JPH06196404A - Manufacture of semiconductor device, and film growing device - Google Patents

Abstract

PURPOSE:To automatically grow a film with precise thickness while eliminating any setting up errors in the processing time by a method wherein, when the time exceeding a specific interval elapsed, the actual relation formula between the processing time and the growing film thickness is repeatedly computed from the inputted data meeting the initial requirement so as to compute the processing time from the actual relation formula. CONSTITUTION:A computer 1 controlling a film growing device 3 is equipped with a storage device 2 discharging the storage function. The growing film thickness YO during the processing time XO is measured to be inputted in the computer 1 for meeting the initial requirement. At this time, the computer 1 computes the relation formula between the actual growing film thickness and the processing time so as to store the formula in the storage 2. Later, the computer 1 inputs a specific growing film thickness to compute the processing time X. Next, the film growing device 3 setting up the processing time processes the growing film for the set up processing time only. Through these procedures, any manual work for setting up the processing time X can be eliminated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device and a film growth apparatus, and more particularly to a method for growing a film in a semiconductor device and a film growth apparatus used for the method.

[0002]

2. Description of the Related Art The growth of a film in a conventional method for manufacturing a semiconductor device is a human work and is performed according to a flow chart shown in FIG. First, a correspondence table of the processing time with respect to the grown film thickness as shown in FIG. 6, which is empirically obtained from the relationship between the grown film thickness and the processing time as shown in FIG. 5, is prepared.
Then, in step 13, the range of the desired growth film thickness is searched from the above correspondence table, the processing time for it is selected in step 14, and the processing time is set in the film growth apparatus in step 15. Further, the film growth apparatus was working only for the input processing time.

[0003]

A semiconductor device is a multi-layered stack of various films, a function is created by a combination of each film, and the film thickness value is an important factor for controlling the characteristic value. It has become one.

In the conventional film growth apparatus and manufacturing method, the processing time for a desired growth film thickness can be set only in the film thickness width unit of the correspondence table of the processing time for the growth film thickness as shown in FIG. The film growth apparatus can change the growth film thickness with respect to the processing time with respect to both the time and the number of treatments, but the change cannot be added to the processing time, so that it is difficult to accurately obtain the desired growth film thickness. . In addition, a mistake in searching the correspondence table by the human and an error in inputting the processing time have occurred.

The object of the present invention is to eliminate the drawbacks of the film growth method and the film growth apparatus used therefor, which have been performed in the conventional human work, and to obtain a more accurate grown film thickness automatically. It is an object of the present invention to provide a method for manufacturing a semiconductor device and a film growth apparatus that can avoid setting mistakes in processing time.

[0006]

In the method of manufacturing a semiconductor device according to the first aspect of the present invention, the processing time and the grown film thickness as the initial conditions of the film growth apparatus are input, and the processing time and the grown film thickness are input. The step of obtaining the actual relational expression from the relative relationship, the step of obtaining the actual processing time from the actual relational expression, and the newly inputting the processing time as the initial condition and the growth film when the specified interval or more has elapsed. The method further includes a step of obtaining an actual relational expression again from the thickness, a step of obtaining a processing time from the actual relational expression, and a step of obtaining an elapsed time and the number of processes.

Further, the film growth apparatus of the second invention of the present invention has means for storing the manufacturing method, and has a function of automatically setting the processing time obtained by the above-described manufacturing method in the film growth apparatus. It has a function of working without human data setting work depending on its processing time.

[0008]

The present invention will be described below with reference to the drawings. FIG. 1 is a flow chart of a manufacturing method for explaining an embodiment of the present invention.

As shown in FIG. 1, first, in step 1, a desired growth film thickness Y is input. Then, in step 2, it is judged whether or not the relational expression between the grown film thickness and the processing time is stored,
If not, the processing time X of the initial condition in step 3
The grown film thickness Y0 when processed with 0 is input, and in step 4, it is substituted into the process time X and the grown film thickness Y of the relational expression between the grown film thickness and the process time in FIG. 5 to obtain the value of the complement b. In step 5, the complement b is substituted into the complement B0 of the relational expression between the actual grown film thickness and the processing time in FIG. 2, and in step 6, the actual relational expression is stored. Then, in step 7, the elapsed time T and the processing number N are calculated, and the process proceeds to the next step 8.

When the relational expression between the actual grown film thickness and the processing time is stored, it is judged in step 8 whether the elapsed time T and the number of processings N are less than the specified intervals Tmax and Nmax. Re-executes the processing for creating the relational expression between the actual processing film thickness and the processing time in steps 3 to 7.

Next, in step 9, the desired growth film thickness Y is substituted into the actual relational expression, and in step 10, the processing time X is obtained. Then, in step 11, the processing time X is set in the film growth apparatus, and in step 12, the elapsed time T and the processing number N are calculated, and the process is ended.

FIG. 3 is a block diagram of a film growth apparatus for explaining another embodiment of the present invention. In FIG. 3, a computer 1 has a memory device 2 that controls the film growth apparatus 3 and realizes a memory function, and has the manufacturing method of FIG. As an initial condition, the growth film thickness Y0 at the processing time X0 is measured and input to the computer 1. The computer 1 obtains the relational expression between the actual growth film thickness and the processing time according to the flowchart of FIG. To do. After that, the desired growth film thickness is input to the computer 1, and the computer 1 calculates the processing time X and sets it in the film growth apparatus 3, and the film growth apparatus 3
Performs processing for that processing time. No human work is required to set the processing time X.

FIG. 4 is a block diagram of a film growth apparatus for explaining a third embodiment of the present invention. The desired growth film thickness data is often set online on a host computer that controls the production of the entire factory. Also in this embodiment, the film growth apparatus 3 is connected to the host computer 4 online. The film growth apparatus 3 has a storage device 2 that realizes a storage function and a microcomputer 6 having the manufacturing method of FIG. As in the second embodiment, as the initial condition, the grown film thickness Y0 at the processing time X0 is measured and input from the data input / output device 5. The microcomputer 6 obtains a relational expression between the grown film thickness and the processing time according to the flowchart of FIG. 1 and stores it in the storage device 2. Then, the processing time for the grown film thickness sent online from the host computer 4 is calculated by the built-in microcomputer 6, and the film growth apparatus 3 performs the processing for the processing time. As in the second embodiment, no human work is required for setting the processing time X.

[0014]

As described above, according to the present invention, the work is performed by the processing time obtained from the linear relational expression between the grown film thickness and the processing time, which takes into account the aging of the film growth apparatus. The thickness can be obtained. Further, since the processing time is automatically set in the film growth apparatus, there is no mistake in setting the processing time.

[Brief description of drawings]

FIG. 1 is a flow chart of a manufacturing method for explaining an embodiment of the present invention.

FIG. 2 is a relational expression between an actual grown film thickness and a processing time for explaining an example of the present invention.

FIG. 3 is a configuration diagram of a film growth apparatus for explaining a third embodiment of the present invention.

FIG. 4 is a configuration diagram of a film growth apparatus for explaining a third embodiment of the present invention.

FIG. 5 is a relational expression showing a relative relation between a grown film thickness and a processing time.

FIG. 6 is a correspondence table of processing time for grown film thickness.

FIG. 7 is a flowchart of work performed by a conventional human system.

[Explanation of symbols]

 1 Computer 2 Storage Device 3 Film Growth Device 4 Host Computer 5 Data Input / Output Device 6 Host Computer 7 Micro Computer

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[Procedure amendment]

[Submission date] September 2, 1993

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] Brief description of the drawing

[Correction method] Change

[Correction content]

[Brief description of drawings]

FIG. 1 is a flow chart of a manufacturing method for explaining an embodiment of the present invention.

FIG. 2 is a table showing a relationship between an actual grown film thickness and a processing time for explaining an example of the present invention.

FIG. 3 is a configuration diagram of a film growth apparatus for explaining a third embodiment of the present invention.

FIG. 4 is a configuration diagram of a film growth apparatus for explaining a third embodiment of the present invention.

FIG. 5 is a relationship chart showing a relative relationship between a grown film thickness and a processing time.

FIG. 6 is a chart showing the relationship between the grown film thickness and the processing time.

FIG. 7 is a flowchart of work performed by a conventional human system.

[Explanation of reference numerals] 1 computer 2 storage device 3 film growth device 4 host computer 5 data input / output device 6 host computer 7 microcomputer

Claims (2)

[Claims] 1. In the step of growing a film which is a physical component in semiconductor manufacturing, a processing time and a grown film thickness as initial conditions of a film growing apparatus are inputted, and the processing time and the grown film thickness are relative to each other. The step of obtaining the actual relational expression from the relationship, the step of obtaining the desired processing time from the actual relational expression, and again from the processing time newly input as the initial condition and the grown film thickness when the specified interval or more has elapsed, A method of manufacturing a semiconductor device, comprising: a step of obtaining an actual relational expression, a step of obtaining a processing time from the actual relational expression, and a step of obtaining an elapsed time and a processing number. 2. A method for storing each step of the method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is operated without a data setting operation by a human by the processing time obtained by the manufacturing method. Film growth equipment.