JPH06224245A - Semiconductor device - Google Patents

Abstract

PURPOSE:To protect an outer mold resin sealing member for a double-molded semiconductor device from any possible damage. CONSTITUTION:In a semiconductor device where semiconductor elements 1 and 2 are double-transfer-molded, a corner part 7 or a projected part of an inner side first transfer mold resin sealing member 5 is a curved surface. This construction makes it possible to prevent the concentration of local stress on an outer side second resin member 6 and protect the outside resin from damage and provide a semiconductor device whose product quality is stabilized and equalized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device having a semiconductor element double-sealed.

[0002]

2. Description of the Related Art A conventional semiconductor device is manufactured by using a transfer mold die for sealing a semiconductor element with a resin. The resin layer for this element is composed of a first resin sealing member that directly seals the element and a second resin sealing member that covers from above the first resin sealing member. The corner of one resin member is formed of a curved surface having a radius of 0.1 to 0.2 mm or less and close to the corner.

FIG. 3 is a sectional view of a semiconductor device for explaining a conventional example.

As shown in FIG. 3, in this semiconductor device, a light emitting diode 11 and a phototransistor 12 are connected to an electrode member 14 by a gold wire 13, respectively, and these are put in a mold or the like to form a first resin sealing member 15. Is injected and molded. Next, the second resin sealing member 16 is similarly coated on the molded first resin sealing member 15 to form a device. In this case, the second resin sealing member 16
At the time of contraction, a damaged portion 19 may occur due to a corner portion (corner portion) 17 of the first resin sealing member 15.

Conventionally, there are two methods for manufacturing the above-mentioned transfer mold die for resin encapsulation: a split die method and an electric discharge machining method. The former will be described below with reference to FIG. 4 and the latter with reference to FIG.

First, FIG. 4 is a sectional view of a metal mold formed by a split mold in manufacturing a conventional semiconductor device.

As shown in FIG. 4, the mold cavity 21 is formed.
The corner portion of is a ridge line that joins the two metal blocks 22 and 23, and this portion forms a sharp edge with a radius of 0.05 mm or less. Therefore, the molded resin,
In particular, the corners of the first resin member are sharpened.

Further, FIG. 5 is a sectional view of a mold formed by electric discharge machining in the manufacture of a conventional semiconductor device, like FIG.

As shown in FIG. 5, in the method using the electric discharge machining, the material 31 of the mold and the metal electrode 32 processed into the shape of the cavity to be opened in the mold 31 are oil 33.
In this state, the metal electrode 32 is pressed against the material 31 of the mold, and a current is caused to flow from the constant current source 34 between the electrode 32 and the material 31. Joule heat is generated by this current, and the die material 31 can be melt-processed.
In this case, of course, the metal electrode 32 is also melted and deformed at the same time, so a new electrode is usually replaced three times to obtain the required shape. In principle, the electric discharge machining method can arbitrarily form the corner shape of the cavity, but since the electrode is made by cutting, the shape that has been the easiest to make in the past, that is, the edge has a sharp corner, was used. Used electrodes. In the case of a mold made by electric discharge machining three times using such an electrode, the corner of the cavity formed in the space has a radius of 0.2 m.
It had a curved surface of m or less (usually about 0.1 mm).

[0010]

In the conventional double-sealed semiconductor device described above, since the corners of the first resin sealing member are formed by curved surfaces having a radius of 0.2 mm or less, the second resin When the sealing member is formed by transfer molding, the stress applied to the outer resin due to the outer resin shrinkage concentrates on the corners of the first resin sealing member, and the location 19 in FIG. As described above, there is a problem that the second resin sealing member 16 is damaged.

Further, even if the product is not damaged immediately after molding, the first resin sealing member and the second resin sealing member having different thermal expansions due to the heat applied when the product is soldered. There is a problem that stress is applied between the two and the first resin sealing member damages the second resin sealing member as in the above.

It is an object of the present invention to provide a semiconductor device of stable and uniform quality without damaging the conventional second resin sealing member.

[0013]

The semiconductor device of the present invention comprises:
A semiconductor element, an electrode member on which the semiconductor element is mounted and connected by metal wiring, a semiconductor element and the electrode member are sealed, and a surface having a predetermined radius or more is transfer-molded on an outer corner portion or a protruding portion. It is configured to include a resin sealing member and a second resin sealing member that substantially covers and seals the first resin sealing member.

[0014]

Embodiments of the present invention will now be described with reference to the drawings.

FIG. 1 is a sectional view of a photocoupler for explaining the first embodiment of the present invention.

As shown in FIG. 1, the light emitting diode 1 and the phototransistor 2 arranged to face the diode 1 are installed on an electrode member 4 and wired by a gold wire 3. The first light-transmissive resin encapsulant 5 covers the light emitting diode 1 and the semiconductor element of the phototransistor 2 and the electrode member 4, and the outer corner portion 7 forms a curved surface having a minimum radius of 0.4 mm or more. Seal. The mold of the first translucent resin encapsulant 5 is formed by electric discharge machining with rounded corners of electrodes. Further, the entire surface of the translucent resin sealing material 5 is sealed with the second non-translucent resin sealing material 6. Therefore, the light from the light emitting diode 1 passes through the transparent resin and is received by the phototransistor 2, but the light is prevented from leaking to the outside by the nontransparent resin.

As described above, the corner portion 7 of the outer shape of the first light-transmissive resin encapsulant 5 is changed from the conventional split mold having the minimum radius of 0.05 mm as in the present embodiment, so that the photocoupler is not damaged. It is possible to solve the problem that the translucent sealing resin is damaged by the corner portion of the translucent sealing resin.
For example, the heat-resistant temperature of this photocoupler has increased from 220 incisors to 380 ° C, which is 300 ° C required for soldering.
The above heat resistance can be obtained.

Next, FIG. 2 is a sectional view of a light reflection sensor for explaining a second embodiment of the present invention.

As shown in FIG. 2, the light emitting diode 1 and the phototransistor 2 are separately installed on the electrode member 4 so as to face the same direction, and are wired by the gold wire 3. The semiconductor element and the electrode member 4 are separately covered, and the outer corner portion 7 and the protruding portion 8 have a minimum radius of 0.
The first light-transmissive resin sealing material 5 is used for sealing so as to form a curved surface of 4 mm or more. Further, the separately formed translucent resin encapsulant 5 is sealed with the second non-translucent resin encapsulant 6 except for the protruding portion 8. Such a light emitting diode 1
Light is transmitted and received by the light reflection sensor including the phototransistor 2 through the respective protruding portions 8.

The mold of the first light-transmissive resin encapsulant 5 in the light reflection sensor thus formed is formed by electric discharge machining in which the corners of the electrodes are rounded, as in the first embodiment. Further, the same function improvement can be obtained in the heat resistant temperature of the light reflection sensor and the heat resistance during soldering.

Although the present embodiment has been described above, the present invention is not limited to an optical semiconductor device such as a photocoupler or a light reflection sensor, and may be similarly implemented even if it is replaced with a semiconductor device including a normal transistor. You can
At that time, the first sealing resin material does not have to be a light-transmitting resin.

[0022]

As described above, in the semiconductor device of the present invention, a curved surface having a predetermined radius or more is formed at the outer corner portion or the protruding portion of the first resin sealing member that seals the semiconductor element and the electrode member. As a result, stress concentration during double resin encapsulation, that is, stress applied to the second resin encapsulation member due to difference in molding shrinkage or thermal expansion does not concentrate on the corners of the first resin encapsulation member. Therefore, there is an effect that the second resin sealing member can be prevented from being damaged, and the heat resistance can be improved because the resin portion is not broken even if some stress concentration occurs.

[Brief description of drawings]

FIG. 1 is a sectional view of a photo coupler for explaining a first embodiment of the present invention.

FIG. 2 is a sectional view of a light reflection sensor for explaining a second embodiment of the present invention.

FIG. 3 is a cross-sectional view of a semiconductor device for explaining a conventional example.

FIG. 4 is a cross-sectional view of a mold formed by a split mold in manufacturing a conventional semiconductor device.

FIG. 5 is a cross-sectional view of a mold formed by electric discharge machining in manufacturing a conventional semiconductor device, similar to FIG.

[Explanation of symbols]

 1 Light Emitting Diode 2 Phototransistor 3 Gold Wire 4 Electrode Member 5 First Resin Sealing Material 6 Second Resin Sealing Material 7 Corner 8 Protrusion

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁵ Identification number Office reference number FI technical display location B29C 45/26 7158-4F H01L 23/28 D 8617-4M 23/29 23/31 31/12 A 7210-4M

Claims (2)

[Claims] 1. A semiconductor device, an electrode member on which the semiconductor device is mounted and connected by metal wiring, a semiconductor device and the electrode member are sealed, and a curved surface having a predetermined radius or more is formed at an outer corner portion or a protruding portion by transfer molding. A semiconductor device comprising a formed first resin sealing member and a second resin sealing member that substantially covers and seals the first resin sealing member. 2. The semiconductor device according to claim 1, wherein the curved surface formed on the outer corner portion or the protruding portion is formed into a curved surface having a radius of 0.3 mm or more.