JPH06224678A - Frequency adjusting method for multistage connection type surface acoustic wave filter - Google Patents
Frequency adjusting method for multistage connection type surface acoustic wave filterInfo
- Publication number
- JPH06224678A JPH06224678A JP2729193A JP2729193A JPH06224678A JP H06224678 A JPH06224678 A JP H06224678A JP 2729193 A JP2729193 A JP 2729193A JP 2729193 A JP2729193 A JP 2729193A JP H06224678 A JPH06224678 A JP H06224678A
- Authority
- JP
- Japan
- Prior art keywords
- surface acoustic
- acoustic wave
- wave filter
- frequency
- connection type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は圧電基板上を伝搬する弾
性表面波を応用した弾性表面波フィルタに関するもので
あり、特に多段接続型の弾性表面波フィルタの周波数調
整方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave filter to which surface acoustic waves propagating on a piezoelectric substrate are applied, and more particularly to a frequency adjusting method for a multi-stage connection type surface acoustic wave filter.
【０００２】[0002]
【従来の技術】多段接続型の弾性表面波共振子フィルタ
は、圧電基板の表面に交差指電極並びに反射器電極を形
成した弾性表面波共振器を２つ並列に設けてなる共振器
型フィルタ素子をさらに並列に配置し、多段接続する構
成であり、これにより保証減衰量、減衰傾度をより良好
なものにしようとしていた。ここで用いる各フィルタ素
子は、通常同一の通過帯域特性を有するもので構成され
ていた。しかし、通過帯域幅を広くとるような場合、そ
の通過帯域特性は図７のＡのグラフのようないわゆる双
峰特性となり、このような場合群遅延特性は平坦さが失
われ、弾性表面波フィルタをパルス変調方式を伴う通信
機器等に使用する場合、パルス形状を異ならせる等の理
由で好ましくないという問題点があった。2. Description of the Related Art A multi-stage connection type surface acoustic wave resonator filter is a resonator type filter element in which two surface acoustic wave resonators having interdigital electrodes and reflector electrodes are provided in parallel on the surface of a piezoelectric substrate. Is further arranged in parallel and is connected in multiple stages, which is intended to improve the guaranteed damping amount and damping gradient. Each of the filter elements used here is usually made of one having the same pass band characteristic. However, when the pass band width is wide, the pass band characteristic becomes a so-called bimodal characteristic as shown in the graph of FIG. 7A, and in such a case, the group delay characteristic loses flatness and the surface acoustic wave filter. However, there is a problem in that when the above is used in a communication device or the like involving a pulse modulation method, it is not preferable because the pulse shape is different.
【０００３】[0003]
【発明が解決しようとする課題】通過特性をいわゆる単
峰特性とし、平坦な群遅延特性を得る構成としては、広
帯域フィルタと狭帯域フィルタを組み合わせる手法が考
えられるが、このような手法であると減衰傾度が緩やか
になりすぎ、保証減衰量を低下させてしまう問題点があ
った。また、多段接続した一部の弾性表面波フィルタ素
子の電極ピッチあるいは電極の厚みを変えることにより
当該フィルタの中心周波数を変化させる手法が考えられ
るが、このような手法で所望の通過帯域が重なるよう中
心周波数を微少に周波数を変化させることは実際上困難
であった。A method of combining a wide band filter and a narrow band filter is conceivable as a configuration for obtaining a flat group delay characteristic with a so-called unimodal characteristic as a pass characteristic. There is a problem in that the damping gradient becomes too gentle and the guaranteed damping amount decreases. Further, it is possible to change the center frequency of the filter by changing the electrode pitch or the electrode thickness of some of the surface acoustic wave filter elements connected in multiple stages. It was practically difficult to slightly change the center frequency.
【０００４】本発明は上記問題点を解決するためになさ
れたもので、多段接続した共振子型のような弾性表面波
フィルタにおいて、所望の保証減衰量を確保するととも
に、少なくとも１つのフィルタ素子の周波数を所望分変
化させ、所望の通過帯域特性、並びに群遅延特性を得る
ことができる弾性表面波フィルタを得ることを目的とす
る。The present invention has been made to solve the above problems, and in a surface acoustic wave filter such as a resonator type in which multiple stages are connected, a desired guaranteed attenuation amount is ensured and at least one filter element is provided. An object of the present invention is to obtain a surface acoustic wave filter that can obtain desired pass band characteristics and group delay characteristics by changing the frequency by a desired amount.
【０００５】[0005]
【課題を解決するための手段】上記問題点を解決するた
めに、本発明による多段接続型弾性表面波フィルタの周
波数調整方法は、圧電基板の表面に、弾性表面波を励起
する交差指電極とこの交差指電極の両側に励起された弾
性表面波を反射する反射器を有する弾性表面波共振器を
２つ並列に配置した弾性表面波フィルタ素子、あるいは
直列に配置された１組の交差指電極とこの１組の交差指
電極の両側に励起された弾性表面波を反射する反射器を
有する弾性表面波フィルタ素子を選択的に複数並列に配
置してなる多段接続型弾性表面波フィルタにおいて、少
なくとも１つの弾性表面波フィルタ素子を残して、他の
弾性表面波フィルタ素子の上面に所定の間隔をもって板
上のマスクを配置するとともに、この多段接続型弾性表
面波フィルタを励振させながらドライエッチングするこ
とにより、前記マスクに被覆されていない弾性表面波フ
ィルタ素子部分の圧電基板あるいは電極をエッチング
し、所望の周波数に調整することを特徴とする。In order to solve the above-mentioned problems, a method of adjusting the frequency of a multi-stage connection type surface acoustic wave filter according to the present invention includes a cross finger electrode for exciting a surface acoustic wave on a surface of a piezoelectric substrate. A surface acoustic wave filter element in which two surface acoustic wave resonators having reflectors for reflecting surface acoustic waves excited on both sides of the interdigital electrode are arranged in parallel, or a pair of interdigital electrodes arranged in series. And a multi-stage connection type surface acoustic wave filter in which a plurality of surface acoustic wave filter elements each having a reflector for reflecting the surface acoustic wave excited on both sides of the pair of interdigital electrodes are selectively arranged in parallel, While leaving one surface acoustic wave filter element, a mask on a plate is arranged on the upper surface of another surface acoustic wave filter element at a predetermined interval, and this multi-stage connection type surface acoustic wave filter is excited. By dry etching while the piezoelectric substrate or the electrode of the surface acoustic wave filter element portions not covered with the mask is etched, and adjusting to a desired frequency.
【０００６】このような周波数調整は、多段接続型弾性
表面波フィルタにおいて通過帯域特性において単峰特性
を得る場合のみならず、逆に、要求される電気的特性に
よっては双峰特性を得る場合にも有効である。Such frequency adjustment is performed not only in the case of obtaining a single-peak characteristic in the pass band characteristic of the multi-stage connection type surface acoustic wave filter, but also in the case of obtaining a double-peak characteristic depending on the required electrical characteristics. Is also effective.
【０００７】[0007]
【作用】少なくとも１つの弾性表面波フィルタ素子を残
して、他の弾性表面波フィルタ素子の上面に所定の間隔
をもって板上のマスクを配置するとともに、ドライエッ
チングにて電極あるいは圧電基板を選択的にエッチング
するので、多段接続型弾性表面波フィルタ励振させなが
ら周波数調整することができ、周波数調整のモニターが
容易に行える。圧電基板をエッチングした場合、電極に
重み付けがなされたのと同じ作用が生じ周波数は低下
し、電極をエッチングした場合その逆の作用で周波数は
高くなる。もちろん保証減衰量等の他の電気的特性につ
いても、実用面で悪影響を与えることはない。With at least one surface acoustic wave filter element remaining, a mask on a plate is arranged on the upper surface of another surface acoustic wave filter element at a predetermined interval, and electrodes or piezoelectric substrates are selectively etched by dry etching. Since etching is performed, the frequency can be adjusted while exciting the multi-stage surface acoustic wave filter, and the frequency adjustment can be easily monitored. When the piezoelectric substrate is etched, the same effect as when the electrodes are weighted occurs and the frequency decreases, and when the electrodes are etched, the opposite effect causes the frequency to increase. Of course, other electrical characteristics such as the guaranteed attenuation amount will not be adversely affected in practical use.
【０００８】[0008]
【実施例】本発明による実施例を図面とともに説明す
る。図１は本発明による弾性表面波フィルタの平面図、
図２は周波数調整状態を示す図、図３は図２のＸ−Ｘ断
面図（モニターの表示はしていない）である。圧電基板
１は薄板状の水晶板からなり、矩形形状に加工されてい
る。これら圧電基板１の表面には、弾性表面波共振器を
２つ並列に設けてなる２つの弾性表面波フィルタ素子２
１，２２が形成されている。これら２つの弾性表面波フ
ィルタ素子は、それぞれ交差指電極２１ａ，２２ａ並び
に反射器電極２１ｂ，２１ｃ，２２ｂ，２２ｃを有する
とともに、交差指電極２１ａの他端と交差指電極２２ａ
の一端とが連結電極２３により電気的に接続されてお
り、全体として多段接続型弾性表面波フィルタ２を構成
している。なお、これら電極材料はＡｌを使用してい
る。また、各電極からは電極を外部に導出するための電
極パッド２４，２５，２６，２７，２８，２９が引き出
されている。弾性表面波フィルタ素子間には電磁シール
ド電極３１，３２が形成されており、それぞれ弾性表面
波フィルタ素子２１の反射器電極２１ｂから前記連結電
極２３近傍まで、弾性表面波フィルタ素子２２の反射器
電極２２ｃから同じく連結電極２３近傍まで延びてい
る。この電磁シールド電極はなるべく両フィルタ素子間
全体を通るように設けるとよい。Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a surface acoustic wave filter according to the present invention,
2 is a diagram showing a frequency adjustment state, and FIG. 3 is a sectional view taken along line XX of FIG. 2 (the monitor is not displayed). The piezoelectric substrate 1 is made of a thin crystal plate and is processed into a rectangular shape. Two surface acoustic wave filter elements 2 each having two surface acoustic wave resonators provided in parallel are provided on the surface of the piezoelectric substrate 1.
1, 22 are formed. These two surface acoustic wave filter elements respectively have crossing finger electrodes 21a and 22a and reflector electrodes 21b, 21c, 22b and 22c, and the other end of the crossing finger electrode 21a and the crossing finger electrode 22a.
Is electrically connected to one end of the multi-stage connection type surface acoustic wave filter 2 by the connecting electrode 23. In addition, Al is used for these electrode materials. Further, electrode pads 24, 25, 26, 27, 28, 29 for leading the electrodes to the outside are drawn out from the respective electrodes. Electromagnetic shield electrodes 31 and 32 are formed between the surface acoustic wave filter elements, respectively, from the reflector electrode 21 b of the surface acoustic wave filter element 21 to the vicinity of the connecting electrode 23, respectively. Similarly, it extends from 22c to the vicinity of the connecting electrode 23. This electromagnetic shield electrode is preferably provided so as to extend between the both filter elements as much as possible.
【０００９】次に、この多段接続型弾性表面波フィルタ
の周波数調整方法について説明する。圧電基板上の弾性
表面波フィルタ素子２２の上面に、数ミリの間隔をおい
て金属板からなるマスク４を設置する。また、弾性表面
波フィルタの入力電極２９、出力電極２６間には、この
弾性表面波フィルタを励振させつつその周波数を監視す
るモニター５を接続している。そしてこの弾性表面波フ
ィルタを励振させつつドライエッチングを行う。エッチ
ング対称物が水晶板（圧電基板）の場合、エッチング雰
囲気はＣ2Ｆ6あるいはＡｒ等を使用すればよく、またAl
電極がエッチング対称の場合、その雰囲気は例えばＣＣ
ｌ4を使用すればよい。なお、ＣＣｌ4を使用した場合、
後で基板表面に残る塩素（Ｃｌ）を取り除くため洗浄す
る必要がある。このエッチング雰囲気中に電圧を印加
し、圧電基板の表面に垂直にぶつかる方向（図３のＢで
示す矢印の方向）にＣ2Ｆ6等の分子を加速させ、所望の
エッチングを行う。このエッチングの状況すなわち周波
数の変化をモニターで監視しつつエッチングを進め、所
望の周波数が得られたところでエッチングを停止すれば
よい。Next, a method of adjusting the frequency of the multi-stage connection type surface acoustic wave filter will be described. A mask 4 made of a metal plate is placed on the upper surface of the surface acoustic wave filter element 22 on the piezoelectric substrate at intervals of several millimeters. A monitor 5 is connected between the input electrode 29 and the output electrode 26 of the surface acoustic wave filter to monitor the frequency of the surface acoustic wave filter while exciting it. Then, dry etching is performed while exciting the surface acoustic wave filter. When the etching object is a quartz plate (piezoelectric substrate), C 2 F 6 or Ar may be used as the etching atmosphere.
When the electrodes have etching symmetry, the atmosphere is, for example, CC.
l 4 may be used. If CCl 4 is used,
It is necessary to wash the substrate to remove chlorine (Cl) remaining on the substrate surface later. A voltage is applied in this etching atmosphere to accelerate molecules such as C 2 F 6 in a direction perpendicular to the surface of the piezoelectric substrate (the direction of the arrow shown by B in FIG. 3) to perform desired etching. It is only necessary to advance the etching while monitoring the state of the etching, that is, the change in the frequency with a monitor, and stop the etching when the desired frequency is obtained.
【００１０】このようにして周波数調整された多段接続
型弾性表面波フィルタは、アルミナ等のセラミックから
なるパッケージに収納され、各電極パッドと必要な電気
的接続を行った後、金属性のフタが前記パッケージの開
口部に設けられた金属枠部分にシーム溶接等により接合
され、気密封止される。The frequency-adjusted multi-stage connection type surface acoustic wave filter is housed in a package made of ceramics such as alumina, and after the necessary electrical connection with each electrode pad is made, a metallic lid is provided. It is joined to the metal frame portion provided in the opening of the package by seam welding or the like and hermetically sealed.
【００１１】なお、図４に示すように、周波数調整前の
多段接続弾性表面波フィルタを、アルミナ等のセラミッ
クからなり、引出電極パッド６１，６２の設けられたパ
ッケージ６０に設置し、各電極パッド２６，２９と引出
電極パッド６１，６２をボンディングワイヤー６３，６
４にて電気的接続した後、圧電基板上の一部の弾性表面
波フィルタ素子の上面に、金属板からなるマスク４を設
置し、本発明による周波数調整を実施してもよい。この
周波数調整後、キャップ６５と前記パッケージ６０とを
接合し、多段接続型弾性表面波フィルタの完成となる。
この実施例であると、引出電極パッドが検査端子として
使用できる利点を有している。As shown in FIG. 4, a multi-stage connection surface acoustic wave filter before frequency adjustment is installed in a package 60 made of ceramic such as alumina and provided with extraction electrode pads 61 and 62, and each electrode pad is 26, 29 and the lead-out electrode pads 61, 62 with bonding wires 63, 6
After the electrical connection by 4, the mask 4 made of a metal plate may be placed on the upper surface of a part of the surface acoustic wave filter element on the piezoelectric substrate, and the frequency adjustment according to the present invention may be performed. After this frequency adjustment, the cap 65 and the package 60 are joined to complete the multi-stage connection type surface acoustic wave filter.
This embodiment has the advantage that the extraction electrode pad can be used as an inspection terminal.
【００１２】次に、周波数調整の具体例について、通過
帯域特性を示す図である図７、図８並びに群遅延特性を
示す図９とともに説明する。同一水晶板上に形成された
２つの弾性表面波フィルタ素子２１，２２は、同じ電気
的特性を有するように設計されており、例えば図７に示
すように弾性表面波フィルタ素子２１の通過帯域特性は
Ａ１、弾性表面波フィルタ２２のそれはＡ２であり、こ
れらを多段接続した多段接続型弾性表面波フィルタのそ
れはＡである。この状態では通過帯域特性が双峰特性を
示していることが理解できる。また、このときの群遅延
特性は図９のＡに示すように通過帯域において顕著な凸
部のある特性を示している。このような多段接続型弾性
表面波フィルタに対して、ＣＣｌ4ガスでＡｌ電極に対
しドライエッチングを行い、図７のＡ２に相当する弾性
表面波フィルタ素子を図８のＢ２に示すように周波数を
高くする。なお、図７のＡ１と図８のＢ１は周波数調整
をしない同じグラフである。これにより図８のＢに示す
ように、多段接続型弾性表面波フィルタとしての通過帯
域特性を単峰特性とすることができ、図９に示す群遅延
特性において通過帯域では平坦な特性が得られているこ
とが理解できる。Next, a specific example of frequency adjustment will be described with reference to FIGS. 7 and 8 showing pass band characteristics and FIG. 9 showing group delay characteristics. The two surface acoustic wave filter elements 21 and 22 formed on the same crystal plate are designed to have the same electrical characteristics, and for example, as shown in FIG. 7, the pass band characteristics of the surface acoustic wave filter element 21. Is A1, that of the surface acoustic wave filter 22 is A2, and that of the multi-stage connection type surface acoustic wave filter in which these are connected in multiple stages is A. In this state, it can be understood that the passband characteristic shows a bimodal characteristic. Further, the group delay characteristic at this time shows a characteristic having a remarkable convex portion in the pass band as shown in A of FIG. With respect to such a multi-stage connection type surface acoustic wave filter, dry etching was performed on the Al electrode with CCl 4 gas, and the surface acoustic wave filter element corresponding to A2 in FIG. 7 was changed in frequency as shown in B2 in FIG. Make it higher Note that A1 in FIG. 7 and B1 in FIG. 8 are the same graph without frequency adjustment. As a result, as shown in FIG. 8B, the pass band characteristic of the multi-stage connection type surface acoustic wave filter can be made a single peak characteristic, and the group delay characteristic shown in FIG. 9 has a flat characteristic in the pass band. Can understand.
【００１３】上記実施例では、横結合の多段接続型弾性
表面波フィルタについて説明したが、図５に示すように
縦結合の弾性表面フィルタ素子７１，７２を並列に配置
した構成の弾性表面波フィルタにも適用することができ
る。図５において、弾性表面波フィルタ素子７１は１組
の交差指電極７１ａ，７１ｂが直列に配置され、この１
組の交差指電極の両側に反射器７１ｃ，７１ｄが設けら
れた構成であり、弾性表面波フィルタ素子７２も同様の
構成である。弾性表面波フィルタ素子７２の上面にマス
ク４を配置し、上記実施例と同様の手段で周波数調整を
行う。また、図６に示すように横結合の弾性表面波フィ
ルタ素子８１と縦結合の弾性表面波フィルタ素子７１を
組み合わせた構成の弾性表面波フィルタにも適用するこ
とができる。なお、上記実施例では、２段接続の弾性表
面波フィルタにおいて単峰特性を得るための実施例につ
いて説明したが、逆に双峰特性を得る場合にも適用する
ことができる。また、３段以上の接続においても適用す
ることができ、このうちの少なくとも１つの弾性表面波
フィルタ素子上にマスクを配置し、スパッタリングによ
り周波数調整を行えばよい。In the above embodiment, the laterally coupled multistage connection type surface acoustic wave filter has been described. However, as shown in FIG. 5, the longitudinally coupled surface acoustic wave filter elements 71 and 72 are arranged in parallel. Can also be applied to. In FIG. 5, the surface acoustic wave filter element 71 has a pair of interdigital electrodes 71a and 71b arranged in series.
The reflectors 71c and 71d are provided on both sides of the pair of interdigital electrodes, and the surface acoustic wave filter element 72 has the same configuration. The mask 4 is arranged on the upper surface of the surface acoustic wave filter element 72, and the frequency is adjusted by the same means as in the above embodiment. Further, as shown in FIG. 6, the present invention can be applied to a surface acoustic wave filter having a combination of a laterally coupled surface acoustic wave filter element 81 and a longitudinally coupled surface acoustic wave filter element 71. In addition, in the above-mentioned embodiment, although the embodiment for obtaining the single-peaked characteristic in the two-stage surface acoustic wave filter has been described, it can be applied to the case where the double-peaked characteristic is obtained. The present invention can also be applied to a connection of three or more stages, and a frequency may be adjusted by arranging a mask on at least one of these surface acoustic wave filter elements and performing sputtering.
【００１４】[0014]
【発明の効果】本発明による多段接続型弾性表面波フィ
ルタの周波数調整方法によれば、少なくとも１つの弾性
表面波フィルタ素子を残して、他の弾性表面波フィルタ
素子の上面に所定の間隔をもって板上のマスクを配置す
るとともに、ドライエッチングにて電極あるいは圧電基
板を選択的にエッチングするので、多段接続型弾性表面
波フィルタ励振させながら周波数調整することができ、
周波数を監視しながら周波数の微調整が容易に行える。
よって、保証減衰量を確保するとともに、所望の通過帯
域特性、並びに群遅延特性を得ることができる。According to the method of adjusting the frequency of a multi-stage connection type surface acoustic wave filter according to the present invention, at least one surface acoustic wave filter element is left and the other surface acoustic wave filter element is plated at a predetermined interval on the upper surface thereof. Since the electrode or the piezoelectric substrate is selectively etched by dry etching while disposing the upper mask, it is possible to adjust the frequency while exciting the multi-stage connection type surface acoustic wave filter,
Fine adjustment of the frequency can be easily performed while monitoring the frequency.
Therefore, it is possible to secure a guaranteed attenuation amount and obtain desired pass band characteristics and group delay characteristics.
【図１】実施例を示す平面図。FIG. 1 is a plan view showing an embodiment.
【図２】周波数調整方法を示す平面図。FIG. 2 is a plan view showing a frequency adjustment method.
【図３】図２のＡ−Ａ断面図。3 is a cross-sectional view taken along the line AA of FIG.
【図４】他の実施例を示す断面図。FIG. 4 is a sectional view showing another embodiment.
【図５】他の実施例を示す平面図。FIG. 5 is a plan view showing another embodiment.
【図６】他の実施例を示す平面図。FIG. 6 is a plan view showing another embodiment.
【図７】通過帯域特性を示す図。FIG. 7 is a diagram showing pass band characteristics.
【図８】通過帯域特性を示す図。FIG. 8 is a diagram showing pass band characteristics.
【図９】群遅延特性を示す図。FIG. 9 is a diagram showing group delay characteristics.
１ 圧電基板 ２１，２２，７１，７２，８１，８２ 弾性表面波フィ
ルタ素子 ３１，３２ 電磁シールド電極 ４ マスク ５ モニター ６０ パッケージ1 Piezoelectric Substrate 21, 22, 71, 72, 81, 82 Surface Acoustic Wave Filter Element 31, 32 Electromagnetic Shield Electrode 4 Mask 5 Monitor 60 Package
Claims (1)
る交差指電極とこの交差指電極の両側に励起された弾性
表面波を反射する反射器を有する弾性表面波共振器を２
つ並列に配置した弾性表面波フィルタ素子、あるいは直
列に配置された１組の交差指電極とこの１組の交差指電
極の両側に励起された弾性表面波を反射する反射器を有
する弾性表面波フィルタ素子を選択的に複数並列に配置
してなる多段接続型弾性表面波フィルタにおいて、少な
くとも１つの弾性表面波フィルタ素子を残して、他の弾
性表面波フィルタ素子の上面に所定の間隔をもって板上
のマスクを配置するとともに、この多段接続型弾性表面
波フィルタを励振させながらドライエッチングすること
により、前記マスクに被覆されていない弾性表面波フィ
ルタ素子部分の圧電基板あるいは電極をエッチングし、
所望の周波数に調整することを特徴とする多段接続型弾
性表面波フィルタの周波数調整方法。1. A surface acoustic wave resonator having, on a surface of a piezoelectric substrate, a crossing finger electrode for exciting a surface acoustic wave and reflectors for reflecting the excited surface acoustic wave on both sides of the crossing finger electrode.
SAW filter elements arranged in parallel, or a set of interdigital electrodes arranged in series and a surface acoustic wave having reflectors for reflecting surface acoustic waves excited on both sides of the set of interdigital electrodes In a multi-stage connection type surface acoustic wave filter in which a plurality of filter elements are selectively arranged in parallel, at least one surface acoustic wave filter element is left and other surface acoustic wave filter elements are arranged on a plate with a predetermined interval on the upper surface. While arranging the mask, by dry etching while exciting this multi-stage connection type surface acoustic wave filter, the piezoelectric substrate or the electrode of the surface acoustic wave filter element portion not covered by the mask is etched,
A frequency adjusting method of a multi-stage connection type surface acoustic wave filter, characterized by adjusting to a desired frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2729193A JPH06224678A (en) | 1993-01-21 | 1993-01-21 | Frequency adjusting method for multistage connection type surface acoustic wave filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2729193A JPH06224678A (en) | 1993-01-21 | 1993-01-21 | Frequency adjusting method for multistage connection type surface acoustic wave filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06224678A true JPH06224678A (en) | 1994-08-12 |
Family
ID=12216982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2729193A Pending JPH06224678A (en) | 1993-01-21 | 1993-01-21 | Frequency adjusting method for multistage connection type surface acoustic wave filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06224678A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010001584A1 (en) | 2009-02-10 | 2010-08-12 | Denso Corporation, Kariya-City | Acoustic surface acoustic wave element, method of manufacturing the element and method of changing a resonant frequency of the element |
| US20110035915A1 (en) * | 2009-08-11 | 2011-02-17 | Murata Manufacturing Co., Ltd. | Method for manufacturing surface acoustic wave element |
| US7996984B2 (en) * | 2003-02-22 | 2011-08-16 | Mems Solution Inc. | Process for making a FBAR bandpass filter |
| DE102011076052A1 (en) | 2010-05-21 | 2012-02-09 | Denso Corporation | Surface acoustic wave oscillator |
-
1993
- 1993-01-21 JP JP2729193A patent/JPH06224678A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7996984B2 (en) * | 2003-02-22 | 2011-08-16 | Mems Solution Inc. | Process for making a FBAR bandpass filter |
| DE102010001584A1 (en) | 2009-02-10 | 2010-08-12 | Denso Corporation, Kariya-City | Acoustic surface acoustic wave element, method of manufacturing the element and method of changing a resonant frequency of the element |
| US8253302B2 (en) | 2009-02-10 | 2012-08-28 | Denso Corporation | Surface acoustic wave element, method of producing the same, and method of changing resonation frequency of the same |
| US20110035915A1 (en) * | 2009-08-11 | 2011-02-17 | Murata Manufacturing Co., Ltd. | Method for manufacturing surface acoustic wave element |
| US8689416B2 (en) * | 2009-08-11 | 2014-04-08 | Murata Manufacturing Co., Ltd. | Method for manufacturing surface acoustic wave element |
| DE102011076052A1 (en) | 2010-05-21 | 2012-02-09 | Denso Corporation | Surface acoustic wave oscillator |
| US8368474B2 (en) | 2010-05-21 | 2013-02-05 | Denso Corporation | Surface acoustic wave oscillator |
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