JPH06204258A - Super hemt - Google Patents

Super hemt

Info

Publication number
JPH06204258A
JPH06204258A JP33775192A JP33775192A JPH06204258A JP H06204258 A JPH06204258 A JP H06204258A JP 33775192 A JP33775192 A JP 33775192A JP 33775192 A JP33775192 A JP 33775192A JP H06204258 A JPH06204258 A JP H06204258A
Authority
JP
Japan
Prior art keywords
hemt
super
semiconductors
coulomb
force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33775192A
Other languages
Japanese (ja)
Inventor
Toshifumi Owada
敏文 大和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP33775192A priority Critical patent/JPH06204258A/en
Publication of JPH06204258A publication Critical patent/JPH06204258A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To increase the velocity of electrons in semiconductors. CONSTITUTION:A dielectric material is held between semiconductors 1 and 2, which are different from each other in concentration.

Description

【発明の詳細な説明】 【０００１】 【産業上の利用分野】半導体 【０００２】 【従来の技術】 【０００３】 【発明が解決しようとする課題】半導体内の電子速度 【０００４】 【課題を解決するための手段】クーロン力 【０００５】 【作用】 【０００６】 【発明の効果】遮断周波数が高く成る。 【０００７】 【実施の方法】図１の半導体ＩＣを造る。Detailed Description of the Invention [0001] [Industrial application] Semiconductor [0002] [Prior art] [0003] Electron velocity in semiconductors [0004] [Means for solving the problem] Coulomb force [0005] [Action] [0006] The cutoff frequency is increased. [0007] Method of Implementation The semiconductor IC of FIG. 1 is manufactured.

【図面の簡単な説明】 【図１】この図は半導体の断面図で、だいたいの構成を
示す。 【符号の説明】 ア、 Ｎ型半導体で、不純物の濃度は約１０１８ＣＭ
−３である。 イ、 ＳｌＯ２の絶縁膜（誘電体）、厚さは約５０ｎ
ｍ。 ウ、 ＳｌＯ２の絶縁膜、厚さは約１ｕｍ。 エ、 Ｎ型半導体で、不純物の濃度は約１０１８ＣＭ
−３である。又、厚さは約０．１ｕｍ。 オ、 オーミックコンタクト部。 カ、 Ｓｉ３Ｎ４の絶縁膜、厚さは約１ｎｍ。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view of a semiconductor, showing a general structure. [Explanation of Codes] A. N-type semiconductor with an impurity concentration of about 10 18 CM
-3 . B) SlO 2 insulating film (dielectric), thickness is about 50n
m. C, SlO 2 insulating film, thickness is about 1um. D) N-type semiconductor with impurity concentration of about 10 18 CM
-3 . The thickness is about 0.1um. Oh, ohmic contact section. F, Insulating film of Si 3 N 4 , thickness is about 1 nm.

Claims (1)

【特許請求の範囲】 【請求項 １ 】クーロン力を使用する事によって、熱
拡散、又は、境界における力の不釣り合いだけの場合よ
り２次元電子ガスがより不安定に成る。クーロン力の使
用。Claims: 1. The use of Coulomb forces renders a two-dimensional electron gas less stable than if only thermal diffusion or force imbalance at the boundary. Use of Coulomb force.
JP33775192A 1992-11-06 1992-11-06 Super hemt Pending JPH06204258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33775192A JPH06204258A (en) 1992-11-06 1992-11-06 Super hemt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33775192A JPH06204258A (en) 1992-11-06 1992-11-06 Super hemt

Publications (1)

Publication Number Publication Date
JPH06204258A true JPH06204258A (en) 1994-07-22

Family

ID=18311621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33775192A Pending JPH06204258A (en) 1992-11-06 1992-11-06 Super hemt

Country Status (1)

Country Link
JP (1) JPH06204258A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8878246B2 (en) 2010-06-14 2014-11-04 Samsung Electronics Co., Ltd. High electron mobility transistors and methods of fabricating the same
US9041063B2 (en) 2010-05-04 2015-05-26 Samsung Electroncs Co., Ltd. High electron mobility transistors and methods of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068654A (en) * 1983-08-25 1985-04-19 Tadahiro Omi Semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068654A (en) * 1983-08-25 1985-04-19 Tadahiro Omi Semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9041063B2 (en) 2010-05-04 2015-05-26 Samsung Electroncs Co., Ltd. High electron mobility transistors and methods of manufacturing the same
US8878246B2 (en) 2010-06-14 2014-11-04 Samsung Electronics Co., Ltd. High electron mobility transistors and methods of fabricating the same
US9859410B2 (en) 2010-06-14 2018-01-02 Samsung Electronics Co., Ltd. High electron mobility transistors and methods of fabricating the same

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