A phase having three stable molecular alignment states with excellent fast response.
【0002】[0002]
【従来の技術】現在、液晶化合物を用いた表示素子は、
その低電圧駆動性、低電力消費性及び小型、薄型化の観
点から、広く利用されている。反強誘電性液晶は、強誘
電性液晶が示す2つの安定状態に加え、電界無印加時に
第3の安定状態を示す。また、メモリー性を有し、配向
欠陥が少なく、電界印加による欠陥の修復が可能である
等の優れた特性を有している。2. Description of the Related Art Currently, display devices using liquid crystal compounds are
It is widely used from the viewpoints of its low voltage drivability, low power consumption, small size and thinness. The antiferroelectric liquid crystal exhibits the third stable state when no electric field is applied, in addition to the two stable states shown by the ferroelectric liquid crystal. Further, it has excellent properties such as having a memory property, few alignment defects, and being able to repair defects by applying an electric field.
【0003】このような反強誘電性液晶化合物はいくつ
か知られているが、単独で、昇温過程において、室温を
含む領域で反強誘電性を示す例は極めて少ない(特開平
2−131450号公報)。従って、現在では、配合に
よって室温以下の領域まで反強誘電性発現温度を低下さ
せる方法が検討されてきた(特開平1−213390号
公報)。Although some of such antiferroelectric liquid crystal compounds are known, there are very few examples which show antiferroelectricity in a region including room temperature in the temperature rising process alone (Japanese Patent Laid-Open No. 131450/1990). Issue). Therefore, at present, a method of decreasing the antiferroelectric property expression temperature to a region of room temperature or lower by compounding has been investigated (Japanese Patent Laid-Open No. 1-213390).
【0004】[0004]
【発明が解決しようとする課題】本発明は、従来知られ
ている反強誘電性液晶材料とは分子構造を異にし、従来
の化合物に比べ、単独で、室温を含む広い温度領域で反
強誘電性を示す液晶材料を提供するものである。The present invention has a molecular structure different from that of the conventionally known antiferroelectric liquid crystal material, and compared with the conventional compound, the antiferroelectric liquid crystal material alone has an antiferroelectric property in a wide temperature range including room temperature. A liquid crystal material having a dielectric property is provided.
【0005】[0005]
【課題を解決するための手段】本発明は、一般式〔I〕
で示される反強誘電性液晶化合物、および、一般式
〔I〕で示される反強誘電性液晶化合物を用いた表示素
子である。The present invention has the general formula [I]
And a display device using the antiferroelectric liquid crystal compound represented by the formula (1) and the antiferroelectric liquid crystal compound represented by the general formula (I).
【0006】[0006]
【化2】 [Chemical 2]
【0007】(式中、Rは炭素数10または11のアル
キル基である) 上記一般式〔I〕において、Rは炭素数10または11
のアルキル基、即ち、デシル基またはウンデシル基であ
り、これらは直鎖状でも、分岐鎖を有していてもよい。(Wherein R is an alkyl group having 10 or 11 carbon atoms) In the above general formula [I], R is 10 or 11 carbon atoms.
Is an alkyl group, that is, a decyl group or an undecyl group, which may be linear or branched.
【0008】本発明の一般式〔I〕で示される化合物と
しては、以下の化合物が挙げられる。 No. 1:(R)−3’−フルオロ−4’−デシルオキシ
ビフェニル−4−カルボン酸−3−フルオロ−4−(1
−トリフルオロメチル−5−メトキシペンチルオキシカ
ルボニル)フェニルエステル No. 2:(R)−3’−フルオロ−4’−ウンデシルオ
キシビフェニル−4−カルボン酸−3−フルオロ−4−
(1−トリフルオロメチル−5−メトキシペンチルオキ
シカルボニル)フェニルエステルExamples of the compound represented by the general formula [I] of the present invention include the following compounds. No. 1: (R) -3′-fluoro-4′-decyloxybiphenyl-4-carboxylic acid-3-fluoro-4- (1
-Trifluoromethyl-5-methoxypentyloxycarbonyl) phenyl ester No. 2: (R) -3'-fluoro-4'-undecyloxybiphenyl-4-carboxylic acid-3-fluoro-4-
(1-Trifluoromethyl-5-methoxypentyloxycarbonyl) phenyl ester
【0009】(製造方法)本発明の一般式〔I〕で示さ
れる化合物は、以下の反応式に示す方法により製造する
ことができる。以下、反応式で例示するが、式中、R
は、一般式〔I〕で規定したものと同一であり、式中の
〔 〕の番号は、上段の化合物を表す。(Production Method) The compound represented by the general formula [I] of the present invention can be produced by the method shown in the following reaction scheme. Hereinafter, the reaction formula will be exemplified. In the formula, R
Are the same as those defined in the general formula [I], and the number of [] in the formula represents the upper compound.
【0010】[0010]
【化3】 [Chemical 3]
【0011】反応工程(1)は、脱水縮合剤としてジシ
クロヘキシルカルボジイミド等を用い、触媒としてN,
N−ジメチル−4−アミノピリジン等の有機塩基を用
い、塩化メチレン、クロロホルム等の溶媒中で反応させ
ることによって容易に実施できる。反応工程(2)は、
脱ベンジル化工程であるが、触媒としてパラジウム炭素
等を用い、溶媒としてエタノール、酢酸等を用い、常圧
水添するなどの公知の方法により実施することができ
る。反応工程(3)は、反応工程(1)と全く同様に実
施でき、容易に本発明の目的化合物である一般式〔I〕
の化合物に導くことができる。In the reaction step (1), dicyclohexylcarbodiimide or the like is used as the dehydration condensing agent, and N,
It can be easily carried out by reacting in an organic base such as N-dimethyl-4-aminopyridine or the like in a solvent such as methylene chloride or chloroform. The reaction step (2) is
The debenzylation step can be carried out by a known method such as palladium carbon or the like as a catalyst, ethanol, acetic acid or the like as a solvent, and hydrogenation at atmospheric pressure. The reaction step (3) can be carried out in exactly the same manner as the reaction step (1), and is easily carried out by the general formula [I] which is the object compound of the present invention.
Can be led to the compound of
【0012】(素子の製造)本発明の液晶化合物を用い
た素子を作製する際には、従来の強誘電性液晶を用いる
素子の作製技術が応用できる。即ち、透明電極が設けら
れ、表面が配向処理された2枚の透明基板をスペーサー
を挟んで貼り合わせたものに、液晶化合物を注入するこ
とにより得られる。配向膜の材料としては、ポリビニル
アルコール、ポリイミド、SiO、SiO2 などを用い
ることができる。また、スペーサーとしては、シリカビ
ーズ、アルミナビーズ、ガラスファイバー、ポリマーフ
ィルムなどを用いることができる。(Manufacture of Device) When manufacturing a device using the liquid crystal compound of the present invention, a conventional device manufacturing technique using a ferroelectric liquid crystal can be applied. That is, it can be obtained by injecting a liquid crystal compound into a structure in which two transparent substrates each having a transparent electrode and having a surface subjected to an alignment treatment are bonded together with a spacer interposed therebetween. As the material of the alignment film, polyvinyl alcohol, polyimide, SiO, SiO 2 or the like can be used. Further, as the spacer, silica beads, alumina beads, glass fibers, polymer films, etc. can be used.
【0013】[0013]
【発明の効果】本発明の光学活性化合物は、従来知られ
ている反強誘電性液晶材料とは分子構造を異にし、従来
の化合物に比べ、単独で室温を含む広い温度領域で反強
誘電性を示すものである。INDUSTRIAL APPLICABILITY The optically active compound of the present invention has a molecular structure different from that of a conventionally known antiferroelectric liquid crystal material, and, compared with the conventional compound, it has an antiferroelectric property in a wide temperature range including room temperature alone. It shows sex.
【0014】[0014]
【実施例】以下、実施例により、本発明をさらに具体的
に説明する。なお、実施例中の相転移温度の測定、およ
び相の同定は、DSC、および、実施例1で製造する素
子の電場応答を偏光顕微鏡で観察することによって実施
した。また,相転移温度(℃)の表示に用いた略号;C
ryは結晶相を、SmCA *はカイラルスメクチックC
A 相を、SmC* はカイラルスメクチックC相を、Sm
AはスメクチックA相を、Isoは等方性液体相を表
す。また、上段の値は5℃/minで昇温したとき、下
段の値は5℃/minで降温したときの相転移温度を表
す。EXAMPLES The present invention will be described in more detail below with reference to examples. In addition, the measurement of the phase transition temperature and the identification of the phase in the examples were performed by observing the electric field response of DSC and the device manufactured in Example 1 with a polarizing microscope. The abbreviation used to indicate the phase transition temperature (° C); C
ry is the crystalline phase, SmC A * is the chiral smectic C
A phase, SmC * is chiral smectic C phase, Sm
A represents a smectic A phase, and Iso represents an isotropic liquid phase. Further, the upper value represents the phase transition temperature when the temperature was raised at 5 ° C./min, and the lower value represents the phase transition temperature when the temperature was lowered at 5 ° C./min.
【0015】(実施例1) (R)−3’−フルオロ−4’−ウンデシルオキシビフ
ェニル−4−カルボン酸−3−フルオロ−4−(1−ト
リフルオロメチル−5−メトキシペンチルオキシカルボ
ニル)フェニルエステル(化合物No.2) (1)(R)−2−フルオロ−4−ベンジルオキシ安息
香酸−1−トリフルオロメチル−5−メトキシペンチル
エステルの製造 2−フルオロ−4−ベンジルオキシ安息香酸1.50g
(6.10mmol)、(R)−1−トリフルオロメチ
ル−5−メトキシペンタノール0.95g(5.01m
mol)、および、N,N−ジメチルアミノピリジン
0.37g(3.10mmol)に、塩化メチレン20
mlを加え、室温にて攪拌した後、ジシクロヘキシルカ
ルボジイミド1.58g(7.65mmol)を加え、
室温にて2時間反応させた。(Example 1) (R) -3'-fluoro-4'-undecyloxybiphenyl-4-carboxylic acid-3-fluoro-4- (1-trifluoromethyl-5-methoxypentyloxycarbonyl) Phenyl Ester (Compound No. 2) (1) (R) -2-Fluoro-4-benzyloxybenzoic Acid-1-Trifluoromethyl-5-methoxypentyl Ester Preparation 2-Fluoro-4-benzyloxybenzoic Acid 1 .50 g
(6.10 mmol), 0.95 g (5.01 m) of (R) -1-trifluoromethyl-5-methoxypentanol
mol) and 0.37 g (3.10 mmol) of N, N-dimethylaminopyridine and 20 methylene chloride.
After adding ml and stirring at room temperature, 1.58 g (7.65 mmol) of dicyclohexylcarbodiimide was added,
The reaction was carried out at room temperature for 2 hours.
【0016】反応終了後、析出した固形物を濾別し、水
洗、5%酢酸水溶液による洗浄、水洗を経た後、無水硫
酸マグネシウムで乾燥させた。乾燥剤を濾別し、塩化メ
チレンを留去し、粗目的物を得た。このものを、シリカ
ゲルカラムクロマトグラフィーにより精製することによ
り、目的の(R)−2−フルオロ−4−ベンジルオキシ
安息香酸−1−トリフルオロメチル−5−メトキシペン
チルエステル1.71g(4.12mmol)を得た。After completion of the reaction, the precipitated solid matter was filtered off, washed with water, washed with a 5% acetic acid aqueous solution, washed with water, and then dried over anhydrous magnesium sulfate. The desiccant was filtered off and methylene chloride was distilled off to obtain a crude target product. By purifying this by silica gel column chromatography, 1.71 g (4.12 mmol) of the target (R) -2-fluoro-4-benzyloxybenzoic acid-1-trifluoromethyl-5-methoxypentyl ester was obtained. Got
【0017】(2)(R)−2−フルオロ−4−ヒドロ
キシ安息香酸−1−トリフルオロメチル−5−メトキシ
ペンチルエステルの製造 上記(1)で得られた(R)−2−フルオロ−4−ベン
ジルオキシ安息香酸−1−トリフルオロメチル−5−メ
トキシペンチルエステル1.60g(3.90mmo
l)を、酢酸10mlに溶解した後、水素雰囲気下、5
%パラジウム炭素0.39gを用い、室温にて5時間反
応させた。反応終了後、パラジウム炭素を濾別し、酢酸
を留去し、粗目的物を得た。このものを、シリカゲルカ
ラムクロマトグラフィーにより精製することにより、目
的の(R)−2−フルオロ−4−ヒドロキシ安息香酸−
1−トリフルオロメチル−5−メトキシペンチルエステ
ル1.23g(3.79mmol)を得た。(2) Production of (R) -2-fluoro-4-hydroxybenzoic acid-1-trifluoromethyl-5-methoxypentyl ester (R) -2-fluoro-4 obtained in the above (1). -Benzyloxybenzoic acid-1-trifluoromethyl-5-methoxypentyl ester 1.60 g (3.90 mmo
l) was dissolved in 10 ml of acetic acid, then, under a hydrogen atmosphere, 5
% Palladium carbon 0.39 g was used to react at room temperature for 5 hours. After completion of the reaction, palladium carbon was filtered off and acetic acid was distilled off to obtain a crude target product. By purifying this by silica gel column chromatography, the desired (R) -2-fluoro-4-hydroxybenzoic acid-
1.23 g (3.79 mmol) of 1-trifluoromethyl-5-methoxypentyl ester was obtained.
【0018】(3)目的化合物(化合物No. 2)の製造 上記(2)で得られた(R)−2−フルオロ−4−ヒド
ロキシ安息香酸−1−トリフルオロメチル−5−メトキ
シペンチルエステル97mg(0.30mmol)、
3’−フルオロ−4’−ウンデシルオキシビフェニル−
4−カルボン酸140mg(0.36mmol)、およ
び、N,N−ジメチル−4−アミノピリジン22mg
(0.18mmol)に、塩化メチレン10mlを加
え、室温にて攪拌した後、ジシクロヘキシルカルボジイ
ミド93mg(0.45mmol)を加え、室温にて2
時間反応させた。(3) Production of target compound (Compound No. 2) 97 mg of (R) -2-fluoro-4-hydroxybenzoic acid-1-trifluoromethyl-5-methoxypentyl ester obtained in the above (2) (0.30 mmol),
3'-fluoro-4'-undecyloxybiphenyl-
140 mg (0.36 mmol) of 4-carboxylic acid and 22 mg of N, N-dimethyl-4-aminopyridine
10 ml of methylene chloride was added to (0.18 mmol), and the mixture was stirred at room temperature, then 93 mg (0.45 mmol) of dicyclohexylcarbodiimide was added, and 2
Reacted for hours.
【0019】反応終了後、析出した固形物を濾別し、水
洗、5%酢酸水溶液による洗浄、水洗を経た後、無水硫
酸マグネシウムで乾燥させた。乾燥剤を濾別し、塩化メ
チレンを留去し、粗目的物を得た。このものを、シリカ
ゲルカラムクロマトグラフィーにより精製することによ
り、目的の(R)−3’−フルオロ−4’−ウンデシル
オキシビフェニル−4−カルボン酸−3−フルオロ−4
−(1−トリフルオロメチル−5−メトキシペンチルオ
キシカルボニル)フェニルエステル190mg(0.2
7mmol)を得た。After the completion of the reaction, the precipitated solid matter was separated by filtration, washed with water, washed with a 5% acetic acid aqueous solution, washed with water, and then dried over anhydrous magnesium sulfate. The desiccant was filtered off and methylene chloride was distilled off to obtain a crude target product. This product was purified by silica gel column chromatography to give the desired (R) -3'-fluoro-4'-undecyloxybiphenyl-4-carboxylic acid-3-fluoro-4.
-(1-Trifluoromethyl-5-methoxypentyloxycarbonyl) phenyl ester 190 mg (0.2
7 mmol) was obtained.
【0020】1H−NMRスペクトル(ppm) 0.89(t,3H), 1.14−1.53(m,20H), 1.80−1.95(m,2H),
3.30(s,3H),3.38(t,2H), 4.08(t,2H), 5.50−5.61(m,1
H), 7.06(t,1H), 7.16(d,2H),7.40(t,2H), 7.70(d,2H),
8.06(t,1H), 8.25(d,2H) IRスペクトル(cm-1) 2860, 2800, 1780, 1770, 1640, 1540, 1436, 1300, 11
50, 1080, 900, 790,720 相転移温度(℃) 1 H-NMR spectrum (ppm) 0.89 (t, 3H), 1.14-1.53 (m, 20H), 1.80-1.95 (m, 2H),
3.30 (s, 3H), 3.38 (t, 2H), 4.08 (t, 2H), 5.50−5.61 (m, 1
H), 7.06 (t, 1H), 7.16 (d, 2H), 7.40 (t, 2H), 7.70 (d, 2H),
8.06 (t, 1H), 8.25 (d, 2H) IR spectrum (cm -1 ) 2860, 2800, 1780, 1770, 1640, 1540, 1436, 1300, 11
50, 1080, 900, 790, 720 Phase transition temperature (℃)
【0021】[0021]
【化4】 [Chemical 4]
【0022】(実施例2) (R)−3’−フルオロ−4’−デシルオキシビフェニ
ル−4−カルボン酸−3−フルオロ−4−(1−トリフ
ルオロメチル−5−メトキシペンチルオキシカルボニ
ル)フェニルエステル(化合物No.1) 実施例1と全く同様にして目的物を合成し、相転移温度
を測定した。その結果を以下に示した。(Example 2) (R) -3'-fluoro-4'-decyloxybiphenyl-4-carboxylic acid-3-fluoro-4- (1-trifluoromethyl-5-methoxypentyloxycarbonyl) phenyl Ester (Compound No. 1) The target compound was synthesized in exactly the same manner as in Example 1 and the phase transition temperature was measured. The results are shown below.
【0023】相転移温度(℃)Phase transition temperature (° C.)
【0024】[0024]
【化5】 [Chemical 5]
【0025】(比較例1) (R)−3’−フルオロ−4’−ドデシルオキシビフェ
ニル−4−カルボン酸−3−フルオロ−4−(1−トリ
フルオロメチル−5−メトキシペンチルオキシカルボニ
ル)フェニルエステル 実施例1と全く同様にして、目的物を合成し、相転移温
度を測定した。その結果を以下に示した。Comparative Example 1 (R) -3'-fluoro-4'-dodecyloxybiphenyl-4-carboxylic acid-3-fluoro-4- (1-trifluoromethyl-5-methoxypentyloxycarbonyl) phenyl Ester The target compound was synthesized and the phase transition temperature was measured in exactly the same manner as in Example 1. The results are shown below.
【0026】[0026]
【化6】 [Chemical 6]
【0027】この化合物は、実施例の化合物に比べ、反
強誘電性を示す下限温度が高かった。This compound had a higher minimum temperature at which it exhibits antiferroelectricity, as compared with the compounds of Examples.
【0028】(比較例2、3)実施例1と同様にして、
下記一般式〔VI〕におけるRが表1に示される化合物
を合成し、それぞれの化合物の相転移前駆現象を測定し
た。これらの結果を表1に示した。これらの化合物で
は、いずれも実施例の化合物に比べ、反強誘電性を示す
下限温度が高かった。(Comparative Examples 2 and 3) In the same manner as in Example 1,
The compounds in which R in the following general formula [VI] is shown in Table 1 were synthesized, and the phase transition precursor phenomenon of each compound was measured. The results are shown in Table 1. In each of these compounds, the lower limit temperature exhibiting antiferroelectricity was higher than that of the compound of the example.
【0029】[0029]
【化7】 [Chemical 7]
【0030】[0030]
【表1】 [Table 1]
Claims (1)
化合物。 【化1】 (式中、Rは炭素数10または11のアルキル基であ
る)1. An antiferroelectric liquid crystal compound represented by the general formula [I]. [Chemical 1] (In the formula, R is an alkyl group having 10 or 11 carbon atoms)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4185367A JPH0625100A (en) | 1992-07-13 | 1992-07-13 | Antiferroelectric liquid crystal compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4185367A JPH0625100A (en) | 1992-07-13 | 1992-07-13 | Antiferroelectric liquid crystal compound |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0625100A true JPH0625100A (en) | 1994-02-01 |
Family
ID=16169565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4185367A Pending JPH0625100A (en) | 1992-07-13 | 1992-07-13 | Antiferroelectric liquid crystal compound |
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JP (1) | JPH0625100A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6267910B1 (en) | 1994-04-18 | 2001-07-31 | Nippon Soken, Inc. | Antiferroelectric liquid crystal composition |
US8239147B2 (en) * | 2006-08-24 | 2012-08-07 | Advantest Corporation | Test apparatus and manufacturing method |
KR101323830B1 (en) * | 2011-03-16 | 2013-10-31 | 삼성중공업 주식회사 | Thruster for a ship and ship having the same |
-
1992
- 1992-07-13 JP JP4185367A patent/JPH0625100A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6267910B1 (en) | 1994-04-18 | 2001-07-31 | Nippon Soken, Inc. | Antiferroelectric liquid crystal composition |
US8239147B2 (en) * | 2006-08-24 | 2012-08-07 | Advantest Corporation | Test apparatus and manufacturing method |
KR101323830B1 (en) * | 2011-03-16 | 2013-10-31 | 삼성중공업 주식회사 | Thruster for a ship and ship having the same |
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