JP2004146184A - Apparatus for manufacturing organic el element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing an organic EL element eliminating the necessity of a pressure reduction device (an evacuation device) for plasma cleaning under pressure reduction to reduce a cost, reducing time and effort for removing contamination of a substrate caused by impurities on the inner wall in a vacuum bath or impurities on the inner wall, shortening tact time by continuous production, enhancing productivity in production, and enhancing quality. <P>SOLUTION: The apparatus for manufacturing the organic EL element is equipped with a cleaning device of the substrate in which an ITO film is formed on a base material made of glass or a resin material and a film forming device for forming at least an organic compound thin film on the ITO film. The cleaning device is a plasma cleaning device for cleaning the substrate with plasma generated near the atmospheric pressure. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an apparatus for manufacturing an organic EL (electroluminescence) element provided with an apparatus for cleaning a substrate by atmospheric pressure plasma.
[0002]
[Prior art]
In recent years, attention has been paid to an organic EL element including an organic material layer, and research is proceeding toward use for a display or the like. An organic EL element generally has a structure in which an organic material layer such as an anode, a light-emitting layer, and a cathode are stacked on a substrate, and these layers are formed on the substrate by a vacuum evaporation method, a sputtering method, or the like.
[0003]
A substrate used for an organic EL device is often supplied in a state where a transparent electrode such as an ITO film (a conductive film made of indium oxide doped with tin) is formed on the surface thereof. The substrate on which the film has been formed is ultrasonically cleaned in an organic solvent, and subsequently, the substrate is cleaned by a UV ozone cleaning device or a plasma cleaning device in a vacuum, and then transferred from the cleaning device to a film forming device. An organic layer and a cathode were deposited on the electrodes in the film forming apparatus.
[0004]
As a specific method, (1) a method in which a substrate is subjected to plasma surface treatment in a vacuum chamber and then a film is formed in the same vacuum chamber (Japanese Patent Laid-Open No. 7-142168); A method is disclosed in which, after a surface treatment is performed, the film is conveyed to a film forming chamber without being exposed to the atmosphere, and a film is formed in the film forming chamber (Japanese Patent Application Laid-Open No. 8-222368).
[0005]
[Patent Document 1]
JP-A-7-142168 (paragraphs 0011 and 0012)
[0006]
[Patent Document 2]
JP-A-8-222368 (paragraphs 0029 and 0041, FIG. 2)
FIG. 1 is a conceptual diagram of a conventional organic EL element manufacturing apparatus.
[0007]
Here, in order to make the invention easy to understand, a concept of a conventional organic EL element manufacturing apparatus will be described with reference to FIG.
[0008]
First, a substrate (hereinafter referred to as a substrate) of an organic EL element in which a transparent electrode made of an ITO film (a conductive film made of indium oxide doped with tin) is formed in a solvent 22 of a solvent tank 21 of the ultrasonic cleaning apparatus 2 under atmospheric pressure. The substrate 11 is cleaned by the vibration of the ultrasonic vibrator 23.
[0009]
Next, the substrate 11 is transferred to the plasma cleaning device 3 by a transfer means (not shown), a predetermined gas is supplied by the gas supply device 34 to the vacuum chamber 32, which has been depressurized by the decompression device (vacuum exhaust device) 71, and A high frequency voltage is applied to the electrodes of the plasma cleaning means 31, and the substrate 11 is cleaned by the plasma generated by the plasma cleaning means 31.
[0010]
Next, the substrate 11 is transferred to the organic compound film layer vapor deposition device 4 in which the pressure is reduced by the pressure reducing device 72 by a transport means (not shown), and the light emitting layer and the like are vapor-deposited on the substrate by the organic compound film layer vapor deposition device 41.
[0011]
Next, the substrate 101 on which the light emitting layer and the like have been deposited is transferred to the metal film layer deposition device 5 decompressed by the decompression device 73 by a transport means (not shown), and the cathode layer is deposited on the substrate by the metal film layer deposition means 51. .
[0012]
Next, the substrate 102 on which the cathode layer has been deposited is transferred to the sealing device 6 by a transport means (not shown), the substrate 102 on which the cathode layer has been deposited is sealed with a sealing tube 61, and the substrate 103 sealed in a can is removed. obtain.
[0013]
Reference numerals 81 to 88 denote shutters for maintaining the degree of vacuum (reduced pressure) of each device when the substrate or the like is transferred between the above-described devices.
[0014]
The plasma cleaning apparatus 3 will be described in detail. Conventionally, plasma could not be generated unless the plasma was in a reduced pressure state. Therefore, the plasma cleaning means 31 was housed in a vacuum chamber 32, and the shutters 81 and 82 of the vacuum chamber 32 were moved in and out of the substrate 11. It is opened and closed to form a sealed state, and the inside air and gas are exhausted by operating the pressure reducing device 71 to evacuate the vacuum chamber 32. Then, a predetermined gas is supplied by the gas supply device 34, and the high frequency power supply 33 is operated to perform plasma cleaning. By generating plasma between the electrodes of the means 31 and passing the substrate 11 into the plasma atmosphere between the electrodes, organic substances and the like on the substrate surface are decomposed and ashed, and the substrate is washed.
[0015]
[Problems to be solved by the invention]
However, in the conventional methods described above such as (1) and (2), since the substrate is cleaned in a sealed state inside the vacuum chamber in which the plasma is generated, an expensive vacuum chamber and a decompression device are required for cleaning, and Since the plasma reaches the inner wall, impurities are generated from the material forming the inner wall, or impurities obtained by decomposing and ashing the substrate are deposited inside the substrate, and these impurities adhere to the substrate and contaminate the substrate. There was a disadvantage that.
[0016]
Particularly, when the organic EL element is manufactured continuously, impurities are continuously generated. Therefore, the inside of a vacuum chamber or the like is gradually contaminated, and the cleaning effect of the substrate is gradually reduced. There is a drawback in that the entire interior must be frequently cleaned, which is troublesome.
[0017]
In the method (1), since the substrate is cleaned and formed in the same vacuum chamber, the time required for the steps (cleaning and film formation) in the vacuum chamber becomes long. I couldn't shorten it.
[0018]
In view of the above problems, a decompression device (vacuum evacuation device) for plasma cleaning under reduced pressure is not required, and cost is reduced, and substrate contamination due to impurities on the inner wall of the vacuum chamber and labor for removing impurities on the inner wall are reduced. It is another object of the present invention to provide an apparatus for manufacturing an organic EL device having a shorter cycle time, a higher productivity at the time of production, and a higher quality organic EL element.
[0019]
[Means for Solving the Problems]
The above object is achieved by the following means. That is,
(1) An organic EL device comprising: a device for cleaning a substrate having an ITO film formed on a substrate made of glass or a resin material; and a film forming device for forming at least an organic compound film layer on the ITO film. An apparatus for manufacturing an organic EL element, wherein the cleaning apparatus is a plasma cleaning apparatus for cleaning the substrate with plasma generated near the atmospheric pressure.
[0020]
(2) In an organic EL device manufacturing apparatus including a substrate cleaning apparatus and a film forming apparatus, a plasma in which an ITO film is formed on a substrate made of glass or a resin material at a pressure close to atmospheric pressure. A plasma cleaning apparatus having a plasma cleaning means for cleaning with an organic compound film layer, an organic compound film layer vapor deposition apparatus for forming an organic compound film layer on the cleaned ITO film by a vacuum vapor deposition method, and It is characterized by comprising, in this order, a metal film layer deposition device for forming a metal film layer by a vacuum deposition method, and a sealing device for sealing a substrate on which the metal film layer is formed under an inert gas atmosphere. For manufacturing organic EL elements.
[0021]
(3) In an apparatus for manufacturing an organic EL device including a substrate cleaning device and a film forming device, a plasma in which an ITO film is formed on a substrate made of glass or a resin material at a pressure close to atmospheric pressure. Plasma cleaning device having a plasma cleaning means for cleaning the substrate, an organic compound film layer patterning device for forming an organic compound film layer on the cleaned ITO film by an inkjet method, and a vacuum on the formed organic compound film layer. A metal film layer vapor deposition device for forming a metal film layer by a vapor deposition method, and a sealing device for sealing a substrate on which the metal film layer is formed under an inert gas atmosphere are provided in this order. Organic EL element manufacturing equipment.
[0022]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described. Note that the description in this column does not limit the technical scope of the claims and the meaning of terms.
[0023]
FIG. 2 is a schematic diagram of a layer configuration of the organic EL element.
An outline of an example of the layer configuration of the organic EL device manufactured by the organic EL device manufacturing apparatus of the present invention will be described with reference to FIG.
[0024]
The organic EL element 10 includes a substrate 11, an organic compound film layer 12, and an electrode 13 (cathode) which is a metal film layer in this order.
[0025]
The substrate 11 includes a base material 111 and a transparent electrode 112 (anode) formed of an ITO film (a conductive film made of indium oxide doped with tin) formed on the base material 111. Is composed of a hole injection layer 121 formed on the transparent electrode 112, a light emitting layer 122 formed on the hole injection layer 121, and an electron injection layer 123 formed on the light emitting layer 122. The electrode 13 (cathode) is constituted by a metal film layer formed on the electron injection layer 123.
[0026]
The organic EL element 10 according to the present invention is configured such that a power supply (not shown) is connected to the transparent electrode 112 and the electrode 13 (cathode), and at least one organic compound film of the organic compound film layer 12 is supplied by the supplied current. An element in which the layer becomes a light emitting layer and emits light.
[0027]
Here, the light emission of the organic EL element 10 may be light emission derived from fluorescence or light emission derived from phosphorescence.
[0028]
The organic EL element 10 may be a substrate and a film formed on the substrate other than the above-described configuration such as a configuration in which a hole transport layer is inserted between a hole injection layer and a light emitting layer. Any structure may be used as long as it has an organic compound film layer including a light emitting layer on the substrate 11 having the transparent electrode 112 (anode) made of an ITO film, and further has a metal film layer thereon.
[0029]
Hereinafter, a manufacturing apparatus for manufacturing an organic EL device as shown in FIG. 2 will be described as an example.
[0030]
FIG. 3 is a conceptual diagram of an apparatus for manufacturing an organic EL element according to one embodiment of the present invention.
[0031]
Hereinafter, an embodiment of a manufacturing apparatus for manufacturing an organic EL element, which includes a cleaning apparatus for generating a plasma near the atmospheric pressure and cleaning a substrate of the organic EL element, will be described with reference to FIG.
[0032]
Here, the vicinity of the atmospheric pressure refers to a pressure (atmospheric pressure) of 20 KPa to 110 KPa, and is preferably 93 KPa to 104 KPa in order to obtain the effect of the present invention.
[0033]
The organic EL element 10 as shown in FIG. 2 is manufactured using a manufacturing apparatus 1 as shown in FIG.
[0034]
The organic EL element manufacturing apparatus 1 of the present embodiment is an apparatus for cleaning and forming a film on a substrate 11 having a transparent electrode (ITO film) 112 formed on a surface of a base material 111 shown in FIG. It does not include an electrode forming device.
[0035]
The manufacturing apparatus 1 includes an ultrasonic cleaning apparatus 2 for cleaning a substrate 11 having an ITO film 112 formed on a base material 111 made of glass or a resin material with a solvent 22 and an ultrasonic cleaning apparatus 11 for cleaning the substrate 11 subjected to ultrasonic cleaning near atmospheric pressure. A plasma cleaning device 3 that is a device for cleaning a substrate to be cleaned by the plasma generated in step 1; and a film forming device that forms an organic compound layer film on the ITO film of the substrate 11 that has been plasma cleaned by a vacuum deposition method. The organic compound film layer (the hole injection layer 121, the light emitting layer 122, and the electron injection layer 123 in FIG. 2) has a vapor deposition device 4 (hereinafter, referred to as a vapor deposition device 4), and vacuum deposition is performed on the formed organic compound film layer. A metal film layer vapor deposition device 5 (hereinafter, referred to as a vapor deposition device 5) for forming a metal film layer (electrode 13 in FIG. 2) by a method and a substrate on which the metal film layer is formed are sealed in an inert gas atmosphere. Sealing device 6 and ultrasonic cleaning The transfer paths 91-93 for the substrate 2, the plasma cleaning device 3, the vapor deposition device 4, the vapor deposition device 5, and the sealing device 6, which communicate with each other, maintain the airtightness of each device, and serve as the substrate entrance and exit. And transport means 9 for transporting substrates and the like.
[0036]
The ultrasonic cleaning device 2 immerses the substrate 11 in the solvent 22 of the solvent tank 21 and cleans the substrate 11 by the vibration of the ultrasonic vibrator 23.
[0037]
The plasma cleaning device 3 includes gas supply devices 341 and 342, mixes argon and oxygen gas supplied from the gas supply devices 341 and 342, and enters the cleaning chamber 35 at a predetermined flow rate by a flow control device (not shown). The mixed gas can be introduced in the direction of the arrow and guided between a pair of electrodes described later.
[0038]
The flow rate of each argon gas is controlled by a flow rate control device (not shown) so as to contain 90% by volume or more, preferably 95% by volume or more with respect to 100% by volume of the mixed gas (mixed gas of inert gas and reactive gas).
[0039]
Further, the plasma cleaning apparatus 3 includes a plasma cleaning unit 31 installed in a cleaning chamber 35, and is capable of cleaning the substrate 11 by generating plasma inside the plasma generating unit 311 of the plasma cleaning unit 31. .
[0040]
This plasma cleaning means 31 has electrodes 331 and 332 covered with a pair of dielectrics (333 and 334 in FIG. 4) disposed at a predetermined distance from each other, and one of the electrodes 332 has a frequency of 100 KHz to 150 MHz. And the other 331 is grounded so that a high-frequency voltage can be applied between its electrodes.
[0041]
Then, the plasma cleaning unit 31 causes the plasma generation unit 311 between the electrodes 331 and 332 to contain a mixed gas of argon and oxygen supplied from the gas supply devices 341 and 342 (to allow the mixed gas to pass in the direction of the arrow) so that the high frequency is generated. A glow discharge is generated by an electric field to excite argon and oxygen molecules, so that the mixed gas is turned into plasma near the atmospheric pressure in the plasma generation unit 311.
[0042]
The substrate 11, which is transported below the plasma generating unit 311 by the transport means 9 with the ITO film surface facing upward, is sprayed with the plasma-mixed gas onto the ITO film surface, and organic substances and the like on the surface are decomposed and ashed. At the same time, the surface is cleaned by a slight shaving.
[0043]
Exhaust gas containing impurities decomposed and incinerated by organic substances is discharged to the atmosphere from an exhaust port (not shown) through an exhaust gas treatment device.
[0044]
Here, plasma is generated using a mixed gas of argon and oxygen because an example is described in which an ITO film is used for the transparent electrode. However, the specific type of gas is the type of the electrode provided on the substrate. What is necessary is just to select suitably according to a kind, for example, may be only argon, or may be only oxygen.
[0045]
Further, the plasma cleaning means 31 may not be installed in the closed cleaning chamber 35 but may be installed in an open state in an environment where the number of floating dust is controlled at a predetermined cleaning degree. In this case, deposition of impurities and the like in the plasma cleaning device 3 is further eliminated.
[0046]
The cleaned substrate 101 is transferred by the transfer means 9 through the transfer path 91 to the organic compound film layer deposition apparatus 4.
[0047]
The transfer paths 91 to 93 are transfer paths for substrates and the like disposed between the respective devices from the plasma cleaning device 3 to the sealing device 6, and are provided with a substrate transfer means 9 described later therein. The shutters 81 to 89, which will be described later, are provided at the connection between the camera and each device.
[0048]
Further, inside the transfer path 91, a substrate inverting means (not shown) for inverting the substrate 11 upside down is provided.
[0049]
The transfer paths 91 and 93 are connected to a decompression device (not shown) or decompression devices 72 and 73, respectively, and the insides of the transfer paths 91 and 93 are preliminarily depressurized, and the shutter 83 on the entrance side of the vapor deposition device 4 or the vapor deposition device When the shutter 86 on the outlet side of 5 is opened, the vacuum pressure in the vapor deposition devices 4 and 5 may not be reduced.
[0050]
The shutters 81 to 89 are openable and closable. When opened, the shutters 81 to 89 have an opening size that allows the substrates (11, 101, 102, 103, 104) at the respective manufacturing stages to pass, and when closed, each device is sealed.
[0051]
The entrance-side shutter 82 and exit-side shutter 83 of the transfer path 91 in the substrate transport direction, the entrance-side shutter 84 and exit-side shutter 85 of the transfer path 92, and the entrance-side shutter 86 and exit-side shutter 87 of the transfer path 93 All are closed except when passing, and when one is open when the substrate passes, the other is always closed.
[0052]
As a result, it is possible to prevent gas and impurities from flowing in and out of the process before and after the transfer path from entering and exiting, changing the pressure, and releasing the gas and impurities to the atmosphere.
[0053]
The shutter 81 is opened only when the substrate 11 is supplied to the plasma cleaning apparatus 3, and the shutter 88 is opened only when the sealed substrate 104 is collected, thereby preventing entry of dust and the like.
[0054]
By providing the transfer path and the shutter as described above, the inflow and outflow of the atmosphere and the gas between the apparatuses from the outside of the cleaning chamber 35 due to the movement of the substrate can be prevented, and the pressure is kept substantially constant.
[0055]
FIG. 4 is a conceptual diagram illustrating the plasma cleaning means.
In the plasma cleaning unit 31, a mixed gas of oxygen and argon gas supplied from the gas supply units 341 and 342 is injected in the direction of the arrow, turned into plasma between the electrodes 331 and 332, and transferred by the transfer unit 9 below the electrodes. It is sprayed on the substrate 11 to clean the surface of the substrate.
[0056]
The electrodes 331 and 332 can be made of a metal such as titanium, silver, platinum, stainless steel, aluminum or iron, a composite material of iron and ceramics, or a composite material of aluminum and ceramics. Among them, stainless steel is preferable because of its good workability. The dielectrics 333 and 334 are coated on the peripheral surface of the electrode, and a cooling unit using cooling water (not shown) is provided inside the electrode, and is cooled at least during discharge.
[0057]
The dielectrics 333 and 334 are ceramics-coated dielectrics having a thickness of 0.2 to 3 mm, preferably 0.5 to 1.5 mm, obtained by thermally spraying ceramics and sealing with an inorganic compound sealing material, As the ceramic material, alumina, silicon nitride, or the like can be used, and among them, alumina is preferable because it has good workability.
[0058]
Further, a lining treated dielectric material provided with an inorganic material by lining may be used, and silicate glass, borate glass, phosphate glass, germanate glass, tellurite glass, Aluminate-based glass, vanadate-based glass, and the like can be used, and among them, borate-based glass is preferable because of good workability.
[0059]
Then, as described above, one electrode 331 is grounded, and the other electrode 332 is connected to the high frequency power supply device 33.
[0060]
The high-frequency power supply device 33 has a voltage of 10 V to 10 KV and a frequency of 100 KHz to 150 MHz. An electronic high-frequency power supply (13.56 MHz) or the like can be used, and the transmission pattern may be continuous transmission in the form of a continuous sine wave or transmission in which ON / OFF is performed intermittently. However, for good cleaning, ON / OFF is required. Is preferably intermittently transmitted.
[0061]
The gap d between the two electrodes is set to 0.5 to 20 mm, preferably 0.5 to 1.5 mm in order to perform a uniform and stable discharge.
[0062]
Another embodiment of the plasma cleaning apparatus will be described.
FIG. 5 is a conceptual diagram of a cleaning device for cleaning by passing a substrate between electrodes, and FIG. 6 is a conceptual diagram of a cleaning device for cleaning a web-shaped substrate.
[0063]
First, a plasma cleaning apparatus of another embodiment for cleaning by passing a substrate between electrodes will be described with reference to FIG.
[0064]
A mixed gas of oxygen and argon gas supplied from the gas supply devices 341 and 342 is supplied to the plasma generation unit 339, and is formed into plasma between the electrodes 331 and 332 to clean the substrate 11 transported between the electrodes. ing.
[0065]
The electrodes 331 and 332, the dielectrics 333 and 334, and the high-frequency power supply 33 can be the same as those described in the description of FIG.
[0066]
The gap d between the two electrodes is set to 10 to 20 mm in order to allow a uniform and stable discharge and transport the substrate.
[0067]
When an apparatus for manufacturing an organic EL element is configured using this plasma cleaning apparatus, for example, the same ultrasonic cleaning apparatus as described with reference to FIG. 3, an organic compound film layer deposition apparatus, and a metal film layer deposition The device, the sealing device, the transfer path, the shutter, and the transport means can be used.
[0068]
Next, another embodiment of a plasma cleaning apparatus for cleaning a web-shaped substrate will be described with reference to FIG.
[0069]
Reference numeral 7 denotes a plasma cleaning apparatus for cleaning a web-like substrate. A web-like substrate 113 on which a patterned ITO film is formed on a web-like base material made of resin is guided by guide rollers 337 in a cleaning chamber 35. The sheet is conveyed while being wound around a grounded roll electrode 335 rotating in the direction of the arrow by a driving unit (not shown).
[0070]
The plurality of fixed electrodes 336 connected to the high-frequency power supply device 33 are formed of metal cylinders or prisms, and are installed facing the peripheral surface of the roll electrode 335 with a predetermined gap d.
[0071]
The roll electrode 335 and the fixed electrode 336 each have a surface covered with a dielectric material, and the materials of the roll electrode, the fixed electrode and the dielectric material are the electrodes 331 and 332 and the dielectric material 333 described in FIG. 334, and the gap d between the roll electrode 335 and the fixed electrode 336 is set to 0.5 to 20 mm, preferably 0.5 to 1.5 mm in order to cause uniform and stable discharge.
[0072]
Then, a mixed gas of argon and oxygen is supplied into the cleaning chamber 35 by the gas supply devices 341 and 342, and a high frequency voltage is applied to the fixed electrode 336 by the high frequency power supply device 33, so that the mixed gas of the plasma generating section 339 is converted into plasma. The surface of the web-like substrate 113 wound around the roller electrode 335 is cleaned.
[0073]
The gas containing impurities after the cleaning is exhausted from the exhaust port 338.
When an apparatus for manufacturing an organic EL element is configured using the plasma cleaning device 7, for example, the same ultrasonic cleaning device as that described with reference to FIG. 3, an organic compound film layer deposition device, and a metal film layer deposition An apparatus, a film forming apparatus for forming a sealing material, a transfer path, a shutter, and a web transport unit including various transport rollers or nip rollers for transporting a web-shaped substrate can be used.
[0074]
In addition, the vapor deposition devices 4 and 5 connected to the plasma cleaning device 7 for depositing the organic compound vapor deposition film material and the metal film material described in FIG. 3 may be replaced with a film deposition device using an inkjet method or a film deposition device using a gravure method. In these cases, it is possible to continuously perform cleaning and film formation, and there is no need for a decompression device for performing film formation, which has the effect of shortening the tact time. In particular, the web as shown in FIG. When connected to a plasma cleaning apparatus for cleaning the substrate 113, a remarkable effect can be obtained.
[0075]
An apparatus for manufacturing an organic EL device provided with a film forming apparatus using an ink jet system is a device in which the vapor deposition apparatus 4 in FIG.
[0076]
FIG. 7 is a conceptual diagram of an inkjet film forming apparatus.
Since the basic manufacturing process is the same as that by the vapor deposition described in FIG. 3, different portions will be described with reference to FIG.
[0077]
In this case, after cleaning the substrate by atmospheric pressure plasma in the cleaning chamber 35, an ink jet printing apparatus 42 which is a commonly used organic compound film layer patterning apparatus is provided in the film forming chamber 36, and an ink head 421 is provided. Are provided so that ink can be ejected onto the transparent electrode surface, and a light emitting material that emits a predetermined color is applied by patterning using an ink jet printing apparatus to form a light emitting layer.
[0078]
In the case of full color, for example, a cyanopolyphenylene vinylene precursor can be used for a red color developing material, and a polyphenylene vinylene precursor can be used for a green light emitting material. Then, an aluminum quinolinol complex is vacuum-deposited in a deposition layer (not shown) to form a charge-transport-type blue light-emitting layer.
[0079]
Next, after depositing an electrode (cathode) in the film forming chamber 37, the substrate on which the electrode has been deposited is sealed with a sealing device.
[0080]
Although the shape of the electrodes 331 and 332 shown in FIGS. 4 and 5 has been described as a flat plate shape, the electrode of the present invention is not limited to a flat plate shape. For example, even if a plurality of cylinders are arranged, A plurality of cylinders having a polygonal cross section may be arranged. The direction in which the electrodes are arranged may be parallel to or perpendicular to the transport direction of the substrate 11.
[0081]
Referring back to the entire description, in FIG. 3, the film forming chamber 36 of the vapor deposition apparatus 4 adjacent to the cleaning chamber 35 is cleaned with a decompression device (vacuum exhaust device) 72 for evacuating the film forming chamber 36. An organic compound film layer vapor deposition means 41 (hereinafter referred to as vapor deposition means 41) for vacuum-depositing a light emitting layer or the like on the transparent electrode of the substrate 101, and the transparent electrode (112 in FIG. 2) of the substrate is deposited by the vapor deposition means 41. A light emitting layer or the like (121, 122, 123 in FIG. 2) is deposited thereon.
[0082]
The substrate 102 on which the light emitting layer and the like are deposited is transported by the transporting means 9 through the transfer path 92 to the film forming chamber 37 of the vapor deposition device 5 where the pressure is reduced by the pressure reducing device 73, and the metal film layer deposition means 51 for vacuum-depositing the electrode. An electrode (cathode) (13 in FIG. 2) is deposited on the light-emitting layer and the like deposited by a deposition means (hereinafter referred to as deposition means 51).
[0083]
The vapor deposition means 41 includes a plurality of crucibles 411 containing the vapor deposition materials of the hole injection layer 121, the light emitting layer 122, and the electron injection layer 123 of FIG. 2 below the transfer position of the substrate 101. It is connected to a heating power supply (not shown) and is controlled to a temperature at which the deposition material melts and evaporates.
[0084]
The washed substrate 101 is sequentially transported by the transporting means 9 to a position facing each of the crucibles 411 described above, with the transparent electrode face down. Then, the respective vapor deposition materials of the hole injection layer 121, the light emitting layer 122, and the electron injection layer 123 of FIG. 2 are sequentially deposited on the transparent electrode by each crucible to form a film.
[0085]
Although not shown, a plurality of film forming chambers each including a set of crucibles are provided via a shutter and a transfer path, and the hole injection layer 121, the light emitting layer 122, and the electron injection layer 123 are sequentially deposited in the crucibles of the respective film formation chambers. Alternatively, the film may be formed.
[0086]
The vapor deposition means 51 includes a crucible 511 containing a vapor deposition material for a metal film layer below the transfer position of the substrate 102 on which the light emitting layer and the like are vapor-deposited. The crucible 511 is connected to a heating power supply (not shown). Is controlled to a temperature at which the metal melts and evaporates.
[0087]
Then, the substrate 102 on which the light emitting layer and the like are deposited is transported by the transporting means 9 to a position facing the crucible 511 with the transparent electrode surface facing down. Then, a metal film layer (electrode 13 (FIG. 2)) is deposited on the electron injection layer.
[0088]
The sealing device 6 includes a substrate 103 on which electrodes are deposited, a can sealing means 62 for sealing the substrate with a sealing can 61 supplied from a sealing can supply device 63, and an inert gas in the can sealing means 62. A nitrogen gas supply device (not shown) for supplying nitrogen gas, which is a gas, is provided.
[0089]
The substrate is held in a state where it is positioned on the transfer means by the substrate positioning means 901 provided on the transfer means 9, and the plasma spraying position of the plasma cleaning device 3, the plurality of deposition positions of the deposition device 4, and the deposition position of the deposition device 5 The wafers are sequentially transported to the deposition position and the sealing position of the sealing device 6, and each device performs a predetermined process.
[0090]
Here, the transporting means 9 is open at portions other than the substrate positioning means 901 so that the evaporated deposition material can be deposited on the substrate.
[0091]
The transport means 9 may be a belt or a chain, or may be a robot or the like for holding and transferring a substrate. Further, the plasma cleaning device 3, the vapor deposition device 4, the vapor deposition device 5, the sealing device 6 and each of the transfer paths 91 to 93 may be individually provided, or may be provided so as to penetrate the above-described device.
[0092]
Next, a method for manufacturing the organic EL element 10 using the manufacturing apparatus 1 of the present embodiment will be described with reference to FIG.
[0093]
In this embodiment, the organic EL element 10 is continuously manufactured by performing cleaning and film formation on the substrate 11 on which the transparent electrode is formed in the cleaning chamber 35 and the film forming chambers 36 and 37, respectively.
[0094]
That is, the operator prepares the substrate 11 on which the transparent electrode 112 is formed on the base material 111 shown in FIG. 2 in advance, and sets the substrate 11 in the organic solvent 22.
[0095]
Next, control means (hereinafter, referred to as control means) of the manufacturing apparatus 1 starts control by a starting operation of an operator, and activates the ultrasonic vibrator 23 to ultrasonically clean the substrate 11.
[0096]
Then, the control means opens the shutter 81 of the cleaning chamber 35, drives a robot hand (not shown) or the like to transfer the ultrasonically cleaned substrate 11 into the cleaning chamber 35, and mounts the substrate 11 on the substrate positioning means 901 of the transport means 9. Then, the shutter 81 is closed.
[0097]
At this time, the substrate 11 is mounted in a direction in which the transparent electrode 112 in FIG. 2 is exposed to plasma (a direction in which the transparent electrode 112 in FIG. 2 is directed upward). When the substrate 11 is transferred, the pressure in the cleaning chamber 35 is set slightly higher than the atmospheric pressure in order to prevent impurities from flowing into the cleaning chamber 35.
[0098]
After closing the shutter 81, the control means causes the gas supply devices 341 and 342 to inject argon and oxygen gas between the electrodes 331 and 332 in the cleaning chamber 35 (the plasma generation unit 311).
[0099]
In order to stably generate plasma, the flow rate of these gases is controlled at a flow rate of 90% by volume, preferably 95% by volume with respect to 100% by volume of a mixed gas (mixed gas of argon gas and oxygen gas). It is set so as to be contained by volume% or more.
[0100]
Next, the control unit operates the high-frequency power supply device 33 to apply a high-frequency voltage to the electrode 332 to turn the mixed gas passing through the plasma generation unit 311 into plasma, and to place the transparent electrode surface below the plasma generation unit 311. The plasma-converted gas is blown onto the substrate 11 conveyed on the upper side to clean the substrate surface.
[0101]
Here, the surface of the substrate 11 is cleaned by plasma, and in particular, impurities made of organic substances are efficiently decomposed and incinerated by oxygen plasma. Normally, when argon is used for plasma cleaning of the transparent electrode 112 made of the ITO film shown in FIG. 2, oxygen molecules on the surface of the transparent electrode 112 are reduced to adversely affect the organic EL element 10, but in this embodiment, oxygen gas is used. Since the mixing is performed, the reduction of the transparent electrode 112 is suppressed.
[0102]
In addition, in order to shorten the tact time of the plasma cleaning, the plasma cleaning time is controlled to be 10 seconds to 30 seconds.
[0103]
In this plasma cleaning apparatus 3, instead of cleaning in a state in which plasma is confined in a conventional vacuum chamber, plasma generated gas containing impurities after cleaning is exhausted while cleaning at near atmospheric pressure. Almost no impurity is deposited in the cleaning chamber 35.
[0104]
As described above, since the substrate is cleaned in the vicinity of the atmospheric pressure, the cleaning effect does not decrease even when the organic EL element is manufactured continuously, impurities are hardly deposited in the cleaning chamber or the electrode, and the electrode is frequently cleaned. There is no need to clean or replace or frequently clean the room.
[0105]
When the cleaning is completed, the control unit opens the shutter 82 and causes the transport unit 9 to transport the cleaned substrate 101 to the transfer path 91. Then, the shutter 82 is closed, the pressure in the transfer path 91 is reduced to a pressure slightly lower than the pressure in the film forming chamber 36 by a pressure reducing means or a pressure reducing means 72 (not shown), and the substrate 101 is turned upside down by a substrate reversing means (not shown).
[0106]
The operator puts a plurality of crucibles 411 in which the evaporation material such as the hole injection layer 121 is put in the evaporation means 41 of the film formation chamber 36 and a crucible 511 in which the evaporation material of the metal film layer is put in the evaporation means 51 of the film formation chamber 37. Install it in advance.
[0107]
The control means causes the pressure in the film forming chamber 36 to be exhausted by the pressure reducing device (vacuum exhaust device) 72 until the pressure in the film forming chamber 36 reaches a predetermined pressure. Next, the shutter 83 is opened, and the substrate 101 is transported to the film forming chamber 36 by the transport unit 9, and the shutter 83 is closed.
[0108]
This makes it possible to transfer the substrate in a stable state without gas and impurities between the cleaning chamber 35 and the film forming chamber 36 flowing into the other chamber and without significantly disturbing the pressure (atmospheric pressure) in the chamber.
[0109]
Subsequently, the control unit sequentially heats and evaporates the plurality of crucibles 411 containing the respective evaporation materials of the hole injection layer 121, the light emitting layer 122, and the electron injection layer 123 by a heating unit (not shown), and controls the transporting unit 9 to evaporate. The substrate is transported to a position facing the crucible being controlled and heated, and a hole injection layer 121, a light emitting layer 122, and an electron injection layer 123 are sequentially deposited and formed on the transparent electrode 112 of the substrate 11.
[0110]
Next, the control means controls the shutter and the transfer means to transfer the substrate 102 on which the light-emitting layer or the like is deposited to the deposition position of the film formation chamber 37 and heat the crucible 511 of the film formation chamber 37 to form the electrode shown in FIG. (Cathode) 13 is formed into a film.
[0111]
Next, in the same manner, the control means transfers the substrate 103 on which the electrodes are deposited by the transfer means 9 from the film forming chamber 37 to the sealing device 6 via the transfer path 93.
[0112]
Then, the control means causes the sealing can supply device 63 to supply the sealing can 61 to the can sealing means 62, and the nitrogen sealing gas supplied by a nitrogen gas supply device (not shown) is filled to approximately atmospheric pressure. In the means 62, the substrate 103 is sealed with the sealing can 61.
[0113]
Thereby, the substrate 103 on which the metal film layer is formed is sealed in the nitrogen gas.
The control unit discharges the substrate 104 sealed by the sealing can 61 through the shutter 88 by the transfer unit 9 and collects the substrate 104 as an organic EL element.
[0114]
【The invention's effect】
By introducing plasma cleaning under reduced pressure in an organic EL device manufacturing apparatus, the pressure reduction device (vacuum exhaust device) and vacuum chamber in the conventional cleaning process are not required, and cost reduction is achieved. It is possible to prevent contamination of the substrate and a decrease in the cleaning effect due to the deposition of impurities, and to further reduce the trouble of removing impurities from the electrodes and the inner wall. In addition, by configuring a continuous production process, the tact time can be shortened, and a high-productivity, high-quality organic EL element manufacturing apparatus can be provided.
[Brief description of the drawings]
FIG. 1 is a conceptual diagram of a conventional organic EL element manufacturing apparatus.
FIG. 2 is a schematic diagram of a layer configuration of an organic EL element.
FIG. 3 is a conceptual diagram of an apparatus for manufacturing an organic EL element according to an embodiment of the present invention.
FIG. 4 is a conceptual diagram showing a plasma cleaning unit.
FIG. 5 is a conceptual diagram of a cleaning apparatus for cleaning by passing a substrate between electrodes.
FIG. 6 is a conceptual diagram of a cleaning apparatus for cleaning a web-shaped substrate.
FIG. 7 is a conceptual diagram of an inkjet film forming apparatus.
[Explanation of symbols]
1 Manufacturing equipment
2 Ultrasonic cleaning equipment
3,7 Plasma cleaning device
4,5 evaporation equipment
6 Sealing device
9 Transport means
11 Substrate
31 Plasma cleaning means
33 High frequency power supply
81-89 shutter
91-93 Transfer route
331, 332 electrode
333, 334 Dielectric
341, 342 gas supply device

Claims (6)

Manufacture of an organic EL element comprising: a device for cleaning a substrate having an ITO film formed on a substrate made of glass or a resin material; and a film forming device for forming at least an organic compound film layer on the ITO film. In the device,
The apparatus for manufacturing an organic EL element, wherein the cleaning apparatus is a plasma cleaning apparatus for cleaning the substrate with plasma generated near atmospheric pressure. The cleaning apparatus has a pair of dielectric coated electrodes disposed at a predetermined distance from each other, and a gas mixture of argon and oxygen, or a gas of any of them, is provided between the electrodes. 2. The apparatus for manufacturing an organic EL device according to claim 1, wherein a high-frequency voltage having a frequency of about 150 MHz is applied to convert the gas into plasma, and the substrate is cleaned with the plasma-converted gas. The electrode is made of a metal such as aluminum, stainless steel, or iron, and the dielectric is a ceramic-coated dielectric such as alumina having a thickness of 0.2 to 3 mm, and the gap between the electrodes is 0.5 to 20 mm. 3. The apparatus for manufacturing an organic EL device according to claim 2, wherein: In an organic EL element manufacturing apparatus including a substrate cleaning apparatus and a film forming apparatus,
A plasma cleaning apparatus having plasma cleaning means for cleaning a substrate having an ITO film formed on a substrate made of glass or a resin material using plasma generated at about atmospheric pressure, and vacuum deposition on the ITO film of the cleaned substrate An organic compound film layer deposition apparatus for forming an organic compound film layer by a method, a metal film layer deposition apparatus for forming a metal film layer by a vacuum deposition method on the formed organic compound film layer, and a metal film layer. And a sealing device for sealing the filmed substrate in an inert gas atmosphere in this order. The cleaning means includes a pair of dielectric-coated electrodes disposed at a predetermined distance from each other, and a gas mixture of argon and oxygen, or a gas of any of them, is provided between the electrodes, Applying a high-frequency voltage of a frequency of ~ 150 MHz to convert the gas into a plasma, and cleaning the substrate on which an ITO film is formed on a substrate made of glass or a resin material by the plasma-converted gas, The electrode is a metal such as aluminum, stainless steel or iron, the dielectric is a ceramic-coated dielectric such as alumina having a thickness of 0.2 to 3 mm, and the gap between the electrodes is 0.5 to 20 mm. An apparatus for manufacturing an organic EL device according to claim 4, wherein: In an organic EL element manufacturing apparatus including a substrate cleaning apparatus and a film forming apparatus,
A plasma cleaning apparatus having plasma cleaning means for cleaning a substrate having an ITO film formed on a substrate made of glass or a resin material using plasma generated at about atmospheric pressure, and an inkjet method on the ITO film of the cleaned substrate An organic compound film layer patterning apparatus for forming an organic compound film layer by using the method, a metal film layer deposition apparatus for forming a metal film layer on the formed organic compound film layer by a vacuum evaporation method, and a metal film layer And a sealing device for sealing the substrate in an inert gas atmosphere in this order.

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