JPH06186549A - Heating method and heating furnace for substrate - Google Patents

Heating method and heating furnace for substrate

Info

Publication number
JPH06186549A
JPH06186549A JP33621692A JP33621692A JPH06186549A JP H06186549 A JPH06186549 A JP H06186549A JP 33621692 A JP33621692 A JP 33621692A JP 33621692 A JP33621692 A JP 33621692A JP H06186549 A JPH06186549 A JP H06186549A
Authority
JP
Japan
Prior art keywords
glass substrate
substrate
heating
gas
gas supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33621692A
Other languages
Japanese (ja)
Inventor
Hideyuki Ishii
秀幸 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP33621692A priority Critical patent/JPH06186549A/en
Publication of JPH06186549A publication Critical patent/JPH06186549A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)

Abstract

PURPOSE:To provide the heating furnace capable of preventing the adhesion of microdust on the surface of a glass substrate. CONSTITUTION:Previously heated gas is supplied atop the glass substrate G consisting of gas supply holes 25 to maintain the gaseous pressure between a punching plate 26 and the glass substrate G at the gaseous pressure higher than in a space where a glass substrate transporting mechanism 15 exists. The gas flows from the gas supply cylindrical part 23 of a hood 21 via the gas supply holes 25 atop the glass substrate G and flows from the spacing between the glass substrate G and the lower edge 22 to the space where the glass substrate transporting mechanism 15 exists. The microdust does not flow to the glass substrate G side and is discharged from a discharge port 14 even if the microdust splashes from a beam holding mechanism 18 or the ambient. The microdust generated from the glass substrate transporting mechanism 15 is pushed back by the flowing out gaseous flow even if the dust soars up and, therefore, the infiltration of the dust to the upper part of the glass substrate G is not possible. The adhesion of the microdust to the surface of the glass substrate G does not arise.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、たとえば液晶表示装置
の製造工程でガラス基板への配向膜の溶媒を蒸発させ、
乾燥させる基板の加熱方法および加熱炉に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention, for example, evaporates a solvent of an alignment film on a glass substrate in a manufacturing process of a liquid crystal display device,
The present invention relates to a method for heating a substrate to be dried and a heating furnace.

【0002】[0002]

【従来の技術】液晶表示装置の製造工程には、一般に、
ガラス基板表面に液体上の配向膜を印刷し、加熱により
溶媒を蒸発させ、成膜する乾燥工程がある。
2. Description of the Related Art Generally, the manufacturing process of a liquid crystal display device is
There is a drying step in which an alignment film on a liquid is printed on the surface of a glass substrate, a solvent is evaporated by heating, and a film is formed.

【0003】そして、この乾燥工程では、成膜の乾燥状
態のむらを避けるためにガラス基板をより均一に加熱す
るとともに、生産ライン上で連続で処理する必要がある
ので、炉体内に数枚並べられた加熱プレート上をガラス
基板が連続して移動し、ガラス基板を徐々に加熱する枚
葉式となっている。また、ガラス基板の表面へのダスト
の付着および乾燥状態のむらをより防ぐために、常にク
リーンな気体によるパージおよび排気を行ない、炉体内
の雰囲気温度を常に安定でかつ無塵状態にしておかなけ
ればならない。
In this drying step, since it is necessary to heat the glass substrate more uniformly in order to avoid unevenness of the dried state of the film and to continuously process the glass substrate on the production line, several sheets are arranged in the furnace body. Further, the glass substrate is continuously moved on the heating plate to gradually heat the glass substrate, which is a single-wafer type. Also, in order to prevent dust from adhering to the surface of the glass substrate and uneven dryness, it is necessary to constantly perform purging and exhausting with a clean gas to keep the atmosphere temperature in the furnace stable and dust-free. .

【0004】すなわち、ガラス基板の表面は数ミクロン
間隔で設けられた透明電極、また、配向膜の膜厚はオン
グストローム単位と、非常に微細な構成となっている。
That is, the surface of the glass substrate is a transparent electrode provided at intervals of several microns, and the thickness of the alignment film is an angstrom unit, which is a very fine structure.

【0005】このため、表面に数ミクロンぐらいの微小
なダストが1つでも付着してしまうと、表示の際に斑点
として現れたり、電極間の短絡などの不良等を発生させ
てしまう。また、この工程で万一ダストが付着してしま
うと、液体上の膜に付着し、一度加熱されたダストは、
膜と一緒にガラス基板に固着してしまい、後で回収し再
利用しようとしてもできない。
Therefore, if even a small amount of dust of about several microns adheres to the surface, it will appear as spots during display, and defects such as short circuits between electrodes will occur. If dust adheres in this process, it will adhere to the film on the liquid and once heated,
It adheres to the glass substrate together with the film and cannot be recovered and reused later.

【0006】したがって、ここでは微小なダストが1つ
でもガラス基板の表面に付着することなく成膜できるこ
とを要求される。
Therefore, here, it is required that even a small amount of fine dust can be deposited without adhering to the surface of the glass substrate.

【0007】また、ここで従来例の加熱炉の構造を図2
および図3に示す。
The structure of the conventional heating furnace is shown in FIG.
And shown in FIG.

【0008】図2および図3において、11は炉体で、こ
の炉体11は内部を無塵状態にし、長手方向の一端および
他端に入口12および出口13を有しており、下部には排気
ポート14が形成されている。また、これら入口12および
出口13間には加熱対象のガラス基板Gを搬送するガラス
基板搬送機構15が配設され、このガラス基板搬送機構15
間にガラス基板Gを加熱する加熱プレート16が、ガラス
基板Gの搬送方向に沿って複数枚、配設されている。
In FIGS. 2 and 3, reference numeral 11 denotes a furnace body, which has a dust-free interior, has an inlet 12 and an outlet 13 at one end and the other end in the longitudinal direction, and has a lower part at the bottom. The exhaust port 14 is formed. Further, a glass substrate transfer mechanism 15 for transferring the glass substrate G to be heated is disposed between the inlet 12 and the outlet 13, and the glass substrate transfer mechanism 15 is provided.
A plurality of heating plates 16 for heating the glass substrate G are arranged between them along the conveyance direction of the glass substrate G.

【0009】そして、ガラス基板搬送機構15は、搬送ビ
ーム17を有し、この搬送ビーム17は加熱プレート16に対
応してこの加熱プレート16の両側に配置され、互いに同
期運転をし、上下動、前進後退することにより、ガラス
基板Gを順次、次の加熱プレート16へ搬送する。なお、
搬送ビーム17は炉体11内の入口12から出口13に向かって
長く延びているため、この搬送ビーム17を保持する必要
があり、炉体11内の要所に搬送ビーム17を保持するビー
ム保持機構18を具備している。また、ビーム保持機構18
が搬送ビーム17を直接受ける部分はベアリング19になっ
ており、このベアリング19は搬送ビーム17を保持すると
ともに、搬送ビーム17が前進後退する時は直接接触する
面の摩擦を抑えている。
The glass substrate carrying mechanism 15 has a carrying beam 17, which is arranged on both sides of the heating plate 16 in correspondence with the heating plate 16 and operates synchronously with each other to move up and down. By moving forward and backward, the glass substrate G is sequentially conveyed to the next heating plate 16. In addition,
Since the carrier beam 17 extends long from the inlet 12 to the outlet 13 in the furnace body 11, it is necessary to hold the carrier beam 17, and the carrier beam 17 that holds the carrier beam 17 in a key portion in the furnace body 11 is held. The mechanism 18 is provided. Also, the beam holding mechanism 18
The portion directly receiving the carrier beam 17 is a bearing 19, and this bearing 19 holds the carrier beam 17 and suppresses the friction of the surface that directly contacts when the carrier beam 17 moves forward and backward.

【0010】さらに、炉体11内はパージノズル20によ
り、出口13から入口12に向かってクリーンな気体をパー
ジしている。
Further, the inside of the furnace body 11 is purged with clean gas from the outlet 13 toward the inlet 12 by the purge nozzle 20.

【0011】次に、上記従来例の動作について説明す
る。
Next, the operation of the above conventional example will be described.

【0012】まず、搬送ビーム17が上昇してガラス基板
Gを持上げ、加熱プレート16から一定距離離れた高さで
次の加熱プレート16に向かって定速で搬送する。そし
て、搬送ビーム17はガラス基板Gが次の加熱プレート16
上にきた時点で停止し、搬送ビーム17は下降してガラス
基板Gを加熱プレート16上に載置する。また、下降しき
った搬送ビーム17は、前進し始めた位置まで後退して停
止する。
First, the carrying beam 17 rises to pick up the glass substrate G and carry it at a constant distance from the heating plate 16 toward the next heating plate 16 at a constant speed. Then, the carrier beam 17 is heated by the glass plate G on the next heating plate 16
When stopped, the carrier beam 17 descends to place the glass substrate G on the heating plate 16. Further, the carrier beam 17 that has descended completely retreats to the position where it started to move forward and then stops.

【0013】そして、この一連の動作を繰返すことによ
り、ガラス基板Gを順次搬送する。
By repeating this series of operations, the glass substrate G is sequentially transported.

【0014】また、炉体11内はパージノズル20により出
口13から入口12に向かってクリーンな気体をパージする
とともに、排気ポート14により常時排気され、炉体11内
の雰囲気温度を常に安定でかつ無塵状態に保持されてい
る。
The inside of the furnace body 11 is purged with clean gas from the outlet 13 toward the inlet 12 by the purge nozzle 20, and is constantly exhausted through the exhaust port 14, so that the atmosphere temperature inside the furnace body 11 is always stable and stable. It is kept in a dusty state.

【0015】そして、ガラス基板Gを、炉体11内のガラ
ス基板搬送機構15により加熱プレート16から次の加熱プ
レート16へと順次移動させる。
Then, the glass substrate G is sequentially moved from the heating plate 16 to the next heating plate 16 by the glass substrate transfer mechanism 15 in the furnace body 11.

【0016】[0016]

【発明が解決しようとする課題】上述のように、パージ
ノズル20と排気ポート14により炉体11内の雰囲気を常に
無塵状態にしてはいるものの、炉体11内に配置されてい
るビーム保持機構18のベアリング19の搬送ビーム17との
接触面、回転軸または周囲等から、極わずかではあるが
微小なダストが発生してしまう。そして、本来であれば
排気ポート14から雰囲気中の排気と同時に排気されてし
まうはずであるが、パージノズル20からの気体のパージ
の影響もあり、反対に、ガラス基板G上に舞い上がって
しまい、ガラス基板Gの表面に付着してしまう問題を有
している。
As described above, the purge nozzle 20 and the exhaust port 14 always keep the atmosphere in the furnace body 11 in a dust-free state, but the beam holding mechanism arranged in the furnace body 11 is used. Minute dust is generated from the contact surface of the bearing 19 of the bearing 18 with the carrier beam 17, the rotation axis, the surroundings, etc. Then, although it should have been exhausted from the exhaust port 14 at the same time as the exhaust in the atmosphere, due to the effect of the gas purge from the purge nozzle 20, on the contrary, it rises up on the glass substrate G and the glass It has a problem that it adheres to the surface of the substrate G.

【0017】本発明は、上記問題点に鑑みなされたもの
で、微小なダストがガラス基板の表面に付着するのを防
止することができる基板の加熱方法および加熱炉を提供
することを目的とする。
The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate heating method and a heating furnace capable of preventing minute dust from adhering to the surface of a glass substrate. .

【0018】[0018]

【課題を解決するための手段】請求項1記載の基板の加
熱方法によれば、密閉された炉体内で基板を搬送し、こ
の炉体内でこの搬送された基板を加熱する加熱方法にお
いて、前記炉体内でこの基板の上面に加熱された気体を
供給してこの基板の上面の気圧を周囲より高くした状態
で加熱するものである。
According to the method for heating a substrate of claim 1, the substrate is transferred in a closed furnace, and the transferred substrate is heated in the furnace. The heated gas is supplied to the upper surface of the substrate in the furnace to heat the upper surface of the substrate with the atmospheric pressure higher than the ambient temperature.

【0019】請求項2記載の加熱炉によれば、密閉され
た炉体内を基板搬送機構で基板を送し、この基板搬送機
構により搬送された前記基板を加熱手段で加熱する加熱
装置において、搬送される前記基板の上方に設けられこ
の基板の上面に向けて気体を供給する気体供給孔を有す
るフードと、このフードの中に予め加熱された気体を供
給する気体供給機構とを備え、前記基板の上面および前
記フードの間の気圧を周囲の部分より高くしたものであ
る。
According to the second aspect of the present invention, in the heating device, the substrate is transported by the substrate transport mechanism in the sealed furnace body, and the substrate transported by the substrate transport mechanism is heated by the heating means. A substrate having a gas supply hole for supplying gas toward the upper surface of the substrate and a gas supply mechanism for supplying preheated gas into the hood; The air pressure between the upper surface of the hood and the hood is higher than the surrounding area.

【0020】[0020]

【作用】請求項1記載の基板の加熱方法は、密閉された
炉体内に基板を搬送し、この炉体内でこの搬送された基
板を加熱し、炉体内で基板の上面に加熱された気体を供
給して上面の気圧を周囲より高くした状態で加熱するた
め、基板の上面の雰囲気の気圧が周囲に比べて常に高い
気圧に保持されるため、微小なダストは基板の上部に侵
入しないため、基板にダストが付着しない。
According to the first aspect of the present invention, there is provided a method for heating a substrate, wherein the substrate is transferred into a hermetically sealed furnace body, the transferred substrate is heated in the furnace body, and the gas heated on the upper surface of the substrate is heated in the furnace body. Since it is supplied and heated with the atmospheric pressure of the upper surface higher than the surroundings, the atmospheric pressure of the atmosphere on the upper surface of the substrate is always maintained at a higher atmospheric pressure than the surroundings, and since minute dust does not enter the upper part of the substrate, No dust adheres to the substrate.

【0021】請求項2記載の加熱炉は、密閉された炉体
内に基板搬送機構で基板を搬送し、この基板搬送機構に
より搬送された基板を加熱手段で加熱し、基板の上面に
向けてフードの気体供給孔からあらかじめ予熱された気
体を供給するため、基板の上部とフードに囲まれた雰囲
気の気圧が周囲の気圧より常に高く保持され、基板とフ
ードとの間からの加熱された気体が常に流れ出る状態に
なり、基板搬送機構から発生した微小なダストは、基板
の上部とフードとに囲まれた雰囲気に侵入しないため、
基板にダストが付着しない。
In the heating furnace according to the second aspect of the present invention, the substrate is transferred by the substrate transfer mechanism into the closed furnace, the substrate transferred by the substrate transfer mechanism is heated by the heating means, and the hood is directed toward the upper surface of the substrate. Since the preheated gas is supplied from the gas supply hole of, the atmospheric pressure of the atmosphere surrounded by the upper part of the substrate and the hood is always kept higher than the ambient pressure, and the heated gas from between the substrate and the hood is It will always flow out, and the minute dust generated from the substrate transfer mechanism will not enter the atmosphere surrounded by the upper part of the substrate and the hood.
No dust adheres to the substrate.

【0022】[0022]

【実施例】以下、本発明の一実施例を図1に示す加熱炉
を参照して説明する。なお、図2および図3に示す従来
例に対応する部分には、同一符号を付して説明する。
EXAMPLES An example of the present invention will be described below with reference to the heating furnace shown in FIG. The parts corresponding to those of the conventional example shown in FIGS. 2 and 3 are designated by the same reference numerals for description.

【0023】無塵状態の炉体11は、図2に示す場合と同
様に、長手方向の一端および他端に入口12および出口13
を有しており、下部には排気ポート14が形成されてい
る。また、これら入口12および出口13間には加熱対象の
ガラス基板Gを搬送するガラス基板搬送機構15が配設さ
れ、このガラス基板搬送機構15間にガラス基板Gを加熱
する加熱手段としての加熱プレート16が、ガラス基板G
の搬送方向に沿って複数枚、配設されている。
As in the case shown in FIG. 2, the dust-free furnace body 11 has an inlet 12 and an outlet 13 at one end and the other end in the longitudinal direction.
And an exhaust port 14 is formed in the lower part. Further, a glass substrate transfer mechanism 15 for transferring the glass substrate G to be heated is arranged between the inlet 12 and the outlet 13, and a heating plate as a heating means for heating the glass substrate G between the glass substrate transfer mechanisms 15. 16 is the glass substrate G
A plurality of sheets are arranged along the conveyance direction of.

【0024】そして、ガラス基板搬送機構15は、搬送ビ
ーム17を有し、この搬送ビーム17は加熱プレート16に対
応してこの加熱プレート16の両側に配置され、互いに同
期運転をし、上下動、前進後退することにより、ガラス
基板Gを順次、次の加熱プレート16へ搬送する。なお、
搬送ビーム17は炉体11内の入口12から出口13に向かって
長く延びているため、この搬送ビーム17を保持する必要
があり、炉体11内の要所に搬送ビーム17を保持するビー
ム保持機構18を具備している。また、ビーム保持機構18
が搬送ビーム17を直接受ける部分はベアリング19になっ
ており、このベアリング19は搬送ビーム17を保持すると
ともに、搬送ビーム17が前進後退する時は直接接触する
面の摩擦を抑えている。
The glass substrate carrying mechanism 15 has a carrying beam 17, which is arranged on both sides of the heating plate 16 in correspondence with the heating plate 16 and operates synchronously with each other and moves up and down. By moving forward and backward, the glass substrate G is sequentially conveyed to the next heating plate 16. In addition,
Since the carrier beam 17 extends long from the inlet 12 to the outlet 13 in the furnace body 11, it is necessary to hold the carrier beam 17, and the carrier beam 17 that holds the carrier beam 17 in a key portion in the furnace body 11 is held. The mechanism 18 is provided. Also, the beam holding mechanism 18
The portion directly receiving the carrier beam 17 is a bearing 19, and this bearing 19 holds the carrier beam 17 and suppresses the friction of the surface that directly contacts when the carrier beam 17 moves forward and backward.

【0025】さらに、加熱プレート16の上部には、ガラ
ス基板Gを囲むような状態でフード21が設けられてお
り、フード21にはガラス基板Gの搬送方向の両側に、間
隙を介してガラス基板搬送機構15の両側に沿って下縁部
22が形成されている。また、フード21は気体供給筒部23
を有し、この気体供給筒部23には予め加熱された気体を
供給する気体供給機構としてのノズル24が形成されてい
る。さらに、フード21の下面には、気体供給筒部23から
の気体を供給する細かい穴の気体供給孔25が多数穿設さ
れたパンチングプレート26を有している。
Further, a hood 21 is provided above the heating plate 16 so as to surround the glass substrate G, and the hood 21 is provided on both sides of the glass substrate G in the carrying direction with a gap therebetween. Lower edges along both sides of the transport mechanism 15
22 are formed. In addition, the hood 21 is a gas supply tube portion 23.
A nozzle 24 as a gas supply mechanism for supplying preheated gas is formed in the gas supply cylinder portion 23. Further, on the lower surface of the hood 21, there is provided a punching plate 26 having a large number of fine gas supply holes 25 for supplying gas from the gas supply cylinder portion 23.

【0026】次に、上記実施例の動作について説明す
る。
Next, the operation of the above embodiment will be described.

【0027】まず、搬送ビーム17が上昇してガラス基板
Gを持上げ、加熱プレート16から一定距離離れた高さで
次の加熱プレート16に向かって定速で搬送する。そし
て、搬送ビーム17はガラス基板Gが次の加熱プレート16
上にきた時点で停止し、搬送ビーム17は下降してガラス
基板Gを加熱プレート16上に載置する。また、下降しき
った搬送ビーム17は、前進し始めた位置まで後退して停
止する。
First, the carrying beam 17 rises to pick up the glass substrate G and carry it at a constant distance from the heating plate 16 toward the next heating plate 16 at a constant height. Then, the carrier beam 17 is heated by the glass plate G on the next heating plate 16
When stopped, the carrier beam 17 descends to place the glass substrate G on the heating plate 16. Further, the carrier beam 17 that has descended completely retreats to the position where it started to move forward and then stops.

【0028】そして、この一連の動作を繰返すことによ
り、ガラス基板Gを順次搬送する。
By repeating this series of operations, the glass substrate G is sequentially transported.

【0029】また、ノズル24から供給される無塵状態の
クリーンな加熱された気体を満遍なく供給し、フード21
内の気体供給筒部23の気圧を高くし、気体供給孔25から
ガラス基板Gの上面に、あらかじめ加熱した気体を供給
して、フード21のパンチングプレート26とガラス基板G
との間の空間の気圧をガラス基板搬送機構15などが位置
している空間より高い気圧にする。
Further, the dust-free clean heated gas supplied from the nozzle 24 is evenly supplied to the hood 21.
The air pressure of the gas supply tube portion 23 in the inside is increased, and the preheated gas is supplied from the gas supply hole 25 to the upper surface of the glass substrate G to punch the punching plate 26 of the hood 21 and the glass substrate G.
The atmospheric pressure in the space between and is made higher than that in the space where the glass substrate transport mechanism 15 and the like are located.

【0030】そして、ガラス基板Gを、炉体11内のガラ
ス基板搬送機構15により加熱プレート16から次の加熱プ
レート16へと順次移動させる。
Then, the glass substrate G is sequentially moved from the heating plate 16 to the next heating plate 16 by the glass substrate transfer mechanism 15 in the furnace body 11.

【0031】上記のように、気体供給孔25からガラス基
板Gの上面に、あらかじめ加熱した気体を供給して、フ
ード21のパンチングプレート26とガラス基板Gとの間の
空間の気圧をガラス基板搬送機構15などが位置している
空間より高い気圧にすることにより、気体の流れはフー
ド21の気体供給筒部23から気体供給孔25を介してガラス
基板G上面に流れ、ガラス基板Gおよび下縁部22の間隙
からガラス基板搬送機構15などが位置している空間に流
れるので、たとえばビーム保持機構18のベアリング19の
搬送ビーム17との接触面、回転軸または周囲等から、微
小なダストが飛散しても、ガラス基板G側に流れること
なく排気ポート14により排気される。このため、ガラス
基板搬送機構15の摺動部等から発生した微小なダスト
は、舞い上がってきても流れ出てくる気流により押し戻
され、ガラス基板Gの上部への侵入ができない。
As described above, the preheated gas is supplied to the upper surface of the glass substrate G from the gas supply hole 25, and the atmospheric pressure of the space between the punching plate 26 of the hood 21 and the glass substrate G is transferred to the glass substrate. By making the pressure higher than the space where the mechanism 15 and the like are located, the gas flow flows from the gas supply cylinder portion 23 of the hood 21 to the upper surface of the glass substrate G through the gas supply holes 25, and the glass substrate G and the lower edge. Since it flows from the gap of the portion 22 to the space where the glass substrate transport mechanism 15 is located, for example, minute dust is scattered from the contact surface of the bearing 19 of the beam holding mechanism 18 with the transport beam 17, the rotating shaft or the surroundings. However, the gas is exhausted through the exhaust port 14 without flowing to the glass substrate G side. For this reason, the minute dust generated from the sliding portion of the glass substrate transport mechanism 15 is pushed back by the flowing airflow even when it rises, and cannot enter the upper portion of the glass substrate G.

【0032】したがって、微小なダストがガラス基板G
の表面に付着することがなくなる。
Therefore, minute dust is generated on the glass substrate G.
It will not adhere to the surface of.

【0033】[0033]

【発明の効果】請求項1記載の基板の加熱方法によれ
ば、密閉された炉体内に基板を搬送し、この炉体内でこ
の搬送された基板を加熱し、炉体内で基板の上面に加熱
された気体を供給して上面の気圧を周囲より高くした状
態で加熱するため、基板の上面の雰囲気の気圧が周囲に
比べて常に高い気圧に保持されるため、微小なダストは
基板の上部に侵入しないため、基板にダストが付着しな
い。
According to the substrate heating method of the first aspect of the present invention, the substrate is transferred into a hermetically sealed furnace body, the transferred substrate is heated in the furnace body, and the upper surface of the substrate is heated in the furnace body. The atmospheric pressure of the atmosphere on the upper surface of the substrate is always kept higher than that of the surroundings by supplying the generated gas to heat the upper surface at a pressure higher than that of the surroundings. Since it does not enter, dust does not adhere to the substrate.

【0034】請求項2記載の加熱炉によれば、密閉され
た炉体内に基板搬送機構で基板を搬送し、この基板搬送
機構により搬送された基板を加熱手段で加熱し、基板の
上面に向けてフードの気体供給孔からあらかじめ予熱さ
れた気体を供給するため、基板の上部とフードに囲まれ
た雰囲気の気圧が周囲の気圧より常に高く保持され、基
板とフードとの間からの加熱された気体が常に流れ出る
状態になり、基板搬送機構から発生した微小なダスト
は、基板の上部とフードとに囲まれた雰囲気に侵入しな
いため、基板にダストが付着しない。
According to the heating furnace of the second aspect, the substrate is carried by the substrate carrying mechanism into the closed furnace body, and the substrate carried by the substrate carrying mechanism is heated by the heating means to face the upper surface of the substrate. Since the preheated gas is supplied from the gas supply hole of the hood, the atmospheric pressure of the atmosphere surrounded by the upper part of the substrate and the hood is always kept higher than the atmospheric pressure of the surroundings, and the space between the substrate and the hood is heated. The gas always flows out, and the minute dust generated from the substrate transfer mechanism does not enter the atmosphere surrounded by the upper portion of the substrate and the hood, so that the dust does not adhere to the substrate.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の加熱炉の一実施例を示す炉体内を示す
説明図である。
FIG. 1 is an explanatory view showing the inside of a furnace showing an embodiment of a heating furnace of the present invention.

【図2】従来例の加熱炉の炉体内を示す説明図である。FIG. 2 is an explanatory view showing a furnace body of a conventional heating furnace.

【図3】同上加熱炉の炉体内を示す説明図である。FIG. 3 is an explanatory view showing the inside of the heating furnace of the same heating furnace.

【符号の説明】[Explanation of symbols]

11 炉体 15 ガラス基板搬送機構 16 加熱手段としての加熱プレート 21 フード 24 気体供給機構としてのノズル 25 気体供給孔 G ガラス基板 11 furnace body 15 glass substrate transfer mechanism 16 heating plate as heating means 21 hood 24 nozzle as gas supply mechanism 25 gas supply hole G glass substrate

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 密閉された炉体内で基板を搬送し、この
炉体内でこの搬送された基板を加熱する加熱方法におい
て、 前記炉体内でこの基板の上面に加熱された気体を供給し
てこの基板の上面の気圧を周囲より高くした状態で加熱
することを特徴とする基板の加熱方法。
1. A heating method for transporting a substrate in a hermetically sealed furnace body and heating the transported substrate in the furnace body, wherein heated gas is supplied to the upper surface of the substrate in the furnace body. A method for heating a substrate, characterized in that the substrate is heated while the atmospheric pressure on the upper surface of the substrate is higher than the ambient pressure.
【請求項2】 密閉された炉体内を基板搬送機構で基板
を搬送し、この基板搬送機構により搬送された前記基板
を加熱手段で加熱する加熱装置において、 搬送される前記基板の上方に設けられこの基板の上面に
向けて気体を供給する気体供給孔を有するフードと、 このフードの中に予め加熱された気体を供給する気体供
給機構とを備え、 前記基板の上面および前記フードの間の気圧を周囲の部
分より高くしたことを特徴とする加熱炉。
2. A heating device in which a substrate is transported by a substrate transport mechanism in a hermetically sealed furnace body, and the substrate transported by the substrate transport mechanism is heated by a heating means. The heating device is provided above the transported substrate. A hood having gas supply holes for supplying gas toward the upper surface of the substrate, and a gas supply mechanism for supplying preheated gas into the hood are provided, and the air pressure between the upper surface of the substrate and the hood is provided. The heating furnace is characterized in that the height is higher than the surrounding area.
JP33621692A 1992-12-16 1992-12-16 Heating method and heating furnace for substrate Pending JPH06186549A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33621692A JPH06186549A (en) 1992-12-16 1992-12-16 Heating method and heating furnace for substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33621692A JPH06186549A (en) 1992-12-16 1992-12-16 Heating method and heating furnace for substrate

Publications (1)

Publication Number Publication Date
JPH06186549A true JPH06186549A (en) 1994-07-08

Family

ID=18296839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33621692A Pending JPH06186549A (en) 1992-12-16 1992-12-16 Heating method and heating furnace for substrate

Country Status (1)

Country Link
JP (1) JPH06186549A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002343708A (en) * 2001-05-21 2002-11-29 Toshiba Corp Substrate processing system and heat treating method
JP2003107480A (en) * 2001-09-28 2003-04-09 Toshiba Corp Method for manufacturing liquid crystal display device
JP2006343772A (en) * 2006-08-17 2006-12-21 Hitachi Ltd Drying apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002343708A (en) * 2001-05-21 2002-11-29 Toshiba Corp Substrate processing system and heat treating method
JP2003107480A (en) * 2001-09-28 2003-04-09 Toshiba Corp Method for manufacturing liquid crystal display device
JP4625601B2 (en) * 2001-09-28 2011-02-02 東芝モバイルディスプレイ株式会社 Manufacturing method of liquid crystal display device
JP2006343772A (en) * 2006-08-17 2006-12-21 Hitachi Ltd Drying apparatus

Similar Documents

Publication Publication Date Title
JP4034860B2 (en) Tray transfer film forming apparatus and auxiliary chamber
JP2009038231A (en) Substrate supporting mechanism, decompression drying apparatus, and substrate processor
JP6379322B1 (en) Deposition equipment
KR100367963B1 (en) Coating apparatus for semiconductor process
WO2015098892A1 (en) Production system for printing electronic devices
JP4384685B2 (en) Normal pressure drying apparatus, substrate processing apparatus, and substrate processing method
JP2008297584A (en) Film-forming apparatus
KR20080059070A (en) Decompression drying device
JP4384686B2 (en) Normal pressure drying apparatus, substrate processing apparatus, and substrate processing method
KR20120090018A (en) Decompression drier
JP2001233452A (en) Constant point carrying device for thin plate
KR101568050B1 (en) Substrate processing apparatus
JPH06186549A (en) Heating method and heating furnace for substrate
JPH05175162A (en) Dry etching system
JP4726124B2 (en) Application system
KR20130115827A (en) Apparatus and method for treating substrate
KR20110066864A (en) Substrate processing apparatus, substrate processing method and recording medium storing program for executing the substrate processing method
JP2004146184A (en) Apparatus for manufacturing organic el element
JP3461434B2 (en) Glass substrate cooling device
JP2004107006A (en) Conveyer for substrate
JP4175783B2 (en) Spacer spraying device and liquid crystal display device production system
JPH0778749A (en) Heat-treating device
WO2006134818A1 (en) Film forming device, thin-film manufacturing apparatus, and film forming method
JP2000058624A (en) Semiconductor production device
JP2001077172A (en) Substrate processing apparatus, substrate transfer member, and manufacture of electronic component