JPH06195760A - Exposing apparatus for original plate - Google Patents

Exposing apparatus for original plate

Info

Publication number
JPH06195760A
JPH06195760A JP4346389A JP34638992A JPH06195760A JP H06195760 A JPH06195760 A JP H06195760A JP 4346389 A JP4346389 A JP 4346389A JP 34638992 A JP34638992 A JP 34638992A JP H06195760 A JPH06195760 A JP H06195760A
Authority
JP
Japan
Prior art keywords
exposure
semiconductor laser
reference voltage
master
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4346389A
Other languages
Japanese (ja)
Inventor
Yuji Ito
雄二 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP4346389A priority Critical patent/JPH06195760A/en
Publication of JPH06195760A publication Critical patent/JPH06195760A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To elongate the life of a semiconductor laser by feeding a higher reference voltage so as to set the output amount of light suitable for focus servo only for an exposure period from a predetermined time before the start of exposure to the completion of exposure. CONSTITUTION:The output amount of light from a semiconductor laser 2 is changed corresponding to a value of a reference voltage VREF. The voltage VREF is controlled by a system controller 14. The laser 2 is turned ON from a predetermined time before the actual start of exposure to the completion of exposure, that is, the laser is powerfully turned ON with a high reference voltage suitable for focus servo. The laser is kept in the non-exposure mode for the time period other than the above, and a bias voltage as a tow reference voltage is impressed to the laser. In this manner, a voltage fed to a semiconductor laser driving circuit 1 is variably controlled to set the output amount of light of the laser 2 through the control of the controller 14. Accordingly, while the time of the exposure mode is shortened, it is not obstructed that the start-up is stabely attained in the reduced time and the life of the laser 2 is elongated.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、光ディスク製造用の原
盤露光装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a master exposure apparatus for manufacturing an optical disk.

【0002】[0002]

【従来の技術】一般に、この種の原盤露光装置では、フ
ォーカス光源としてHe−Neレーザ光源等が用いられ
ているが、近年では、小型化等を図るため、半導体レー
ザを用いるようにしたものも出現している。
2. Description of the Related Art Generally, a He-Ne laser light source or the like is used as a focus light source in this type of master exposure apparatus. However, in recent years, a semiconductor laser is also used for downsizing. Has appeared.

【0003】このような半導体レーザを光源とする光デ
ィスク製造用原盤露光装置の概略構成を図2に示す。ま
ず、半導体レーザ駆動回路1により駆動されて半導体レ
ーザ2から出射されるレーザ光はコリメートレンズ3を
経た後、ミラー4で反射され、さらに偏光ビームスプリ
ッタ5及びλ/4板6を経て対物レンズ7により極く微
小なスポットに絞られガラス原盤8上に集光照射され
る。この時、ガラス原盤8からの反射光は再び対物レン
ズ7、λ/4板6を経た後、今度は偏光ビームスプリッ
タ5で反射されてフォーカスエラー信号検出光学系(検
出回路も含む)9に入射し、フォーカスエラー信号FE
なる電気信号に変換される。このフォーカスエラー信号
FEは補償回路10及びパワーアンプ11を経て対物レ
ンズ7用のフォーカスアクチュエータ12のコイルにフ
ィードバック印加され、ガラス原盤8の回転面振れ及び
半径方向の面高差の変動に追従して、ガラス原盤8と対
物レンズ7との位置関係が、常にある仕様値内に収まる
ようにするためのフォーカス制御がなされる。
FIG. 2 shows a schematic structure of a master exposure apparatus for manufacturing an optical disc using such a semiconductor laser as a light source. First, the laser light driven by the semiconductor laser drive circuit 1 and emitted from the semiconductor laser 2 passes through the collimator lens 3, is then reflected by the mirror 4, and further passes through the polarization beam splitter 5 and the λ / 4 plate 6 and then the objective lens 7. Then, the light is focused into an extremely small spot and is focused and irradiated on the glass master 8. At this time, the reflected light from the glass master 8 passes through the objective lens 7 and the λ / 4 plate 6 again, and then is reflected by the polarization beam splitter 5 to enter the focus error signal detection optical system (including the detection circuit) 9. Focus error signal FE
Is converted into an electric signal. This focus error signal FE is feedback-applied to the coil of the focus actuator 12 for the objective lens 7 via the compensating circuit 10 and the power amplifier 11 and follows the fluctuation of the rotational surface of the glass master 8 and the fluctuation of the surface height difference in the radial direction. Focus control is performed so that the positional relationship between the glass master 8 and the objective lens 7 is always within a certain specification value.

【0004】[0004]

【発明が解決しようとする課題】ここで、半導体レーザ
2は、電源投入直後は安定せず、光量の安定を得るまで
にはかなりの時間を要し、かつ、半導体レーザ2の出力
安定化は上記のようなフォーカス制御を行う上で必要不
可欠な要素である。よって、従来では、半導体レーザ2
の安定性を確保するために、電源投入時より常時点灯さ
せるようにしている。
Here, the semiconductor laser 2 is not stable immediately after the power is turned on, it takes a considerable time to obtain a stable light amount, and the output of the semiconductor laser 2 is stabilized. It is an essential element for performing the focus control as described above. Therefore, conventionally, the semiconductor laser 2
In order to ensure the stability of, the light is always turned on when the power is turned on.

【0005】ところが、半導体レーザ2の寿命を考えた
場合、その点灯時間とレーザ出力光量とに強く依存して
おり、高出力で常時点灯させると、寿命の短いものとな
ってしまう。
However, when considering the life of the semiconductor laser 2, it strongly depends on the lighting time and the laser output light quantity, and if it is constantly lit at a high output, the life becomes short.

【0006】また、製造すべき光ディスクには、WOR
M(追記型光ディスク)、MO(光磁気ディスク)、C
D(コンパクトディスク)等のように、種々の品種に渡
るものが存在する。原盤露光装置ではこのような各品種
に応じてガラス原盤に設定されたレジスト膜厚差による
反射率の違いに対応できるように、ゲイン調整回路を備
えている。この結果、フォーカスサーボ制御系の構成が
複雑になるとともに、AGC回路(オート・ゲイン・コ
ントローラ)を搭載するとなると、大型化し、半導体レ
ーザを用いて小型化を図るメリットが半減してしまうも
のである。
The optical disc to be manufactured is WOR.
M (write-once optical disc), MO (magneto-optical disc), C
There are various types such as D (compact disc). The master exposure apparatus is provided with a gain adjusting circuit so as to cope with the difference in reflectance due to the difference in resist film thickness set on the glass master according to each kind of product. As a result, the structure of the focus servo control system becomes complicated, and when an AGC circuit (auto gain controller) is mounted, the size becomes large and the merit of downsizing using a semiconductor laser is halved. .

【0007】[0007]

【課題を解決するための手段】請求項1記載の発明で
は、半導体レーザ駆動回路により出力光量が可変される
半導体レーザからのレーザ光を対物レンズによりガラス
原盤上に集光させ、このガラス原盤からの反射光をフォ
ーカスサーボ制御系に入力させてフォーカスアクチュエ
ータをフィードバック制御して前記対物レンズを合焦位
置に変位させるようにした原盤露光装置において、露光
開始より一定時間前から露光終了までの露光期間だけフ
ォーカスサーボに適した出力光量に設定するための高め
の基準電圧を前記半導体レーザ駆動回路に与え前記露光
期間以外の期間中はバイアス用の低めの基準電圧を前記
半導体レーザ駆動回路に与える制御手段を設けた。
According to a first aspect of the present invention, laser light from a semiconductor laser whose output light quantity is changed by a semiconductor laser drive circuit is focused on a glass master by an objective lens, and the glass master is used. In the master exposure apparatus in which the reflected light is input to the focus servo control system and the focus actuator is feedback-controlled to displace the objective lens to the in-focus position, an exposure period from a predetermined time before the start of exposure to the end of the exposure Control means for giving a higher reference voltage to the semiconductor laser drive circuit for setting an output light quantity suitable for focus servo only, and for giving a lower reference voltage for bias to the semiconductor laser drive circuit during periods other than the exposure period. Was set up.

【0008】加えて、請求項2記載の発明では、ガラス
原盤からの反射光量に相当する電圧信号を検出する検出
手段を設け、前記ガラス原盤装着後の合焦近傍時点にお
ける前記検出手段の電圧信号に基づきフォーカスサーボ
に適した出力光量に設定するための基準電圧値を決定す
る制御手段とした。
In addition, in the invention described in claim 2, a detecting means for detecting a voltage signal corresponding to the amount of light reflected from the glass master is provided, and the voltage signal of the detecting means at a time point near the focus after the glass master is mounted. Based on the above, the control means determines the reference voltage value for setting the output light amount suitable for the focus servo.

【0009】この際、請求項3記載の発明では、フォー
カスサーボ系のトータルゲインを一定化させるように基
準電圧値を可変決定するようにした。
In this case, according to the third aspect of the invention, the reference voltage value is variably determined so as to make the total gain of the focus servo system constant.

【0010】[0010]

【作用】請求項1記載の発明においては、フォーカスサ
ーボ用としての適正光量の発振による半導体レーザのパ
ワー点灯期間を必要最小限の露光期間中に限定し、それ
以外の期間中はバイアス用の低めの基準電圧にて駆動さ
せるように制御手段によって半導体レーザ駆動回路に与
える基準電圧を可変させるので、常時パワー点灯させる
ものに比して半導体レーザの寿命を伸ばすことができ、
かつ、露光期間中以外はバイアス用の駆動がなされてい
るので露光立上りに短時間で安定するものとなる。
According to the first aspect of the invention, the power-on period of the semiconductor laser by the oscillation of an appropriate light amount for focus servo is limited to the minimum necessary exposure period, and the bias is set to a low level during other periods. Since the reference voltage applied to the semiconductor laser drive circuit is changed by the control means so that the semiconductor laser is driven by the reference voltage, it is possible to extend the life of the semiconductor laser as compared with the case where the power is constantly turned on.
In addition, since the driving for bias is performed except during the exposure period, it becomes stable in a short time at the rise of exposure.

【0011】ここに、請求項2記載の発明においては、
ガラス原盤装着後に合焦近傍時点でのガラス原盤からの
反射光量に相当する電圧信号に基づき基準電圧値を決定
するので、フォーカス制御用として常に良好なるゲイン
が得られるものとなる。
Here, in the invention according to claim 2,
Since the reference voltage value is determined based on the voltage signal corresponding to the amount of light reflected from the glass master after focusing on the glass master after the glass master is mounted, a good gain for focus control can always be obtained.

【0012】特に、請求項3記載の発明においては、基
準電圧値を可変させることで半導体レーザの出力光量を
制御してフォーカスサーボ系のトータルゲインを一定化
させるので、ゲイン調整は初期設定しておけばよいもの
となり、ゲイン調整部を簡単なものとすることができ、
ガラス原盤のレジスト膜厚の変動に対しても、レジスト
膜厚の異なる品種のガラス原盤に対しても、一定なゲイ
ンによるフォーカスサーボを実現し得るものとなる。
In particular, according to the third aspect of the present invention, the output voltage of the semiconductor laser is controlled by varying the reference voltage value to make the total gain of the focus servo system constant, so that the gain adjustment is initially set. It will be good if the gain adjustment section can be made simple,
It is possible to realize focus servo with a constant gain, even for variations in the resist film thickness of the glass master disk and for glass master disks of different types having different resist film thicknesses.

【0013】[0013]

【実施例】本発明の一実施例を図1に基づいて説明す
る。基本構成は図2の場合に準ずるものであり、図2で
示した部分と同一部分は同一符号を用いて示す。まず、
前述したようにガラス原盤8からの反射光はフォーカス
エラー信号検出光学系(フォーカスサーボ制御系)8に
入力されてフォーカスエラー信号FEの生成に供される
が、同時に、フォーカスエラー信号検出光学系8におい
て、これを検出手段として、反射光量による総和光量に
相当するRF信号(電圧信号)の生成に供される。この
RF信号がA/Dコンバータ13を介してデジタル信号
として随時入力されるシステムコントローラ14が設け
られている。このシステムコントローラ14は制御手段
となって半導体レーザ2の出力光量を設定するために半
導体レーザ駆動回路1に与える基準電圧VREF を可変制
御するもので、D/Aコンバータ15を介してこの基準
電圧VREF を半導体レーザ駆動回路1にフィードバック
入力させるように構成されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described with reference to FIG. The basic configuration is similar to that of FIG. 2, and the same parts as those shown in FIG. 2 are denoted by the same reference numerals. First,
As described above, the reflected light from the glass master 8 is input to the focus error signal detection optical system (focus servo control system) 8 and used to generate the focus error signal FE. At the same time, the focus error signal detection optical system 8 In this case, this is used as a detection means to generate an RF signal (voltage signal) corresponding to the total amount of reflected light. A system controller 14 is provided to which the RF signal is input as a digital signal via the A / D converter 13 at any time. The system controller 14 serves as a control means to variably control the reference voltage V REF given to the semiconductor laser drive circuit 1 in order to set the output light quantity of the semiconductor laser 2, and the reference voltage V REF is supplied via the D / A converter 15. V REF is configured to be fed back to the semiconductor laser driving circuit 1.

【0014】半導体レーザ2はこの基準電圧VREF の値
に対応して出力光量が変化するものである。ここに、シ
ステムコントローラ14による基準電圧VREF の制御
は、図1(b)に示すように行われる。即ち、半導体レ
ーザ2の点灯時間(=フォーカスサーボ用としての適正
光量の発振動作時間)は、実際の露光開始より一定時間
前から露光終了までとして、フォーカスサーボに適した
高い基準電圧VREF(H)でパワー点灯を行わせ(露光モー
ド)、それ以外の時間は非露光モードとして低い基準電
圧VREF(L)なるバイアス電圧を印加させておくものとす
る。ここに、露光モードを露光開始より一定時間前とす
るのは、実際に半導体レーザ2が安定点灯するまでの時
間を見込んだことによる。
The semiconductor laser 2 changes its output light quantity according to the value of the reference voltage V REF . Here, the control of the reference voltage V REF by the system controller 14 is performed as shown in FIG. That is, the lighting time of the semiconductor laser 2 (= oscillation operation time of an appropriate light amount for focus servo) is from a predetermined time before the actual start of exposure to the end of exposure, which is a high reference voltage V REF (H ), The power is turned on (exposure mode), and the bias voltage of the low reference voltage V REF (L) is applied in the non-exposure mode during the other time. The reason why the exposure mode is set to a predetermined time before the start of the exposure is because the time until the semiconductor laser 2 is actually turned on stably is expected.

【0015】このようにシステムコントローラ14の制
御で半導体レーザ2の出力光量を設定するために半導体
レーザ駆動回路1に与える基準電圧VREF の値を可変制
御することで、パワー点灯する露光モード時間を極力短
くしつつ、非露光モード時には露光モード時の立上りの
安定化を素速くするために必要な最小限のバイアス電圧
を基準電圧VREF(L)に基づき印加しておくので、立上り
安定の短時間化を損なうことなく、半導体レーザ2の寿
命を伸ばすことができる。
In this way, the value of the reference voltage V REF given to the semiconductor laser drive circuit 1 in order to set the output light quantity of the semiconductor laser 2 under the control of the system controller 14 is variably controlled, so that the exposure mode time in which the power is turned on is changed. Since the minimum bias voltage necessary for speeding up the stabilization of the rise in the exposure mode in the non-exposure mode is applied based on the reference voltage V REF (L) in the non-exposure mode as much as possible, the rise stability is short. The life of the semiconductor laser 2 can be extended without impairing the time.

【0016】次に、基準電圧VREF の決定方式について
説明する。まず、前提として、フォーカス制御回路では
予めガラス原盤8の基準となるレジスト膜厚に対してフ
ォーカス制御ループのトータルゲインがある規定値(設
計値)に収まるようにゲイン調整部で調整済みであり、
それに対応した基準RF信号(=合焦位置での反射総光
量)も測定し決定されている。
Next, the method of determining the reference voltage V REF will be described. First, as a premise, in the focus control circuit, the gain adjustment unit has previously adjusted the total gain of the focus control loop with respect to the resist film thickness serving as the reference of the glass master 8 so as to be within a certain specified value (design value),
The corresponding reference RF signal (= total reflected light amount at the in-focus position) is also measured and determined.

【0017】しかして、実際にガラス原盤8が装着され
ると、図示しない上下機構により対物レンズ7が下降
し、合焦近傍に位置した時、システムコントローラ14
はその時点でのRF信号を取込み、基準となるレジスト
膜厚時の基準RF信号と比較する。このRF信号が基準
RF信号に対して差がある場合、システムコントローラ
14はD/Aコンバータ15を介して変更した基準電圧
REF を半導体レーザ駆動回路1に与え半導体レーザ2
による出力光量を変える。これにより、レジスト膜厚が
変化してもRF信号は一定となるように制御され、フォ
ーカス制御系のゲインが一定化される。
However, when the glass master 8 is actually mounted, the system controller 14 moves when the objective lens 7 is lowered by the vertical mechanism (not shown) and is positioned near the in-focus state.
Takes the RF signal at that time and compares it with the reference RF signal when the resist film thickness becomes the reference. When this RF signal is different from the reference RF signal, the system controller 14 gives the changed reference voltage V REF to the semiconductor laser drive circuit 1 via the D / A converter 15 and the semiconductor laser 2
Change the output light intensity. As a result, the RF signal is controlled to be constant even if the resist film thickness changes, and the gain of the focus control system is made constant.

【0018】このような基準電圧VREF の決定方式によ
れば、ガラス原盤8においてそのレジスト膜厚が変動
(露光品種による差)する場合のみならず、レジスト膜
厚の異なる種々の品種のガラス原盤8に対して反射光量
(RF信号)の違いによるフォーカス制御系のゲイン
も、各々基準レジスト膜厚時の基準RF信号との比較に
基づく基準電圧VREF の可変により半導体レーザ2の光
量を変えることで、一定にすることができる。よって、
フォーカス制御回路内のゲイン調整部は、初期設定する
だけで後には調整する必要がない。つまり、AGC回路
等を増設する必要なく、トータルゲインを調整し得るも
のとなる。
According to such a method of determining the reference voltage V REF , not only when the resist film thickness of the glass master 8 varies (difference depending on the exposure product type), but also various kinds of glass master plates having different resist film thicknesses are used. 8, the gain of the focus control system due to the difference in the reflected light amount (RF signal) is also changed by changing the reference voltage V REF based on the comparison with the reference RF signal at the time of the reference resist film thickness. Can be kept constant. Therefore,
The gain adjustment unit in the focus control circuit is only initialized and does not need to be adjusted later. That is, the total gain can be adjusted without adding an AGC circuit or the like.

【0019】このようにして、本実施例によれば、フォ
ーカス制御回路を簡単に構成し得るとともに、露光制御
品質を損なうことなく、種々のレジスト膜厚のガラス原
盤に対応できる多品種露光を高精度に実現し得るものと
なる。
As described above, according to the present embodiment, the focus control circuit can be simply constructed, and high-performance multi-product exposure capable of dealing with glass masters having various resist film thicknesses without impairing the exposure control quality. It can be realized with accuracy.

【0020】[0020]

【発明の効果】請求項1記載の発明によれば、フォーカ
スサーボ用としての適正光量の発振による半導体レーザ
のパワー点灯期間を必要最小限の露光期間中に限定し、
それ以外の期間中はバイアス用の低めの基準電圧に基づ
き駆動させるように、制御手段によって半導体レーザ駆
動回路に与える基準電圧を可変させるようにしたので、
常時パワー点灯させるものに比して半導体レーザの寿命
を伸ばすことができ、かつ、露光期間中以外はバイアス
用の駆動がなされているので露光立上りに短時間で安定
させることもでき、フォーカスサーボ動作に支障をきた
すことがない。
According to the first aspect of the invention, the power-on period of the semiconductor laser by the oscillation of an appropriate light amount for focus servo is limited to the minimum necessary exposure period,
During the other period, the reference voltage applied to the semiconductor laser drive circuit is changed by the control means so that the drive is performed based on the lower reference voltage for bias.
The life of the semiconductor laser can be extended compared to the case of constantly turning on the power, and since the drive for bias is performed except during the exposure period, it can be stabilized in a short time at the start of exposure, and focus servo operation It does not hinder the operation.

【0021】ここに、請求項2記載の発明によれば、ガ
ラス原盤装着後に合焦近傍時点でのガラス原盤からの反
射光量に相当する電圧信号に基づき基準電圧値を決定す
るようにしたので、フォーカス制御用として常に良好な
るゲインを得ることができる。
According to the second aspect of the present invention, the reference voltage value is determined based on the voltage signal corresponding to the amount of light reflected from the glass master at the time of focusing near after the glass master is mounted. A good gain can always be obtained for focus control.

【0022】特に、請求項3記載の発明によれば、基準
電圧値を可変させることで半導体レーザの出力光量を制
御してフォーカスサーボ系のトータルゲインを一定化さ
せるようにしたので、ゲイン調整は初期設定しておけば
よく、ゲイン調整部を簡単なものとすることができ、よ
って、ガラス原盤のレジスト膜厚の変動に対しても、レ
ジスト膜厚の異なる品種のガラス原盤に対しても、一定
なゲインによるフォーカスサーボを実現し得るものとな
る。
In particular, according to the third aspect of the invention, the output voltage of the semiconductor laser is controlled by varying the reference voltage value to make the total gain of the focus servo system constant. It is only necessary to make the initial settings, and the gain adjustment section can be made simple. Therefore, even for variations in the resist film thickness of the glass master, and for glass masters of different types with different resist film thickness, The focus servo can be realized with a constant gain.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示し、(a)は構成図、
(b)は基準電圧印加状態を示すタイミングチャートで
ある。
FIG. 1 shows an embodiment of the present invention, in which (a) is a configuration diagram,
(B) is a timing chart showing a reference voltage application state.

【図2】従来例を示す構成図である。FIG. 2 is a configuration diagram showing a conventional example.

【符号の説明】[Explanation of symbols]

1 半導体レーザ駆動回路 2 半導体レーザ 7 対物レンズ 8 ガラス原盤 9 フォーカスサーボ制御系、兼検出手段 12 フォーカスアクチュエータ 14 制御手段 1 Semiconductor Laser Driving Circuit 2 Semiconductor Laser 7 Objective Lens 8 Glass Master 9 Focus Servo Control System / Detecting Means 12 Focus Actuator 14 Control Means

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体レーザ駆動回路により出力光量が
可変される半導体レーザからのレーザ光を対物レンズに
よりガラス原盤上に集光させ、このガラス原盤からの反
射光をフォーカスサーボ制御系に入力させてフォーカス
アクチュエータをフィードバック制御して前記対物レン
ズを合焦位置に変位させるようにした原盤露光装置にお
いて、露光開始より一定時間前から露光終了までの露光
期間だけフォーカスサーボに適した出力光量に設定する
ための高めの基準電圧を前記半導体レーザ駆動回路に与
え前記露光期間以外の期間中はバイアス用の低めの基準
電圧を前記半導体レーザ駆動回路に与える制御手段を設
けたことを特徴とする原盤露光装置。
1. A laser beam from a semiconductor laser whose output light quantity is varied by a semiconductor laser drive circuit is focused on a glass master by an objective lens, and reflected light from this glass master is input to a focus servo control system. In the master exposure apparatus in which the focus actuator is feedback-controlled to displace the objective lens to the in-focus position, in order to set the output light amount suitable for the focus servo only during the exposure period from a certain time before the exposure start to the exposure end. The master exposure apparatus is provided with a control means for applying a higher reference voltage to the semiconductor laser drive circuit and applying a lower reference voltage for bias to the semiconductor laser drive circuit during a period other than the exposure period.
【請求項2】 ガラス原盤からの反射光量に相当する電
圧信号を検出する検出手段を設け、前記ガラス原盤装着
後の合焦近傍時点における前記検出手段の電圧信号に基
づきフォーカスサーボに適した出力光量に設定するため
の基準電圧値を決定する制御手段としたことを特徴とす
る請求項1記載の原盤露光装置。
2. An output light quantity suitable for focus servo based on a voltage signal of the detection means at a time point near focusing after mounting the glass master disk, provided with detection means for detecting a voltage signal corresponding to an amount of light reflected from the glass master disk. 2. The master exposure apparatus according to claim 1, further comprising a control unit that determines a reference voltage value to be set for the master exposure apparatus.
【請求項3】 フォーカスサーボ系のトータルゲインを
一定化させるように基準電圧値を可変決定するようにし
たことを特徴とする請求項2記載の原盤露光装置。
3. The master exposure apparatus according to claim 2, wherein the reference voltage value is variably determined so as to make the total gain of the focus servo system constant.
JP4346389A 1992-12-25 1992-12-25 Exposing apparatus for original plate Pending JPH06195760A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4346389A JPH06195760A (en) 1992-12-25 1992-12-25 Exposing apparatus for original plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4346389A JPH06195760A (en) 1992-12-25 1992-12-25 Exposing apparatus for original plate

Publications (1)

Publication Number Publication Date
JPH06195760A true JPH06195760A (en) 1994-07-15

Family

ID=18383097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4346389A Pending JPH06195760A (en) 1992-12-25 1992-12-25 Exposing apparatus for original plate

Country Status (1)

Country Link
JP (1) JPH06195760A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990015680A1 (en) * 1989-06-12 1990-12-27 Etude Et Developpement En Metallurgie (Edem) Process for low-pressure casting into a mould in a vacuum, in particular for producing parts having thin portions, and device for implementing same
JP2005258280A (en) * 2004-03-15 2005-09-22 Sony Corp Method for manufacturing disk original, manufacturing apparatus and disk original

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990015680A1 (en) * 1989-06-12 1990-12-27 Etude Et Developpement En Metallurgie (Edem) Process for low-pressure casting into a mould in a vacuum, in particular for producing parts having thin portions, and device for implementing same
JP2005258280A (en) * 2004-03-15 2005-09-22 Sony Corp Method for manufacturing disk original, manufacturing apparatus and disk original

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