JPH06205158A - Solid-state image pickup device - Google Patents

Abstract

PURPOSE:To prevent crosstalk between signals of both elements by making a 1st element separate means between 1st photoelectric conversion elements and a 2nd element separate means between 2nd photoelectric conversion elements different from each other in configuration, thereby excellently detecting an optical signal over a wide wavelength region from a visible ray region to an invisible ray region. CONSTITUTION:The thickness of an epitaxial layer 103 is selected to obtain an excellent sensitivity from a visible region to an infrared ray region. Infrared ray elements are so structured that a high concentration imbeded layer 106 of opposite conduction type to that of the substrate is formed not to discharge all carriers generated at a position deeper from the surface to the substrate but to be collected by a photodiode. A high concentration implantation layer 105 of the same conduction type as that of the substrate is formed between visible elements and the infrared ray elements. Carriers generated at a deeper position from the surface and going to be leaked to the visible elements are absorbed in the high concentration implantation layer at the time of passing the carriers there through and discharged to the substrate side. Thus, leakage to the adjacent elements is prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device used in an image information processing device such as a facsimile machine, an image scanner, a copying machine, etc., and more particularly to an optical signal in an invisible light region as well as a visible light. It relates to a solid-state imaging device for conversion.

[0002]

2. Description of the Background Art A conventional solid-state imaging device is a charge-coupled device (CCD) type, a MOS type, or the specification of U.S. Pat. No. 4,791,469 assigned to the inventors Tadahiro Omi and Nobuyoshi Tanaka. Amplification type devices are known in which a capacitive load is connected to the emitter of the described phototransistor.

Recently, its applications have been diversified, and solid-state image pickup devices having new functions are required.

For example, in addition to high image quality and colorization of a copying machine, it is required to recognize an invisible image and reproduce and record it.

Examples of such an image, that is, an invisible light image, include an image formed of ink having a characteristic of absorbing infrared rays.

[0006]

Generally, a sensor for detecting invisible light is an individual device, and some new design concept is required to use detection of an image or the like together with a sensor for detecting visible light.

As a basic design concept, the present inventors first found out a technique of monolithically incorporating a sensor for detecting visible light and a sensor for detecting invisible light in one semiconductor chip.

However, there is room for further improvement in the above technique.

[0009]

It is an object of the present invention to favorably detect an optical signal in a wide wavelength range from the visible light region to the invisible light region,
It is an object of the present invention to provide a small solid-state imaging device capable of preventing crosstalk between both signals.

In the solid-state image pickup device for photoelectrically converting an optical signal into an electric signal, a plurality of first photoelectric conversions for converting an optical signal in the visible light region into a first electric signal including a plurality of color separation signals are provided. The element and a second photoelectric conversion element for converting an optical signal in the invisible light region into a second electric signal are provided on the same substrate, and the first photoelectric conversion element between the plurality of first photoelectric conversion elements is provided. And a second element separating means between the first photoelectric conversion element and the second photoelectric conversion element have different configurations. .

[0011]

Since the elements can be separated according to the carrier generation position due to the difference in wavelength, effective element separation can be performed with almost no deterioration in resolution.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention relates to a separation structure between first photoelectric conversion elements for converting an optical signal in the visible light region into a plurality of color separation signals, and an optical signal in the invisible light region to an electric signal. And a separation structure between the second photoelectric conversion element and the first photoelectric conversion element.

By doing so, the visible light signal and the invisible light signal can be efficiently obtained, and the crosstalk between both signals can be reduced. In this way, a wide range of optical signals from the visible light region to the invisible light region can be satisfactorily detected, and a high-performance solid-state imaging device can be obtained.

Before describing the element isolation structure used in the present invention, the arrangement of the first photoelectric conversion element and the second photoelectric conversion element, which are prerequisites, will be described with an example.

On the main surface side of the solid-state image pickup device 1 of FIG. 1, a first photoelectric conversion element (R, G, B) for converting an optical signal in the visible light region into an electric signal and an optical signal in the invisible light region are provided. The second photoelectric conversion elements (IR) for converting into electric signals are arranged in a substantially straight line.

In the present invention, the separation structures 22 and 23 between the first photoelectric conversion elements and the separation structure 21 between the first and second photoelectric conversion elements are different, and the arrangement of these elements is different. It is not limited to the one shown in FIG.

The structure of the separating means used in the present invention is 1) a semiconductor region having the same conductivity type as the semiconductor layer to be separated and having a high impurity concentration, 2) a semiconductor region having the opposite conductivity type to the semiconductor layer to be separated, Structures such as 3) separation by a dielectric and 4) separation by a trench groove are used.

More preferably, the distance between the elements for visible light is 1 above.
It is desirable to use the above 2 or 3 or 4 between the visible light and the invisible light element.

As the photoelectric conversion element of the present invention, a photovoltaic element such as a photodiode or a phototransistor or a photoconductive element is preferably used.

As the photoelectric conversion element for converting an optical signal in the visible light region into an electric signal, an element made of a material capable of selectively absorbing only the optical signal in the visible light region or transmitting the visible light region. However, an element having a filter that blocks light in a wavelength region used for photoelectric conversion in another photoelectric conversion element in the invisible light region is used.

Specifically, in order to obtain a black-and-white signal, the constituent materials of the elements are selected so as to have a selective sensitivity in the wavelength region from 400 nm to 700 nm as the visible light region, or the above-mentioned wavelength region is selected. The element is provided with a filter that selectively transmits light. Further, in order to obtain an optical signal in a specific region in the visible light region, an element is made of a material having a selective sensitivity in the specific region, or light in the specific region is selectively transmitted. The element is equipped with a filter.

Then, for example, red (R), green (G),
In order to obtain a color signal such as blue (B), an element (R element) having a selective sensitivity in the R region (for example, a wavelength region of 580 nm to 700 nm) and a G region (for example, 480 nm).
nm element (G element) and B area (for example, 400 nm to 48 nm) with selective sensitivity in the wavelength range of 580 nm to 580 nm.
A plurality of types of elements (element B) having selective sensitivity in the wavelength region of 0 nm) are used.

Of course, in this case as well, the material itself is R, G,
Each element may be configured by one that selectively absorbs light in each region of B, that is, one that has selective sensitivity, or each element having sensitivity in all regions of R, G, and B may have R, G, Each element is configured by including a filter that selectively transmits light in the B region.

FIG. 2 is a graph showing typical spectral characteristics of transmitted light of a filter, and the relative sensitivity on the vertical axis corresponds to the transmittance of visible light. When each element is given a selective sensitivity by selecting the material, for example, each element is formed by using a material having a light absorption characteristic corresponding to the relative sensitivity as shown in FIG.

Further, in the present invention, the visible light region, the invisible light region, and the R, G, B wavelength regions are not clearly distinguished by the value of the wavelength, and photoelectric conversion used in the present invention is performed. The elements are UV, blue, to get each required signal
It suffices that the green light, the red light, and the infrared light are photoelectrically converted by a necessary amount, and unnecessary light is not substantially photoelectrically converted.

On the other hand, as a photoelectric conversion element for converting an optical signal in the invisible light region into an electric signal, for example, an element having a selective sensitivity to ultraviolet rays or infrared rays is used. In this case as well, the material itself constitutes an element with selective sensitivity to light in the invisible light region, or a material having sensitivity in a wide wavelength region including the invisible light region is added to the invisible light region. It is desirable to combine filters having a selective transmittance with respect to light.

For example, FIG. 3 is a graph showing typical spectral characteristics of transmitted light of the above filter, in which the relative sensitivity on the vertical axis corresponds to the transmittance of invisible light. Here, an example of a filter having selective sensitivity in the infrared region (for example, a wavelength region of 750 nm or more) is given, but the present invention is not limited to this.

The solid-state image pickup device of the present invention can construct a color line sensor by periodically arranging R, G, B, and IR elements in a line as shown in FIG. Preferably, an element in which each pixel in the resolution as a color signal has a selective sensitivity in the R region (R element), an element having a selective sensitivity in the G region (G element),
It is configured to include an element (B element) having a selective sensitivity in the B region and an element (IR element) having a selective sensitivity in the non-visible light region. A three-dimensional image or a two-dimensional image is used to generate an optical signal to be detected, and a typical example of the two-dimensional image is a plane image of a document or the like. Therefore, when used in a system for reading an image of a document, it is desirable to provide an illumination means for illuminating the document surface. Examples of such illumination means include light sources such as light emitting diodes, xenon lamps, and halogen lamps. FIG. 4 shows typical light emission distribution characteristics of the light source. The light source is not limited to the one having the characteristics shown in FIG. 4 as long as it can generate the light in the required wavelength region according to the optical signal to be detected.
If at least a light source that emits light having the characteristics shown in FIG. 4 is used, infrared light in the R, G, B and invisible light regions can be obtained.

FIG. 5 is a schematic top view showing the arrangement of photoelectric conversion elements different from that in FIG. 1, and photoelectric conversion for converting an optical signal in the visible light region into a first electric signal containing a plurality of color separation signals. The element 2 and the photoelectric conversion element 3 for converting an optical signal in the invisible light region into a second electric signal are arranged in parallel in a plurality of arrays in the AA ′ direction.

That is, the first array is for generating a plurality of color separation signals in the visible light region, and the second array is for generating signals in the invisible light region. Therefore, in the example of FIG. 5, the second array is composed only of photoelectric conversion elements that generate signals in the invisible light region.
One element that makes up the first array (R or G or B)
May be arranged as a second array. Here again, the element isolation structure 21 and the element isolation structures 22 and 23 are different.

[0031]

(Embodiment 1) FIG. 6 shows an embodiment 1 according to the present invention.
2 shows the solid-state image pickup device of FIG. In FIG. 6, the thickness of the epitaxial layer 103 is, for example, about 10 μm so that good sensitivity can be obtained from the visible region to the infrared region. The structure of each visible element is the same. The structure of the infrared element is a reverse-type high-concentration embedding of the substrate for forming an electric field in the surface direction so that all carriers generated deep from the surface are not discharged to the substrate side but are collected by the photodiode. The layer 106 is formed. In FIG. 6, between the visible element and the infrared element,
A high-concentration buried layer 105 having the same conductivity type as the substrate is formed. The carriers generated at a depth from the surface and trying to leak into the visible element are absorbed by the high-concentration buried layer when passing through the high-concentration buried layer, and discharged to the substrate side. Therefore, it is possible to prevent leakage into the adjacent element.

(Second Embodiment) FIG. 7 shows a solid-state image pickup device according to a second embodiment of the present invention. In FIG.
The thickness of the epitaxial layer 103 is, for example, about 10 μm so that good sensitivity can be obtained from the visible region to the infrared region. In this embodiment, the conductivity type of the substrate is the same as that of the epitaxial layer. The structure of the visible element will be described. When the epitaxial layer and the substrate have the same conductivity type, an electric field from the epitaxial layer side to the substrate direction is not formed, so in order to prevent leakage of carriers generated deep from the surface to adjacent elements, A high-concentration buried layer 107 having a conductivity type opposite to that of the substrate and a diffusion layer 108 from the surface for applying a potential to the buried layer are formed. With this structure, the characteristics of the visible element are the same as those of the first embodiment. On the other hand, in the structure of the element for infrared rays, carriers generated at a deep position from the surface are collected in the surface direction by the electric field from the substrate side to the epitaxial layer direction, so that good infrared sensitivity is realized.

Further, the diffusion layer 108 is formed between the visible light element and the infrared light element, and can prevent the leakage of carriers between them.

(Third Embodiment) FIG. 8 shows a solid-state image pickup device according to a third embodiment of the present invention. In this embodiment, the structure of the visible element is different from that of the second embodiment. Instead of forming the high-concentration buried layer having the opposite conductivity type to the substrate, the high-concentration layer 109 having the same conductivity type as the substrate is formed by injecting ink from the surface. In this structure, carriers generated in a deep portion of the visible element are prevented from moving toward the photodiode on the surface by the potential barrier of the high concentration layer 109. In addition, regarding the separation of the visible light element and the infrared light element, the same effect as that of the second embodiment can be obtained by forming the high-concentration buried layer 105 and the diffusion layer 108 of the conductivity type opposite to that of the substrate.

(Embodiment 4) FIG. 9 shows a solid-state image pickup device according to Embodiment 4 of the present invention. In this embodiment, in order to form a deep high-concentration diffusion layer from the surface, a structure is shown in which the diffusion layer is formed after grooving the surface.
By using this structure, the separation distance between the visible element and the infrared element can be significantly reduced. The diffusion layer having such a structure can be applied to all the other embodiments.

(Fifth Embodiment) FIG. 10 shows a solid-state image pickup device according to a fifth embodiment of the present invention. Compared to the first embodiment, a diffusion layer 108 for separation is formed between the visible element and the infrared element.

(Sixth Embodiment) FIG. 11 is a schematic top view showing a solid-state image pickup device according to a sixth embodiment of the present invention. FIG. 12 shows a cross section taken along line ZZ 'in FIG.

Although the filters R, G, B and IR are shown in FIG. 11, they are omitted in FIG.

In this embodiment, the separation between visible elements is n ⁺
This is performed in the area 102, and p is used between the visible element and the infrared element.
^- it is carried out in the region 108 and the p ⁺ region 105.

(Embodiment 7) FIG. 13 is a schematic sectional view of a solid-state image pickup device according to the present embodiment. This embodiment is different from the sixth embodiment only in its sectional structure.

Here, since the isolation region is formed by impurity diffusion after forming the trench groove in the element isolation region, a narrow and deep isolation region can be obtained.

(Embodiment 8) FIG. 14 is a schematic top view of a solid-state image pickup device according to this embodiment.
The effective area of the element is increased.

Therefore, it is effective when it is desired to improve the sensitivity to invisible light. Further, by making the lengths of the visible light element and the invisible light in the sub-scanning direction equal, signal processing in the sub-scanning direction becomes easy.

(Embodiment 9) In FIG. 15, a visible light element array consisting of R, G and B and an IR infrared element array are arranged in two lines, and the R, G, B and IR elements are arranged. And the interval is 1
The line is separated. In this embodiment, both visible and infrared have high sensitivity, and visible and infrared can be sufficiently separated.

(Embodiment 10) FIG. 16 shows Embodiment 1 of the present invention.
2 is a schematic top view showing a solid-state imaging device according to 0. FIG.

In this example, the visible light elements are separated from each other as shown by reference numeral 102 in FIG. 12, while the visible light elements and the invisible light elements are separated by a distance. Substantial element isolation is achieved by making f sufficiently large.

(Scanning Circuit) Embodiments 1 to 9 described above
It is desirable that the solid-state image pickup device of (1) be configured as an integrated circuit in which a scanning circuit as a readout circuit is integrally integrated on the same substrate together with a pixel array including photoelectric conversion elements. As such a scanning circuit, a CCD type shift register, a CCD type transfer gate, a shift register using a transistor, and a transfer gate using a transistor are used alone or in appropriate combination. Further, a storage capacitor for storing the photoelectrically converted electric signal may be provided if necessary.

In the configuration of FIG. 17, after the signals of the photodiodes shown in FIG. 1 are transferred to the CCD register, the signals are sequentially read out in a serial format in the order of R, G, B, IR.

FIG. 13 shows a configuration which is preferably used for the one shown in FIG. 5, and among the signals of the respective photodiodes,
After transferring the R, G, and B signals to the visible CCD register and the IR signal to the infrared CCD register on the opposite side,
The G and B serial format outputs and the IR output are individually read in parallel.

FIG. 19 shows still another configuration. The signals of the respective photodiode arrays are simultaneously transferred to the respective storage capacitors corresponding to the respective photodiodes, temporarily stored therein, and then sequentially read by the selective scanning circuit. At this time, since the output from the storage capacitor can be independently performed for each photodiode, each signal of R, G, B, and IR can be read in a parallel format.

FIG. 20 shows still another configuration, in which visible R, G, B signals and infrared IR signals are read out separately in the upper and lower parts.

(Image Information Processing Apparatus) The image information processing apparatus according to the present invention will be described below.

FIG. 21 is a block diagram thereof, in which the signal from the solid-state image pickup device (sensor) 1 of each of the above-described embodiments is input to the image processing unit 1003 and the discrimination unit 1001 as the discrimination means. Then, the information is reproduced and recorded by the recording unit 1005 driven by the recording control unit 1004.

The sensor 1 uses the R
(Red), G (green), B (blue), and in addition, it is decomposed into an infrared component having a sensitivity of about 1000 nm and read at a pixel density of 400 dpi.

The sensor output is subjected to so-called shading correction using a white plate and an infrared light reference plate, and each 8b
As the image signal of it, the identification unit 1001 and the image processing unit 1
003 is input. The image processing unit 1003 performs processing such as variable-magnification masking and OCR performed in a general color copying machine, and generates four color signals of C, M, Y and K which are recording signals.

On the other hand, the identifying section 1001 detects a specific pattern in the original document, which is a feature of the present invention, and outputs the result to the recording control section 4 and, if necessary, processes it into a recording signal such as filling with a specific color. In addition, recording on the recording paper by the recording unit 1005 or by stopping the recording operation, faithful image reproduction is prohibited.

Next, the image pattern to be detected in the present invention will be outlined with reference to FIGS.

FIG. 22 shows that the light is almost transparent in the visible region.
It shows the spectral characteristics of a transparent dye that absorbs infrared light near 0 nm, for example, SIR-159 from Mitsui Toatsu Chemicals, Inc.
Etc. are typical.

FIG. 23 shows an example of a pattern made by using the transparent ink composed of the transparent infrared absorbing dye. That is, one side is approximately 120 μm on a triangular pattern recorded with a specific, ie, infrared-reflecting ink a.
The square minute pattern b is printed with the transparent ink. Since the pattern has almost the same color in the visible range as shown in the figure, the pattern of b cannot be recognized by human eyes, but can be detected in the infrared range. Incidentally, for the sake of the following description, a pattern of about 120 μm opening is shown as an example, but if this area b is read at 400 dpi, it becomes about 4 pixels in size as shown. The method of forming the pattern is not limited to this example.

The identifying unit 10 shown in FIG. 21 is further described with reference to FIG.
The details of 01 will be described. 24, 10-1 to 10
-4 is an image data delay unit composed of FiFo,
Image data of 32 bits (8 bits × 4 components) is delayed by one line.

First, the input image signal is the flip-flop 11
-1, 11-2 holds the pixel data of A delayed by 2 pixels, the C pixel data further delayed by 2 lines in the memories 10-1, 10-2, and further 2 by the FFs 11-3, 11-4.
The target pixel data X delayed by the number of pixels is set to FF11-5,
Similarly, the pixel data of B delayed by two pixels in 11-6 and the pixel data of D are simultaneously input to the determination unit 12. Here, the neighborhood A of the pixel position of interest X,
The positional relationship among the B, C, and D4 pixels is as shown in FIG.

That is, if the pixel X of interest is reading the ink in the portion b in FIG. 23, the above A, B,
Both C and D are reading the image of a pattern located around it.

(Judgment Algorithm) The R component which constitutes the pixel signal of A is A _R , the G component is A _G , the B component is A _B , and the infrared component is A _IR. Each component of R, G, B, and IR which constitutes a pixel signal is defined. And
The average values Y _R , Y _G , Y _B and Y _IR of the same color components are calculated by the following formula.

[0064]

[Outer 1]

The determination of the target pattern follows the difference between the average value Y and the target pixel X obtained by the above equations. That is, ΔR = | Y _R −X _R |, ΔG = | Y _G −X _G |, ΔB =
When | Y _B −X _B | and ΔIR = Y _IR −X _IR , if ΔR <K ΔG <K (K and L are constants) ΔB <K ΔIR> L, then it is determined that there is a pattern.

That is, it can be determined that the pixel of interest has a small difference in tint in the visible region as compared with its peripheral pixels and that the infrared characteristic has a difference of a constant L or more.

FIG. 26 shows an example of hardware that implements the above determination algorithm. The adder 121 simply adds the respective color components of 4 pixels and outputs the upper 8 bits thereof to obtain Y _R , Y _G , Y _B and Y _IR , respectively. Subtractor 1
22 obtains the difference from each component of the pixel signal of interest,
The absolute values of the three components of R, G and B are compared with a constant K as a reference signal by comparators 123, 124 and 125. On the other hand, the infrared component is compared with a constant L as a reference signal by a comparator 126. The output of each comparator is AND gate 12
When the data is input to 7 and is "1" at the output terminal, it means that the pattern is determined.

[0068]

As described above, according to the present invention, it is possible to provide a small apparatus capable of detecting an optical signal in a wide wavelength range from visible light to invisible light.

[Brief description of drawings]

FIG. 1 is a schematic top view of a solid-state imaging device according to an embodiment of the present invention.

FIG. 2 is a diagram showing a spectral characteristic of a color filter used in the present invention.

FIG. 3 is a diagram showing a spectral characteristic of a visible light cut filter used in the present invention.

FIG. 4 is a diagram showing a light emission characteristic of a light source used in the present invention.

FIG. 5 is a schematic top view of a solid-state imaging device according to another embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view of the solid-state imaging device according to the first embodiment of the present invention.

FIG. 7 is a schematic sectional view of a solid-state imaging device according to a second embodiment of the present invention.

FIG. 8 is a schematic sectional view of a solid-state imaging device according to a third embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view of a solid-state imaging device according to Example 4 of the present invention.

FIG. 10 is a schematic cross-sectional view of a solid-state imaging device according to Example 5 of the present invention.

FIG. 11 is a schematic top view of a solid-state imaging device according to Example 6 of the present invention.

FIG. 12 is a schematic sectional view of a solid-state imaging device according to a sixth embodiment of the present invention.

FIG. 13 is a schematic cross-sectional view of a solid-state imaging device according to Example 7 of the present invention.

FIG. 14 is a schematic top view of a solid-state imaging device according to Example 8 of the present invention.

FIG. 15 is a schematic top view of a solid-state imaging device according to Example 9 of the present invention.

FIG. 16 is a schematic top view of a solid-state imaging device according to example 10 of the invention.

FIG. 17 is a block diagram showing a scanning circuit of the solid-state imaging device used in the present invention.

FIG. 18 is a block diagram showing another example of the scanning circuit of the solid-state imaging device used in the present invention.

FIG. 19 is a block diagram showing still another example of the scanning circuit of the solid-state imaging device used in the present invention.

FIG. 20 is a block diagram showing still another example of the scanning circuit of the solid-state imaging device used in the present invention.

FIG. 21 is a block diagram of a control system of the image information processing apparatus of the invention.

FIG. 22 is a diagram showing a spectral characteristic of an infrared light absorbing dye used for a document that can be read by the image information processing apparatus of the present invention.

FIG. 23 is a schematic diagram showing a document that can be read by the image information processing apparatus of the present invention.

FIG. 24 is a block diagram showing the configuration of a discrimination means in the image information processing apparatus of the present invention.

FIG. 25 is a schematic diagram for explaining a discrimination operation in the image information processing apparatus of the present invention.

FIG. 26 is a block diagram showing a detailed configuration of the discriminating means shown in FIG. 24.

Front Page Continuation (72) Inventor Mamoru Miyawaki 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.

Claims (8)

[Claims] 1. A solid-state imaging device for photoelectrically converting an optical signal into an electric signal, and a plurality of first photoelectric conversion elements for converting an optical signal in a visible light region into a first electric signal including a plurality of color separation signals. A second photoelectric conversion element for converting an optical signal in the invisible light region into a second electric signal are provided on the same substrate, and a first element between the plurality of first photoelectric conversion elements. A solid-state imaging device, wherein the separating means and the second element separating means between the first photoelectric conversion element and the second photoelectric conversion element have different configurations. 2. The plurality of first photoelectric conversion elements include a common semiconductor layer of a first conductivity type and individual semiconductor regions of a second conductive layer, and the first element isolation means includes the individual semiconductors. An element isolation region made of a semiconductor of a first conductivity type and having an impurity concentration higher than that of the semiconductor layer, the second element isolation means being located between the first and second photoelectric conversion elements. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is an element isolation region made of a two-conductivity type semiconductor. 3. A plurality of photoelectric conversion elements for converting an optical signal in the visible light region into a first electric signal generate three color separation signals of red, blue and green. The solid-state imaging device described. 4. The solid-state imaging device according to claim 1, wherein the photoelectric conversion element that converts the optical signal in the invisible light region into a second electric signal absorbs infrared light and generates an infrared signal. . 5. A plurality of photoelectric conversion elements for converting an optical signal in the visible light region into a first electric signal generate three color separation signals of red, blue and green, and light in the invisible light region. The solid-state imaging device according to claim 1, wherein a photoelectric conversion element that converts a signal into a second electric signal absorbs infrared light and generates an infrared signal. 6. The solid-state imaging device according to claim 1, wherein the photoelectric conversion element includes a photo diode or a photo transistor. 7. Illuminating means for illuminating an original to obtain an optical signal, and a plurality of first photoelectric conversion elements for converting an optical signal in a visible light region into a first electric signal including a plurality of color separation signals. , A second photoelectric conversion element for converting an optical signal in the non-visible light region into a second electric signal, and the first element between the plurality of first photoelectric conversion elements. Image information comprising: a separating unit; and an image pickup unit having a second element separating unit between the first photoelectric conversion element and the second photoelectric conversion element, which have different configurations. Processing equipment. 8. Illumination means for illuminating an original to obtain an optical signal, and a plurality of first photoelectric conversion elements for converting an optical signal in a visible light region into a first electric signal including a plurality of color separation signals. , A second photoelectric conversion element for converting an optical signal in the non-visible light region into a second electric signal, and the first element between the plurality of first photoelectric conversion elements. An image pickup unit having a configuration in which a separation unit and a second element separation unit between the first photoelectric conversion element and the second photoelectric conversion element are different from each other, and an image based on the first electric signal is displayed. An image forming unit for forming the image, a discriminating unit for discriminating the second electric signal based on a reference signal, and a control unit for controlling the operation of the image forming unit based on the output of the discriminating unit. An image information processing device characterized by: