JPH06216104A - Rotary-type washing drying device for batch-type treating wafer - Google Patents

Abstract

PURPOSE:To rapidly dry the surface of a wafer efficiently by providing a heater within the inside. CONSTITUTION:A wafer cassettes 20 with a plurality of wafers 18 is placed at a wafer cassette stand 10A of a wafer rotar assembly body 10 and a washing liquid such as pure water is supplied from a nozzle 14 to a wafer 18, thus washing the wafer 18. After washing of the wafer 18 is completed, the supply of the washing liquid from the nozzle 14 is stopped and a heater 30 is lowered. Then, while power is supplied to the heater 30 and the surface of the wafer 18 is heated, the rotar assembly body is rotated at a high speed by a motor 12. As a result, centrifugal force is applied to the washing liquid deposited on the surface of the wafer 18, the washing liquid is eliminated from the surface of the wafer 18, and at the same time the washing liquid is allowed to evaporate from the surface of the wafer 18, thus drying the surface of the wafer 18 efficiently and rapidly.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a batch type rotary cleaning and drying apparatus for wafer processing.

[0002]

2. Description of the Related Art A conventional batch type rotary cleaning / drying apparatus for wafer processing is, for example, as shown in a schematic sectional view of FIG. 9, a rotor assembly 10, a motor 12 for rotating the rotor assembly 10, It comprises a liquid supply nozzle 14 for supplying various liquids for cleaning the wafer and the like, and a liquid discharge part 16.

For example, when cleaning and drying the wafer 18,
A wafer cassette 20 containing a plurality of wafers 18 is placed on the wafer cassette placing portion 10A of the wafer rotor assembly 10. Then, a cleaning liquid such as pure water is supplied to the liquid supply nozzle 1
4 to the wafer 18 to clean the wafer 18. After the cleaning is completed, the supply of the cleaning liquid from the liquid supply nozzle 14 is stopped, and then the rotor assembly 10 is rotated at a high speed by the motor 12. This allows the wafer 18
The cleaning liquid adhering to the surface of the wafer is subjected to centrifugal force, and the cleaning liquid is removed from the wafer surface. The removed cleaning liquid is discharged from the liquid discharge unit 16 to the outside.

[0004]

In such a conventional batch type rotary cleaning and drying apparatus for wafer processing, the cleaning liquid is removed from the wafer surface only by the centrifugal force, so that there is a problem that the drying of the wafer surface is slow. is there.

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a batch type rotary cleaning / drying apparatus for wafer processing which can effectively dry the wafer surface.

[0006]

A batch type rotary cleaning and drying apparatus for wafer processing according to a first aspect of the present invention for achieving the above object is characterized in that a heater is provided therein. To do.

A second aspect of the present invention for achieving the above object.
The batch type rotary cleaning and drying apparatus for wafer processing according to the above aspect is characterized in that a drying gas introducing section is provided inside.

In the batch type rotary cleaning and drying apparatus for wafer processing according to the second aspect of the present invention, the drying gas introducing section is so arranged that the drying gas is blown onto the upper surfaces of the plurality of wafers arranged inside. It is desirable to arrange. Alternatively, it is desirable to arrange the drying gas introducing portion so that the drying gas is blown to the lower surfaces of the plurality of wafers arranged inside. Further, it is more desirable to dispose the drying gas introduction part so that the drying gas is sprayed on the upper surface and the lower surface of the plurality of wafers arranged inside.
Further, a heater can be provided inside.

In the batch type rotary cleaning and drying apparatus for wafer processing according to the present invention, a cleaning liquid is used to clean / clean wafers.
Not only the apparatus for performing the drying but also various apparatuses such as a wafer processing apparatus using various chemical solutions such as resist stripping and cleaning on the wafer and wet etching. The wafer surface means not only the surface of the wafer itself but also the surface of the semiconductor element formed on the wafer and the surface of various thin films formed on the wafer.

[0010]

In the batch type rotary cleaning and drying apparatus for wafer processing of the present invention, since the heater or the drying gas introducing section is provided inside, the wafer surface can be effectively and quickly dried. .

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A batch type rotary cleaning and drying apparatus for wafer processing according to the present invention will be described below with reference to the accompanying drawings. In the drawings, the same components are designated by the same reference numerals.

(Example-1) The apparatus of Example-1 relates to a batch type rotary cleaning / drying apparatus for wafer processing according to the first aspect of the present invention. The feature of this device is that the heater 30 is provided inside the device.

As shown in the schematic cross-sectional view of FIG. 1, the apparatus of Example 1 includes a rotor assembly 10, a motor 12 for rotating the rotor assembly 10, various liquids for cleaning wafers, etc. A liquid supply nozzle 14 for supplying
It comprises a liquid discharge part 16. Heater 30 during wafer drying
May be disposed above the interior of the device. The heater 30 can be composed of an infrared lamp, a laser oscillator that radiates infrared rays, a resistance heater, and the like. The heater 30 may be provided with a heat ray reflecting mirror (not shown). The heater 30 is
There may be one or more. It is desirable that the heater 30 be moved up and down by a lifting device (not shown).

For example, when cleaning and drying the wafer 18,
A wafer cassette 20 containing a plurality of wafers 18 is placed on the wafer cassette placing portion 10A of the wafer rotor assembly 10. Then, a cleaning liquid such as pure water is supplied to the liquid supply nozzle 1
4 to the wafer 18 to clean the wafer 18. When cleaning the wafer, it is desirable to keep the heater 30 in the raised position so that the cleaning liquid does not hang on the heater 30.

After the cleaning of the wafer is completed, the supply of the cleaning liquid from the liquid supply nozzle 14 is stopped, and then the heater 3 is used.
0 is lowered by the lifting device. Then, the heater 30
Power to the motor 12 to heat the wafer surface.
Causes the rotor assembly 10 to rotate at high speed. As a result, a centrifugal force acts on the cleaning liquid adhering to the surface of the wafer 18 to remove the cleaning liquid from the wafer surface, and at the same time, the cleaning liquid is evaporated from the wafer surface (particularly, the upper surface) by the heat from the heater 30. . In this way, the wafer surface can be dried effectively and promptly. The removed cleaning liquid is discharged from the liquid discharge unit 16 to the outside.

(Embodiment 2) Embodiment 2 which is a modification of the batch type rotary cleaning and drying apparatus for wafer processing described in Embodiment 1 is shown in a schematic sectional view in FIG. Example-
The difference from the No. 1 apparatus is that the heater 30 may be disposed below the inside of the apparatus when the wafer is dried. Further, a plurality of blades 32 for preventing liquid splashing are provided on the outer side of the rotor assembly 10 in the radial direction, and the liquid discharge portion 16 has blades 32.
It is provided outside of. When the rotor assembly 10 is rotated at a high speed during the drying of the wafer, a centrifugal force acts on the cleaning liquid adhering to the surface of the wafer 18, and the cleaning liquid is removed from the surface of the wafer and formed between the blades 32. It flows out to the liquid discharge part 16 through the formed gap. By providing the blade 32, it is possible to prevent the wafer surface from being contaminated by the liquid droplets that bounce off the side wall of the apparatus. Other configurations are the same as those of the device shown in FIG. The operation of the apparatus of Example-2 is also the same as that of the apparatus of Example-1 except that the cleaning liquid is easily evaporated from the wafer surface (particularly, the lower surface), and detailed description thereof will be omitted.

A modification of the batch type rotary cleaning and drying apparatus for wafer processing described in the embodiment 1 is shown in a schematic sectional view in FIG. The difference from the apparatus shown in FIG. 1 is that the heater 30 can be disposed above and below the inside of the apparatus when the wafer is dried. Other configurations are the same as those of the device shown in FIG. The operation of this apparatus is also the same as that of the apparatus of Example 1 except that the cleaning liquid is more effectively evaporated from the upper and lower surfaces of the wafer, and detailed description thereof will be omitted.

(Embodiment 3) An apparatus of Embodiment 3 relates to a batch type rotary cleaning / drying apparatus for wafer processing according to the second aspect of the present invention. The feature of this apparatus is that a drying gas introducing section 40 is provided inside the apparatus.

The apparatus of Example-3 is basically the same as the apparatus of Example-1 shown in FIG. The difference from the apparatus of Example-1 is that, as shown in the schematic cross-sectional view of FIG. 4, when the wafer is dried, instead of the heater, the drying gas introduction part 4 is used.
There is a point where 0 can be arranged above the inside of the device. A drying gas supply source (not shown) provided outside the apparatus supplies nitrogen gas, air, etc., which are heated as necessary, to the wafer surface. One or a plurality of drying gas introduction units 40 may be arranged. It is desirable that the drying gas introducing unit 40 be moved up and down by a lifting device (not shown). Further, although it is desirable to attach a current plate to the gas blowing portion of the drying gas introducing portion 40, it is not essential.

For example, when cleaning and drying the wafer 18,
A wafer cassette 20 containing a plurality of wafers 18 is placed on the wafer cassette placing portion 10A of the wafer rotor assembly 10. Then, a cleaning liquid such as pure water is supplied to the liquid supply nozzle 1
4 to the wafer 18 to clean the wafer 18. When cleaning the wafer, it is desirable to keep the drying gas introducing section 40 in the raised position so that the cleaning liquid does not hang on the drying gas introducing section 40.

After the cleaning of the wafer is completed, the supply of the cleaning liquid from the liquid supply nozzle 14 is stopped, and then the drying gas introducing section 40 is lowered by the elevating device. afterwards,
The rotor assembly 10 is rotated at a high speed by the motor 12 while supplying the drying gas to the wafer surface from the drying gas introducing unit 40. As a result, a centrifugal force acts on the cleaning liquid adhering to the surface of the wafer 18 to remove the cleaning liquid from the wafer surface, and at the same time, the cleaning liquid is removed by the drying gas from the drying gas introducing section 40 (especially the upper surface). )
Is evaporated from. In this way, the wafer surface can be dried effectively and promptly. The removed cleaning liquid is discharged from the liquid discharge unit 16 to the outside.

(Embodiment 4) Embodiment 4 which is a modification of the batch type rotary cleaning and drying apparatus for wafer processing described in Embodiment 3 is shown in a schematic sectional view in FIG. Example-3
The difference from the above apparatus is that the drying gas introducing section 40 can be disposed below the inside of the apparatus when the wafer is dried. Further, as in the second embodiment, a plurality of blades 32 for preventing liquid splashing are provided on the outer side in the radial direction of the rotor assembly 10, and the liquid discharge portion 16 is provided on the outer side of the blade 32. Other configurations are similar to those of the apparatus shown in FIG.
In addition, the operation of the apparatus of Example-4 is also performed on the wafer surface (particularly,
Example-3, except that the cleaning liquid is easily evaporated from the bottom surface)
The device is the same as that of the above-mentioned device, and detailed description thereof will be omitted.

(Embodiment 5) The batch type rotary cleaning and drying apparatus for wafer processing of Embodiment 5 is a modification of the apparatus of Embodiment 3. Example shown in a schematic sectional view in FIG.
In the apparatus of No. 5, a drying gas introduction unit 40 and a heater 30 may be arranged above and below the inside of the apparatus when the wafer is dried. Other configurations are similar to those of the apparatus shown in FIG. The operation of this apparatus is also the same as that of the embodiment-except that the cleaning liquid is more effectively evaporated from the upper and lower surfaces of the wafer.
Since it is the same as the device of No. 3, its detailed description is omitted.
The positions of the drying gas introducing section 40 and the heater 30 can be changed appropriately.

A modification of the batch type rotary cleaning and drying apparatus for wafer processing described in the embodiment 3 is shown in a schematic sectional view in FIG. The difference between the modified apparatus shown in FIG. 7 and the apparatus of Example-3 shown in FIG. 4 is that when the wafer is dried,
The point is that the drying gas introducing section 40 can be arranged above and below the inside of the apparatus. Other configurations are similar to those of the apparatus shown in FIG. The operation of this apparatus is also the same as that of the apparatus of Example-3, except that the cleaning liquid is more effectively evaporated from the upper and lower surfaces of the wafer, and detailed description thereof will be omitted.

A modification of the batch type rotary cleaning and drying apparatus for wafer processing described in the embodiment 3 is shown in a schematic sectional view in FIG. The apparatus of the modification shown in FIG.
2 is different from the above apparatus in order to ensure that the drying gas flows between the wafers 18 stored in the wafer cassette 20 and the straightening plates 42 at intervals substantially corresponding to the distance between the wafers 18. Is provided in the drying gas introducing section 40. As a result, the cleaning liquid can be evaporated more effectively. The current plate 42 can be vertically swung by a motor (not shown) or the like.

Although the present invention has been described above based on the preferred embodiments, the present invention is not limited to these embodiments. Although the cleaning liquid is used in each of the examples, various chemical liquid treatments such as resist peeling and cleaning on the wafer and wet etching can be used. Further, the batch type rotary cleaning and drying apparatus for wafer processing may be of any type. For example, when the wafer is placed vertically in the wafer cassette (that is, when the position of the wafer shown in FIG. 1 is rotated 90 degrees and placed in the wafer cassette),
The heater and / or the drying gas introduction unit may be arranged above the wafer cassette.

[0027]

Since the batch type rotary cleaning / drying apparatus for wafer processing of the present invention is provided with the heater and / or the drying gas introducing section, the wafer can be dried extremely efficiently.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a batch type rotary cleaning and drying apparatus for wafer processing of Example-1.

FIG. 2 is a schematic cross-sectional view of a batch-type rotary cleaning and drying apparatus for wafer processing of Example-2.

FIG. 3 is a schematic cross-sectional view showing a modification of the batch type rotary cleaning and drying apparatus for wafer processing of Example-1.

FIG. 4 is a schematic sectional view of a batch-type rotary cleaning and drying apparatus for wafer processing of Example-3.

FIG. 5 is a schematic cross-sectional view of a batch-type rotary cleaning and drying apparatus for wafer processing of Example-4.

FIG. 6 is a schematic sectional view of a batch type rotary cleaning and drying apparatus for wafer processing of Example-5.

FIG. 7 is a schematic sectional view showing a modification of the batch type rotary cleaning and drying apparatus for wafer processing of Example-3.

FIG. 8 is a schematic cross-sectional view showing a modification of the batch-type rotary cleaning and drying apparatus for wafer processing of Example-3.

FIG. 9 is a schematic sectional view of a conventional batch-type rotary cleaning and drying apparatus for wafer processing.

[Explanation of symbols]

 10 Rotor Assembly 10A Wafer Cassette Placement Part 12 Motor 14 Liquid Supply Nozzle 16 Liquid Discharge Part 18 Wafer 20 Wafer Cassette 30 Heater 32 Liquid Recoil Prevention Blade 40 Dry Gas Introducing Part 42 Rectifier Plate

Claims (5)

[Claims] 1. A batch type rotary cleaning and drying apparatus for wafer processing, wherein a heater is provided inside. 2. A batch type rotary cleaning and drying apparatus for wafer processing, wherein a drying gas introducing section is provided inside. 3. The batch type wafer processing rotation according to claim 2, wherein a drying gas introducing portion is arranged so that the drying gas is blown onto the upper surfaces of the plurality of wafers arranged inside. Washing and drying equipment. 4. The batch type of claim 2 or 3, wherein a drying gas introducing portion is arranged so that the drying gas is blown to the lower surfaces of the plurality of wafers arranged inside. Rotary cleaning and drying equipment for wafer processing. 5. A batch type rotary cleaning / drying apparatus for wafer processing according to claim 2, wherein a heater is provided inside.