JPH06244458A - Blue-color-light emitting diode - Google Patents
Blue-color-light emitting diodeInfo
- Publication number
- JPH06244458A JPH06244458A JP5507493A JP5507493A JPH06244458A JP H06244458 A JPH06244458 A JP H06244458A JP 5507493 A JP5507493 A JP 5507493A JP 5507493 A JP5507493 A JP 5507493A JP H06244458 A JPH06244458 A JP H06244458A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- light
- blue
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、透光性基板上に窒化ガ
リウム系化合物半導体が積層された発光素子を有する青
色発光ダイオード（以下、青色ＬＥＤという。）に係
り、特に該発光素子の細部の構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a blue light emitting diode (hereinafter referred to as a blue LED) having a light emitting element in which a gallium nitride compound semiconductor is laminated on a translucent substrate, and more particularly to details of the light emitting element. Concerning the structure of.
【０００２】[0002]
【従来の技術】一般に、青色ＬＥＤの発光素子の材料と
して、ＧａＮ、ＩｎＧａＮ、ＧａＡｌＮ、ＩｎＡｌＧａ
Ｎ等の窒化ガリウム系化合物半導体が知られている。こ
れら窒化ガリウム系化合物半導体を用いた発光素子を有
する従来の青色ＬＥＤの構造を図２に示す。１は透光性
基板、２は透光性基板１上に積層された窒化ガリウム系
化合物半導体（以下、本明細書においては、１と２とを
合わせて発光素子という。）３は窒化ガリウム系化合物
半導体２上の適切な位置に設けられた電極、４は発光素
子を載置するリードフレーム、５は発光素子全体を封止
し、窒化ガリウム系化合物半導体２からの発光を集光す
る樹脂モールドである。透光性基板１の材料にはサファ
イア、酸化亜鉛、酸化マグネシウム等の酸化物系単結晶
を使用することができ、一般的にはサファイアが用いら
れている。また樹脂モールド５には、エポキシ樹脂、ユ
リア樹脂等、耐候性に優れた透明樹脂が用いられる。こ
の図に示すように、従来の青色ＬＥＤはそのほとんど
が、発光素子の端面が垂直になるようにチップ状にカッ
トされ、透光性基板１側が上面、即ち発光観測面となる
ようにしてリードフレームに載置された構造を有してい
る。2. Description of the Related Art Generally, GaN, InGaN, GaAlN, InAlGa are used as materials for light emitting elements of blue LEDs.
Gallium nitride-based compound semiconductors such as N are known. The structure of a conventional blue LED having a light emitting element using these gallium nitride compound semiconductors is shown in FIG. Reference numeral 1 is a transparent substrate, 2 is a gallium nitride-based compound semiconductor (hereinafter, in the present specification, 1 and 2 are collectively referred to as a light emitting element) laminated on the transparent substrate 1, and 3 is a gallium nitride-based compound semiconductor. An electrode provided at an appropriate position on the compound semiconductor 2, 4 is a lead frame on which a light emitting element is mounted, 5 is a resin mold that seals the entire light emitting element and collects light emitted from the gallium nitride compound semiconductor 2. Is. As the material of the transparent substrate 1, oxide-based single crystals such as sapphire, zinc oxide, and magnesium oxide can be used, and sapphire is generally used. For the resin mold 5, a transparent resin having excellent weather resistance such as epoxy resin and urea resin is used. As shown in this figure, most of the conventional blue LEDs are cut into chips so that the end faces of the light emitting elements are vertical, and the light-transmissive substrate 1 side is the upper face, that is, the light emission observation face, and the leads are read. It has a structure mounted on the frame.
【０００３】[0003]
【発明が解決しようとする課題】この構造の発光素子に
おいて、例えば透光性基板１をサファイアとした場合、
サファイア基板１の厚さは通常数百μｍある。これに対
し、窒化ガリウム系化合物半導体の厚さはせいぜい数μ
ｍにしか過ぎず、窒化ガリウム系化合物半導体より放射
される全青色発光のうち、サファイア基板１の側面に達
する光は、全体の約１０〜４０％である。しかも、封止
樹脂をエポキシ樹脂とした場合、サファイアの屈折率を
約３とし、エポキシの屈折率を約１．５とすると、サフ
ァイアとエポキシ樹脂との境界での臨界角は約３０゜と
なり、側面に入射する３０゜以下の光は、全てサファイ
ア基板の側面から出て行ってしまい、有効利用されてい
ない。In the light emitting device having this structure, for example, when the transparent substrate 1 is sapphire,
The thickness of the sapphire substrate 1 is usually several hundred μm. On the other hand, the thickness of gallium nitride-based compound semiconductor is at most a few μ.
Of all blue light emitted from the gallium nitride-based compound semiconductor, the amount of light that reaches the side surface of the sapphire substrate 1 is about 10 to 40% of the total. Moreover, when the sealing resin is an epoxy resin and the refractive index of sapphire is about 3 and the refractive index of epoxy is about 1.5, the critical angle at the boundary between the sapphire and the epoxy resin is about 30 °, All the light of 30 ° or less incident on the side surface goes out from the side surface of the sapphire substrate and is not effectively used.
【０００４】ところで、リードフレームの形状をカップ
状として、そのカップの底に発光素子を載置して、側面
から出ていく光を、カップ側面で上部に反射させる方法
もあるが、リードフレームをカップ形状にすると、透光
性基板を上にして電極を下にするような構造の窒化ガリ
ウム系化合物半導体発光素子、つまり透光性基板を利用
した発光素子では、アッセンブリが生産技術上不可能で
ある。そのため、従来の青色ＬＥＤは、そのほとんどが
図２のような構造であり、この構造のＬＥＤはチップ側
面より出ていく光を有効利用できず、高い順方向電圧の
わりに、発光効率が低く、十分な輝度が得られないとい
う問題があった。There is also a method in which the shape of the lead frame is cup-shaped, and the light emitting element is placed on the bottom of the cup so that the light emitted from the side surface is reflected upward by the side surface of the cup. When the cup shape is used, assembly is not possible in terms of production technology for gallium nitride-based compound semiconductor light-emitting devices that have a structure in which the transparent substrate is on top and the electrodes are on the bottom, that is, a light-emitting device that uses a transparent substrate. is there. Therefore, most of the conventional blue LEDs have a structure as shown in FIG. 2, and the LED of this structure cannot effectively use the light emitted from the side surface of the chip, and the luminous efficiency is low despite the high forward voltage. There is a problem that sufficient brightness cannot be obtained.
【０００５】したがって本発明はこのような事情を鑑み
て成されたものであり、カップ等の反射板を必要とせ
ず、窒化ガリウム系化合物半導体を利用した発光素子の
側面から出る光を有効利用して、観測面側に取り出し、
青色ＬＥＤの発光効率を向上させることを目的とする。Therefore, the present invention has been made in view of such circumstances, and does not require a reflector such as a cup, but effectively utilizes the light emitted from the side surface of a light emitting device using a gallium nitride-based compound semiconductor. Take it out to the observation side,
The purpose is to improve the luminous efficiency of the blue LED.
【０００６】[0006]
【課題を解決するための手段】本発明の青色ＬＥＤは、
発光素子が少なくとも透光性基板と該透光性基板に積層
された窒化ガリウム系化合物半導体とからなり、さらに
該発光素子の透光性基板を上面としてリードフレーム上
に載置し、発光素子全体を樹脂モールドで封止してなる
青色発光ダイオードにおいて、前記発光素子の側面が、
透光性基板上面の鉛直方向より、鋭角θで切断されてい
ることを特徴とするものである。The blue LED of the present invention comprises:
The light-emitting element is composed of at least a light-transmitting substrate and a gallium nitride-based compound semiconductor laminated on the light-transmitting substrate, and the light-transmitting substrate of the light-emitting element is placed on a lead frame as an upper surface to form a whole light-emitting element. In a blue light emitting diode obtained by sealing with a resin mold, the side surface of the light emitting element is
It is characterized in that it is cut at an acute angle θ from the vertical direction of the upper surface of the transparent substrate.
【０００７】鋭角θの角度は特に限定するものではない
が、透光性基板の屈折率、樹脂モールドの屈折率によっ
て適宜変更することができる。窒化ガリウム系化合物半
導体の発光を全て透光性基板側（発光観測面側）に全反
射させるためには、鋭角θは、透光性基板の屈折率をｎ
1、前記樹脂モールドの屈折率をｎ2とした場合、ｓｉｎ
-1（ｎ2／ｎ1）以上の角度、即ち臨界角以上の角度で切
断されていることが好ましい。なお、この式により、全
ての青色発光を発光素子側面で全反射させる場合、樹脂
モールドの材料の屈折率が基板の屈折率よりも小さいも
のを選択することはいうまでもない。Although the angle of the acute angle θ is not particularly limited, it can be appropriately changed depending on the refractive index of the transparent substrate and the refractive index of the resin mold. In order to totally reflect all the light emitted from the gallium nitride-based compound semiconductor to the transparent substrate side (emission observation surface side), the acute angle θ is equal to the refractive index n of the transparent substrate.
1. If the refractive index of the resin mold is n2, then sin
It is preferable to cut at an angle of -1 (n2 / n1) or more, that is, an angle of a critical angle or more. It is needless to say that in the case of totally reflecting all the blue light emission on the side surface of the light emitting element by this formula, the material of the resin mold has a refractive index smaller than that of the substrate.
【０００８】また、発光素子の側面を斜めにカットする
には、例えばダイシングを用いることができ、刃先が所
望の角度に調整されているブレードを使用することによ
って切断可能である。Further, in order to cut the side surface of the light emitting element obliquely, for example, dicing can be used, and cutting can be performed by using a blade whose cutting edge is adjusted to a desired angle.
【０００９】[0009]
【作用】図４は、本発明の一実施例に係る青色ＬＥＤに
おいて、側面が鋭角θで切断された発光素子の構造を示
す図である。また図３は、側面が垂直に切断された従来
の発光素子の構造を示す図である。なおこれらの図は電
極、リードフレームを省略して示している。図４に示す
ように、発光素子の側面を、透光性基板１の上面から、
鋭角θで切断することにより、窒化ガリウム系化合物半
導体より発する青色発光、特に発光素子側面近傍の青色
発光を、透光性基板１で反射させて発光観測面に取り出
し、有効利用することが可能となる。一方、前にも説明
したように、図３に示す従来の発光素子は、透光性基板
１内で全反射したり、発光素子の側面から出て行ってし
まう光が圧倒的に多い。なお、この図４はθを臨界角以
上としていないため、一部側面から出ていく光もある
が、θを前述の式に基づいて臨界角以上で切断すること
により、全て観測面側に反射させることができるのは当
然である。FIG. 4 is a diagram showing the structure of a light emitting element in which the side surface is cut at an acute angle θ in the blue LED according to the embodiment of the present invention. Further, FIG. 3 is a view showing a structure of a conventional light emitting device whose side surface is vertically cut. Note that these figures are shown with the electrodes and lead frame omitted. As shown in FIG. 4, the side surface of the light emitting element is changed from the upper surface of the transparent substrate 1 to
By cutting at an acute angle θ, blue light emitted from the gallium nitride-based compound semiconductor, particularly blue light emitted in the vicinity of the side surface of the light emitting element, can be reflected by the transparent substrate 1 and taken out to the light emission observation surface for effective use. Become. On the other hand, as described above, the conventional light emitting element shown in FIG. 3 has an overwhelming amount of light that is totally reflected in the transparent substrate 1 or goes out from the side surface of the light emitting element. In addition, since θ is not set to the critical angle or more in FIG. 4, some light may be emitted from the side surface, but by cutting θ at the critical angle or more based on the above equation, all the light is reflected to the observation surface side. Of course, it can be done.
【００１０】このように、発光素子の側面を鋭角に切断
することにより、青色発光を多く観測面に反射させるこ
とができるため、青色発光ダイオードの発光出力を向上
させることができる。また、窒化ガリウム系化合物半導
体を有する発光素子は、他のＧａＡｓ、ＧａＰ、ＡｌＩ
ｎＧａＰ等の材料を用いた発光素子と異なり、材料自体
にへき開性を有していないため、斜めに切断しやすいと
いう利点を有している。このため、窒化ガリウム系化合
物半導体の発光素子の側面を斜めに切断して、その側面
で青色発光を反射させることは非常に重要である。As described above, by cutting the side surface of the light emitting element at an acute angle, a large amount of blue light can be reflected on the observation surface, so that the light emission output of the blue light emitting diode can be improved. Further, a light emitting device having a gallium nitride-based compound semiconductor is used for other GaAs, GaP, AlI
Unlike a light emitting element using a material such as nGaP, the material itself does not have a cleavage property, and thus has an advantage that it can be easily cut at an angle. Therefore, it is very important to cut the side surface of the gallium nitride-based compound semiconductor light emitting device obliquely and reflect the blue light emission on the side surface.
【００１１】[0011]
【実施例】予めサファイア基板の上にｎ型ＧａＮとｐ型
ＧａＮとを順に積層した２インチφのウエハーを用意
し、ｐ型ＧａＮ層の一部をエッチングして、ｎ型ＧａＮ
層を一部露出させる。次に、露出させたｎ型ＧａＮ層
と、ｐ型ＧａＮとに所定の形状で電極を蒸着した後、サ
ファイア基板に粘着テープを張り付ける。EXAMPLE A 2-inch φ wafer in which n-type GaN and p-type GaN were sequentially stacked on a sapphire substrate was prepared, and a part of the p-type GaN layer was etched to form n-type GaN.
Expose part of the layer. Next, after depositing electrodes in a predetermined shape on the exposed n-type GaN layer and p-type GaN, an adhesive tape is attached to the sapphire substrate.
【００１２】一方、ウエハーを斜めにカットするため、
図５に示すように刃先の中心線に向かってそれぞれ両側
に３０゜の傾斜を設けたブレードを用意してダイシング
ソーにセットする。次に、前述のウエハーをテーブルに
貼付し、ダイシングでｐ型ＧａＮ層側からＸ軸をカット
した後、テーブルを９０゜回転させ、今度はＹ軸をカッ
トする。On the other hand, since the wafer is cut diagonally,
As shown in FIG. 5, blades having inclinations of 30 ° on both sides toward the center line of the cutting edge are prepared and set on a dicing saw. Next, the above-mentioned wafer is attached to a table, the X axis is cut from the p-type GaN layer side by dicing, the table is rotated 90 °, and the Y axis is cut this time.
【００１３】最後にウエハーをテーブルから剥し取り、
チップ状に分離した後、チップをサファイア基板面が発
光観測面になるようにして、リードフレームに取り付
け、電極とリードフレームとを電気的に接続した後、エ
ポキシ樹脂でレンズ状にモールドすることにより、本発
明の青色ＬＥＤを得る。Finally, the wafer is peeled off the table,
After separating into chips, the chips are attached to the lead frame with the sapphire substrate surface serving as the emission observation surface, the electrodes and the lead frames are electrically connected, and then molded into a lens shape with epoxy resin. , To obtain the blue LED of the present invention.
【００１４】このようにして得た青色ＬＥＤは、順方向
電圧５Ｖで、発光出力２０μＷを示した。一方、側面を
垂直にカットしたチップよりなる従来の青色ＬＥＤは発
光出力は１０μＷとほぼ半分しかなかった。The blue LED thus obtained showed a light emission output of 20 μW at a forward voltage of 5V. On the other hand, the conventional blue LED consisting of a chip whose side face is cut vertically has a light emission output of 10 μW, which is almost half.
【００１５】[0015]
【発明の効果】以上説明したように、本発明の青色ＬＥ
Ｄはその発光素子の側面を斜めにカットしているため
に、窒化ガリウム系化合物半導体の発光を、その側面で
反射させて透光性基板から有効に取り出すことができ
る。しかも従来のようにカップ状のリードフレームも必
要とせず、生産性にも非常に優れている。As described above, the blue LE of the present invention is used.
Since D has the side surface of the light emitting element cut obliquely, the light emission of the gallium nitride-based compound semiconductor can be reflected on the side surface and can be effectively extracted from the translucent substrate. Moreover, it does not require a cup-shaped lead frame as in the past, and is very excellent in productivity.
【図１】 本発明の青色ＬＥＤに係る発光素子の側面の
構造を一部拡大して示す断面図。FIG. 1 is a partially enlarged cross-sectional view showing a structure of a side surface of a light emitting element relating to a blue LED of the present invention.
【図２】 従来の青色ＬＥＤの構造を示す断面図。FIG. 2 is a sectional view showing the structure of a conventional blue LED.
【図３】 従来の発光素子の構造を示す断面図。FIG. 3 is a sectional view showing a structure of a conventional light emitting element.
【図４】 本発明の一実施例に係る発光素子の構造を示
す断面図。FIG. 4 is a sectional view showing a structure of a light emitting device according to an embodiment of the present invention.
【図５】 ダイシングソーのブレードの刃先角を示す断
面図。FIG. 5 is a cross-sectional view showing a cutting edge angle of a blade of a dicing saw.
１・・・・・・透光性基板 ２・・・・・・窒化ガリウム系化合物半導体 ３・・・・・・電極 ４・・・・・・リードフレーム ５・・・・・・樹脂モールド 1-Translucent substrate 2-Gallium nitride compound semiconductor 3-Electrode 4-Lead frame 5-Resin mold
Claims (2)
光性基板に積層された窒化ガリウム系化合物半導体とか
らなり、さらに該発光素子の透光性基板を上面としてリ
ードフレーム上に載置し、発光素子全体を樹脂モールド
で封止してなる青色発光ダイオードにおいて、 前記発光素子の側面が、透光性基板上面の鉛直方向よ
り、鋭角θで切断されていることを特徴とする青色発光
ダイオード。1. A light emitting element is composed of at least a transparent substrate and a gallium nitride-based compound semiconductor laminated on the transparent substrate, and is mounted on a lead frame with the transparent substrate of the light emitting element as an upper surface. In a blue light emitting diode in which the entire light emitting element is sealed with a resin mold, the side surface of the light emitting element is cut at an acute angle θ from the vertical direction of the upper surface of the translucent substrate. diode.
をｎ1、前記樹脂モールドの屈折率をｎ2とすると、θ≧
ｓｉｎ-1（ｎ2／ｎ1）の関係にあることを特徴とする請
求項１に記載の青色発光ダイオード。2. The acute angle θ is θ ≧ when the refractive index of the transparent substrate is n1 and the refractive index of the resin mold is n2.
The blue light emitting diode according to claim 1, wherein the blue light emitting diode has a relationship of sin -1 (n2 / n1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5507493A JP2964822B2 (en) | 1993-02-19 | 1993-02-19 | Manufacturing method of light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5507493A JP2964822B2 (en) | 1993-02-19 | 1993-02-19 | Manufacturing method of light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06244458A true JPH06244458A (en) | 1994-09-02 |
| JP2964822B2 JP2964822B2 (en) | 1999-10-18 |
Family
ID=12988555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5507493A Expired - Fee Related JP2964822B2 (en) | 1993-02-19 | 1993-02-19 | Manufacturing method of light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2964822B2 (en) |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10308532A (en) * | 1997-05-06 | 1998-11-17 | Sony Corp | Semiconductor light-emitting element |
| JP2002528890A (en) * | 1998-10-21 | 2002-09-03 | サーノフ コーポレイション | Wavelength conversion performing device using phosphor having light emitting diode |
| WO2002089221A1 (en) * | 2001-04-23 | 2002-11-07 | Matsushita Electric Works, Ltd. | Light emitting device comprising led chip |
| JP2004002823A (en) * | 2002-04-26 | 2004-01-08 | Kanegafuchi Chem Ind Co Ltd | Composition for optical material, optical material, manufacturing method for the opical material, and light-emitting diode using the same |
| US6853010B2 (en) | 2002-09-19 | 2005-02-08 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
| US6995400B2 (en) | 2002-09-30 | 2006-02-07 | Fuji Photo Film Co., Ltd. | Light emitting device and manufacturing method thereof |
| US7029935B2 (en) | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
| JP2006206918A (en) * | 2002-04-26 | 2006-08-10 | Kaneka Corp | Composition for optical material, optical material and method for producing the same |
| US7183587B2 (en) | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
| CN100391016C (en) * | 2003-07-18 | 2008-05-28 | 三洋电机株式会社 | Light-emitting diode |
| US7391153B2 (en) * | 2003-07-17 | 2008-06-24 | Toyoda Gosei Co., Ltd. | Light emitting device provided with a submount assembly for improved thermal dissipation |
| JP2009135539A (en) * | 2009-03-16 | 2009-06-18 | Toyoda Gosei Co Ltd | Method of manufacturing solid-state element device |
| US7572657B2 (en) | 2004-08-20 | 2009-08-11 | Showa Denko K.K. | Method for fabrication of semiconductor light-emitting device and the device fabricated by the method |
| JP2010034608A (en) * | 2005-06-22 | 2010-02-12 | Seoul Opto Devices Co Ltd | Light-emitting element |
| EP2270103A2 (en) | 2000-12-27 | 2011-01-05 | Kaneka Corporation | Curing agent, curable compositions, compositions for optical materials, optical materials, their production, and liquid crystal displays and LED's made by using the materials |
| US7968897B2 (en) | 2004-03-09 | 2011-06-28 | Sanyo Electric Co., Ltd. | Light-emitting device having a support substrate and inclined sides |
| JP2014160797A (en) * | 2013-02-19 | 2014-09-04 | Lextar Electronics Corp | Light-emitting diode chip and method for manufacturing the same |
| US8858004B2 (en) | 2005-12-22 | 2014-10-14 | Cree, Inc. | Lighting device |
| US8934513B2 (en) | 1994-09-14 | 2015-01-13 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| USRE45796E1 (en) | 2004-12-23 | 2015-11-10 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
| US9220149B2 (en) | 2006-01-20 | 2015-12-22 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
| US9608166B2 (en) | 2003-08-14 | 2017-03-28 | Cree, Inc. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
| US9841175B2 (en) | 2012-05-04 | 2017-12-12 | GE Lighting Solutions, LLC | Optics system for solid state lighting apparatus |
| US9951938B2 (en) | 2009-10-02 | 2018-04-24 | GE Lighting Solutions, LLC | LED lamp |
| EP3369735A1 (en) | 2013-11-25 | 2018-09-05 | Shikoku Chemicals Corporation | Glycolurils having functional group and use thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6229160B1 (en) | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
| US6784463B2 (en) | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
-
1993
- 1993-02-19 JP JP5507493A patent/JP2964822B2/en not_active Expired - Fee Related
Cited By (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8934513B2 (en) | 1994-09-14 | 2015-01-13 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| JPH10308532A (en) * | 1997-05-06 | 1998-11-17 | Sony Corp | Semiconductor light-emitting element |
| JP2002528890A (en) * | 1998-10-21 | 2002-09-03 | サーノフ コーポレイション | Wavelength conversion performing device using phosphor having light emitting diode |
| EP2270103A2 (en) | 2000-12-27 | 2011-01-05 | Kaneka Corporation | Curing agent, curable compositions, compositions for optical materials, optical materials, their production, and liquid crystal displays and LED's made by using the materials |
| WO2002089221A1 (en) * | 2001-04-23 | 2002-11-07 | Matsushita Electric Works, Ltd. | Light emitting device comprising led chip |
| JP2004002823A (en) * | 2002-04-26 | 2004-01-08 | Kanegafuchi Chem Ind Co Ltd | Composition for optical material, optical material, manufacturing method for the opical material, and light-emitting diode using the same |
| JP2006206918A (en) * | 2002-04-26 | 2006-08-10 | Kaneka Corp | Composition for optical material, optical material and method for producing the same |
| US6853010B2 (en) | 2002-09-19 | 2005-02-08 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
| US6995400B2 (en) | 2002-09-30 | 2006-02-07 | Fuji Photo Film Co., Ltd. | Light emitting device and manufacturing method thereof |
| US7391153B2 (en) * | 2003-07-17 | 2008-06-24 | Toyoda Gosei Co., Ltd. | Light emitting device provided with a submount assembly for improved thermal dissipation |
| CN100391016C (en) * | 2003-07-18 | 2008-05-28 | 三洋电机株式会社 | Light-emitting diode |
| US9608166B2 (en) | 2003-08-14 | 2017-03-28 | Cree, Inc. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
| US7183587B2 (en) | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
| US7029935B2 (en) | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
| US7968897B2 (en) | 2004-03-09 | 2011-06-28 | Sanyo Electric Co., Ltd. | Light-emitting device having a support substrate and inclined sides |
| US7572657B2 (en) | 2004-08-20 | 2009-08-11 | Showa Denko K.K. | Method for fabrication of semiconductor light-emitting device and the device fabricated by the method |
| USRE45796E1 (en) | 2004-12-23 | 2015-11-10 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
| US7977691B2 (en) | 2005-06-22 | 2011-07-12 | Seoul Opto Device Co., Ltd. | Light emitting device and method of manufacturing the same |
| US9627435B2 (en) | 2005-06-22 | 2017-04-18 | Seoul Viosys Co., Ltd. | Light emitting device |
| US8476648B2 (en) | 2005-06-22 | 2013-07-02 | Seoul Opto Device Co., Ltd. | Light emitting device and method of manufacturing the same |
| US8704246B2 (en) | 2005-06-22 | 2014-04-22 | Seoul Opto Device Co., Ltd. | Light emitting device and method of manufacturing the same |
| US10340309B2 (en) | 2005-06-22 | 2019-07-02 | Seoul Viosys Co., Ltd. | Light emitting device |
| US7951626B2 (en) | 2005-06-22 | 2011-05-31 | Seoul Opto Device Co., Ltd. | Light emitting device and method of manufacturing the same |
| US8895957B2 (en) | 2005-06-22 | 2014-11-25 | Seoul Viosys Co., Ltd | Light emitting device and method of manufacturing the same |
| US7723737B2 (en) | 2005-06-22 | 2010-05-25 | Seoul Opto Device Co., Ltd. | Light emitting device |
| JP2010034608A (en) * | 2005-06-22 | 2010-02-12 | Seoul Opto Devices Co Ltd | Light-emitting element |
| US9209223B2 (en) | 2005-06-22 | 2015-12-08 | Seoul Viosys Co., Ltd. | Light emitting device and method of manufacturing the same |
| US9929208B2 (en) | 2005-06-22 | 2018-03-27 | Seoul Vlosys Co., Ltd. | Light emitting device |
| US8858004B2 (en) | 2005-12-22 | 2014-10-14 | Cree, Inc. | Lighting device |
| US9220149B2 (en) | 2006-01-20 | 2015-12-22 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
| JP2009135539A (en) * | 2009-03-16 | 2009-06-18 | Toyoda Gosei Co Ltd | Method of manufacturing solid-state element device |
| US9951938B2 (en) | 2009-10-02 | 2018-04-24 | GE Lighting Solutions, LLC | LED lamp |
| US9841175B2 (en) | 2012-05-04 | 2017-12-12 | GE Lighting Solutions, LLC | Optics system for solid state lighting apparatus |
| US10139095B2 (en) | 2012-05-04 | 2018-11-27 | GE Lighting Solutions, LLC | Reflector and lamp comprised thereof |
| JP2014160797A (en) * | 2013-02-19 | 2014-09-04 | Lextar Electronics Corp | Light-emitting diode chip and method for manufacturing the same |
| EP3369735A1 (en) | 2013-11-25 | 2018-09-05 | Shikoku Chemicals Corporation | Glycolurils having functional group and use thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2964822B2 (en) | 1999-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH06244458A (en) | Blue-color-light emitting diode | |
| US10903397B2 (en) | Light emitting device package | |
| USRE49047E1 (en) | Light emitting device | |
| US10043955B2 (en) | Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same | |
| KR101002111B1 (en) | Light emitting device and its manufacturing method | |
| US7977686B2 (en) | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices | |
| US7329905B2 (en) | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices | |
| US7169632B2 (en) | Radiation-emitting semiconductor component and method for producing the semiconductor component | |
| JP5186800B2 (en) | Nitride semiconductor light emitting device, light emitting device including the same, and method for manufacturing nitride semiconductor light emitting device | |
| CN105393373B (en) | Light emitting device with optical element and reflector | |
| US8878214B2 (en) | Semiconductor light emitting device | |
| JPH08102549A (en) | Semiconductor light emitting element | |
| US20100025702A1 (en) | Substrate-free flip chip light emitting diode | |
| US9601668B2 (en) | Light emitting device | |
| TWI493758B (en) | Semiconductor light emitting device and a light emitting module | |
| TW201208134A (en) | Light emitting device and semiconductor wafer | |
| GB2426123A (en) | Substrate-free flip chip light emitting diode | |
| TWI453952B (en) | Light emitting element and manufacturing method thereof | |
| JP2007088080A (en) | Light emitting device | |
| US10505071B2 (en) | Method of manufacturing a light emitting device | |
| JP2004289182A (en) | Semiconductor light emitting device | |
| KR100785451B1 (en) | Light emitting device having patterned trasparent electrode layer and method of fabricating the same | |
| GB2437848A (en) | Substrate-free flip-chip light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070813 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080813 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090813 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090813 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090813 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100813 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100813 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110813 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110813 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120813 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120813 Year of fee payment: 13 |
|
| LAPS | Cancellation because of no payment of annual fees |