JPH06196351A - Manufacture of layered ceramic capacitor - Google Patents
Manufacture of layered ceramic capacitorInfo
- Publication number
- JPH06196351A JPH06196351A JP4344213A JP34421392A JPH06196351A JP H06196351 A JPH06196351 A JP H06196351A JP 4344213 A JP4344213 A JP 4344213A JP 34421392 A JP34421392 A JP 34421392A JP H06196351 A JPH06196351 A JP H06196351A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- layer
- ceramic capacitor
- intermediate layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000007747 plating Methods 0.000 claims abstract description 51
- 239000004020 conductor Substances 0.000 claims abstract description 21
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 52
- 239000010408 film Substances 0.000 description 33
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 27
- 229910000679 solder Inorganic materials 0.000 description 11
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 8
- 229940081974 saccharin Drugs 0.000 description 8
- 235000019204 saccharin Nutrition 0.000 description 8
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- LMYRWZFENFIFIT-UHFFFAOYSA-N toluene-4-sulfonamide Chemical compound CC1=CC=C(S(N)(=O)=O)C=C1 LMYRWZFENFIFIT-UHFFFAOYSA-N 0.000 description 2
- RHZZVWTVJHZKAH-UHFFFAOYSA-K trisodium;naphthalene-1,2,3-trisulfonate Chemical compound [Na+].[Na+].[Na+].C1=CC=C2C(S([O-])(=O)=O)=C(S([O-])(=O)=O)C(S(=O)(=O)[O-])=CC2=C1 RHZZVWTVJHZKAH-UHFFFAOYSA-K 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- PTEWEFISOFMTTD-UHFFFAOYSA-L disodium;naphthalene-1,2-disulfonate Chemical compound [Na+].[Na+].C1=CC=CC2=C(S([O-])(=O)=O)C(S(=O)(=O)[O-])=CC=C21 PTEWEFISOFMTTD-UHFFFAOYSA-L 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
- H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Ceramic Capacitors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、積層セラミックコンデ
ンサの製造方法、特に、端子電極を構成するＮｉメッキ
中間層の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a monolithic ceramic capacitor, and more particularly to a method for manufacturing a Ni-plated intermediate layer which constitutes a terminal electrode.
【０００２】[0002]
【従来の技術】積層セラミックコンデンサは、チタン酸
バリウム系の誘電体材料からなる誘電体シート上に、パ
ラジウム又はパラジウム合金（Ａｇ−Ｐｄなど）からな
る導体ペーストを内部電極層の形状に応じて印刷を行
い、このような誘電体シートを複数枚積層・圧着した
後、隣接対向する内部電極層が異なる端面部に露出する
ように、裁断して、所定雰囲気・温度で焼結して、積層
体を形成する。2. Description of the Related Art In a multilayer ceramic capacitor, a conductor sheet made of palladium or a palladium alloy (Ag-Pd, etc.) is printed on a dielectric sheet made of a barium titanate-based dielectric material according to the shape of internal electrode layers. After laminating and pressure-bonding a plurality of such dielectric sheets, cutting is performed so that adjacent internal electrode layers are exposed at different end faces, and sintering is performed at a predetermined atmosphere and temperature to obtain a laminated body. To form.
【０００３】続いて、積層体の端面に端子電極を形成し
て、積層セラミックコンデンサを製造していた。Subsequently, a terminal electrode was formed on the end surface of the laminated body to manufacture a laminated ceramic capacitor.
【０００４】端子電極の具体的な製造方法としては、焼
結された積層体の端面に、Ａｇ系導体ペーストをディッ
プ法で、塗布し、乾燥・焼きつけして、下地膜を形成し
た後、硫酸ニッケル、塩化ニッケル、硼酸、水を含むＮ
ｉメッキ液中で、メッキ処理して、Ａｇ系導体膜の下地
膜上に、Ｎｉメッキ中間層を被覆していた。さらにその
後、Ｎｉメッキ中間層上に、外部メッキ層、例えば、Ｓ
ｎメッキ液中でメッキ処理してＳｎメッキ層を形成して
いた。As a specific method of manufacturing the terminal electrode, an Ag-based conductor paste is applied to the end surface of the sintered laminate by a dipping method, dried and baked to form a base film, and then sulfuric acid is added. N containing nickel, nickel chloride, boric acid, water
A plating treatment was performed in an i-plating solution to coat a Ni-plating intermediate layer on the base film of the Ag-based conductor film. After that, an external plating layer such as S is formed on the Ni plating intermediate layer.
An Sn plating layer was formed by plating in an n plating solution.
【０００５】[0005]
【発明が解決しようとする課題】しかし、上述のＮｉメ
ッキ中間層の製造工程において、Ｎｉメッキ中間層の厚
みにバラツキが発生してしまうという問題点があった。
Ｎｉメッキ中間層の厚みは、好ましくは、１．３〜２．
７μｍ、特に１．５〜２．５μｍ程度となることが望ま
しいが、実際には、１．０〜３．０μｍとバラツキが大
きくなる。Ｎｉメッキ中間層は、積層セラミックコンデ
ンサをプリント配線基板上に半田接合する際、半田によ
ってＡｇ系導体膜の下地膜が食われないように、また、
その熱に対して耐え得るようにするために形成されるも
のであるが、１．３μｍ以下と薄くなると、Ａｇ系導体
膜の下地膜の半田くわれが顕著になり、また耐熱信頼性
も大きく低下してしまう。However, there is a problem in that the thickness of the Ni-plated intermediate layer varies in the manufacturing process of the Ni-plated intermediate layer described above.
The thickness of the Ni-plated intermediate layer is preferably 1.3 to 2.
It is desirable that the thickness is 7 μm, particularly about 1.5 to 2.5 μm, but in reality, the variation becomes large, 1.0 to 3.0 μm. The Ni-plated intermediate layer prevents the underlying film of the Ag-based conductor film from being eaten by the solder when the multilayer ceramic capacitor is solder-bonded onto the printed wiring board.
It is formed to withstand the heat, but when it is as thin as 1.3 μm or less, the solder layer of the base film of the Ag-based conductor film becomes remarkable, and the heat resistance is also large. Will fall.
【０００６】本発明は、上述の問題点に鑑みて案出され
たものであり、その目的は、Ｎｉメッキ中間層の厚みを
所定厚み以上に、且つのバラツキを少なくして、Ａｇ系
導体膜の下地膜の半田くわれを有効に防止できる積層セ
ラミックコンデンサの製造方法を提供するものである。The present invention has been devised in view of the above-mentioned problems, and an object thereof is to make the thickness of the Ni-plating intermediate layer equal to or more than a predetermined thickness and to reduce the variation thereof, thereby making the Ag-based conductor film. The present invention provides a method for manufacturing a monolithic ceramic capacitor, which can effectively prevent solder scuffing of the underlying film.
【０００７】[0007]
【課題を解決するための手段】本発明は、内部電極層、
誘電体層が交互に積層され、焼結された積層体の端部
に、Ａｇ系導体材料を塗布・焼き付けを行い、さらに、
Ａｇ系導体膜上に、Ｎｉメッキ液でメッキ処理してＮｉ
メッキ中間層を形成し、さらに、Ｎｉメッキ中間層上に
外部メッキ層を形成した積層セラミックコンデンサの製
造方法において、前記Ｎｉメッキ液中に、＝Ｃ−ＳＯ2
−構造を有する有機化合物を添加して、Ｎｉメッキ中間
層を形成した積層セラミックコンデンサの製造方法であ
る。The present invention is directed to an internal electrode layer,
Dielectric layers are alternately laminated, and an Ag-based conductor material is applied / baked to the end of the sintered laminated body, and further,
Ni-plated on the Ag-based conductor film with Ni plating solution
In a method of manufacturing a laminated ceramic capacitor, wherein a plating intermediate layer is formed, and an external plating layer is further formed on the Ni plating intermediate layer, in the Ni plating solution, = C-SO 2
-A method for producing a monolithic ceramic capacitor in which a Ni-plated intermediate layer is formed by adding an organic compound having a structure.
【０００８】[0008]
【作用】本発明によれば、Ｎｉメッキ中間層の形成にあ
たり、Ｎｉメッキ液（硫酸ニッケル、塩化ニッケル、硼
酸、水）に、さらに、＝Ｃ−ＳＯ2 −構造を有するサッ
カリン、１・５ナフタリンジスルホン酸ナトリウム、
１．３．６ナフタレントリスルホン酸ナトリウム、パラ
トルエンスルホンアミドなどの有機化合物の少なくとも
１種類を添加したため、Ｎｉメッキ中間層の厚みが１．
３〜２．７μｍ、特に好ましい範囲である１．５〜２．
５μｍとなり、バラツキが少ないメッキ層を形成するこ
とができる。According to the present invention, in forming the Ni plating intermediate layer, a Ni plating solution (nickel sulfate, nickel chloride, boric acid, water) is further added, and saccharin having a = C-SO 2 -structure and 1.5 naphthalene. Sodium disulfonate,
1.3.6 Since at least one organic compound such as sodium naphthalene trisulfonate and paratoluene sulfonamide was added, the thickness of the Ni plating intermediate layer was 1.
3 to 2.7 μm, which is a particularly preferable range of 1.5 to 2.
Since the thickness is 5 μm, it is possible to form a plating layer with less variation.
【０００９】これにより、プリント配線基板への半田接
合時における耐熱信頼性が向上し、また、端子電極の半
田食われを有効に防止できることになる。As a result, the heat resistance reliability at the time of solder joining to the printed wiring board is improved, and the solder erosion of the terminal electrode can be effectively prevented.
【００１０】[0010]
【実施例】以下、本発明の積層セラミックコンデンサの
製造方法を詳説する。EXAMPLES The method for producing a monolithic ceramic capacitor of the present invention will be described in detail below.
【００１１】積層セラミックコンデンサは、図１に示す
ように、誘電体層１と内部電極層２ａ、２ｂとを交互に
積層した積層体１０の両端に端子電極３ａ、３ｂが形成
されている。In the monolithic ceramic capacitor, as shown in FIG. 1, terminal electrodes 3a and 3b are formed at both ends of a laminate 10 in which dielectric layers 1 and internal electrode layers 2a and 2b are alternately laminated.
【００１２】具体的には、誘電体層１となる誘電体セラ
ミックのグリーンシート上に、内部電極層２ａまたは２
ｂとなる内部電極パターンをパラジウムまたはパラジウ
ム合金の導体ペーストで印刷塗布し、その後、各グリー
ンシートを内部電極層２ａと２ｂとが互いに対向し、且
つ積層体１０の対向する両端から各々露出するように積
層・熱圧着し、積層セラミックコンデンサの形状に応じ
て裁断した後、所定焼成条件で焼結して、焼結された積
層体１０を得ていた。Specifically, the internal electrode layer 2a or 2 is formed on the dielectric ceramic green sheet to be the dielectric layer 1.
The internal electrode pattern to be b is printed and applied with a conductive paste of palladium or a palladium alloy, and then the respective green sheets are arranged so that the internal electrode layers 2a and 2b face each other and are exposed from both ends of the laminated body 10 facing each other. Then, the laminated body 10 was laminated and thermocompression-bonded, cut according to the shape of the laminated ceramic capacitor, and then sintered under predetermined firing conditions to obtain a sintered laminated body 10.
【００１３】次に、積層体１０の両端に露出した内部電
極層２ａ、２ｂに端子電極３ａ、３ｂを形成する。ま
ず、積層体１０の対向する両端面に、Ａｇ系導体ペース
トをディッピング法で塗布し、その後所定条件で焼きつ
けを行い、８０〜１００μｍの膜厚のＡｇ系導体膜から
成る下地膜３１を形成する。続いて、硫酸ニッケル、塩
化ニッケル、硼酸、水からなるＮｉメッキ液に、さら
に、＝Ｃ−ＳＯ2 −構造を有する例えばサッカリンを添
加した液に、電解メッキを行い、２．０μｍ程度のＮｉ
メッキ中間層３２を形成する。続いて、５〜６μｍ程度
のＳｎメッキ層３３を形成する。その後、中和処理、水
洗処理、アルコールによる置換、乾燥を行い、積層セラ
ミックコンデンサが製造される。Next, terminal electrodes 3a and 3b are formed on the internal electrode layers 2a and 2b exposed at both ends of the laminated body 10. First, an Ag-based conductor paste is applied to both end surfaces of the laminated body 10 facing each other by a dipping method, and then baked under predetermined conditions to form a base film 31 made of an Ag-based conductor film having a thickness of 80 to 100 μm. . Subsequently, electrolytic plating is performed on a Ni plating solution composed of nickel sulfate, nickel chloride, boric acid, and water, and further, for example, a solution obtained by adding, for example, saccharin having a = C-SO 2 -structure, to obtain Ni of about 2.0 μm.
The plating intermediate layer 32 is formed. Then, the Sn plating layer 33 of about 5 to 6 μm is formed. After that, neutralization treatment, water washing treatment, substitution with alcohol, and drying are carried out to manufacture a monolithic ceramic capacitor.
【００１４】ここで、端子電極３ａ、３ｂのＡｇ系導体
膜の下地膜３１は、内部電極層２ａ、２ｂとの接続を確
実におこなうために作用し、Ｎｉメッキ中間層３２は、
主にＡｇ系導体膜の下地膜３１の半田食われを防止する
とともに、耐熱性を向上させるものである。例えば、Ａ
ｇ系導体膜の下地膜３１が露出する場合には、２７０
℃、１０秒程度の熱でＡｇ系導体膜の下地膜３１が劣化
してしまうが、Ｎｉメッキ中間層３２を形成することに
より、２７０℃、６０秒程度にまで、耐熱性を向上させ
ることができる。Ｓｎメッキ層３３は、主に半田接合さ
せる際の半田濡れ性を向上させるために作用する。Here, the base film 31 of the Ag-based conductor film of the terminal electrodes 3a and 3b acts to ensure the connection with the internal electrode layers 2a and 2b, and the Ni-plated intermediate layer 32 is
The main purpose is to prevent solder erosion of the base film 31 of the Ag-based conductor film and to improve heat resistance. For example, A
If the underlying film 31 of the g-based conductor film is exposed, 270
Although the base film 31 of the Ag-based conductor film is deteriorated by heat of about 10 ° C. for about 10 seconds, heat resistance can be improved to about 270 ° C. for about 60 seconds by forming the Ni plating intermediate layer 32. it can. The Sn plating layer 33 acts mainly to improve solder wettability when soldering.
【００１５】本発明は、上述したように、Ｎｉメッキ中
間層３２を形成するにあたり、Ｎｉメッキ液に、＝Ｃ−
ＳＯ2 −構造を有する有機化合物を添加したことであ
る。＝Ｃ−ＳＯ2 −構造を有する有機化合物としては、
上述のサッカリンの他に、１．５ナフタリンジスルホン
酸ナトリウム、１．３．６ナフタレントリスルホン酸ナ
トリウム、パラトルエンスルホンアミドなどが挙げら
れ、その１種類、または２種類以上が添加される。ま
た、その添加量は、Ｎｉメッキ液１ｌ（リットル）に対
して、５〜１５ｍｌ（ミリリットル）を添加する。As described above, according to the present invention, when forming the Ni plating intermediate layer 32, the Ni plating solution is: C-
That is, an organic compound having a SO 2 − structure was added. As an organic compound having a ═C—SO 2 — structure,
In addition to the above-mentioned saccharin, 1.5 sodium naphthalene disulfonate, 1.3.6 sodium naphthalene trisulfonate, paratoluene sulfonamide and the like can be mentioned, and one kind or two or more kinds thereof are added. The amount of addition is 5 to 15 ml (milliliter) with respect to 1 l (liter) of Ni plating solution.
【００１６】このように、Ｎｉメッキ液に＝Ｃ−ＳＯ2
−構造を有する有機化合物を添加することにより、Ｎｉ
メッキ中間層３２を、その膜厚を最適な膜厚である２．
０μｍ程度に、且つそのバラツキを少なくすることがで
き、プリント配線基板上に積層セラミックコンデンサを
半田接合した時、Ａｇ導体膜の下地層３１の半田食われ
による不良が大幅に改善できる。As described above, the Ni plating solution is used as = C-SO 2
Ni by adding an organic compound having a structure
1. The plating intermediate layer 32 has an optimal film thickness.
The variation can be reduced to about 0 μm, and when a multilayer ceramic capacitor is soldered on a printed wiring board, a defect due to solder erosion of the underlayer 31 of the Ag conductor film can be significantly reduced.
【００１７】（実験例）本発明者は、３．２ｍｍ×１．
６ｍｍの積層セラミックコンデンサの端子電極３ａ、３
ｂとして、Ａｇ系導体膜の下地層３１を形成した後、Ｎ
ｉメッキ液１リットルに対して、０〜１５ミリリットル
の＝Ｃ−ＳＯ2 −構造を有する有機化合物であるサッカ
リンを添加し、２０Ａ・２０分の条件で、下地層３１上
にＮｉメッキ中間層３２を形成して、そのサッカリンの
添加量の変化によるＮｉメッキ中間層３２の膜厚のバラ
ツキを調べた。その結果を図２に示し、そのバラツキ度
合を図３に示した。(Experimental Example) The inventor of the present invention has 3.2 mm × 1.
6mm monolithic ceramic capacitor terminal electrodes 3a, 3
As b, after forming the underlayer 31 of the Ag-based conductor film, N
i plating solution to one liter of 0-15 ml = C-SO 2 - was added saccharin is an organic compound having a structure, in 20A · 20 minutes condition, Ni-plated intermediate layer over the base layer 31 32 Was formed, and the variation in the film thickness of the Ni-plated intermediate layer 32 due to the change in the amount of saccharin added was investigated. The results are shown in FIG. 2, and the degree of variation is shown in FIG.
【００１８】図２において、サッカリンを添加しない通
常のＮｉメッキ液では、Ｎｉメッキ中間層３２が、膜厚
約１．０〜３．０μｍと大きなバラツキが発生したの対
して、５ｍｌ／ｌ添加した場合には、約１．３〜２．７
μｍであり、さらに１０ｍｌ／ｌ添加した場合には、約
１．５〜２．５μｍであり、それ以上添加しても、略同
一の膜厚であった。In FIG. 2, in the normal Ni plating solution containing no saccharin, the Ni plating intermediate layer 32 showed a large variation of about 1.0 to 3.0 μm in film thickness, while 5 ml / l was added. In some cases, about 1.3 to 2.7.
μm, and when 10 ml / l was further added, it was about 1.5 to 2.5 μm, and even if it was added more, the film thickness was substantially the same.
【００１９】尚、サッカリン以外の＝Ｃ−ＳＯ2 −構造
を有する有機化合物であっても、同様の結果が得られ
た。Similar results were obtained with organic compounds having a ═C—SO 2 — structure other than saccharin.
【００２０】以上のように、Ｎｉメッキ中間層３２を形
成するにあたり、Ｎｉメッキ液に、＝Ｃ−ＳＯ2 −構造
を有する有機化合物を添加することにより、Ｎｉメッキ
中間層３２の膜厚のバラツキが改善される。従って、こ
のバラツキ、特に膜厚の薄い膜で発生していたＡｇ系導
体膜の下地膜３１の半田食われが大幅に抑えることがで
き、歩留りが大幅に向上する。As described above, when the Ni plating intermediate layer 32 is formed, by adding an organic compound having a ═C—SO 2 — structure to the Ni plating solution, the film thickness of the Ni plating intermediate layer 32 varies. Is improved. Therefore, this variation, particularly the solder erosion of the base film 31 of the Ag-based conductor film, which has occurred in the thin film, can be significantly suppressed, and the yield is greatly improved.
【００２１】また、その添加量としては、少なくとも５
ｍｌ／ｌ以上添加することが好ましく、上限としては、
１５ｍｌ／ｌである。５ｍｌ／ｌ以上添加しなくては、
バラツキの減少を行う効果を充分に得ることはできず、
また、１５ｍｌ／ｌ以上添加すると、メッキが脆くなっ
たり、割れが発生するという不具合が生じる。The amount of addition is at least 5
It is preferable to add at least ml / l, and the upper limit is
15 ml / l. If you do not add more than 5 ml / l,
It is not possible to obtain the effect of reducing variations sufficiently,
Further, if it is added in an amount of 15 ml / l or more, problems occur that the plating becomes brittle and cracks occur.
【００２２】尚、上述の実施例において、Ｎｉメッキ中
間層３２上には、Ｓｎメッキ層３３を被着した例を示し
たが、Ｓｎ／Ｐｂメッキでなどの半田濡れ性の良好な材
料であればよく、また、単層または２種類以上のメッキ
層を積層して形成しても構わない。In the above embodiment, the Sn plating layer 33 is deposited on the Ni plating intermediate layer 32. However, a material having good solder wettability such as Sn / Pb plating may be used. Alternatively, it may be formed in a single layer or by laminating two or more kinds of plating layers.
【００２３】[0023]
【発明の効果】本発明によれば、積層セラミックコンデ
ンサの端子電極のＮｉメッキ中間層を形成するにあた
り、Ｎｉメッキ液中に、＝Ｃ−ＳＯ2 −構造を有する有
機化合物を添加したため、Ｎｉメッキ中間層の厚みのバ
ラツキを大きく改善でき、特に膜厚が薄いことによるＡ
ｇ系導体膜の下地膜の半田食われを有効に防止でき、耐
熱性にすぐれた端子電極を形成することができる。According to the present invention, since an organic compound having a ═C—SO 2 — structure is added to the Ni plating solution when forming the Ni plating intermediate layer of the terminal electrode of the laminated ceramic capacitor, the Ni plating is performed. The variation in the thickness of the intermediate layer can be greatly reduced, and especially due to the small thickness A
It is possible to effectively prevent solder erosion of the base film of the g-based conductor film, and to form a terminal electrode having excellent heat resistance.
【図１】典型的な積層セラミックコンデンサの断面図で
ある。FIG. 1 is a cross-sectional view of a typical monolithic ceramic capacitor.
【図２】サッカリンの添加量の変化によるＮｉメッキ中
間層の膜厚のバラツキを示す特性図である。FIG. 2 is a characteristic diagram showing variations in the film thickness of the Ni-plated intermediate layer due to changes in the amount of saccharin added.
【図３】図２におけるバラツキ度合いを示す特性図であ
る。FIG. 3 is a characteristic diagram showing the degree of variation in FIG.
１・・・・誘電体層 ２ａ、２ｂ・・・・内部電極層 ３ａ、３ｂ・・・・端子電極 ３１・・・・下地膜 ３２・・・・Ｎｉメッキ中間層 ３３・・・・Ｓｎメッキ層 1 ... Dielectric layer 2a, 2b ... Internal electrode layer 3a, 3b ... Terminal electrode 31 ... Base film 32 ... Ni plating intermediate layer 33 ... Sn plating layer
Claims (1)
れ、焼結された積層体の端部に、端子電極としてＡｇ系
導体材料を塗布・焼き付けを行い、さらに、Ａｇ系導体
膜上にＮｉメッキ液でメッキ処理してＮｉ中間層を形成
し、さらに、Ｎｉメッキ層上に外部メッキ層を形成した
積層セラミックコンデンサの製造方法において、 前記Ｎｉメッキ液に、＝Ｃ−ＳＯ2 −構造を有する有機
化合物を添加して、Ｎｉメッキ層を形成することを特徴
とする積層セラミックコンデンサの製造方法。1. An Ag-based conductor material is applied and baked as a terminal electrode to an end portion of a laminated body in which internal electrode layers and dielectric layers are alternately laminated, and further, on an Ag-based conductor film. In the method for manufacturing a monolithic ceramic capacitor, wherein a Ni intermediate layer is formed by plating with a Ni plating solution, and an outer plating layer is further formed on the Ni plating layer, wherein the Ni plating solution has a = C-SO 2 -structure. A method for manufacturing a monolithic ceramic capacitor, comprising forming an Ni plating layer by adding an organic compound having
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4344213A JPH06196351A (en) | 1992-12-24 | 1992-12-24 | Manufacture of layered ceramic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4344213A JPH06196351A (en) | 1992-12-24 | 1992-12-24 | Manufacture of layered ceramic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06196351A true JPH06196351A (en) | 1994-07-15 |
Family
ID=18367508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4344213A Pending JPH06196351A (en) | 1992-12-24 | 1992-12-24 | Manufacture of layered ceramic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06196351A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001210545A (en) * | 2000-01-26 | 2001-08-03 | Murata Mfg Co Ltd | Chip electrical component and chip capacitor |
| US6373683B1 (en) * | 1999-10-08 | 2002-04-16 | Murata Manufacturing Co., Ltd. | Electronic parts |
| JP2015046451A (en) * | 2013-08-28 | 2015-03-12 | 株式会社村田製作所 | Electronic component |
| US10354802B1 (en) * | 2018-09-18 | 2019-07-16 | Samsung Electro-Mechanics Co., Ltd. | Ceramic electronic component |
| JP2020072246A (en) * | 2018-10-29 | 2020-05-07 | サムソン エレクトロ−メカニックス カンパニーリミテッド． | Capacitor component |
| US10957488B2 (en) * | 2018-04-20 | 2021-03-23 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic electronic component |
| US11776754B2 (en) | 2019-04-26 | 2023-10-03 | Murata Manufacturing Co., Ltd. | Electronic component and mounting structure |
| US12020868B2 (en) | 2018-04-20 | 2024-06-25 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic electronic component |
-
1992
- 1992-12-24 JP JP4344213A patent/JPH06196351A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6373683B1 (en) * | 1999-10-08 | 2002-04-16 | Murata Manufacturing Co., Ltd. | Electronic parts |
| JP2001210545A (en) * | 2000-01-26 | 2001-08-03 | Murata Mfg Co Ltd | Chip electrical component and chip capacitor |
| JP3630056B2 (en) * | 2000-01-26 | 2005-03-16 | 株式会社村田製作所 | Chip-type electronic components and chip-type capacitors |
| JP2015046451A (en) * | 2013-08-28 | 2015-03-12 | 株式会社村田製作所 | Electronic component |
| US10957488B2 (en) * | 2018-04-20 | 2021-03-23 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic electronic component |
| US11488779B2 (en) | 2018-04-20 | 2022-11-01 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic electronic component |
| US12020868B2 (en) | 2018-04-20 | 2024-06-25 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic electronic component |
| US10354802B1 (en) * | 2018-09-18 | 2019-07-16 | Samsung Electro-Mechanics Co., Ltd. | Ceramic electronic component |
| JP2020072246A (en) * | 2018-10-29 | 2020-05-07 | サムソン エレクトロ−メカニックス カンパニーリミテッド． | Capacitor component |
| US10804034B2 (en) * | 2018-10-29 | 2020-10-13 | Samsung Electro-Mechanics Co., Ltd. | Capacitor component having secondary phase material contained in external electrode thereof |
| US11152155B2 (en) | 2018-10-29 | 2021-10-19 | Samsung Electro-Mechanics Co., Ltd. | Capacitor component having secondary phase material contained in external electrode thereof |
| US11776754B2 (en) | 2019-04-26 | 2023-10-03 | Murata Manufacturing Co., Ltd. | Electronic component and mounting structure |
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