JP3420555B2 - Image sensor and image information processing device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image sensor used in an image information processing apparatus such as a facsimile, an image scanner and a copying machine, and more particularly to converting an optical signal in a non-visible light region into an electric signal in addition to visible light. Related to the image sensor.

[0002]

2. Description of the Related Art As a solid-state image pickup device which is a conventional image sensor, a charge coupled device (CCD) type, a MOS type, or U.S. Pat.
An amplification type device is known in which a capacitive load is connected to the emitter of the phototransistor described in the specification of 791469.

Recently, its applications have been diversified, and solid-state image pickup devices having new functions are required.

For example, in addition to high image quality and colorization of a copying machine, it has been required to recognize an invisible image and reproduce and record it. Examples of such an image, that is, an invisible light image include an image formed of ink having a characteristic of absorbing infrared rays.

[0005]

Generally, a sensor for detecting invisible light is an individual device, and some new design concept is required to use the detection of an image or the like together with the sensor for detecting visible light.

As a basic design concept, the present inventors first found out a technique of monolithically incorporating a sensor for detecting visible light and a sensor for detecting invisible light in one semiconductor chip.

However, there is room for further improvement in the above technique.

[0008]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a small-sized device which can favorably detect color-separated optical signals in a wide wavelength range from a visible light region to an invisible light region and can relatively easily perform signal processing. It is to provide an image sensor.

According to the present invention, a plurality of photoelectric conversion elements for color-separating an optical signal in the visible light region and converting it into an electric signal, and a plurality of photoelectric conversion elements for converting an optical signal in the non-visible light region into an electric signal, Are arranged side by side, and a plurality of photoelectric conversion elements for color-separating the optical signals in the visible light region and converting the signals into electric signals are provided in the light receiving portion thereof with red, blue, and green. Two color filters are provided, and a plurality of photoelectric conversion elements for converting an optical signal in the non-visible light region into an electric signal are provided in the light receiving part of the visible color in which a red color filter and a blue color filter are laminated. It is characterized in that a light cut filter is provided.

A plurality of photoelectric conversion elements for color-separating the optical signal in the visible light region and converting the signal into an electric signal are provided in the light receiving portion thereof.
Furthermore, an infrared cut filter is provided.

The infrared cut filter has layers of a low refractive index substance and layers of a high refractive index substance which are alternately laminated.

The infrared cut filter is a layer common to a plurality of photoelectric conversion elements for color-separating the optical signal in the visible light region and converting it into an electric signal.

The color filter is laminated on the infrared cut filter.

The infrared cut filter is laminated on the color filter.

The color filter is a dye filter or a colored resist filter.

A transparent layer having a flat upper surface is provided between the red color filter and the blue color filter, which are the visible light cut filters.

Of the red color filter and the blue color filter which are the visible light cut filters, the pattern of the filter present in the lower layer is larger than the pattern of the filter present in the upper layer.

Further, according to the present invention, a plurality of photoelectric conversion elements for color-separating an optical signal in the visible light region and converting it into an electric signal and a plurality of photoelectric conversion elements for converting an optical signal in the non-visible light region into an electric signal. And, in the image sensor arranged side by side, a plurality of photoelectric conversion elements for color-separating and converting the optical signal in the visible light region into an electric signal, in its light receiving portion, red,
Three color filters, blue and green, are provided,
A plurality of photoelectric conversion elements for converting an optical signal in the non-visible light region into an electric signal are provided with a visible light cut filter, in which a polycrystalline silicon layer and a blue color filter are laminated, in a light receiving portion thereof. Is characterized by.

Further, according to the present invention, the illumination means for illuminating the original in order to obtain an optical signal and the optical signal corresponding to the original produced by illuminating the original with the illumination means are received. An image information processing apparatus comprising: an image sensor. Further, an illuminating means for illuminating the original to obtain an optical signal, the above-mentioned image sensor for receiving an optical signal corresponding to the original produced by illuminating the original with the illuminating means, and the optical signal Image forming means for receiving an output from the image sensor based on the visible light region, forming a recording signal from the output to form an image, and the image sensor based on the infrared light region of the optical signal. A discriminating unit that receives the output and discriminates whether or not the original has an invisible specific pattern, and if the discriminating unit determines that the original has the invisible specific pattern, and controlling the recording signal from the image forming means, the image
An image information processing apparatus comprising: a control unit that prevents faithful image formation by the forming unit .

[0020]

FIG. 1 is a schematic top view for explaining one embodiment of the present invention. The image sensor 1 includes four photoelectric conversion elements (R, G, B) for converting optical signals in the visible light region into electric signals and photoelectric conversion elements (IR) for converting optical signals in the invisible light region into electric signals. They are lined up in a line configuration. Therefore, the optical signal can be detected in a wide range of the invisible light region and the visible light region, and a high-performance image sensor can be obtained.

As the photoelectric conversion element of the present invention, a photovoltaic element such as a photodiode or a phototransistor or a photoconductive element is preferably used.

The photoelectric conversion element for converting an optical signal in the visible light region into an electric signal is transmitted through the visible light region so as to selectively absorb only the optical signal in the visible light region and invisible light. An element having a laminated filter that blocks light in the wavelength region used for photoelectric conversion in another photoelectric conversion element in the area is used.

Further, in order to obtain an optical signal of a specific region in the visible light region, a laminated layer formed of a material having a selective sensitivity to the specific region to selectively transmit the light of the specific region. The element is equipped with a filter.

Then, for example, red (R), green (G),
In order to obtain a color signal such as blue (B), an element (R element) having a selective sensitivity in the R region (for example, a wavelength region of 580 nm to 700 nm) and a G region (for example, 480 nm).
nm element (G element) and B area (for example, 400 nm to 48 nm) with selective sensitivity in the wavelength range of 580 nm to 580 nm.
A plurality of types of laminated filters of elements (B elements) having selective sensitivity in the 0 nm wavelength region) are used.

Of course, also in this case, the material itself has the above R, G,
In order to selectively absorb the light in each region B, the light in each region R, G, B is selectively transmitted to a filter having sensitivity in all regions R, G, B except the invisible light region. The filters are laminated to form a structure.

In this case, it is more preferable to use a common filter among the laminated filters of the R, G, and B elements, excluding light in the invisible light region, since the step difference is reduced.

FIG. 2 is a graph showing typical spectral characteristics of transmitted light of the RGB filters, and the relative sensitivity on the vertical axis corresponds to the transmittance of visible light.

Further, in the present invention, the visible light region, the non-visible light region, and the R, G, B wavelength regions are not clearly distinguished by the value of the wavelength, and the photoelectric conversion used in the present invention. The elements are UV, blue, to get each required signal
It suffices that the green light, the red light, and the infrared light are photoelectrically converted by a necessary amount, and unnecessary light is not substantially photoelectrically converted.

On the other hand, as a photoelectric conversion element for converting an optical signal in the invisible light region into an electric signal, for example, an element having a selective sensitivity to infrared rays is used. In this case, it is desirable to combine a material having sensitivity in a wide wavelength region including the invisible light region with a filter having a selective transmittance for light in the invisible light region.

For example, FIG. 3 is a graph showing typical spectral characteristics of transmitted light of the above filter, and the relative sensitivity on the vertical axis corresponds to the transmittance of invisible light. Here, an example of a filter having selective sensitivity in the infrared region (for example, a wavelength region of 750 nm or more) is given, but the present invention is not limited to this.

The solid-state image pickup device of the present invention can form a color line sensor by arranging R, G, B, and IR elements in four lines as shown in FIG. Preferably, an element including a laminated filter in which one image in resolution as a color signal has a selective sensitivity in the R region (R element) and an element including a laminated filter having a selective sensitivity in the G region (G element) , An element including a laminated filter having selective sensitivity in the B region (B element), and an element having selective sensitivity in the invisible light region (IR element).

More preferably, the filter of each element is composed of a laminated filter composed of a plurality of filters having different spectral characteristics from each other, and the number of layers of visible light / invisible light elements is made equal to each other to make a step difference on the surface. Is desirable to be small.

A three-dimensional image or a two-dimensional image is generated as an optical signal to be detected, and a typical example of the two-dimensional image is a plane image of a document or the like. Therefore, when used in a system for reading an image of a document, it is desirable to provide an illumination means for illuminating the document surface. As such an illumination means, a light emitting diode or a xenon lamp,
There are light sources such as halogen lamps. FIG. 4 shows typical light emission distribution characteristics of the light source. The light source is not limited to the one having the characteristics shown in FIG. 4 as long as it can generate the light in the required wavelength region according to the optical signal to be detected. If at least a light source that emits light having the characteristics shown in FIG. 4 is used, it is possible to obtain infrared light in the R, G, B and invisible light regions.

[0034]

EXAMPLES Hereinafter, each example of the present invention will be described in detail, but the present invention is not limited to these examples, and is within the scope of the present invention as long as the object of the present invention can be achieved. It is possible to replace each constituent element in step 1 and change the material selection.

(Embodiment 1) FIG. 5 is a sectional view schematically showing a solid-state image pickup device as an image sensor according to Embodiment 1.

A filter for realizing the function of the present invention is formed on the photodiodes 101 to 104 as photoelectric conversion elements formed on one Si substrate 100. A CCD 201 for transferring a signal is arranged adjacent to each photodiode.

The photodiodes 101 to 103 are visible light
The photodiode 104 receives an optical signal of a region as an invisible light region.
Each of the optical signals in the infrared region as
To live. Therefore, on the photodiodes 101-103
An infrared cut filter 105 is formed on the.
The infrared cut filter 105 uses, for example, light interference.
Can be manufactured in different ways. That is, SiO₂ Like
Low refractive index material and TiO ₂ A high refractive index material such as
Alternately stacked to achieve the characteristics shown in Fig. 6, for example.
It Such a filter 105 is shaped only on the desired area.
It is processed into a desired pattern to be formed. Infrared cut fill
The photodiodes 101-103 have
R region and G region of the visible light region corresponding to each
R, G, B filters 106 that transmit light in the B and B regions
108 are formed respectively. R, G, B filter 10
6 to 108 are, for example, according to a method using selective absorption of light.
Can be manufactured. That is, dyeing with photosensitivity
After forming a pattern in advance using a volatile resin,
A dyeing filter that dyes with a dye, or a dye
Mix it in oil and use it for photolithography only
"Colored resist filter that forms a colored resin pattern"
-", Etc., for example, each visible area as shown in FIG.
The spectral characteristics of are obtained.

On the other hand, a visible light cut filter 109 is formed on the photodiode 104 to read information in the infrared region. The visible light cut filter 109 can be similarly realized by a method using the above-mentioned light interference or a method using the selective absorption of light.
In the present embodiment, the R filter 110 and the B filter 111 are formed so as to overlap with each other, thereby realizing the spectral characteristics as shown in FIG. 3, for example.

In this embodiment, R, G, B color filters 1 are used.
Nos. 06 to 108 are arranged after the infrared cut filter 105 is formed. This is because the vapor deposition temperature of the infrared cut filter is, for example, 200 ° C. or higher, and this temperature is, for example, heat resistance of the dye-type color filter. This structure is effective when the temperature is higher than about 150 ° C.

Further, the infrared cut filter 105 is set to RG.
The photodiode 10 is not provided for each B individually.
It may be formed by a common continuous layer on 1 to 103.

(Second Embodiment) FIG. 7 is a schematic sectional view showing a solid-state image pickup device as an image sensor according to a second embodiment.

The difference from the first embodiment is the configuration of the photoelectric conversion element for converting an optical signal in the infrared region into an electric signal, and the other configurations are the same as those of the first embodiment.

A polycrystalline silicon layer (p-Si layer) 113 and a B filter 112 are laminated on the photodiode 104. This B filter is the same as the B filter 108 in FIG. 5, and exhibits a spectral characteristic as shown in FIG.

On the other hand, the p-Si layer 113 can have desired characteristics (absorption characteristics) in the wavelength region of 500 nm or less by changing the thickness thereof, so that the visible light cutoff as shown in FIG. The characteristics can be given to the filter 109.

In the case of this embodiment, since the R, G and B color filters are arranged only on the same plane, there is an effect that the color filters can be formed more easily than in the first embodiment.

(Third Embodiment) FIG. 10 is a schematic sectional view showing a solid-state image pickup device as an image sensor according to the third embodiment.

The difference from the first embodiment is the configuration of the photoelectric conversion element for converting an optical signal in the infrared region into an electric signal and the arrangement of the IR cut filter 105 and the RGB filter. Others are the same as those of the first embodiment. Have.

An R filter 114 and a B filter 115 are laminated on the photodiode 104. The R filter 114 and the B filter 115 are the R in FIG.
They are the same as the filters 106 and B filters 108, respectively, and show almost the same spectral characteristics as those shown in FIG.

This embodiment is effective when the infrared cut filter is thick. In such a case, in the first embodiment, since the color filter has to be formed after the large step generated by the formation of the infrared cut filter, it is difficult to form the color filter accurately and stably. In this embodiment, since the color filter is arranged on the photodiode having a small step, not only the formation is easy, but also
Since the formation of the infrared cut filter is the final step, there is an effect that there is no problem even when the thickness of the infrared cut filter is increased to obtain desired spectral characteristics. Furthermore, this embodiment is also effective when the temperature required for forming the R, G, and B color filters is high enough to exceed the heat resistance of the infrared filter.

(Fourth Embodiment) FIG. 11 is a schematic sectional view showing a solid-state image pickup device as an image sensor according to a fourth embodiment.

The points different from the first embodiment are filters 106 and 1
07, 108, 110, and 111 are arranged, and other configurations are the same as those in the first embodiment.

Here, a flattened layer 116 is provided between the infrared cut filter 105 and the B filter 108 so that each filter can be formed on the photodiode as accurately as possible. The filter 108 is formed adjacent to the flat surface of the layer 116, and another flattened layer 117 is provided thereon. The filters 106, 107, 11 are provided on the flat surface of the layer 117.
0 and 111 are provided separately. Then, a similar flattened layer 118 is formed on the filters 106, 107, 110 and 111 to form a flat light incident surface.

As the layers 116, 117 and 118, for example, transparent films having a refractive index of about 1.49 are used.

In the present embodiment, the arrangement order of the R, G and B color filters and the formation order of the color filters are not limited to this. By flattening the step generated by the formation of the infrared cut filter, there is an effect that each color filter can be accurately and stably formed in the subsequent steps.

(Fifth Embodiment) FIG. 22 is a schematic sectional view showing a solid-state image pickup device as an image sensor according to a fifth embodiment.

The difference from the first embodiment is that the lower layer of the two-layer filter formed on each photodiode is larger in pattern shape. In this embodiment, the pattern formed on the second layer is 1
Since it is smaller than the pattern of the first layer, it is possible to reduce the influence of the step of the filter of the first layer when forming the pattern of the second layer, which improves accuracy and stability.

(Scanning Circuit) The solid-state image pickup device as the image sensor described above should be configured as an integrated circuit in which the scanning circuit as the readout circuit is integrally integrated with the pixel array including the photoelectric conversion elements on the same substrate. Is desirable. As such a scanning circuit, a CCD type shift register, a CCD type transfer gate, a shift register using a transistor, and a transfer gate using a transistor are used alone or in appropriate combination. Further, a storage capacitor for storing the photoelectrically converted electric signal may be provided if necessary.

In the configuration of FIG. 12, after transferring the signal of each photodiode of each sensor array shown in FIG. 1 to the corresponding CCD register, the signal is sequentially read out in serial format for each color.

FIG. 13 shows another structure. Among the signals of the photodiodes, the R, G and B signals are three visible CCs.
After transferring the IR signal to the D register and the infrared CCD register facing the CCD register for the B signal, R,
The G and B outputs and the IR output are individually read in parallel.

FIG. 14 shows still another configuration. The signals of the respective photodiode arrays are simultaneously transferred to the respective storage capacitors corresponding to the respective photodiodes, temporarily stored therein, and then sequentially read by the selective scanning circuit. At this time, since the output from the storage capacitor can be independently performed for each photodiode, each signal of R, G, B, and IR can be read in a parallel format.

FIG. 15 shows still another configuration, in which each sensor array has upper and lower two CCD registers and is divided into an odd number signal and an even number signal, and a visible R, G, B signal and an infrared IR signal are respectively generated. It is divided into upper and lower parts and read.

[0062] Figure 16 is an image information processing apparatus having an image sensor of the embodiments described above.

The sensor 1 scans almost the same points on the document with R
(Red), G (green), B (blue), and in addition, it is decomposed into an infrared component having a sensitivity of about 1000 nm and read at a pixel density of 400 dpi.

The sensor output is subjected to so-called shading correction using a white plate and an infrared light reference plate.
A bit image signal is input to the identification unit 1001 and the image processing unit 1003. The image processing unit 1003 performs processing such as variable magnification, masking and OCR performed in a general color copying machine, and generates four color signals of C, M, Y and K which are recording signals.

On the other hand, the discriminating unit 1001 as the discriminating means detects a specific pattern in the original document, which is a feature of the present invention, outputs the result to the recording control unit 1004, and fills it with a specific color if necessary. For example, the faithful image formation is prohibited by processing the recording signal and recording it on the recording paper by the recording unit 1005 or by stopping the recording operation.

Next, an image pattern to be detected by the present invention will be outlined with reference to FIGS. 17 and 18.

FIG. 17 shows almost transparent in the visible region,
The spectral characteristics of a transparent dye that absorbs infrared light in the vicinity of nm are shown, and for example, SIR-159 of Mitsui Toatsu Chemicals, Inc. is typical.

FIG. 18 shows an example of a pattern formed by using the transparent ink composed of the transparent infrared absorbing dye. That is, one side is approximately 120 μm on a triangular pattern recorded with a specific, ie, infrared-reflecting ink a.
The square minute pattern b is printed with the transparent ink. Since the pattern has almost the same color in the visible range as shown in the figure, the pattern of b cannot be recognized by human eyes, but can be detected in the infrared range. For the following description, a pattern of about 120 μm is shown as one column, but if the area of b is read at 400 dpi, the size is about 4 pixels as shown. The method of forming the pattern is not limited to this example.

The identification unit 10 shown in FIG. 16 is further described with reference to FIG.
The details of 01 will be described. 19-1-10-1
-4 is an image data delay unit composed of a FIFO,
Image data of 32 bits (8 bits × 4 components) is delayed by one line.

The input image signal is first flip-flop 1.
1-1 and 11-2 delay and hold two pixels for pixel A data, and memories 10-1 and 10-2 further delay two lines for C pixel data, and FFs 11-3 and 11-4.
The target pixel data X delayed by 2 pixels by
Similarly, the B pixel data delayed by two pixels in 5 and 11-6 are similarly input to the determination unit 12 as the D pixel data. Here, the neighborhood A of the pixel position of interest X,
The positional relationship among the B, C, and D4 pixels is as shown in FIG.

That is, if the pixel X of interest is reading the ink in the portion b of FIG. 18, the above A, B,
Both C and D are reading the image of the a pattern located around it.

(Judgment Algorithm) The R component which constitutes the pixel signal of A is A _R , the G component is A _G , the B component is A _{B, and the} infrared component is A _IR. Similarly, each pixel signal of B, C and D. Each of the R, G, B, and IR components that compose is defined. Then, the average values Y _R , Y _G , Y _B , and Y _IR of the same color components are calculated by the following equation. Y _R = 1/4 (A _R + B _R + C _R + D _R ) Y _G = 1/4 (A _G + B _G + C _G + D _G ) Y _B = 1/4 (A _B + B _B + C _B + D _B ) Y _IR = 1/4 (A _IR + B _IR + C _IR + D _IR )

The determination of the target pattern follows the difference between the average value Y and the target pixel X obtained by the above equations. That is, ΔR = | Y _R −X _R |, ΔG = | Y _G −X _G |, ΔB =
When | Y _B −X _B | and ΔIR = Y _IR −X _IR , it is determined that there is a pattern if ΔR <K ΔG <K (K and L are constants) ΔB <K ΔIR> L.

That is, it can be determined that the pixel of interest has a small tint difference in the visible region as compared with its peripheral pixels and that the infrared characteristic has a difference of a constant L or more.

FIG. 21 shows an example of hardware that implements the above determination algorithm. The adder 121 simply adds the respective color components of 4 pixels and outputs the upper 8 bits thereof to obtain Y _R , Y _G , Y _B and Y _IR , respectively. Subtractor 1
22 obtains the difference from each component of the pixel signal of interest,
The absolute values of the three components of R, G and B are compared with a constant K as a reference signal by comparators 123, 124 and 125. On the other hand, the infrared component is compared with a constant L as a reference signal by a comparator 126. The output of each comparator is AND gate 12
7 is input to the output terminal, and if the output terminal is "1", the pattern is determined.

[0076]

According to the present invention, an image sensor and an image information processing apparatus having good color separation performance can be obtained by a simple manufacturing method.

[Brief description of drawings]

FIG. 1 is a schematic top view of a solid-state imaging device according to an embodiment of the present invention.

FIG. 2 is a diagram showing a spectral characteristic of a color filter used in the present invention.

FIG. 3 is a diagram showing a spectral characteristic of a visible light cut filter used in the present invention.

FIG. 4 is a diagram showing a light emission characteristic of a light source used in the present invention.

FIG. 5 is a schematic cross-sectional view of the solid-state imaging device according to the first embodiment of the present invention.

FIG. 6 is a diagram showing spectral characteristics of an infrared cut filter used in the present invention.

FIG. 7 is a schematic sectional view of a solid-state imaging device according to a second embodiment of the present invention.

FIG. 8 is a diagram showing spectral characteristics of a blue filter used in the present invention.

FIG. 9 is a diagram showing the spectral characteristics of another visible light cut filter used in the present invention.

FIG. 10 is a schematic sectional view of a solid-state imaging device according to a third embodiment of the present invention.

FIG. 11 is a schematic cross-sectional view of a solid-state imaging device according to Example 4 of the present invention.

FIG. 12 is a block diagram showing an example of a scanning circuit of the solid-state imaging device used in the present invention.

FIG. 13 is a block diagram showing another example of the scanning circuit of the solid-state imaging device used in the present invention.

FIG. 14 is a block diagram showing still another example of the scanning circuit of the solid-state imaging device used in the present invention.

FIG. 15 is a block diagram showing another example of the scanning circuit of the solid-state imaging device used in the present invention.

FIG. 16 is a block diagram of a control system of the image information processing apparatus of the invention.

FIG. 17 is a diagram showing a spectral characteristic of an infrared light absorbing dye used for a document that can be read by the image information processing apparatus of the present invention.

FIG. 18 is a schematic diagram showing a document that can be read by the image information processing apparatus of the present invention.

FIG. 19 is a block diagram showing the configuration of a discriminating means in the image information processing apparatus according to the present invention.

FIG. 20 is a schematic diagram for explaining a discrimination operation in the image information processing apparatus of the present invention.

FIG. 21 is a block diagram showing a detailed configuration of a discriminating means shown in FIG.

FIG. 22 is a schematic sectional view of a solid-state imaging device according to Example 5 of the present invention.

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mamoru Miyawaki 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (58) Fields investigated (Int.Cl. ⁷ , DB name) H04N 1/024 -1/207

Claims (14)

(57) [Claims] 1. A plurality of photoelectric conversion elements for color-separating an optical signal in the visible light region and converting it into an electric signal, and a plurality of photoelectric conversion elements for converting an optical signal in the non-visible light region into an electric signal are juxtaposed. A plurality of photoelectric conversion elements for color-separating the optical signal in the visible light region and converting the signal into an electric signal in the light-receiving portion thereof, which are three colors of red, blue and green. A filter is provided, a plurality of photoelectric conversion elements for converting the optical signal of the non-visible light region into an electric signal, the light-receiving portion thereof, a visible light cut in which a red color filter and a blue color filter are laminated. An image sensor having a filter. 2. The plurality of photoelectric conversion elements for color-separating an optical signal in the visible light region and converting the signal into an electric signal are further provided with an infrared cut filter in a light receiving portion thereof. Image sensor. 3. The image sensor according to claim 2, wherein the infrared cut filter has layers of a low refractive index material and layers of a high refractive index material that are alternately stacked. 4. The image sensor according to claim 2, wherein the infrared cut filter is a layer common to a plurality of photoelectric conversion elements that color-separates an optical signal in the visible light region and converts the signal into an electric signal. 5. The image sensor according to claim 2, wherein the color filter is laminated on the infrared cut filter. 6. The image sensor according to claim 2, wherein the infrared cut filter is laminated on the color filter. 7. The image sensor according to claim 1, wherein the color filter is a dyeing filter or a coloring resist filter. 8. Between the red color filter and the blue color filter, which become the visible light cut filter,
A transparent layer having a flattened upper surface is provided.
The image sensor described in. 9. The pattern of a filter existing in a lower layer of the red color filter and the blue color filter which is the visible light cut filter is larger than a pattern of a filter existing in an upper layer. Image sensor. 10. Illuminating means for illuminating an original to obtain an optical signal, and illuminating said original with said illuminating means,
An image information processing apparatus comprising: the image sensor according to claim 1 which receives an optical signal corresponding to the original document . 11. Illuminating means for illuminating an original to obtain an optical signal, and illuminating the original with the illuminating means,
The image sensor according to claim 1, which receives an optical signal corresponding to the original document, receives an output from the image sensor based on a visible light region of the optical signal, and generates a recording signal from the output to generate an image. An image forming unit that forms an image, a determining unit that receives an output from the image sensor based on an infrared light region of the optical signal, and determines whether the document has an invisible specific pattern, and the determining unit When it is determined that the means has the invisible specific pattern, the recording signal from the image forming means is controlled based on the output of the determining means, and the image forming hand is controlled.
An image information processing apparatus comprising: a control unit that prevents a faithful image formation by a step . 12. A plurality of photoelectric conversion elements for color-separating an optical signal in the visible light region and converting it into an electric signal, and a plurality of photoelectric conversion elements for converting an optical signal in the non-visible light region into an electric signal are juxtaposed. A plurality of photoelectric conversion elements for color-separating the optical signal in the visible light region and converting it into an electric signal in the image sensor arranged in a light receiving part, which has three colors of red, blue and green. A filter is provided, a plurality of photoelectric conversion elements for converting the optical signal of the non-visible light region into an electric signal, the light receiving portion thereof, a visible light cut laminated polycrystalline silicon layer and a blue color filter. An image sensor having a filter. 13. Illuminating means for illuminating an original to obtain an optical signal, and illuminating the original with the illuminating means .
An image information processing apparatus comprising: the image sensor according to claim 12 which receives an optical signal corresponding to the document . 14. Illuminating means for illuminating an original to obtain an optical signal, and illuminating the original with the illuminating means.
The image sensor according to claim 12, which receives an optical signal corresponding to the document, receives an output from the image sensor based on a visible light region of the optical signal, and generates a recording signal from the output to generate an image. An image forming unit that forms an image, an image forming unit that receives an output from the image sensor based on an infrared light region of the optical signal, and determines whether the document has a non-visible specific pattern, When it is determined that the means has the invisible specific pattern, the recording signal from the image forming means is controlled based on the output of the determining means, and the image forming hand is controlled.
An image information processing apparatus comprising: a control unit that prevents a faithful image formation by a step .