JPH06208133A - Manufacture of liquid crystal display substrate - Google Patents

Abstract

PURPOSE:To secure the excellent performance of a driving circuit unit in the manufacture of LCD substrate for forming a driving circuit unit on a non-crystal semiconductor film, which is formed on a glass substrate. CONSTITUTION:A non-crystal silicone film 2 is formed on a glass substrate 1 by the pressure reduction CVD or the like, and this non-crystal silicone film 2 is irradiated with pulse of laser beam into an island-shape pattern by a laser irradiating unit 3, and the irradiated area is polycrystallized. In this case, after the irradiation at an energy less than the irradiation energy required for polycrystallization per each area, irradiation at the required energy is performed. Thereafter, film forming treatment and etching are repeated in the irradiated area to form a driving circuit unit, which consists of semiconductor elements, and the wiring with a previously formed TFT 5 is performed by the film forming treatment in this process.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal display substrate.

[0002]

2. Description of the Related Art L using a TFT (thin film transistor)
CDs (Liquid Crystal Displays) have been attracting attention as they provide extremely high image quality. LCD of this kind
As shown in FIG. 8, the substrate is a TFT 1 on a glass substrate 1a.
The pixel unit 1c which is formed with b and is electrically connected to, for example, the drain electrode thereof is arranged with the TFT 1b via a gap, and the pixel unit U combined in this way
Are arranged in a large number, and for example, one side is several hundred μm.
Hundreds of thousands of rectangular pixel units U are arranged.

The transparent electrodes 1d common to each pixel unit U are arranged facing each other through a gap on the glass substrate on which the pixel unit U is formed, and the liquid crystal 1e is sealed in the gap to form the pattern shown in FIG. The pixel portion 10 is formed as shown in the figure. Further, the glass substrate 1 outside the pixel portion 10
A plurality of IC chips 11 forming a packaged drive circuit unit are arranged on the surface of a along the periphery of the pixel unit 10, and the terminals of each IC chip 11 are scanned corresponding to each pixel unit U of the pixel unit 10. The LCD substrate is configured by being connected to the gate wiring and the drain wiring which are electrode wirings.

Regarding the conventional method of manufacturing such an LCD substrate, first, for example, plasma CV is formed on the glass substrate 1a.
After forming a hydrogenated amorphous silicon film by D, a film forming or etching process is performed on the film to form a TFT, and then a pixel electrode and a TFT are connected to form a pixel unit U. After the above, the packaged IC chip 11 is attached to the glass substrate 1a, the IC chip 11 and the scanning electrode wiring are connected, and then the liquid crystal 1e is sealed.

[0005]

The TFT-LCD as described above is strongly desired to have a large area and high color display quality, and wiring from the gate drive circuit section (gate driver) and source drive circuit section ( The number of wirings from the source driver) is, for example, 400 and 1920, respectively. For this reason, the wiring work for electrically connecting the drive circuit portion 11 and each scanning electrode of the TFT liquid crystal pixel portion is extremely man-hours. This is one of the factors that increase the price of LCDs.

Therefore, if it is technically possible to perform film formation processing on the same glass substrate to form the semiconductor element of the drive circuit section and simultaneously perform the wiring between the drive circuit section and the pixel section, the drive circuit will be solved. Since the drive circuit portion and the scan electrode wiring can be simultaneously connected in the step of forming the portion,
This is a very effective method because it eliminates the need for troublesome wiring work such as when a C chip is attached on a glass substrate.

Here, regarding the TFT of the pixel unit,
Due to the function of displaying the pixels as an image, high speed is not required so much, so amorphous silicon can be used as the semiconductor layer, but the drive circuit part is equipped with a circuit that requires high-speed switching operation. Since the operating speed must be considerably faster than that of the TFT, that is, it must have a performance equivalent to that of an IC chip, the semiconductor layer has a field effect mobility higher than that of amorphous silicon. (Mobile
It is necessary to use polycrystalline silicon having a large ty).

On the other hand, in order to obtain polycrystalline silicon (polysilicon), it is necessary to heat the film to a temperature of about 600 ° C. or more by low pressure CVD to perform the film forming process, but a low cost glass substrate has a thermal strain point of 600 ° C. About 600 ℃
Since the glass substrate that can withstand a high temperature is expensive, the LCD price will eventually increase.

From the above, first, for example, plasma C
A large area hydrogenated amorphous silicon film (hereinafter referred to as "a-Si: H") is formed on a glass substrate in an atmosphere at a temperature of about 300 ° C. by VD.
Film) and then irradiating the a-Si: H film with laser light to locally e.g.
It is heated to about 200 ° C, which gives aS
A method of forming a polycrystalline silicon film by polycrystallizing an i: H film and using this as a semiconductor layer to form a drive circuit section has been studied.

According to this method, since the heating temperature at the time of forming the a-Si: H film is low, a good quality film can be obtained at a low temperature on a large glass substrate, and the heat treatment by laser light, that is, laser annealing is performed. Since the amorphous silicon film is instantaneously heated (for example, 23 nsec in the case of KrF) to be polycrystallized, heat is not transmitted to the glass substrate, and therefore, a large heat resistance is not required for the glass substrate, so an inexpensive material is used. Therefore, a large-area transmissive liquid crystal display can be manufactured.

By the way, a method of polycrystallizing an a-Si: H film by laser light is a-Si: H at the time of laser light irradiation.
Since hydrogen is released from the film, it is necessary to avoid damage to the film due to hydrogen release. For this reason, various studies have been conducted on the amount of laser beam irradiation energy and the irradiation method. Here, the present inventor, when irradiating the laser light along the periphery of the pixel region, irradiates the surface of the a-Si: H film with the laser light in a pulsed manner to form the polycrystallized drive circuit portion region. A method of forming a strip shape along the periphery of the pixel area and arranging the drive circuit portions in the drive circuit portion area is being studied.

However, this method has the following problems. That is, FIG. 10 is a diagram showing the relationship between the movement of the pulse of the laser light and the field effect mobility in the irradiation region, and the intensity distribution of the laser light is uniform in the irradiation surface direction, It is trapezoidal in the direction orthogonal to it. As shown in FIG. 10A, when there is no overlapping portion of the laser light pulses (pulse irradiation regions), the irradiation energy of the laser light given to the a-Si: H film is at the pulse boundary portion. Since there is no portion, a polycrystalline silicon region and an a-Si: H region are present. Here, the field effect mobility (mob) of polycrystalline silicon and a-Si: H
ilities) are, for example, 30 to 300 cm ² / V.
s, 0.3 to ¹ cm ² / V · s, and the field-effect mobility of polycrystalline silicon is larger than that of a-Si: H by two digits or more, so that the semiconductor elements included in the driver circuit portion have large variations.

Also, as shown in FIG. 10B, the field effect mobility varies due to the following reasons even when there are overlapping portions of laser light pulses. That is, as shown in FIG. 10B, after the a-Si: H film is polycrystallized in the first irradiation region, the second
When moving to the irradiation region, since the polycrystalline silicon region and the a-Si: H region are mixed in the second irradiation region, the lateral mode of laser light (laser power section) is uniform. However, the melting points of polycrystalline silicon and a-Si: H are 14
Since it is 14 ° C. and these melting points are different,
This is because it is difficult to make the field-effect mobility uniform at the joint of the laser light irradiation region, as can be seen from the field-effect mobility diagram in (b).

The present invention has been made under such circumstances, and an object of the present invention is to provide a method for manufacturing an LCD substrate in which the performance of the drive circuit section is not deteriorated.

[0015]

According to a first aspect of the present invention, there is provided a liquid crystal display comprising a light-transmissive substrate, a switching element arranged in a pixel region, and a drive circuit section for driving the switching element. In the method of manufacturing a substrate, a step of forming an amorphous semiconductor film on the light-transmissive substrate, and the amorphous semiconductor film is irradiated with a pulse of laser light in an island shape. A step of polycrystallizing the film, a step of generating a drive circuit section made of a semiconductor element in the irradiation region of the pulse of the laser light, and a wiring layer for electrically connecting the drive circuit section and the switching element. And a step of forming.

According to a second aspect of the present invention, a light-transmitting substrate is provided,
In a method of manufacturing a liquid crystal display substrate including a switching element arranged in a pixel region and a shift register for driving the switching element, an amorphous semiconductor film is formed on the light transmissive substrate. A step of irradiating the amorphous semiconductor film with a pulse of laser light in a plurality of islands to polycrystallize the amorphous semiconductor film; and a step of forming the shift register in a region irradiated with the pulse of the laser light. A step of forming by dividing, and a step of forming a wiring layer for electrically connecting between the divided shift registers and between the shift register and the switching element, at least a transistor of the shift register, It is characterized in that it is arranged in the irradiation area of the laser light pulse.

[0017]

For example, an amorphous semiconductor film is formed on the entire surface of the glass substrate by low pressure CVD or plasma CVD, and the amorphous semiconductor film around the pixel region is irradiated with a pulse of laser light in an island shape. As a result, the amorphous semiconductor film is polycrystallized in the region irradiated with the laser light, but the irradiation energy of the laser light is uniform. If so, the entire irradiation region is uniformly and favorably polycrystallized. Therefore, if the semiconductor device of the drive circuit unit is formed by repeating the film formation process and etching on the polycrystal semiconductor film, good performance can be obtained. A drive circuit unit is obtained.

[0018]

EXAMPLES Examples of the present invention will be described below. In the examples of the present invention, first, as shown in FIG. 1A, an amorphous semiconductor film is formed on a transparent substrate such as a glass substrate 1 by low pressure CVD. A certain amorphous silicon film 2 is formed. When this step is performed by the low pressure CVD method, for example, monosilane (SiH ₄ ) gas or disilane gas (Si ₂ H ₆ ) is used as a reaction gas, and the substrate temperature is 450 ° C. to 520 ° C., for example.
An amorphous semiconductor film is formed under the reaction condition of pressure Torr.

Next, as shown in FIG. 1 (b), laser light having a rectangular beam cross-sectional shape, for example, one side of which is several millimeters, is irradiated by the laser light irradiating unit 3 to the peripheral edge of the amorphous silicon film 2 along one vertical side. And the irradiation area 2 along one side
Irradiation is performed in an island shape so that the distance d between the two is, for example, about several millimeters, so that the laser light irradiation area 21 of the amorphous silicon film 2, for example, a large number of island areas is polycrystallized.
It is changed to polycrystalline silicon (polysilicon).

Regarding the irradiation of laser light, for example, one pulse of laser light having a power density (irradiation energy per unit area) sufficient to polycrystallize an amorphous silicon film by an excimer laser is applied. However, before that, one pulse or a plurality of pulses having a power density smaller than the power density may be irradiated. As the excimer laser, KrF (pulse width 23 nsec) or XeCl (pulse width 25 nsec) is used.
Etc. can be used.

Thereafter, as shown in FIGS. 1C and 2A, a predetermined film forming process and an etching process are repeated in the laser light irradiation region 21 (in the polycrystalline silicon region) of the substrate to drive a semiconductor device such as an LSI. The circuit unit 4 is generated. The drive circuit unit 4 includes a gate drive circuit unit 41 arranged vertically in FIG. 2 so as to drive a gate electrode of a TFT described later.
And a source drive circuit portion 42 arranged side by side so as to drive the source electrode of the TFT.

In this embodiment, a group of gate drive circuit units 41 arranged vertically in a row constitutes a gate shift register, and a group of source drive circuit units 42 arranged horizontally in a line. The source shift register is constituted by the above. That is, as shown in FIG. 2B, both the gate shift register and the source shift register are divided into islands, and a drive circuit unit 4 (driving circuit) including a transistor in each island region (irradiation region 21) is provided. Circuit part 41 or drive circuit part 42)
Is formed, and only the wiring layer 40 is formed between the island regions, and the drive circuit section 4 is not present. 5
Reference numeral 1 is a wiring layer such as a gate bus line and a source bus line described later. Further, in the present invention, at least the transistor of the shift register may be formed in the island region so as not to cover the edge portion of the island region.

Further, a predetermined film forming process and etching are repeatedly performed in the pixel region 50 of the amorphous silicon film 2 to thereby perform a TFT (Thin Fi) functioning as a switching element.
lmTransistors) 5 are formed by arranging them in the vertical and horizontal directions by the number corresponding to the number of pixels. Then, it is necessary to perform wiring for electrically connecting the drive circuit portions 4 to each other and wiring for electrically connecting the TFT 5 and the drive circuit portion 4. In this wiring step, for example, the TFT 5 is connected. In the step of forming, a wiring layer 51 made of, for example, aluminum such as a gate bus line and a source bus line is formed at the same time when the gate electrode and the source electrode are formed by repeating film formation processing, linography, and etching (see FIG. 1D). It can be performed by forming. Wiring layer 5
1 may be formed at the same time as the electrodes of the semiconductor element of the drive circuit section 4 are formed, or the electrodes of the drive circuit section 4 and the TFT 5 may be formed at the same time and at the same time when the electrodes are formed. It may be formed after the circuit unit 4 is generated.

Further, the semiconductor element and the T forming the drive circuit unit 4
Various device types such as a planar type and an inverted stagger type can be selected for the FT5. Therefore, even if the drive circuit section 4 and the TFT 5 are formed on the amorphous silicon film 2, depending on the type of device, electrodes, etc. May be located under the amorphous silicon film 2. Further, in the above example, the TFT 5 is generated after the drive circuit unit 4 is generated, but the TFT 5 may be generated first, or the drive circuit unit 4 and a part of the TFT 5 may be generated at the same time. .
In this way, the LCD substrate 10 is manufactured, and the LCD
After the transparent substrate is attached to the substrate 10, the liquid crystal is enclosed to form the LCD panel.

In the above embodiment, the amorphous silicon film 2 is irradiated with a pulse of laser light in an island shape along the periphery of the substrate to form a large number of laser light irradiation areas 21 (island areas). Since each island region is polycrystallized, the irradiation energy of the laser light is uniform in the irradiation region 21 of the laser light. Therefore, by adjusting the irradiation energy of the laser light to an appropriate size, which island region is In that region, too, polycrystallization is uniformly and favorably performed. Therefore, the semiconductor element forming the drive circuit section 4 formed by repeating the film forming process and the etching on the region, that is, on the polycrystalline silicon film, has good performance.
In the manufacture of the D substrate, it is possible to realize the generation of the drive circuit unit using the amorphous silicon film and the wiring by the film formation process of the drive circuit unit and the TFT, so that the LCD substrate is easily manufactured.

In the above, the method for forming the amorphous silicon film 2 is not limited to the low pressure CVD, but may be formed by plasma CVD. In this case, for example, monosilane gas and hydrogen gas are used, and the reaction temperature is 180 ° C. 300 ° C,
The film can be formed under the condition of a pressure of 0.8 Torr. Here, when plasma CVD is used, hydrogen is taken into the amorphous silicon film to form an a-Si: H film (hydrogenated amorphous silicon film). In the process, it is desirable to irradiate the laser light in the following manner, for example, in order to suppress damage to the film due to rapid release of hydrogen during laser annealing.

That is, the output energy of the laser beam is aS
i: H energy is lower than the energy required for polycrystallizing, and is first made small and irradiated with one pulse or a plurality of pulses, and then the energy is increased successively, for example, with one pulse or a plurality of pulses, respectively. As described above, the hydrogen in the a-Si: H film is gradually released, and then the irradiation region is polycrystallized by irradiating, for example, one pulse with an energy equal to or higher than the energy required for the polycrystallization at the end. Subsequently, another region is similarly irradiated with laser light to form a polycrystalline silicon region in an island shape. When multiple pulses of laser light are emitted for each energy, the amount of hydrogen released is monitored, and after that amount does not change much for each pulse, the energy is set to the next large value and the same applies. It is desirable to perform the process of.

According to such a method, since hydrogen corresponding to a small energy is sequentially released to hydrogen corresponding to a large energy, the hydrogen in the a-Si: H film is released stepwise, and a Since the hydrogen content in the film is already small when a large amount of energy required to polycrystallize the —Si: H film is applied, the film is not damaged even if the hydrogen is released all at once.

Next, a laser annealing apparatus and method for irradiating the amorphous silicon film 2 with laser light to polycrystallize it will be described in detail. This apparatus uses an air support mechanism 6 utilizing air pressure as a base of the apparatus as shown in FIGS. 3 and 4, and the air support mechanism 6 includes a support plate 61 made of a rigid material such as metal. It is supported by an air suspension in a state of being floated by air pressure, and the air pressure is controlled so that it is always horizontal. A processing chamber, for example, an airtight cylindrical vacuum chamber 63 made of aluminum is placed and fixed on the support plate 61 via a support base 62. In the vacuum chamber 63, as described above, Further, a mounting table 64 is arranged to hold the substrate 20 having the amorphous silicon film on the glass substrate so that the surface to be processed faces downward.
Further, an exhaust pipe 65 connected to, for example, a vacuum pump (not shown) is connected to the vacuum chamber 63, and mass spectrometry for measuring the amount of hydrogen generated from the amorphous silicon film on the substrate 20. A total of 66 are installed, and the substrate 20 is further connected to the vacuum chamber and the outside (atmosphere atmosphere).
A gate valve G (not shown in FIG. 4) for carrying in and out is provided between and. And the vacuum chamber 6
A window 67 made of, for example, synthetic quartz glass is formed in the bottom wall of the glass 3 so that a laser beam described later can be transmitted therethrough.

On the support plate 61 below the vacuum chamber 63, a laser beam irradiation unit 7 and a moving mechanism 70 for moving the laser beam irradiation unit 7 in the horizontal direction, for example, the X direction and the Y direction, are arranged. ing. The moving mechanism 70 includes, for example, an X moving unit 72 that moves along a rail 71 installed on the support plate 61 in the X direction, and an X moving unit 72.
The laser beam irradiation unit 7 is mounted on the Y moving unit 74. The Y moving unit 74 is configured to move along a rail 73 installed on the moving unit 72 in the Y direction.

The laser light irradiation unit 7 irradiates a laser light having a wavelength of 248 nm transmitted from an excimer laser light oscillation source (not shown) through an optical system beam homogenizer in the Z direction, that is, toward the bottom surface of the vacuum chamber 63. The moving mechanism 70 moves in the X and Y directions to scan and irradiate the surface to be processed of the substrate 20, for example.
Laser light passed through the engineering beam homogenizer,
The intensity distribution in the laser beam is uniform with respect to the irradiation surface direction and has a trapezoidal shape in a direction orthogonal to the irradiation surface direction, and laser irradiation can be performed while scanning the surface to be processed using this laser light. .

Next, a method of polycrystallizing the amorphous silicon film 2 using the above-mentioned apparatus will be described. First, the gate valve G is opened and the substrate 20 is moved by a transfer mechanism (not shown).
Is placed on a mounting table 64 in the vacuum chamber 63 with the surface to be processed facing downward, and then the gate valve G is closed, and then the inside of the vacuum chamber 63 is pressurized via the exhaust pipe 65 by a vacuum pump (not shown). Evacuate to a vacuum atmosphere of 2.5 × 10 ⁻⁷ Torr. After that, the laser light irradiation unit 7 is intermittently moved by the moving mechanism 70, and the laser light transmitted from the excimer laser light oscillation source is irradiated with the laser light irradiation unit 7.
The amorphous silicon film on the substrate 20 is irradiated via

Regarding the method of irradiating the amorphous silicon film with laser light, for example, one pulse of laser light pulse having a pulse width of 23 nsec is irradiated, and then the moving mechanism 70 is driven to irradiate the irradiation region (FIGS. 1 and 2). Similarly, a region distant from the inside 21) is irradiated with a predetermined distance, and by controlling the moving mechanism 70 in this manner, the laser light is irradiated vertically and horizontally in an island shape along the peripheral edge of the substrate 20.

When an a-Si: H film is formed on the glass substrate by plasma CVD, the irradiation energy may be increased stepwise when the a-Si: H film is irradiated with laser light. As mentioned above, the results of experiments performed to confirm the advantages of the method are shown in FIGS. In the figure, the vertical axis represents the output current of the mass spectrometer (corresponding to the amount of hydrogen released), and the horizontal axis represents the irradiation energy of the laser beam. In this experiment, the a-Si: H film was divided into 6 regions, and As shown in Table 1, the irradiation energy of the laser beam (oscillation side) is increased stepwise for each of the regions 1 to 6, and the hydrogen release amount is examined.

[0035]

[Table 1]However, in FIGS. 5 and 6, the film thickness of the a-Si: H film is 500, respectively.
Angstrom, 300 Angstrom, 2
0 Hz and 10 Hz are laser pulse frequencies.
Also, the optical path length from the laser oscillation source to the substrate is 230 mm,
Beam size is 0.65 cm x 0.65 cm, vacuum chamber
In the case of Fig. 5, the pressure in the chamber is 1.0 x 10 ^-7Torr,
In the case of FIG. 6, 2.0 × 10^-7Torr. This experiment
As you can see from the results, increase the irradiation energy stepwise
By doing so, the amount of hydrogen released does not increase sharply.
Damage to the membrane due to release is suppressed.

In the above, in the present invention, the irradiation method of the laser beam is not limited to the above-mentioned embodiment, and for example, after irradiating one pulse at a certain irradiation energy in an island shape,
A method of sequentially irradiating these irradiation regions with a larger irradiation energy may be used.

The laser light irradiation method is, for example, an optical system in which a large number of laser light beams are arranged in a line at intervals and the laser light beams are simultaneously irradiated to the amorphous silicon film. A large number of island-shaped polycrystalline regions may be formed simultaneously. Furthermore, FIG. 7 (a)
As shown in FIG. 7, the amorphous semiconductor film 2 may be irradiated with a band-shaped laser beam having a cross-sectional shape of, for example, about several millimeters × 100 millimeters, or as shown in FIG. A laser beam having a L-shaped cross-section may be irradiated on. That is, in the present invention, irradiation with a pulse of laser light in an island shape means that a plurality of island-shaped irradiation areas are formed.
The case of forming individual island-shaped irradiation regions is equivalent, and the shape and size thereof may be selected by appropriately designing the optical system.

Then, as shown in FIGS. 7 (a) and 7 (b), if a wide irradiation area 51 is formed and a plurality of driving circuit portions such as gate drivers or source drivers are formed therein, the optical system is designed. This is preferable because it is easy, and the position of the irradiation region of the laser beam and the mask mask pattern of lithography can be easily matched, and the throughput is increased.

In the present invention, the switching element for controlling the on / off of the voltage to the pixel electrode is not limited to the TFT, and the amorphous semiconductor film is polycrystallized to perform switching on the polycrystallized film. Elements may be created.

[0040]

As described above, according to the present invention, the amorphous semiconductor film is irradiated with a pulse of laser light in an island shape to be polycrystallized, and at least the semiconductor element of the drive circuit portion is provided in the irradiation region. Since it is formed, the entire irradiation area is uniformly and favorably polycrystallized, and therefore, good performance can be obtained without variation in any driving circuit section. This results in LC
In manufacturing the D substrate, since it is possible to realize the generation of the drive circuit unit using the amorphous semiconductor film and the wiring by the film formation process of the switching circuit in the drive circuit unit and the pixel region, the pixel region and the drive region can be processed in the same process. And the LCD substrate can be manufactured easily and at low cost.

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing an embodiment of the present invention.

FIG. 2A is a plan view showing a relationship between a laser light irradiation region and a drive circuit portion formation region.

FIG. 2B is a plan view showing a drive circuit unit and wiring.

FIG. 3 is a vertical cross-sectional side view showing an example of a laser annealing apparatus used in an example of the present invention.

FIG. 4 is a perspective view showing a laser annealing apparatus used in an example of the present invention.

FIG. 5 is a characteristic diagram showing a relationship between a laser beam irradiation energy density and a hydrogen release amount in a hydrogenated amorphous silicon film forming process.

FIG. 6 is a characteristic diagram showing a relationship between a laser beam irradiation energy density and a hydrogen release amount in a hydrogenated amorphous silicon film forming process.

FIG. 7 is an explanatory diagram showing a laser light irradiation region according to another embodiment of the present invention.

FIG. 8 is a configuration diagram schematically showing a structure of a liquid crystal display substrate.

FIG. 9 is a perspective view showing a liquid crystal panel.

FIG. 10 is an explanatory diagram showing the relationship between the overlapping state of laser light pulses and the electric field efficiency mobility in the conventional method.

[Explanation of symbols]

 1 Glass Substrate 2 Amorphous Silicon Film 3 Laser Light Irradiation Sections 4, 41, 42 Drive Circuit Section 5 TFT 50 Pixel Region 63 Vacuum Chamber 7 Laser Light Irradiation Section 70 Moving Mechanism

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[Procedure amendment]

[Submission date] January 7, 1994

[Procedure Amendment 1]

[Document name to be corrected] Drawing

[Correction target item name] All drawings

[Correction method] Change

[Correction content]

[Figure 1]

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[Procedure Amendment 2]

[Document name to be amended] Statement

[Name of item to be corrected] Brief description of the drawing

[Correction method] Change

[Correction content]

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing an embodiment of the present invention.

FIG. 2 is an explanatory diagram showing a drive circuit portion formation region.

FIG. 3 is a vertical cross-sectional side view showing an example of a laser annealing apparatus used in an example of the present invention.

FIG. 4 is a perspective view showing a laser annealing apparatus used in an example of the present invention.

FIG. 5 is a characteristic diagram showing a relationship between a laser beam irradiation energy density and a hydrogen release amount in a hydrogenated amorphous silicon film forming process.

FIG. 6 is a characteristic diagram showing a relationship between laser beam irradiation energy density and hydrogen release amount in a hydrogenated amorphous silicon film forming process.

FIG. 7 is an explanatory diagram showing a laser light irradiation region according to another embodiment of the present invention.

FIG. 8 is a configuration diagram schematically showing a structure of a liquid crystal display substrate.

FIG. 9 is a perspective view showing a liquid crystal panel.

FIG. 10 is an explanatory diagram showing the relationship between the overlapping state of laser light pulses and the electric field efficiency mobility in the conventional method.

Claims (2)

[Claims] 1. A method of manufacturing a liquid crystal display substrate comprising a switching element arranged in a pixel region and a drive circuit section for driving the switching element on a light-transmissive substrate. A step of forming an amorphous semiconductor film on the substrate, and a step of irradiating the amorphous semiconductor film with a pulse of laser light in an island shape to polycrystallize the amorphous semiconductor film; And a step of forming at least a semiconductor element of the drive circuit section in a light pulse irradiation region, and a step of forming a wiring layer for electrically connecting the drive circuit section and the switching element. And a method for manufacturing a liquid crystal display substrate. 2. A method of manufacturing a liquid crystal display substrate comprising a switching element arranged in a pixel region and a shift register for driving the switching element on a light transmissive substrate, the method comprising: Forming an amorphous semiconductor film on a substrate; irradiating the amorphous semiconductor film with a plurality of island-shaped pulses of laser light to polycrystallize the amorphous semiconductor film; A step of dividing and generating the shift register within an irradiation region of a pulse of laser light, and a step of forming a wiring layer for electrically connecting the divided shift registers and between the shift register and the switching element And at least a transistor of the shift register is
A method for manufacturing a liquid crystal display substrate, characterized in that the liquid crystal display substrate is arranged in an irradiation region of a pulse of the light.