JPH06186579A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPH06186579A
JPH06186579A JP33749092A JP33749092A JPH06186579A JP H06186579 A JPH06186579 A JP H06186579A JP 33749092 A JP33749092 A JP 33749092A JP 33749092 A JP33749092 A JP 33749092A JP H06186579 A JPH06186579 A JP H06186579A
Authority
JP
Japan
Prior art keywords
liquid crystal
insulating film
substrate
driver circuit
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP33749092A
Other languages
Japanese (ja)
Other versions
JP3175362B2 (en
Inventor
Kiyobumi Kitawada
清文 北和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
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Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP33749092A priority Critical patent/JP3175362B2/en
Publication of JPH06186579A publication Critical patent/JPH06186579A/en
Application granted granted Critical
Publication of JP3175362B2 publication Critical patent/JP3175362B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To reduce the deterioration of liquid crystal extending for a long period of time by using transparent organic insulating film in second inter-layer insulating film, leaving the organic insulating film in the lower part of a sealing area, arranging a driver circuit on the outer side than an opposed substrate, and providing organic film on the driver circuit. CONSTITUTION:An opposed substrate 302 is fixed on an element substrate 301 with a sealing material 303 of UV curing resin, etc., and liquid crystal is sealed in it. The driver circuit 304 is arranged on the outer side than the sealing area. Also, a thin film transistor 303 for picture element driving is formed on the substrate 301. The driver circuit 304 consisting of the integrated circuit of transistors is arranged on the outside of the sealing area 303, and an area from the picture element area of the element substrate to the lower part of the sealing area 303 is covered with the transparent organic insulating film 319 of polyimide, etc. Furthermore, a picture element electrode of ITO 314, etc., is formed on the transparent organic insulating film 319, and it is connected to the drain electrode of a picture element transistor via a contact hole 315.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、アクティブマトリック
ス型液晶表示装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device.

【0002】[0002]

【従来の技術】従来の液晶表示装置の一例を図1を用い
て説明する。
2. Description of the Related Art An example of a conventional liquid crystal display device will be described with reference to FIG.

【0003】この図は液晶表示装置の外観図である。This figure is an external view of a liquid crystal display device.

【0004】ガラス、石英等の基板101上に画素エリ
ア105を図1(a)のように配置し、この画素部の周
辺に薄膜トランジスタの集積回路からなるドライバー回
路103、104を配置している。対向基板102は、
画素エリア105とドライバー回路103、104の間
にその縁が位置するように、紫外線硬化樹脂等のシール
材106により基板101に固定されている。また対向
基板の透明電極の電位は導電性接着剤によって基板側の
パッド107を通してコモン電位に固定されている。
A pixel area 105 is arranged on a substrate 101 made of glass, quartz or the like as shown in FIG. 1A, and driver circuits 103 and 104 composed of thin film transistor integrated circuits are arranged around the pixel portion. The counter substrate 102 is
The pixel area 105 and the driver circuits 103 and 104 are fixed to the substrate 101 by a sealing material 106 such as an ultraviolet curable resin so that the edge thereof is located between the driver areas 103 and 104. The potential of the transparent electrode of the counter substrate is fixed to the common potential through the pad 107 on the substrate side by the conductive adhesive.

【0005】これは素子基板101と対向基板102の
間に封入されている液晶に水分等が流入するのをできる
だけ避けるためであり、更にドライバー回路、或いはそ
の周辺には電源と同じ電位持つ配線があるのでそれによ
って液晶に電界をかけないためである。
This is to prevent water and the like from flowing into the liquid crystal sealed between the element substrate 101 and the counter substrate 102 as much as possible, and further, a wiring having the same potential as the power source is provided in the driver circuit or its periphery. This is because an electric field is not applied to the liquid crystal due to this.

【0006】この図1のA−A’の部分での構造断面図
を図1(b)に示した。基板101上に多結晶シリコン
等による薄膜トランジスタ113が形成されている。薄
膜トランジスタ、ソース配線、画素電極114は第2層
間絶縁膜120に覆われてはいるが、画素電極114の
上部は開孔されている。このトランジスタのゲート電極
は最終的に終端部116でコンタクトホールを介して配
線117に接続しており、配線117は対向基板端部よ
り外側に形成されたトランジスタの集積回路からなるド
ライバー回路103と接続している。
FIG. 1 (b) is a sectional view of the structure taken along the line AA 'in FIG. A thin film transistor 113 made of polycrystalline silicon or the like is formed on the substrate 101. The thin film transistor, the source line, and the pixel electrode 114 are covered with the second interlayer insulating film 120, but the upper portion of the pixel electrode 114 is opened. The gate electrode of this transistor is finally connected to the wiring 117 at the terminal end portion 116 through the contact hole, and the wiring 117 is connected to the driver circuit 103 formed of an integrated circuit of the transistor formed outside the end portion of the counter substrate. is doing.

【0007】対向基板102には透明電極111が全面
に形成されており、紫外線硬化樹脂等のシール材106
により基板に固定されている。基板101、対向基板1
02をポリイミド等の配向膜112で覆っている。
A transparent electrode 111 is formed on the entire surface of the counter substrate 102, and a sealing material 106 such as an ultraviolet curable resin is formed.
It is fixed to the substrate by. Substrate 101, counter substrate 1
02 is covered with an alignment film 112 such as polyimide.

【0008】また図1のB−B’の部分での構造断面図
を図1(c)に示した。基板101上の第1層間絶縁膜
119の上層に配線306が形成されており、これらは
更に酸化シリコン等の第2層間絶縁膜120で覆われて
いるが、パッド107、画素電極114上部は開孔して
ある。この上にポリイミド等の配向膜112を塗布して
ある。このパッド107はコモン電位になるように配線
されているので、この部分に導電性接着剤118を塗布
し、対向基板102を圧着すると対向基板の対向電極1
11はこれによりコモン電位となる。
Further, FIG. 1C shows a structural sectional view taken along the line BB 'in FIG. Wirings 306 are formed on the first interlayer insulating film 119 on the substrate 101, and these are further covered with a second interlayer insulating film 120 of silicon oxide or the like, but the pads 107 and the upper portions of the pixel electrodes 114 are opened. It has a hole. An alignment film 112 of polyimide or the like is applied on this. Since the pad 107 is wired so as to have a common potential, when a conductive adhesive 118 is applied to this portion and the counter substrate 102 is pressure-bonded, the counter electrode 1 of the counter substrate 1 is formed.
As a result, 11 becomes the common potential.

【0009】また図2は(a)は上述の液晶表示装置の
斜視図であるが、このようにシールエリアを横切る配線
の数は画素数の2倍から4倍程度と非常に多い。図2の
(b)は、このシールを横切るソース配線の断面図であ
る。第1層間絶縁膜上に形成されるソース配線は800
0Å程度のアルミニウムであり、1μm以下の酸化シリ
コンによって覆われている。
Further, FIG. 2A is a perspective view of the above-mentioned liquid crystal display device, but the number of wirings traversing the seal area is as large as about 2 to 4 times the number of pixels. FIG. 2B is a cross-sectional view of the source wiring that crosses this seal. The source wiring formed on the first interlayer insulating film is 800
It is about 0Å aluminum and is covered with silicon oxide of 1 μm or less.

【0010】[0010]

【発明が解決しようとする課題】しかしながら従来の技
術では、ドライバー回路がシールエリアより外部に配置
されているため、シールエリアを横切る配線の数が画素
数の2倍以上と多く、しかも段差がきつく液晶を劣化さ
せる水分等の流入の可能性があった。
However, in the conventional technique, since the driver circuit is arranged outside the seal area, the number of wirings crossing the seal area is as large as twice the number of pixels or more, and the step is tight. There was a possibility of inflow of water etc. that deteriorates the liquid crystal.

【0011】[0011]

【課題を解決するための手段】本発明では第2層間絶縁
膜に透明有機絶縁膜を用い、更に前記有機絶縁膜をシー
ルエリア下部に残し、ドライバー回路は対向基板より外
側に配置し、少なくともドライバー回路上には前記有機
膜を有することを特徴とする。
According to the present invention, a transparent organic insulating film is used for the second interlayer insulating film, the organic insulating film is left below the seal area, and the driver circuit is arranged outside the counter substrate. The organic film is provided on the circuit.

【0012】[0012]

【実施例】以下実施例に基づいて本発明を詳しく説明す
る。
EXAMPLES The present invention will be described in detail based on the following examples.

【0013】図3の(a)は本発明による液晶表示装置
の一例の正面外観図である。素子基板301上に対向基
板302が紫外線硬化樹脂等のシール材303によって
固定され、液晶が封入されている。ドライバー回路30
4はシールエリアより外側に配置されている。四隅の電
極305は対向基板の対向電極に電位を与えるための導
通をとるためのもので、その電位は導電性接着剤等を用
いて素子基板の外部接続端子306から与えられるある
電位に固定される。
FIG. 3A is a front external view of an example of the liquid crystal display device according to the present invention. A counter substrate 302 is fixed on an element substrate 301 by a sealing material 303 such as an ultraviolet curable resin, and a liquid crystal is sealed therein. Driver circuit 30
4 is arranged outside the seal area. The electrodes 305 at the four corners are for conducting to give a potential to the counter electrode of the counter substrate, and the potential is fixed to a certain potential given from the external connection terminal 306 of the element substrate by using a conductive adhesive or the like. It

【0014】図3の(b)は画素エリアからシールエリ
アにかけての構造断面図である。基板301上に画素駆
動用薄膜トランジスタ313が形成されている。シール
エリアの外側にはトランジスタの集積回路からなるドラ
イバー回路304が配置されており、これら素子基板の
画素エリアよりシールエリア下部までをポリイミド等の
透明有機絶縁膜319によって覆っている。この透明有
機絶縁膜の上にITO314等の画素電極が形成されて
おり、画素トランジスタのドレイン電極とコンタクトホ
ール315を介して接続されている。
FIG. 3B is a structural sectional view from the pixel area to the seal area. A pixel driving thin film transistor 313 is formed over the substrate 301. A driver circuit 304 composed of an integrated circuit of transistors is arranged outside the seal area, and a transparent organic insulating film 319 made of polyimide or the like covers the pixel area and the lower part of the seal area of these element substrates. A pixel electrode such as ITO 314 is formed on the transparent organic insulating film, and is connected to the drain electrode of the pixel transistor through the contact hole 315.

【0015】図3の(c)は画素エリアからシールエリ
アにかけての構造断面図である。
FIG. 3C is a structural sectional view from the pixel area to the seal area.

【0016】対向基板302の電位は、導電性接着剤3
20を通して透明有機絶縁膜上のITO等の電極305
に接続され、更にこの電極はその下部にあるコモン電位
を持つ配線318に接続され、コモン電位に固定されて
いる。
The potential of the counter substrate 302 is equal to that of the conductive adhesive 3
An electrode 305 made of ITO or the like on the transparent organic insulating film through 20
Further, this electrode is connected to a wiring 318 having a common potential located therebelow and fixed to the common potential.

【0017】また図4にこの液晶表示装置において、シ
ールを横切る配線の断面図を示した。前記有機膜は応力
が少なく酸化シリコンより厚く塗布してもクラックが入
る等の問題もないので、ソース配線を充分に埋め込むこ
とができるため酸化シリコンよりも表面が平滑となる。
Further, FIG. 4 shows a cross-sectional view of wiring crossing the seal in this liquid crystal display device. Since the organic film has less stress and does not have a problem such as cracking even if it is applied thicker than silicon oxide, the source wiring can be sufficiently embedded, so that the surface becomes smoother than silicon oxide.

【0018】[0018]

【発明の効果】本発明の液晶表示装置の構造をとること
により、シールエリア下部の凹凸が少なく封入された液
晶への水分等の流入が減り、長期に渡って液晶の劣化が
少なく信頼性の高い液晶表示装置を提供することができ
る。
By adopting the structure of the liquid crystal display device of the present invention, the unevenness of the lower part of the seal area is small, the inflow of water and the like into the enclosed liquid crystal is reduced, and the deterioration of the liquid crystal is reduced over a long period of time and the reliability is improved. A high liquid crystal display device can be provided.

【図面の簡単な説明】[Brief description of drawings]

【図1】従来の技術による液晶表示装置の構造を示す外
観図。
FIG. 1 is an external view showing the structure of a conventional liquid crystal display device.

【図2】従来の技術による液晶表示装置の構造を示す斜
視図。
FIG. 2 is a perspective view showing the structure of a conventional liquid crystal display device.

【図3】本発明による液晶表示装置の構造を示す断面
図。
FIG. 3 is a sectional view showing a structure of a liquid crystal display device according to the present invention.

【符号の説明】[Explanation of symbols]

101、201、301・・・素子基板 102、202、302・・・対向基板 113、207、313・・・画素駆動トランジスタ 116、316、・・・画素駆動トランジスタのゲート
電極、及びゲート配線 106、205、303・・・シールエリア 103、104、203、204、304・・・ドライ
バー回路 117、317・・・配線 105・・・画素エリア 114、314・・・画素電極 111、311・・・対向電極 318・・・コモン電位を持つ配線 107、305・・・コモン電位を持つパッド 110、310・・・ブラックマトリックス 115、315・・・画素電極とのコンタクトホール 118、320・・・導電性接着剤 319・・・透明有機絶縁膜 112、312・・・配向膜 119・・・第1層間絶縁膜 120・・・第2層間絶縁膜 108、206、306・・・外部接続端子
101, 201, 301 ... Element substrate 102, 202, 302 ... Counter substrate 113, 207, 313 ... Pixel driving transistor 116, 316, ... Pixel driving transistor gate electrode and gate wiring 106, 205, 303 ... Seal area 103, 104, 203, 204, 304 ... Driver circuit 117, 317 ... Wiring 105 ... Pixel area 114, 314 ... Pixel electrode 111, 311 ... Opposed Electrodes 318 ... Wirings having common potential 107, 305 ... Pads 110 having common potential 110, 310 ... Black matrix 115, 315 ... Contact holes with pixel electrodes 118, 320 ... Conductive adhesion Agent 319 ... Transparent organic insulating film 112, 312 ... Alignment film 119 ... First layer Insulating film 120 ... second interlayer insulating film 108,206,306 ... external connection terminal

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 G02F 1/136 500 9018−2K G09G 3/36 7319−5G H01L 29/784 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical display location G02F 1/136 500 9018-2K G09G 3/36 7319-5G H01L 29/784

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 液晶表示装置の素子基板において、画素
駆動用薄膜トランジスタが有機膜に覆われており、画素
電極が前記有機膜上に形成されることを特徴とする液晶
表示装置。
1. A liquid crystal display device, comprising: an element substrate of the liquid crystal display device, wherein a pixel driving thin film transistor is covered with an organic film, and a pixel electrode is formed on the organic film.
【請求項2】 シールエリア下部に前記有機膜を有する
ことを特徴とする請求項1に記載の液晶表示装置。
2. The liquid crystal display device according to claim 1, wherein the organic film is provided below the seal area.
【請求項3】 ドライバー回路はシールエリア外周に配
置したことを特徴とする請求項2に記載の液晶表示装
置。
3. The liquid crystal display device according to claim 2, wherein the driver circuit is arranged on the outer periphery of the seal area.
【請求項4】 少なくともドライバー回路上には前記有
機膜を有し、且つ上層には電極を有しないことを特徴と
する請求項3に記載の液晶表示装置。
4. The liquid crystal display device according to claim 3, wherein the organic film is provided at least on the driver circuit and no electrode is provided on the upper layer.
JP33749092A 1992-12-17 1992-12-17 Liquid crystal display Expired - Lifetime JP3175362B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33749092A JP3175362B2 (en) 1992-12-17 1992-12-17 Liquid crystal display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33749092A JP3175362B2 (en) 1992-12-17 1992-12-17 Liquid crystal display

Publications (2)

Publication Number Publication Date
JPH06186579A true JPH06186579A (en) 1994-07-08
JP3175362B2 JP3175362B2 (en) 2001-06-11

Family

ID=18309145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33749092A Expired - Lifetime JP3175362B2 (en) 1992-12-17 1992-12-17 Liquid crystal display

Country Status (1)

Country Link
JP (1) JP3175362B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6236444B1 (en) 1993-09-20 2001-05-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal device with drive circuits on both substrates
KR100315208B1 (en) * 1999-12-17 2001-11-26 구본준, 론 위라하디락사 Liquid Crystal Display Device and Method of Fabricating the Same
KR100315209B1 (en) * 1999-12-17 2001-11-29 구본준, 론 위라하디락사 Liquid Crystal Display Device and Method of Fabricating the Same
US6476901B2 (en) * 1997-10-06 2002-11-05 Sharp Kabushiki Kaisha Liquid crystal display including interlayer insulating layer at peripheral sealing portion
US6567147B1 (en) 1997-03-27 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method of fabricating the same
US7142273B1 (en) * 1996-06-25 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display panel with a laminating structure containing a semiconductor layer located under the seal
US7298447B1 (en) 1996-06-25 2007-11-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display panel
CN100416356C (en) * 2005-01-18 2008-09-03 日本电气株式会社 Liquid crystal display panel and liquid crystal display device
US7443478B2 (en) 1997-03-27 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Contact structure
JP2017068031A (en) * 2015-09-30 2017-04-06 トッパン・フォームズ株式会社 Information display medium

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Cited By (22)

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Publication number Priority date Publication date Assignee Title
US7525629B2 (en) 1993-09-20 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device comprising drive circuits that include thin film transistors formed on both substrates
US6236444B1 (en) 1993-09-20 2001-05-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal device with drive circuits on both substrates
US6980275B1 (en) 1993-09-20 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7667817B2 (en) 1996-06-25 2010-02-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display panel
US8334964B2 (en) 1996-06-25 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display panel
US7990514B2 (en) 1996-06-25 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display panel
US7142273B1 (en) * 1996-06-25 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display panel with a laminating structure containing a semiconductor layer located under the seal
US7298447B1 (en) 1996-06-25 2007-11-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display panel
US7760316B2 (en) 1997-03-27 2010-07-20 Semiconductor Energy Laboratory Co., Ltd. Contact structure
US6567147B1 (en) 1997-03-27 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method of fabricating the same
US9217901B2 (en) 1997-03-27 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Contact structure
US8908138B2 (en) 1997-03-27 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Contact structure
US7443478B2 (en) 1997-03-27 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Contact structure
US7616273B2 (en) 1997-03-27 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Contact structure
US7561242B2 (en) 1997-03-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Contact structure
US7697102B2 (en) 1997-03-27 2010-04-13 Semiconductor Energy Laboratory Co., Ltd Contact structure
US6476901B2 (en) * 1997-10-06 2002-11-05 Sharp Kabushiki Kaisha Liquid crystal display including interlayer insulating layer at peripheral sealing portion
KR100315208B1 (en) * 1999-12-17 2001-11-26 구본준, 론 위라하디락사 Liquid Crystal Display Device and Method of Fabricating the Same
KR100315209B1 (en) * 1999-12-17 2001-11-29 구본준, 론 위라하디락사 Liquid Crystal Display Device and Method of Fabricating the Same
CN100416356C (en) * 2005-01-18 2008-09-03 日本电气株式会社 Liquid crystal display panel and liquid crystal display device
US7525618B2 (en) 2005-01-18 2009-04-28 Nec Corporation Liquid crystal display panel and liquid crystal display device
JP2017068031A (en) * 2015-09-30 2017-04-06 トッパン・フォームズ株式会社 Information display medium

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