JPH06192825A - Production of shape memory alloy thin film - Google Patents
Production of shape memory alloy thin filmInfo
- Publication number
- JPH06192825A JPH06192825A JP34673192A JP34673192A JPH06192825A JP H06192825 A JPH06192825 A JP H06192825A JP 34673192 A JP34673192 A JP 34673192A JP 34673192 A JP34673192 A JP 34673192A JP H06192825 A JPH06192825 A JP H06192825A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- shape memory
- memory alloy
- alloy thin
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 51
- 229910001285 shape-memory alloy Inorganic materials 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 abstract description 26
- 229910045601 alloy Inorganic materials 0.000 abstract description 18
- 239000000956 alloy Substances 0.000 abstract description 18
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 6
- 229910004337 Ti-Ni Inorganic materials 0.000 description 5
- 229910011209 Ti—Ni Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 229910000734 martensite Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001938 differential scanning calorimetry curve Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000001637 plasma atomic emission spectroscopy Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910018509 Al—N Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Micromachines (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、スパッタリング法を
用いた形状記憶合金薄膜の製造方法に係り、特に合金組
成の微量制御が可能な形状記憶合金薄膜の製造方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a shape memory alloy thin film using a sputtering method, and more particularly to a method for manufacturing a shape memory alloy thin film capable of controlling a minute amount of alloy composition.
【０００２】[0002]
【従来の技術】近年、マイクロマシンの巨大プロジェク
トの推進に伴い、各種産業分野においてマイクロマシン
の動力源となる超小型駆動源としてのマイクロアクチュ
エータが開発されている。ところで、形状記憶合金は加
熱されると６〜８％もの歪みが形状回復に寄与し、その
回復力も500MPa以上と大きく、更に通電による加熱制御
が容易であるため、上記マイクロアクチュエータの材料
として注目されている。この際、アクチュエータとして
の応答性を改善するために薄膜化してマイクロ化するこ
とが提案されている。形状記憶合金の薄膜は一般の合金
薄膜と同様スパッタリング法や真空蒸着法によって形成
されるが、後に行なわれるフォトエッチング等の加工の
容易性や制御回路の同時作成の要請を考慮した場合、ス
パッタリングによる成膜が有利であり、Ｔｉ−Ｎｉ形状
記憶合金の場合Ｔｉ−Ｎｉ合金ターゲットを用いたスパ
ッタリングが研究されている。2. Description of the Related Art In recent years, along with the promotion of huge projects for micromachines, microactuators have been developed in various industrial fields as microminiature drive sources that serve as power sources for micromachines. By the way, when shape memory alloy is heated, strain of 6 to 8% contributes to shape recovery, its recovery force is as large as 500 MPa or more, and heating control by energization is easy. ing. At this time, it has been proposed to reduce the thickness of the actuator into a microstructure in order to improve the response as an actuator. The shape memory alloy thin film is formed by a sputtering method or a vacuum deposition method like a general alloy thin film, but in consideration of the ease of processing such as photoetching performed later and the demand for simultaneous formation of a control circuit, the thin film is formed by sputtering. Film formation is advantageous, and in the case of Ti-Ni shape memory alloy, sputtering using a Ti-Ni alloy target has been studied.
【０００３】ところでこのような形状記憶合金として一
般によく知られているＴｉ−Ｎｉ形状記憶合金薄膜を作
成する場合、マルテンサイト変態を起こさせるためにＮ
ｉ濃度が４９〜５１at％の狭い範囲に調整する必要があ
る。中でもＮｉ量が０．１％の変化に対して逆変態終了
温度Ａｆが１０〜２０℃も変化するため、最適な均一組
成を得るために組成を微量コントロールすることが重要
であった。By the way, when a Ti--Ni shape memory alloy thin film, which is generally well known as such a shape memory alloy, is formed, N is added in order to cause martensitic transformation.
It is necessary to adjust the i concentration within a narrow range of 49 to 51 at%. In particular, since the reverse transformation end temperature Af changes by 10 to 20 ° C. with respect to the change of the Ni content of 0.1%, it was important to control the composition in a small amount in order to obtain the optimum uniform composition.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来ス
パッタリング法によりＴｉ−Ｎｉ形状記憶合金薄膜を作
成する場合、Ｔｉ−Ｎｉ合金ターゲットを用いている
が、合金ターゲットそのままの組成で成膜されずＮｉリ
ッチになる傾向があった（日本金属学会春期大会講演19
91年4月、４１５、日本金属学会秋期大会講演1991年、
Ｓ2・２８）。又、薄膜の組成を合わせるために何枚か
の合金ターゲットを用い、最適組成を実現する試みもあ
るが、試行錯誤により実験を行なわなければならない。
更にターゲットは装置や成膜時の条件設定により合金組
成の異なるものに変えなければならないが、一般にこれ
らのターゲットは高価なものであり薄膜製造がコスト高
になるという問題があった。However, when a Ti-Ni shape memory alloy thin film is formed by a conventional sputtering method, a Ti-Ni alloy target is used, but the composition of the alloy target is not formed and the Ni-rich alloy is not formed. Tended to become (the Japan Institute of Metals Spring Conference Lecture 19
April 1991, 415, Autumn Meeting, The Japan Institute of Metals, 1991,
S 2・ 28). There is also an attempt to achieve the optimum composition by using several alloy targets to match the composition of the thin film, but an experiment must be conducted by trial and error.
Further, the target must be changed to one having a different alloy composition depending on the apparatus and the condition setting at the time of film formation, but in general, these targets are expensive and there is a problem that the thin film production becomes expensive.
【０００５】本発明はこのような従来の難点を解消し、
得られる形状記憶合金薄膜の組成の微量制御が容易で、
容易に所望の組成を有する形状記憶合金薄膜を得ること
ができる形状記憶合金薄膜の製造方法を提供することを
目的とする。さらに本発明は、１種のターゲットで各種
合金組成の薄膜を製造でき、高価なターゲットを極力少
なくすることができる形状記憶合金薄膜の製造方法を提
供することを目的とする。The present invention solves the above-mentioned conventional problems,
Easy control of the composition of the shape memory alloy thin film obtained,
An object of the present invention is to provide a method for manufacturing a shape memory alloy thin film, which enables a shape memory alloy thin film having a desired composition to be easily obtained. A further object of the present invention is to provide a method for producing a shape memory alloy thin film, which is capable of producing thin films having various alloy compositions with one kind of target and minimizing the number of expensive targets.
【０００６】[0006]
【課題を解決するための手段】このような目的を達成す
る本発明の形状記憶合金薄膜の製造方法は、金属ターゲ
ットをスパッタリングして形状記憶合金薄膜を製造する
に際し、１種の金属から成るターゲットに他種の金属の
チップを設置したものを用いたものである。A method of manufacturing a shape memory alloy thin film according to the present invention which achieves the above object, comprises a target made of one kind of metal when a shape memory alloy thin film is manufactured by sputtering a metal target. It is the one using the other type of metal chips installed.
【０００７】[0007]
【作用】１種の金属から成るターゲットに置かれる他種
の金属のチップの数及び位置を変えることにより、所望
の組成を有する形状記憶合金薄膜を形成することができ
る。例えば金属チップをターゲット中心から外周にずら
すことにより組成の微調整を行なうことができる。The shape memory alloy thin film having a desired composition can be formed by changing the number and the positions of the chips of the other metal placed on the target composed of the one metal. For example, the composition can be finely adjusted by shifting the metal tip from the center of the target to the outer circumference.
【０００８】[0008]
【実施例】以下、本発明の形状記憶合金薄膜の製造方法
を図面に基づき詳述する。図１は本発明の形状記憶合金
薄膜の製造方法が適用される高周波マグネトロンスパッ
タ装置を示すもので、スパッタされるモザイクターゲッ
ト１と、成膜される基板２と、そのホルダ３とを備え、
モザイクターゲット１には高周波（ＲＦ）電源５から高
周波が印加される。またモザイクターゲット１の下部に
は電子をトラップするための永久磁石４が設置されてい
る。装置内にはアルゴン等のガスが導入されるとともに
排気系により所定の真空度に保たれる。又スパッタリン
グ時モザイクターゲット１は冷却水により冷却される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a shape memory alloy thin film of the present invention will be described in detail below with reference to the drawings. FIG. 1 shows a high-frequency magnetron sputtering apparatus to which the method for manufacturing a shape memory alloy thin film of the present invention is applied, which includes a mosaic target 1 to be sputtered, a substrate 2 to be deposited, and a holder 3 thereof.
A high frequency (RF) power source 5 applies a high frequency to the mosaic target 1. A permanent magnet 4 for trapping electrons is installed below the mosaic target 1. A gas such as argon is introduced into the apparatus, and a predetermined vacuum degree is maintained by an exhaust system. During sputtering, the mosaic target 1 is cooled with cooling water.
【０００９】モザイクターゲット１は図２に示すように
成膜する形状記憶合金の組成によって選択される１種の
金属から成るターゲット１１に他種の金属チップ１２が
複数個配置された形態をなしており、同図（ａ）にはＮ
ｉチップ１２をＴｉターゲット１１の同心円上に並べた
もの、同図（ｂ）にはＮｉターゲット１３にＴｉチップ
１４を十字状に並べたもの、同図（ｃ）にはターゲット
１３表面にチップ１４を均一に並べたものをそれぞれ示
す。配列の仕方は特に限定されないが、Ｎｉチップの場
合、永久磁石４の形状から同心円上に配列した方が並べ
やすく、チップの消耗が均一で制御も容易である。基板
２上に成膜される合金の組成を変化させるためには、チ
ップ１２又は１４の大きさや数を変えるか、配列を変え
る。更に組成の微調整を行なうためには、Ｎｉチップを
スパッタされやすいターゲット中心（永久磁石４近傍）
から外周側へ移動させればよい。As shown in FIG. 2, the mosaic target 1 has a form in which a plurality of metal chips 12 of another kind are arranged on a target 11 made of one kind of metal selected according to the composition of the shape memory alloy to be formed. There is N in the figure (a).
The i chip 12 is arranged on a concentric circle of the Ti target 11, the Ni target 13 is arranged with the Ti chip 14 in a cross shape in the same figure (b), and the chip 14 is formed on the surface of the target 13 in the same figure (c). Are shown in a uniform arrangement. The method of arrangement is not particularly limited, but in the case of Ni chips, it is easier to arrange them on concentric circles due to the shape of the permanent magnets 4, the chips are consumed uniformly, and control is also easy. In order to change the composition of the alloy formed on the substrate 2, the size or number of the chips 12 or 14 is changed, or the arrangement is changed. Further, in order to finely adjust the composition, the Ni chip is easily sputtered at the center of the target (near the permanent magnet 4).
From the outer side to the outer side.
【００１０】形状記憶合金薄膜としてＣｕ−Ａｌ−Ｎ
ｉ、Ｃｕ−Ｚｎ、Ｃｕ−Ｓｎ等銅系形状記憶合金の薄膜
を形成する場合には、ＣｕをターゲットしてＡｌ、Ｎ
ｉ、Ｚｎ、Ｓｎのチップを用いてもよい。尚、本発明の
形状記憶合金薄膜の製造方法は上記した高周波マグネト
ロンスパッタの他、三極又は四極スパッタ等チップが並
べられるモザイクターゲットを用いてスパッタリングす
る装置であればすべて適用できる。 実施例１ Φ７６mm（3インチ）×５mmのＴｉターゲット１１に１
０×１０×１mmのＮｉチップ１２を図２（ａ）のよう
に、又はＮｉターゲット１３にＴｉチップ１４を図２
（ｃ）のように配列したモザイクターゲットを用いると
ともに、７６×２６×１mmのガラス基板を用いて、ＲＦ
電力３００Ｗ、Ａｒ圧４．５×１０-2Torrでスパッタリ
ングを行ない、ガラス基板上にＴｉ−Ｎｉ合金薄膜を成
膜した。この時の基板温度はターゲットからの熱輻射等
で室温から約２００℃まで上昇した。なお、基板はモー
タにより４回転／分の速度で回転させながら成膜した。Cu-Al-N as a shape memory alloy thin film
When a thin film of a copper-based shape memory alloy such as i, Cu-Zn, or Cu-Sn is formed, Cu is targeted and Al or N is used.
You may use the chip of i, Zn, and Sn. The method for producing a shape memory alloy thin film according to the present invention can be applied to any apparatus other than the above-mentioned high frequency magnetron sputtering, as long as it is an apparatus for sputtering using a mosaic target in which chips are arranged such as three-pole or four-pole sputtering. Example 1 For a Ti target 11 of Φ76 mm (3 inches) × 5 mm
The Ni chip 12 of 0 × 10 × 1 mm is as shown in FIG. 2A, or the Ti chip 14 is attached to the Ni target 13 as shown in FIG.
Using a mosaic target arranged as shown in (c) and using a glass substrate of 76 × 26 × 1 mm, RF
Sputtering was performed at an electric power of 300 W and an Ar pressure of 4.5 × 10 −2 Torr to form a Ti—Ni alloy thin film on the glass substrate. At this time, the substrate temperature rose from room temperature to about 200 ° C. due to heat radiation from the target. The substrate was formed while being rotated by a motor at a speed of 4 rotations / minute.
【００１１】その結果、均一（平滑）な薄膜を再現性よ
く得ることができたが、チップを図２（ａ）に示すよう
に配列した場合にはターゲットの透磁率がよくなるた
め、プラズマの立上がりがよく成膜速度を早めることが
できた。組成均一性についてはガラス基板の中心１点と
周辺２点についてプラズマ発光分光により組成分析を行
なったところ、バラツキは図２（ａ）のターゲットで±
０．５％以下（試料数ｎ＝４）であった。また再現性に
ついても表１に示すように、４つの試料についてほぼ同
様の組成の薄膜が得られた。As a result, it was possible to obtain a uniform (smooth) thin film with good reproducibility, but when the chips were arranged as shown in FIG. It was possible to accelerate the film formation rate well. Regarding the compositional uniformity, compositional analysis was performed by plasma emission spectroscopy at one center and two peripheral points of the glass substrate.
It was 0.5% or less (the sample number n = 4). Regarding reproducibility, as shown in Table 1, thin films having almost the same composition were obtained for the four samples.
【００１２】[0012]
【表１】 [Table 1]
【００１３】実施例２ 図２（ａ）のＴｉターゲット及びＮｉチップを用い、Ｎ
ｉチップの数を変えて実施例と同じスパッタリング条件
で成膜し、得られた合金薄膜の組成を分析した。尚、組
成分析はプラズマ発光分光によった。その結果、図３に
示すようにＮｉチップ枚数と膜のＮｉ濃度との間には直
線関係があることが示され、チップ数を変えることによ
り膜Ｎｉ濃度を変化させることができた。また、Ｎｉチ
ップ数を９又は１０枚とし、Ｎｉチップの位置を調整す
ることによりマイクロアクチュエータとして適当な合金
組成Ｔｉ−50％Ｎｉの合金薄膜を得ることができた。 実施例３ 実施例１で得られたＴｉ−51％Ｎｉの合金薄膜を基板か
ら剥離し、記憶処理のために１０００℃で１．５時間加
熱して溶体化処理し、更に４００℃、６時間の時効処理
を行なった。処理後の合金薄膜について形状記憶効果に
必要なマルテンサイト変態の確認をＤＳＣ法により測定
した。この合金薄膜のＤＳＣ曲線を図４に示した。図４
からも明らかなようにＲ相変態とマルテンサイト変態に
伴う２つのピークが観察された。Example 2 Using the Ti target and Ni chip shown in FIG.
Film formation was performed under the same sputtering conditions as in the example while changing the number of i-chips, and the composition of the obtained alloy thin film was analyzed. The composition analysis was based on plasma emission spectroscopy. As a result, as shown in FIG. 3, it was shown that there is a linear relationship between the number of Ni chips and the Ni concentration of the film, and it was possible to change the film Ni concentration by changing the number of chips. Further, by setting the number of Ni chips to 9 or 10 and adjusting the position of the Ni chips, an alloy thin film having an alloy composition of Ti-50% Ni suitable for a microactuator could be obtained. Example 3 The Ti-51% Ni alloy thin film obtained in Example 1 was peeled off from the substrate and heat treated at 1000 ° C. for 1.5 hours for solution treatment, followed by solution treatment, and further 400 ° C. for 6 hours. The aging treatment was performed. Confirmation of martensitic transformation required for the shape memory effect was measured by the DSC method on the treated alloy thin film. The DSC curve of this alloy thin film is shown in FIG. Figure 4
As is apparent from the above, two peaks associated with the R phase transformation and the martensite transformation were observed.
【００１４】本発明の形状記憶合金薄膜の製造方法によ
り製造される形状記憶合金薄膜は、小型で熱容量が小さ
く、応答性が改善されるので、アクチュエータの他、医
療用等にも適用できることは言うまでもない。The shape memory alloy thin film manufactured by the method for manufacturing a shape memory alloy thin film of the present invention is small in size, has a small heat capacity, and has improved responsiveness. Therefore, it is needless to say that it can be applied not only to actuators but also to medical applications. Yes.
【００１５】[0015]
【発明の効果】以上の実施例からも明らかなように、本
発明の形状記憶合金薄膜の製造方法によれば、形状記憶
合金薄膜をスパッタリング法により製造する際にターゲ
ットとして１種の金属から成るターゲットに他の金属の
チップを配置したモザイクターゲットを用いることによ
り、容易に組成の均一な形状記憶合金薄膜を製造するこ
とができ、しかも組成の微量コントロールを容易に行な
うことができる。更に本発明の形状記憶合金薄膜の製造
方法によれば、高価な合金ターゲットを多数必要とせず
１種のターゲットでチップの配列や数を変えるだけで各
種組成の形状記憶合金薄膜を得ることができ、形状記憶
合金薄膜を低コストで製造することができる。As is apparent from the above examples, according to the method of manufacturing a shape memory alloy thin film of the present invention, when the shape memory alloy thin film is manufactured by the sputtering method, it is composed of one kind of metal as a target. By using a mosaic target in which chips of another metal are arranged as a target, a shape memory alloy thin film having a uniform composition can be easily manufactured, and a trace amount of composition can be easily controlled. Further, according to the method for manufacturing a shape memory alloy thin film of the present invention, it is possible to obtain a shape memory alloy thin film of various compositions by changing the arrangement and number of chips with one target without requiring a large number of expensive alloy targets. The shape memory alloy thin film can be manufactured at low cost.
【図１】本発明の形状記憶合金薄膜の製造方法が適用さ
れるスパッタリング装置の一実施例を示す図。FIG. 1 is a diagram showing an embodiment of a sputtering apparatus to which the method for manufacturing a shape memory alloy thin film of the present invention is applied.
【図２】本発明の形状記憶合金薄膜の製造方法に用いら
れるターゲットを示す図で、（ａ）、（ｂ）、（ｃ）は
それぞれ異なるチップ配列を示す図。FIG. 2 is a diagram showing a target used in the method for manufacturing a shape memory alloy thin film of the present invention, in which (a), (b) and (c) show different chip arrangements.
【図３】本発明の形状記憶合金薄膜の製造方法により形
成された薄膜の組成とチップ数との関係を示すグラフ。FIG. 3 is a graph showing the relationship between the composition of a thin film formed by the method for producing a shape memory alloy thin film of the present invention and the number of chips.
【図４】本発明の形状記憶合金薄膜の製造方法により形
成された薄膜のＤＳＣ曲線。FIG. 4 is a DSC curve of a thin film formed by the method for manufacturing a shape memory alloy thin film of the present invention.
１・・・・・・モザイクターゲット ２・・・・・・基板 １１・・・・・・Ｔｉターゲット １２・・・・・・Ｎｉチップ １３・・・・・・Ｎｉターゲット １４・・・・・・Ｔｉチップ 1-Mosaic target 2-Substrate 11-Ti target 12-Ni chip 13-Ni target 14-・ Ti chip
Claims (1)
記憶合金薄膜を製造するに際し、前記ターゲットとして
１種の金属から成るターゲットに他種の金属のチップを
設置したモザイクターゲットを用いたことを特徴とする
形状記憶合金薄膜の製造方法。1. When manufacturing a shape memory alloy thin film by sputtering a metal target, a mosaic target in which a chip made of one kind of metal and a chip made of another kind of metal are installed is used as the target. Method for manufacturing shape memory alloy thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34673192A JPH06192825A (en) | 1992-12-25 | 1992-12-25 | Production of shape memory alloy thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34673192A JPH06192825A (en) | 1992-12-25 | 1992-12-25 | Production of shape memory alloy thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06192825A true JPH06192825A (en) | 1994-07-12 |
Family
ID=18385438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34673192A Withdrawn JPH06192825A (en) | 1992-12-25 | 1992-12-25 | Production of shape memory alloy thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06192825A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009149990A (en) * | 2008-12-24 | 2009-07-09 | Nippon Mining & Metals Co Ltd | High-purity shape-memory alloy target and high-purity shape-memory alloy thin-film |
| CN107338418A (en) * | 2017-08-30 | 2017-11-10 | 深圳先进技术研究院 | Transition metal boride metal composite target, filming equipment and application thereof |
-
1992
- 1992-12-25 JP JP34673192A patent/JPH06192825A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009149990A (en) * | 2008-12-24 | 2009-07-09 | Nippon Mining & Metals Co Ltd | High-purity shape-memory alloy target and high-purity shape-memory alloy thin-film |
| CN107338418A (en) * | 2017-08-30 | 2017-11-10 | 深圳先进技术研究院 | Transition metal boride metal composite target, filming equipment and application thereof |
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