JPH06229953A - Device for measuring crystal lattice face of single-crystalline material - Google Patents

Abstract

PURPOSE:To eliminate the need for changing the layout of an X-ray optical system and hence perform a stable and accurate measurement quickly even if X rays are measured for a plurality of single-crystalline materials with different crystal lattice faces. CONSTITUTION:X rays from an X-ray source 3 are divided by two slits 16a and 16b and are applied to each of two first crystals 15a and 15b. The X rays which are diffracted by the first crystal enter a same point P of an orientation flat face 2 of a silicon ingot 13. When the orientation flat face 2 is rotated by omega, only those satisfying diffraction conditions in reference to the crystal lattice face of the orientation flat face 2 out of incidence X rays are diffracted and are detected by either of an X-ray counter 5a or 5b. When the mirror index of the crystal lattice face of the orientation flat face 2 changes, diffraction X rays are detected by the other X-ray counter out of the X-ray counters 5a and 5b.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to quartz, silicon (S
The present invention relates to a crystal lattice plane measuring device for irradiating a single crystal material such as i) with X-rays and detecting the diffracted X-rays diffracted by the crystal lattice planes in the single crystal material.

[0002]

2. Description of the Related Art As a crystal lattice plane measuring apparatus as described above, a cut plane inspecting apparatus such as a quartz plate, a main surface orientation measuring apparatus for a silicon wafer, an orientation flat plane orientation measuring apparatus for a silicon ingot, and the like are known. A brief description of each device is as follows.

Cut Surface Inspection Device for Crystal Plates Crystal plates have been widely used in recent years, for example, as an oscillation source for electronic equipment. This crystal plate is generally formed by cutting a rod-shaped crystal raw material into a thin film of, for example, about 0.2 mm. In this crystal plate, when the inclination angle of the cut surface of the crystal plate with respect to the crystal lattice plane inside the crystal plate changes variously, the characteristics of the crystal plate change accordingly.

Even if the raw material of the quartz crystal is cut by a cutting device under constant equipment conditions, in reality, the inclination angle of the cut surface of each crystal plate with respect to the internal crystal lattice plane has a considerable deviation. Therefore, in the case of randomly using a plurality of cut quartz plates without selecting them, it is not possible to obtain uniform output characteristics for each quartz plate. Therefore, usually, for each cut quartz plate, measure the deviation from the reference angle value of the tilt angle with respect to the crystal lattice plane of the cut surface, classify those quartz plates for each angular deviation of a predetermined range, and use There is. As described above, the device used for measuring the deviation of the inclination angle of the cut surface of a single crystal material such as a crystal plate with respect to the crystal lattice plane is the cut surface inspection device.

Device for Measuring Main Surface Orientation of Silicon Wafer A silicon ingot is formed in a cylindrical shape as shown in FIG. 6, for example. By thinly cutting this in the direction perpendicular to the axis L, a silicon wafer as shown in FIG. 7 is formed. It is widely known that this silicon wafer is used as a base material for ICs and the like. The circular surface 1 of this silicon wafer is usually called a main surface, and an IC or the like is manufactured on the main surface 1. In general, the characteristics of a silicon wafer are specified by the crystal orientation of the main surface 1. For example, if the Miller index of the crystal lattice plane of the main surface 1 is (1
11), (511), (100), etc., the silicon wafers have their own characteristics. Therefore, in order to manufacture an IC having a constant quality, it is required to introduce a silicon wafer having a crystal lattice plane with a constant Miller index as the main surface 1 into the IC manufacturing line. The principal surface orientation measuring device for a silicon wafer measures the deviation of the crystal orientation of the principal surface of the silicon wafer from the processed surface.

Orientation Flat Surface Orientation Measuring Device for Silicon Ingot A flat surface 2 called an orientation flat surface is generally formed on a side surface of a silicon ingot having a shape as shown in FIG. 6 by processing such as polishing. The orientation flat surface 2 serves as an index for recognizing which direction the crystal lattice plane inside the silicon ingot faces. The orientation flat surface 2 is not limited to the silicon ingot, but naturally exists also in the silicon wafer (FIG. 7) manufactured from the silicon ingot. A series of IC manufacturing processes applied to the silicon wafer are executed with reference to the orientation flat surface 2. The orientation flat surface orientation measuring device measures whether or not the orientation flat surface is processed at an accurate position with respect to the crystal lattice plane in the ingot, in other words, the deviation of the crystal orientation of the orientation flat surface from the processed surface is measured.

As a crystal lattice plane measuring device for a single crystal material used for various purposes as described above, a device having a structure as shown in FIG. 8 is conventionally known. In this apparatus, the divergence angle of the X-ray emitted from the X-ray source 3 is regulated by the divergence slit 24, and the single crystal material 4 is irradiated with the X-ray, and the crystal lattice plane 4a in the single crystal material 4 is irradiated. The X-ray counter 5 detects the diffracted X-rays diffracted by. The X-ray counter 5 is arranged in advance according to the diffraction angle 2θ specific to the crystal lattice plane 4a of the single crystal material 4 to be measured.
The single crystal material 4 is centered on the X-ray irradiation point P and is indicated by an arrow AA ′.
If the X-ray intensity detected by the X-ray counter 5 is maximized, the angular position can be searched for by rotating and swinging as described above, that is, so-called ω rotation. For example, by measuring the deviation of the strongest intensity position from the reference position, the angular deviation of the crystal lattice plane 4a from the normal position can be measured.

[0008]

As described above, according to the conventional crystal lattice plane measuring device for a single crystal material, the installation position of the X-ray detector is previously determined, and the known crystal lattice plane of the single crystal material is measured. The X-ray diffraction angle was set according to the X-ray diffraction angle, and the X-ray diffraction measurement was performed in that state. Therefore, only one type of crystal lattice plane measurement is possible, and in order to measure different planes of the crystal lattice, the arrangement position of the X-ray optical system, for example, the X-ray counter, must be set to satisfy the diffraction angle each time. It had to be rearranged.

The present invention has been made in order to solve the above problems, and it is necessary to relocate the X-ray optical system even when measuring a plurality of single crystal materials having different crystal lattice planes. Therefore, it is an object of the present invention to provide a crystal lattice plane measuring device capable of performing stable and accurate measurement in an extremely short time.

[0010]

To achieve the above object, a crystal lattice plane measuring device for a first single crystal material according to the present invention is an X-ray source for generating X-rays and a crystal lattice having a different Miller index. A plurality of first crystals each having a face, a plurality of slits provided corresponding to each of the plurality of first crystals and for guiding X-rays emitted from an X-ray source to the corresponding respective first crystals, and X corresponding to each of the first crystals of
It has a plurality of X-ray detecting means having a small diameter for taking in the rays and an ω rotating means for rotating the single crystal material by ω. X above
The line detection means is arranged at a position where the diffracted X-rays diffracted by the individual first crystals and further diffracted by the single crystal material can be detected.
The ω rotation is the swinging rotation of the single crystal material performed around the incident point of the X-ray in order to change the incident angle of the X-ray incident on the single crystal material.

Incidentally, at least one X-ray detecting means having a positional resolution can be provided in place of the plurality of X-ray detecting means having a small X-ray intake aperture.

A second crystal lattice plane measuring apparatus according to the present invention is an X-ray source for generating X-rays, a plurality of first crystals having crystal lattice planes having different Miller indices, and a plurality of X-ray sources and a plurality of X-ray sources. A slit arranged between the first crystal and a first crystal, slit moving means for moving the slit in the direction crossing the X-ray beam emitted from the X-ray source, and a single crystal material diffracted by any one of the first crystals. It is characterized by having at least one X-ray detecting means having a large X-ray intake diameter for detecting diffracted diffracted X-rays, and ω rotating means for rotating the single crystal material by ω.

In the first crystal lattice plane measuring apparatus, the X-ray detecting means having a small X-ray capturing diameter is a generally-used proportional counter of a type that captures X-rays at a relatively narrow single point. (PC: Proportional Counter) and scintillation counter (SC)
Etc.

Further, the X-ray detecting means having a position resolution is an X-ray detecting means having a function capable of capturing X-rays over a wide range and measuring an angular position of the captured X-rays. That is. X like this
Examples of the line detection means include PSPC (Position Sensi)
It is possible to use what is called a tive Proportional Counter).

As shown by reference numeral 6 in FIG. 9, this PSPC is composed of a casing 8 having a long opening 7 for X-ray intake and three conductive wire rods arranged inside the casing 8, that is, an anode. It has a cathode 9, a cathode 10, and a delay line 11. When the diffracted X-rays emitted from the X-ray source 3 and diffracted by the sample 12 are taken into the casing 8 through the X-ray taking-in opening 7, an electric charge is induced in the cathode 10 and an electric pulse signal corresponding to the electric charge. Appear at both ends of the delay line 11. X by measuring the pulse signal
The intensity of the line is measured. The pulse signals appearing at both ends of the delay line 11 have a time difference proportional to the distance in the length direction X. Therefore, the X-ray incident position in the length direction X can be known by measuring the time difference between the pulse signals generated at both ends of the delay line 11. In other words, PSPC
6 is PS at each position in the length direction X, that is, the diffraction angle 2θ direction within the range in which the anode 9 and the like are stretched.
The intensity and angular position of each X-ray incident on the PC 6 are simultaneously detected.

In the second crystal lattice plane measuring device, the X-ray detecting means having a large X-ray capturing diameter is an X-ray detector capable of capturing a wide range of X-rays. As such an X-ray detector, for example, the above-mentioned PC
Alternatively, it is possible to use an X-ray detector having a wide opening for capturing X-rays based on the same measurement principle as SC or the like.
The PSPC described above can also be used. In addition,
According to PSPC, not only the X-ray intensity but also the position information of the captured X-rays can be measured, but with an X-ray detector in which only the X-ray capturing aperture is widened by the same principle as PC, the captured X-rays It is not possible to measure the position information. However, with respect to the second crystal lattice plane measuring device, an X-ray detector that does not have such position resolution can be used.

[0017]

In the first crystal lattice plane measuring device, the X-ray emitted from the X-ray source is divided by each slit and is incident on each first crystal. The X-rays incident on the first crystal are diffracted at different diffraction angles corresponding to the crystal lattice planes in each first crystal,
Then, they are incident on almost the same point of the single crystal material. When the single crystal material is rotated by ω in this state, when one of the plurality of X-rays incident on the single crystal material satisfies the diffraction condition with respect to the crystal lattice plane of the single crystal material, the single crystal material is X-rayed. The rays are diffracted, and the diffracted X-rays are captured by one of the plurality of X-ray detection means and detected. By knowing the angular position of the X-ray detecting means that detects the diffracted X-rays, the X-ray incident surface of the single crystal material, for example, the orientation flat surface of the single crystal ingot or the single crystal wafer. It is possible to know the Miller index of the crystal lattice plane of the machined surface such as the main surface of. Further, by measuring the ω rotation angle when the diffracted X-ray is detected, the deviation of the crystal lattice plane from the reference angle can be known.

When an X-ray detecting means having a positional resolution is used in place of the plurality of X-ray detecting means having a narrow X-ray intake diameter, the diffraction angle (2θ) of the diffracted X-ray can be measured. Therefore, the mirror index of the crystal lattice plane of the X-ray incident surface of the single crystal material, for example, the orientation flat surface of the single crystal ingot or the main surface of the single crystal wafer can be known from the diffraction angle.

In the second crystal lattice plane measuring device, the X-ray emitted from the X-ray source is made incident on any one of the plurality of first crystals by moving the slit. The first
The diffracted X-ray diffracted by the crystal and further diffracted by the single crystal material is captured by the X-ray detection means having a large X-ray capture aperture and detected. By measuring which first crystal X-rays have been detected by the X-ray detection means,
It is possible to know the mirror index of a crystal lattice plane of an X-ray incident surface of a single crystal material, for example, an orientation flat surface of a single crystal ingot or a main surface of a single crystal wafer.

[0020]

EXAMPLE FIG. 1 shows an example in which the crystal lattice plane measuring apparatus according to the present invention is used to measure the crystal orientation of the orientation flat surface of a silicon ingot. FIG. 2 shows a front view of the apparatus when viewed from the direction of arrow II. Further, in the present embodiment, in particular, as the silicon ingot to be measured, those having the Miller indices of the crystal lattice planes forming the orientation flat surface 2 of (220) and (400), or those other than these are mixed, This crystal lattice plane measuring device shall be used to select them.

In FIG. 1, the crystal lattice plane measuring apparatus of this embodiment comprises a support base 14 for supporting a silicon ingot 13, an X-ray source 3 for emitting X-rays, an X-ray source 3 and a support base 14. Two first crystals 15a, 15b arranged between
And two circular slits 16a and 16b arranged between the X-ray source 3 and the first crystals 15a and 15b, and two X-ray counters for detecting diffracted X-rays diffracted by the silicon ingot 13. 5a and 5b. The slits 16a and 16b may be square instead of circular.

The ω rotating mechanism 25 is attached to the ingot support base 14.
Is attached. This ω rotation mechanism is included in the orientation flat surface 2 of the ingot 13 and
With a central axis L1 extending in the axial direction of
Is a mechanism capable of reciprocating rotation, that is, oscillating as indicated by an arrow ω within an appropriate angle range, and at the same time measuring the rotation angle. This ω rotation mechanism is not limited to a special structure.

Copper (Cu) is used as the material of the target forming the X-ray source 3, and the X-ray focus on the target is a point focus or a line focus extending in the direction perpendicular to the paper surface of FIG. First crystal 15
The a, 15b and the X-ray counters 5a, 5b are arranged at different positions in the vertical direction, as shown in FIG. The X-ray counters 5a and 5b are configured by counters having a small X-ray intake diameter, that is, counters of a type that captures X-rays in a narrow range.

When a silicon single crystal is irradiated with copper (Cu) Kα rays, if the orientation of the crystal lattice planes in the silicon single crystal, that is, the Miller index is different, diffracted X-rays diffracted by those crystal lattice planes. The diffraction angle of changes. The following table shows an example of such changes.

[0025]

As described above, the orientation flat surface 2 of the silicon ingot 13 is (22)
Since it is the (0) plane or the (400) plane, a single crystal material having a crystal lattice plane of Miller index (220) is used as the first crystal 15a, and the other first crystal 15a is used.
A single crystal material having a crystal lattice plane of Miller index (400) is used as b. Since the X-ray diffraction angles of these single crystal materials with respect to copper (Cu) Kα rays are as described above, the X-rays diffracted by the first crystals 15a and 15b are incident on the same position P on the orientation flat surface 2. As shown in FIG.

Regarding the two X-ray counters 5a and 5b, the upper X-ray counter 5a is arranged at a position where the diffracted X-rays from the (220) plane can be taken in, and the lower X-ray counter 5b is arranged. It is arranged at a position where the diffracted X-rays from the (400) plane can be taken. The outputs of these X-ray counters 5a and 5b are sent to the determination circuit 17.

When the crystal plane of the orientation flat surface 2 to be measured is set to another plane other than (220) and (400), the crystal plane of the single crystal material used as the first crystal is also correspondingly. The position where the first crystal is arranged is changed so that the diffracted X-rays can be made incident on the same X-ray irradiation point P on the orientation flat surface 2 in relation to the X-ray diffraction angle.

Since the crystal lattice plane measuring device for a single crystal material according to this embodiment is constructed as described above, the X-rays emitted from the X-ray source 3 are divided into two beams by the two slits 16a and 16b. The upper first crystal 15 is divided into
It is incident on a and the other is incident on the lower first crystal 15b. These X-ray beams are extracted as parallel beams of characteristic X-rays, for example, Kα rays by being diffracted by the first crystals 15a and 15b, and both are incident on the X-ray irradiation point P on the orientation flat surface 2 of the silicon ingot 13. .

If the orientation flat surface 2 is composed of the (220) plane, at the appropriate angular position during the ω rotation of the silicon ingot 13 by the ω rotation mechanism 25,
Only the diffracted X-rays from the upper first crystal 15a are on the orientation flat surface 2
And the diffraction condition is satisfied, the light is diffracted at the orientation flat surface 2, and the diffracted X-rays are detected by the upper X-ray counter 5a. The determination circuit 17 uses the upper X-ray counter 5a.
Detects the diffracted X-ray, it is determined that the orientation flat surface 2 of the silicon ingot 13 to be measured is the (220) surface. Further, from the angle measurement value of the ω rotation angle when the upper X-ray counter 5a detects the diffracted X-ray, the orientation flat surface 2
It is possible to measure the deviation of the tilt angle of the crystal lattice plane that constitutes the from the reference tilt angle.

On the other hand, if the orientation flat surface 2 is composed of the (400) plane, the diffraction X from the lower first crystal 15b
Only the line satisfies the diffraction condition and is diffracted on the orientation flat surface 2, and it is detected by the lower X-ray counter 5b.
The determination circuit 17 determines that the orientation flat surface 2 is the (400) surface by receiving the output from the lower X-ray counter 5b.

The orientation flat surface 2 is the (220) surface and the (40) surface.
If neither of the 0) planes, the X-ray counters 5a and 5b do not detect X-rays. Therefore, the determination circuit 1
7 determines that the orientation flat surface 2 is neither the (220) surface nor the (400) surface, or the (220) surface or the (40) surface.
Even if it is the (0) plane, it is determined that the degree of deviation of the tilt angles of the crystal lattice planes is large enough to exceed the ω rotation angle range of the orientation flat surface 2 by the ω rotation mechanism.

FIG. 3 shows another embodiment of the crystal lattice plane measuring device for a single crystal material according to the present invention. This embodiment differs from the previous embodiment shown in FIG. 2 in that the PS is replaced by two X-ray counters 5a and 5b having a small X-ray intake diameter.
That is, PC6 is used. As for this PSPC6,
The same thing as what was shown in FIG. 9 can be used. According to this embodiment, since the diffraction angle 2θ of the diffracted X-ray incident on the PSPC 6 is measured by the PSPC 6,
The determination circuit 17 can determine the mirror index of the crystal lattice plane that constitutes the orientation flat surface 2 and the tilt angle deviation of the crystal lattice plane based on the diffraction angle.

FIG. 4 shows still another embodiment of the crystal lattice plane measuring device for a single crystal material according to the present invention. This embodiment is different from the previous embodiment shown in FIG. 2 in that a slit member 18 having one circular or rectangular slit 16 is provided instead of two circular or rectangular slits, and the slit member is provided. A slit moving device 19 for translating 18 in a direction traversing the X-ray beam R as shown by an arrow A is provided, and two X-ray counters 5a having a small X-ray intake aperture are provided.
Instead of 5b, one X-ray counter 20 having a large X-ray intake diameter is provided, and a slit position sensor 21 that detects the position of the slit 16 and sends the position information to the determination circuit 17 is provided. . The X-ray counter 20 is an X-ray that is diffracted on the orientation flat surface 2 via the upper first crystal 15a.
X-ray that is wide enough to capture both the X-ray and the X-ray diffracted by the orientation flat surface 2 via the lower first crystal 15b.
It has a wire intake diameter.

In this embodiment, by moving the slit member 18 and hence the slit 16 by the slit moving means 19, any one of the two first crystals 15a and 15b is selected and the X-ray source is selected. The selected first crystal is irradiated with X-rays emitted from the sample No. 3. When the X-ray diffracted by the selected first crystal satisfies the diffraction condition with the orientation flat surface 2, the X-ray is diffracted by the orientation flat surface 2, and the diffracted X-ray is detected by the X-ray counter 20. It The determination circuit 17 knows that the X-ray counter 20 has detected X-rays and whether the slit 16 is aligned with the upper first crystal 15a or the lower second crystal 15b at that time, thereby determining the orientation flat surface 2 The Miller index of the crystal lattice planes to be constructed is determined.

The X-ray counter 20 is used for the ingot 1
It is sufficient to detect that the X-ray is diffracted in 3, and it is not necessary to detect the diffraction angle of the diffracted X-ray. However, that X
Instead of the line counter 20, it is possible to use a PSPC 6 having a position resolution as shown in FIG.

FIG. 5 shows still another embodiment of the crystal lattice plane measuring device for a single crystal material according to the present invention. In the embodiment shown in FIG. 2, as the first crystals 15a and 15b,
If those diffraction angles that exist over a wide range from a small angle to a wide angle are used, the divergence angle of the X-ray is sufficiently large in the point focus or the line focus X-ray focus extending in the direction perpendicular to the paper surface of FIG. I can't take it. The present embodiment shown in FIG. 5 can solve this problem.

The crystal lattice plane measuring device according to this embodiment is
Up and down direction of the paper surface, that is, the first crystals 15a, 15b, 15
X-ray source 3 with line focus long in the direction in which c are arranged
And a slit 16 which is long in the vertical direction and each first crystal 15a
Collimator 22 placed in front of (to the left of the figure)
a, 22b, 22c. According to this embodiment, since the X-rays diverge over a wide range from the upper and lower ends of the line focus, it is possible to sufficiently supply the X-rays to the plurality of crystals 15a to 15c arranged over a wide angle range.

Although the present invention has been described with reference to some preferred embodiments, the present invention is not limited to these embodiments. For example, in the above examples, the crystal lattice plane measuring device according to the present invention was used to measure the crystal orientation of the orientation flat surface of the silicon ingot, but the cut surface of the crystal plate was tilted with respect to the crystal lattice plane inside the crystal plate. Of course, the present invention can be applied to the case of inspecting the angle and the case of measuring the principal plane orientation of the silicon wafer.

In the above embodiment, (220) plane and (4)
Although each crystal plane of the (00) plane was set as the measurement target, it is needless to say that any other crystal plane can be set as the measurement target.
However, in that case, it is necessary to appropriately change the material and arrangement position of the first crystal in accordance with the surface to be measured.

In the above embodiment, two types of crystal planes can be discriminated by installing two first crystals.
However, by setting the number of first crystals to three or more, more types of crystal planes can be discriminated.

[0042]

According to the present invention, it is possible to form a plurality of X-ray optical systems in which X-rays are incident on the surface to be measured of the single crystal material at different angles. Even when X-ray diffraction measurement is performed on a single crystal material in which the orientation of the crystal lattice plane that forms the X-ray is variously changed, it is not necessary to change the arrangement of the X-ray optical system, and therefore stable and highly accurate measurement can be performed. It can be done in a short time.

[0043]

[Brief description of drawings]

FIG. 1 is a perspective view showing a first embodiment of a crystal lattice plane measuring device for a single crystal material according to the present invention.

FIG. 2 is a front view of the first embodiment.

FIG. 3 is a front view showing a second embodiment of the single crystal material lattice plane measuring device according to the present invention.

FIG. 4 is a front view showing a third embodiment of the lattice plane measuring apparatus for a single crystal material according to the present invention.

FIG. 5 is a front view showing a fourth embodiment of the lattice plane measuring apparatus for a single crystal material according to the present invention.

FIG. 6 is a perspective view showing an example of a silicon ingot as a single crystal material.

FIG. 7 is a perspective view showing an example of a silicon wafer as a single crystal material.

FIG. 8 is a schematic front view showing an example of a conventional lattice plane measuring device.

FIG. 9 is an example of an X-ray detector having position resolution, P
It is a perspective view which shows SPC.

[Explanation of symbols]

 2 Orientation flat surface 3 X-ray source 5a X-ray counter with small X-ray inlet diameter 5b X-ray counter with small X-ray inlet diameter 6 PSPC (X-ray detection means with position resolution) 13 Silicon ingot (single crystal material) 15a 1 crystal 15b 1st crystal 16 slit 16a slit 16b slit 20 X-ray acquisition X-ray counter with large aperture

Claims (3)

[Claims] 1. A crystal lattice plane measuring device for irradiating a single crystal material with X-rays and detecting diffracted X-rays diffracted by a crystal lattice plane in the single crystal material, wherein an X-ray source for generating X-rays, A plurality of first crystals having crystal lattice planes with different Miller indices, and X-rays emitted from an X-ray source are provided to correspond to each of the plurality of first crystals to the corresponding individual first crystals. A plurality of slits for guiding, and a plurality of slits arranged corresponding to each of the first crystals,
A plurality of X-ray detection means having a small X-ray intake aperture arranged at a position where diffracted X-rays diffracted by the individual first crystals and further diffracted by the single crystal material can be detected; An apparatus for measuring a crystal lattice plane of a single crystal material, comprising: a rotating means. 2. A crystal lattice plane measurement of a single crystal material, characterized in that at least one X-ray detecting means having a positional resolution is provided in place of the plurality of X-ray detecting means having a small X-ray intake diameter. apparatus. 3. A crystal lattice plane measuring device for irradiating a single crystal material with X-rays and detecting diffracted X-rays diffracted by a crystal lattice plane in the single crystal material, wherein an X-ray source for generating X-rays, A plurality of first crystals having crystal lattice planes with different Miller indices, a slit arranged between the X-ray source and the plurality of first crystals, and a slit extending in a direction crossing the X-ray beam emitted from the X-ray source. Slit moving means for moving, at least one X-ray detecting means having a large X-ray capturing aperture for detecting diffracted X-rays diffracted by any one of the first crystals and further diffracted by the single crystal material, and the single crystal material An apparatus for measuring a crystal lattice plane of a single crystal material, comprising: an ω rotating means for rotating by ω.