JPH06244006A - Substrate with thin-film resistor, ink jet head and ink jet head device - Google Patents

Abstract

PURPOSE:To suppress an expansion of a protection film and prevent a separation or the like between a heating resistor and the protection film by specifying the ratio of argon atoms contained in the protection film. CONSTITUTION:An SiO2 film is formed by thermal oxidation on the surface of a Si wafer which serves as a device supporter 5 and used as a low part layer 6 of an element 1. A heating resistant layer 7 of HfB2 is formed on this lower part layer 6 by sputtering. Then, a Ti layer and an Al layer are continuously deposited by electronic beam deposition, thereby forming a common wiring electrode 3 and a selection wiring electrode 4. Finally, the element supporter 5 laminates an SiO2 made-protection film on the whole surfaces of the element 1 based on a magnetron type high rate sputtering process in an Ar sputtering device. The ratio of argon (Ar) atoms contained in the protection film is specified to be 0.2wt.% and over and 6.0wt.% and below. This construction makes it possible to prevent separations or the like between the heating resistor and the protection layer.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate having a thin film resistance element having a protective film made of an electrical insulator on a heating resistor, an ink jet head using the thin film resistance element, and an ink jet recording equipped with the ink jet head. Regarding the device.

[0002]

2. Description of the Related Art Thin film resistance elements are used in thermal heads used for thermal printing on thermal paper and ink jet recording heads used in the ink jet recording method in which ink is heated and foamed to eject the ink.

The thin-film resistance element as described above has a heating resistor for generating heat, and in many cases, the heating resistor is further provided on the heating resistor to prevent oxidation of the heating resistor and to improve wear resistance. A protective film is provided for some reason.

In particular, the ink jet recording method is capable of high-speed, high-density, high-definition and high-quality recording, and is suitable for colorization and compactness. The point that the part directly contacts the ink, that the cavitation due to the repetition of foaming and defoaming of the ink causes a large mechanical impact on the heat acting part, and that the heat acting part has an extremely high order of 10 ^-1 to 10 microseconds. Ink jet recording heads are required to have a high-performance protective film as compared with thermal heads because of the fact that they are exposed to ascent and descent of several hundred degrees in a short time. In the recent technology, as a protective film for an inkjet head, SiO ₂ , S, etc. are formed on a heating resistor.
It is general to use an electrically insulating layer made of iC, Si ₃ N ₄ or the like, or an electrically insulating layer further laminated with a cavitation resistant layer made of Ta or the like.

[0005]

In a thin film resistance element having such a protective film, the protective performance of the protective film and its sustained stability dominate the durability of the element. A major technical issue is whether to form a reliable protective film.

However, even if the thin film resistance element as described above is made of the same material and the same structure, depending on the film forming method, the thin film resistance element may be provided on the upper part of the heating resistor, especially when repeatedly energized. In some cases, defective products in which a certain protective film is likely to swell or peel off frequently. In a thin film resistance element having such a defect, thermal contact with the protective film is cut off, and the resistance element is melted, or when used in an inkjet head, heat conduction to ink is deteriorated and ink is ejected. It had a problem to be solved that it would disappear.

The present invention has been made in view of the cause of the above problems, and has a highly reliable thin film resistance element. A substrate having this resistance element, an ink jet head using the thin film resistance element, and an ink jet head therefor are mounted. It is an object of the present invention to provide an inkjet recording device having the above structure.

[0008]

The main constitution of the present invention for attaining such an object is to have a protective film of an electric insulator in contact with a heating resistor, and the argon (Ar) contained in this protective film. ) Atom ratio is 0.2 wt% or more and 6.0 wt
% Or less, or in such a thin film resistance element, the protective film has a multi-layered structure, and the lower region of the protective layer on the side in contact with the heating resistor contains argon. The ratio of (Ar) atoms is
The substrate has a thin film resistance element of 0.2 wt% or more and 0.6 wt% or less and the upper region of 1.0 wt% or more and 6.0 wt% or less.

Alternatively, there is provided a method of manufacturing such a thin film resistance element, an inkjet head using the substrate having the thin film resistance element, an inkjet device or a thin film resistance element.

By adopting such a structure, it is possible to prevent the heat generating resistor and the protective layer from peeling off, the yield is high at the time of manufacture, the service life is long at the time of use, and the thin film resistance element is highly reliable. A substrate having an inkjet head,
An inkjet device can be obtained.

[0011]

EXAMPLES The present invention will be described below, but before that, findings obtained by the present inventors through experiments will be described.

In order to achieve the above object, a defective product and a non-defective product were compared and examined, and the cause of the defective product was investigated. As a result, it was found that the former has a larger amount of Ar atoms contained in the protective film in the region in contact with the heating resistor than the latter. In the figure, the horizontal axis is the electron microanalyzer (EP
MA), the X-ray intensity ratio of the atomic species of the protective film material, the Ar content (wt%) in the protective film obtained by correcting the difference in atomic species, and the vertical axis indicates an abnormality in the thin film resistance element. It shows the relationship when the applied voltage when it appears. However, the vertical axis is an arbitrary unit in which the resistance value varies depending on the element.

In this experiment, the larger the amount of Ar atoms contained in the protective film in the region in contact with the heating resistor, the lower the withstand voltage of the thin film resistance element, and the smaller the amount of Ar atoms as in the thin film resistance element produced by the sputtering apparatus 5. It was found that many of them are not preferable for practical use.

On the other hand, a detailed explanation will be given later in the section of Experimental Examples, or a thin film resistance element in which the ratio of Ar atoms in the protective film is less than 0.2 wt% is composed of a protective film and a heating resistor in contact with the protective film. In general, the physical strain that contributes to the adhesiveness of the interface and the number of bonds for cross-linking the protective film and the resistance heating element are reduced, so that peeling tends to occur at the interface. Therefore, A
The ratio of r atoms is preferably 0.2 wt% or more, and a protective film forming method that does not use Ar, such as a vapor deposition method by resistance heating, is generally not preferable because Ar is not contained in the protective film. However, this is not the case when the adhesion between the protective film and the heating resistor can be secured by another method.

In the present invention, in order for the thin film resistance element to be a good product, it is generally better that the Ar content is 0.2 wt% or more. The smaller the Ar content, the better. When measured by EPMA, the ratio of Ar atoms contained in the protective film is 0.2 wt% or more,
6.0 wt% or less, desirably 0.2 wt% or more, 3.
0 wt% or less, more preferably 0.2 wt% or more, 1.
It was found to be 0 wt% or less.

The following means are available for satisfying the above Ar content condition.

1. During or after the formation of the protective film, the protective film is heated using a heater or an infrared lamp.

2. Irradiating with ionizing radiation during or after the formation of the protective film.

3. Change the conditions for forming the protective film.

When the means 1 is used, Ar atoms do not remain in the protective film during the formation of the protective film, and after the protective film is formed, Ar atoms obtain thermal energy and escape from the protective film. As a result, the amount of Ar atoms in the protective film can be reduced. This effect is generally seen at 400 ° C. or higher, and the higher the temperature, the greater the effect. Therefore, in order to reduce the Ar atoms in the protective film, it is desirable to raise the temperature of the heating resistor as high as possible. However, if the temperature is raised too high, the thin film may undergo cohesive deformation, especially as a wiring material. Care must be taken because the melting point of Al is relatively low at 660 ° C. From the above, the temperature of the heating resistor should be set to 4 during or after the formation of the protective film.
It is desirable that the temperature is from 00 ° C to 600 ° C. However, this is not particularly the case when a thin film resistance element is made using a material that can withstand high temperatures.

The effect of the means 2 is that irradiation of ionizing radiation gives excitation energy to Ar atoms in the protective film, thereby
It is to help the atoms escape out of the protective film.

Regarding the means 3, for example, when the protective film is formed by sputtering, there is a method of changing the film forming conditions or the film forming apparatus to reduce the amount of Ar mixed in the protective film.

In the above description, it was described that the Ar content required for the protective layer in contact with the heating resistor was examined.

However, the inventor also obtained the following knowledge.

In the case of a structure in which a protective layer (second protective layer) is further laminated on the protective layer (first protective layer) provided in contact with the heating resistor, the second protective layer of the first protective layer is formed. If the Ar content in the vicinity of the bonding surface with the protective layer (hereinafter referred to as the upper part) is excessively reduced, then the physical strain on the surface of the first protective layer and the bonding hand will decrease, and the adhesion between the two will decrease. There is a risk of doing it.

Therefore, it was found that when the protective layer has a multi-layer structure, the Ar content should be determined in consideration of the adhesion between the protective layers.

In the present invention, in the case of a protective film having a multi-layered structure, 0.2 w is formed below the first protective layer (in the vicinity of the heating resistor).
It has been found that the Ar content is preferably t% or more and 6.0 wt% or less and 1.0 wt% or more and 9.0 wt% or less in the upper portion.

When the distribution of the amount of Ar in the protective film is made as described above, it is better to change the amount of Ar discontinuously in terms of ease of forming the protective film, but in terms of strength of the protective film. It is better to change the Ar amount continuously.

The present invention will be described in more detail below with reference to more specific examples. First, an example performed on a thin film resistance element when the protective film is a single layer will be described.

Embodiment 1 FIGS. 1 and 2 are a sectional view and a plan view, respectively, of a thin film resistance element according to Embodiment 1 of the present invention. Here, 1 is a thin film resistance element (entire), 2 is a heat generating portion, and 3 and 4 are electrodes.

The process of forming the thin film resistance element according to this embodiment will be described below.

First, a SiO ₂ film having a thickness of 5 μm was formed on the surface of a Si wafer which is the element support 5 by thermal oxidation to form a lower layer 6 of the element 1. A heating resistance layer 7 made of HfB ₂ was formed on the lower layer 6 by sputtering to have a thickness of 1300 Å.

Subsequently, a Ti layer of 50 Å and an Al layer of 5000 Å were successively deposited by electron beam evaporation to form a common wiring electrode 3 and a selection wiring electrode 4. At this time, a circuit pattern as shown in FIG. 2 is formed by a photolithography process, and the heat acting surface of the heat generating portion 2 of the heat generating portion 11 which generates heat by energizing the electrodes 3 and 4 has a size of 30 μm and a width of 150 μm. The length was set to 100 Ω including the resistances of the Al wiring electrodes 3 and 4.

Finally, the element support 5 was set in an Ar sputtering apparatus (No. 5 apparatus indicated by X in FIG. 10) by contacting it with a heater heated to 400 ° C. As shown in FIG. 1, a protective film 8 made of SiO ₂ having a thickness of 9 μm was laminated on the entire surface of the device 1 by a magnetron high rate sputtering method. In addition, A at that time
The r gas pressure was 4 mTorr and the Rf input electrode was 4.0 kW.

The element support 5 does not have to be Si, but may be an insulating material such as glass or ceramics. Since the heat generating portion 2 has a very high temperature when the heat generating portion 2 is energized, the heat generating resistance layer 7 is made of a material other than HfB ₂ such as a refractory metal or a transition material as long as it is a material that is stable at high temperature and has excellent oxidation resistance. Metal nitrides, carbides, silicides, borides and the like may be used, and tantalum nitride is preferably used. The wiring electrodes 3 and 4 are
Instead of Al, a good electric conductor such as Au or Cu can be formed. Further, the thickness of the protective film 8 and the width and length of the heat generating portion 2 may be appropriately selected according to the design of the thin film resistance element so that the heat generating portion 11 of the thin film resistance element can have the required characteristics. good. Further, regarding the protective film 8, Si
Besides O ₂ , it may be formed of SiC or SiN.

When the Ar content in the protective film of the thin film resistance element produced by the above method was measured using EPMA, it was found that the protective film contained 6.0 wt% Ar on average. all right.

A thin film resistance element prepared in the same manner has a thickness of 10 μm.
When a pulse voltage of sec, 3 kHz, 26 V is applied 5 × 10 ⁷ times (hereinafter referred to as condition 1) or 10 ⁸ times (hereinafter referred to as condition 2), an abnormality such as swelling of the protective film appears. Was 0%. In Comparative Example 1 which will be described later, when tested under the same conditions, about 45% of the elements are given a drive signal of 5 × 10 ⁷ times, and about 80% of the elements are given a drive signal of 1 × 10 ⁸ times. Since an abnormality appears, the amount of Ar in the protective film was made small in Example 1, so that the effect of the present invention that there is no element showing an abnormality that the protective film swells was observed.

Example 2 In Example 2 of the present invention, a thin film resistance element having the same structure as in Example 1 was produced. However, the conditions for forming the protective film 8 were different from those in Example 1, and the temperature of the heater with which the element support 5 was brought into contact was set to 600 ° C.

When the Ar content in the protective film of the thin film resistance element produced by the above method was measured using EPMA, it was found that the protective film contained 3.0 wt% Ar on average. all right.

A thin film resistance element prepared in the same manner has a thickness of 10 μm.
When a pulse voltage of 26 V for sec, 3 kHz was applied under the first condition and the second condition described above, the rate of occurrence of abnormality such as swelling of the protective film was 0% in both conditions. In Example 2 as well, since the protective film was formed so as to have a small Ar content, the effect of the present invention that the number of elements exhibiting an abnormality such as swelling of the protective film was reduced was observed.

Example 3 In Example 3 of the present invention, a thin film resistance element having the same structure as in Example 1 was produced. However, the sputtering apparatus used when forming the protective film 8 was different from that of Example 1 and Example 2 in that No. indicated by a circle in FIG. No. 1 Ar sputtering device was used, and the heater was not heated.
The gas pressure was 3 mTorr and the Rf input power was 8.0 kW.

When the Ar content in the protective film of the thin film resistance element produced by the above method was measured using EPMA, it was found that the protective film contained 1.0 wt% Ar on average. all right.

A thin film resistance element prepared in the same manner has a thickness of 10 μm.
When a pulse voltage of 26 V for sec, 3 kHz was applied under the first condition and the second condition described above, the rate of occurrence of abnormality such as swelling of the protective film was 0% in both conditions. In Example 3 as well, since the Ar film was formed so that the amount of Ar in the protective film was small, the effect of the present invention that the number of elements exhibiting an abnormality such as swelling of the protective film was reduced was observed.

Example 4 In Example 4 of the present invention, a thin film resistance element having the same structure as in Example 1 was produced. However, the conditions for forming the protective film 8 are almost the same as in Example 3, but the heater is 600
The protective film 8 was created by heating to a temperature of ° C.

When the Ar content in the protective film of the thin film resistance element produced by the above method was measured using EPMA, it was found that the protective film contained 0.2 wt% Ar on average. all right.

A thin film resistance element prepared in the same manner has a thickness of 10 μm.
When a pulse voltage of 26 V for sec, 3 kHz was applied under the first condition and the second condition described above, the rate of occurrence of abnormality such as swelling of the protective film was 0% in both conditions. Also in Example 4, since the protective film was formed so that the amount of Ar was small, the effect of the present invention that the number of elements exhibiting an abnormality such as swelling of the protective film was reduced was observed.

Example 5 In Example 5 of the present invention, a thin film resistance element having the same structure as that of Example 1 was produced. However, the conditions for forming the protective film 8 were different from those in Example 1, and the heater for contacting the element support 5 was not heated. Then, after the film formation, the temperature was set to 600 ° C. in N _{2 and} baking was performed for 1 hour.

When the Ar content in the protective film of the thin film resistance element manufactured by the above method was measured by using EPMA, it was found that the protective film contained 1.0 wt% of Ar on average. all right.

A thin film resistance element prepared in the same manner has a thickness of 10 μm.
When a pulse voltage of 26 V for sec, 3 kHz was applied under the first condition and the second condition described above, the rate of occurrence of abnormality such as swelling of the protective film was 0% in both conditions. In Example 5 as well, since the protective film was formed so that the amount of Ar was small, the effect of the present invention that the number of elements exhibiting an abnormality such as swelling of the protective film was reduced.

Example 6 In this example, a thin film resistance element having the same structure as in Example 1 was produced. The conditions for forming the protective film 8 are almost the same as in Example 1, but the heater temperature is slightly increased.

When the Ar content of the resistance element manufactured by the above method was measured as described above, it was found that the protective film contained 5.0% of Ar on average.

A thin film resistance element prepared in the same manner has a thickness of 10 μm.
When a pulse voltage of 26 V for sec, 3 kHz was applied under the first condition and the second condition described above, the rate of occurrence of abnormality such as swelling of the protective film was 0% in both conditions. In Example 5 as well, since the protective film was formed so that the amount of Ar was small, the effect of the present invention that the number of elements exhibiting an abnormality such as swelling of the protective film was reduced.

Example 7 In this example, a thin film resistance element having the same structure as in Example 1 was produced. Regarding the conditions for forming the protective film 8, Example 1
However, the heater temperature was made higher than in Example 6 above.

When the Ar content of the resistance element manufactured by the above method was measured as described above, it was found that the protective film contained 4.0% Ar on average.

A thin film resistance element prepared in the same manner has a thickness of 10 μm.
When a pulse voltage of 26 V for sec, 3 kHz was applied under the first condition and the second condition described above, the rate of occurrence of abnormality such as swelling of the protective film was 0% in both conditions. In Example 5 as well, since the protective film was formed so that the amount of Ar was small, the effect of the present invention that the number of elements exhibiting an abnormality such as swelling of the protective film was reduced.

Example 8 In this example, a thin film resistance element having the same structure as in Example 1 was produced. The conditions for forming the protective film 8 are almost the same as in Example 2, but the heater temperature is slightly increased.

When the Ar content of the resistance element produced by the above method was measured as described above, it was found that the protective film contained 2.0% Ar on average.

A thin film resistance element prepared in the same manner has a thickness of 10 μm.
When a pulse voltage of 26 V for sec, 3 kHz was applied under the first condition and the second condition described above, the rate of occurrence of abnormality such as swelling of the protective film was 0% in both conditions. In Example 5 as well, since the protective film was formed so that the amount of Ar was small, the effect of the present invention that the number of elements exhibiting an abnormality such as swelling of the protective film was reduced.

Comparative Example 1 In Comparative Example 1 with respect to Examples 1 to 8 of the present invention, a thin film resistance element having the same structure as that of Example 1 of the present invention was manufactured.
However, the conditions for forming the protective film 8 are the same as those in the first embodiment.
Unlike the above, the heater for contacting the element support 5 was not heated.

When the Ar content in the protective film of the thin film resistance element produced by the above method was measured using EPMA, it was found that the protective film contained Ar in an average of 7.0 wt%. all right.

A thin film resistance element prepared in the same manner has a thickness of 10 μm.
When a pulse voltage of sec, 3 kHz, 26 V is applied under the first condition and the second condition described above, the rate of occurrence of abnormality such as swelling of the protective film is 45% under the first condition and 80% under the second condition. Met.

Comparative Example 2 In Comparative Example 2, a thin film resistance element having the same structure as in Example 1 of the present invention was manufactured. However, regarding the conditions for forming the protective film 8, the heating temperature of the heater was further raised as compared with the case of Example 4.

When the Ar content in the protective film of the thin film resistance element produced by the above method was measured using EPMA, it was found that the protective film contained 0.1 wt% of Ar on average. all right.

Similarly, when applied under the above-mentioned first condition and second condition, no abnormal swelling of the protective film occurred.

However, when an adhesive tape was attached on the protective film and a peel test was performed, film peeling easily occurred.

Comparative Example 3 In Comparative Example 3, a thin film resistance element having the same structure as in Example 1 of the present invention was prepared. However, when the protective film 8 was formed, the film was formed so that Ar gas did not enter the film forming chamber, and heat treatment was performed with a heater.

When the Ar content in the protective film of the thin film resistance element produced by the above method was measured using EPMA, the protective film did not substantially contain Ar.

When a peel test was conducted in the same manner as in Comparative Example 2 above, film peeling easily occurred.

It is considered that, in Comparative Examples 2 and 3, the Ar content was too low, so that the adhesion to the heating resistance layer deteriorated.

The embodiment of the thin film resistance element having a single protective film has been described above. Next, the embodiment of the liquid jet head using the thin film resistance element of the present invention will be described.

Embodiment 9 FIG. 3 is a perspective view of a part of an ink jet recording head IJH using the thin film resistance element of the present embodiment and a sectional view of the vicinity of the thin film resistance element, and FIG. 7 is an ink jet in which the ink jet recording head IJH is incorporated. It is a structure explanatory view of a cartridge IJC. Further, FIG. 8 shows an ink jet cartridge IJC as an ink jet recording apparatus IJ shown in FIG.
It is a figure which shows a mode that it was attached to the carriage HC of RA.

The process of forming the thin film resistance element according to this embodiment will be described below with reference to FIGS. 3 and 7 to 9.

First, a thin film resistance element prepared in the same manner as in Example 1 was prepared.

3A and 3B on the thin film resistance element 1.
As shown in FIG. 3, a photosensitive resin dry film 12 having a thickness of 50 μm is laminated and exposed and developed by a predetermined pattern mask to form a liquid flow path 13 and a common liquid chamber 14, and the film is further formed. An ink jet recording head IJH was prepared by adhesively laminating a glass ceiling plate 15 on 12 via an epoxy adhesive. In addition, 16 is an ejection port, 17 is an ink flow path wall, and 18 is an ink supply port.

The first protective film 8 of the thin film resistance element 1 formed here is formed by using the element as an ink jet recording head IJ.
When H is produced, it has a function of preventing the portions of the electrodes 3 and 4 and the heat generation resistance layer 7 located immediately below the liquid flow path 13 from coming into contact with ink, and is made of SiO ₂ , SiC, SiN or the like. Can be formed.

The photosensitive dry film 12 can be made of a material selected from organic insulators such as epoxy resin, polyimide resin, phenol resin, etc., which are excellent in liquid permeation prevention and liquid resistance. By forming it, the ejection unit for ejecting the ink, including the ejection port 16, the liquid flow path 13, and the heat generating portion 11 of the heating resistance layer 7, is multi-layered.

The ceiling plate 15 is a portion corresponding to the ceiling of the liquid flow path 13 in each discharge unit, and can be formed of a metal plate, ceramic, plastic or the like other than glass.

The photosensitive dry film 12 and the ceiling plate 15 can be joined by using an adhesive such as an epoxy resin or a cyanoacrylate resin.

In this ink jet recording head IJH, HfB ₂ which is a compound having high resistance and excellent stability at high temperature is used for the heat generating resistance layer 7, so that the recording head meets the requirements of high density recording and high speed recording. Have a configuration that can deal with the situation.

The structure of the recording head of the present invention is not limited to the above-mentioned example, and various structures can be adopted.
For example, the illustrated recording head has a configuration in which the direction in which the liquid is supplied to the heat generating portion and the direction in which the liquid is ejected from the ejection port are substantially the same, but these directions are different.
For example, you may have a structure which becomes substantially right angle.

As shown in FIG. 7, the ink jet recording head IJH produced by the above-mentioned method is taken in the jet cartridge IJC integrated with the ink tank IT,
Further, as shown in FIG. 8, the ink jet recording apparatus IJRA shown in FIG. 9 was assembled by assembling the carriage HC.

The configuration of the ink jet recording apparatus will be briefly described below.

The ink jet unit IJU is a bubble jet type unit for recording by using an electrothermal converter which generates thermal energy for causing film boiling to the ink in response to an electric signal.

In FIG. 7, reference numeral 19 denotes a wiring substrate for the thin film resistance element 1, which corresponds to the wiring of the element (for example, is connected by wire bonding) and is located at the end of this wiring and the main body device. Pad 20 for receiving an electric signal from

Reference numeral 21 denotes a support body made of, for example, a metal, which supports the back surface of the wiring board 19 on a flat surface.
It will be the bottom plate of JU. Reference numeral 22 is a holding spring, which is M-shaped and presses the common liquid chamber 14 with a light pressure at the center of the M-shape, and linearly presses a part of the liquid passage, preferably a region in the vicinity of the discharge port 16, by the front droop 23. Press to concentrate. By pressing the thin film resistance element 1 and the ceiling plate 15 through the holes 24 of the bottom plate 21 and engaging with the back surface side of the bottom plate 21 by engaging the legs of the thin film resistance element 1 and the ceiling plate 15 with each other, the pressing spring is pressed. The thin film resistance element and the ceiling plate 15 are pressure-bonded and fixed by the concentrated urging force of 22 and the front slant portion 23.

The bottom plate 21 is also provided with positioning holes 26 and 2 for engaging with the two positioning projections 25 and the positioning and heat-fusion holding projections 27 and 28 (not shown) of the ink tank IT.
In addition to having 9, 30, the carriage H of the device body IJRA
It has projections 31 and 32 for positioning with respect to C on the back surface side. In addition, the bottom plate 21 also has a hole 34 that allows the ink supply pipe 33 that allows the ink supply from the ink tank IT to pass therethrough. Wiring board 19 for bottom plate 21
The attachment is done by adhering with an adhesive or the like. The bottom plate 2
The concave portions 35, 35 of the first reference numeral 31 are positioning protrusions 31, 3 respectively.
In the assembled inkjet cartridge IJC, which is provided in the vicinity of 2, there is no need for dust, ink, etc. at the extension point of the head tip region formed by the plurality of parallel grooves 36, 37 on the three sides of the periphery thereof. Things are protrusions 31, 32
It is located so as not to reach. This parallel groove 36
As shown in FIG. 7, the lid member 38 on which the ink is formed forms the outer wall of the ink jet cartridge IJC, and the ink tank IT and the ink jet unit IJC.
A space for accommodating U is formed. Further, the ink supply member 39 in which the parallel groove 37 is formed has an ink conduit 40 continuous with the ink supply pipe 33 described above.
3 side is formed as a fixed cantilever, and the ink conduit 40
A sealing pin 41 is inserted to secure the capillarity between the fixed side and the ink supply tube 33. Incidentally, 42 is a packing for connecting and sealing the ink tank IT and the supply pipe 33, and 43 is a filter provided at the end of the supply pipe on the tank side.

Since the ink supply member 39 is molded, the ink supply member 39 is inexpensive, has a high positional accuracy, and eliminates a decrease in accuracy in forming and manufacturing. In addition, the cantilevered conduit 40 allows the ink supplying member 39 to be used for mass production. The pressure contact state of 40 with respect to the ink receiving port 18 can be stabilized. In this example, by simply pouring the sealing adhesive from the ink supply member side under this pressure contact state, a more complete communication state can be surely obtained. The bottom plate 21 of the ink supply member 39
In order to fix the bottom plate 21 to the holes 44 and 45 of the bottom plate 21, a pin (not shown) on the back surface side of the ink supply member 39 is projected through the holes 44 and 45 of the bottom plate 21, and the portion protruding to the back surface side of the bottom plate 21 is heated. It is easily done by fusing.
The slightly protruding region of the heat-sealed back surface is accommodated in the recess (not shown) in the side wall surface of the ink jet unit IJU mounting surface of the ink tank IT, so that the positioning surface of the unit IJU can be accurately obtained.

The ink tank IT is a cartridge IJC.
The main body 46 and the ink absorber 47 are attached to the cartridge main body 46.
Of the unit IJU, and a lid member 48 for sealing the unit IJU after it is inserted from the side surface opposite to the mounting surface.

Reference numeral 47 is an absorber for impregnating the ink, which is arranged in the cartridge body 46. Reference numeral 49 denotes a supply port for supplying ink to the unit IJU, and the unit is connected to the cartridge body 46.
It is also an injection port for impregnating the absorber 47 with ink by injecting ink from the supply port 49 in the step before the arrangement.

In this example, the ink can be supplied to the atmosphere communication port and this supply port, but the rib 50 in the main body 46 and the lid member for favorably supplying the ink from the ink absorber. Since the in-tank air existence region formed by the partial ribs 51 and 52 of 48 is formed continuously from the atmosphere communication port 53 side and is formed over the farthest corner region from the ink supply port 49, It is important that the relatively good and uniform ink supply to the absorber is performed from the supply port 49 side. Reference numeral 54 denotes a liquid repellent agent disposed inside the atmosphere communication port 53, which prevents ink from leaking from the atmosphere communication port 53. The atmosphere communication port is formed in a protruding shape, and the inside thereof is hollowed to form an atmospheric pressure supply space 55 for the ink absorber 47.

Reference numeral 56 is a tip brim of the ink tank IT, which is inserted in a hole of the front plate 100 of the carriage and is provided in case of an abnormal change such that the displacement of the ink tank becomes extremely bad. Reference numeral 101 denotes a retainer for the carriage, which is provided on a bar (not shown) of the carriage HC, and intrudes below the bar at a position where the cartridge IJC is pivotally mounted, and an undesired force from the positioning position acts upward. Even if it is a protective member for maintaining the mounted state. Reference numeral 57 denotes a slit provided on the upper surface of the cartridge IJC, which prevents the temperature rise of the unit IJU due to the heat generated from the head IJH, while preventing the unit IJU from rising.
It works to make the temperature distribution uniform over the entire environment, independent of the environment.

In the assembled shape of the ink supply member 39, the upper surface 58 forms a slit between the ink supply member 39 and the end 60 of the roof of the ink tank IT, and the lower surface 59 is below the ink tank IT. A slit similar to the above-mentioned slit is formed between the cover 38 and the head side end portion 61 of the thin plate member. The slits between the ink tank IT and the ink supply member 39 substantially perform the action of further promoting the heat dissipation of the slit 59, and even if there is unnecessary pressure applied to the tank IT, the slit is directly supplied to the member. Forcibly, it prevents the ink jet unit IJU from being affected.

In FIG. 8, a platen roller 200 guides the recording medium P from the lower side to the upper side of the drawing. The carriage HC moves along the platen roller 200, and is disposed on the front platen side of the carriage on the front plate 100 (thickness 2 mm) located on the front side of the inkjet cartridge IJC and on the pad 20 of the wiring board 19 of the cartridge IJC. A flexible sheet 103 having a corresponding pad 102, a support plate 104 for electrical connection holding a rubber pad sheet 103 for generating an elastic force for pressing the flexible sheet 103 against each pad 102 from the back side, and an inkjet cartridge IJC are recorded. A positioning hook 105 for fixing the position is provided. Front plate 10
Reference numeral 0 denotes the positioning protruding surface 106 of the bottom plate 21 of the cartridge.
The above-mentioned positioning protrusions 31 and 32 are provided in two, respectively, and receive a vertical force toward the protruding surface 106 after the mounting of the cartridge. For this reason, the reinforcing rib has a plurality of ribs (not shown) on the platen roller side of the front plate and directed in the direction of the vertical force. The rib also forms a head protection protrusion that protrudes slightly (about 0.1 mm) toward the platen roller from the front position L when the cartridge IJC is mounted. Support plate for electrical connection 1
No. 04 has a plurality of reinforcing ribs 107 in the vertical direction, not in the direction of the ribs, and the ratio of lateral projection from the platen side toward the hook 105 side is reduced. This also serves to incline the position when the cartridge is mounted as shown in the figure. Further, since the support plate 104 stabilizes the electrical contact state, the hook-side positioning surface 108 for exerting an acting force on the cartridge in a direction opposite to the acting direction of the two positioning protruding surfaces 106 on the cartridge is provided. 2 corresponding to the projecting surface 106, a pad contact area is formed between them, and the pad 10
The amount of deformation of the two-corresponding rubber sheet 103 with a bottom is uniquely defined. When the cartridge IJC is fixed to a position where the cartridge IJC can record, these positioning surfaces are printed on the wiring board 1.
9 is brought into contact with the surface of 9.

The hook 105 has an elongated hole that engages with the fixed shaft 109. The hook 105 is rotated counterclockwise from the position shown in the drawing using the moving space of the elongated hole, and then left along the platen roller 200. By moving to the side, the inkjet cartridge IJC is positioned with respect to the carriage HC. The hook 105 may be moved by any means, but it is preferable that it can be moved by a lever or the like. In any case, when the hook 105 rotates, the cartridge IJC moves to the platen roller side and moves to a position where the positioning protrusions 31 and 32 can contact the positioning surface 106 of the front plate.
When the hook surface 110 of 90 ° is brought into close contact with the 90 ° surface of the claw 62 of the cartridge IJC by the leftward movement of 5, the cartridge IJC is swung in the horizontal plane about the contact area between the positioning surfaces 31 and 106 and finally. Pads 20, 10
Contact between the two begins. When the hook 105 is held at a predetermined position, that is, a fixed position, the pads 20, 1
02 complete contact state and positioning surfaces 31, 106
The complete surface contact between them, the double contact between the 90-degree surface 110 and the 90-degree surface of the claw, and the surface contact between the wiring board 19 and the positioning surface 108 are simultaneously formed, and the holding of the cartridge IJC with respect to the carriage is completed.

FIG. 9 is a schematic view of an ink jet recording apparatus IJRA to which the present invention is applied. The spiral groove of the lead screw 204 that rotates via the driving force transmission gears 209 and 211 in conjunction with the forward / reverse rotation of the driving motor 213. The carriage HC that engages with 205 is reciprocated in the directions of arrows a and b. A paper pressing plate 202 presses the paper against the platen 200 in the carriage movement direction. Two
Reference numerals 07 and 208 denote photocouplers, which are the levers 20 of the carriage.
6 is a home position detecting means for confirming the presence of 6 in this region and switching the rotation direction of the motor 213.
Reference numeral 216 is a member that supports a cap member 222 that caps the front surface of the recording head. Reference numeral 215 is a suction unit that absorbs the inside of the cap and performs suction recovery of the recording head through the cap internal opening 223. Reference numeral 217 is a cleaning blade, and 219 is a member that allows the blade to move in the front-rear direction, and these are supported by the main body support plate 218. Needless to say, a well-known cleaning blade can be applied to this example instead of this form. Reference numeral 212 denotes a lever for starting suction for suction recovery, which moves with the movement of the cam 220 engaging with the carriage, and the driving force from the drive motor is moved by a known transmission means such as clutch switching. Controlled.

The capping, cleaning, and suction recovery are performed so that desired processing can be performed at their corresponding positions by the action of the lead screw 204 when the carriage comes to the home position side area.
Any of these can be applied to the present example as long as a desired operation is performed at a known timing. The above-described respective configurations are excellent configurations either individually or in combination, and show preferable configuration examples for the present invention.

The first of the thin film resistance elements prepared by the above method
When the Ar content in the protective film was measured using EPMA, it was 6 wt% on average as in Example 1.

Further, by using the ink jet recording apparatus using the thin film resistance element produced by the above method, 5 × 10 ⁷ electric pulses (condition 1) and 10 times were applied to the thin film resistance element.
Recording was performed as if an electric pulse (condition 2) was applied ^eight times (driving condition 10 μsec, 1 kHz, 26 V).
The error occurrence rate was examined for 0 thin film resistance elements. However, the carriage HC and the inkjet recording device IJRA
The same main body was used, and only the inkjet cartridge IJC was replaced. As a result, 0% of the thin film resistance elements showed an abnormality that the protective film swelled. That is, the abnormality occurrence rate was 0% in both conditions.
In Comparative Example 2 which will be described later, when the test is performed under the same conditions, the abnormal occurrence rate is 55% under the condition 1 and 85% under the condition 2, so that in the ninth example, the Ar amount in the protective film is Since the number of the protective films was reduced, the effect of the present invention was observed that the abnormal occurrence rate of the protective film was lowered, that is, the reliability of the inkjet cartridge was increased.

Supplementing the present invention, the present invention brings excellent effects particularly in a bubble jet type recording head and a recording apparatus of the ink jet recording type.

With regard to its typical structure and principle, see, for example, US Pat. Nos. 4,723,129 and 4740.
What is done using the basic principles disclosed in 796 is preferred. This method is a so-called on-demand type,
It is applicable to both continuous type P,
In particular, in the case of the on-demand type, the electrothermal converter arranged corresponding to the sheet or the liquid path holding the liquid (ink) corresponds to the recorded information and rapidly exceeds the nucleate boiling. By applying at least one drive signal that gives rise to a temperature rise, heat energy is generated in the electrothermal converter, causing film boiling on the heat-acting surface of the recording head, resulting in a one-to-one correspondence with this drive signal. This is effective because bubbles can be formed in the liquid (ink). The liquid (ink) is ejected through the ejection opening due to the growth and contraction of the bubbles to form at least one droplet. It is more preferable to make this drive signal into a pulse shape, because the bubble growth and contraction are immediately and appropriately performed, so that the ejection of the liquid (ink) with excellent responsiveness can be achieved. This pulse-shaped drive signal is disclosed in U.S. Pat. No. 4,463,359 and No. 43.
Those as described in 45262 are suitable. If the conditions described in US Pat. No. 4,313,124 of the invention relating to the rate of temperature rise on the heat acting surface are adopted, more excellent recording can be performed.

As the constitution of the recording head, in addition to the combination constitution of the discharge port, the liquid passage, and the electrothermal converter (the linear liquid passage or the right-angled liquid passage) as disclosed in the above-mentioned respective specifications, U.S. Pat. No. 4,558,333, U.S. Pat. No. 445, which discloses a configuration in which the heat-acting portion is arranged in a bending region.
A configuration using the specification of No. 9600 is also included in the present invention. In addition, Japanese Unexamined Patent Publication No. 59-123670 discloses a configuration in which a common slit is used as a discharge portion of the electrothermal converter for a plurality of electrothermal converters, and an opening for absorbing a pressure wave of thermal energy is provided. The present invention is also effective as a configuration based on Japanese Patent Application Laid-Open No. 59-138461, which discloses a configuration corresponding to a discharge unit.

Further, as a full line type recording head having a length corresponding to the width of the maximum recording medium which can be recorded by the recording device, a combination of a plurality of recording heads as disclosed in the above-mentioned specification is used. Although the structure may be one that satisfies the length or one recording head integrally formed, the present invention can more effectively exhibit the above-described effects.

In addition, by being attached to the apparatus main body, it can be electrically connected to the apparatus main body and can be supplied with ink from the apparatus main body by a replaceable chip type recording head or the recording head itself. The present invention is also effective when a cartridge-type recording head that is specially provided is used.

Further, it is preferable to add recovery means for the recording head, preliminary auxiliary means, etc., which are provided as a configuration of the recording apparatus of the present invention, because the effects of the present invention can be further stabilized. If you list these specifically,
Capping means, cleaning means, pressurization or suction means, electrothermal converter or other heating element or preheating means by a combination thereof, and ejection different from recording are applied to the recording head. Performing the preliminary ejection mode is also effective for stable recording.

Further, the recording mode of the recording apparatus is not limited to the recording mode of only the mainstream color such as black, but the recording head may be integrally formed or a plurality of combinations may be used. The present invention is also extremely effective for an apparatus provided with at least one of full color by color mixing.

Example 10 In Example 10 of the present invention, a thin film resistance element having the same structure as that of Example 9 was prepared, and 20 ink jet cartridges IJC having the same configuration as that of Example 9 were prepared using the thin film resistance element. . However, the conditions for forming the protective film 8 are as follows:
The conditions are the same as those for forming the protective film 8 in FIG. 1 Ar sputtering device,
The heater is not heated, the Ar gas pressure is 3 mTorr, Rf
The input power was 8.0 kW.

The first of the thin film resistance elements prepared by the above method
When the Ar content in the protective film was measured using EPMA, it was 1.0 wt% on average as in Example 3.

Further, with respect to the 20 ink jet cartridges IJC prepared by the above method, the ink jet recording apparatus IJRA used in Example 9 was used to apply the electric pulse of the above condition 1 and condition 2 to the thin film resistance element. The same recording as that of the addition is performed, and the driving condition is 10 μse.
(c, 1 kHz, 26 V) The abnormality occurrence rate of the thin film resistance element of each cartridge was examined. As a result, it was 0% in both conditions that the protective film swelled in the thin film resistance element. Also in Example 10, Ar in the protective film
I made it so that the amount would be small. The effect of the present invention is that the abnormality occurrence rate of the protective film is lowered, that is, the reliability of the inkjet cartridge is increased.

Comparative Example 4 In Comparative Example 2 with respect to Examples 9 and 10 of the present invention,
A thin film resistance element having the same structure as that of Example 9 was prepared, and 20 inkjet cartridges IJC having the same configuration as that of Example 9 were prepared using the thin film resistance element. However, the conditions for forming the first protective film 8 are the same as the conditions for forming the protective film 8 in Comparative Example 1, and the No. indicated by X in FIG. 5 Ar sputtering device was used, and the heater was not heated,
Ar gas pressure is 4 mTorr, Rf input power is 4.0 kW
And

The first of the thin film resistance elements prepared by the above method
When the Ar content in the protective film was measured using EPMA, it was 7.0 wt% on average as in Comparative Example 1.

Further, with respect to the 20 ink jet cartridges IJC prepared by the above method, the ink jet recording apparatus IJRA used in Example 9 was used and 10 ⁸ electric pulses were applied to the thin film resistance elements. Equal recording is performed (driving condition 10 μsec, 1 kHz, 2
6V) The abnormality occurrence rate of the thin film resistance element of each cartridge was examined. As a result, in the thin-film resistance element, the abnormality that the protective film swelled was 55 under the above condition 1.
% And 85% under the condition 2.

The above Examples 1 to 10 and Comparative Example 1
The results of ~ 2 are shown in FIG.

In addition, each of the above-described Examples and Comparative Examples 1 and 4
A pulse having a pulse width of 30 V and a pulse width of 3.0 μsec is applied to each of the thin film resistance element and the ink jet head having the thin film resistance element prepared in Section 3 at a driving frequency of 3.0 kHz.
FIG. 12 shows a value obtained by comparing the number of pulses until the thin film resistance element is broken when the voltage is applied with reference to the number of pulses in Comparative Example 1 as a reference.

From the above results, Ar% in the protective film in contact with the heat generating portion of the heat generating resistance layer of the thin film resistance element and the thin film resistance element used in the ink jet head of the present invention is 0.2 wt.
% To 6.0 wt%, more preferably 0.2 wt% to 30
wt%, more preferably 0.2 wt% to 1.0 wt%
Is.

The embodiments in which the protective film provided on the heating portion of the heating resistance layer is a single layer have been described above.

However, examples of a multilayer protective film in which protection is further laminated on the protective film as described above will be described in the following examples.

Embodiment 11 FIG. 4 is a plan view (a) and a sectional view (b) of a thin film resistance element according to Embodiment 8 of the present invention. Here, 1 is an element (entire), 2 is a heat generating portion, and 3 and 4 are wiring electrodes.

The process of manufacturing the thin film resistance element according to this embodiment will be described below.

First, a SiO ₂ film having a thickness of 5 μm was formed on the surface of the Si wafer which is the element support 5 by thermal oxidation to form the lower layer 6 of the element 1. A heating resistance layer 7 made of HfB ₂ was formed on the lower layer 6 by sputtering to have a thickness of 1300 Å.

Subsequently, a Ti layer of 50 Å and an Al layer of 5000 Å were successively deposited by electron beam evaporation to form a common wiring electrode 3 and a selection wiring electrode 4. At this time, a circuit pattern as shown in FIG. 5 is formed by a photolithography process, and the heat acting surface of the heat generating portion 2 of the heat generating portion 11 that generates heat by energizing the wiring electrodes 3 and 4 has a dimension of 30 μm width. The length was 150 μm, and the resistance value was 100Ω including the resistances of the Al wiring electrodes 3 and 4.

Next, the first protective film 8 was formed in two steps. First, as the first step, the element support 5 was set by connecting a heater heated to 400 ° C. in an Ar sputtering apparatus (No. 5 apparatus indicated by X in FIG. 10) to have a thickness of 1. A first lower protective film 8 made of 0 μm SiO ₂ was laminated on the entire surface of the device 1 by a magnetron type high rate sputtering method as shown in FIG. The Ar gas pressure at that time was 4 mTorr, and the Rf input power was 4.0 kW. Next, as a second step, an Ar sputtering device (No. 5 device indicated by X in FIG. 10)
Then, the first upper protective film 8 made of SiO ₂ and having a thickness of 1.0 μm was formed thereon without heating the substrate. In addition, A at that time
The r gas pressure was 4 mTorr and the Rf input power was 2.0 kW. Next, as the second upper protective layer 10, Ta is 0.
It was laminated to a thickness of 5 μm by a magnetron high rate sputtering method. Next, the second protective layer 10 was formed by a photolithography process in a pattern covering the upper portion of the heat generating portion 2 as shown in FIGS. The element support 5 does not necessarily need to be Si, but may be an insulator such as glass or ceramics. Heating resistance layer 7
Is a material other than HfB _{2 as} long as it is a material that is stable at high temperature and has excellent oxidation resistance, for example, a high melting point metal or a transition metal nitride. Carbides, silicides, borides, etc. may be used. The wiring electrodes 3 and 4 are not Al but Au, C
It can also be formed of a good electric conductor such as u.

Regarding the film thickness of the protective film 8 and the width and length of the heat generating portion 2, the heat generating portion 11 of the thin film resistance element can be provided with necessary characteristics according to the design of the thin film resistance element. Just select it. Furthermore, regarding the protective film 8,
Instead of SiO ₂ , it is also possible to form it from SiC or SiN.

When the Ar content in the protective film of the thin film resistance element formed by the above method was measured by using EPMA, the average thickness of the film formed as the lower protective film of the first protective film 8 was 6 wt. %, The film formed as the upper protective film contained 9 wt% of Ar on average.

The thin-film resistance element produced by the above method has 10
When a pulse voltage of μsec, 3 kHz was applied 5 × 10 ⁷ times (condition 1) and 10 ⁸ times (condition 2), the rate of occurrence of abnormality such as swelling of the protective film was 0% in both conditions.

Example 12 In Example 12 of the present invention, a thin film resistance element having the same structure as that of Example 11 was produced. However, the conditions for forming the first protective film 8 were different from those in Example 11, and the element support 5 was placed in an Ar sputtering apparatus (No. 5 apparatus indicated by X in FIG. 10) as the first step. , Contact with a heater heated to 400 ℃, and set Si with a thickness of 1.0 μm.
A first lower protective film 8 made of O ₂ was laminated on the entire surface of the device 1 by a magnetron high rate sputtering method as shown in FIG. The Ar gas pressure at that time was 4 m.
The input power of Torr and Rf was set to 4.0 kW. Second
As a step, the substrate was not heated by an Ar sputtering device (No. 1 device indicated by a circle in FIG. 10) to a thickness of 1.
A first upper protective film 8 made of 0 μm SiO ₂ was formed on the upper surface. The Ar gas pressure at that time was 3 mTorr, R
f The input power was set to 8.0 kW. Regarding the thin film resistance element produced by the above method, EPMA was used to
When the content was measured, the film formed as the lower protective film of the first protective film 8 was 6.0 wt% on average, and the first upper protective film formed as the second step was 1 on average. .0w
It was found to contain t% Ar.

The thin-film resistance element manufactured by the above method has 10
When a pulse voltage of μsec, 3 kHz was applied in accordance with the above conditions 1 and 2, the rate of occurrence of abnormality such as swelling of the protective film was 0%.

Example 13 In Example 13 of the present invention, a thin film resistance element having the same structure as that of Example 11 was produced. However, the conditions for forming the first protective film 8 were different from those in Example 11, and the element support 5 was placed in the Ar sputtering apparatus (the No. 1 apparatus indicated by a circle in FIG. 10) as the first step. , Set the heater in contact with the heater heated to 600 ℃, 1.0μm thick S
The first lower protective layer 8 made of iO _2, over the entire surface of the element 1 as shown in FIG. 4 were laminated by magnetron high rate sputtering. The Ar gas pressure at that time was 3
The input power of mTorr and Rf was set to 8.0 kW, and then the second step was Ar sputtering equipment (the equipment of No. 5 shown by X in FIG. 10) without heating the substrate, and the thickness of SiO was 1.0 μm. _A first upper protective film 8 made of 2 was formed on top. The Ar gas pressure at that time was 4 mTorr.
The input power of r and Rf was set to 4.0 kW. When the Ar content in the protective film of the thin film resistance element produced by the above method was measured using EPMA, it was found that the film formed as the lower protective film of the first protective film 8 was 0.2 wt% on average. ,
The upper protective film formed as the second stage has an average of 9.0 w.
It was found to contain t% Ar. When a pulse voltage of 10 μsec, 3 kHz was applied to the thin film resistance element produced by the above method according to the above conditions 1 and 2,
The rate of occurrence of abnormalities such as swelling of the protective film was 0%.

Example 14 In Example 14 of the present invention, a thin film resistance element having the same structure as that of Example 11 was produced. However, the conditions for forming the first upper protective film 8 were different from those in Example 11, and the element supporting member 5 was changed to the Ar sputtering apparatus (see FIG. 10) in the first step.
No. indicated by a circle. 1) is set by contacting a heater heated to 600 ° C with a thickness of 1.0 μm.
The SiO ₂ protective film 8 was laminated on the entire surface of the device 1 by a magnetron high rate sputtering method as shown in FIG. The Ar gas pressure at that time was 3 mTo.
The input power of rr and Rf was set to 8.0 kW. Next, in the second step, the substrate was not heated by an Ar sputtering device (No. 1 device indicated by a circle in FIG. 10) to a thickness of 1.0 μm.
A protective film 8 made of m ₂ of SiO ₂ was formed thereon. In addition,
At that time, the Ar gas pressure was 3 mTorr, and the Rf input power was 8.0 kW. When the Ar content in the protective film was measured using EPMA for the thin film resistance element formed by the above method, the first protective film 8 formed as the first step (lower protective film) was averaged. 0.2 wt%, and the film formed as the second stage (upper protective film) is 1.0 on average
It was found to contain wt% Ar. When a pulse voltage of 10 μsec, 3 kHz was applied to the thin film resistance element produced by the above method in accordance with the conditions 1 and 2, the rate of occurrence of abnormality such as swelling of the protective film was 0%.

Comparative Example 5 In Comparative Example 5 with respect to Examples 11 to 14 of the present invention, a thin film resistance element having the same structure as that of Example 11 of the present invention was produced. However, unlike the first embodiment, the conditions for forming the first protective film 8 are not divided into two steps, and one condition
The film was formed by the device. The element support 5 was set in an Ar sputtering apparatus (No. 5 apparatus indicated by X in FIG. 10) so as not to heat, and a protective film 8 made of SiO ₂ having a thickness of 2.0 μm was formed. As shown in FIG. 4, it was laminated on the entire surface of the element 1 by a magnetron type high rate sputtering method. The Ar gas pressure at that time was 4 mTorr and Rf.
The input power was 4.0 kW.

When the Ar content in the protective film of the thin film resistance element produced by the above method was measured using EPMA, it was found that the protective film contained 7.0 wt% Ar on average. all right.

A thin film resistance element prepared in the same manner has a thickness of 10 μm.
When a pulse voltage of 3 kHz for 3 sec is applied under the conditions 1 and 2 described above, the rate of occurrence of abnormality of swelling of the protective film is 6
It was 0%. However, there was no peeling between the first protective film and the second protective film.

This is due to the Ar film on the side in contact with the heating resistance layer.
It is considered that this is because the content is too large.

Comparative Example 6 In Comparative Example 6, a thin film resistance element having the same structure as that of Example 11 of the present invention was manufactured. However, the conditions for forming the first protective film 8 were different from those in Example 11 and were not divided into two steps and were formed by one device under one condition. The element supporting member 5 is an Ar sputtering device (No. 1 device indicated by a circle in FIG. 10).
A heater heated to 600 ° C. is set in the inside to set the first protective film 8 made of SiO ₂ having a thickness of 2.0 μm.
Was laminated on the entire surface of the element 1 by the magnetron high rate sputtering method as shown in FIG. At that time, the Ar gas pressure was 3 mTorr, and the Rf input power was 8.0 k.
W.

When the Ar content in the protective film of the thin film resistance element produced by the above method was measured using EPMA, it was found that the protective film contained 0.2 wt% Ar on average. all right.

A thin film resistance element prepared in the same manner has a thickness of 10 μm.
When a pulse voltage of 3 sec for 3 sec was applied in accordance with the above-mentioned conditions 1 and 2, there was no abnormality of swelling of the protective film, but the protective film was peeled off between the first protective film and the second protective film. The rate that appeared in between was 50%.

Comparative Example 7 In Comparative Example 7, a thin film resistance element having the same structure as that of Example 11 of the present invention was manufactured. However, unlike the case of Example 11, the conditions for forming the first protective film 8 were not divided into two steps, and the film formation was performed with one condition and one apparatus. The element support 5 was set in an Ar sputtering device (No. 1 device indicated by a circle in FIG. 10) by bringing a heater heated to 500 ° C. into contact therewith, and was made of SiO ₂ having a thickness of 2.0 μm. The first protective film 8 was laminated on the entire surface of the element 1 by a magnetron high rate sputtering method as shown in FIG. In addition,
At that time, the Ar gas pressure was 3 mTorr, and the Rf input power was 8.0 kW.

When the Ar content in the protective film of the thin film resistance element produced by the above method was measured using EPMA, it was found that the protective film contained 0.9 wt% of Ar on average. all right.

A thin film resistance element prepared in the same manner has a thickness of 10 μm.
When a pulse voltage of 3 sec for 3 sec was applied in accordance with the above conditions 1 and 2, there was no abnormality in the protective film swelling.
The rate of peeling of the protective film between the first protective film and the second protective film was 20%.

Comparative Example 8 In Comparative Example 8 with respect to Examples 11 to 14 of the present invention, a thin film resistance element having the same structure as that of Example 11 of the present invention was produced. However, the conditions for forming the first protective film 8 were different from those in Example 11, and the element supporting member 5 was used as the first step in the Ar sputtering apparatus (No. 5 apparatus indicated by X in FIG. 10). Set it inside so that it will not heat up,
A protective film 8 made of SiO _{2 and having a} thickness of 1.0 μm was laminated on the entire surface of the element 1 by a magnetron high rate sputtering method as shown in FIG. The Ar gas pressure at that time was 4 mTorr, and the Rf input power was 4.0 kW. Next, as a second step, an Ar sputtering device (see FIG.
No. 0 indicated by X mark. No. 5, the protective film 8 made of SiO ₂ having a thickness of 1.0 μm was formed on the substrate without heating the substrate. The Ar gas pressure at that time was 15 mTorr.
The input power of r and Rf was set to 1.0 kW.

When the Ar content in the protective film of the thin film resistance element produced by the above method was measured using EPMA, it was formed as the first step of the first protective film 8 (lower protective film 8). Is 7.0 wt% on average, and the film formed as the second stage (upper protective film) is 10.0 on average.
It was found to contain wt% Ar.

A thin film resistance element prepared in the same manner has a thickness of 10 μm.
When a pulse voltage of 3 sec for 3 sec is applied according to conditions 1 and 2, the rate of swelling of the protective film under the condition 1 is 40%, and the rate of occurrence of abnormality such as swelling of the protective film under the condition 2 is 70%. It was However, the first upper protective film and the second
The rate of peeling between the protective films is about 5% under condition 1,
Under condition 2, it was about 10%.

Next, an embodiment of the ink jet head of the present invention in which the protective film has a multi-layer structure will be described.

Example 15 FIG. 5 is a plan view (a) and a sectional view (b) of a thin film resistance element of this example. Further, FIG. 6 is a cross-sectional view of a part of an ink jet recording head IJH using the thin film resistance element of the present embodiment in the vicinity of the thin film resistance element.

The constructions of the ink jet head, the ink jet cartridge and the ink jet apparatus are the same as those shown in FIGS. 7 to 9 and therefore will not be described here.

First, a thin film resistance element prepared in the same manner as in Example 11 of the present invention was prepared. Next, as the third upper protective film 9, a photosensitive polyimide (trade name: Photo Nice) is used.
Was applied on the first protective film 8 of the element 1, and a circuit pattern as shown in FIGS. 5A and 5B was formed by a photolithography process.

As shown in FIG. 6, a photosensitive resin dry film having a thickness of 50 μm is laminated on the thin-film resistance element 1 thus produced, and exposure and development are performed using a predetermined pattern mask, A liquid flow path 13 and a common liquid chamber were formed, and a glass ceiling plate 15 was adhesively laminated on the film 12 via an epoxy adhesive to form an inkjet recording head IJH. In addition, 16 is an ejection port, 17 is an ink flow path wall, and 18 is an ink supply port.

The first protective film 8 of the thin-film resistance element 1 formed here is formed by using the ink-jet recording head IJ.
When H is produced, it has a function of preventing the portions of the electrodes 3 and 4 and the heat generation resistance layer 7 located immediately below the liquid flow path 13 from coming into contact with ink, and is made of SiO ₂ , SiC, SiN or the like. Can be formed. The second protective film 10 is a cavitation resistant layer, and a metal thin film layer other than Ta can be used.

The photosensitive dry film 12 can be made of a material selected from organic insulating materials such as epoxy resin, polyimide resin, phenol resin, etc., which are excellent in liquid permeation prevention and liquid resistance. By forming it, the ejection unit for ejecting the ink, including the ejection port 16, the liquid flow path 13, and the heat generating portion 11 of the heating resistance layer 7, is multi-layered.

The ceiling plate 15 is a portion corresponding to the ceiling of the liquid flow path 13 in each discharge unit, and can be formed of a metal plate, ceramic, plastic or the like other than glass.

The photosensitive dry film 12 and the ceiling plate 15 can be joined by using an adhesive such as an epoxy resin or a cyanoacrylate resin.

In this ink jet recording head IJH, HfB ₂ which is a compound having high resistance and excellent stability at high temperature is used for the heating resistance layer 7, so that the recording head can meet the demands of high density recording and high speed recording. Have a configuration that can deal with the situation.

Further, the structure of the recording head of the present invention is not limited to the above-mentioned example, and various structures can be adopted.
For example, the illustrated recording head has a configuration in which the direction in which the liquid is supplied to the heat generating portion and the direction in which the liquid is ejected from the ejection port are substantially the same, but these directions are different.
For example, you may have a structure which becomes substantially right angle.

As shown in FIG. 7, the ink jet recording head IJH produced by the above-mentioned method is incorporated into a jet cartridge IJC integrated with an ink tank IT,
Further, as shown in FIG. 8, the ink jet recording apparatus IJRA shown in FIG. 9 was assembled by assembling the carriage HC.

The structure of the ink jet recording apparatus and the description with reference to FIGS. 7, 8 and 9 are the same as those described in the sixth embodiment.

The first of the thin film resistance elements prepared by the above method
The Ar content in the protective film was measured by using EPMA. As with the eleventh example, the first lower protective film, 6.0 wt% on average, was formed as the second stage. It was found that the upper protective film of No. 1 contained 9.0 wt% of Ar on average.

Using the ink jet recording apparatus using the thin film resistance element prepared by the above method, the thin film resistance element was subjected to 5 × 10 ⁷ times (condition 1) and 10 ⁸ times (condition 2).
Recording was performed in the same manner as when the electric pulse was applied, and the abnormality occurrence rate was examined for 20 thin film resistance elements (driving condition 10 μsec, 1 kHz, 26 V). However, the carriage HC and the main body of the inkjet recording apparatus IJRA used the same thing, and only the inkjet cartridge IJC was replaced. As a result, in both of the conditions, 0% of the thin-film resistance elements showed abnormalities such as swelling of the protective film and peeling between the first and second protective layers.

The present invention brings excellent effects particularly in a bubble jet type recording head and a recording apparatus of the ink jet recording type.

The typical structure and principle, the structure of the recording head, the addition of recovery means to the recording head, the addition of preliminary auxiliary means, and the recording mode of the recording apparatus have already been described in the sixth embodiment. Is the same as.

Examples 16 to 18 In Examples 16 to 18 of the present invention, an ink jet cartridge having the same structure as that of Example 15 was prepared by using the thin film resistance element having the same structure as that of Example 15. 20 IJCs were created. However, the conditions for forming the first protective film 8 are equal to the conditions for forming the protective film 8 in Examples 12 to 14, and Example 16 is Example 12 and Example 17 is Example 13 and Example. 18 was formed under the same conditions as in Example 14.

The first of the thin film resistance elements prepared by the above method
The Ar content in the protective film was measured using EPMA. As a result, Example 10 was Example 12 and Example 17 was Example 1.
3 and Example 18 showed the same value corresponding to Example 14.

Further, using the ink jet recording apparatus IJRA used in Example 15 for the twenty ink jet cartridges IJC produced by the above method,
Recording was performed in the same manner as applying an electric pulse according to the conditions 1 and 2 to the thin film resistance element (driving condition 10 μse
(c, 1 kHz, 26 V) The abnormality occurrence rate of the thin film resistance element of each cartridge was examined. As a result, in all of Example 16 to Example 18, the swelling of the protective film or the abnormality of the first and second protective layers in the thin film resistance element was 0% under both conditions.

Comparative Examples 9 to 10 Comparative Examples 9 and 1 to Examples 15 to 18 of the present invention
In No. 0, a thin film resistance element having the same structure as that of Example 15 was prepared, and 20 inkjet cartridges IJC having the same configuration as that of Example 15 were prepared using the thin film resistance element. However, the conditions for forming the first protective film 8 are the same as the conditions for forming the protective film 8 in Comparative Examples 5 to 8, Comparative Example 9 is Comparative Example 5, Comparative Example 10 is Comparative Example 6, and Comparative Example. No. 11 was formed under the same conditions as in Comparative Example 8.

The first of the thin film resistance elements prepared by the above method
When the Ar content in the protection was measured using EPMA, Comparative Example 9 showed the same value as Comparative Example 5, Comparative Example 10 had Comparative Example 6 and Comparative Example 11 had the same value as Comparative Example 8.

Further, with respect to the 20 ink jet cartridges IJC produced by the above method, the ink jet recording apparatus IJRA used in Example 6 was used, and 10 ⁸ electric pulses were applied to the thin film resistance elements. Equal recording is performed (driving condition 10 μsec, 1 kHz, 2
6V) The abnormality occurrence rate of the thin film resistance element of each cartridge was examined. As a result, in the thin film resistance element, the abnormality that the protective film swells was shown as follows: Condition 1 of Comparative Example 9: 30% Condition 2: 70%, Comparative Example 10: 0%, Condition 1 of Comparative Example 11 Was 60%, and under condition 2, it was 90%. Among them, the peeling between the first upper protective film and the second upper protective film was 0% in Comparative Example 9, 0% in Comparative Example 10 under Condition 1, 50% in Condition 2, and Comparative Example 11 Is condition 1
Was 5% and Condition 2 was 20%.

The experimental results of the above Examples 11 to 18 and Comparative Examples 5 to 11 are shown in FIG.

From the above results, when the protective layers are provided in multiple layers on the heating resistance layer, the amount of Ar contained in the lower part of the first protective film (the side in contact with the heating resistance layer) is related to the film swelling. 0.2 or more and 6.0 wt% or less, and the amount of Ar contained in the upper part of the first protective layer (the side in contact with the second protective layer) is 1.0 wt% or more and 9% from the viewpoint of film peeling. It is preferably 0.0 wt% or less.

Other Embodiments Next, the present inventors have found that when the protective film has a multi-layer structure,
An experiment was conducted to find out to what extent of the protective film the upper or lower part would give a good result.

Thin film resistance elements were prepared in the same manner as the thin film resistance elements prepared in Examples 11 and 13 described above. However, in order to change the lower and upper regions in the first protective film, the film forming time for forming the lower region and the upper region was adjusted, and respective materials were prepared.

The results are shown in FIG. In this example, Example 11 containing 6.0 wt% of Ar in the lower portion of the first protective film and 9.0 wt% in the upper portion, 0.2 wt% in the lower portion of the first protective film, and 9 in the upper portion of the first protective film. In Example 13 containing 0.0 wt% Ar, the ratio of the upper region and the lower region was changed as shown in FIG. 14 (11-
1-11-5 and 13-1-13-5).

From the above results, it is preferable that the ratio of the lower part of the first protective film is 40% or more (excluding 0 wt% in the upper region), and the ratio of the lower part is 50% or more (however, 0 wt% in the upper region). Is excluded) is more preferable.

This is because the problem of peeling from the first and second protective films is determined by the bonding state of the first protective layer in the vicinity of the joint surface with the second protective film, and the first protective film and the heat generating resistance layer are separated from each other. It is considered that the problem of swelling between the two is due to the fact that a certain lower region is required due to the influence of Ar diffusion.

[0172]

As described above, according to the present invention, an electron beam microanalyzer (E
The ratio of Ar atoms contained in the protective film forming the device is 0.2 wt% or more and 6.0 wt% as measured by PMA).
The ratio of Ar atoms contained in the lower region of the first protective film disposed immediately above the heating element of the protective film by the following method, or when the protective film has a multilayer structure, 0.2 w
t% or more and 6.0 wt% or less, and the upper region in the first protective film is made to be 1.0 wt% or more and 9.0 wt% or less to reduce the abnormality occurrence rate of the protective film. As a result, the reliability of the thin film resistance element can be improved, and the reliability of the inkjet head and the inkjet device using the element can be improved.

[Brief description of drawings]

FIG. 1 is a schematic sectional view illustrating a structure of a thin film resistance element of the present invention and a comparative example.

FIG. 2 is a schematic plan view illustrating a structure of a thin film resistance element of the present invention and a comparative example.

FIG. 3 is a partial perspective view of an ink jet head using the thin film resistance element of the present invention and a schematic sectional view of the thin film resistance element.

FIG. 4 is a schematic diagram illustrating a structure of a thin film resistance element of the present invention and a comparative example.

FIG. 5 is a schematic diagram illustrating a structure of a thin film resistance element of the present invention and a comparative example.

FIG. 6 is a diagram illustrating a configuration of an inkjet head of the present invention.

FIG. 7 is a structural explanatory view of an inkjet cartridge.

FIG. 8 is a diagram showing a state in which the inkjet cartridge is mounted on the carriage of the apparatus.

FIG. 9 is a diagram illustrating an entire inkjet device.

FIG. 10 is a diagram showing the relationship between the amount of Ar in the protective film of a thin film resistance element and the withstand voltage of the element.

FIG. 11 is a diagram showing the results of Examples 1 to 10 and Comparative Examples 1 to 4.

FIG. 12 is a diagram showing the relationship between the Ar content and the number of disconnection pulses in Examples 1 to 10 and Comparative Examples 1 and 4.

FIG. 13 is a diagram showing the results of Examples 11-18 and Comparative Examples 5-11.

FIG. 14 is a diagram for defining an upper region and a lower region in the first protective layer.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 thin film resistance element (whole) 2 heating part 3 common electrode 4 selection electrode 5 element support 6 lower layer 7 heating resistance layer 8 protective film (first protective film) 11 heat generating part 12 photosensitive dry film 13 liquid flow path 14 Common liquid chamber 15 Ceiling plate 16 Discharge port 17 Ink flow channel wall 18 Ink supply port 19 Wiring board 20 Pad 21 Inkjet unit IJU bottom plate 22 Presser spring 23 Presser spring front salient 24 Bottom plate 21 hole 25 Ink tank IT positioning protrusion 27, 28 Ink tank IT positioning and heat-fusion holding projections 26, 29, 30 Ink tank IT positioning and heat-fusion holding holes 31, 32 Positioning projection for carriage HC 33 Ink supply pipe 34 Ink supply pipe through hole 35 Recesses on Bottom Plate 21 36, 37 Parallel Grooves 38 Lid 39 Ink Supply Member 40 In Conduit 41 Sealing pin 42 Packing 43 Filter 44, 45 Hole in bottom plate 21 Inkjet cartridge IJC main body 47 Ink absorber 48 Lid member 49 Ink supply port 50 Rib 51, 52 Partial rib 53 Atmospheric communication port 54 Liquid repellent material 55 Atmospheric pressure Supply space 56 Flange 57 Slit 58 Upper surface of ink supply member 59 Lower surface of ink supply member 60 End of roof of ink tank IT 61 Side end of inkjet recording head IJH 62 Claw of inkjet cartridge IJC 110 Front of carriage HC Plate 101 Locking-out to Carriage HC 102 Pad 103 Flexible Sheet 104 Support Plate for Electrical Connection 105 Positioning Hook 106 Positioning Protrusion Surface 107 Reinforcing Rib 108 Positioning Surface on Hook Side 109 Fixed Shaft 11 90 ° hook surface 200 Platen roller 202 Paper retainer plate 204 Lead screw 205 Spiral groove 206 Carriage HC lever 207 208 Photocoupler 209 211 Driving force transmission gear 212 Suction start lever 213 Drive motor 215 Cap inside suction mechanism 216 Cap support member 217 Cleaning blade 218 Main body support plate 219 Blade moving member 220 Cam 222 Cap 222 Opening in cap P Recording medium L Front position when ink jet cartridge IJC is mounted

 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Hiroto Matsuda Inventor Hiroto Matsuda 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Susumi Kurihara 5-197 Yamamoto-machi, Naka-ku, Yokohama

Claims (7)

[Claims] 1. A substrate having a thin film resistance element in which a protective film of an electric insulator is provided in contact with a heating resistor,
A substrate having a thin film resistance element, wherein a ratio of argon (Ar) atoms contained in the protective film is 0.2 wt% or more and 6.0 wt% or less. 2. The protective film has a multi-layered structure, and the ratio of argon (Ar) atoms contained in the lower region of the protective layer on the side in contact with the heating resistor is 0.2 wt% or more and 6.0 w.
t% or less, and the upper region is 1.0 wt% or more and 6.0
The substrate having the thin film resistance element according to claim 1, which is not more than wt%. 3. The substrate having a thin film resistance element according to claim 2, wherein the lower region is 40% or more of the thickness of the protective layer on the side in contact with the heating resistor. 4. The heating resistor is HfB ₂ or T
A substrate having the thin film resistance element according to claim 1, which is aN. 5. The protective layer in contact with the heating resistor is made of SiO.
_The substrate having the thin film resistance element according to claim 1, which is ₂ . 6. A substrate according to any one of claims 1 to 5, and an ink flow path provided corresponding to the thin film resistance element, wherein the thin film resistance element is used to heat ink in the ink flow path. An inkjet head that records by ejecting ink. 7. An ink jet apparatus comprising the ink jet head according to claim 6 and means for supplying a signal to the head, and ejecting ink to perform recording.