JPH06244361A - Plastic sealed type semiconductor device - Google Patents

Abstract

PURPOSE:To increase the productivity of a plastic sealed type semiconductor device having a multi-structure. CONSTITUTION:In a sealed semiconductor device, a number of small scale sealed semiconductor devices 10A and 10B are stacked and connected with each other so as to constitute a large scale semiconductor device. The small scale sealed semiconductor device has openings 5A and 5B which are formed in both upper and lower surfaces or either surface of the sealed portion. Parts of external leads 2A and 2B, which are embedded in the sealed portion, are exposed from these openings. Connection pins 11A and 11B are provided at the end of the lower semiconductor device 10A and the upper semiconductor device 10B. The connection pins 11A and 11B are inserted into the openings formed in the surfaces of the upper and lower semiconductor devices which are opposed to each other, and come into contact with the external leads 2A and 2B. The connection pins 11A and 11B are joined to the external leads 2A and 2B, so that a metal wiring body 12 has a predetermined wiring route. Thus, the upper semiconductor device 10B and the lower semiconductor device 10B are stacked one on top of the other via the metal wiring body 12. The semiconductor devices 10A and 10B are electrically connected and fixed to each other.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a resin-sealed semiconductor device,
In particular, the present invention relates to a resin-encapsulated semiconductor device having a multiple structure in which a plurality of small-scale resin-encapsulated semiconductor devices are stacked, electrically connected to each other, and integrated on a large scale.

With the recent miniaturization of electronic equipment, high-density mounting of electronic components such as semiconductor devices has been strongly desired. In order to meet this demand, in resin-sealed semiconductor devices such as ICs enclosed in plastic packages, a plurality of small-function small-scale resin-sealed semiconductor devices are stacked and electrically connected to each other. It has been proposed as an effective means to make a multi-functional large-scale semiconductor device without increasing the area.

[0003]

2. Description of the Related Art FIG. 6 is a long side direction side view (a) and a short side direction side view (b) schematically showing a conventional example of a resin-encapsulated semiconductor device having a stacked structure, that is, a multiple structure.

As shown in this figure, the conventional semiconductor device described above corresponds to a plurality of small-function small-scale insertion-type resin-sealed semiconductor devices 51A, 51B, 51C, 51D having the same outer structure. Each external lead 52A, 52B, 52C,
52D and the like are stacked in contact with each other, and the contact portion of each external lead is electrically and mechanically bonded and fixed by a molten metal 53 such as solder.

[0005]

As described above, in the conventional resin-encapsulated semiconductor device having the multiple structure, the small-capacity resin-encapsulated semiconductor device 51A having a small function can be stacked.
51B, 51C, 51D and other external leads located at the same position are connected to each other to form a multi-functional large-scale resin-encapsulated semiconductor device. Since it is necessary to change each kind of function of the resin-encapsulated semiconductor device, many kinds of small-scale resin-encapsulated semiconductor devices having the same shape and different functions must be manufactured. There has been a problem that productivity is extremely deteriorated due to an increase in processes and manufacturing steps.

Therefore, the present invention provides a multiple structure capable of forming a multi-functional large-scale resin-encapsulated semiconductor device by using a small-scale resin-encapsulated semiconductor device having the same function. It is an object of the present invention to improve the productivity of the multi-functional large-scale resin-encapsulated semiconductor device that it has.

[0007]

A solution to the above-mentioned problems is a resin-sealed semiconductor device which is constructed in a large scale by stacking a plurality of small-scale resin-sealed semiconductor devices and connecting them to each other. The small-scale resin-encapsulated semiconductor device has openings on the upper and lower surfaces of the resin-encapsulated portion or on one of the surfaces to expose the portion of the external lead embedded in the resin-encapsulated portion. The semiconductor device and the upper semiconductor device are provided with connecting pins at their ends, and the connecting pins are joined to the external leads that are inserted into and abut against the facing surfaces of the upper and lower semiconductor devices. The resin-sealed semiconductor device according to the present invention or the plurality of small-scale resin-sealed semiconductor devices that are stacked and electrically connected and fixed via the metal wiring body having the predetermined wiring path are stacked and Connected to each other and configured at scale In the resin-sealed semiconductor device according to claim 1, the small-scale resin-sealed semiconductor device has a portion embedded in the resin-sealed portion of the external lead on the upper and lower surfaces of the resin-sealed portion or on one of the surfaces. The semiconductor device in the lower stage and the semiconductor device in the upper stage, which have exposed holes, are joined to the internal lead that is inserted into and abuts the holes in the facing surfaces of the upper and lower semiconductor devices. The present invention is achieved by the resin-sealed semiconductor device according to the present invention, which is stacked and electrically connected and fixed via wiring boards having connection pins and having a predetermined wiring path.

[0008]

That is, in the present invention, a small opening for exposing the external lead embedded in the resin to the bottom is provided in the resin encapsulation portion of a small-function small-scale resin encapsulation type semiconductor device, and the semiconductor of the lower stage is formed. A metal wiring having a desired wiring path, which has a connection pin that can be inserted into the small opening, in which the device and the upper semiconductor device to be overlaid on the device are sandwiched between the upper and lower semiconductor devices. A multifunctional or large-scale resin-sealed semiconductor device is configured by connecting and fixing to a desired circuit configuration by a body or a wiring board. Therefore, by changing the wiring path, that is, the circuit pattern of the metal wiring body or the wiring board, a small-scale resin-sealed semiconductor device having the same function is used, and various multi-functional or large-scale circuits having a more complicated circuit configuration are used. A large-scale resin-encapsulated semiconductor device can be easily formed, and productivity in manufacturing a multi-functional multi-functional large-scale resin-encapsulated semiconductor device is significantly improved.

[0009]

EXAMPLES The present invention will be described in detail below with reference to illustrated examples. FIG. 1 is a schematic view of an embodiment of a small-scale resin-sealed semiconductor device used in the present invention. (A) is a plan view, (b) is a cross-sectional view, and FIG. 2 is a multiple structure resin-sealed type of the present invention. 1A and 1B are schematic views of a first embodiment of a semiconductor device, (a) is a sectional view, (b) is a side view,
3A and 3B are views showing a second embodiment of a multi-structure resin-encapsulated semiconductor device of the present invention, wherein FIG. 3A is a schematic side view of a wiring board, and FIG.
Is a schematic side view of the completed product, FIG. 4 is a schematic side view of a third embodiment of the multiple structure resin-encapsulated semiconductor device of the present invention, and FIG. 5 is a fourth view of the multiple structure resin-encapsulated semiconductor device of the present invention. It is a schematic side view of the Example of. The same object is denoted by the same reference numeral throughout the drawings.

When constructing a large-scale and large-scale resin-encapsulated semiconductor device having a multiple structure according to the present invention, as a unit semiconductor device to be stacked, for example, a flat structure formed by molding as shown in FIG. The resin package 4 has small openings 5A, 5B of, for example, about 0.2 mmφ, which are embedded in the resin package 4 and expose the embedded portions of the external leads 2 in the package 4 on the periphery of both sides of the resin package 4.
A surface-mounting resin-molded semiconductor device 1 having a flat structure, which is formed and arranged at the same time when molding is performed, is used. Inside the package 4, the semiconductor chip 7 is fixed on the chip stage 6 by a chip fixing material 8 made of a brazing material, a conductive resin resin or the like as usual, and a bonding pad (not shown) of the semiconductor chip 7 and the external lead 2 are attached.
Is connected to the inner end portion of by a bonding wire 9. The small holes may be provided on only one of the surfaces to be connected.

In the first embodiment of the multiple structure resin-sealed semiconductor device according to the present invention, as shown in the schematic sectional view of FIG. 2 (a), for example, the flat structure shown in FIG.
Each of the resin-molded semiconductor devices 10A and 10B is provided with connection pins 11A and 11B which can be inserted into the small openings 5A and 5B formed in the semiconductor devices 10A and 10B between the ends, for example, copper (Cu). ) Connect the metal wiring body 12, such as an alloy, to the connection pins 11A and
External lead 2A that sandwiches 11B with small holes 5B and 5A of the semiconductor device facing each other and sandwiches the tip of each inserted pin with conductive bonding material 13 such as conductive resin or solder. And 2B, and is electrically and mechanically bonded and fixed.

In FIG. 2 (a), in order to facilitate understanding, the lower semiconductor device 10A and the upper semiconductor device 1 are shown.
Although the leads 2A and 2B to which 0B is connected are shown in the same cross section, in practice, the metal wiring body 12 is often formed by bending so as to form a desired wiring path. The leads are not always in the same position.

The state is shown in the schematic side view of FIG. 2 (b). In this figure, the lower resin-molded semiconductor device 10A is shown.
External lead 2A ₂ is the upper resin-molded semiconductor device 10B
Although it is connected to the external lead 2B ₂ in the same position by the metal wiring body 12A, the lower resin-molded semiconductor device 10A
The external leads 2A ₈ are connected by the metal wiring body 12B that is bent to the external lead 2B ₉ of the upper resin molding semiconductor device. Note in this figure, not shown metal wiring body 12A, the connection pins and the external lead 2A ₂ of 12B such, 2B _2, 2A
The joint structure with ₈ , 2B ₉ and the like is similar to the joint structure shown in FIG. 2 (a), and is not shown.

Although the semiconductor devices having the same external dimensions and external lead arrangement have been described above, the connection structure by the metal wiring body can be applied to semiconductor devices having different external dimensions and external lead arrangement. Of course.

FIG. 3 is a view showing a second embodiment of the present invention in which resin-sealed semiconductor devices are stacked via a wiring board.
(a) is a schematic side view of a wiring board, and (b) is a schematic side view of a completed product.

In this embodiment, in order to multiplex the semiconductor device, the wiring layer 13 in which a circuit of a desired wiring route is formed as shown in FIG. 3A instead of the metal wiring body.
A wiring board 14A having A is used.
Is sandwiched between semiconductor devices to form a multiple structure. Therefore, connection pins, such as 15A, 15B, 15C, and 15D, are provided on both surfaces of the wiring board 14A at the positions of the small holes that expose the external leads to be connected to the semiconductor devices to be stacked. Here, for example, the connection pins 15A and 15C are connected by the through hole 16A, and the connection pins 15B and 15D are connected by the wiring layer 13A and the through hole 16B.

In addition, the semiconductor device to be multiplexed has a small opening (not shown) for exposing the buried portion of the external lead in the resin package, for example, the same outer shape as in the above embodiment. Also, a resin-molded semiconductor device having a flat structure having an external lead arrangement is used, and the semiconductor device and the wiring board are connected to each other in the small opening of the resin package of the semiconductor device as in the case of FIG. Is inserted, and the external lead that abuts is joined and fixed by a conductive joining material.

FIG. 3B shows the above wiring board 14A with the wiring board 14A interposed therebetween.
The above resin-molded semiconductor devices 10A and 10B are stacked.
The completed structure of the resin-molded semiconductor device with the multiple structure is shown.
You In this semiconductor device, the lower resin mold half
External lead 2A of conductor device 10A ₂And the upper half of the resin mold
External lead 2B of conductor device 10B₂And are connected to the wiring board 14A
Connected via pins 15C, 15A and through hole 16A.
The external lead 2A of the lower resin-molded semiconductor device 10A
₇And the external lead 2B of the resin-molded semiconductor device 10B on the upper side
₉And are the connection pins 15D and the through holes 16B on the wiring board 14A.
 , Be connected via the wiring layer 13A and the connection pin 15B.
Multi-functional large-scale multi-structure resin-molded semiconductor device
Are formed. In this figure, the resin package
Of small openings and connecting pins that expose the external leads provided
The structure of the part and the joint part inserted in the small hole is shown in the figure.
Since it is the same as that shown in FIG.

The schematic side view shown in FIG. 4 is an example in which semiconductor devices having different outer shapes are stacked on a large resin-sealed semiconductor device via a wiring board to form an integrated semiconductor device. .

That is, in this example, a large-sized wiring board 14 is provided on a large-sized resin-molded semiconductor device 10C having a flat structure.
Small resin-molded semiconductor devices 10D having a flat structure are stacked via B, and semiconductor devices 21A, 21B having other structures are mounted on the same wiring board 14B. The stacking method of the semiconductor device 10D is the same as that of the above embodiment, and the external leads 2A ₁₈ of the semiconductor device 10C and the external leads of the semiconductor device 10D are connected through the connection pins 15E, the through holes 16E and the connection pins 15F of the wiring board 14B. 2B ₂
The wiring board 14B connection pins 15G, through holes 16G,
The external lead 2A ₂₂ of the semiconductor device 10C and the external lead 2B ₉ of the semiconductor device 10D are connected to each other via the wiring layer 13B and the connection pin 15H. Further, another structure of the semiconductor device 21A by soldering at least the outer lead 22A for example via a through hole 16I to the top of the connection pin 15I connecting at least the external leads 2A ₉ of the lower semiconductor device 10C of the wiring board 14B Are directly joined and fixed in an upright state, and the external leads 2A ₃ and 2A of the semiconductor device 10C in the lower stage are further fixed.
_The state where the semiconductor device 21B of other structure is upright by connecting the external leads 22B ₁ and 22B ₂ to the upper part of the connection pins 15J and 15K to be connected to ₅ via the through holes 16J and 16K, respectively. Are connected and fixed together, and a multifunctional and large-scale semiconductor device is constituted by the whole of them. The connection structure between the connection pins of the wiring board and the external leads of the semiconductor device is the same as that of the above-mentioned embodiment and is omitted in this figure.

FIG. 5 is a schematic side view showing that small resin mold semiconductor devices having a flat structure are stacked in multiple stages on a large resin mold semiconductor device having a flat structure via a large wiring board and a metal wiring body. A semiconductor device having another structure is vertically mounted on the same wiring board by the same means as in the above-mentioned embodiment, and further, the wiring board has a metal heat radiator in contact with the lower resin-molded semiconductor device. 1 shows an example in which a radiation fin is fixedly attached to a multi-functional first-scale semiconductor device.

That is, in this example, the connection pin 15L is provided on the large-sized resin-molded semiconductor device 15C having a flat structure in the lower stage.
~ 15R to connect to the external leads 2A _{1 to} 2A ₇ of the semiconductor device 15C, and connect the semiconductor device 15C to the connection pins 15S to 15Y.
Large wiring board 14C to connect to external leads 2A _{19 to} 2A ₂₅
Is fixed. On this wiring board 14C, a metal radiator 17 such as Cu or Al whose bottom surface is in contact with the lower semiconductor device 15C is fixed to the center of the wiring board 14C.
A radiation fin 18 made of u, Al or the like is fixed. In addition, on one area of the wiring board 14C, the small flat type resin-molded semiconductor devices 10D, 10E, 10F, and 10G, which are stacked in four stages by using the wiring body 12 as described above, also have the same wiring body. 12. Wiring board 14C is connected to the external leads 2A ₂₀ and 2A ₂₃ of the large-sized resin-molded semiconductor device 15C below through the wiring layer, through holes, etc. (not shown) of the wiring board 14C and connection pins, for example, 15T and 15W, respectively.
The other regions of 14C On the wiring pattern (not shown), connecting pins 15L of different structures to be connected to either the external lead 2A ₁ to 2A region ₇ of the lower large resin molded semiconductor device 15C through either ~15R The semiconductor devices 21C, 21D, 21E, etc. are mounted upright, for example, directly on the circuit wiring by soldering or the like, and the whole of them constitutes a multifunctional large-scale semiconductor device. The connection structure between the connection pins of the wiring board and the metal wiring body and the external leads of the semiconductor device is omitted as in the above embodiment.

As shown in the above embodiment, in the present invention, a small opening for exposing the external lead embedded in the resin to the bottom is provided in the resin-sealed portion of the resin-sealed semiconductor device, The semiconductor device of the lower stage and the semiconductor device of the upper stage which is stacked on the upper stage are connected by a metal wiring body or a wiring board having a connection pin that can be inserted into the small opening and having a desired wiring path. An integrated, multi-functional and large-scale resin-encapsulated semiconductor device is formed. Therefore, a small-scale resin semiconductor device having the same function is used by variously changing the wiring route of the metal wiring body or the wiring board as desired, and a multi-function large-scale resin-sealed semiconductor device having various different functions is used. Can be easily formed.

The resin-encapsulated semiconductor device to be multiplexed is not limited to the flat surface-mounted semiconductor device shown in the above embodiment. Also, the connection between the connection pin and the external lead can be performed by laser welding.

[0025]

As described above, according to the present invention, by multiplexing small-scale resin-sealed semiconductor devices having the same function, various multi-functions or large-scales having a more complicated circuit configuration can be obtained. Since the resin-encapsulated semiconductor device can be easily formed, the productivity of the multi-functional multi-functional large-scale resin-encapsulated semiconductor device is significantly improved.

[Brief description of drawings]

FIG. 1 is a schematic view of an embodiment of a small-scale resin-sealed semiconductor device used in the present invention.

FIG. 2 is a schematic diagram of a first embodiment of a multiple structure resin-encapsulated semiconductor device of the present invention.

FIG. 3 is a diagram showing a second embodiment of a multi-structure resin-encapsulated semiconductor device of the present invention.

FIG. 4 is a schematic side view of a third embodiment of a multiple structure resin-sealed semiconductor device of the present invention.

FIG. 5 is a schematic side view of a fourth embodiment of a multiple structure resin-sealed semiconductor device of the present invention.

FIG. 6 is a schematic view of a conventional example of a multi-structure resin-encapsulated semiconductor device.

[Explanation of symbols]

1, 10A, 10B Surface mount type resin mold semiconductor device 2, 2A, 2B, 2A ₂ , 2A ₈ , 2B ₂ , 2B ₉ External lead 4 Resin package 5A, 5B Small opening 6 Chip stage 7 Semiconductor chip 8 Chip fixing material 9 Bonding wire 11A, 11B Connection pin 12, 12A, 12B Metal wiring body 13 Conductive bonding material

Claims (5)

[Claims] 1. A resin-encapsulated semiconductor device in which a plurality of small-scale resin-encapsulated semiconductor devices are stacked and connected to each other to form a large scale, wherein the small-scale resin-encapsulated semiconductor device is A lower semiconductor device and an upper semiconductor device, each of which has an opening for exposing a portion of the external lead embedded in the resin encapsulation part on the upper and lower surfaces of the resin encapsulation part or on one of the surfaces. A metal wiring body having a connecting pin at an end thereof and having a predetermined wiring path joined to the external lead that is inserted into and abuts the opening of the facing surface of the upper and lower semiconductor devices. A resin-encapsulated semiconductor device, wherein the resin-encapsulated semiconductor device is stacked by means of, and electrically connected and fixed. 2. A resin-encapsulated semiconductor device in which a plurality of small-scale resin-encapsulated semiconductor devices are stacked and connected to each other to form a large scale, wherein the small-scale resin-encapsulated semiconductor device is A lower semiconductor device and an upper semiconductor device, each of which has an opening for exposing a portion of the external lead embedded in the resin encapsulation part on the upper and lower surfaces of the resin encapsulation part or on one of the surfaces. Are stacked via a wiring board having a predetermined wiring path, which has connection pins joined to the internal leads that are inserted into and abut against the facing surfaces of the upper and lower semiconductor devices, and are electrically connected. A resin-encapsulated semiconductor device, characterized in that it is connected and fixed to. 3. The connection with the external lead, which abuts the connection pin of the wiring body or the wiring board, is made of molten metal,
The resin-encapsulated semiconductor device according to claim 1 or 2, which is made of a conductive resin or welded. 4. The resin-sealed semiconductor device according to claim 2, wherein the wiring board has another semiconductor device directly fixedly connected to the wiring board. 5. The resin-encapsulated semiconductor device according to claim 2, wherein the wiring board has a metal heat radiator that is in contact with at least the lower semiconductor device.