JPH06209031A - Discriminating device for properiety of ultrasonic wire bonder - Google Patents

Discriminating device for properiety of ultrasonic wire bonder

Info

Publication number
JPH06209031A
JPH06209031A JP282293A JP282293A JPH06209031A JP H06209031 A JPH06209031 A JP H06209031A JP 282293 A JP282293 A JP 282293A JP 282293 A JP282293 A JP 282293A JP H06209031 A JPH06209031 A JP H06209031A
Authority
JP
Japan
Prior art keywords
ultrasonic
bonding
metal wire
wire
horn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP282293A
Other languages
Japanese (ja)
Inventor
Toshifumi Fujii
敏文 藤井
Toshio Nakamura
寿雄 中村
Hiromori Okumura
弘守 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP282293A priority Critical patent/JPH06209031A/en
Publication of JPH06209031A publication Critical patent/JPH06209031A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To discriminate the propriety of bonded states of metallic wires to bonding sections by means of a wire bonder using an ultrasonic wiring bonding method during the course of wire bonding. CONSTITUTION:In this ultrasonic wire bonder in which an ultrasonic vibrator element 6 for resonantly vibrating a capillary tool 1 is attached to a horn 3 constituted so that the horn 3 can press the capillary tool 1 which is fitted to the front end of the horn 3 and through which a metallic wire 2 is passed against a bonding section, the element 6 is connected to an ultrasonic wave detection circuit 11 through an amplifier 10.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、金属線を、半導体チッ
プ等のボンディングに対して超音波式ワイヤーボンディ
ング方法によって接合するようにしたワイボンダーにお
いて、前記金属線のボンディング部に対する接合の良否
を判別する装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonder for bonding a metal wire to a semiconductor chip or the like by an ultrasonic wire bonding method, and determines whether the metal wire is bonded to the bonding portion. It is related to the device.

【０００２】[0002]

【従来の技術】一般に、この種の超音波式ワイヤーボン
ディング方法は、例えば、特開平２−１５６５４８号公
報等に記載されているように、超音波振動素子を備えた
ホーンの先端にキャピラリーツールを取付け、このキャ
ピラリーツール内に挿通した金属線の先端を、半導体チ
ップにおける電極パッド等の第１ボンディング部に押圧
した状態で超音波振動素子に超音波振動を付加して共振
の状態にすることにより、金属線を第１ボンディング部
に接合し、次いで、前記キャピラリーツールを、リード
端子又は配線回路等の第２ボンディング部の移動したの
ち、この第２ボンディング部に押圧した状態で超音波振
動素子に超音波振動を付加して共振の状態にすることに
より、金属線を第２ボンディング部に接合すると言うも
のである。2. Description of the Related Art Generally, in this type of ultrasonic wire bonding method, a capillary tool is attached to the tip of a horn equipped with an ultrasonic vibrating element, as described in, for example, Japanese Patent Application Laid-Open No. 2-156548. By attaching the tip of the metal wire inserted in this capillary tool to the first bonding portion such as the electrode pad of the semiconductor chip, ultrasonic vibration is applied to the ultrasonic vibration element to bring it into a resonance state. , A metal wire is joined to the first bonding portion, and then the capillary tool is moved to a second bonding portion such as a lead terminal or a wiring circuit, and then the ultrasonic vibration element is pressed against the second bonding portion. It is said that the metal wire is bonded to the second bonding portion by applying ultrasonic vibration to bring it into a resonance state.

【０００３】[0003]

【発明が解決しようとする課題】すなわち、超音波式ワ
イヤーボンディング方法は、第１ボンディング部又は第
２ボンディング部に対して押圧した金属線に、超音波に
よる共振振動を付与することによって接合するものであ
る。しかし、その共振振動の状態には、ボンディング部
に対する金属線の押圧力、及び接触面積、並びにボンデ
ィング部が半導体チップであるかリードであるか等の多
種にわたっての条件が存在し、これらの条件が全て満た
されたときに、共振振動の状態になるものであるから、
前記超音波式ワイヤーボンディング方法によるワイヤー
ボンダーにおいては、共振振動の状態でないにもかかわ
らず、ボンディング部に対する金属線の接合を終了する
ことが発生する場合がある。That is, in the ultrasonic wire bonding method, the metal wire pressed against the first bonding part or the second bonding part is bonded by applying resonance vibration by ultrasonic waves. Is. However, in the state of the resonance vibration, there are various conditions such as the pressing force of the metal wire against the bonding portion, the contact area, and whether the bonding portion is a semiconductor chip or a lead. When all are satisfied, it becomes a state of resonance vibration,
In the wire bonder using the ultrasonic wire bonding method, the joining of the metal wire to the bonding portion may be terminated even though the wire bonder is not in the state of resonance vibration.

【０００４】このような場合、金属線は、ボンディング
部に対して、外観上は一応接合されているように見える
ものの、その接合強度は、所定値に達しておらず、その
まま、次の加工工程（例えば、半導体チップの部分を合
成樹脂製のモールド部でパッケージする工程等）に送り
出し移送されることにより、この移送の途中、又は次の
加工工程において、金属線にショック又は外力が作用し
たとき、金属線がボンディング部から外れることになる
から、不良品を製造してしまったり、不良品をそのまま
出荷してしまうと言う問題が多発するのであった。In such a case, although the metal wire seems to have been joined to the bonding portion in appearance, the joining strength does not reach a predetermined value, and as it is, the next processing step is performed. When a shock or an external force acts on the metal wire during the transfer or during the next processing step by being sent out and transferred (for example, the step of packaging the semiconductor chip part with a mold part made of synthetic resin) However, since the metal wire comes off from the bonding portion, there are many problems that a defective product is manufactured or the defective product is shipped as it is.

【０００５】本発明は、超音波式のワイヤーボンディン
グ方法によるワイボンダーにおいて、その超音波振動素
子からの戻り信号は、共振振動の状態と、非共振振動の
状態とでは大きく変化する点に着目し、このことを利用
して、金属線のボンディング部に対する接合の良否を、
ワイヤーボンディング中に判別できるようにすることを
技術的課題とするものである。The present invention focuses on the point that the return signal from the ultrasonic vibration element in the ultrasonic wave wire bonding method greatly changes between the resonance vibration state and the non-resonance vibration state. Utilizing this fact, it is possible to judge whether the bonding of the metal wire to the bonding portion is good or bad.
It is a technical subject to be able to discriminate during wire bonding.

【０００６】[0006]

【課題を解決するための手段】この技術的課題を達成す
るため本発明は、先端部に取付けた金属線挿通のキャピ
ラリーツールを、ボンディング部に対して押圧するよう
にしたホーンに、前記キャピラリーツールを共振振動す
るための超音波振動素子を設けて成る超音波式ワイボン
ダーにおいて、前記超音波振動素子に、増幅器を介して
超音波検波回路を接続する構成にした。In order to achieve this technical object, the present invention relates to a horn adapted to press a metal wire-inserted capillary tool attached to the tip end against a bonding portion, and the capillary tool. In an ultrasonic type wiper having an ultrasonic vibrating element for resonantly vibrating, the ultrasonic vibrating element is connected to an ultrasonic wave detection circuit via an amplifier.

【０００７】[0007]

【作 用】前記超音波式ワイボンダーにおいて、その
超音波振動素子からの戻り信号は、共振振動の状態と、
非共振振動の状態とでは大きく変化するから、この超音
波振動素子に対して、増幅器を介して超音波検波回路を
接続することにより、金属線のボンディング部に対する
接合に際して、超音波による共振振動が付与されるか否
かを検出することができるから、前記金属線のボンディ
ング部に対する接合の良否を、その接合中において判別
することができるのである。[Operation] In the ultrasonic wiper, the return signal from the ultrasonic vibration element indicates the state of resonance vibration,
Since there is a large change in the state of non-resonant vibration, by connecting an ultrasonic wave detection circuit to this ultrasonic vibration element via an amplifier, resonance vibration due to ultrasonic waves is generated when the metal wire is bonded to the bonding portion. Since it is possible to detect whether or not the metal wire is applied, it is possible to determine whether or not the metal wire is bonded to the bonding portion during the bonding.

【０００８】[0008]

【発明の効果】このように、本発明によると、金属線の
ボンディング部に対する接合の良否を、その接合中にお
いて判別することができることにより、接合不良のまま
次の加工工程に送り出されることを未然に防止すること
ができるから、不良品を製造したり、出荷したりするこ
とを回避できる効果を有する。As described above, according to the present invention, the quality of the joining of the metal wire to the bonding portion can be determined during the joining, so that the joining failure can be sent to the next processing step. Therefore, it is possible to avoid manufacturing or shipping defective products.

【０００９】[0009]

【実施例】以下、本発明の実施例を、図面について説明
する。図において、符号１は、金属線２を挿通したキャ
ピラリーツールを示し、このキャピラリーツール１は、
ホーン３の先端に取付けられ、半導体チップ４とリード
端子５との間を往復動したのち、その往復動の両端にお
いて、前記半導体チップ４とリード端子５に押圧するよ
うに構成されている。また、前記ホーン３には、超音波
振動素子６が取付けられている。Embodiments of the present invention will be described below with reference to the drawings. In the figure, reference numeral 1 indicates a capillary tool in which a metal wire 2 is inserted, and this capillary tool 1 is
It is attached to the tip of the horn 3, reciprocates between the semiconductor chip 4 and the lead terminal 5, and then is pressed against the semiconductor chip 4 and the lead terminal 5 at both ends of the reciprocation. An ultrasonic vibration element 6 is attached to the horn 3.

【００１０】そして、前記キャピラリーツール１に挿通
した金属線２の先端を、キャビラリーツール１にて半導
体チップ４における電極パッドに対して押圧した状態
で、ホーン３に取付けた超音波振動素子６に対して、コ
ントローラ７にて制御される超音波発振器８から超音波
信号を印加して、超音波による共振振動を付与すること
により、金属線２の先端を、半導体チップ４における電
極パッドに対して接合する。Then, with the tip of the metal wire 2 inserted through the capillary tool 1 being pressed against the electrode pad on the semiconductor chip 4 by the capillary tool 1, the ultrasonic vibration element 6 attached to the horn 3 is attached. On the other hand, by applying an ultrasonic signal from the ultrasonic oscillator 8 controlled by the controller 7 to give resonance vibration by the ultrasonic wave, the tip end of the metal wire 2 is applied to the electrode pad in the semiconductor chip 4. To join.

【００１１】次いで、前記キャビラリーツール１が、一
旦上昇動してリード端子５の上方まで移動したのち下降
動して、リード端子５に対して押圧されると、再び、前
記超音波振動素子６に対して、コントローラ７にて制御
される超音波発振器８から超音波信号を印加して、超音
波による共振振動を付与することにより、金属線２をリ
ード端子５に対して接合するのである。Next, the cavity tool 1 once moves up, moves to a position above the lead terminal 5 and then moves down, and when pressed against the lead terminal 5, the ultrasonic vibrating element 6 again. On the other hand, by applying an ultrasonic signal from the ultrasonic oscillator 8 controlled by the controller 7 and applying resonance vibration by the ultrasonic wave, the metal wire 2 is bonded to the lead terminal 5.

【００１２】この場合において、前記超音波発振器８か
らの戻り信号回路９を、前記コントローラ７にて制御さ
れる増幅器１０を介して、同じく前記コントローラ７に
て制御される超音波検波回路１１に接続して、この超音
波検波回路１１にて直流信号に変換したのち、前記コン
トローラ７に入力することにより、このコントローラ７
にて、前記超音波検波回路１１からの直流信号が共振振
動の状態であるか否かを判別して、アラームを作動する
か、ワイヤーボンディングを停止するように構成する。In this case, the return signal circuit 9 from the ultrasonic oscillator 8 is connected to the ultrasonic detection circuit 11 also controlled by the controller 7 via the amplifier 10 controlled by the controller 7. Then, the ultrasonic wave detection circuit 11 converts the signal into a direct current signal, which is then input to the controller 7, whereby the controller 7
Then, it is determined whether or not the DC signal from the ultrasonic detection circuit 11 is in a state of resonance vibration, and an alarm is activated or wire bonding is stopped.

【００１３】このようにすることにより、金属線２の半
導体チップ４及びリード端子５等のボンディング部に対
する接合に際して、超音波による共振振動が付与される
か否かを検出することができるから、前記金属線のボン
ディング部に対する接合の良否を、その接合中において
判別することができるのである。By doing so, it is possible to detect whether or not resonance vibration due to ultrasonic waves is applied when the metal wire 2 is bonded to the bonding portion such as the semiconductor chip 4 and the lead terminal 5, and therefore, The quality of the joining of the metal wire to the bonding portion can be determined during the joining.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の実施例を示す図である。FIG. 1 is a diagram showing an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１ キャピラリーツール ２ 金属線 ３ ホーン ４ 半導体チップ ５ リード端子 ６ 超音波振動素子 ７ コントローラ ８ 超音波発振器 １０ 増幅器 １１ 超音波検波回路 1 Capillary Tool 2 Metal Wire 3 Horn 4 Semiconductor Chip 5 Lead Terminal 6 Ultrasonic Vibration Element 7 Controller 8 Ultrasonic Oscillator 10 Amplifier 11 Ultrasonic Detection Circuit

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】先端部に取付けた金属線挿通のキャピラリ
ーツールを、ボンディング部に対して押圧するようにし
たホーンに、前記キャピラリーツールを共振振動するた
めの超音波振動素子を設けて成る超音波式ワイボンダー
において、前記超音波振動素子に、増幅器を介して超音
波検波回路を接続することを特徴とする超音波式ワイボ
ンダーにおける良否判別装置。1. An ultrasonic wave comprising a metal wire-inserted capillary tool attached to a tip portion thereof, a horn adapted to press against a bonding portion, and an ultrasonic vibrating element for resonating and vibrating the capillary tool. A pass / fail judgment device in an ultrasonic wiper, wherein an ultrasonic wave detection circuit is connected to the ultrasonic vibration element via an amplifier.
JP282293A 1993-01-11 1993-01-11 Discriminating device for properiety of ultrasonic wire bonder Pending JPH06209031A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP282293A JPH06209031A (en) 1993-01-11 1993-01-11 Discriminating device for properiety of ultrasonic wire bonder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP282293A JPH06209031A (en) 1993-01-11 1993-01-11 Discriminating device for properiety of ultrasonic wire bonder

Publications (1)

Publication Number Publication Date
JPH06209031A true JPH06209031A (en) 1994-07-26

Family

ID=11540109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP282293A Pending JPH06209031A (en) 1993-01-11 1993-01-11 Discriminating device for properiety of ultrasonic wire bonder

Country Status (1)

Country Link
JP (1) JPH06209031A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224351A (en) * 1989-02-27 1990-09-06 Shinkawa Ltd Wire bonding and device therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224351A (en) * 1989-02-27 1990-09-06 Shinkawa Ltd Wire bonding and device therefor

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